Large-format photolithography system based on parallel light source capable of eliminating diffraction

Abstract

The present invention relates to the technical field of circuit board manufacturing, and in particular to a large-format photolithography system based on a parallel light source capable of eliminating diffraction, including a parallel exposure light source, a lens, an incident regulator, a mask holder, a mask plate, a movable exposure stage, a control console, a light source sensor, an image sensor, an alignment sensor, a calibration sensor, and an optical imaging sensor. Through real-time monitoring and intelligent adjustment, the system can automatically compensate for problems such as uneven light intensity, incident angle deviation, mask plate position error, and inconsistent exposure stage movement speed. This intelligent control significantly improves the accuracy and repeatability of photolithography, reduces human intervention and potential errors, thereby improving production efficiency and product quality. In addition, the flexibility and accuracy of the system enable it to adapt to different photolithography requirements and process conditions, providing strong technical support for high-precision semiconductor manufacturing and other micro-nano manufacturing fields.

Description

Technical Field

[0001] The invention relates to the technical field of circuit board manufacturing, and in particular to a large-format photolithography system based on a parallel light source capable of eliminating diffraction. Background Art

[0002] With the rise of emerging technologies such as artificial intelligence, big data, and cloud computing, the demand for high-performance computing chips has surged, which has directly promoted the pursuit of smaller and higher-density integrated circuits. The continuous reduction in the feature size of semiconductor devices predicted by Moore's Law has posed unprecedented challenges to lithography technology, especially in terms of diffraction limit, pattern fidelity, and production efficiency. Therefore, the industry urgently needs innovative solutions to achieve more sophisticated manufacturing processes and maintain the pace of technological progress.

[0003] The patent document with publication number CN102998914A discloses a direct-write photolithography processing system and a photolithography method, which includes a control system capable of using Fourier expansion calculation function and an exposure system controlled by the control system to realize multiple photolithography. The photolithography method is based on the Fourier analysis principle, expands the surface to be engraved into a Fourier polynomial, and then performs multiple photolithography according to the cosine functions of each term in the polynomial, so that the etching of the target surface is realized after the multiple photolithography is superimposed. In the existing photovoltaic silicon wafers and fine circuit molding that can achieve 5-10 micron level, most of the graphical schemes are photolithography processes using the laser direct writing technology route (Laser Direct Imaging). The traditional LDI system uses the DMD reflector system to reflect the image pixelation (maximum 2176X1528 pixels), and then projects it to the target area through the lens group to achieve exposure. Because the size of the DMD is 1.38 inches, the absolute optical resolution of the LDI system is limited, and the graphic imaging needs to be completed in the motion scanning controlled by a precision servo motor. Therefore, in practical applications, exposure is performed on lines of 30 microns and above. In the exposure of lines below 25 microns, it is necessary to reduce the operating speed and perform scanning after multi-point positioning, which often forms a large number of sawtooth defects, resulting in a serious reduction in efficiency. In the lithography process, the lens group adjustment of ultra-fine lines below 25 microns has a contradiction between the focal width and the depth of field, and the exposure quality will be seriously reduced. As a result, the aspect ratio of 10 microns high and 10 microns wide is difficult to achieve. Summary of the invention

[0004] To this end, the present invention provides a large-format lithography system based on a parallel light source capable of eliminating diffraction, so as to overcome the problems of low exposure efficiency and exposure yield of traditional LDI lithography at high-precision scale in the prior art.

[0005] To achieve the above object, the present invention provides a large-format photolithography system based on a parallel light source capable of eliminating diffraction, comprising:

[0006] A parallel exposure light source, for generating a light beam within a preset exposure time according to a preset light source power;

[0007] A lens, for refracting the light beam irradiated onto its surface and keeping the light beam perpendicular to the horizontal plane;

[0008] An incident adjuster, used to adjust the irradiation angle of the parallel exposure light source and the distance of the parallel exposure light source relative to the lens;

[0009] A mask holder, used to hold a mask plate used to control the transmitted light beam to form a predetermined pattern, parallel to a movable exposure table used to carry a photosensitive silicon wafer, and drive the mask plate to move relative to the movable exposure table;

