Silicon carbide vapor phase epitaxial chamber

Abstract

The invention discloses a silicon carbide vapor phase epitaxial chamber, relates to the field of semiconductor technology, and aims to solve the technical problem that the epitaxial growth effect is poor due to the attachment of particulate matter to the inner wall of the silicon carbide vapor phase epitaxial chamber. The invention comprises a vapor phase base. The invention provides a sliding mechanism on the vapor phase base, an epitaxial growth mechanism on the sliding mechanism, and the epitaxial growth mechanism is provided as a spiral first reaction shell and a second reaction shell, so that the shell is combined with the sliding mechanism through the engagement and disengagement mechanism to form a cylindrical growth chamber for the silicon carbide epitaxial growth state, and the two reaction shells separated by rotation form the inner wall cleaning state of the growth chamber. The invention adopts the spiral separation design, and the growth chamber can be easily split into two parts, so that the cleaning work of the inner wall becomes simple and quick, and the influence of the particulate matter impurities attached to the inner wall on the epitaxial layer growth process is reduced, thereby improving the purity and quality of the epitaxial layer, while reducing the cleaning difficulty and improving the efficiency of equipment maintenance.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and more particularly to a silicon carbide vapor phase epitaxial chamber. Background Art

[0002] In the industrial application of silicon carbide (SiC) epitaxial technology, the vapor phase epitaxial chamber is one of the core equipment, and its internal environment has a decisive influence on the growth quality of the epitaxial layer. However, in the actual production process, a common and non-negligible problem is the small black amorphous carbon particles or other dust particles falling on the inner wall of the epitaxial chamber. These particles will inevitably fall on the substrate or epitaxial layer surface, causing serious impact on the growth quality of the SiC epitaxial layer.

[0003] The existing silicon carbide vapor phase epitaxial chamber, such as the Chinese invention with publication number CN115613131B, discloses a silicon carbide vapor phase epitaxial chamber. During the SiC epitaxial reaction process, the high temperature and specific gas environment make it possible for the carbon elements and other impurities on the inner wall of the epitaxial chamber to form small black amorphous carbon particles or other dust particles. These particles will fall off from the outer wall of the epitaxial chamber due to gravity, airflow or other factors, and then adhere to the surface of the substrate or epitaxial layer. The particles attached to the surface of the substrate or epitaxial layer will not only affect the surface morphology of the epitaxial layer, resulting in an increase in surface roughness, but may also introduce impurities and defects, thereby seriously affecting the quality and device performance of the SiC epitaxial layer. Especially for some high-end SiC power devices, such as bipolar devices and IGBTs, this effect is more significant. Based on the above phenomenon and reasons, it is particularly important to regularly clean the inner wall components of the silicon carbide vapor phase epitaxial chamber. In view of this, we propose a silicon carbide vapor phase epitaxial chamber. Summary of the invention

[0004] The object of the present invention is to provide a silicon carbide vapor phase epitaxial chamber to solve the technical problem that particles attached to the inner wall of the silicon carbide vapor phase epitaxial chamber lead to poor epitaxial growth effect.

[0005] In order to solve the above technical problems, the present invention provides the following technical solutions: a silicon carbide vapor phase epitaxial chamber, comprising a vapor phase base, a sliding mechanism is provided on the vapor phase base, an epitaxial growth mechanism is provided on the sliding mechanism, a closing and closing mechanism is provided at the bottom end of the epitaxial growth mechanism on the vapor phase base, an expansion material is arranged inside the epitaxial growth mechanism, and a plurality of sealing mechanisms are also arranged inside the expansion material;

[0006] The epitaxial growth mechanism comprises a first reaction shell, a second reaction shell, a rotation-assisting component, a sealing chamber and a growth chamber, wherein the first reaction shell is arranged at one end of the sliding mechanism, the second reaction shell is arranged at the other end of the sliding mechanism, the first reaction shell is movably connected to the second reaction shell, the sealing chamber is opened on the first reaction shell and the second reaction shell, and the rotation-assisting component, the expansion material and the sealing mechanism are all arranged on the sealing chamber;

[0007] Wherein, the first reaction shell and the second reaction shell are both spiral-shaped, and the inner wall of the first reaction shell and the inner wall of the second reaction shell cooperate to form the cylindrical growth chamber. Preferably,

[0008] Preferably, the sealed cavity includes an expansion cavity and an installation cavity, the expansion cavity is opened on the first reaction shell and the second reaction shell, the installation cavity is symmetrically opened at the first reaction shell and the second reaction shell near the outside of the expansion cavity, the expansion material is arranged on the expansion cavity, the rotation-assisting component is arranged on the installation cavity, and a rotation hole is also opened on the installation cavity;

[0009] The rotation-assisting assembly comprises a ball bearing and a rotating rod. The rotating rod is rotatably arranged on the rotating hole. A plurality of the ball bearings are movably arranged on the installation cavity through the rotating rod.

