Semiconductor structure cleaning method

Abstract

The present disclosure provides a method for cleaning a semiconductor structure, comprising: performing a hydrophilic treatment on the surface of the semiconductor structure to form a hydrophilic layer, forming a membrane liquid layer covering the hydrophilic layer, performing a curing treatment on the membrane liquid layer to form a solidified layer having a volume different from that of the membrane liquid layer, and removing the solidified layer. The present disclosure forms a membrane liquid layer on the surface of the semiconductor structure, and performs a curing treatment on the membrane liquid layer, so that the membrane liquid layer is transformed into a solidified layer having a volume different from that of the membrane liquid layer. During the process of volume expansion or volume contraction of the solidified layer, particles and dust on the surface of the semiconductor structure can be removed, so that the particles are removed together with the solidified layer, so as to obtain a semiconductor structure with a clean surface, thereby improving the yield of the semiconductor structure in subsequent process technology.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a method for cleaning a semiconductor structure. Background Art

[0002] The semiconductor manufacturing process for manufacturing chips includes many steps, such as the deposition process for forming thin films, the etching process for patterning thin films, the cutting process for separating wafers, the planarization process, etc. The surfaces of semiconductor structures obtained by some manufacturing processes are prone to dust and particles adhering to them, which need to be cleaned and removed to ensure the yield of the semiconductor structure in subsequent manufacturing processes.

[0003] In the prior art, cleaning methods such as deionized water cleaning, water-gas two-fluid cleaning, and SC1 cleaning solution cleaning are usually used to clean the surface of the semiconductor structure. However, these methods still cannot effectively remove particulate matter and dust. Summary of the invention

[0004] The following is a summary of the subject matter of the detailed description of the present disclosure. This summary is not intended to limit the scope of the claims.

[0005] The present disclosure provides a semiconductor structure cleaning method, the semiconductor device cleaning method comprising:

[0006] Performing a hydrophilic treatment on the surface of the semiconductor structure to form a hydrophilic layer;

[0007] forming a membrane liquid layer covering the hydrophilic layer;

[0008] Performing a solidification treatment on the membrane liquid layer to form a solidified layer, wherein the volume of the solidified layer is different from the volume of the membrane liquid layer;

[0009] The solidified layer is removed.

[0010] According to some embodiments of the present disclosure, performing a hydrophilic treatment on the surface of the semiconductor structure to form a hydrophilic layer includes:

[0011] Using one of the gases selected from NH3, O2, CO, Ar, N2, and H2 to perform plasma treatment on the surface of the semiconductor structure to form the hydrophilic layer;

[0012] or,

[0013] The surface of the semiconductor structure is treated with a hydrophilic treatment liquid to form the hydrophilic layer.

[0014] According to some embodiments of the present disclosure, the hydrophilization treatment liquid includes ozone solution, hydrogen peroxide solution or ammonia solution.

[0015] According to some embodiments of the present disclosure, forming a membrane liquid layer covering the hydrophilic layer includes:

[0016] placing the semiconductor structure on a temperature-controlled chuck;

[0017] A membrane-forming liquid is coated on the surface of the hydrophilic layer, and the membrane-forming liquid covers the hydrophilic layer to form the membrane liquid layer.

[0018] According to some embodiments of the present disclosure, the membrane-forming liquid includes deionized water and / or acrylic resin.

[0019] According to some embodiments of the present disclosure, the membrane-forming liquid includes deionized water, and the step of curing the membrane liquid layer to form a solidified layer includes:

[0020] The temperature of the temperature regulating chuck is adjusted to a first preset temperature, so that the volume of the membrane liquid layer expands during the curing process to form the solidified layer.

[0021] According to some embodiments of the present disclosure, the ratio of the volume of the solidified layer to the volume of the membrane liquid layer is 1.05 to 1.15.

[0022] According to some embodiments of the present disclosure, the film-forming liquid includes acrylic resin, and the step of curing the film-forming liquid layer to form a solidified layer includes:

[0023] The temperature of the temperature regulating chuck is adjusted to a second preset temperature, so that the volume of the film liquid layer shrinks during the curing process to form the solidified layer, wherein the second preset temperature is greater than the first preset temperature.

