Reaction chamber and wafer etching device

Abstract

The present disclosure provides a reaction chamber and a wafer etching device. The reaction chamber includes a cavity, a wafer transfer port, a first liner and a first heater. A wafer carrier is arranged inside the cavity. The wafer transfer port is connected to the interior of the cavity. The first liner is arranged between the inner wall of the cavity and the outer wall of the wafer carrier. The first heater is arranged in the inner wall of the cavity and corresponds to the position of the first liner, and the first heater is used to heat the first liner. According to the scheme of the present disclosure, the first liner is heated by the first heater, so that the temperature of the first liner is increased when the wafer etching process is performed, which is beneficial to the plasma ignition in the reaction chamber, and at the same time reduces the excessive deposition of by-products in the reaction process on the first liner.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a reaction chamber and a wafer etching device. Background Art

[0002] In the process of wafer etching, the reaction chamber of the wafer etching device is mainly used to accommodate the wafer and make the wafer undergo the etching process in the reaction chamber. Whether the structural design of the reaction chamber is reasonable will directly affect the etching effect of the wafer. Summary of the invention

[0003] The present disclosure provides a reaction chamber and a wafer etching device.

[0004] According to one aspect of the present disclosure, a reaction chamber is provided, which is applied to a wafer etching device, and includes a chamber body, a wafer transfer port, a first liner, and a first heater;

[0005] A cavity body, wherein a wafer stage is arranged inside;

[0006] A wafer transfer port, connected to the interior of the cavity, for transferring the wafer to the wafer stage;

[0007] A first lining is disposed between the inner wall of the cavity and the outer wall of the wafer stage;

[0008] The first heater is arranged in the inner wall of the cavity and corresponds to the position of the first lining. The first heater is used to heat the first lining.

[0009] In one embodiment, there are multiple first heaters, the multiple first heaters are arranged in a vertical direction, and the multiple first heaters are all electrically connected to a first controller, and the first controller is used to control the temperatures of the multiple first heaters to heat different areas of the first lining respectively.

[0010] In one embodiment, the reaction chamber further comprises:

[0011] The temperature sensor is connected to the first liner and the first heater, and is used to detect the temperature of the first liner and feed back the temperature detection result to the first heater.

[0012] In one embodiment, the first liner is slidably connected to the inner wall of the cavity and is slidably mounted on the outer wall of the wafer carrier. The first liner is used to change the working position by sliding to control the on / off state of the wafer transmission port.

[0013] In one embodiment, the first heater is a radiant heater.

[0014] In one embodiment, the chamber comprises a top plate and a bottom plate arranged opposite to each other in a vertical direction, the top plate is provided with an air inlet, the bottom plate is provided with an air extraction port, and the wafer stage is located between the air inlet and the air extraction port; a first air extraction area is formed between the first liner and the top plate, and a second air extraction area is formed between the first liner and the bottom plate; and

[0015] The first liner is provided with a vent hole, and the vent hole connects the first air pumping area with the second air pumping area.

[0016] In one embodiment, the first liner includes a first working position and a second working position; when the first liner slides to the first working position, the film transfer port is connected to the first air extraction area; when the first liner slides to the second working position, the film transfer port is blocked from the first air extraction area; and

[0017] The heating area of ​​the first heater includes at least the area where the first liner slides between the first working position and the second working position.

[0018] In one embodiment, the reaction chamber further comprises:

[0019] A second liner is connected to the inner wall of the cavity and is disposed close to the top plate. The second liner, the first liner and the wafer stage are coaxially disposed, and the inner diameters of the second liner and the first liner are equal;

[0020] Among them, when the first liner slides to the first working position, the film transmission port is connected to the first air extraction area; when the first liner slides to the second working position, the first liner is joined with the second liner to form a closed first air extraction area, and the film transmission port is blocked from the closed first air extraction area.

[0021] In one embodiment, the reaction chamber further comprises:

[0022] The second heater is arranged in the inner wall of the cavity and corresponds to the position of the second lining. The second heater is electrically connected to the second controller, and the second controller is used to control the temperature at which the second heater heats the second lining.

[0023] According to another aspect of the present disclosure, a wafer etching device is provided, comprising: a reaction chamber in any one of the above embodiments.

[0024] According to the scheme disclosed in the present invention, the first liner is heated by the first heater, thereby increasing the temperature of the first liner during the wafer etching process, which is beneficial to plasma ignition in the reaction chamber and reduces excessive deposition of byproducts in the reaction process on the first liner.

[0025] It should be understood that the contents described in the summary of the invention are not intended to limit the key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein:

[0027] Figure 1 is a schematic structural diagram of a reaction chamber according to an embodiment of the present disclosure;

[0028] Figure 2 is a schematic diagram of the internal three-dimensional structure of the reaction chamber of an embodiment of the present disclosure;

[0029] Figure 3 is a schematic diagram of a top view of a wafer stage of a reaction chamber according to an embodiment of the present disclosure;

[0030] Figure 4 is a schematic diagram of a top view of a wafer stage of a reaction chamber according to an embodiment of the present disclosure;

[0031] Figure 5 is a schematic structural diagram of a reaction chamber according to an embodiment of the present disclosure;

[0032] Figure 6 It is a schematic diagram of the structure of the reaction chamber of an embodiment of the present disclosure. DETAILED DESCRIPTION

[0033] The following is a description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be recognized by those of ordinary skill in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0034] like Figure 1 , Figure 5 , Figure 6 As shown, an embodiment of the present disclosure provides a reaction chamber 100 applied to a wafer etching device, including a chamber body 1, a wafer transfer port 10, a first liner 11 and a first heater 112.

[0035] The cavity 1 is provided with a wafer stage 4 inside. The wafer stage 4 is used to carry the wafer.

[0036] The wafer transfer port 10 is communicated with the interior of the cavity 1 and is used for transferring the wafer to the wafer stage 4 .

[0037] The first liner 11 is disposed between the inner wall of the chamber 1 and the outer wall of the wafer stage 4. Byproducts generated during the wafer etching process will adhere to the first liner 11, which can prevent the byproducts from directly contacting the chamber 1 and improve the service life of the chamber 1.

[0038] The first heater 112 is disposed in the inner wall of the cavity 1 and corresponds to the position of the first liner 11. The first heater 112 is used to heat the first liner 11. During the wafer etching process, the first heater 112 heats the first liner 11, so that the temperature of the first liner 11 increases, which is conducive to plasma ignition. After completing the wafer etching process of a wafer, the temperature of the first liner 11 will decrease in the absence of plasma. By controlling the first heater 112, the first liner 11 can be heated during the period without plasma. During the second wafer etching process, the first liner 11 is still at a temperature that is conducive to the wafer etching process, so that each wafer is in a stable process environment, and the inter-wafer uniformity of the process results is improved.

[0039] According to the embodiments of the present disclosure, it should be noted that:

[0040] The horizontal direction in each embodiment of the present disclosure is defined as Figure 1 The vertical direction is Figure 1 The reaction chamber 100 is in a direction from top to bottom.

[0041] The shape and material of the cavity 1 can be selected and adjusted as needed and are not specifically limited here.

[0042] The shape, caliber and setting position of the wafer transfer port 10 can be selected and adjusted as needed, and are not specifically limited here, as long as they can satisfy the requirement of placing the wafer on the wafer stage 4. Before the etching process, the wafer can be transferred by a robot, passed through the wafer transfer port 10 on the cavity 1, transferred into the cavity 1 and placed on the wafer stage 4, and then the robot exits the cavity 1 and performs the etching process. After the etching process is completed, the robot enters the cavity 1 again through the wafer transfer port 10 on the cavity 1 to take away the wafer.

[0043] The setting position of the wafer stage 4 can correspond to the position of the wafer transfer port 10, so that the wafer fed from the wafer transfer port 10 can be quickly, accurately and conveniently placed on the wafer stage 4. For example, the end surface of the wafer stage 4 on which the wafer is placed can be arranged substantially horizontally with the wafer transfer port 10. For another example, the end surface of the wafer stage 4 on which the wafer is placed is located below the wafer transfer port 10. The shape, size and material of the wafer stage 4 can be selected and adjusted as needed, and are not specifically limited here.