[0010] A control console, connected to a light source sensor for monitoring the real-time uniformity of light intensity distribution of the light beam irradiated to the lens surface and the parallel exposure light source, respectively, for adjusting the light source power according to the real-time uniformity of light intensity distribution;

[0011] The console is also connected to the incident adjuster and an image sensor for monitoring the real-time incident angle of the light beam passing through the lens and the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface, respectively, to select and adjust the irradiation angle of the parallel exposure light source or the distance of the parallel exposure light source relative to the lens according to the monitoring result of the image sensor and a preset standard angle range;

[0012] The console is also connected to the mask holder and an alignment sensor for monitoring the real-time mask position of the mask, respectively, to move the mask holder according to the monitoring result of the alignment sensor and a preset standard position deviation;

[0013] The control console is also connected to the mobile exposure platform and a calibration sensor for monitoring the real-time exposure platform movement speed of the mobile exposure platform, respectively, to move the mobile exposure platform according to the monitoring result of the calibration sensor and a preset standard movement speed;

[0014] The console is also connected to an optical imaging sensor for monitoring the quality of the exposure pattern, so as to adjust the standard moving speed of the movable exposure platform, or adjust the exposure time, or adjust the standard position deviation according to the monitoring result of the optical imaging sensor.

[0015] Furthermore, the control console adjusts the light source power according to the real-time light intensity distribution uniformity, including:

[0016] In the case where the real-time light intensity distribution uniformity is less than the preset standard light intensity distribution uniformity, the control console increases and adjusts the light source power of the parallel exposure light source according to the real-time light intensity distribution uniformity and the standard light intensity distribution uniformity.

[0017] Furthermore, the console adjusts the irradiation angle of the parallel exposure light source according to the monitoring result of the image sensor and a preset standard angle range, including:

[0018] When the real-time incident angle of the light beam is not within the preset angle range, the control console increases or decreases the irradiation angle of the parallel exposure light source according to the real-time incident angle and the preset angle range.

[0019] Furthermore, when the real-time incident angle of the light beam is within a preset angle range, the console increases or decreases the distance of the parallel exposure light source relative to the lens according to the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface and a preset standard length range.

[0020] Further, the console moves the mask holder according to the monitoring result of the alignment sensor, including:

[0021] The console calculates a position deviation according to a real-time mask position and a preset standard mask position, and moves the mask holder according to the calculated position deviation and the preset standard position deviation.

[0022] Further, the control console moves the movable exposure platform according to the monitoring result of the calibration sensor, including:

[0023] The control console calculates a speed deviation according to the real-time exposure platform position and a preset standard exposure platform position, and moves the movable exposure platform according to the calculated speed deviation and a preset standard moving speed.

[0024] Furthermore, the control console adjusts the standard moving speed of the movable exposure platform according to the monitoring result of the optical imaging sensor, including:

[0025] When the real-time definition monitored by the optical imaging sensor is less than a preset standard definition, the control console reduces and adjusts the standard moving speed of the movable exposure platform according to the real-time definition and the standard definition.

[0026] Furthermore, the control console adjusts the exposure time according to the monitoring result of the optical imaging sensor, including:

[0027] When the real-time exposure rate monitored by the optical imaging sensor is less than a preset standard exposure rate, the console increases and adjusts the exposure time according to the real-time exposure rate and the standard exposure rate.

[0028] Furthermore, when the real-time exposure rate monitored by the optical imaging sensor is greater than or equal to a preset standard exposure rate when the single exposure area is greater than or equal to 300mmX300mm, the console reduces and adjusts the exposure time according to the real-time exposure rate and the standard exposure rate.

[0029] Furthermore, the control console adjusts the standard position deviation according to the monitoring result of the optical imaging sensor, including:

[0030] When the real-time line spacing monitored by the optical imaging sensor is less than the preset standard line spacing, the console reduces and adjusts the standard position deviation according to the real-time line spacing and the standard line spacing.