[0024] According to some embodiments of the present disclosure, in the film-forming solution, the volume ratio of the acrylic resin is 60-70%.

[0025] According to some embodiments of the present disclosure, removing the solidified layer includes:

[0026] The deionized water at a third preset temperature is used to dissolve the solidified layer.

[0027] In the semiconductor structure cleaning method provided by the present invention, a film liquid layer is formed on the surface of the semiconductor structure and the film liquid layer is solidified so that the film liquid layer is transformed into a solidified layer with a volume different from that of the semiconductor structure. During the volume expansion or volume contraction of the solidified layer, particles and dust on the surface of the semiconductor structure can be removed, so that the particles are removed together with the solidified layer to obtain a semiconductor structure with a clean surface, thereby improving the yield of the semiconductor structure in subsequent process technology.

[0028] Other aspects will be apparent upon reading and understanding the drawings and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings incorporated into the specification and constituting a part of the specification illustrate embodiments of the present disclosure and are used together with the description to explain the principles of the embodiments of the present disclosure. In these drawings, similar reference numerals are used to represent similar elements. The drawings described below are some embodiments of the present disclosure, rather than all embodiments. For those skilled in the art, other drawings can be obtained based on these drawings without paying creative work.

[0030] Figure 1 The figure is a flow chart of a method for cleaning a semiconductor structure according to an exemplary embodiment.

[0031] Figure 2 FIG. 4 is a schematic diagram showing a method of forming a hydrophilic layer during a cleaning process of a semiconductor structure according to an exemplary embodiment.

[0032] Figure 3 The diagram is a schematic diagram showing formation of a film liquid layer during a cleaning process of a semiconductor structure according to an exemplary embodiment.

[0033] Figure 4 FIG. 4 is a schematic diagram showing a solidified layer formed during a cleaning process of a semiconductor structure according to an exemplary embodiment.

[0034] Figure 5 FIG. 4 is a schematic diagram showing removal of a solidified layer during a cleaning process of a semiconductor structure according to an exemplary embodiment.

[0035] Figure 6 is a schematic diagram showing a semiconductor structure placed on a temperature-adjusting chuck according to an exemplary embodiment.

[0036] Description of reference numerals:

[0037] 10. semiconductor structure; 20. hydrophilic layer; 30. membrane liquid layer; 40. solidified layer; 50. particulate matter; 60. temperature control chuck. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be arbitrarily combined with each other without conflict.

[0039] The semiconductor manufacturing process for manufacturing chips includes many steps, such as the deposition process for forming thin films, the etching process for patterning thin films, the cutting process for separating wafers, the planarization process, etc. The surfaces of semiconductor structures obtained by some manufacturing processes are prone to dust and particles adhering to them, which need to be cleaned and removed to ensure the yield of the semiconductor structure in subsequent manufacturing processes.

[0040] In the prior art, cleaning methods such as deionized water cleaning, water-gas two-fluid cleaning, and SC1 cleaning solution cleaning are usually used to clean the surface of the semiconductor structure. However, these methods still cannot effectively remove particulate matter and dust.

[0041] In view of this, the present disclosure provides a method for cleaning a semiconductor structure, comprising: performing a hydrophilic treatment on the surface of the semiconductor structure to form a hydrophilic layer, forming a membrane liquid layer covering the hydrophilic layer, performing a curing treatment on the membrane liquid layer to form a solidified layer with a volume different from that of the membrane liquid layer, and removing the solidified layer. The present disclosure forms a membrane liquid layer on the surface of the semiconductor structure, and performs a curing treatment on the membrane liquid layer, so that the membrane liquid layer is transformed into a solidified layer with a volume different from that of the membrane liquid layer. During the process of volume expansion or volume contraction of the solidified layer, particles and dust on the surface of the semiconductor structure can be removed, so that the particles are removed together with the solidified layer, so as to obtain a semiconductor structure with a clean surface, thereby improving the yield of the semiconductor structure in subsequent process technology.