[0044] The first lining 11 may be an annular structure, wherein the outer ring is formed with a first side wall slidably connected to the inner wall of the cavity 1, the inner ring is formed with a second side wall slidably connected to the outer wall of the wafer stage 4, and an annular connecting plate is connected between the first side wall and the second side wall. The shape of the first side wall is adapted to the shape of the inner wall of the cavity 1, and the shape of the second side wall is adapted to the shape of the outer wall of the wafer stage 4. The height of the first side wall and the second side wall may be selected and adjusted as needed, and are not specifically limited here. The height of the first side wall may be the same as or different from the height of the second side wall, and may be selected and adjusted as needed, and are not specifically limited here. The material of the first lining 11 may be selected and adjusted as needed, and are not specifically limited here.

[0045] The first heater 112 is disposed in the inner wall of the cavity 1, which can be understood as the first heater 112 being embedded in the inner wall of the cavity 1 or a groove being disposed in the inner wall of the cavity 1, and the first heater 112 being disposed in the groove. The inner diameter of the first heater 112 should be as equal as possible to the inner diameter of the cavity 1, so that a uniform airflow field can be formed inside the cavity 1 during the wafer etching process.

[0046] The position of the first heater 112 corresponds to the first lining 11 . It can be understood that the heating area of ​​the first heater 112 should at least cover the active area of ​​the first lining 11 to ensure that the first heater 112 can heat various areas of the first lining 11 .

[0047] The heating method of the first heater 112 is not specifically limited here, as long as it can transfer heat to the first liner 11. For example, the first heater 112 can heat the first liner 11 by radiation heating or by contact heat conduction.

[0048] According to the embodiment of the present disclosure, the first liner 11 is arranged in the chamber 1, so that the byproducts generated during the wafer etching process can be attached to the first liner 11, preventing the byproducts from attaching to the chamber 1 and causing particle contamination thereto, thereby increasing the service life of the chamber 1. The first heater 112 heats the first liner 11, thereby increasing the temperature of the first liner 11 during the wafer etching process, facilitating the plasma ignition in the chamber 1, and reducing the excessive deposition of byproducts during the reaction on the first liner 11.

[0049] In one example, when the reaction chamber 100 is in operation, the internal process pressure of the chamber 1 can be maintained in the range of 1 to 100 mTorr (mTorr), the internal temperature of the chamber 1 can be maintained in the range of 0 to 100 degrees Celsius, and the gas flow rate can be maintained in the range of 50 to 2000 sccm (standard cubic centimeter per minute, volume flow unit).

[0050] In one embodiment, there are multiple first heaters 112, and the multiple first heaters 112 are arranged in the vertical direction. The multiple first heaters 112 are electrically connected to the first controller. The first controller is used to control the temperatures at which the multiple first heaters 112 heat different areas of the first liner 11. The multiple first heaters 112 are arranged in the vertical direction to heat different areas of the first liner 11. The temperatures of the multiple first heaters 112 controlled by the first controller can be different.

[0051] According to the embodiments of the present disclosure, it should be noted that:

[0052] The multiple first heaters 112 can be arranged at any position of the cavity 1 relative to the first lining 11, so that the multiple first heaters 112 can heat different areas of the first lining 11 respectively. For example, the multiple first heaters 112 are arranged in a ring outside the first lining 11 in the vertical direction, so that the multiple first heaters 112 can cover the entire outer wall area of ​​the first lining 11 after being combined. For another example, the multiple first heaters 112 are staggered in the vertical direction, and the multiple first heaters 112 are respectively distributed in multiple outer wall areas of the first lining 11. Through the heat conduction of the multiple first heaters 112, the entire outer wall area of ​​the first lining 11 can be heated.

[0053] The temperature control of each first heater by the first controller can be selected and adjusted as needed, and is not specifically limited here. For example, during the wafer etching process, the temperature of the first liner 11 is required to be between 100 degrees Celsius and 150 degrees Celsius, then the first controller can be used to control a portion of the first heaters 112 to heat the temperature of the upper area of ​​the first liner 11 to between 100 degrees Celsius and 120 degrees Celsius, and control another portion of the first heaters 112 to heat the temperature of the lower area of ​​the first liner 11 to between 120 degrees Celsius and 150 degrees Celsius.

[0054] According to the embodiment of the present disclosure, the first controller can adjust the heating temperature of different areas of the first liner 11 by controlling the temperature of the plurality of first heaters 112, thereby improving the controllability of the temperature of the first liner 11 in the wafer etching process. At the same time, according to the byproduct deposition conditions in different areas of the inner side wall of the first liner 11, one or more first heaters 112 are controlled to precisely heat the areas with severe byproduct deposition in a targeted manner, thereby improving the byproduct deposition conditions of the inner side wall of the first liner 11.

[0055] In one embodiment, the reaction chamber 100 further includes a temperature sensor. The temperature sensor is connected to the first liner 11 and the first heater 112 and is used to detect the temperature of the first liner 11 and feed back the temperature detection result to the first heater 112.

[0056] When it is detected that the temperature of the first liner 11 does not meet the wafer etching process, the heating temperature of the first heater 112 is increased to further adjust the temperature of the first liner 11 .

[0057] According to the embodiments of the present disclosure, it should be noted that:

[0058] The temperature sensor can be any detection device capable of measuring temperature in the prior art, and can be selected and adjusted as required. No specific limitation is made here, as long as the temperature of the first lining 11 can be detected.

[0059] According to the embodiments of the present disclosure, by using the temperature detection results of the set temperature sensor, the temperature of the first lining 11 can be accurately adjusted by using the first heater 112, further improving the controllability of the temperature of the first lining 11, which is beneficial to the plasma ignition in the cavity 1, and at the same time reduces the excessive deposition of by-products in the reaction process on the first lining 11.

[0060] In one example, the temperature sensor may be an infrared temperature sensor.

[0061] In one example, when the temperature sensor detects that the temperature of the first liner 11 does not meet the temperature range requirement between 100 degrees Celsius and 150 degrees Celsius, the heating temperature of the first heater 112 is adjusted.

[0062] In one example, the temperature sensor is connected to the first liner 11 and the first controller, and is used to detect the temperature of the first liner 11 and feed back the temperature detection result to the first controller. When it is detected that the temperature of the first liner 11 does not meet the temperature required by the wafer etching process, the first controller adjusts the heating temperature of the first heater 112, thereby adjusting the temperature of the first liner 11.

[0063] In one example, the number of temperature sensors of the reaction chamber 100 is two, and the first temperature sensor is connected to the first liner 11 and the first heater 112, and is used to detect the temperature of the first liner 11 and feed back the temperature detection result to the first heater 112. The second temperature sensor is connected to the cavity 1 and the first heater 112, and is used to detect the temperature of the cavity 1 and feed back the temperature detection result to the first heater 112.

[0064] In one example, when the reaction chamber 100 is in operation, the temperature inside the cavity 1 can be maintained between 60 degrees Celsius and 100 degrees Celsius, and the temperature of the first lining 11 can be maintained between 100 degrees Celsius and 150 degrees Celsius. The high temperature of the first lining 11 can avoid the deposition of by-products.

[0065] In one embodiment, the first liner 11 is slidably connected to the inner wall of the cavity 1, and is slidably mounted on the outer wall of the wafer stage 4. The first liner 11 is used to change the working position by sliding to control the on-off state of the wafer transfer port 10. And the byproducts (such as particulate matter) generated during the wafer etching process can adhere to the first liner 11 to prevent the byproducts from directly contacting the cavity 1, thereby increasing the service life of the cavity 1. The first liner 11 is coaxially arranged with the wafer stage 4. When the first liner 11 slides relative to the inner wall of the cavity 1 to a position that blocks the wafer transfer port 10 and closes it, the wafer stage 4, the first liner 11 and the interior of the cavity 1 can together form a circularly symmetrical area.