[0010] Preferably, slideways are symmetrically provided on the top of the gas phase base, the bottom end of the sliding mechanism is movably connected to the slideways, the engaging and disengaging mechanism is arranged between the two slideways, and the top end of the engaging and disengaging mechanism is also connected to the sliding mechanism.

[0011] Preferably, the sliding mechanism includes a sliding assembly and a rotating assembly, a plurality of the sliding assemblies are slidably arranged on the slideway, the rotating assembly is arranged at the top of the sliding assembly, the first reaction shell and the second reaction shell are installed on the rotating assembly, and the engaging and disengaging mechanism is connected to one side of the rotating assembly.

[0012] Preferably, the sliding assembly includes a pulley, a support plate and a support seat, the support plate is arranged on the slideway, the pulley is rotatably connected to the bottom end of the support plate, the support seat is arranged on the support plate, and the rotating assembly is connected to the top end of the support seat.

[0013] Preferably, the rotating assembly includes a centripetal frame, a rotating roller and a rotating ring, the centripetal frame is connected to the top of the support seat in an inclined state, the rotating roller is rotatably connected to the centripetal frame, the rotating ring is rotatably connected to a plurality of the rotating rollers, and the engaging and disengaging mechanism is connected to the rotating roller.

[0014] Preferably, the engaging and disengaging mechanism comprises a cylinder, a push rod, a rotating disk, an engaging and disengaging inner rod and an engaging and disengaging outer rod, the cylinder is arranged between the two slideways, the push rod is connected to the output end of the cylinder, the rotating disk is connected to one of the rotating rollers, the engaging and disengaging outer rod is connected to the other rotating roller, the engaging and disengaging inner rod is connected to one end of the rotating disk away from the rotating roller, and the push rod is movably connected to the rotating disk at one end away from the cylinder;

[0015] Wherein, a rotating rod is provided at one end of the push rod away from the cylinder, a rotating groove is provided on the rotating disk, and the rotating rod is movably connected to the rotating groove.

[0016] Preferably, the end of the inner rod away from the rotating disk is movably inserted on the outer rod;

[0017] A limit rod is provided on the outer wall of the engaging and disengaging inner rod, a curved hole is provided on the outer wall of the engaging and disengaging outer rod, and the limit rod is movably connected to the curved hole.

[0018] Preferably, the sealing mechanism includes a servo motor, a ball screw, a displacement block, a support and contraction assembly, a fixed bearing block and a universal joint. The servo motor is arranged at the end of the expansion chamber, the ball screw is connected to the output end of the servo motor, the displacement block is sleeved on the ball screw, the displacement block is adapted to the ball screw, the fixed bearing block is sleeved on the other end of the ball screw, the support and contraction assembly is connected to the displacement block and the fixed bearing block, the universal joint is arranged on the fixed bearing block, and the inner wall of the universal joint is connected to the end of the ball screw away from the displacement block.

[0019] Preferably, the support assembly includes a first connecting arm, a second connecting arm and a support plate, the first connecting arm is rotatably connected to the displacement block, the second connecting arm is rotatably connected to the fixed bearing block, the support plate is connected to one end of the first connecting arm and the second connecting arm away from the displacement block and the fixed bearing block, and the first connecting arm and the second connecting arm are rotatably connected to the support plate at one end away from the displacement block and the fixed bearing block.

