Thin-line single crystal silicon wafer cutting method and device

Abstract

The present invention belongs to the technical field of silicon wafer processing, and in particular, relates to a thin-line single crystal silicon wafer cutting method and device, comprising the following steps: S1. fixing two ends of single crystal silicon on a workbench, the single crystal silicon is located below five groups of cutting lines, and the five groups of cutting lines are controlled to rotate by a motor 1 and a rotating shaft 1; S2. slowly moving the single crystal silicon upwards by raising the workbench, and the rotating five groups of cutting lines all cut the single crystal silicon, and the four cut single crystal silicon wafers are clamped by a clamping component; S3. after the five groups of cutting lines have completed cutting the single crystal silicon, the remaining single crystal silicon follows the workbench to descend to the initial position, the single crystal silicon wafer in the clamping component is taken out, and the five groups of cutting lines cut the single crystal silicon at the same time, and four single crystal silicon wafers can be cut out at one time by the five groups of cutting lines, with high cutting efficiency, and at the same time the clamping component clamps the single crystal silicon to prevent the single crystal silicon wafer from tilting or tipping over during cutting, resulting in uneven cutting of the single crystal silicon wafer or damage caused by secondary cutting.

Description

Technical Field

[0001] This invention belongs to the field of silicon wafer processing technology, and particularly relates to a method and apparatus for cutting fine-line monocrystalline silicon wafers. Background Technology

[0002] Monocrystalline silicon, as a relatively reactive non-metallic element crystal, is an important component of crystal materials and is at the forefront of new material development. Its main uses are as a semiconductor material and for solar photovoltaic power generation and heating. Most existing cutting methods are single-wire cutting, which has low cutting efficiency.

[0003] For example, patent application number CN202211109986.7 describes a method for cutting and preparing single-crystal silicon wafers, which includes the following steps: S1: Material selection: Selecting a prepared single-crystal silicon rod as raw material, and cutting the end of the single-crystal silicon rod with a cutting machine to make the single-crystal silicon rod meet production requirements; S2: Grinding: Grinding the surface of the single-crystal silicon rod in S1 with a CNC lathe. However, the disadvantage of this technical solution is that it is single-line cutting, and the cutting efficiency is low. Summary of the Invention

[0004] The purpose of this invention is to provide a method and apparatus for cutting single-crystal silicon wafers into finer lines, so as to solve the problems in the prior art. The specific technical solution is as follows:

[0005] A method for cutting single-crystal silicon wafers into finer lines includes the following steps:

[0006] S1. Fix both ends of the monocrystalline silicon on the worktable. The monocrystalline silicon is located below the five sets of cutting lines. Control the rotation of the five sets of cutting lines through motor one and rotating shaft one.

[0007] S2. The monocrystalline silicon is slowly moved upward by the rising worktable, and the five sets of rotating cutting lines cut the monocrystalline silicon. The four cut monocrystalline silicon wafers are clamped by the clamping components.

[0008] S3. After the five sets of cutting lines have finished cutting the monocrystalline silicon, the remaining monocrystalline silicon follows the worktable down to the initial position and is removed from the clamping component.

[0009] Furthermore, in step S1, the tension of the five sets of cutting lines is adjusted by adjusting the adjusting component.

[0010] Furthermore, in step S2, coolant is sprayed at the contact point between the cutting line and the monocrystalline silicon.

[0011] Furthermore, in step S3, the remaining monocrystalline silicon is moved below the five sets of cutting lines and fixed on the worktable, where it is cut into monocrystalline silicon wafers again.

[0012] Furthermore, a fine-wire single-crystal silicon wafer cutting device is used to cut single-crystal silicon wafers according to any of the above-described fine-wire single-crystal silicon wafer cutting methods. It includes a housing and a cutting wire. Four rotating shaft supports are slidably connected to both sides of the housing. A spring is provided between the rotating shaft supports and the housing. The rotating shaft supports are fixed to a motor. The output end of the motor is connected to the rotating shaft. The rotating shaft is rotatably connected to the rotating shaft supports and slidably connected to a rotating wheel. The rotating wheel is rotatably connected to a support assembly. An adjustment component is installed on the support assembly. A clamping component is installed inside the housing. The cutting wire is wrapped around the four rotating wheels and the adjustment component.