[0066] According to the embodiments of the present disclosure, it should be noted that:

[0067] The on and off state of the film transmitting port 10 can be understood as that by adjusting the position of the first lining 11 relative to the film transmitting port 10, the film transmitting port 10 can be in an open state connected to the internal space of the cavity 1, and the film transmitting port 10 can be in a closed state blocked from the internal space of the cavity 1.

[0068] The sliding mechanism that drives the first lining 11 to slide relative to the inner wall of the cavity 1 and the outer wall of the wafer stage 4 can be selected and adjusted as needed, and is not specifically limited here. For example, the sliding mechanism is a gear rack, a ball screw, a crank connecting rod, a gas rod, a hydraulic rod, etc. The first lining 11 can be directly slidably connected to the inner wall of the cavity 1, or indirectly slidably connected to the inner wall of the cavity 1 through a connecting piece. The first lining 11 can be directly slidably connected to the outer wall of the wafer stage 4, or indirectly slidably connected to the outer wall of the wafer stage 4 through a connecting piece.

[0069] The first lining 11 is coaxially arranged with the wafer stage 4, which can be understood as the central axis of the first lining 11 and the central axis of the wafer stage 4 being on the same vertical line (eg Figure 1 , Figure 6 ).

[0070] According to the embodiment of the present disclosure, since the first liner 11 can block the wafer transfer port 10 to close it, and is coaxially arranged with the wafer stage 4, the wafer stage 4, the first liner 11 and the interior of the cavity 1 can together form a circumferentially symmetrical area. When performing the etching process, the wafer can be placed in a circumferentially symmetrical process environment, so that the process gas introduced into the cavity 1 can form a uniform circumferentially symmetrical airflow field around the wafer, and at the same time, the electrical properties of the first liner 11 can also achieve circumferential symmetry, thereby maximally ensuring the circumferential symmetry uniformity of the wafer process results.

[0071] In one embodiment, the first heater 112 may be a radiation heater, and a radiation heating end of the radiation heater is disposed toward the first lining 11 .

[0072] According to the embodiments of the present disclosure, it should be noted that:

[0073] The model of the radiation heater can be selected and adjusted as needed, and is not specifically limited here. For example, a radiation heater with a suitable wavelength is selected according to the material of the first lining 11. The specific structure of the radiation heater can adopt the structure of any radiation heater in the prior art, and is not specifically limited here. For example, the radiation heater can adopt a heater in the form of an embedded heating wire.

[0074] According to the embodiments of the present disclosure, a radiation heater can be used to quickly heat the first lining 11 by heat conduction, thereby improving the heating efficiency of the first lining 11 .

[0075] In one example, the radiation heater may also be an infrared lamp heater.

[0076] In one example, the reaction chamber 100 is further provided with a vacuum adapter flange, and the power supply line is connected to the first heater 112 through the vacuum adapter flange, so as to supply power to the first heater 112 .

[0077] In one example, a heat insulating layer is further provided between the first heater 112 and the inner wall of the cavity 1 to prevent the temperature of the first heater 112 from affecting the cavity 1 and to increase the service life of the cavity 1 .

[0078] In one embodiment, the chamber 1 includes a top plate 2 and a bottom plate 3 arranged opposite to each other in the vertical direction. The top plate 2 is provided with an air inlet 201. The bottom plate 3 is provided with an exhaust port 301. The wafer carrier 4 is located between the air inlet 201 and the exhaust port 301. The process gas entering the chamber 1 through the air inlet 201 is etched with the wafer on the wafer carrier 4. A first exhaust area 52 is formed between the first liner 11 and the top plate 2. A second exhaust area 51 is formed between the first liner 11 and the bottom plate 3. And

[0079] The first liner 11 is provided with a vent hole 111, which connects the first air pumping area 52 with the second air pumping area 51, so that the pressure of the first air pumping area 52 and the pressure of the second air pumping area 51 are kept consistent.

[0080] According to the embodiments of the present disclosure, it should be noted that:

[0081] The air inlet 201 can be connected to the air inlet pipeline, and the process gas transported by the air inlet pipeline is transported to the interior of the chamber 1 through the air inlet 201. The shape and number of the air inlet 201 can be selected and adjusted as needed, and are not specifically limited here. The position of the air inlet 201 on the top plate 2 can be selected and adjusted as needed, for example, the air inlet 201 is set at a position relative to the wafer of the top plate 2, or the air inlet 201 is set at any position of the top plate 2.

[0082] The gas extraction port 301 is used to extract the process gas inside the chamber 1. The shape and diameter of the gas extraction port 301 can be selected and adjusted as needed, and are not specifically limited here.

[0083] The spatial volumes of the first air extraction area 52 and the second air extraction area 51 will change with the change of the working position of the first liner 11. For example, when the first liner 11 slides toward the top plate 2, the distance between the first liner 11 and the top plate 2 will decrease, and the distance between the first liner 11 and the bottom plate 3 will increase, so the spatial volume of the first air extraction area 52 will decrease, and the spatial volume of the second air extraction area 51 will increase. When the first liner 11 moves toward the bottom plate 3, the distance between the first liner 11 and the top plate 2 will increase, and the distance between the first liner 11 and the bottom plate 3 will decrease, so the spatial volume of the first air extraction area 52 will increase, and the spatial volume of the second air extraction area 51 will decrease.

[0084] The number, shape and size of the vent holes 111 can be selected and adjusted as needed, and are not specifically limited here. The location of the vent holes 111 can be selected and adjusted as needed, for example, the vent holes 111 are evenly distributed in the area of ​​the first lining 11 between the inner wall of the cavity 1 and the outer wall of the wafer stage 4.

[0085] According to the embodiment of the present disclosure, the vent holes 111 provided in the first liner 11 make the internal pressure of the cavity 1 consistent, and a uniform airflow field can be formed in the first exhaust area 52, thereby improving the uniformity of the process results.

[0086] In one example, the heating temperature of the vent hole 111 by the first heater 112 is higher than the heating temperature of the other positions of the first liner 11 by the first heater 112, so as to prevent the byproducts generated during the wafer etching process from being deposited at the vent hole 111 and causing the vent hole 111 to be blocked.

[0087] In one example, the reaction chamber 100 further includes a RF source 101 and a dielectric window 102. The RF source 101 is disposed relative to the dielectric window 102 of the top plate 2. The RF energy generated by the RF source 101 is transmitted into the interior of the cavity 1 through the dielectric window 102 and excites the introduced process gas to generate plasma.

[0088] In one embodiment, the first liner 11 includes a first working position and a second working position. When the first liner 11 slides to the first working position, the film transfer port 10 is connected to the first air extraction area 52. When the first liner 11 slides to the second working position, the film transfer port 10 is blocked from the first air extraction area 52.

[0089] The heating area of ​​the first heater 112 at least includes the area where the first liner 11 slides between the first working position and the second working position.

[0090] According to the embodiments of the present disclosure, it should be noted that:

[0091] The first working position can be understood as the first liner 11 sliding toward the bottom plate 3 to a certain low position, so that the wafer transfer port 10 is connected to the first exhaust area 52. The specific position can be selected and adjusted as needed, and is not specifically limited here. When the first liner 11 slides to the first working position, the wafer can be delivered into the cavity 1 through the wafer transfer port 10 and placed on the wafer stage 4.

[0092] The second working position can be understood as the first liner 11 sliding toward the top plate 2 to a certain high position, which prevents the film transmission port 10 from communicating with the first air extraction area 52. The specific position of the high position can be selected and adjusted as needed, and is not specifically limited here.

[0093] The heating area can be understood as the first liner 11 being located at any position relative to the reaction chamber 100, and the first heater 112 can transfer heat to the first liner 11 to heat the first liner 11. During the wafer etching process, the first liner 11 slides to the second working position, and the first heater 112 heats the first liner 11 to facilitate plasma ignition. When the wafer etching process is completed, the first liner 11 slides to the first working position, and the first heater 112 still heats the first liner 11. During the next wafer etching process, the first liner 11 is still at a temperature that is conducive to the wafer etching process, thereby improving the inter-wafer uniformity of the process results.

