Resin composition, anti-etching layer and etching method

Abstract

The present invention provides a resin composition, an anti-etching layer and an etching method, wherein the resin composition comprises a resin (A), a cross-linking agent (B), a surfactant (C) and a solvent (D). The resin (A) comprises a hydroxyl type polystyrene resin (A-1), a hydroxyl type phenolic resin (A-2), a polyhydroxyphenol resin (A-3) or a combination thereof. The cross-linking agent (B) comprises a structure of a phenolic epoxy resin type (B-1), a polymethyl methacrylate type (B-2), a maleimide type (B-3) or a hyperbranched oligomer (B-4).

Description

Technical Field

[0001] The invention relates to a resin composition, and in particular to a resin composition suitable for an anti-etching layer, an anti-etching layer and an etching method. Background Art

[0002] In recent years, with the high integration and refinement of semiconductor patterns, the thickness of the photoresist layer has gradually become thinner in order to obtain higher resolution images. However, the collapse phenomenon caused by incomplete exposure of the photoresist and the difficulty of using a thinner photoresist layer to have sufficient etching selectivity to etch the layer to be etched. Therefore, under the current technology, an inorganic or organic layer with high etching resistance is prepared between the photoresist layer and the layer to be etched, and the pattern on the photoresist is first transferred to the anti-etching layer, and then the patterned anti-etching layer is used to etch the layer to be etched. This method can effectively improve the etching selectivity.

[0003] The mask patterns of the semiconductor industry have become finer, the line width has become narrower, and the height of the pattern has increased, resulting in an increase in the aspect ratio and an increase in the height of the etching layer. Therefore, problems such as bowing may occur during etching, and when the selectivity of the etching conditions is different, it will also make it difficult to perform the shielding function normally. Therefore, in addition to reducing the standing wave effect, the current research direction is to increase the overall etching selectivity by introducing an etching layer with better etching resistance. Summary of the invention

[0004] The invention provides a resin composition, an anti-etching layer and an etching method. The resin composition can be used to prepare an anti-etching layer with high flatness and excellent chemical resistance. The formulation and the etching selectivity of a photoresist or a substrate are used to achieve patterning.

[0005] The resin composition of the present invention comprises a resin (A), a crosslinking agent (B), a surfactant (C) and a solvent (D). The resin (A) comprises a hydroxyl type polystyrene resin (A-1), a hydroxyl type phenolic resin (A-2), a polyhydroxyphenol resin (A-3) or a combination thereof. The crosslinking agent (B) comprises a structure of a phenolic epoxy resin type (B-1), a polymethyl methacrylate type (B-2), a maleimide type (B-3) or a hyperbranched oligomer (B-4).

[0006] The hydroxyl type polystyrene resin (A-1) includes a chemical structure represented by the following formula (A-1),

[0007]

[0008] In formula (A-1), n ​​is an integer greater than 103 and less than 160,

[0009] The hydroxyl type phenolic resin (A-2) includes a chemical structure represented by the following formula (A-2),

[0010]

[0011] In formula (A-2), n is an integer greater than 35 and less than 168,

[0012] The polyhydroxyphenol resin (A-3) includes a chemical structure represented by the following formula (A-3):

[0013]

[0014] In formula (A-3), m is an integer of 4 or less, and n is an integer of greater than 4 and less than 113.

[0015] In one embodiment of the present invention, the molecular weight of the hydroxyl type polystyrene resin (A-1) is 12400 to 19300, the molecular weight of the hydroxyl type phenolic resin (A-2) is 4300 to 20200, and the molecular weight of the polyhydroxyphenol resin (A-3) is 600 to 12000.

[0016] In one embodiment of the present invention, the novolac epoxy resin type (B-1) includes bisphenol A novolac epoxy resin, phenol novolac epoxy resin or cresol novolac epoxy resin.

[0017] In one embodiment of the present invention, the novolac epoxy resin type (B-1) includes a compound represented by the following formula (B-1):

[0018]

[0019] In formula (B-1), R is H or (OCH 2 CH)CH 2 -, n is an integer greater than 10 and less than 45.

[0020] In one embodiment of the present invention, the polymethyl methacrylate type (B-2) includes a structure represented by the following formula (B-2):

[0021]

[0022] In formula (B-2), R 1 It is an epoxy group, a benzene ring structure, an alkane structure, an alcohol structure or an ether structure, and n is an integer greater than 53 and less than 138.