[0042] The present disclosure is described below in conjunction with the accompanying drawings and specific embodiments. The exemplary embodiment of the present disclosure provides a method for cleaning a semiconductor structure, such as Figure 1 As shown, Figure 1 1 is a flow chart of a method for cleaning a semiconductor structure according to an exemplary embodiment, the method comprising the following steps:

[0043] Step S100, performing hydrophilic treatment on the surface of the semiconductor structure to form a hydrophilic layer;

[0044] Step S200, forming a membrane liquid layer covering the hydrophilic layer;

[0045] Step S300, curing the membrane liquid layer to form a solidified layer, the volume of the solidified layer is different from the volume of the membrane liquid layer;

[0046] Step S400: removing the solidified layer.

[0047] In this embodiment, the semiconductor structure may be a semi-finished structure formed in a semiconductor manufacturing process and having particles and dust on its surface, for example, a semiconductor structure formed by an etching process. Since the etching process removes part of the semiconductor structure, particles and dust are likely to remain on the surface of the obtained semiconductor structure. For example, the semiconductor structure may also be a semiconductor structure after a planarization process. After the semiconductor structure is ground in the planarization process, particles and dust are likely to remain on the surface of the obtained semiconductor structure. For another example, the semiconductor structure may also be a bare die obtained by a wafer cutting process. Since the cutting path of the wafer needs to be cut when the wafer is cut, the broken particles and dust at the cutting path are likely to adhere to the surface of the bare die. For another example, the semiconductor structure may also be a wafer that needs to be bonded, and so on. For the sake of convenience, the semiconductor structure is described in detail below as a wafer.

[0048] In step S100, refer to Figure 2 As shown, the surface of the semiconductor structure 10 is subjected to a hydrophilic treatment to improve the hydrophilicity of the surface of the semiconductor structure 10 and form a hydrophilic layer 20. Hydrophilicity refers to the physical property that molecules can form short-term bonds with water through hydrogen bonds. The hydrophilic treatment can be a process of forming polar groups with greater affinity for water or liquid on the surface of the semiconductor structure 10. The polar groups are grafted onto the surface of the semiconductor structure 10 to form a large number of side chains on the surface of the semiconductor structure 10 to form a hydrophilic layer 20 with affinity to the membrane liquid layer 30 (which will be described in detail later).

[0049] In some embodiments, the surface of the semiconductor structure 10 may be plasma treated with one of the gases NH3, O2, CO, Ar, N2, and H2 to form a hydrophilic layer 20. During the plasma treatment, one of the gases NH3, O2, CO, Ar, N2, and H2 may be excited at a relatively low temperature to ionize the gas to generate a low-temperature plasma, and the reaction gas is activated to form a plasma. The plasma impacts the surface of the semiconductor structure 10, and when the plasma impacts the surface of the semiconductor structure 10, it transfers its energy to the molecules or atoms on the surface of the semiconductor structure 10 to generate a series of physical and chemical reactions. For example, the plasma destroys the original chemical bonds on the surface of the semiconductor structure 10, and generates a complex chemical reaction on the surface of the semiconductor structure 10 to introduce new functional groups. The functional groups may be polar groups such as hydroxyl, carboxyl, amino, and sulfonic acid groups. The polar groups are grafted to the surface of the semiconductor structure 10 to form a large number of side chains on the surface of the semiconductor structure 10 to form a hydrophilic layer 20. That is, the hydrophilic layer 20 is formed by activating the surface of the semiconductor structure 10 by plasma used in the plasma treatment and modifying the surface of the semiconductor structure 10 .

[0050] In some embodiments, the surface of the semiconductor structure 10 may be treated with a hydrophilic treatment liquid to form a hydrophilic layer 20. When the surface of the semiconductor structure 10 is treated with a hydrophilic treatment liquid, the semiconductor structure 10 may be immersed in the hydrophilic treatment liquid for a certain period of time, or the surface of the semiconductor structure 10 may be cleaned with the hydrophilic treatment liquid so that polar groups with hydrophilicity are formed on the surface of the semiconductor structure 10 to form the hydrophilic layer 20. Exemplarily, the hydrophilic treatment liquid may include, for example, an ozone solution, a hydrogen peroxide solution, an ammonia solution, etc., but is not limited thereto.

