Preparation method of chip type three-terminal capacitor filter

Abstract

The present application provides a method for preparing a chip-type three-terminal capacitive filter, comprising: arranging a first inner electrode layer and a second inner electrode layer which are arranged at intervals on a dielectric diaphragm, the dielectric diaphragm provided with the first inner electrode layer being a first region, the dielectric diaphragm provided with the second inner electrode layer being a second region, the number of the first inner electrode layer and the second inner electrode layer being at least two and being arranged at intervals, and the areas of the first region and the second region being the same; stacking the dielectric diaphragm provided with the first inner electrode layer on the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product, wherein, in a direction from the first inner electrode layer toward the second inner electrode layer, the orthographic projection of the first inner electrode layer and the orthographic projection of the adjacent second inner electrode layer stacked below the first inner electrode layer are arranged at intervals; and cutting the laminated semi-finished product to form a chip-type three-terminal capacitive filter, so as to achieve the purpose of reducing internal stress.

Description

Technical Field

[0001] The present application relates to the technical field of electronic ceramic components, and in particular to a method for preparing a chip-type three-terminal capacitive filter. Background Art

[0002] Compared with conventional multilayer ceramic capacitors (MLCC), multilayer ceramic chip filters (MLCF) have a pair of ground electrodes in the width direction. By setting the ground electrodes, the current can flow in from both ends of the chip and out from the middle ground electrode, thereby shortening the current path by half. At the same time, because the current can flow out from the four electrode directions and the existence of self-inductance, the equivalent series inductance (ESL) of the chip can be greatly reduced.

[0003] Due to the existence of the grounding electrode, two sets of different internal electrode layers must be designed when designing the printed screen, to lead out the internal electrode in the length and width directions respectively, and then stack them on the same block in sequence. After the cutting is completed, the internal electrode can be led out in the length and width directions at the same time to meet the requirements of the MLCF grounding electrode.

[0004] However, in the design method currently used to design the MLCF printed screen, in order to facilitate cutting and lead-out of the terminal electrode and the grounding electrode, a part of the second internal electrode layer is usually designed to remain on the first internal electrode layer, or a part of the first internal electrode layer is designed to remain on the second internal electrode layer. As a result, in the process of cutting the laminated semi-finished product of the first internal electrode layer and the second internal electrode layer, part of the structure of the first internal electrode layer or the second internal electrode layer is likely to remain on the dielectric diaphragm below or above it where the second internal electrode layer and the first internal electrode layer are adjacently arranged, which in turn causes the remaining internal electrode layer to have an overlapping area with the adjacent internal electrode layer below or above it, resulting in a large height difference in the remaining internal electrode area, resulting in increased internal stress, causing the MLCF to easily experience lamination and delamination during the lamination-cutting process, and even cracking after sintering or sintering the terminal electrodes, thereby affecting the performance of the MLCF. Summary of the invention

[0005] In view of this, the present application provides a method for preparing a chip-type three-terminal capacitive filter to reduce the internal stress of the chip-type three-terminal capacitive filter.

[0006] The present application provides a method for preparing a chip-type three-terminal capacitive filter, comprising:

[0007] A dielectric diaphragm is provided, on which a first inner electrode layer and a second inner electrode layer are arranged at intervals, the dielectric diaphragm provided with the first inner electrode layer is a first region, and the dielectric diaphragm provided with the second inner electrode layer is a second region, the first inner electrode layer and the second inner electrode layer are at least two in number and are arranged at intervals, and the first region and the second region have the same area;

[0008] The dielectric diaphragm provided with the first inner electrode layer is stacked on the dielectric diaphragm provided with the second inner electrode layer to form a stacked semi-finished product, wherein in a direction from the first inner electrode layer toward the second inner electrode layer, an orthographic projection of the first inner electrode layer and an orthographic projection of the adjacent second inner electrode layer stacked below the first inner electrode layer are arranged at an interval;

[0009] The laminated semi-finished product is subjected to water pressure and cutting treatment to form a chip-type three-terminal capacitive filter.