[0023] In one embodiment of the present invention, the maleimide type (B-3) includes a structure represented by the following formula (B-3):

[0024]

[0025] In formula (B-3), R 2 is cyclohexane, a benzene ring structure, an alkane structure or hydrogen, R 3 It contains a polyacrylic acid structure, a polystyrene structure, a maleic anhydride structure, an acrylic structure or a combination thereof.

[0026] In one embodiment of the present invention, the hyperbranched oligomer type (B-4) is, for example, a structure represented by the following formula (B-4):

[0027]

[0028] In one embodiment of the present invention, the amount of the resin (A) added is 0.45 wt % to 4.05 wt % based on the total weight of the resin composition.

[0029] In one embodiment of the present invention, the amount of the resin (A) added is 2.25 wt % to 3.375 wt % based on the total weight of the resin composition.

[0030] In one embodiment of the present invention, the amount of the crosslinking agent (B) added is 0.45 wt % to 4.05 wt % based on the total weight of the resin composition.

[0031] In one embodiment of the present invention, the amount of the crosslinking agent (B) added is 1.125 wt % to 2.25 wt % based on the total weight of the resin composition.

[0032] In one embodiment of the present invention, the structure of the surfactant (C) includes alcohol, ester, acid or a combination thereof containing a fluorine-functional group.

[0033] In one embodiment of the present invention, the fluorine-containing functional group includes a structure represented by the following formula (C-1):

[0034]

[0035] In formula (C-1), 6 <x+y<20。

[0036] In one embodiment of the present invention, the added amount of the surfactant (C) is 0.01 wt % to 0.1 wt % based on the total weight of the resin composition.

[0037] In one embodiment of the present invention, the addition ratio of the resin (A) is 10% to 75% based on the total weight of the resin (A) and the cross-linking agent (B).

[0038] In one embodiment of the present invention, the solvent (D) includes propylene glycol methyl ether acetate, propylene glycol methyl ether, isopropyl alcohol, methanol, acetone, n-butyl acetate, butanone, ethyl acetate, diacetone alcohol or a combination thereof.

[0039] An anti-etching layer is formed by the resin composition.

[0040] An etching method comprises immersing the above-mentioned anti-etching layer in an etching solution, wherein the film thickness loss of the anti-etching layer after immersion for 10 minutes is less than

[0041] Based on the above, the resin composition of the present invention contains a specific type of resin (A) and a cross-linking agent (B). By selecting a specific ratio and type of resin (A) and cross-linking agent (B), the chemical resistance properties can be directly affected. Therefore, the resin composition can be used to prepare an anti-etching layer with higher chemical resistance and better flatness. DETAILED DESCRIPTION

[0042] Hereinafter, embodiments of the present invention will be described in detail. However, these embodiments are illustrative only, and the present invention is not limited thereto.

[0043] In this article, the range expressed by "a value to another value" is a summary expression method to avoid listing all the values ​​in the range one by one in the specification. Therefore, the description of a specific numerical range covers any value in the numerical range and a smaller numerical range defined by any value in the numerical range, just as the arbitrary value and the smaller numerical range are written in the description text of the specification.

[0044] <Resin composition>

[0045] The present invention provides a resin composition, comprising a resin (A), a crosslinking agent (B), a surfactant (C) and a solvent (D). The above components will be described in detail below.

[0046] Resin (A)

[0047] The resin (A) includes a hydroxyl type polystyrene resin (A-1), a hydroxyl type phenol resin (A-2), a polyhydroxyphenol resin (A-3) or a combination thereof.

[0048] The hydroxyl type polystyrene resin (A-1) includes a chemical structure represented by the following formula (A-1),

[0049]

[0050] In formula (A-1), n ​​is an integer greater than 103 and less than 160,

[0051] The hydroxyl type phenolic resin (A-2) includes a chemical structure represented by the following formula (A-2),

[0052]

[0053] In formula (A-2), n is an integer greater than 35 and less than 168,

[0054] The polyhydroxyphenol resin (A-3) includes a chemical structure represented by the following formula (A-3):

[0055]

[0056] In formula (A-3), m is an integer of 4 or less, and n is an integer of greater than 4 and less than 113.