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] 1. The present invention improves the structure of the existing silicon carbide vapor phase epitaxial chamber by arranging a sliding mechanism on the vapor phase base, arranging an epitaxial growth mechanism on the sliding mechanism, and arranging a coupling and separation mechanism at the bottom of the epitaxial growth mechanism, and arranging the epitaxial growth mechanism as a spiral first reaction shell and a second reaction shell, so that the first reaction shell and the second reaction shell are combined through the coupling and separation mechanism and the sliding mechanism to form a cylindrical growth chamber for the silicon carbide epitaxial growth state, and the two separated reaction shells are spun off to form a state of cleaning the inner wall of the growth chamber. The present invention can easily split the growth chamber into two parts through the spiral separation design, so that the cleaning work of the inner wall becomes simple and quick, and the influence of particulate impurities attached to the inner wall on the epitaxial layer growth process is reduced, thereby improving the purity and quality of the epitaxial layer, while reducing the difficulty of cleaning and improving the efficiency of equipment maintenance.

[0022] 2. The present invention provides sealing cavities on both the first reaction shell and the second reaction shell, wherein the sealing cavities are divided into an expansion cavity and an installation cavity. The expansion cavity has a large radius and is spirally provided on the two shells, and is mainly used to place expansion materials and sealing mechanisms. The expansion material in the present invention is a flexible graphite sealing strip, also known as an expanded graphite sealing strip, which is an interlayer compound generated by chemical treatment of scale graphite. The sealing strip can expand to form a sealing layer under the high temperature of the silicon carbide vapor phase epitaxy chamber, and fill the expansion cavity, thereby solving the problem of temperature loss due to sealing in the device of the present invention and further optimizing the quality of the silicon carbide vapor phase epitaxy reaction.

[0023] 3. The present invention arranges a cylinder at a position between the two slideways, and the cylinder stroke pushes the push rod to move, and the push rod pushes the rotating disk to pull the inner rod out of the outer rod, and the limit rod of the inner rod slides on the curved hole of the outer rod, so that the inner rod and the outer rod rotate during the separation process, and the rotation of the inner rod and the outer rod drives the rotating roller to rotate on the centripetal frame, and the rotating roller drives the rotating ring to rotate, and the rotating ring drives the first reaction shell and the second reaction shell to rotate in opposite directions, so that the epitaxial growth shell is separated, and the cleanliness of the inner wall of the cavity is improved. The clean reaction cavity is helpful to maintain a stable growth environment, reduce growth defects caused by impurities, such as micropipes, screw dislocations, etc., and further improve the crystal quality and crystallinity of the silicon carbide epitaxial layer.

[0024] 4. The present invention sets a micro servo motor at the end of the expansion cavity to drive the servo motor to rotate the ball screw, which causes the displacement block to move. The movement of the displacement block drives the first connecting arm and the second connecting arm of the support and contraction assembly to rotate and bend, so that the support and contraction plate can expand or shrink on the inner wall of the expansion material in coordination with the combined use state and the separated cleaning state of the first reaction shell and the second reaction shell, further improving the fit between the expansion material and the cavity, helping to maintain the sealing of the reaction cavity, preventing gas leakage, and ensuring the stability and safety of the epitaxial growth process. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic diagram of the closed use state of the present invention;

[0026] Figure 2 This is a schematic diagram of the separation and cleaning use state of the present invention;

[0027] Figure 3 It is a schematic diagram of the structure of the gas phase base, the sliding mechanism and the engaging and disengaging mechanism of the present invention;

[0028] Figure 4 It is an enlarged view of the structure at A of the present invention;

[0029] Figure 5 It is a schematic diagram of the split structure of the engaging and disengaging mechanism of the present invention;

[0030] Figure 6 It is a schematic diagram of the internal structure of the epitaxial growth mechanism of the present invention;

[0031] Figure 7 It is a schematic diagram of the side view structure of the epitaxial growth mechanism of the present invention;

[0032] Figure 8 It is a schematic diagram of the top view of the epitaxial growth mechanism of the present invention;

[0033] Fig. 9 It is a schematic diagram of the expansion material structure of the present invention;

[0034] Fig.10 It is a cross-sectional view of the expansion material and a schematic diagram of the sealing mechanism structure of the present invention;

[0035] Fig.11 It is a schematic diagram of the cross-section of the expansion material and the connection part of the sealing mechanism of the present invention;

[0036] Fig.12 It is a schematic diagram of the sealing mechanism structure of the present invention;

[0037] Fig.13 It is a schematic diagram of the disassembled structure of the sealing mechanism of the present invention;

[0038] Fig.14It is a schematic diagram of the ball screw and displacement block structure of the present invention;