[0013] Furthermore, the rotating shaft is composed of multiple short shafts connected together. The output end of the motor is connected to the end of the short shaft. The rotating wheel slides on the short shaft. Two crossbars are fixed inside the outer casing. A cylinder is fixed on the outer casing. The output end of the cylinder is connected to the first bracket.

[0014] Furthermore, the support assembly includes a first support, a second support, a third support, a fourth support, and a fifth support. A hinged column one is fixed on the first support. The hinged column one is rotatably connected to one end of a rotating rod one. The other end of the rotating rod one is hinged to the rotating rod two via a hinged column two. The middle part of the rotating rod two rotates on a hinged column three. The rotating rod two is hinged to the rotating rod three. The rotating rod three rotates on a hinged column four. The rotating rod three is hinged to the rotating rod four. The middle part of the rotating rod four rotates on a hinged column five. The rotating rod four is hinged to the rotating rod five. The rotating rod five is rotatably connected to a hinged column six. The hinged column three is fixed on the second support. The hinged column four is fixed on the third support. The hinged column five is fixed on the fourth support. The hinged column six is ​​fixed on the fifth support. The hinged columns one, three, five, and six are all slidably connected to the crossbar. The hinged column four is fixed on the crossbar.

[0015] Furthermore, the clamping component includes four sets of vertical rods, all of which are slidably connected to the horizontal rod. The second hinged column is slidably connected to the vertical rod. A push rod is slidably connected inside the vertical rod, and an outer tube is slidably connected to the outside of the vertical rod. One end of the push rod is fixed inside a spring. A spring is provided outside the push rod. One end of the spring is fixed to the vertical rod, and the other end of the spring is fixed to the outer tube. The outer tube is slidably connected to an elastic clamping plate. The elastic clamping plate is fixedly connected to one end of a second spring, and the other end of the second spring is fixed inside the outer tube. The push rod slides inside the second push rod. The two second push rods rotate at both ends of the connecting rod. The middle of the connecting rod is rotatably connected to a third push rod. Both third push rods mesh with a gear. The gear is rotatably connected to a gear bracket. The gear bracket is connected to the output end of a second cylinder. The second cylinder is fixed to the outer shell.

[0016] Furthermore, the first bracket, the second bracket, the third bracket, the fourth bracket, and the fifth bracket are all composed of the first bracket and the left bracket. The left bracket and the right bracket are slidably connected. The lower ends of the left bracket and the right bracket are provided with pulleys. The output end of the cylinder is connected to the left bracket, and the adjusting component is installed on the left bracket.

[0017] Furthermore, the adjusting component includes a second motor, which is fixed to the outer casing. The output end of the second motor is connected to a first rotating shaft support rod. The first rotating shaft support rod is connected to one end of the second rotating shaft, and the other end of the second rotating shaft is connected to the second rotating shaft support rod. The second rotating shaft support rod rotates on the outer casing. The second rotating shaft is composed of multiple short shafts connected together. The short shafts are rotatably connected to a rotating shaft bracket, which is fixed to the left bracket. A second gear is fixed on the short shafts. The second gear meshes with a gear in the rotating wheel bracket. The rotating wheel bracket is slidably connected to the rotating shaft bracket. A slide is slidably mounted inside the rotating wheel bracket. One end of the slide is fixedly connected to a fourth spring, and the other end of the fourth spring is fixed to the rotating wheel bracket. The slide is rotatably connected to the second rotating wheel, and the cutting wire is wound around the second rotating wheel.

[0018] The advantages of this invention are:

[0019] 1. Five sets of cutting lines cut monocrystalline silicon simultaneously, and four monocrystalline silicon wafers can be cut at once through the five sets of cutting lines. The cutting efficiency is high. At the same time, the clamping component clamps the monocrystalline silicon wafer to prevent it from tilting or falling over during cutting, which would cause uneven cutting or damage during secondary cutting.