[0051] In step S200, refer to Figure 3 As shown, a membrane liquid layer 30 covering the hydrophilic layer 20 is formed. For example, a membrane-forming liquid for forming the membrane liquid layer 30 can be used to cover the surface of the hydrophilic layer 20 by spraying, coating, etc., so as to form the membrane liquid layer 30 on the surface of the hydrophilic layer 20. Alternatively, a membrane-forming liquid can be supplied to the surface of the hydrophilic layer 20, and the membrane-forming liquid is coated on the surface of the hydrophilic layer 20 to form the membrane liquid layer 30. Exemplarily, the membrane-forming liquid of the membrane liquid layer 30 can be deionized water or a water-based coating, such as a water-based acrylic resin, but is not limited thereto.

[0052] Since the hydrophilic layer 20 is set on the surface of the semiconductor structure 10 in the aforementioned steps, the membrane liquid layer 30 has affinity with the hydrophilic layer 20, so that the adhesion between the membrane liquid layer 30 and the surface of the semiconductor structure 10 is enhanced, and the defects between the membrane liquid layer 30 and the surface of the semiconductor structure 10 are reduced, so that the formed membrane liquid layer 30 can adhere to, stay and evenly diffuse on the surface of the semiconductor structure 10.

[0053] In step S300, refer to Figure 4 As shown, the film liquid layer 30 is subjected to a curing treatment, and the curing treatment is a treatment process in which the film liquid layer 30 is transformed from a liquid state to a solid state. Exemplarily, the condensation temperature of the material forming the film liquid layer 30 can be used to adjust the temperature of the semiconductor structure 10 to the condensation temperature so that the film liquid layer 30 is transformed from a liquid state to a solid state to form a solidified layer 40. The volume of the solidified layer 40 is different from the volume of the film liquid layer 30 before curing. For example, the volume of the solidified layer 40 may be greater than the volume of the film liquid layer 30, or the volume of the solidified layer 40 may be less than the volume of the film liquid layer 30. In the process of curing the film liquid layer 30 to form the solidified layer 40, the film liquid layer 30 slowly solidifies and begins to produce a volume change. During the volume change process, the slowly solidified material can remove the particles 50 on the surface of the semiconductor structure 10, so that after the curing treatment is completed, the particles 50 are covered by the solidified layer 40. For example, when the material forming the membrane liquid layer 30 is deionized water, the solidification process may be to cool the membrane liquid layer 30 to below 0° C. so that the deionized water condenses into ice, that is, to form the solidified layer 40 .

[0054] In step S400, reference Figure 4 and Figure 5 As shown, when removing the solidified layer 40, a specific reagent can be used to completely or partially dissolve the solidified layer 40, so that the solidified layer 40 is separated from the surface of the semiconductor structure 10. In the process of the solidified layer 40 being separated, the particulate matter 50 coated in the solidified layer 40 is also separated from the surface of the semiconductor structure 10, so that the surface cleanliness of the semiconductor structure 10 after cleaning is higher, which is beneficial to improving the yield of the subsequent process technology of the semiconductor structure 10. Exemplarily, when the semiconductor structure 10 is a wafer or a bare chip, and the wafer or the bare chip needs to be subjected to a heterogeneous bonding process, since the surface of the semiconductor structure 10 has good cleanliness and smoothness, the bonding process of the semiconductor structure 10 has good reliability, and the semiconductor structure 10 after bonding has good electrical connection.

[0055] In some possible implementations, in step S200, forming a membrane liquid layer covering the hydrophilic layer includes:

[0056] Step S210, placing the semiconductor structure on a temperature-adjusting chuck;

[0057] Step S220 , coating a membrane-forming liquid on the surface of the hydrophilic layer, so that the membrane-forming liquid covers the hydrophilic layer to form a membrane liquid layer.