[0039] Explanation of the reference numerals in the figure: 1. gas phase base; 2. sliding mechanism; 3. epitaxial growth mechanism; 4. closing and closing mechanism; 5. expansion material; 6. sealing mechanism;

[0040] 101. Slideway;

[0041] 201, sliding assembly; 202, rotating assembly;

[0042] 301, first reaction shell; 302, second reaction shell; 303, spin-assisting assembly; 304, sealed chamber; 305, growth chamber;

[0043] 401, cylinder; 402, push rod; 403, rotating disk; 404, inner rod for closing and closing; 405, outer rod for closing and closing;

[0044] 601, servo motor; 602, ball screw; 603, displacement block; 604, support and contraction assembly; 605, fixed bearing block; 606, universal joint;

[0045] 2011, pulley; 2012, support plate; 2013, support seat;

[0046] 2021, centripetal frame; 2022, rotating roller; 2023, rotating ring;

[0047] 3031, ball bearing; 3032, rotating rod;

[0048] 3041, expansion cavity; 3042, installation cavity; 3043, rotation hole;

[0049] 4021, rotating rod; 4031, rotating groove; 4041, limiting rod; 4051, curved hole;

[0050] 6041. First connecting arm; 6042. Second connecting arm; 6043. Supporting plate. DETAILED DESCRIPTION

[0051] like Figures 1 to 14As shown, the present invention relates to a silicon carbide vapor phase epitaxial chamber, comprising a vapor phase base 1, a sliding mechanism 2 is provided on the vapor phase base 1, an epitaxial growth mechanism 3 is provided on the sliding mechanism 2, a closing and unclosing mechanism 4 is provided at the bottom end of the epitaxial growth mechanism 3 on the vapor phase base 1, an expansion material 5 is arranged inside the epitaxial growth mechanism 3, and a plurality of sealing mechanisms 6 are also arranged inside the expansion material 5; the epitaxial growth mechanism 3 comprises a first reaction shell 301, a second reaction shell 302, a rotation assisting assembly 303, a sealing cavity 304 and a growth cavity 305, the first reaction shell 301 is arranged at one end of the sliding mechanism 2, the second reaction shell 302 is arranged at the other end of the sliding mechanism 2, the first reaction shell 301 is movably connected to the second reaction shell 302, the sealing cavity 304 is opened on the first reaction shell 301 and the second reaction shell 302, the rotation-assisting component 303, the expansion material 5 and the sealing mechanism 6 are all arranged on the sealing cavity 304; wherein, the first reaction shell 301 and the second reaction shell 302 are both spiral-shaped, and the inner walls of the first reaction shell 301 and the second reaction shell 302 cooperate to form a cylindrical growth cavity 305. The present invention improves the structure of the existing silicon carbide vapor phase epitaxial chamber, arranges a sliding mechanism 2 on a vapor phase base 1, arranges an epitaxial growth mechanism 3 on the sliding mechanism 2, arranges a coupling and separation mechanism 4 at the bottom of the epitaxial growth mechanism 3, and arranges the epitaxial growth mechanism 3 as a spiral first reaction shell 301 and a second reaction shell 302, so that the first reaction shell 301 and the second reaction shell 302 are combined through the coupling and separation mechanism 4 and the sliding mechanism 2 to form a cylindrical growth chamber 305 for the silicon carbide epitaxial growth state, and the two separated reaction shells are rotated to form a state of cleaning the inner wall of the growth chamber 305. The present invention can easily split the growth chamber 305 into two parts through the spiral separation design, so that the cleaning work of the inner wall becomes simple and quick, and the influence of particulate impurities attached to the inner wall on the epitaxial layer growth process is reduced, thereby improving the purity and quality of the epitaxial layer, while reducing the cleaning difficulty and improving the efficiency of equipment maintenance.