[0020] 2. The distance between the cutting lines can be changed, thereby changing the thickness of the cut monocrystalline silicon wafer. The five sets of cutting lines are arranged at equal intervals. After adjustment, the distance between the cutting lines can be increased or decreased at equal intervals. While changing the thickness of the cut monocrystalline silicon wafer, the uniformity of the cutting is ensured.

[0021] 3. It has a buffer function to prevent large-diameter monocrystalline silicon from accidentally entering the device and damaging the parts inside. Attached Figure Description

[0022] Figure 1 This is a flowchart of the single-crystal silicon wafer cutting process of the present invention;

[0023] Figure 2 This is a schematic diagram of the overall structure of the present invention. Figure 1 ;

[0024] Figure 3 This is a schematic diagram of the overall structure of the present invention. Figure 2 ;

[0025] Figure 4 This is a schematic diagram of the overall structure of the present invention. Figure 3 ;

[0026] Figure 5 This is a schematic diagram of the overall structure of the present invention. Figure 4 ;

[0027] Figure 6 This is a schematic diagram of the overall structure of the present invention. Figure 5 ;

[0028] Figure 7 This is a schematic diagram of the overall structure of the present invention. Figure 6 ;

[0029] Figure 8 This is a schematic diagram of the overall structure of the present invention. Figure 7 ;

[0030] Figure 9 This is a schematic diagram of the overall structure of the present invention. Figure 8 ;

[0031] Figure 10 This is a schematic diagram of the overall structure of the present invention. Figure 9 ;

[0032] Figure 11 This is a schematic diagram of the overall structure of the present invention. Figure 10 ;

[0033] Explanation of markings in the diagram:

[0034] 1. Outer casing; 2. Motor 1; 3. Short shaft 1; 4. Rotating wheel; 5. First bracket; 501. Left bracket; 502. Right bracket; 6. Second bracket; 7. Third bracket; 8. Fourth bracket; 9. Fifth bracket; 10. Cutting line; 11. Cylinder 1; 12. Horizontal bar; 13. Hinge post 1; 14. Rotating rod 1; 15. Hinge post 2; 16. Vertical bar; 17. Hinge post 3; 18. Rotating rod 2; 19. Hinge post 4; 20. Rotating rod 3; 21. Rotating rod 4; 22. Hinge post 5; 23. Rotating rod 5; 24. Hinge Column 6; 25. Push rod 1; 26. Spring 1; 27. Outer tube; 28. Spring 2; 29. ​​Elastic clamp; 30. Push rod 2; 31. Connecting rod; 32. Push rod 3; 33. Gear 1; 34. Gear bracket; 35. Cylinder 2; 36. Rotating shaft bracket; 37. Spring 3; 38. Motor 2; 39. Short shaft 2; 40. Gear 2; 41. Rotating shaft bracket; 42. Rotating wheel bracket; 43. Slide; 44. Spring 4; 45. Rotating wheel 2; 46. Pulley; 47. Rotating shaft support rod 1; 48. Rotating shaft support rod 2. Detailed Implementation

[0035] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0036] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0037] Example 1

[0038] like Figure 1-11 As shown, the method for cutting thinner single-crystal silicon wafers includes the following steps:

[0039] S1. Fix both ends of the monocrystalline silicon on the worktable. The monocrystalline silicon is located below the five sets of cutting lines 10. Control the rotation of the five sets of cutting lines 10 through motor 2 and rotating shaft 1.

[0040] S2. The monocrystalline silicon is slowly moved upward by the rising worktable, and the five sets of rotating cutting lines 10 cut the monocrystalline silicon. The four cut monocrystalline silicon wafers are clamped by the clamping components.