[0031] Compared with the prior art, the beneficial effect of the present invention is that, through real-time monitoring and intelligent adjustment, the system can automatically compensate for problems such as uneven light intensity, incident angle deviation, mask position error, and inconsistent exposure stage movement speed. This intelligent control significantly improves the accuracy and repeatability of lithography, reduces human intervention and potential errors, and thus improves production efficiency and product quality. In addition, the flexibility and accuracy of the system enable it to adapt to different lithography requirements and process conditions, providing strong technical support for high-precision semiconductor manufacturing and other micro-nano manufacturing fields.

[0032] Furthermore, by monitoring the uniformity of light intensity distribution in real time and comparing it with the preset standard, the mechanism of intelligently adjusting the light source power significantly improves the adaptability and lithography quality of the lithography system. When the monitored uniformity of light intensity distribution is lower than the standard value, the system automatically increases the light source power to compensate for the lack of light intensity and ensure that the light intensity distribution in the entire exposure area reaches the required uniformity. This adaptive adjustment not only improves the stability and reliability of the lithography process, but also helps to reduce pattern defects caused by uneven light intensity, thereby greatly improving the performance and yield of the final product. In addition, this intelligent adjustment process reduces dependence on manual intervention, optimizes production efficiency, and reduces energy consumption, achieving a more economical and environmentally friendly manufacturing process.

[0033] Furthermore, by comparing the monitoring results of the image sensor with the preset standard angle range, the irradiation angle of the parallel exposure light source is intelligently adjusted. This function greatly enhances the accuracy and flexibility of the lithography system. When the real-time incident angle deviates from the preset range, the console can respond quickly and realign the light beam by increasing or decreasing the irradiation angle to ensure that the light beam is incident on the lens at the optimal angle. This precise adjustment not only ensures the consistency and uniformity of the light beam throughout the exposure process, but also improves the resolution and quality of the lithography pattern. In addition, this automated adjustment reduces human errors and improves production efficiency. It also enables the system to adapt to the lithography requirements under different process conditions, with significant technical advantages and production benefits.

[0034] Furthermore, when it is detected that the real-time incident angle of the light beam is already within the preset angle range, it can still be fine-tuned according to the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface. This function further improves the accuracy and adaptability of the lithography system. By comparing the real-time major axis length with the preset standard length range, the console can accurately increase or decrease the distance of the parallel exposure light source relative to the lens, thereby optimizing the focus and coverage of the light beam. This meticulous adjustment ensures the uniform distribution of the light beam on the silicon wafer, avoids pattern defects caused by uneven beam distribution, and significantly improves the quality and yield of the lithography process. In addition, this intelligent adjustment process not only reduces the reliance on manual monitoring and reduces the complexity of operation, but also improves the automation level and production efficiency of the system, providing a strong guarantee for achieving high-precision and high-efficiency lithography manufacturing.

[0035] Furthermore, through real-time analysis of the monitoring results of the alignment sensor, precise control of the mask holder is achieved to ensure the alignment accuracy between the mask and the photosensitive silicon wafer. When the real-time mask position deviates from the preset standard position, the console automatically calculates the deviation value and compares it with the preset standard position deviation. According to this comparison result, the position of the mask holder is adjusted accordingly. This process not only significantly improves the accuracy of mask alignment during the lithography process, but also reduces pattern defects caused by alignment errors, thereby improving the overall lithography quality and production efficiency. In addition, automated alignment adjustment reduces manual intervention and the possibility of human operating errors, while also shortening the production cycle, providing strong technical support for large-scale and efficient lithography production.

[0036] Furthermore, this intelligent speed control not only ensures the precise transfer of the pattern during the exposure process, but also effectively avoids uneven exposure or pattern distortion caused by speed mismatch, significantly improving the accuracy and repeatability of the lithography process.