[0010] In some embodiments, providing a dielectric diaphragm, and providing a first inner electrode layer and a second inner electrode layer spaced apart on the dielectric diaphragm, comprises:

[0011] Providing at least one printing screen and at least one dielectric film, each of the printing screens comprises a first graphic region and a second graphic region which are adjacently arranged and have the same area, each of the first graphic regions is provided with at least two first inner electrode patterns which are spaced apart, and each of the second graphic regions is provided with at least two second inner electrode patterns which are spaced apart;

[0012] The first inner electrode pattern and the second inner electrode pattern are both printed on the dielectric film through the printing screen to form a first inner electrode layer and a second inner electrode layer respectively.

[0013] In some embodiments, the length and width of the printing screen provided with the first graphic area and the second graphic area are 310 mm and 150 mm respectively;

[0014] The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises:

[0015] A laminating machine with a length and width of 150 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

[0016] In some embodiments, the length and width of the printing screen provided with the first graphic area and the second graphic area are 640 mm and 310 mm respectively;

[0017] The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises:

[0018] A laminating machine with a length and width of 310 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

[0019] In some embodiments, the length and width of the printing screen provided with the first graphic area and the second graphic area are both 310 mm;

[0020] The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises:

[0021] A laminating machine with a length and width of 150 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

[0022] In some embodiments, providing a dielectric diaphragm, and providing a first inner electrode layer and a second inner electrode layer spaced apart on the dielectric diaphragm, comprises:

[0023] Providing at least two printing screens and at least two dielectric films, one of the printing screens comprises at least one first graphic area, each of which is provided with at least two first inner electrode patterns spaced apart from each other, and the other printing screen comprises at least one second graphic area, each of which has the same area as one of the second graphic areas, each of which has at least two second inner electrode patterns spaced apart from each other;

[0024] The first internal electrode pattern is printed on one dielectric film by one printing screen provided with the first graphic area, and the second internal electrode pattern is printed on another dielectric film by another printing screen provided with the second graphic area, so as to form a first internal electrode layer and a second internal electrode layer respectively.

[0025] In some embodiments, the length and width of each of the first printing screens are 150 mm, and the length and width of each of the second printing screens are 150 mm;

[0026] The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises:

[0027] A three-axis laminating machine with a length and width of 150 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

[0028] In some embodiments, the length and width of each of the first printing screens are 310 mm, and the length and width of each of the second printing screens are 310 mm;

[0029] The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises:

[0030] A three-axis laminating machine with a length and width of 310 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

[0031] In some embodiments, the spacing between every two adjacent first inner electrode layers is equal.

[0032] In some embodiments, the spacing between every two adjacent second inner electrode layers is equal.

[0033] The present application provides a method for preparing a chip-type three-terminal capacitive filter, comprising: providing a dielectric diaphragm, arranging a first inner electrode layer and a second inner electrode layer arranged at intervals on the dielectric diaphragm, the dielectric diaphragm provided with the first inner electrode layer is a first region, the dielectric diaphragm provided with the second inner electrode layer is a second region, the number of the first inner electrode layer and the second inner electrode layer is at least two and arranged at intervals, and the areas of the first region and the second region are the same; stacking the dielectric diaphragm provided with the first inner electrode layer on the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product, wherein, in a direction from the first inner electrode layer toward the second inner electrode layer, the orthographic projection of the first inner electrode layer and the orthographic projection of the adjacent second inner electrode layer stacked below the first inner electrode layer are arranged at intervals; through structural design, the problem of residual part of the inner electrode layer between the first inner electrode layer and the second inner electrode layer is solved, and the problem of height difference caused by the residual inner electrode layer generating overlapping areas between adjacent electrode layers is reduced, and then the green body is cut to form a chip-type three-terminal capacitive filter, so as to achieve the purpose of reducing the internal stress of the chip-type three-terminal capacitive filter. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 It is a flow chart of a method for preparing a chip-type three-terminal capacitive filter provided by the present application;

[0036] Figure 2 It is a first structural schematic diagram of a printed screen and a dielectric diaphragm in the method for preparing a chip-type three-terminal capacitive filter provided by the present application;

[0037] Figure 3-Figure 6 It is a schematic diagram of the process structure of the method for preparing the chip-type three-terminal capacitive filter provided by the present application;

[0038] Figure 7 It is a second structural schematic diagram of a printed screen and a dielectric diaphragm in the method for preparing a chip-type three-terminal capacitive filter provided by the present application;

[0039] Figure 8 This is a third structural schematic diagram of a printed screen and a dielectric diaphragm in the method for preparing a chip-type three-terminal capacitive filter provided in the present application.