[0058] In the embodiment, reference Figure 6 As shown, the size of the component used to support the semiconductor structure 10 by the temperature-adjusting chuck 60 is close to the size of the semiconductor structure 10. The temperature-adjusting chuck 60 is used to provide a specific temperature to the semiconductor structure 10 and can drive the semiconductor structure 10 to rotate. When the semiconductor structure 10 is placed on the temperature-adjusting chuck 60, the semiconductor structure 10 is placed on the temperature-adjusting chuck 60. Figure 2 and Figure 6 As shown, one side surface of the semiconductor structure 10 without the hydrophilic layer 20 is brought into contact with the temperature-adjusting chuck 60, so that the one side surface of the semiconductor structure 10 with the hydrophilic layer 20 faces upward. When the film-forming liquid is applied to the surface of the semiconductor structure 10, a spray of the film-forming liquid can be provided to the surface of the semiconductor structure 10 so that the film-forming liquid covers the surface of the semiconductor structure 10 to form a film-forming liquid layer 30 covering the hydrophilic layer 20; or a liquid film-forming liquid can be provided to the surface of the semiconductor structure 10, and the temperature-adjusting chuck 60 is controlled to rotate to drive the semiconductor structure 10 to rotate, and the film-forming liquid is diffused on the surface of the semiconductor structure 10 under the action of the centrifugal force generated by the rotation of the semiconductor structure 10, covering the hydrophilic layer 20 on the surface of the semiconductor structure 10 to form a film-forming liquid layer 30.

[0059] In some embodiments, the film-forming liquid is deionized water (DIW). Compared with other materials, deionized water is cheap and easy to obtain, and the process of curing it is simple, and the process of removing it to form a solidified layer is also relatively simple, which is conducive to the mass production of the cleaning method of the semiconductor structure provided by the present disclosure during industrial manufacturing. In deionized water, each water molecule includes two hydrogen atoms and one oxygen atom, and the hydrogen atom of one water molecule tends to adhere to the oxygen atom of another water molecule to form a hydrogen bond. When the deionized water is in a liquid state, that is, in the film liquid layer, the oxygen atoms and hydrogen atoms in multiple water molecules adhere to each other in a disordered manner, and several water molecules are combined by hydrogen bonds to form (H2O)n, which has a small volume. When the deionized water condenses into ice, that is, in the solidified layer, multiple water molecules will be arranged to form the most stable state, and the water molecules are widely connected to each other by hydrogen bonds to form relatively loose crystals. There are many gaps in the solidified layer, causing the volume of the solidified layer to be greater than the volume of the film liquid layer, so that the solidified layer removes particulate matter from the surface of the semiconductor structure. Exemplarily, the membrane-forming liquid may also be an aqueous solution, such as a sodium chloride solution, clean water with impurities such as calcium and magnesium ions, and the like.

[0060] In some possible implementations, the membrane-forming liquid includes deionized water. In step S300, the membrane-forming liquid layer is solidified to form a solidified layer, including:

[0061] The temperature of the temperature regulating chuck is adjusted to a first preset temperature, so that the volume of the film liquid layer expands during the curing process to form a solidified layer.

[0062] In this embodiment, combined with Figure 4 and Figure 6 As shown, since the semiconductor structure 10 is placed on the temperature-adjusting chuck 60, the temperature of the temperature-adjusting chuck 60 is adjusted to a first preset temperature, and the first preset temperature can be any temperature less than 0°C. Exemplarily, in order to avoid affecting the strength of the semiconductor devices and materials inside the semiconductor structure 10, the first preset temperature can be any temperature value between -30°C and -5°C, while ensuring that the deionized water can be transformed from liquid to solid and expand in volume to form a solidified layer 40, while avoiding too low a temperature from causing adverse effects on the semiconductor structure 10. In the process of deionized water turning into ice, as the hydrogen bonds between water molecules are rearranged, the solidified layer 40 formed can remove the particles 50 from the surface of the semiconductor structure 10 and cover the particles 50 inside the solidified layer 40. Exemplarily, based on the different components of the film-forming liquid forming the film liquid layer, the ratio of the volume of the solidified layer to the volume of the film liquid layer can be any value in the range of 1.05 to 1.15, for example, it can be 1.05, 1.07, 1.10, 1.15, etc. When the membrane-forming liquid is deionized water, the ratio of the volume of the solidified layer to the volume of the membrane liquid layer is 1.09.