[0052] In an embodiment of the present invention, the sealing cavity 304 includes an expansion cavity 3041 and an installation cavity 3042. The expansion cavity 3041 is opened on the first reaction shell 301 and the second reaction shell 302. The installation cavity 3042 is symmetrically opened on the first reaction shell 301 and the second reaction shell 302 near the outside of the expansion cavity 3041. The expansion material 5 is arranged on the expansion cavity 3041. The rotation-aiding component 303 is arranged on the installation cavity 3042. The installation cavity 3042 is also provided with a rotating hole 3043; the rotation-aiding component 303 includes a ball 3031 and a rotating rod 3032. The rotating rod 3032 is rotatably arranged on the rotating hole 3043. A plurality of ball 3031 are movably arranged on the installation cavity 3042 through the rotating rod 3032. The present invention provides a sealing cavity 304 on both the first reaction shell 301 and the second reaction shell 302, wherein the sealing cavity 304 is divided into an expansion cavity 3041 and an installation cavity 3042. The expansion cavity 3041 has a large radius and is spirally opened on the two shells, and is mainly used to place the expansion material 5 and the sealing mechanism 6. The expansion material 5 in the present invention is a flexible graphite sealing strip, also known as an expanded graphite sealing strip, which is an interlayer compound generated by chemical treatment of scale graphite. The sealing strip can expand to form a sealing layer under the high temperature of the silicon carbide vapor phase epitaxy chamber, and fill the expansion cavity 3041, thereby solving the problem of temperature loss due to sealing in the device of the present invention, and further optimizing the quality of the silicon carbide vapor phase epitaxy reaction.

[0053] In the embodiment of the present invention, a slideway 101 is symmetrically provided at the top of the gas phase base 1, the bottom end of the sliding mechanism 2 is movably connected to the slideway 101, the engaging and disengaging mechanism 4 is arranged between the two slideways 101, and the top end of the engaging and disengaging mechanism 4 is also connected to the sliding mechanism 2. The sliding mechanism 2 includes a sliding assembly 201 and a rotating assembly 202, a plurality of sliding assemblies 201 are slidably arranged on the slideway 101, the rotating assembly 202 is arranged at the top end of the sliding assembly 201, the first reaction shell 301 and the second reaction shell 302 are installed on the rotating assembly 202, and the engaging and disengaging mechanism 4 is connected to one side of the rotating assembly 202. The sliding assembly 201 includes a pulley 2011, a support plate 2012 and a support seat 2013, the support plate 2012 is arranged on the slideway 101, the pulley 2011 is rotatably connected to the bottom end of the support plate 2012, the support seat 2013 is arranged on the support plate 2012, and the rotating assembly 202 is connected to the top end of the support seat 2013. The present invention provides two slideways 101 on the vapor phase base 1, and a plurality of pulleys 2011 are slidably provided on the slideways 101. The pulleys 2011 are installed at the bottom ends of the support plate 2012 and the support seat 2013. The first reaction shell 301 and the second reaction shell 302 are rotated and moved in opposite directions on the slideways 101 through the rotation and separation action of the coupling and separation mechanism 4, so as to be combined or separated, which is beneficial to the subsequent cleaning of the inner wall of the vapor phase epitaxial chamber. Regular cleaning of the inner wall of the cavity can effectively remove the residues and impurities attached to the wall, reduce the influence of these impurities on the epitaxial layer growth process, and thus improve the purity and quality of the epitaxial layer.

[0054] In an embodiment of the present invention, the rotating assembly 202 includes a centripetal frame 2021, a rotating roller 2022 and a rotating ring 2023. The centripetal frame 2021 is connected to the top of the support seat 2013 in an inclined state, the rotating roller 2022 is rotatably connected to the centripetal frame 2021, the rotating ring 2023 is rotatably connected to a plurality of rotating rollers 2022, and the engaging and disengaging mechanism 4 is connected to the rotating roller 2022.

[0055] The engaging and disengaging mechanism 4 comprises a cylinder 401, a push rod 402, a rotating disk 403, an engaging and disengaging inner rod 404 and an engaging and disengaging outer rod 405. The cylinder 401 is arranged between the two slideways 101, the push rod 402 is connected to the output end of the cylinder 401, the rotating disk 403 is connected to one of the rotating rollers 2022, the engaging and disengaging outer rod 405 is connected to the other rotating roller 2022, the engaging and disengaging inner rod 404 is connected to the end of the rotating disk 403 away from the rotating roller 2022, and the end of the push rod 402 away from the cylinder 401 is movably connected to the rotating disk 403; wherein, a rotating rod 4021 is provided at the end of the push rod 402 away from the cylinder 401, a rotating groove 4031 is provided on the rotating disk 403, and the rotating rod 4021 is movably connected to the rotating groove 4031. The end of the inner rod 404 away from the rotating disk 403 is movably inserted on the outer rod 405; a limit rod 4041 is provided on the outer wall of the inner rod 404, and a curved hole 4051 is provided on the outer wall of the outer rod 405, and the limit rod 4041 is movably connected to the curved hole 4051.