[0040] Reference numerals

[0041] 100, printed screen; 110, first graphic area; 120, second graphic area; 130, first internal electrode pattern; 140, second internal electrode pattern; 200, dielectric diaphragm; 210, first area; 220, second area; 300, first internal electrode layer; 310, first internal electrode; 400, second internal electrode layer; 410, second internal electrode; 500, laminated semi-finished product; 600, chip-type three-terminal capacitive filter. DETAILED DESCRIPTION

[0042] The technical solutions in the embodiments of the present application are clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In the absence of conflict, the following embodiments and their technical features can be combined with each other.

[0043] The present application provides a method for preparing a chip-type three-terminal capacitive filter, comprising:

[0044] S11. Provide a dielectric diaphragm, and arrange a first inner electrode layer and a second inner electrode layer on the dielectric diaphragm, the dielectric diaphragm with the first inner electrode layer is the first area, and the dielectric diaphragm with the second inner electrode layer is the second area. The number of the first inner electrode layer and the second inner electrode layer is at least two and they are arranged at intervals, and the areas of the first area and the second area are the same.

[0045] S12. Stacking a dielectric diaphragm provided with a first inner electrode layer onto a dielectric diaphragm provided with a second inner electrode layer to form a laminated semi-finished product, wherein, in a direction from the first inner electrode layer toward the second inner electrode layer, an orthographic projection of the first inner electrode layer and an orthographic projection of an adjacent second inner electrode layer stacked below the first inner electrode layer are spaced apart.

[0046] S13, performing water pressure and cutting processing on the laminated semi-finished product to form a chip-type three-terminal capacitive filter.

[0047] In the present application, the first inner electrode layer and the second inner electrode layer are respectively arranged in the dielectric film layers of two different areas instead of the existing method of alternately arranging the first inner electrode layer and the second inner electrode layer in the dielectric film layers of the same area, so as to avoid that when a dielectric film sheet provided with the first inner electrode layer and the second inner electrode layer is stacked on another dielectric film sheet provided with the first inner electrode layer and the second inner electrode layer, an overlapping area is easily formed between the adjacent first inner electrode layer of the first inner electrode layer stacked on the upper side and the second inner electrode layer stacked therebelow, thereby avoiding that, during cutting, part of the structure of the first inner electrode layer or the second inner electrode layer remains on the dielectric film sheet provided with the second inner electrode layer and the first inner electrode layer adjacent thereto below or above it, thereby reducing the high height difference of the remaining inner electrode area, thereby reducing the internal stress of the MLCF, and avoiding the lamination delamination phenomenon of the MLCF during the lamination process, thereby ensuring the performance of the MLCF.

[0048] See also Figure 1-Figure 6 , Figure 1 It is a flow chart of a method for preparing a chip-type three-terminal capacitive filter provided by the present application; Figure 2 It is a first structural schematic diagram of a printed screen and a dielectric diaphragm in the method for preparing a chip-type three-terminal capacitive filter provided by the present application; Figure 3-Figure 6 Schematic diagram of the process structure of the method for preparing a chip-type three-terminal capacitive filter provided by the present application. The present application provides a method for preparing a chip-type three-terminal capacitive filter 600, and the method is described as follows.

[0049] Example 1

[0050] S11. Provide a dielectric diaphragm, and arrange a first inner electrode layer and a second inner electrode layer on the dielectric diaphragm, the dielectric diaphragm with the first inner electrode layer is the first area, and the dielectric diaphragm with the second inner electrode layer is the second area. The number of the first inner electrode layer and the second inner electrode layer is at least two and they are arranged at intervals, and the areas of the first area and the second area are the same.