[0063] In some embodiments, the film-forming liquid includes an acrylic resin, which can be used as a base material in the film-forming liquid. The film-forming liquid can also include a solvent, such as ethanol, water, etc., so that the acrylic resin can be dispersed in the film-forming liquid. When the film-forming liquid is in a liquid state and covers the hydrophilic layer, that is, in the film liquid layer, the acrylic resin is evenly dispersed in the solvent. When the film-forming liquid is solidified, that is, in the solidified layer, the solvent evaporates, so that the volume of the solidified layer is smaller than the volume of the film liquid layer, and the particulate matter is removed from the surface of the semiconductor structure during the volume contraction of the solidified layer. Exemplarily, when the film-forming liquid includes an acrylic resin and deionized water, the film-forming liquid is an aqueous acrylic resin.

[0064] In some possible implementations, the film-forming liquid includes acrylic resin, and in step S300, the film-forming liquid layer is cured to form a solidified layer, including:

[0065] The temperature of the temperature regulating chuck is adjusted to a second preset temperature, so that the volume of the film liquid layer shrinks during the curing process to form a solidified layer, wherein the second preset temperature is greater than the first preset temperature.

[0066] In this embodiment, combined with Figure 4 and Figure 6 As shown, since the semiconductor structure 10 is placed on the temperature-adjusting chuck 60, the temperature of the temperature-adjusting chuck 60 is adjusted to the second preset temperature, so that the film liquid layer 30 is cured to form a solidified layer 40. The second preset temperature can be any temperature value greater than the lowest film-forming temperature of the acrylic resin. In order to avoid affecting the strength of the semiconductor devices and materials inside the semiconductor structure 10, the second preset temperature can be any temperature value between 110°C and 120°C, that is, the second preset temperature is greater than the first preset temperature. During the thermal curing process of the film liquid layer 30, first, the solvent such as water and ethanol in the film liquid layer 30 volatilizes, and the acrylic resin particles in the film liquid layer 30 are closely arranged. Further, the acrylic resin particles are deformed, and the deformed acrylic resin particles can be closely stacked, and the gaps between the acrylic resin particles become smaller. Finally, the deformed acrylic resin particles are further merged to form a film, that is, to form a solidified layer 40. During the formation of the solidified layer 40, the particles 50 can be removed from the surface of the semiconductor structure 10, and the particles 50 can be coated inside the solidified layer 40.

[0067] Exemplarily, when the film-forming liquid for forming the film-forming liquid layer 30 includes acrylic resin, the film-forming liquid may also include other additives such as film-forming aids, defoamers and antifoamers, wetting agents, thickeners, etc., so that the film-forming liquid can stably adhere to the surface of the semiconductor structure 10 to form the film-forming liquid layer 30, so that in the process of forming the solidified layer 40, the solidified layer 40 can stably remove the particles on the surface of the semiconductor structure 10, thereby improving the cleanliness of the surface of the semiconductor structure 10. In the film-forming liquid, the volume proportion of acrylic resin should be as high as possible, for example, it can be 60-70%, so that the content of effective film-forming materials in the film-forming liquid is higher, so as to improve the process of forming the solidified layer 40 by curing the film-forming liquid layer 30, and stably remove the particles on the surface of the semiconductor structure 10.

[0068] In some possible implementations, in step S400, removing the solidified layer includes:

[0069] Deionized water at a third preset temperature is used to dissolve the solidified layer.