[0057] The hydroxyl type phenolic resin (A-2) can make the formed anti-etching layer have better flatness. However, due to the position of the methyl group in the ortho position, the partial charge strength of the hydroxyl group above is different, resulting in different reactivity with the secondary carbon on the crosslinking agent (B), resulting in different crosslinking ability. When the methyl group of the hydroxyl type phenolic resin (A-2) is located in the ortho position or the para position, the partial charge density of the hydroxyl group above is larger, resulting in stronger reactivity with the secondary carbon on the crosslinking agent (B), and therefore, better crosslinking ability.

[0058] The molecular weight of the hydroxyl type polystyrene resin (A-1) is 12400 to 19300, the molecular weight of the hydroxyl type phenol resin (A-2) is 4300 to 20200, and the molecular weight of the polyhydroxyphenol resin (A-3) is 600 to 12000.

[0059] Based on the total weight of the resin composition, the added amount of the resin (A) is 0.45 wt % to 4.05 wt %, preferably 2.25 wt % to 3.375 wt %.

[0060] With respect to the resin (A) in the resin composition, the hydroxyl type polystyrene resin (A-1) can make the formed anti-etching layer have good flatness and chemical resistance, the hydroxyl type phenolic resin (A-2) can make the formed anti-etching layer have relatively excellent flatness, and the polyhydroxyphenol resin (A-3) can make the polyhydroxyphenol resin (A-3) have excellent chemical resistance.

[0061] Crosslinking agent (B)

[0062] The crosslinking agent (B) includes a structure of a novolac epoxy resin type (B-1), a polymethyl methacrylate type (B-2), a maleimide type (B-3), or a hyperbranched oligomer (B-4).

[0063] The novolac epoxy resin type (B-1) includes bisphenol A novolac epoxy resin, phenol novolac epoxy resin or cresol novolac epoxy resin.

[0064] The novolac epoxy resin type (B-1) may preferably include a compound represented by the following formula (B-1):

[0065]

[0066] In formula (B-1), R is H or (OCH 2 CH)CH 2 -, n is an integer greater than 10 and less than 45. In this embodiment, the phenolic epoxy resin type (B-1) may include a structure shown in the following chemical formula:

[0067] Bisphenol A novolac epoxy resin (10 <n<45)

[0068]

[0069] Phenolic epoxy resin (10 <n<50)

[0070]

[0071] Cresol epoxy resin (10 <n<50)

[0072]

[0073] The polymethyl methacrylate type (B-2) includes the structure represented by the following formula (B-2):

[0074]

[0075] In formula (B-2), R 1 It can be an epoxy group, a benzene ring structure, an alkane structure, an alcohol structure or an ether structure, and n is an integer greater than 53 and less than 138.

[0076] In addition, the polymethyl methacrylate type (B-2) may preferably include a structure shown in the following chemical formula:

[0077] Polymethyl methacrylate resin (0 <a<30;40<b<70;5<c<30)

[0078]

[0079] Maleimide type (B-3) includes the structure represented by the following formula (B-3):

[0080]

[0081] In formula (B-3), R 2 It can be cyclohexane, a benzene ring structure, an alkane structure, or hydrogen, R 3 It contains a polyacrylic acid structure, a polystyrene structure, a maleic anhydride structure, an acrylic structure or a combination thereof.

[0082] The hyperbranched oligomer (B-4) includes the structure represented by the following formula (B-4):

[0083]

[0084] Based on the total weight of the resin composition, the addition amount of the crosslinking agent (B) is 0.45wt% to 4.05wt%, preferably 1.125wt% to 2.25wt%. Based on the total weight of the resin (A) and the crosslinking agent (B), the addition ratio of the resin (A) is 10% to 75%. When the addition ratio of the resin (A) is within this range, the formed anti-etching layer has excellent chemical resistance and flatness. However, based on the total weight of the resin (A) and the crosslinking agent (B), when the addition ratio of the resin (A) is higher than 75%, the crosslinking structure of the formula is incomplete due to the addition of too little crosslinking agent (B), which significantly reduces the chemical resistance of the anti-etching layer.

[0085] The role of the crosslinking agent (B) in the resin composition is to increase the crosslinking density of the cured product, so that the formed anti-etching layer has excellent chemical resistance and flatness.