[0056] The present invention arranges a cylinder 401 between two slideways 101, and the cylinder 401 pushes the push rod 402 to move, and the push rod 402 pushes the rotating disk 403 to pull the inner connecting rod 404 out of the outer connecting rod 405, and the limit rod 4041 of the inner connecting rod 404 slides on the curved hole 4051 of the outer connecting rod 405, so that the inner connecting rod 404 and the outer connecting rod 405 both rotate during the separation process, and the rotation of the inner connecting rod 404 and the outer connecting rod 405 drives the rotating disk 403 to rotate. The movable roller 2022 rotates on the centripetal frame 2021, and the rotating roller 2022 drives the rotating ring 2023 to rotate. The rotating ring 2023 drives the first reaction shell 301 and the second reaction shell 302 to rotate in opposite directions, so that the epitaxial growth shell is separated, and the cleanliness of the inner wall of the cavity is improved. The clean reaction cavity is helpful to maintain a stable growth environment, reduce growth defects caused by impurities, such as micropipes, screw dislocations, etc., and further improve the crystal quality and crystallinity of the silicon carbide epitaxial layer.

[0057] As another embodiment of the present invention, the sealing mechanism 6 includes a servo motor 601, a ball screw 602, a displacement block 603, a support and contraction assembly 604, a fixed bearing block 605 and a universal joint 606. The servo motor 601 is arranged at the end of the expansion chamber 3041, the ball screw 602 is connected to the output end of the servo motor 601, the displacement block 603 is sleeved on the ball screw 602, the displacement block 603 is adapted to the ball screw 602, the fixed bearing block 605 is sleeved on the other end of the ball screw 602, the support and contraction assembly 604 is connected to the displacement block 603 and the fixed bearing block 605, the universal joint 606 is arranged on the fixed bearing block 605, and the inner wall of the universal joint 606 is connected to the end of the ball screw 602 away from the displacement block 603. The support assembly 604 includes a first connecting arm 6041, a second connecting arm 6042 and a support plate 6043. The first connecting arm 6041 is rotatably connected to the displacement block 603, the second connecting arm 6042 is rotatably connected to the fixed supporting block 605, the support plate 6043 is connected to one end of the first connecting arm 6041 and the second connecting arm 6042 away from the displacement block 603 and the fixed supporting block 605, and the first connecting arm 6041 and the second connecting arm 6042 are rotatably connected to the support plate 6043 at one end away from the displacement block 603 and the fixed supporting block 605.

[0058] The present invention sets a micro servo motor 601 at the end of the expansion cavity 3041, drives the servo motor 601 to drive the ball screw 602 to rotate, the ball screw 602 causes the displacement block 603 to move, and the displacement block 603 moves to drive the first connecting arm 6041 and the second connecting arm 6042 of the support and contraction assembly 604 to rotate and bend, so that the support and contraction plate 6043 can expand or shrink on the inner wall of the expansion material 5 in coordination with the combined use state and the separated cleaning state of the first reaction shell 301 and the second reaction shell 302, further improves the fit between the expansion material 5 and the cavity, helps to maintain the sealing of the reaction cavity, prevents gas leakage, and ensures the stability and safety of the epitaxial growth process.

[0059] Working principle: When the present invention is used, firstly, the vapor phase epitaxial growth state or the cleaning state is selected according to the use state.

[0060] If the cleaning state is selected, the cylinder 401 is first driven to move the push rod 402, and the push rod 402 pushes the rotating disk 403 to pull the inner rod 404 out of the outer rod 405, and the limit rod 4041 of the inner rod 404 slides on the curved hole 4051 of the outer rod 405, so that the inner rod 404 and the outer rod 405 rotate in the process of separation, and the rotation of the inner rod 404 and the outer rod 405 drives the rotating roller 2022 to rotate on the centripetal frame 2021, and the rotating roller 2022 drives the rotating roller 2022 to rotate. The ring 2023 rotates, and the rotating ring 2023 drives the first reaction shell 301 and the second reaction shell 302 to rotate in opposite directions, so that the epitaxial growth shell is separated, and the servo motor 601 is driven to drive the ball screw 602 to rotate forward while driving the cylinder 401 to stroke, and the ball screw 602 causes the displacement block 603 to move, and the displacement block 603 moves to drive the first connecting arm 6041 and the second connecting arm 6042 of the expansion assembly 604 to rotate and flatten, so that the expansion plate 6043 is separated from the inner wall of the expansion material 5. Then, the inner wall is cleaned by manual cleaning or external mechanical cleaning.