[0070] In this embodiment, combined with Figure 4 and Figure 5 As shown, since the main component of the solidified layer 40 is a film layer formed by ice or acrylic resin, in order to avoid affecting the strength of the semiconductor devices and materials inside the semiconductor structure 10, the layer 40 is quickly solidified at the same time, and the third preset temperature can be any temperature value between 25°C and 80°C. Deionized water at the third preset temperature is provided to the surface of the semiconductor structure 10, so that the solidified layer 40 is gradually dissolved. The solidified layer 40 is separated from the surface of the semiconductor structure 10, so that the particles 50 coated in the solidified layer 40 are also separated from the surface of the semiconductor structure 10, so as to obtain a semiconductor structure 10 with a clean surface.

[0071] The various embodiments or implementation methods in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referenced to each other.

[0072] In the description of this specification, reference to the terms "embodiment", "exemplary embodiment", "some embodiments", "illustrative embodiment", "example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure.

[0073] In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0074] In the description of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure.

[0075] It is to be understood that the terms "first", "second", etc. used in the present disclosure can be used to describe various structures in the present disclosure, but these structures are not limited by these terms. These terms are only used to distinguish a first structure from another structure.

[0076] In one or more of the accompanying drawings, the same elements are represented by similar reference numerals. For the sake of clarity, the parts in the accompanying drawings are not drawn to scale. In addition, some well-known parts may not be shown. For the sake of simplicity, the structure obtained after several steps can be described in one figure. Many specific details of the present disclosure, such as the structure, materials, dimensions, processing technology and technology of the device are described below to more clearly understand the present disclosure. However, as those skilled in the art will appreciate, the present disclosure may not be implemented in accordance with these specific details.

[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A method for cleaning a semiconductor structure, characterized in that: The semiconductor structure cleaning method comprises: Performing a hydrophilic treatment on the surface of the semiconductor structure to form a hydrophilic layer; Forming a membrane liquid layer covering the hydrophilic layer, comprising: placing the semiconductor structure on a temperature-adjusting chuck, coating a membrane-forming liquid on the surface of the hydrophilic layer, the membrane-forming liquid covering the hydrophilic layer to form a membrane liquid layer, the membrane-forming liquid comprising deionized water; The film liquid layer is subjected to a curing treatment to form a solidified layer, comprising: adjusting the temperature of the temperature regulating chuck to a first preset temperature to solidify the film liquid layer, wherein the volume of the film liquid layer expands during the curing treatment to form the solidified layer, the volume of the solidified layer is different from the volume of the film liquid layer, and the ratio of the volume of the solidified layer to the volume of the film liquid layer is 1.05 to 1.15; or Forming a membrane liquid layer covering the hydrophilic layer, comprising: placing the semiconductor structure on a temperature-adjusting chuck, coating a membrane-forming liquid on the surface of the hydrophilic layer, the membrane-forming liquid covering the hydrophilic layer to form a membrane liquid layer, the membrane-forming liquid comprising an acrylic resin, the volume ratio of the acrylic resin in the membrane-forming liquid being 60-70%; The step of curing the membrane liquid layer to form a solidified layer comprises: adjusting the temperature of the temperature regulating chuck to a second preset temperature, so that the volume of the film liquid layer shrinks during the curing process to form the solidified layer, wherein the second preset temperature is greater than the first preset temperature; The solidified layer is removed.

2. The semiconductor structure cleaning method according to claim 1, characterized in that: The surface of the semiconductor structure is subjected to a hydrophilic treatment to form a hydrophilic layer, comprising: Using one of the gases selected from NH3, O2, CO, Ar, N2, and H2 to perform plasma treatment on the surface of the semiconductor structure to form the hydrophilic layer; or, The surface of the semiconductor structure is treated with a hydrophilic treatment liquid to form the hydrophilic layer.

3. The semiconductor structure cleaning method according to claim 2, characterized in that: The hydrophilization treatment liquid includes ozone solution, hydrogen peroxide solution or ammonia water.

4. The semiconductor structure cleaning method according to claim 1, characterized in that: Removing the solidified layer comprises: The deionized water at a third preset temperature is used to dissolve the solidified layer.

Images