[0037] Furthermore, through real-time monitoring of the calibration sensor, dynamic adjustment of the precise position of the mobile exposure stage is achieved, which significantly improves the synchronization and consistency of the lithography process. When there is a deviation between the real-time exposure stage position and the preset standard position, the console will calculate the speed deviation and compare it with the preset standard moving speed based on this deviation, and automatically adjust the moving speed of the exposure stage to ensure that it is synchronized with the exposure of the light beam.

[0038] Furthermore, by increasing the exposure time to adjust the exposure process, this intelligent response mechanism greatly improves the flexibility and accuracy of the lithography process. Real-time exposure rate monitoring allows the system to instantly optimize the exposure conditions to ensure that the photosensitive material receives enough light to form a clear pattern.

[0039] Furthermore, the real-time line spacing is monitored by an optical imaging sensor and compared with the preset standard line spacing, and the standard position deviation is intelligently adjusted. This fine-tuning mechanism significantly improves the accuracy and adaptability of the lithography system. When the real-time line spacing monitored is less than the standard line spacing, the console will automatically reduce the standard position deviation to ensure the alignment accuracy between the mask and the photosensitive silicon wafer, thereby avoiding pattern distortion or size error caused by position deviation. This dynamic adjustment based on real-time monitoring data not only improves the resolution and quality of the lithography pattern, but also enhances the system's adaptability to different production conditions, ensuring consistent high-standard production quality under various process conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 is a schematic diagram of a large-format photolithography system based on a parallel light source capable of eliminating diffraction according to this embodiment;

[0041] Figure 2 This is a decision logic diagram for adjusting the light source power in this embodiment;

[0042] Figure 3 This is a decision logic diagram for adjusting the illumination angle of this embodiment;

[0043] Figure 4 This is a decision logic diagram for distance adjustment in this embodiment. DETAILED DESCRIPTION

[0044] In order to make the objects and advantages of the present invention more clearly understood, the present invention is further described below in conjunction with embodiments; it should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0045] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.

[0046] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside" and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings. This is merely for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0047] In addition, it should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0048] See also Figure 1 As shown, it is a schematic diagram of a large-format photolithography system based on a parallel light source capable of eliminating diffraction according to this embodiment;

[0049] This embodiment provides a large-format photolithography system based on a parallel light source capable of eliminating diffraction, comprising:

[0050] A parallel exposure light source, for generating a light beam within a preset exposure time according to a preset light source power;

[0051] A lens, for refracting the light beam irradiated onto its surface and keeping the light beam perpendicular to the horizontal plane;

[0052] An incident adjuster, used to adjust the irradiation angle of the parallel exposure light source and the distance of the parallel exposure light source relative to the lens;

[0053] A mask holder, used to hold a mask plate used to control the transmitted light beam to form a predetermined pattern, parallel to a movable exposure table used to carry a photosensitive silicon wafer, and drive the mask plate to move relative to the movable exposure table;

[0054] A control console, connected to a light source sensor for monitoring the real-time uniformity of light intensity distribution of the light beam irradiated to the lens surface and the parallel exposure light source, respectively, for adjusting the light source power according to the real-time uniformity of light intensity distribution;

[0055] The console is also connected to the incident adjuster and an image sensor for monitoring the real-time incident angle of the light beam passing through the lens and the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface, respectively, to select and adjust the irradiation angle of the parallel exposure light source or the distance of the parallel exposure light source relative to the lens according to the monitoring result of the image sensor and a preset standard angle range;

[0056] The console is also connected to the mask holder and an alignment sensor for monitoring the real-time mask position of the mask, respectively, to move the mask holder according to the monitoring result of the alignment sensor and a preset standard position deviation;

[0057] The control console is also connected to the mobile exposure platform and a calibration sensor for monitoring the real-time exposure platform movement speed of the mobile exposure platform, respectively, to move the mobile exposure platform according to the monitoring result of the calibration sensor and a preset standard movement speed;

[0058] The console is also connected to an optical imaging sensor for monitoring the quality of the exposure pattern, so as to adjust the standard moving speed of the movable exposure platform, or adjust the exposure time, or adjust the standard position deviation according to the monitoring result of the optical imaging sensor.