[0086] Surfactant (C)

[0087] The surfactant (C) includes alcohol, ester, acid or a combination thereof containing a fluorine-containing functional group. The fluorine-containing functional group includes a chemical structure shown in the following formula (C-1):

[0088]

[0089] In formula (C-1), 6 <x+y<20。

[0090] The added amount of the surfactant (C) is 0.01 wt % to 0.1 wt % based on the total weight of the resin composition.

[0091] Adding surfactant (C) to the resin composition will affect the subsequent process, reduce the occurrence of uneven film distribution (Mura) and increase the flatness of the formulation. If surfactant (C) is not added, the flatness is poor. Adding surfactant (C) can improve the flatness.

[0092] Solvent (D)

[0093] The solvent (D) may include propylene glycol methyl ether acetate, propylene glycol methyl ether, isopropyl alcohol, methanol, acetone, n-butyl acetate, butanone, ethyl acetate, diacetone alcohol, or a combination thereof.

[0094] The amount of the solvent (D) used is 90 wt % to 98 wt % based on the total weight of the resin composition.

[0095] The function of the solvent (D) is to dissolve the solid components and evenly coat the solid components on the substrate through the fluidity of the liquid.

[0096] <Method for preparing resin composition>

[0097] The method for preparing the resin composition is not particularly limited. For example, the resin (A), the crosslinking agent (B), the surfactant (C) and the solvent (D) are placed in a stirrer and stirred until they are evenly mixed to obtain a liquid resin composition.

[0098] <Method for producing etching resistant layer>

[0099] An exemplary embodiment of the present invention provides an anti-etching layer formed using the resin composition.

[0100] The resin composition was coated on the substrate and placed on a baking plate at 250° C. for 2 minutes to obtain an etching-resistant layer.

[0101] The substrate may be a silicon substrate, a metal oxide layer or a metal nitride layer, and the type thereof is not particularly limited.

[0102] The coating method is not particularly limited, but a spray coating method, a roll coating method, a spin coating method, or the like may be used, and in general, a spin coating method is widely used.

[0103] <Etching method>

[0104] An exemplary embodiment of the present invention provides an etching method, wherein the above-mentioned anti-etching layer is immersed in an etching solution, the etching solution is, for example, a PM:PMA=7:3 (OK73) solution, and the film thickness loss of the anti-etching layer after immersion for 10 minutes is less than

[0105] Hereinafter, the present invention will be described in detail with reference to examples. The following examples are provided for describing the present invention, and the scope of the present invention includes the scope described in the following claims and its substitutes and modifications, and is not limited to the scope of the examples.

[0106] Embodiments of resin composition and anti-etching layer

[0107] The following describes embodiments of the resin composition and the anti-etching layer, including Examples A1 to A5, Examples B1 to B5, Examples C1 to C6, Examples D1 to D5, Examples E4 to E7, Comparative Examples B6 and B7, Comparative Examples C7 and C8, Comparative Examples D6 to D8, and Comparative Examples E1 to E3.

[0108] Example A1

[0109] a. Resin composition

[0110] The components / compounds corresponding to the numbers in Example A1 described below are as shown in the ingredient table. 3.15wt% of hydroxyl-type polystyrene resin a-1, 1.35wt% of phenolic epoxy resin structure b-1, 0.1wt% of fluorine-based alcohol-containing structure c-1 and 95.4wt% of PGMEA are stirred evenly with a stirrer to obtain the resin composition of Example A1.

[0111] b. Anti-etching layer

[0112] The resin compositions prepared in the examples were coated on a silicon substrate by spin coating and placed on a baking plate at 250° C. for 2 minutes to obtain an anti-etching layer. The obtained anti-etching layer was evaluated by the following evaluation methods.

[0113] Other Examples and Comparative Examples

[0114] The resin compositions of the remaining embodiments and comparative examples were prepared by the same steps as in Example A1, and the difference was that the types of components and the amounts used of the resin compositions were changed, and the components / compounds corresponding to the reference numbers in the remaining embodiments and comparative examples were shown in the composition table. The prepared resin compositions were made into anti-etching layers and evaluated in the following evaluation methods.