[0041] S3. After the five sets of cutting lines 10 have finished cutting the monocrystalline silicon, the remaining monocrystalline silicon follows the worktable down to the initial position and is taken out of the clamping component;

[0042] The working principle of the above technical solution is as follows: The two ends of the monocrystalline silicon are fixed on the worktable. The monocrystalline silicon is located below the five sets of cutting lines 10. The motor 2 is started, which drives the rotating shaft 1 to rotate. The five sets of cutting lines 10 rotate on the four rotating shafts 1. As the monocrystalline silicon slowly moves upward, the five sets of cutting lines 10 cut the monocrystalline silicon. Two adjacent cutting lines 10 cut the monocrystalline silicon into monocrystalline silicon wafers. As the monocrystalline silicon moves upward, the clamping component clamps the cut monocrystalline silicon wafers. The five sets of cutting lines 10 cut the monocrystalline silicon at the same time. Four monocrystalline silicon wafers can be cut from the five sets of cutting lines 10 at one time. The cutting efficiency is high. At the same time, the clamping component clamps the monocrystalline silicon to prevent the monocrystalline silicon wafers from tilting or falling over during cutting, which would cause uneven cutting or damage during secondary cutting.

[0043] Cutting wire 10 is a diamond wire saw, with the middle wire body being a molybdenum wire or tungsten wire, and the surface of the middle wire body being coated with a layer of diamond grit.

[0044] Example 2

[0045] like Figure 1-11 As shown, in step S1, the tension of the five sets of cutting lines 10 is adjusted by adjusting the adjusting component;

[0046] The working principle of the above technical solution is as follows: the cutting wire 10 can be adjusted to a relaxed state by adjusting the component, and then the cutting wire 10 can be removed for cleaning or replacement.

[0047] Example 3

[0048] like Figure 1-11 As shown, in step S2, coolant is sprayed at the contact point between the cutting line 10 and the monocrystalline silicon;

[0049] The working principle of the above technical solution is as follows: the coolant can cool the cutting line 10 and the monocrystalline silicon, and at the same time wash away the debris generated during the cutting of the monocrystalline silicon.

[0050] Example 4

[0051] like Figure 1-11 As shown, in step S3, the remaining monocrystalline silicon is moved below the five sets of cutting lines 10 and fixed on the worktable, and then cut into monocrystalline silicon wafers again.

[0052] The working principle of the above technical solution is: four monocrystalline silicon wafers can be cut at a time until all monocrystalline silicon wafers are cut.

[0053] Example 5

[0054] like Figure 1-11 As shown, a fine-wire single-crystal silicon wafer cutting device is used to cut single-crystal silicon wafers according to any of the above-described fine-wire single-crystal silicon wafer cutting methods. It includes a housing 1 and a cutting wire 10. Four rotating shaft supports 36 are slidably connected to both sides of the housing 1. A spring 37 is provided between the rotating shaft support 36 and the housing 1. The rotating shaft support 36 is fixed to a motor 2. The output end of the motor 2 is connected to a rotating shaft. The rotating shaft is rotatably connected to the rotating shaft support 36. The rotating shaft is slidably connected to a rotating wheel 4. The rotating wheel 4 is rotatably connected to a support group. An adjustment component is installed on the support group. A clamping component is installed inside the housing 1. The cutting wire 10 is wrapped around the four rotating wheels 4 and the adjustment component.

[0055] The working principle of the above technical solution is as follows: Starting motor 2 drives rotating shaft 1 to rotate, which in turn drives rotating wheel 4 to rotate, which in turn drives five sets of cutting wires 10 to rotate, which in turn drives three other rotating shafts 1 to rotate, moving the monocrystalline silicon from the bottom of the outer shell 1 upwards. The five sets of rapidly rotating cutting wires 10 slice the monocrystalline silicon. The clamping component holds the monocrystalline silicon wafer to prevent it from tipping over. The adjusting component can adjust the tension of the five sets of cutting wires 10. Four monocrystalline silicon wafers can be cut at once through the five sets of cutting wires 10, resulting in high cutting efficiency.

[0056] Example 6

[0057] like Figure 1-11As shown, the rotating shaft is composed of multiple short shafts 3 connected together. The output end of the motor 2 is connected to the end of the short shaft 3. The rotating wheel 4 slides on the short shaft 3. Two crossbars 12 are fixed inside the outer shell 1. A cylinder 11 is fixed on the outer shell 1. The output end of the cylinder 11 is connected to the first bracket 5.