[0059] Through real-time monitoring and intelligent adjustment, the system can automatically compensate for problems such as uneven light intensity, incident angle deviation, mask position error, and inconsistent exposure stage movement speed. This intelligent control significantly improves the accuracy and repeatability of lithography, reduces human intervention and potential errors, and thus improves production efficiency and product quality. In addition, the flexibility and precision of the system enable it to adapt to different lithography requirements and process conditions, providing strong technical support for high-precision semiconductor manufacturing and other micro-nano manufacturing fields.

[0060] Example parameter settings:

[0061] Preset light source power: Ppreset = 200W;

[0062] Preset exposure time: Tpreset = 20s;

[0063] Standard light intensity distribution uniformity: Ustandard = 95%;

[0064] Real-time light intensity distribution uniformity: Ureal-time = 90%;

[0065] Preset angle range: θpreset = [5°, 10°];

[0066] Real-time beam incident angle: θreal-time = 4.5°;

[0067] Standard major axis length Lstandard = 500 μm;

[0068] Real-time long axis length: Lreal-time = 480 μm;

[0069] Standard mask position deviation: Dstandard = 1μm;

[0070] Real-time mask position deviation: Dreal-time = 1.5 μm;

[0071] Standard moving speed: Vstandard = 100 mm / s;

[0072] Real-time moving speed: Vreal-time = 90 mm / s;

[0073] Standard definition: Cstandard = 98%;

[0074] Real-time clarity: Creal-time = 95%;

[0075] Standard exposure rate: Rstandard = 85%;

[0076] Real-time exposure rate: Rreal-time = 80%;

[0077] Standard line spacing: Sstandard = 0.2 μm;

[0078] Real-time line spacing: Sreal-time = 0.18 μm.

[0079] Please continue reading Figure 2 As shown, it is a decision logic diagram of light source power adjustment in this embodiment;

[0080] Specifically, the control console adjusts the light source power according to the real-time light intensity distribution uniformity, including:

[0081] When the real-time light intensity distribution uniformity is less than the preset standard light intensity distribution uniformity, the control console increases and adjusts the light source power of the parallel exposure light source according to the real-time light intensity distribution uniformity and the standard light intensity distribution uniformity, wherein the light source power adjustment amount ΔP is: ΔP=kP×(Ustandard-Ureal-time);

[0082] Assume that the light source power proportional factor kP = 5W / %;

[0083] New light source power Pnew: Pnew=Ppreset+ΔP=225W.

[0084] The mechanism of intelligently adjusting the light source power by real-time monitoring the uniformity of light intensity distribution and comparing it with the preset standard significantly improves the adaptability and quality of lithography systems. When the monitored uniformity of light intensity distribution is lower than the standard value, the system automatically increases the light source power to compensate for the lack of light intensity and ensure that the light intensity distribution in the entire exposure area reaches the required uniformity. This adaptive adjustment not only improves the stability and reliability of the lithography process, but also helps to reduce pattern defects caused by uneven light intensity, thereby greatly improving the performance and yield of the final product. In addition, this intelligent adjustment process reduces dependence on manual intervention, optimizes production efficiency, and reduces energy consumption, achieving a more economical and environmentally friendly manufacturing process.

[0085] Please continue reading Figure 3 As shown, it is a decision logic diagram for adjusting the illumination angle of this embodiment;

[0086] Specifically, the control console adjusts the irradiation angle of the parallel exposure light source according to the monitoring result of the image sensor and the preset standard angle range, including:

[0087] When the real-time incident angle of the light beam is not within the preset angle range, the console increases or decreases the irradiation angle of the parallel exposure light source according to the real-time incident angle and the preset angle range, wherein the irradiation angle adjustment amount Δθ=kθ×(θpreset-θreal-time);

[0088] Assume that the illumination angle scaling factor kθ = 0.1° / %;

[0089] The new illumination angle θnew=θreal-time+Δθ=4.55°.