[0051] See also Figure 2 Specifically, at least one printing screen 100 and at least one dielectric film 200 are provided. Each printing screen 100 includes a first graphic area 110 and a second graphic area 120 which are adjacently arranged and have the same area. The length and width of the printing screen 100 provided with the first graphic area 110 and the second graphic area 120 are 310 mm and 150 mm respectively; each first graphic area 110 is provided with at least two first inner electrode patterns 130 which are spaced apart, and each second graphic area 120 is provided with at least two second inner electrode patterns 140 which are spaced apart.

[0052] See also Figure 3 Then, the first inner electrode pattern 130 and the second inner electrode pattern 140 are printed on a dielectric film 200 through a printing screen 100 to form a first inner electrode layer 300 and a second inner electrode layer 400, respectively, wherein the dielectric film 200 provided with the first inner electrode layer 300 is the first area 210, and the dielectric film 200 provided with the inner electrode layer of the second area 220 is the second area 220, and the number of the first inner electrode layer 300 and the second inner electrode layer 400 is at least two and is arranged at intervals, and the area of ​​the first area 210 and the area of ​​the second area 220 are the same. The spacing between every two adjacent first inner electrode layers 300 is equal, and the spacing between every two adjacent second inner electrode layers 400 is equal. Optionally, the distance between every two adjacent first inner electrode layers 300 is equal to the distance between every two adjacent second inner electrode layers 400.

[0053] S12. Stacking a dielectric diaphragm provided with a first inner electrode layer onto a dielectric diaphragm provided with a second inner electrode layer to form a laminated semi-finished product, wherein, in a direction from the first inner electrode layer toward the second inner electrode layer, an orthographic projection of the first inner electrode layer and an orthographic projection of an adjacent second inner electrode layer stacked below the first inner electrode layer are spaced apart.

[0054] See also Figure 4Specifically, a laminating machine with a length and width of 150 mm is used to stack the dielectric diaphragm 200 provided with the first inner electrode layer 300 on the dielectric diaphragm 200 provided with the second inner electrode layer 400 to form a laminated semi-finished product 500 with a length and width of 150 mm. The pattern of the first inner electrode layer 300 can be interchangeable with the pattern shape of the second inner electrode layer 400, that is, the order of stacking the dielectric diaphragm 200 provided with the first inner electrode layer 300 and the dielectric diaphragm 200 provided with the second inner electrode layer 400 is not limited. In the formed laminated semi-finished product 500, in the direction from the first inner electrode layer 300 to the second inner electrode layer 400, the orthographic projection of the first inner electrode layer 300 and the orthographic projection of the adjacent second inner electrode layer 400 stacked below the first inner electrode layer 300 are arranged at an interval.

[0055] S13, performing water pressure and cutting processing on the laminated semi-finished product to form a chip-type three-terminal capacitive filter.

[0056] See also Figure 5 and Figure 6 Specifically, the laminated semi-finished product 500 is cut along the cutting line a on the laminated semi-finished product 500 by using a circular knife, a guillotine or laser cutting method, the first inner electrode layer 300 is cut into a plurality of first inner electrodes 310 arranged at intervals, and the second inner electrode layer 400 is cut into a plurality of second inner electrodes 410 arranged at intervals, and other subsequent processes are continued to form a chip-type three-terminal capacitive filter 600. The orthographic projection of the cutting line a on the laminated semi-finished product 500 is arranged at intervals from the orthographic projection of the adjacent second inner electrode layer 400 which is overlapped with the first inner electrode layer 300 and is below the first inner electrode layer 300.

[0057] In the present application, the first inner electrode layer 300 and the second inner electrode layer 400 are respectively arranged in the dielectric film layers of two different areas instead of the existing method of alternately arranging the first inner electrode layer 300 and the second inner electrode layer 400 in the dielectric film layers of the same area, so as to avoid that when a dielectric film sheet 200 provided with the first inner electrode layer 300 and the second inner electrode layer 400 is stacked on another dielectric film sheet 200 provided with the first inner electrode layer 300 and the second inner electrode layer 400, it is easy to form an overlapping area between the adjacent first inner electrode layer 300 of the first inner electrode layer 300 stacked on the upper side and the second inner electrode layer 400 stacked thereunder, thereby avoiding that, during cutting, part of the structure of the first inner electrode layer 300 or the second inner electrode layer 400 remains on the dielectric film sheet 200 with the second inner electrode layer 400 and the first inner electrode layer 300 arranged thereunder or above it, and the high height difference of the remaining inner electrode area is reduced, thereby reducing the internal stress of the MLCF, and avoiding the phenomenon of lamination delamination of the MLCF during the lamination process, thereby ensuring the performance of the MLCF.