[0094] According to the embodiment of the present disclosure, the heating area of ​​the first heater 112 covers the sliding area of ​​the first lining 11 , and can continuously and fully heat the first lining 11 , so that a stable process environment is formed inside the cavity 1 .

[0095] In one embodiment, the reaction chamber 100 further includes a second liner 12. The second liner 12 is connected to the inner wall of the chamber 1 and is disposed close to the top plate 2. The second liner 12 is provided with an opening, which is communicated with the air inlet 201. The second liner 12, the first liner 11 and the wafer stage 4 are coaxially disposed, and the inner diameters of the second liner 12 and the first liner 11 are equal.

[0096] When the first liner 11 slides to the first working position, the film transfer port 10 is connected to the first air extraction area 52. When the first liner 11 slides to the second working position, the first liner 11 is engaged with the second liner 12 to form a closed first air extraction area 52, and the film transfer port 10 is blocked from the closed first air extraction area 52. At this time, the wafer stage 4, the first liner 11, the second liner 12 and the interior of the cavity 1 can together form a circularly symmetrical area.

[0097] According to the embodiments of the present disclosure, it should be noted that:

[0098] The first lining 11 and the second lining 12 are coaxially arranged, which can be understood as the central axis of the first lining 11 coincides with the central axis of the second lining 12 .

[0099] The shape of the second liner 12 is adapted to the shape of the inner wall of the cavity 1. The second liner 12 can be a non-uniform annular structure, and the first side wall of the first liner 11 can be a non-uniform annular side wall, as long as it is satisfied that when the first liner 11 slides to the second working position, after the first liner 11 and the second liner 12 are engaged, the inner side walls of the two and the cavity 1 form a closed and circumferentially symmetrical first exhaust area 52.

[0100] According to the embodiments of the present disclosure, the second liner 12 can allow byproducts generated during the wafer etching process to adhere thereto, which can further prevent the byproducts from adhering to the cavity 1 and causing particle contamination thereto, thereby increasing the service life of the cavity 1. At the same time, the second liner 12 is coaxial with the first liner 11 and is set with the same inner diameter. Therefore, the wafer stage 4, the first liner 11, the second liner 12 and the interior of the cavity 1 can together form a circularly symmetrical area. When performing the etching process, the wafer can be placed in a circularly symmetrical process environment, so that the process gas introduced into the cavity 1 can form a uniform circularly symmetrical airflow field around the wafer, and at the same time, the electrical properties of the first liner 11 can also achieve circular symmetry, thereby maximizing the circular symmetry uniformity of the wafer process results.

[0101] In one example, during the wafer etching process, byproducts such as particles are generated and attached to the first liner 11 and the second liner 12. In order to prevent the byproducts from falling off the first liner 11 and the second liner 12 and causing particle contamination to the wafer, it is necessary to regularly clean or replace the first liner 11 and the second liner 12. Therefore, the first liner 11 and the second liner 12 are detachably arranged in the chamber 1 to facilitate disassembly, cleaning and replacement.

[0102] In one example, the inner side wall of the first side wall of the first liner 11 is a ring-shaped structure extending in the vertical direction, and the inner side wall of the second liner 12 is a ring-shaped structure extending in the vertical direction, so as to ensure that after the first liner 11 and the second liner 12 are joined, a circumferentially symmetrical space structure is formed inside the two.

[0103] In one example, the second liner 12 is connected to the inner wall of the chamber 1 through a flange. The flange is connected to a heating device, which is used to heat the flange so that the flange conducts the absorbed heat to the second liner 12 and the first liner 11. At the same time, combined with the auxiliary heating of the first liner 11 by the first heater 112, it can be more conducive to the plasma ignition in the chamber 1, while reducing the excessive deposition of byproducts in the reaction process on the first liner 11.

[0104] In one embodiment, the reaction chamber 100 further includes a second heater 121. The second heater 121 is disposed in the inner wall of the chamber 1 and corresponds to the position of the second liner 12. The second heater 121 is electrically connected to a second controller, and the second controller is used to control the temperature at which the second heater 121 heats the second liner 12.

[0105] During the wafer etching process, the second heater 121 heats the second liner 12, so that the temperature of the second liner 12 increases, which is conducive to plasma ignition. After completing the wafer etching process of one wafer, the temperature of the second liner 12 will decrease in the absence of plasma. The second controller controls the second heater 121 to heat the second liner 12 during the period without plasma. During the second wafer etching process, the second liner 12 is still at a temperature that is conducive to the wafer etching process, so that each wafer is in a stable process environment, and the uniformity of the process results between wafers is improved.

[0106] According to the embodiments of the present disclosure, it should be noted that:

[0107] The second heater 121 is disposed in the inner wall of the cavity 1, which can be understood as the second heater 121 being embedded in the inner wall of the cavity 1 or a groove being disposed in the inner wall of the cavity 1, and the second heater 121 being disposed in the groove. The inner diameter of the second heater 121 should be as equal as possible to the inner diameter of the cavity 1, so that a uniform airflow field can be formed inside the cavity 1 during the wafer etching process.

[0108] The position of the second heater 121 corresponds to the second lining 12 . It can be understood that the heating area of ​​the second heater 121 should at least cover the second lining 12 to ensure that the second heater 121 can heat various areas of the second lining 12 .

[0109] The heating method of the second heater 121 is not specifically limited here, as long as it can transfer heat to the second liner 12. For example, the second heater 121 can heat the second liner 12 by radiation heating or by contact heat conduction.

[0110] The second heater 121 can be the same type of heater as the first heater 112, or a different type of heater, which can be selected and adjusted as needed, and is not specifically limited here. For example, the second heater 121 is a contact heat conduction heater, and the first heater 112 is a radiation heater.

[0111] The second controller and the first controller can be the same controller, and control the second heater 121 and the first heater 112 at the same time. The second controller and the first controller can also be two controllers, and control the second heater 121 and the first heater 112 respectively. The specific selection and adjustment can be made according to the needs, and no specific limitation is made here.

[0112] According to the embodiment of the present disclosure, the temperature of the second liner 12 is heated by the second heater 121, which is beneficial to plasma ignition. A stable process environment is formed inside the chamber 1, and the uniformity of the process results is improved. At the same time, through the setting of the first controller, the controllability of the temperature of the second liner 12 in the wafer etching process can be improved.

[0113] In one embodiment, the reaction chamber 100 further includes: a first supporting portion 6 and a first lifting mechanism 93 .

[0114] The first supporting portion 6 is disposed between the cavity 1 and the wafer stage 4 , and is located outside the first lining 11 .

[0115] The first lifting mechanism 93 is disposed in the first supporting portion 6. The lifting portion 95 of the first lifting mechanism 93 is connected to the first inner liner 11 and is used to drive the first inner liner 11 to slide.

[0116] According to the embodiments of the present disclosure, it should be noted that:

[0117] The first support part 6 is used to connect the wafer stage 4 with the cavity 1, and plays a role in supporting the wafer stage 4. The shape and size of the first support part 6 can be selected and adjusted as needed, and are not specifically limited here.

[0118] The outside of the first lining 11 can be understood as Figure 1 , Figure 5 , Figure 6 The lower area of ​​the first lining 11 is shown. The interior of the first lining 11 can be understood as Figure 1 , Figure 5 , Figure 6 The inner area and the upper area of ​​the first liner 11 are shown. The first support part 6 is accommodated outside the first liner 11, and the wafer is accommodated inside the first liner 11.

[0119] The first lifting mechanism 93 is arranged in the first support part 6, which can be understood as the first lifting mechanism 93 is accommodated inside the first support part 6. When the lifting part 95 is in the working state, it extends from the first support part 6 and drives the first liner 11 to lift and slide inside the cavity 1. When the lifting part 95 is in the non-working state, the lifting part 95 shrinks into the first support part 6. When the etching process is performed, only the lifting part 95 of the first lifting mechanism 93 is exposed to the process environment of the cavity 1, and the rest of the parts are hidden in the first support part 6.