[0090] By comparing the monitoring results of the image sensor with the preset standard angle range, the irradiation angle of the parallel exposure light source is intelligently adjusted. This function greatly enhances the accuracy and flexibility of the lithography system. When the real-time incident angle deviates from the preset range, the console can respond quickly and realign the beam by increasing or decreasing the irradiation angle to ensure that the beam is incident on the lens at the optimal angle. This precise adjustment not only ensures the consistency and uniformity of the beam throughout the exposure process, but also improves the resolution and quality of the lithography pattern. In addition, this automated adjustment reduces human errors and improves production efficiency. It also enables the system to adapt to the lithography requirements under different process conditions, with significant technical advantages and production benefits.

[0091] Please continue reading Figure 4 As shown, it is a decision logic diagram of distance adjustment in this embodiment;

[0092] Specifically, when the real-time incident angle of the light beam is within a preset angle range, the console increases or decreases the distance of the parallel exposure light source relative to the lens according to the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface and a preset standard length range, wherein the distance adjustment amount ΔD=kD×(Lstandard-Lreal-time);

[0093] Assume that the distance scaling factor kD = 0.01 mm / μm;

[0094] The new distance Dnew=Dreal-time+ΔD=2mm.

[0095] When it is detected that the real-time incident angle of the light beam is already within the preset angle range, it can still be fine-tuned according to the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface. This function further improves the accuracy and adaptability of the lithography system. By comparing the real-time major axis length with the preset standard length range, the console can accurately increase or decrease the distance of the parallel exposure light source relative to the lens, thereby optimizing the focus and coverage of the light beam. This meticulous adjustment ensures the uniform distribution of the light beam on the silicon wafer, avoids pattern defects caused by uneven beam distribution, and significantly improves the quality and yield of the lithography process. In addition, this intelligent adjustment process not only reduces the reliance on manual monitoring and reduces the complexity of operation, but also improves the automation level and production efficiency of the system, providing a strong guarantee for achieving high-precision and high-efficiency lithography manufacturing.

[0096] Specifically, the console moves the mask holder according to the monitoring result of the alignment sensor, including:

[0097] The console calculates a position deviation according to a real-time mask position and a preset standard mask position, and moves the mask holder according to the calculated position deviation and the preset standard position deviation, wherein a movement adjustment amount ΔDmask=kmask×(Dstandard-Dreal-time);

[0098] Assume the movement scale factor kmask = 0.5 μm / μm;

[0099] The new mask position Dnew'=Dreal-time-ΔDmask=1 μm.

[0100] Through real-time analysis of the monitoring results of the alignment sensor, precise control of the mask holder is achieved to ensure the alignment accuracy between the mask and the photosensitive silicon wafer. When the real-time mask position deviates from the preset standard position, the console automatically calculates the deviation value and compares it with the preset standard position deviation. According to this comparison result, the position of the mask holder is adjusted accordingly. This process not only significantly improves the accuracy of mask alignment during the lithography process, but also reduces pattern defects caused by alignment errors, thereby improving the overall lithography quality and production efficiency. In addition, automated alignment adjustment reduces manual intervention and the possibility of human operating errors, while also shortening the production cycle, providing strong technical support for large-scale and efficient lithography production.

[0101] Specifically, the control console moves the movable exposure platform according to the monitoring result of the calibration sensor, including:

[0102] The control console calculates a speed deviation according to the real-time exposure platform position and the preset standard exposure platform position, and moves the movable exposure platform according to the calculated speed deviation and the preset standard moving speed, wherein the moving speed adjustment amount ΔV=kV×(Vstandard-Vreal-time);

[0103] Assume that the moving speed proportional factor kV = 0.5 mm / s;

[0104] The new moving speed Vnew=Vreal-time+ΔV=95mm / s.

[0105] This intelligent speed control not only ensures the precise transfer of the pattern during the exposure process, but also effectively avoids uneven exposure or pattern distortion caused by speed mismatch, significantly improving the accuracy and repeatability of the lithography process.

[0106] Specifically, the control console adjusts the standard moving speed of the movable exposure platform according to the monitoring result of the optical imaging sensor, including:

[0107] When the real-time definition monitored by the optical imaging sensor is less than a preset standard definition, the control console reduces and adjusts the standard moving speed of the movable exposure platform according to the real-time definition and the standard definition.