[0061] If the vapor phase epitaxial growth state is selected, the cylinder 401 is driven to return, and the push rod 402 is pushed to move. The push rod 402 pushes the rotating disk 403 so that the inner rod 404 of the separation is inserted into the outer rod 405 of the separation. The limit rod 4041 of the inner rod 404 slides on the curved hole 4051 of the outer rod 405, so that the inner rod 404 and the outer rod 405 are both rotated during the separation process. The rotation of the inner rod 404 and the outer rod 405 drives the rotating roller 2022 to rotate on the centripetal frame 2021, and the rotating roller 2022 drives the rotating ring 2023 to rotate, and the rotating ring 2023 drives The first reaction shell 301 and the second reaction shell 302 rotate in opposite directions, so that the epitaxial growth shells are merged; while driving the cylinder 401 to return, the servo motor 601 is driven to drive the ball screw 602 to reverse, and the ball screw 602 causes the displacement block 603 to move. The movement of the displacement block 603 drives the first connecting arm 6041 and the second connecting arm 6042 of the support and contraction assembly 604 to rotate and bend, so that the support and contraction plate 6043 cooperates with the first reaction shell 301 and the second reaction shell 302 on the inner wall of the expansion material 5 to form a close fit, and silicon carbide epitaxial growth is performed.

[0062] The embodiments of the present invention disclose preferred embodiments, but are not limited thereto. A person skilled in the art can easily understand the spirit of the present invention based on the above embodiments and make different extensions and changes. However, as long as they do not deviate from the spirit of the present invention, they are all within the protection scope of the present invention.

Claims

1. A silicon carbide vapor phase epitaxial chamber, characterized in that: The invention comprises a gas phase base (1), wherein a sliding mechanism (2) is provided on the gas phase base (1), an epitaxial growth mechanism (3) is provided on the sliding mechanism (2), a closing and closing mechanism (4) is provided on the gas phase base (1) at a position located at the bottom end of the epitaxial growth mechanism (3), an expansion material (5) is arranged inside the epitaxial growth mechanism (3), and a plurality of sealing mechanisms (6) are also arranged inside the expansion material (5); The epitaxial growth mechanism (3) comprises a first reaction shell (301), a second reaction shell (302), a rotation-assisting assembly (303), a sealing chamber (304) and a growth chamber (305); the first reaction shell (301) is arranged at one end of the sliding mechanism (2); the second reaction shell (302) is arranged at the other end of the sliding mechanism (2); the first reaction shell (301) is movably connected to the second reaction shell (302); the sealing chamber (304) is provided on the first reaction shell (301) and the second reaction shell (302); the rotation-assisting assembly (303), the expansion material (5) and the sealing mechanism (6) are all arranged on the sealing chamber (304); The first reaction shell (301) and the second reaction shell (302) are both spiral-shaped, and the inner walls of the first reaction shell (301) and the second reaction shell (302) cooperate to form the cylindrical growth chamber (305); The sealed cavity (304) comprises an expansion cavity (3041) and a mounting cavity (3042); the expansion cavity (3041) is provided on the first reaction shell (301) and the second reaction shell (302); the mounting cavity (3042) is symmetrically provided on the first reaction shell (301) and the second reaction shell (302) at positions close to the outside of the expansion cavity (3041); the expansion material (5) is provided on the expansion cavity (3041); the rotation-assisting component (303) is provided on the mounting cavity (3042); and a rotation hole (3043) is also provided on the mounting cavity (3042); The rotation-assisting component (303) comprises a ball bearing (3031) and a rotating rod (3032), wherein the rotating rod (3032) is rotatably disposed on the rotating hole (3043), and a plurality of the ball bearings (3031) are movably disposed on the mounting cavity (3042) via the rotating rod (3032); The top of the gas phase base (1) is symmetrically provided with slideways (101), the bottom end of the sliding mechanism (2) is movably connected to the slideways (101), the engaging and disengaging mechanism (4) is arranged between the two slideways (101), and the top end of the engaging and disengaging mechanism (4) is also connected to the sliding mechanism (2); The sliding mechanism (2) comprises a sliding assembly (201) and a rotating assembly (202); a plurality of the sliding assemblies (201) are slidably arranged on the slideway (101); the rotating assembly (202) is arranged at the top of the sliding assembly (201); the first reaction shell (301) and the second reaction shell (302) are mounted on the rotating assembly (202); and the engaging / disengaging mechanism (4) is connected to one side of the rotating assembly (202).