[0058] The support assembly includes a first support 5, a second support 6, a third support 7, a fourth support 8, and a fifth support 9. A hinge post 13 is fixed to the first support 5. The hinge post 13 is rotatably connected to one end of a rotating rod 14. The other end of the rotating rod 14 is hinged to a rotating rod 18 via a hinge post 25. The middle of the rotating rod 18 rotates on a hinge post 37. The rotating rod 18 is hinged to a rotating rod 20. The rotating rod 20 rotates on a hinge post 49. The rotating rod 20 is hinged to a rotating rod 41. The middle part of rod 4 21 rotates on hinge post 5 22. Rotating rod 4 21 is hinged to rotating rod 5 23. Rotating rod 5 23 is rotatably connected to hinge post 6 24. Hinged post 3 17 is fixed on the second bracket 6. Hinged post 4 19 is fixed on the third bracket 7. Hinged post 5 22 is fixed on the fourth bracket 8. Hinged post 6 24 is fixed on the fifth bracket 9. Hinged post 1 13, hinged post 3 17, hinged post 5 22, and hinged post 6 24 are all slidably connected to crossbar 12. Hinged post 4 19 is fixed on crossbar 12.

[0059] The working principle of the above technical solution is as follows: Starting cylinder 11 pushes the first bracket 5 to move, which in turn drives the rotating wheel 4 to slide on the rotating shaft 1, causing the hinge pin 13 to slide within the crossbar 12, thus rotating the two rotating rods 14. Through the two hinge pins 15, the two rotating rods 18 rotate, causing the hinge pin 17 to slide within the crossbar 12, thus moving the second bracket 6. The rotation of the two rotating rods 18 causes the two rotating rods 20 to rotate. Since the hinge pin 19 is fixed on the crossbar 12, the position of the third bracket 7 remains fixed. The rotation of the two rotating rods 20 causes the two rotating rods 21 to rotate, thus moving the hinge pin 14. 22 slides within the crossbar 12, causing the fourth support 8 to move. The two rotating rods 21 rotate, causing the two rotating rods 23 to rotate, causing the hinge column 24 to slide within the crossbar 12, causing the fifth support 9 to move. This adjusts the distance between the first support 5, the second support 6, the third support 7, the fourth support 8, and the fifth support 9, thereby changing the distance between the cutting lines 10 and thus changing the thickness of the cut monocrystalline silicon wafer. The five sets of cutting lines 10 are arranged at equal intervals. After adjustment, the distance between the cutting lines 10 can be increased or decreased at equal intervals. While changing the thickness of the cut monocrystalline silicon wafer, the uniformity of the cutting is ensured.

[0060] Example 7

[0061] like Figure 1-11As shown, the clamping component includes four sets of vertical rods 16, all of which are slidably connected to the horizontal rod 12. A hinged column 15 is slidably connected to the vertical rods 16. A push rod 25 is slidably connected inside each vertical rod 16, and an outer tube 27 is slidably connected to the outside of each vertical rod 16. The end of the push rod 25 is fixed inside a spring 26, and a spring 26 is located on the outside of the push rod 25. One end of the spring 26 is fixed to the vertical rod 16, and the other end is fixed to the outer tube 27. The outer tube 27 is slidably connected to the elastic clamping plate 29. The flexible clamp 29 is fixedly connected to one end of the second spring 28, and the other end of the second spring 28 is fixed inside the outer tube 27. The first push rod 25 slides inside the second push rod 30. The two second push rods 30 rotate at both ends of the connecting rod 31. The middle part of the connecting rod 31 is rotatably connected to the third push rod 32. Both third push rods 32 mesh with the first gear 33 for transmission. The first gear 33 is rotatably connected to the gear bracket 34. The gear bracket 34 is connected to the output end of the second cylinder 35. The second cylinder 35 is fixed on the outer shell 1.