[0108] The real-time monitoring of the calibration sensor enables dynamic adjustment of the precise position of the mobile exposure stage, which significantly improves the synchronization and consistency of the lithography process. When there is a deviation between the real-time exposure stage position and the preset standard position, the console will calculate the speed deviation and automatically adjust the movement speed of the exposure stage based on this deviation and the preset standard movement speed to ensure that it is synchronized with the exposure of the light beam.

[0109] Specifically, the control console adjusts the exposure time according to the monitoring result of the optical imaging sensor, including:

[0110] When the real-time exposure rate monitored by the optical imaging sensor is less than the preset standard exposure rate, the control console increases and adjusts the exposure time according to the real-time exposure rate and the standard exposure rate, and the exposure time adjustment amount ΔT is: ΔT=kT×(Rstandard-Rreal-time);

[0111] Assume that the exposure time scaling factor kT = 0.1s / %;

[0112] New exposure time Tnew: Tnew=Tpreset+ΔT=20.5s.

[0113] Specifically, when the real-time exposure rate monitored by the optical imaging sensor is greater than or equal to a preset standard exposure rate when the single exposure area is greater than or equal to 300mmX300mm, the console reduces and adjusts the exposure time according to the real-time exposure rate and the standard exposure rate.

[0114] This intelligent response mechanism greatly improves the flexibility and accuracy of the photolithography process by increasing the exposure time to adjust the exposure process. Real-time exposure rate monitoring allows the system to instantly optimize the exposure conditions to ensure that the photosensitive material receives enough light to form a clear pattern.

[0115] Specifically, the control console adjusts the standard position deviation according to the monitoring result of the optical imaging sensor, including:

[0116] When the real-time line spacing monitored by the optical imaging sensor is less than the preset standard line spacing, the control console reduces and adjusts the standard position deviation according to the real-time line spacing and the standard line spacing, wherein the standard position deviation adjustment amount ΔDbias is: ΔDbias=kbias×(Sstandard-Sreal-time);

[0117] Assume the scaling factor kbias = 0.05 μm / μm;

[0118] New standard position deviation Dstandard,new: Dstandard,new=Dstandard-ΔDbias=0.19μm.

[0119] The real-time line spacing is monitored by an optical imaging sensor and compared with the preset standard line spacing, and the standard position deviation is intelligently adjusted. This fine control mechanism significantly improves the accuracy and adaptability of the lithography system. When the monitored real-time line spacing is less than the standard line spacing, the console will automatically reduce the standard position deviation to ensure the alignment accuracy between the mask and the photosensitive silicon wafer, thereby avoiding pattern distortion or size error caused by position deviation. This dynamic adjustment based on real-time monitoring data not only improves the resolution and quality of the lithography pattern, but also enhances the system's adaptability to different production conditions, ensuring that consistent high-standard production quality can be maintained under various process conditions. So far, the technical solution of the present invention has been described in conjunction with the preferred embodiments shown in the accompanying drawings, but it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art may make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