[0058] Example 2

[0059] Please continue reading Figure 2-Figure 6 It should be noted that the difference between Example 2 and Example 1 is that the length and width of the printing screen 100 provided with the first graphic area 110 and the second graphic area 120 are 640 mm and 310 mm respectively;

[0060] The dielectric diaphragm provided with the first inner electrode layer is stacked on the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product, comprising:

[0061] A laminating machine with a length and width of 310 mm is used to stack the dielectric film 200 with the first inner electrode layer 300 on the dielectric film 200 with the second inner electrode layer 400 to form a laminated semi-finished product 500 with a length and width of 310 mm. Others are the same as in Example 1 and will not be repeated here.

[0062] Example 3

[0063] Please continue reading Figure 7 It should be noted that the difference between Example 3 and Example 1 is that the length and width of the printing screen 100 provided with the first graphic area 110 and the second graphic area 120 are both 310 mm;

[0064] The dielectric diaphragm provided with the first inner electrode layer is stacked on the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product, comprising:

[0065] A laminating machine with a length and width of 150 mm is used to stack the dielectric film 200 with the first inner electrode layer 300 on the dielectric film 200 with the second inner electrode layer 400 to form a laminated semi-finished product 500 with a length and width of 150 mm. Others are the same as in Example 1 and will not be repeated here.

[0066] Example 4

[0067] See also Figure 8 It should be noted that the difference between Example 4 and Example 1 is that: a dielectric membrane is provided, and a first inner electrode layer and a second inner electrode layer are provided on the dielectric membrane at intervals, including:

[0068] At least two printing screens 100 and at least two dielectric films 200 are provided. One printing screen 100 includes at least one first graphic area 110 and a second graphic area 120. The length and width of the printing screen 100 provided with the first graphic area 110 are both 150 mm. Another printing screen 100 includes at least one second graphic area 120. The length and width of the other printing screen 100 provided with the second graphic area 120 are both 150 mm. At least two first internal electrode patterns 130 are provided on each first graphic area 110, and at least two second internal electrode patterns are provided on each second graphic area 120. Then, the first internal electrode pattern 130 is printed on a dielectric film 200 by the printing screen 100 provided with the first graphic area 110, and the second internal electrode pattern 140 is printed on the other dielectric film 200 by the printing screen 100 provided with the second graphic area 120, so as to form a first internal electrode layer 300 and a second internal electrode layer 400 respectively.

[0069] The dielectric diaphragm provided with the first inner electrode layer is stacked on the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product, comprising:

[0070] A three-axis laminating machine with a length and width of 150 mm is used to stack the dielectric film 200 with the first inner electrode layer 300 on the dielectric film 200 with the second inner electrode layer 400 to form a laminated semi-finished product 500 with a length and width of 150 mm. Others are the same as in Example 1 and will not be repeated here.

[0071] Example 5

[0072] Please continue reading Figure 8 It should be noted that the difference between Example 5 and Example 4 is that the length and width of the printing screen 100 provided with the first graphic area 110 are both 310 mm, and the length and width of the printing screen 100 provided with the second graphic area 120 are both 310 mm.

[0073] The dielectric diaphragm provided with the first inner electrode layer is stacked on the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product, comprising:

[0074] A three-axis laminating machine with a length and width of 310 mm is used to stack the dielectric film 200 with the first inner electrode layer 300 on the dielectric film 200 with the second inner electrode layer 400 to form a laminated semi-finished product 500 with a length and width of 310 mm. Others are the same as in Example 4 and will not be repeated here.