[0115] [Ingredients]

[0116]

[0117]

[0118]

[0119] <Evaluation method>

[0120] In terms of flatness, each resin composition prepared in the embodiment and the comparative example was coated on an 8-inch silicon substrate. The Cauchy parameters of the formulation were first detected by an ellipsometer, and then the parameters were set into an optical film thickness meter (DNS VM-1210) to detect the film thickness at 69 different points on the film surface and take the average film thickness and uniformity (flatness, i.e., the thickest point minus the thinnest point).

[0121] In terms of chemical resistance, the resin compositions prepared in the examples and comparative examples were coated on an 8-inch silicon substrate and immersed in a PM:PMA=7:3 (OK73) solution to measure the film thickness change before and after immersion for 10 minutes. As for the evaluation criteria, the examples must meet the flatness requirement of less than And the film thickness change is less than Otherwise it is a comparative example.

[0122] In terms of wet etching resistance, the resin compositions prepared in the examples and comparative examples were first coated on an 8-inch silicon substrate and immersed in concentrated SC1 and SC2 etching solutions, and the film thickness loss was measured before and after immersion for 10 minutes. As for the evaluation criteria, the examples must meet the requirement that the film thickness loss is less than SC1(NH 4 OH 29%:H 2 O 2 35%:H 2 O=1:1:5); SC2(HCl 37%:H 2 O 2 35%:H 2 O=1:1:5)

[0123] [Table 1]

[0124]

[0125]

[0126] The types of components used in Examples A1 to A5 and their usage amounts are listed in Table 1. The structure of the resin (A) in the resin composition formulation affects the adhesion between the etching layer and the substrate or metal layer and the chemical resistance properties. The resin (A) used in the present invention includes a hydroxyl type polystyrene resin (A-1), a hydroxyl type phenolic resin (A-2), a polyhydroxy phenol resin (A-3) or a combination thereof.

[0127] As shown in Table 1, first, a formulation was prepared for resins (A) with different structures, the same crosslinking agent (B) (phenolic epoxy resin type (B-1)), the same surfactant (C) (fluorinated alcohol-containing surfactant) and the same solvent (D) (PGMEA). The formulated resin composition was applied to the surface of the silicon substrate using a spin coating method, and then the flatness and chemical immersion resistance tests were performed. The results are listed in Table 2.

[0128] [Table 2]

[0129]

[0130] As can be seen from Table 2, Example A1 using hydroxyl type polystyrene resin (A-1) has good flatness and chemical resistance. The resin composition using hydroxyl type phenolic resin (A-2) has excellent flatness, but due to the position of the methyl group in the para position or meta position, the partial charge strength of the upper hydroxyl group is different, resulting in different reactivity with the secondary carbon on the crosslinking agent, resulting in different crosslinking capabilities (Example A2, Example A3). Example A4 and Example A5 using polyhydroxyphenol resin (A-3) have excellent chemical resistance.

[0131] [Table 3]

[0132]

[0133]

[0134] As shown in Table 3, in order to explore the formula ratio of resin (A) and crosslinking agent (B), polyhydroxyphenol resin (A-3) with excellent chemical resistance and crosslinking agent (B) phenolic epoxy resin type (B-1) were selected to prepare resin compositions in different proportions with the same surfactant (C) (fluorinated alcohol-containing surfactant) and the same solvent (D) (PGMEA). The formulated resin composition was coated on the surface of the silicon substrate using the spin coating method, and then the flatness and chemical resistance immersion tests were performed. The results are listed in Table 4.

[0135] [Table 4]

[0136]

[0137] As shown in Table 4, based on the total weight of the resin (A) and the crosslinking agent (B), when the addition ratio of the resin (A) is 10% to 75%, it has excellent chemical resistance and flatness (Examples B1 to B5). However, when the addition ratio of the resin (A) is higher than 80% (Comparative Examples B6 and B7), the crosslinking agent is added too little or not added, so that the crosslinking structure of the resin composition is incomplete, and the chemical resistance is significantly reduced.