[0120] According to the embodiment of the present disclosure, since the first liner 11 can block the wafer transfer port 10 to close it, and is coaxially arranged with the wafer stage 4, the wafer stage 4, the first liner 11 and the interior of the cavity 1 can together form a circumferentially symmetrical area. When performing the etching process, the wafer can be placed in a circumferentially symmetrical process environment, so that the process gas introduced into the cavity 1 can form a uniform circumferentially symmetrical airflow field around the wafer, and at the same time, the electrical properties of the first liner 11 can also achieve circumferential symmetry, thereby maximizing the circumferential symmetry uniformity of the wafer process results. In addition, since the first lifting mechanism 93 is arranged in the first support portion 6, it is away from the plasma area formed around the wafer when etching and is not exposed to the interior of the cavity 1. Therefore, when the wafer is etched, the overall structure of the first lifting mechanism 93 can be prevented from contaminating the wafer, and the overall structure of the first lifting mechanism 93 can be prevented from being corroded during the etching process.

[0121] In one embodiment, the lifting portion 95 is made of aluminum alloy, and the surface of the lifting portion 95 is coated with an yttrium oxide coating.

[0122] According to the embodiment of the present disclosure, the aluminum alloy material can extend the service life of the lifting part 95 , while the yttrium oxide coating can prevent the lifting part 95 from contaminating the wafer and enhance the corrosion resistance of the lifting part 95 .

[0123] In one embodiment, the reaction chamber 100 further includes a plurality of first support portions 6 , which are evenly distributed along the circumference of the wafer stage 4 , and a first lifting mechanism 93 is disposed in each of the plurality of first support portions 6 .

[0124] According to the embodiments of the present disclosure, it should be noted that:

[0125] The number of the plurality of first support portions 6 can be selected and adjusted as required, for example, there can be 2 or 4 first support portions 6 .

[0126] According to the embodiment of the present disclosure, since a plurality of first support portions 6 are evenly arranged, the second pumping area 51 is evenly divided into a plurality of sub-areas, and when the process gas is pumped, the process gas can evenly pass through the sub-areas of the second pumping area 51. At the same time, the plurality of first support portions 6 can improve the stability of the wafer stage 4.

[0127] In one example, a plurality of first support portions 6 are evenly arranged along the circumference of the stage 4 on the first horizontal plane of the stage 4, and a plurality of first support portions 6 are evenly arranged along the circumference of the stage 4 on the second horizontal plane of the stage 4. The first horizontal plane and the second horizontal plane are spaced apart in the vertical direction. The projections of the first support portion 6 arranged on the first horizontal plane and the first support portion 6 arranged on the second horizontal plane in the vertical direction overlap with each other, or the projections of the first support portion 6 arranged on the first horizontal plane and the first support portion 6 arranged on the second horizontal plane in the vertical direction are staggered with each other. The process gas passes through a sub-area of ​​the second exhaust area 51 between two adjacent first support portions 6 on the same horizontal plane.

[0128] In one embodiment, if Figure 1 , Figure 5 , Figure 6 As shown, the first lifting mechanism 93 further includes a first tube body 94. The first tube body 94 is disposed in the first support portion 6. One end of the lifting portion 95 is slidably inserted in the first tube body 94 to reduce direct contact between the lifting portion 95 and the first support portion 6, and the other end of the lifting portion 95 is connected to the first liner 11.

[0129] According to the embodiments of the present disclosure, it should be noted that:

[0130] The sliding mechanism for the lifting part 95 to slide relative to the first tube body 94 can be selected and adjusted as needed, and is not specifically limited here. For example, the sliding mechanism is a gear rack, a ball screw, a crank connecting rod, a gas rod, a hydraulic rod, etc. The outer wall of the lifting part 95 can be directly slidably connected to the inner wall of the first tube body 94, or indirectly slidably connected to the inner wall of the first tube body 94 through a connecting piece.

[0131] The first tube body 94 is disposed in the first supporting portion 6 , which can be understood as the first tube body 94 is always located in the first supporting portion 6 and will not move along with the lifting and lowering movement of the lifting portion 95 .

[0132] According to the embodiment of the present disclosure, the first tube body 94 is disposed in the first support portion 6 , which can reduce the direct contact between the lifting portion 95 and the first support portion 6 and affect the process environment of wafer etching, and at the same time can improve the service life of the lifting portion 95 .

[0133] In one example, if Figure 1 , Figure 5 , Figure 6 As shown, the first lifting mechanism 93 also includes a driving unit 96, and the lifting portion 95 is connected to the driving unit 96. The driving unit 96 is arranged outside the cavity 1, and the driving unit 96 is used to control the lifting movement of the lifting portion 95.

[0134] According to an example of the present disclosure, the driving unit 96 is disposed outside the cavity 1 and does not occupy additional internal space of the reaction chamber 100 . Meanwhile, the driving unit 96 is disposed outside the cavity 1 to facilitate maintenance of the first lifting mechanism 93 .

[0135] In one example, the driving unit 96 adopts a clean cylinder mechanism or a hydraulic cylinder mechanism.

[0136] In one embodiment, the first tube body 94 is a vacuum bellows, and the first tube body 94 is made of corrosion-resistant stainless steel.

[0137] According to the embodiment of the present disclosure, the vacuum bellows made of corrosion-resistant stainless steel can extend the service life of the first tube body 94. At the same time, since the first tube body 94 is arranged in the first support part 6, it is far away from the plasma area formed around the wafer during etching, which can avoid contamination of the wafer.

[0138] In one embodiment, the reaction chamber 100 further includes a second supporting portion 61 disposed between the inner wall of the chamber 1 and the wafer stage 4 .

[0139] The air extraction part 7 includes a valve plate 71, a valve core 72 and a valve body 75. The valve body 75 is arranged outside the cavity 1 and connected to the air extraction port 301. The valve plate 71 is arranged inside the cavity 1 and connected to the first end of the valve core 72. The second end of the valve core 72 is inserted into the air extraction port 301 and the valve body 75 in a liftable manner. When the valve core 72 is located at the third working position, a first annulus 73 is formed between the valve plate 71 and the bottom plate 3. A second annulus 74 is formed between the valve core 72 and the air extraction port 301 and between the valve core 72 and the inner wall of the valve body 75.

[0140] The first annulus 73 , the second annulus 74 , the first air pumping area 52 and the second air pumping area 51 are coaxially arranged.

[0141] According to the embodiments of the present disclosure, it should be noted that:

[0142] The shape and size of the second support portion 61 can be selected and adjusted as needed, and are not specifically limited here. The second support portion 61 can be the same support portion as the first support portion 6, or can be a different support portion. Specifically, it can be selected and adjusted as needed, and are not specifically limited here. The setting position of the second support portion 61 relative to the first support portion 6 can be selected and adjusted as needed, and are not specifically limited here. For example, the second support portion 61 can be evenly distributed with the first support portion 6 on the same horizontal plane, or the second support portion 61 can be set at a longitudinal projection position of a different horizontal plane of the first support portion 6.

[0143] The shape and size of the valve body 75 can be selected and adjusted as needed, and are not specifically limited here, as long as the valve core 72 can be raised and lowered in the valve body 75 .

[0144] The second end of the valve core 72 is inserted into the air extraction port 301 in a liftable manner, wherein the transmission structure for driving the valve core 72 to perform liftable movement in the air extraction port 301 can be selected and adjusted as needed, and is not specifically limited here. For example, a lifting mechanism, a gear rack, a ball screw, a crank connecting rod, etc. are used as a transmission structure, and the valve core 72 is driven to perform lift movement relative to the air extraction port 301 and the valve plate 71 through its own operation.