[0062] The working principle of the above technical solution is as follows: When rotating rod 14 and rotating rod 18 rotate, they drive hinge column 15 to slide upward or downward within the vertical rod 16, and simultaneously drive the vertical rod 16 to slide on the horizontal rod 12. Since hinge column 15 is always positioned between the first support 5 and the second support 6, the vertical rod 16 is always maintained in the middle position between the first support 5 and the second support 6, so that the elastic clamping plate 29 is always maintained between the two sets of cutting line 10 supports. Therefore, no matter how the thickness of the single crystal silicon wafer being cut is changed, the elastic clamping plate 29 can always be clamped in the middle position of the single crystal silicon wafer. The starting cylinder 35 drives the gear support 34 to move forward. This causes gear 1 (33) to move forward, which in turn moves two push rods (32) and two connecting rods (31) forward, and four push rods (30) to move forward. This pushes push rod 1 (25) forward, causing the outer tube (27) to move forward, stretching spring 1 (26), and causing spring 2 (28) and elastic clamping plate 29 to move forward, thus reducing the clamping width. This adjustment can accommodate monocrystalline silicon wafers of different thicknesses. After being cut by cutting line 10, the monocrystalline silicon wafer continues to move upward. The arc surface at the lower end of elastic clamping plate 29 abuts against the middle of the monocrystalline silicon wafer. The monocrystalline silicon wafer continues to move upward, squeezing elastic clamping plate 29 backward, causing spring 2 (28) to be compressed. Under the action of the restoring elastic force, the elastic clamp 29 is pressed tightly against the monocrystalline silicon wafer to prevent the wafer from tipping over. The cutting line 10 makes a secondary cut, which damages the monocrystalline silicon wafer. When encountering monocrystalline silicon wafers of uneven thickness, the diameter of the cut wafers will also be inconsistent. The four elastic clamps 29 are set as the first clamp, the second clamp, the third clamp, and the fourth clamp in sequence. If the monocrystalline silicon wafer clamped by the first and second clamps is wider than the wafer clamped by the third and fourth clamps, the first and second clamps are pressed backward, causing the corresponding outer tubes 27 and push rods 25 to move backward. Push rod 2 30, connecting rod 31 and push rod 32 on one side move backward, driving gear 1 33 to rotate. Cylinder 2 35 follows the adjustment. Gear 1 33 meshes with push rod 3 32 on the other side to complete the adjustment. When the size of the monocrystalline silicon wafers clamped by the first clamping plate and the second clamping plate is inconsistent, or the size of the monocrystalline silicon wafers clamped by the third clamping plate and the fourth clamping plate is inconsistent, the two adjacent push rods 2 30 are not in the same horizontal position, causing the connecting rod 31 and push rod 3 32 to rotate. As a result, the four elastic clamping plates 29 can be not aligned front to back and tightly attached to the monocrystalline silicon wafer, adapting to the cutting of monocrystalline silicon with uneven thickness and tightening the monocrystalline silicon wafer.

[0063] Example 8

[0064] like Figure 1-11As shown, the first bracket 5, the second bracket 6, the third bracket 7, the fourth bracket 8 and the fifth bracket 9 are all composed of the first bracket 5 and the left bracket 501. The left bracket 501 and the right bracket 502 are slidably connected. The lower ends of the left bracket 501 and the right bracket 502 are provided with pulleys 46. The output end of the cylinder 11 is connected to the left bracket 501. The adjusting component is installed on the left bracket 501.

[0065] The adjusting component includes a second motor 38, which is fixed on the outer casing 1. The output end of the second motor 38 is connected to a first rotating shaft support rod 47. The first rotating shaft support rod 47 is connected to one end of the second rotating shaft, and the other end of the second rotating shaft is connected to the second rotating shaft support rod 48. The second rotating shaft support rod 48 rotates on the outer casing 1. The second rotating shaft is composed of multiple short shafts 39 inserted together. The short shafts 39 are rotatably connected to a rotating shaft bracket 41. The rotating shaft bracket 41 is fixed on the left bracket 501. A second gear 40 is fixed on the short shafts 39. The second gear 40 meshes with a rotating wheel bracket 42 for transmission. The rotating wheel bracket 42 is slidably connected to the rotating shaft bracket 41. A slide 43 slides inside the rotating wheel bracket 42. The slide 43 is fixedly connected to one end of a fourth spring 44. The other end of the fourth spring 44 is fixed to the rotating wheel bracket 42. The slide 43 is rotatably connected to a second rotating wheel 45. The cutting wire 10 is wound around the second rotating wheel 45.