[0138] [Table 5]

[0139]

[0140]

[0141] Since the degree and density of cross-linking will directly affect the chemical resistance of the resin composition. As shown in Table 5, in order to understand the effect of cross-linking agents (B) of different structures on the resin composition, polyhydroxyphenol resin (A-3) with excellent chemical resistance and different cross-linking agents (B) (phenolic epoxy resin type, polymethyl methacrylate type, hyperbranched urethane oligomer type, melamine type, maleimide type structure) were selected, and the same surfactant (C) (fluorine-based alcohol-containing surfactant) and the same solvent (D) (PGMEA) were used to make a formula to prepare the resin composition. The formulated resin composition was coated on the surface of the silicon substrate by spin coating, and then the flatness and chemical resistance immersion tests were performed. The results are listed in Table 6.

[0142] [Table 6]

[0143]

[0144] As shown in Table 6, the crosslinking agent (B) (Examples C1 to C6) with the structure of the phenolic epoxy resin type (B-1), polymethyl methacrylate type (B-2) or maleimide type (B-3) of the present invention is added, and its cured product has a large crosslinking density and has excellent chemical resistance and flatness. In contrast, although the comparative example C7 with the addition of the hyperbranched crosslinking agent has good flatness, its branched network structure is not easy to form a dense crosslinked structure, so it has poor chemical resistance. Comparative example C8 with the addition of a melamine structure crosslinking agent has good chemical resistance, but poor flatness.

[0145] [Table 7]

[0146]

[0147]

[0148] As shown in Table 7, experiments were conducted to investigate the effects of fluorine-based surfactants of different structures on the resin composition. Since the fluorine-based surfactant has better hydrophobicity, the same resin (A) - polyhydroxyphenol resin (A-3) and the same crosslinking agent (B) - phenolic epoxy resin structure crosslinking agent and the same solvent (D) (PGMEA) were selected to prepare the resin composition. The formulated resin composition was applied to the surface of the silicon substrate by spin coating, and then the flatness and chemical immersion resistance tests were performed. The results are listed in Table 8.

[0149] [Table 8]

[0150]

[0151] As shown in Table 8, the addition of surfactant (C) will affect the back-end process, reduce the occurrence of uneven distribution (Mura) on the film surface, and increase flatness. Comparative Example D6 shows that the flatness is poor without the addition of surfactant (C). In contrast, Examples D1 to D5, which add surfactant (C), have all been improved in terms of flatness. However, as in Comparative Examples D7 and D8, since different fluorine-based surfactants contain different numbers of fluorine-based functional group structures, the reactions they participate in in the formula are different, resulting in slight differences in chemical resistance.

[0152] Table 9 is a table of test values ​​of different composition formulas in wet etching of examples and comparative examples. As shown in Table 9, in Example A1, Example A3, and Example A4, which add different types of resins, it can be seen that hydroxyl-type polystyrene resin, hydroxyl-type phenolic resin, and polyhydroxyphenol resin all have relatively excellent wet etching resistance. In Example A4, Example C3, and Comparative Example C7, which add different types of cross-linking agents, the cross-linking agents of Example A4 and Example C3 contain epoxy groups, which form a dense cross-linking structure when cross-linked by heat, and therefore have better etching resistance. Comparative Example C7 adopts a branched network structure, which is not easy to form a dense cross-linking structure, so it has poor wet etching resistance. From Table 9, it can be seen that the resin composition of the present invention has better acid corrosion resistance. In Table 9, Solution Condition 1 (NH 4 OH 29%:H 2 O 2 35%:H 2 O=1:1:5); SC2(HCl 37%:H 2 O 2 35%:H 2 O=1:1:5).

[0153] [Table 9]

[0154]

[0155] Since the ratio of resin to crosslinker in the solid content directly affects the wet etching resistance, further wet etching tests were conducted on different content ratios. Table 10 is a composition table of Examples E4 to E7 and Comparative Examples E1 to E3 of different resins (A) and crosslinkers (B), and Table 11 is a test value table of Examples E4 to E7 and Comparative Examples E1 to E3 of different composition ratios in wet etching. As shown in Table 11, when the amount of crosslinker added is less than 1.125%, the etching resistance is significantly reduced due to the low content of the crosslinker.

[0156] Table 10

[0157]

[0158]

[0159] [Table 11]

[0160]

[0161] In summary, the resin composition of the present invention contains a specific type of resin (A) and a crosslinking agent (B). By selecting a specific ratio and type of resin (A) and crosslinking agent (B), the chemical resistance characteristics can be directly affected. Therefore, this resin composition can be used to prepare an anti-etching layer with higher chemical resistance and better flatness. Due to the addition of a specific type of resin (A), the formed anti-etching layer has good flatness and chemical resistance. The crosslinking agent (B) can make the crosslinking density of the cured product large, so the formed anti-etching layer has better chemical resistance and flatness. On the other hand, adding a surfactant (C) can improve the flatness. In this way, the purpose of patterning can be achieved by utilizing the resin composition formula and the etching selectivity of the photoresist or substrate.