[0075] The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structural or equivalent process transformations made using the contents of the specification and drawings of the present application, such as the mutual combination of technical features between the embodiments, or direct or indirect application in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for preparing a chip-type three-terminal capacitive filter, characterized in that: include: A printing screen and at least one dielectric film are provided, wherein the printing screen comprises a first graphic region and a second graphic region which are adjacently arranged and have the same area, wherein at least two first inner electrode patterns which are arranged at intervals are arranged on the first graphic region, and at least two second inner electrode patterns which are arranged at intervals are arranged on the second graphic region; The first inner electrode pattern and the second inner electrode pattern are both printed on the dielectric diaphragm by the printing screen to form a first inner electrode layer and a second inner electrode layer respectively; the length and width of the printing screen provided with the first graphic area and the second graphic area are 310 mm and 150 mm respectively, or the length and width of the printing screen provided with the first graphic area and the second graphic area are 640 mm and 310 mm respectively, or the length and width of the printing screen provided with the first graphic area and the second graphic area are both 310 mm; or, Two printing screens and at least two dielectric films are provided, one of the printing screens includes at least one first graphic area, each of the first graphic areas is provided with at least two first inner electrode patterns spaced apart from each other, and the other printing screen includes at least one second graphic area, each of the first graphic area and one of the second graphic areas have the same area, each of the second graphic areas is provided with at least two second inner electrode patterns spaced apart from each other; The first inner electrode pattern is printed on one dielectric diaphragm by one of the printing screens provided with the first graphic area, and the second inner electrode pattern is printed on another dielectric diaphragm by another of the printing screens provided with the second graphic area, so as to form a first inner electrode layer and a second inner electrode layer respectively; the length and width of the printing screen provided with the first graphic area are both 150 mm, and the length and width of the printing screen provided with the second graphic area are both 150 mm, or the length and width of the printing screen provided with the first graphic area are both 310 mm, and the length and width of the printing screen provided with the second graphic area are both 310 mm; The dielectric diaphragm provided with the first inner electrode layer is the first region, and the dielectric diaphragm provided with the second inner electrode layer is the second region. The number of the first inner electrode layer and the second inner electrode layer is at least two and they are arranged at intervals. The first region and the second region have the same area. The distance between every two adjacent first inner electrode layers is equal to the distance between every two adjacent second inner electrode layers, and the spacing between every two adjacent second inner electrode layers is equal. The dielectric diaphragm provided with the first inner electrode layer is stacked on the dielectric diaphragm provided with the second inner electrode layer to form a stacked semi-finished product, wherein in a direction from the first inner electrode layer toward the second inner electrode layer, an orthographic projection of the first inner electrode layer and an orthographic projection of the adjacent second inner electrode layer stacked below the first inner electrode layer are arranged at an interval; The laminated semi-finished product is subjected to water pressure and cutting treatment to form a chip-type three-terminal capacitive filter.

2. The method for preparing a chip-type three-terminal capacitive filter according to claim 1, characterized in that: When the length and width of the printing screen provided with the first graphic area and the second graphic area are 310 mm and 150 mm respectively; The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises: A laminating machine with a length and width of 150 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

3. The method for preparing a chip-type three-terminal capacitive filter according to claim 1, characterized in that: When the length and width of the printing screen provided with the first graphic area and the second graphic area are 640 mm and 310 mm respectively; The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises: A laminating machine with a length and width of 310 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

4. The method for preparing a chip-type three-terminal capacitive filter according to claim 1, characterized in that: When the length and width of the printing screen provided with the first graphic area and the second graphic area are both 310 mm; The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises: A laminating machine with a length and width of 150 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

5. The method for preparing a chip-type three-terminal capacitive filter according to claim 1, characterized in that: When the length and width of the printing screen provided with the first graphic area are both 150 mm, and the length and width of the printing screen provided with the second graphic area are both 150 mm; The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises: A three-axis laminating machine with a length and width of 150 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

6. The method for preparing a chip-type three-terminal capacitive filter according to claim 1, characterized in that: When the length and width of the printing screen provided with the first graphic area are both 310 mm, and the length and width of the printing screen provided with the second graphic area are both 310 mm; The step of stacking the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product comprises: A three-axis laminating machine with a length and width of 310 mm is used to stack the dielectric diaphragm provided with the first inner electrode layer onto the dielectric diaphragm provided with the second inner electrode layer to form a laminated semi-finished product.

7. The method for preparing a chip-type three-terminal capacitive filter according to claim 1, characterized in that: The intervals between any two adjacent first inner electrode layers are equal.

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