2. A silicon carbide vapor phase epitaxial chamber according to claim 1, characterized in that: The sliding assembly (201) comprises a pulley (2011), a support plate (2012) and a support seat (2013); the support plate (2012) is arranged on the slideway (101); the pulley (2011) is rotatably connected to the bottom end of the support plate (2012); the support seat (2013) is arranged on the support plate (2012); and the rotating assembly (202) is connected to the top end of the support seat (2013).

3. A silicon carbide vapor phase epitaxial chamber according to claim 2, characterized in that: The rotating assembly (202) comprises a centripetal frame (2021), rotating rollers (2022) and a rotating ring (2023); the centripetal frame (2021) is connected to the top of the support seat (2013) in an inclined state; the rotating rollers (2022) are rotatably connected to the centripetal frame (2021); the rotating ring (2023) is rotatably connected to a plurality of the rotating rollers (2022); and the engaging / disengaging mechanism (4) is connected to the rotating rollers (2022).

4. A silicon carbide vapor phase epitaxial chamber according to claim 3, characterized in that: The engaging / disengaging mechanism (4) comprises a cylinder (401), a push rod (402), a rotating disk (403), an engaging / disengaging inner rod (404) and an engaging / disengaging outer rod (405); the cylinder (401) is arranged between the two slideways (101); the push rod (402) is connected to the output end of the cylinder (401); the rotating disk (403) is connected to one of the rotating rollers (2022); the engaging / disengaging outer rod (405) is connected to the other rotating roller (2022); the engaging / disengaging inner rod (404) is connected to one end of the rotating disk (403) away from the rotating roller (2022); and one end of the push rod (402) away from the cylinder (401) is movably connected to the rotating disk (403); A rotating rod (4021) is provided at one end of the push rod (402) away from the cylinder (401), a rotating groove (4031) is provided on the rotating disk (403), and the rotating rod (4021) is movably connected to the rotating groove (4031).

5. A silicon carbide vapor phase epitaxial chamber according to claim 4, characterized in that: The end of the on-off inner rod (404) away from the rotating disk (403) is movably inserted on the on-off outer rod (405); A limit rod (4041) is provided on the outer wall of the engaging / disengaging inner rod (404), a curved hole (4051) is provided on the outer wall of the engaging / disengaging outer rod (405), and the limit rod (4041) is movably connected to the curved hole (4051).

6. A silicon carbide vapor phase epitaxial chamber according to claim 5, characterized in that: The sealing mechanism (6) comprises a servo motor (601), a ball screw (602), a displacement block (603), a support and contraction assembly (604), a fixed bearing block (605) and a universal joint (606); the servo motor (601) is arranged at the end of the expansion cavity (3041); the ball screw (602) is connected to the output end of the servo motor (601); the displacement block (603) is sleeved on the ball screw (602); The block (603) is adapted to the ball screw (602), the fixed bearing block (605) is sleeved on the other end of the ball screw (602), the expansion assembly (604) is connected to the displacement block (603) and the fixed bearing block (605), the universal joint (606) is arranged on the fixed bearing block (605), and the inner wall of the universal joint (606) is connected to one end of the ball screw (602) away from the displacement block (603).

7. A silicon carbide vapor phase epitaxial growth chamber according to claim 6, characterized in that: The support and contraction assembly (604) comprises a first connecting arm (6041), a second connecting arm (6042) and a support and contraction plate (6043); the first connecting arm (6041) is rotatably connected to the displacement block (603); the second connecting arm (6042) is rotatably connected to the fixed bearing block (605); the support and contraction plate (6043) is connected to one end of the first connecting arm (6041) and the second connecting arm (6042) away from the displacement block (603) and the fixed bearing block (605); and one end of the first connecting arm (6041) and the second connecting arm (6042) away from the displacement block (603) and the fixed bearing block (605) is rotatably connected to the support and contraction plate (6043).

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