[0066] The working principle of the above technical solution is as follows: When the size of the monocrystalline silicon is larger than the width between the left support 501 and the right support 502, the monocrystalline silicon will move upward and press against the pulley 46, causing the left support 501 and the right support 502 to move to both ends. This causes the cutting wire 10 to squeeze the slide 43 and the rotating wheel 45 downward, which in turn compresses the spring 44. This buffers the left support 501, the right support 502 and the cutting wire 10, preventing the monocrystalline silicon with an excessive diameter from accidentally entering the device and damaging the parts inside.

[0067] The start motor 38 drives the rotating shaft 2, composed of multiple short shafts 39 connected together, to rotate. This rotates the gear 40, causing the rotating wheel bracket 42 to rise or fall, which in turn causes the slide 43 and spring 44 to rise or fall, and the rotating wheel 45 to rise or fall, thereby changing the tension of the cutting wire 10. When the distance between the first bracket 5, the second bracket 6, the third bracket 7, the fourth bracket 8, and the fifth bracket 9 changes, the rotating shaft bracket 41 drives the short shafts 39 to move, causing adjacent short shafts 39 to slide together. When the cutting wire 10 needs to be replaced, the start motor 38 drives the gear 40 to rotate, causing the rotating wheel 45 to rise or fall. The wheel bracket 42 descends, causing the slide 43, spring 44, and rotating wheel 45 to descend as well. This relaxes the cutting wire 10, separating the two adjacent short shafts 39 and 3, allowing the cutting wire 10 to be removed. The new cutting wire 10 is then fitted onto the four rotating wheels 4 and rotating wheel 45. The two adjacent short shafts 39 and 3 are then connected. The motor 38 is restarted, driving the gear 40 to rotate. This raises the wheel bracket 42, which in turn raises the slide 43, spring 44, and rotating wheel 45, putting the cutting wire 10 into a tensioned state, thus completing the replacement of the cutting wire 10.

[0068] It is understood that the present invention has been described through some embodiments, and those skilled in the art will recognize that various changes or equivalent substitutions can be made to these features and embodiments without departing from the spirit and scope of the invention. Furthermore, under the teachings of the present invention, these features and embodiments can be modified to adapt to specific situations and materials without departing from the spirit and scope of the invention. Therefore, the present invention is not limited to the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the protection scope of the present invention.

Claims

1. A method for cutting a single crystal silicon wafer into thin lines, characterized in that: The following steps are involved: S1. Fix both ends of the single crystal silicon on a workbench, the single crystal silicon is located below the five groups of cutting lines (10), and the five groups of cutting lines (10) are rotated by a motor (2) and a rotating shaft; S2. The single crystal silicon is slowly moved upward by the rising workbench, and the five rotating cutting lines (10) are all used to cut the single crystal silicon, and the four cut single crystal silicon wafers are clamped by the clamping member; S3. After the five groups of cutting lines (10) have completed the cutting of the single crystal silicon, the remaining single crystal silicon follows the workbench down to the initial position, and the single crystal silicon wafer in the clamping member is removed; The clamping component comprises four groups of vertical rods (16), the four groups of vertical rods (16) are all slidably connected to the cross rod (12), the vertical rod (16) is slidably connected to the hinge column 2 (15), a push rod 1 (25) is slidably connected inside the vertical rod (16), an outer tube (27) is slidably connected to the outer side of the vertical rod (16), the end of the push rod 1 (25) is fixed inside the spring 1 (26), a spring 1 (26) is arranged outside the push rod 1 (25), one end of the spring 1 (26) is fixed on the vertical rod (16), the other end of the spring 1 (26) is fixed on the outer tube (27), the outer tube (27) is slidably connected to the elastic clamp (29), the elastic clamp (29) is fixedly connected to one end of the spring 2 (28), the other end of the spring 2 (28) is fixed inside the outer tube (27); The push rod 1 (25) slides in the push rod 2 (30), the two push rods 2 (30) rotate at the two ends of the connecting rod (31), the middle part of the connecting rod (31) is rotatably connected to the push rod 3 (32), the two push rods 3 (32) are both meshed with the gear 1 (33) for transmission, the gear 1 (33) is rotatably connected to the gear bracket (34), the gear bracket (34) is connected to the output end of the cylinder 2 (35), and the cylinder 2 (35) is fixed on the housing (1).