[0162] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A resin composition, characterized in that: include: Resin (A) comprising hydroxyl type polystyrene resin (A-1), hydroxyl type phenolic resin (A-2), polyhydroxy phenol resin (A-3) or a combination thereof; A crosslinking agent (B) including a structure of a novolac epoxy resin type (B-1), a polymethyl methacrylate type (B-2), or a maleimide type (B-3); Surfactant (C); and Solvent (D), The hydroxyl type polystyrene resin (A-1) comprises a chemical structure represented by the following formula (A-1): In formula (A-1), n ​​is an integer greater than 103 and less than 160, The hydroxyl type phenolic resin (A-2) includes a chemical structure shown in the following formula (A-2), In formula (A-2), n is an integer greater than 35 and less than 168, The polyhydroxyphenol resin (A-3) comprises a chemical structure represented by the following formula (A-3): In formula (A-3), m is an integer of 4 or less, and n is an integer of greater than 4 and less than 113. The amount of the crosslinking agent (B) added is 1.125 wt % to 2.25 wt % based on the total weight of the resin composition. The structure of the polymethyl methacrylate type (B-2) includes the structure shown in the following chemical formula: b-4 53 < n < 138 or b-5 0<a<30;40<b<70;5<c<30, The structure of the surfactant (C) includes alcohol, ester, acid or a combination thereof containing a fluorine functional group. The fluorine-containing functional group includes the chemical structure shown in the following formula (C-1), C-7 or a combination thereof: In formula (C-1), 6 <x+y<20 c-7 The addition ratio of the resin (A) is 10% to 75% based on the total weight of the resin (A) and the crosslinking agent (B).

2. The resin composition according to claim 1, characterized in that The molecular weight of the hydroxyl type polystyrene resin (A-1) is 12400 to 19300, the molecular weight of the hydroxyl type phenolic resin (A-2) is 4300 to 20200, and the molecular weight of the polyhydroxyphenol resin (A-3) is 600 to 12000.

3. The resin composition according to claim 1, characterized in that The novolac epoxy resin type (B-1) includes bisphenol A novolac epoxy resin, phenol novolac epoxy resin or cresol novolac epoxy resin.

4. The resin composition according to claim 3, characterized in that The novolac epoxy resin type (B-1) includes a compound represented by the following formula (B-1): In formula (B-1), R is H or (OCH2CH)CH2-, and n is an integer greater than 10 and less than 45.

5. The resin composition according to claim 1, characterized in that The maleimide type (B-3) includes a structure represented by the following formula (B-3): In formula (B-3), R2 is cyclohexane, a benzene ring structure, an alkane structure or hydrogen, and R3 is a polyacrylic acid structure, a polystyrene structure, a maleic anhydride structure, an acrylic structure or a combination thereof.

6. The resin composition according to claim 1, characterized in that The resin (A) is added in an amount of 0.45 wt % to 4.05 wt % based on the total weight of the resin composition.

7. The resin composition according to claim 6, characterized in that Based on the total weight of the resin composition, the added amount of the resin (A) is 2.25 wt % to 3.375 wt %.

8. The resin composition according to claim 1, characterized in that The added amount of the surfactant (C) is 0.01 wt % to 0.1 wt % based on the total weight of the resin composition.

9. The resin composition according to claim 1, characterized in that The solvent (D) includes propylene glycol methyl ether acetate, propylene glycol methyl ether, isopropyl alcohol, methanol, acetone, n-butyl acetate, butanone, ethyl acetate, diacetone alcohol or a combination thereof. 10 . An anti-etching layer formed from the resin composition according to claim 1 .

11. An etching method, comprising immersing the anti-etching layer according to claim 10 in an etching solution, wherein the etching solution is OK73, wherein the OK73 is a solution with a mass ratio of PM:PMA=7:3, and the film thickness loss of the anti-etching layer after immersion for 10 minutes is less than

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