[0145] A second annulus 74 is formed between the valve core 72 and the gas extraction port 301 and between the valve core 72 and the inner wall of the valve body 75. It can be understood that the annular gap between the valve core 72 and the gas extraction port 301 and the annular gap between the valve core 72 and the inner wall of the valve body 75 together constitute the second annulus 74. When the valve core 72 moves upward, the portion of the valve core 72 located in the valve body 75 will increase accordingly. As the valve core 72 rises, the second end of the valve core 72 will rise accordingly, so the length of the second annulus 74 formed will shorten accordingly. When the length of the second annulus 74 is short, the flow resistance through the second annulus 74 is small, the flow rate of the gas through the second annulus 74 increases, and the process pressure inside the cavity 1 can be reduced. When the valve core 72 moves downward, the portion of the valve core 72 located in the valve body 75 will decrease accordingly. As the valve core 72 descends, the second end of the valve core 72 will descend accordingly, so the length of the second annulus 74 formed will increase accordingly. When the length of the second annulus 74 is longer, the flow resistance through the second annulus 74 increases, the flow rate of the gas through the second annulus 74 decreases, and the process pressure inside the cavity 1 can be increased.

[0146] A first annulus 73 is formed between the valve plate 71 and the bottom plate 3. It can be understood that the valve core 72 moves upward to a certain position inside the cavity 1, and the annular area formed between the end surface of the valve plate 71 on one side relative to the bottom plate 3 and the bottom plate 3 is the first annulus 73. As the valve plate 71 moves upward, the valve plate 71 gradually moves away from the bottom plate 3. At this time, the volume of the first annulus 73 gradually increases, so that the gas flow rate of the process gas that can pass through the first annulus 73 becomes larger. As the valve plate 71 moves downward, the valve plate 71 gradually approaches the bottom plate 3. At this time, the volume of the first annulus 73 gradually decreases, so that the gas flow rate of the process gas that can pass through the first annulus 73 becomes smaller. As the valve plate 71 moves upward and downward, the volume of the first annulus 73 can be adjusted, thereby controlling the gas extraction efficiency of the gas extraction port 301.

[0147] The size and shape of the valve plate 71 can be selected and adjusted as needed, and are not specifically limited here. For example, the valve plate 71 can cover the air suction port 301, and then the annular area between the end surface of the valve plate 71 on one side relative to the bottom plate 3 and the bottom plate 3 is the first annular space 73. Alternatively, the shape of the valve plate 71 and the air suction port 301 are adapted, and then the annular area between the end surface of the valve plate 71 on one side relative to the bottom plate 3 and the air suction port 301 is the first annular space 73.

[0148] The first annulus 73, the second annulus 74, the first pumping area 52 and the second pumping area 51 are coaxially arranged, and it can be understood that the centers of the first annulus 73, the second annulus 74, the first pumping area 52 and the second pumping area 51 are all on the same vertical line (such as Figure 1 As shown by the dotted lines in FIG. 1 ). Since the first annulus 73, the second annulus 74, the first pumping area 52 and the second pumping area 51 are all symmetrically designed structures, a uniform airflow field is formed when the process gas is pumped out, and the process gas flows uniformly through the first pumping area 52, the second pumping area 51, the first annulus 73 and the second annulus 74 simultaneously and sequentially from different directions of 360 degrees, thereby avoiding uneven airflow.

[0149] According to the embodiment of the present disclosure, due to the second support portion 61, the stability of the wafer stage 4 can be further improved. At the same time, because the valve core 72 can be inserted in the gas extraction port 301 and the valve plate 71 in a liftable manner, the first annulus 73, the second annulus 74, the first gas extraction area 52 and the second gas extraction area 51 are coaxially arranged to form a symmetrically designed structure. Therefore, when the process gas is extracted, a uniform airflow field will be formed in the first annulus 73, the second annulus 74, the first gas extraction area 52 and the second gas extraction area 51. The process gas will flow through the first gas extraction area 52, the second gas extraction area 51, the first annulus 73 and the second annulus 74 in sequence from different directions of 360 degrees at the same time, so that the gas in the space around the wafer stage 4 can be sucked to the gas extraction port 301 through the uniform airflow field, thereby ensuring the uniformity of the wafer etching process results. By adjusting the valve core 72 in a liftable manner, the length of the second annulus 74 can be adjusted, thereby controlling the air pressure inside the chamber 1 and adjusting the gas flow resistance and gas flow rate when the process gas is extracted.

[0150] In one example, a gas extraction area 5 is formed between the inner wall of the chamber 1 and the wafer stage 4. The gas extraction area 5 includes a first gas extraction area 52 and a second gas extraction area 51.

[0151] In one example, the reaction chamber 100 further includes a flow sensor for detecting the gas flow through the gas extraction part 7. When it is detected that the gas flow through the gas extraction part 7 does not meet 50-2000 sccm (standard cubic centimeter per minute, volume flow unit), the rise height of the third working position of the valve core 72 is adjusted.

[0152] In one example, the reaction chamber 100 further includes a pressure sensor for detecting the process pressure inside the chamber 1. When it is detected that the process pressure inside the chamber 1 does not meet 1-100 mTorr (mTorr), the rising height of the third working position of the valve core 72 is adjusted.

[0153] In one example, the valve body 75 is a hollow cylinder, the valve core 72 is a cylinder, the valve core 72 is liftably inserted between the air extraction port 301 and the valve body 75 , and a second annulus 74 is formed between the valve core 72 and the air extraction port 301 and between the valve core 72 and the inner wall of the valve body 75 .

[0154] In one example, the valve core 72 is an inverted cone, the valve body 75 is adapted to the side wall of the valve core 72, the valve core 72 can be raised and lowered and inserted into the air suction port 301 and the valve body 75, and a second annulus 74 is formed between the valve core 72 and the air suction port 301 and between the valve core 72 and the inner wall of the valve body 75.

[0155] In one example, if Figure 3 As shown, four support parts are evenly distributed on the same horizontal plane between the inner wall of the cavity 1 and the outer wall of the wafer stage 4, wherein two support parts opposite to each other are the first support parts 6, and the other two support parts opposite to each other are the second support parts 61.

[0156] In one example, if Figure 2 , Figure 4 As shown, eight support parts are evenly distributed on the same horizontal plane between the inner wall of the cavity 1 and the outer wall of the wafer stage 4, of which four are first support parts 6 and the other four are second support parts 61. The first support parts 6 and the second support parts 61 are arranged alternately, that is, a second support part 61 is arranged between every two first support parts 6.

[0157] In one example, if Figure 1 The first support portion 6 is relatively arranged in the structure diagram, and the reaction chamber 100 is arranged along Figure 1 The central axis (dotted line) in FIG. 1 is rotated by a certain angle to obtain a structural schematic diagram of the second supporting portion 61 arranged relatively (as shown in FIG. Figure 2 shown).

[0158] In one embodiment, when the valve core 72 is located at the fourth working position, the valve plate 71 contacts the bottom plate 3 to close the air suction port 301 .

[0159] According to the embodiment of the present disclosure, during the wafer process reaction, by controlling the valve core 72 to move to the fourth working position, the chamber 1 can form a closed reaction space to meet the process reaction requirements of the wafer and ensure that the process gas inside the chamber 1 will not leak through the exhaust port 301.

[0160] In one embodiment, the air extraction unit 7 further includes a pump body 76 , and the pump body 76 is connected to the air extraction port 301 through a valve body 75 .

[0161] According to the embodiments of the present disclosure, it should be noted that:

[0162] The pump body 76 can adopt any pump structure in the prior art as long as it can satisfy the requirement of pumping the gas inside the cavity 1 .

[0163] According to the embodiment of the present disclosure, the extraction of process gas inside the cavity 1 can be accelerated. At the same time, before the process reaction, the internal air of the cavity 1 can be extracted by the pump body 76 to make the interior of the cavity 1 in a vacuum state to meet the requirements of the wafer process reaction.

[0164] like Figure 1 , Figure 5 As shown, in one embodiment, the reaction chamber 100 further includes a sealing ring 8 disposed at the gas extraction port 301 , and when the valve core 72 is located at the fourth working position, the valve plate 71 contacts the sealing ring 8 .