2. The method for cutting a thinned single crystal silicon wafer according to claim 1, characterized in that: In step S1, the tightness of the five groups of cutting lines (10) is adjusted by means of an adjusting component.

3. The method for cutting a thinned single crystal silicon wafer according to claim 1, characterized in that: In step S2, a cooling liquid is sprayed at the contact point between the cutting wire (10) and the single crystal silicon.

4. The method for cutting a thinned single crystal silicon wafer according to claim 1, characterized in that: In step S3, the remaining single crystal silicon is moved below the five groups of cutting lines (10) and fixed on a workbench to be cut into single crystal silicon wafers again.

5. A thinning single crystal silicon wafer cutting device, used for cutting single crystal silicon wafers according to the thinning single crystal silicon wafer cutting method according to any one of claims 1 to 4, characterized in that: The invention comprises a shell (1) and a cutting line (10), four rotating shaft brackets (36) are slidably connected to both sides of the shell (1), a spring three (37) is arranged between the rotating shaft bracket (36) and the shell (1), the rotating shaft bracket (36) is fixed to a motor one (2), the output end of the motor one (2) is connected to a rotating shaft one, the rotating shaft one is rotatably connected to the rotating shaft bracket (36), the rotating shaft one is slidably connected to a rotating wheel (4), the rotating wheel (4) is rotatably connected to a bracket group, an adjusting component is arranged on the bracket group, a clamping component is arranged in the shell (1), and the cutting line (10) is wrapped around the four rotating wheels (4) and the adjusting component.

6. The thinning single crystal silicon wafer cutting device according to claim 5, characterized in that: The rotating shaft 1 is composed of a plurality of short shafts 1 (3) connected in a plug-in manner, the output end of the motor 1 (2) is connected to the end of the short shaft 1 (3), the rotating wheel (4) slides on the short shaft 1 (3), two cross bars (12) are fixed in the outer shell (1), a cylinder 1 (11) is fixed on the outer shell (1), and the output end of the cylinder 1 (11) is connected to the first bracket (5).

7. The thinning single crystal silicon wafer cutting device according to claim 6, characterized in that: The bracket group comprises a first bracket (5), a second bracket (6), a third bracket (7), a fourth bracket (8) and a fifth bracket (9), wherein a hinged column (13) is fixed on the first bracket (5), the hinged column (13) is rotatably connected to one end of a rotating rod (14), the other end of the rotating rod (14) is hingedly connected to a rotating rod (18) through a hinged column (15), the middle part of the rotating rod (18) is rotated on a hinged column (17), the rotating rod (18) is hingedly connected to a rotating rod (20), the rotating rod (20) is rotated on a hinged column (19), the rotating rod (20) is hingedly connected to a rotating rod (21), and the rotating rod (21) is hingedly connected to the rotating rod (22). The middle part of the fourth (21) is rotated on the hinged column five (22), the rotating rod four (21) is hingedly connected with the rotating rod five (23), the rotating rod five (23) is rotatably connected with the hinged column six (24), the hinged column three (17) is fixed on the second bracket (6), the hinged column four (19) is fixed on the third bracket (7), the hinged column five (22) is fixed on the fourth bracket (8), the hinged column six (24) is fixed on the fifth bracket (9), the hinged column one (13), the hinged column three (17), the hinged column five (22), and the hinged column six (24) are all slidably connected with the cross bar (12), and the hinged column four (19) is fixed on the cross bar (12).

8. The thinning single crystal silicon wafer cutting device according to claim 7, characterized in that: The first bracket (5), the second bracket (6), the third bracket (7), the fourth bracket (8) and the fifth bracket (9) are all composed of the first bracket (5) and the left bracket (501); the left bracket (501) is slidably connected to the right bracket (502); pulleys (46) are provided at the lower ends of the left bracket (501) and the right bracket (502); the output end of the cylinder 1 (11) is connected to the left bracket (501); and the adjusting component is installed on the left bracket (501).

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