[0120] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A large-format photolithography system based on a parallel light source capable of eliminating diffraction, characterized in that: include: A parallel exposure light source, for generating a light beam within a preset exposure time according to a preset light source power; A lens, for refracting the light beam irradiated onto its surface and keeping the light beam perpendicular to the horizontal plane; An incident adjuster, used to adjust the irradiation angle of the parallel exposure light source and the distance of the parallel exposure light source relative to the lens; A mask holder, used to hold a mask plate used to control the transmitted light beam to form a predetermined pattern, parallel to a movable exposure table used to carry a photosensitive silicon wafer, and drive the mask plate to move relative to the movable exposure table; A control console, connected to a light source sensor for monitoring the real-time uniformity of light intensity distribution of the light beam irradiated to the lens surface and the parallel exposure light source, respectively, for adjusting the light source power according to the real-time uniformity of light intensity distribution; The console is also connected to the incident adjuster and an image sensor for monitoring the real-time incident angle of the light beam passing through the lens and the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface, respectively, to select and adjust the irradiation angle of the parallel exposure light source or the distance of the parallel exposure light source relative to the lens according to the monitoring result of the image sensor and a preset standard angle range; The console is also connected to the mask holder and an alignment sensor for monitoring the real-time mask position of the mask, respectively, to move the mask holder according to the monitoring result of the alignment sensor and a preset standard position deviation; The control console is also connected to the mobile exposure platform and a calibration sensor for monitoring the real-time exposure platform movement speed of the mobile exposure platform, respectively, to move the mobile exposure platform according to the monitoring result of the calibration sensor and a preset standard movement speed; The control console is also connected to an optical imaging sensor for monitoring the quality of the exposure pattern, and is used to adjust the standard moving speed of the movable exposure table, or adjust the exposure time, or adjust the standard position deviation according to the monitoring result of the optical imaging sensor; The control console adjusts the light source power according to the real-time light intensity distribution uniformity, including: In the case where the real-time light intensity distribution uniformity is less than the preset standard light intensity distribution uniformity, the control console increases and adjusts the light source power of the parallel exposure light source according to the real-time light intensity distribution uniformity and the standard light intensity distribution uniformity; The control console adjusts the irradiation angle of the parallel exposure light source according to the monitoring result of the image sensor and the preset standard angle range, including: When the real-time incident angle of the light beam is not within the preset angle range, the control console increases or decreases the irradiation angle of the parallel exposure light source according to the real-time incident angle and the preset angle range; When the real-time incident angle of the light beam is within a preset angle range, the console increases or decreases the distance of the parallel exposure light source relative to the lens according to the real-time major axis length of the elliptical irradiation area of ​​the light beam on the lens surface and a preset standard length range.

2. The large-format photolithography system based on a parallel light source capable of eliminating diffraction according to claim 1, characterized in that: The console moves the mask holder according to the monitoring result of the alignment sensor, comprising: The console calculates a position deviation according to a real-time mask position and a preset standard mask position, and moves the mask holder according to the calculated position deviation and the preset standard position deviation.

3. The large-format photolithography system based on a parallel light source capable of eliminating diffraction according to claim 2, characterized in that: The control console moves the movable exposure platform according to the monitoring result of the calibration sensor, comprising: The control console calculates a speed deviation according to the real-time exposure platform position and a preset standard exposure platform position, and moves the movable exposure platform according to the calculated speed deviation and a preset standard moving speed.

4. The large-format photolithography system based on a parallel light source capable of eliminating diffraction according to claim 3, characterized in that: The control console adjusts the standard moving speed of the movable exposure platform according to the monitoring result of the optical imaging sensor, including: When the real-time definition monitored by the optical imaging sensor is less than a preset standard definition, the control console reduces and adjusts the standard moving speed of the movable exposure platform according to the real-time definition and the standard definition.

5. The large-format photolithography system based on a parallel light source capable of eliminating diffraction according to claim 4, characterized in that: The control console adjusting the exposure time according to the monitoring result of the optical imaging sensor includes: When the real-time exposure rate monitored by the optical imaging sensor is less than a preset standard exposure rate, the console increases and adjusts the exposure time according to the real-time exposure rate and the standard exposure rate.

6. The large-format photolithography system based on a parallel light source capable of eliminating diffraction according to claim 5, characterized in that: When the real-time exposure rate monitored by the optical imaging sensor is greater than or equal to the preset standard exposure rate when the single exposure area is greater than or equal to 300mmX300mm, the console reduces and adjusts the exposure time according to the real-time exposure rate and the standard exposure rate.

7. The large-format photolithography system based on a parallel light source capable of eliminating diffraction according to claim 6, characterized in that: The control console adjusts the standard position deviation according to the monitoring result of the optical imaging sensor, including: When the real-time line spacing monitored by the optical imaging sensor is less than the preset standard line spacing, the console reduces and adjusts the standard position deviation according to the real-time line spacing and the standard line spacing.

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