[0165] According to the embodiments of the present disclosure, it should be noted that:

[0166] The material and quantity of the sealing ring 8 are not specifically limited here, as long as the sealing effect is satisfied. For example, one sealing ring 8 can be provided at the air suction port 301 , or a nested double-layer sealing ring 8 can be provided at the air suction port 301 .

[0167] The sealing ring 8 is arranged at the air extraction port 301 , which can be understood as the sealing ring 8 being connected to the outer edge of the air extraction port 301 . It can also be understood as the sealing ring 8 being sleeved on the outside of the air extraction port 301 and connected to the bottom plate 3 .

[0168] According to the embodiment of the present disclosure, by providing the sealing ring 8, the sealing effect of the valve plate 71 on the air suction port 301 can be increased.

[0169] In one embodiment, if Figure 3 , Figure 4 As shown, there are multiple second support parts 61, and the multiple second support parts 61 are evenly distributed along the circumference of the wafer carrier 4.

[0170] According to the embodiments of the present disclosure, it should be noted that:

[0171] The number of the second supporting parts 61 can be selected and adjusted as needed. For example, there can be 2, 4, 5, 6, 7, or 8 second supporting parts 61 .

[0172] The sizes of the second supporting parts 61 can be kept consistent.

[0173] According to the embodiment of the present disclosure, since a plurality of second support portions 61 are evenly arranged, the second pumping area 51 between the wafer stage 4 and the chamber 1 is evenly divided into a plurality of sub-areas, and when the process gas is pumped, the process gas can evenly pass through the sub-areas of the second pumping area 51 between the second support portions 61. At the same time, the plurality of second support portions 61 can improve the stability of the wafer stage 4.

[0174] In one example, a plurality of second support portions 61 are evenly arranged on the first horizontal plane of the stage 4 along the circumference of the stage 4, and a plurality of second support portions 61 are evenly arranged on the second horizontal plane of the stage 4 along the circumference of the stage 4. The first horizontal plane and the second horizontal plane are spaced apart in the vertical direction. The projections of the second support portion 61 arranged on the first horizontal plane and the second support portion 61 arranged on the second horizontal plane in the vertical direction overlap with each other, or the projections of the second support portion 61 arranged on the first horizontal plane and the second support portion 61 arranged on the second horizontal plane in the vertical direction are staggered with each other. The process gas passes through a sub-area of ​​the second exhaust area 51 between two adjacent second support portions 61 on the same horizontal plane.

[0175] In one example, a plurality of first support portions 6 are evenly arranged along the circumference of the stage 4 on the first horizontal plane of the stage 4, and a plurality of first support portions 6 are evenly arranged along the circumference of the stage 4 on the second horizontal plane of the stage 4. The first horizontal plane and the second horizontal plane are spaced apart in the vertical direction. The projections of the first support portion 6 arranged on the first horizontal plane and the first support portion 6 arranged on the second horizontal plane in the vertical direction overlap with each other, or the projections of the first support portion 6 arranged on the first horizontal plane and the first support portion 6 arranged on the second horizontal plane in the vertical direction are staggered with each other. The process gas passes through a sub-area of ​​the second exhaust area 511 between two adjacent first support portions 6 on the same horizontal plane. The second support portion 61 may be the same support portion as the first support portion 6, or may be a different support portion, which may be selected and adjusted as needed, and is not specifically limited here. The location of the second support portion 61 relative to the first support portion 6 can be selected and adjusted as needed, and is not specifically limited here. For example, the second support portion 61 can be evenly arranged on the same horizontal plane as the first support portion 6, or the second support portion 61 can be arranged at a longitudinal projection position of a different horizontal plane of the first support portion 6. The shape and size of the first support portion 6 can be selected and adjusted as needed, and are not specifically limited here.

[0176] In one embodiment, the width of the cross section of the second supporting portion 61 along the horizontal direction is between one tenth and one half of the radius of the wafer stage 4 .

[0177] According to the embodiments of the present disclosure, it should be noted that:

[0178] The width of the cross section of the second support portion 61 along the horizontal direction can be understood as follows: the second support portion 61 has a surface that blocks the flow of airflow in the second exhaust area 51, the distance between the wafer stage 4 and the inner wall of the cavity 1 is the length of this surface, and the width of the cross section of the second support portion 61 along the horizontal direction is the width of this surface. The width of the second support portion 61 can be selected and adjusted as needed, and is not specifically limited here. For example, if the number of second support portions 61 is increased, the width of the second support portion 61 is reduced, thereby reducing the influence of the second support portion 61 on the uniform flow of airflow in the second exhaust area 51.

[0179] According to the embodiment of the present disclosure, a plurality of second support portions 61 with smaller width and uniform distribution are provided. When the process gas flows through the second exhaust region 51 , the area where the second support portions 61 block the flow of the process gas can be reduced, so that the process gas can flow evenly through the second exhaust region 51 .

[0180] In one example, the reaction chamber 100 is evenly provided with a plurality of second support portions 61 along the circumference of the wafer stage 4, and the width of the cross section of the second support portion 61 along the horizontal direction gradually decreases as the number of the second support portions 61 increases. For example, the reaction chamber 100 is evenly provided with two second support portions 61 along the circumference of the wafer stage 4, and the width of the cross section of the second support portion 61 along the horizontal direction is half of the radius of the wafer stage 4. The reaction chamber 100 is evenly provided with four second support portions 61 along the circumference of the wafer stage 4, and the width of the cross section of the second support portion 61 along the horizontal direction is one-fourth of the radius of the wafer stage 4. The reaction chamber 100 is evenly provided with five second support portions 61 along the circumference of the wafer stage 4, and the width of the cross section of the second support portion 61 along the horizontal direction is one-fifth of the radius of the wafer stage 4. The reaction chamber 100 is evenly provided with eight second support portions 61 along the circumference of the wafer stage 4 . The width of the cross section of the second support portion 61 along the horizontal direction is one eighth of the radius of the wafer stage 4 .

[0181] like Figure 1 , Figure 2 , Figure 5 As shown, in one embodiment, the second support portion 61 is a tubular structure, a first port of the second support portion 61 is connected to the cavity 1 , and a second port of the second support portion 61 is connected to the wafer stage 4 .

[0182] The power connection of the wafer stage 4 and / or the pipeline (gas supply and / or liquid supply) of the reaction chamber 100 are led out of the cavity 1 through the second port, the internal pipeline of the second support part 61, and the first port in sequence.

[0183] According to the embodiments of the present disclosure, it should be noted that:

[0184] The power connection of the wafer stage 4 may include power lines (such as high-voltage DC power lines, heating power lines), signal lines (such as thermocouple lines), etc., which are not specifically limited here.

[0185] The pipelines may include: gas pipelines (such as He (helium) gas pipelines, CDA (Compressed Dry Air, compressed dry air) pipelines), coolant pipelines, etc.

[0186] According to an embodiment of the present disclosure, the tubular structure of the second support portion 61 can prevent the power connection of the wafer stage 4 and / or the pipeline of the reaction chamber 100 from being exposed to the second exhaust area 51.

[0187] In one example, the power connection of the wafer stage 4 and / or the pipelines of the reaction chamber 100 can be respectively accommodated in different second support parts 61, or grouped and accommodated in different second support parts 61. For example, the power line, signal line, gas line, and coolant pipeline are respectively accommodated in different second support parts 61, which avoids all the lines being accommodated in one second support part 61 to affect the uniform flow of the gas flow, and is also conducive to maintenance and device safety.

[0188] According to the embodiment of the present disclosure, since the power connection of the wafer stage 4 and / or the pipeline of the reaction chamber 100 are respectively arranged in different second support parts 61, the width of the second support part 61 can be further reduced as much as possible during design. In addition, the influence of the second support part 61 on the uniform flow of the airflow in the second exhaust area 51 can be reduced.

[0189] like Figure 1 , Figure 5 As shown, in one embodiment, the reaction chamber 100 further includes a second lifting mechanism 9, and the second lifting mechanism 9 includes a second tube 91 and a rod 92. The second tube 91 is connected to the bottom plate 3, one end of the rod 92 is slidably inserted in the second tube 91, and the other end of the rod 92 extends to the interior of the cavity 1 and is connected to the valve plate 71, and the rod 92 is used to drive the valve plate 71 and the valve core 72 to perform lifting and lowering movements.

[0190] According to the embodiments of the present disclosure, it should be noted that:

[0191] The rod body 92 is used to drive the valve plate 71 and the valve core 72 to move up and down. It can be understood that the rod body 92 drives the valve core 72 to move between the third working position and the fourth working position, that is, the rod body 92 controls the opening or closing of the air pumping part 7.

[0192] The sliding manner of the rod body 92 and the second tube body 91 can be selected and adjusted according to needs, and is specifically limited here.

[0193] The material, size and location of the second tube body 91 can be selected and adjusted as needed. For example, the second tube body 91 can be a sealed bellows.

[0194] According to the embodiment of the present disclosure, the second lifting mechanism 9 can drive the valve plate 71 and the valve core 72 to perform lifting movements smoothly and stably.

[0195] In one example, the second tube body 91 is disposed outside the cavity 1, one end of the rod body 92 passes through the second tube body 91 and is connected to the valve plate 71 inside the cavity 1, and the other end of the rod body 92 passes through the second tube body 91 and is connected to a motor disposed outside the cavity 1, and the motor is used to drive the rod body 92 to slide in a vertical direction relative to the second tube body 91.

[0196] According to the embodiment of the present disclosure, since the second tube body 91 is disposed outside the cavity 1 , the process gas inside the cavity 1 can be prevented from corroding the second tube body 91 , thereby increasing the service life of the second tube body 91 .

[0197] In one embodiment, the reaction chamber 100 includes a plurality of second lifting mechanisms 9 , and the plurality of second lifting mechanisms 9 are evenly distributed along the circumference of the valve plate 71 .

[0198] According to the embodiments of the present disclosure, it should be noted that:

[0199] The plurality of second lifting mechanisms 9 may be understood as at least two second lifting mechanisms 9 .

[0200] According to the embodiment of the present disclosure, a plurality of second lifting mechanisms 9 are evenly distributed, so that the valve plate 71 and the valve core 72 can be lifted and lowered more smoothly, and the problem of the valve core 72 and the valve plate 71 being offset axially due to uneven force, thereby preventing the first annulus 73 and the second annulus 74 from forming an asymmetric structure, thereby ensuring uniform air extraction at the air extraction port 301.

[0201] An embodiment of the present disclosure provides a wafer etching device, including: a reaction chamber 100 in any one of the above embodiments.

[0202] According to the embodiments of the present disclosure, since the first heater 112 is arranged at a relative position to heat the first liner 11, during the wafer etching process, the temperature of the first liner 11 is conducive to the plasma ignition of the working reaction, thereby improving the efficiency of the wafer etching process. At the same time, during the interval time period of the wafer etching process, the first liner 11 can be heated in the absence of plasma by controlling the first heater 112. During the second wafer etching process, the first liner 11 is still at a temperature that is conducive to the wafer etching process, thereby improving the stability of the process environment of the reaction chamber 100 and further improving the uniformity of the wafer etching process results.

[0203] In one example, when the chamber 1 is provided with a second lining 12, the first lining 11 is controlled to slide to the first working position, and the wafer to be processed is transported to the wafer stage 4 through the wafer transfer port 10, and the first lining 11 is controlled to slide to the second working position. During the wafer etching process, the first heater 112 and the second heater 121 heat the first lining 11 and the second lining 12 respectively, and the air inlet is controlled to transport the process gas into the interior of the chamber 1. The heated first lining 11 and the second lining 12 are beneficial to the ignition of the plasma. At the same time, due to the coaxial arrangement of the second lining 12, the first lining 11 and the wafer stage 4, and the design structure that the inner diameters of the second lining 12 and the first lining 11 are equal, a closed and uniform airflow field is formed in the first exhaust area 52, thereby ensuring the uniformity of the wafer etching process results. After the wafer etching process, the first lining 11 is controlled to slide to the first working position, the wafer after the wafer etching process is taken out, and the first heater 112 and the second heater 121 are controlled to continuously heat the first lining 11 and the second lining 12, so that there will be no excessive temperature fluctuation inside the cavity 1, providing a stable process environment and improving the uniformity of the process results between wafers.

[0204] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0205] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0206] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0207] In the present disclosure, unless otherwise expressly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0208] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0209] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A reaction chamber, applied to a wafer etching device, characterized in that: include: A cavity body, wherein a wafer stage is arranged inside; A wafer conveying port, connected to the interior of the cavity, for conveying a wafer to the wafer stage; A first lining is disposed between the inner wall of the cavity and the outer wall of the wafer stage; The first liner is provided with ventilation holes, a first air extraction area is formed between the first liner and the top plate of the cavity, a second air extraction area is formed between the first liner and the bottom plate of the cavity, and the spatial volumes of the first air extraction area and the second air extraction area change with the change of the working position of the first liner; A first heater is disposed in the inner wall of the cavity and corresponds to the position of the first lining, and the first heater is used to heat the first lining; The air extraction part comprises a valve plate, a valve core and a valve body; the valve body is arranged outside the cavity and connected to the air extraction port, the valve plate is arranged inside the cavity and connected to the first end of the valve core, and the second end of the valve core is inserted in the air extraction port and the valve body in a liftable manner; Wherein, when the valve core is located in the working position, a first annulus is formed between the valve plate and the bottom plate, and a second annulus is formed between the valve core and the air pumping port and between the valve core and the inner wall of the valve body; the first annulus, the second annulus, the first air pumping area and the second air pumping area are coaxially arranged.

2. The reaction chamber according to claim 1, characterized in that: There are multiple first heaters, and the multiple first heaters are arranged in a vertical direction. The multiple first heaters are all electrically connected to a first controller, and the first controller is used to control the temperatures of the multiple first heaters to heat different areas of the first lining respectively.

3. The reaction chamber according to claim 1, characterized in that: Also includes: A temperature sensor is connected to the first liner and the first heater, and is used for detecting the temperature of the first liner and feeding back the temperature detection result to the first heater.

4. The reaction chamber according to claim 1, characterized in that: The first lining is slidably connected to the inner wall of the cavity and slidably mounted on the outer wall of the wafer carrier. The first lining is used to control the on / off state of the wafer transmission port by changing the working position through sliding.

5. The reaction chamber according to claim 1, characterized in that: The first heater is a radiant heater.

6. The reaction chamber according to any one of claims 1 to 5, characterized in that: The cavity includes a top plate and a bottom plate which are arranged opposite to each other in a vertical direction, the top plate is provided with an air inlet, the bottom plate is provided with an air exhaust port, and the wafer stage is located between the air inlet and the air exhaust port; the air vent connects the first air exhaust area with the second air exhaust area.

7. The reaction chamber according to claim 6, characterized in that: The first liner includes a first working position and a second working position; when the first liner slides to the first working position, the film transmission port is connected to the first air extraction area; when the first liner slides to the second working position, the film transmission port is blocked from the first air extraction area; and The heating area of ​​the first heater at least includes an area where the first liner slides between the first working position and the second working position.

8. The reaction chamber according to claim 6, characterized in that: Also includes: A second liner connected to the inner wall of the cavity and disposed close to the top plate, the second liner, the first liner and the wafer stage are coaxially disposed, and the second liner has the same inner diameter as the first liner; Among them, when the first lining slides to the first working position, the film transmission port is connected to the first air pumping area; when the first lining slides to the second working position, the first lining is joined with the second lining to form a closed first air pumping area, and the film transmission port is blocked from the closed first air pumping area.

9. The reaction chamber according to claim 8, characterized in that: Also includes: The second heater is arranged in the inner wall of the cavity and corresponds to the position of the second lining. The second heater is electrically connected to a second controller, and the second controller is used to control the temperature at which the second heater heats the second lining.

10. A wafer etching device, characterized in that: include: The reaction chamber according to any one of claims 1 to 9.

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