Base assembly, vacuum chuck and thin film deposition device

Abstract

The present invention discloses a base assembly, a vacuum suction cup and a thin film deposition device, which relate to the field of semiconductor equipment. The base assembly includes: a vacuum suction cup, which has a bearing surface for bearing a substrate, an annular air groove is provided on the bearing surface, a vacuum suction hole is provided on the annular air groove, and the vacuum suction hole is connected to a vacuum source to adsorb the substrate through the annular air groove; the vacuum suction cup is also provided with a plurality of through holes for accommodating lifting pins, and the positions of the through holes and the annular air groove do not overlap with each other; a heating device is arranged below the vacuum suction cup; wherein the through holes and the annular air groove are connected through a connecting channel. The advantage is that the present invention transports the gas carrying heat in the through hole to the annular air groove through the connecting channel to evacuate the high-temperature gas gathered in the through hole, thereby reducing the temperature of the through hole area. This method helps to improve the uniformity of the substrate temperature distribution, thereby improving the uniformity of the substrate film processing.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a base assembly, a vacuum chuck and a thin film deposition device. Background Art

[0002] In the manufacturing process of semiconductor devices, plasma etching, physical vapor deposition, chemical vapor deposition and other processes are often used to micro-process semiconductor process parts or wafer substrates. The micro-processing manufacturing process is usually carried out in a vacuum reaction chamber, and process gases are introduced into the vacuum reaction chamber, and the process gases are activated by external energy input, and then the surface of the semiconductor process parts or wafer substrates is processed.

[0003] With the vigorous development of semiconductor technology and the increasing integration of devices, the size of chips is getting smaller and smaller. In order to ensure the quality of chips, the process requirements for semiconductors are becoming more and more stringent. Although the thin film processing equipment has been upgraded many times and its performance has been greatly improved, there are still many deficiencies in the uniformity of thin film processing. In particular, with the increasing size of substrates, the existing gas phase processing equipment and methods can no longer meet the uniformity requirements of thin film processing.

[0004] During the substrate processing process, various process conditions will affect the quality of substrate surface treatment, such as the heating temperature field of the substrate, the flow and distribution of the process gas in the reaction chamber, the temperature distribution of the process gas, and the pressure distribution in the reaction chamber, etc., which directly determine the quality of wafer processing production. If the process environment of the reaction area in the reaction chamber is not completely consistent, it will cause uneven surface treatment of the substrate (for example, uneven thickness of the thin film treatment on the substrate surface, uneven composition, uneven physical properties, etc.), thereby reducing the yield rate of substrate production. In actual applications, the process environment in the reaction chamber is often more complicated, and it is difficult to achieve the optimal conditions of various factors. For example, in actual applications, in order to meet various needs, it is necessary to open holes on the base assembly that carries the substrate, but these holes will affect the temperature uniformity of the substrate, resulting in uneven distribution of the heating temperature field of the substrate, thereby causing uneven film processing and affecting the quality of the finished product. Therefore, it is necessary to improve the existing device.

[0005] It should be understood that the above statements merely provide background technology related to the present invention and do not necessarily constitute prior art. Summary of the invention

[0006] Based on the above-mentioned technical problems, the object of the present invention is to provide a base assembly, a vacuum chuck and a thin film deposition device. The base assembly transports the gas carrying heat in the through hole to the annular gas groove through a connecting channel to disperse the high-temperature gas gathered in the through hole, thereby reducing the temperature of the through hole area. This method helps to improve the uniformity of the substrate temperature distribution, thereby improving the uniformity of the substrate thin film processing.

[0007] In order to achieve the above object, the present invention is implemented by the following technical solutions:

[0008] A base assembly comprising:

[0009] A vacuum suction cup, which has a carrying surface for carrying a substrate, an annular air groove is provided on the carrying surface, a vacuum suction hole is provided on the annular air groove, and the vacuum suction hole is connected to a vacuum source so as to absorb the substrate through the annular air groove; the vacuum suction cup is also provided with a plurality of through holes for accommodating lifting pins, and the positions of the through holes and the annular air groove do not overlap with each other;

[0010] A heating device, which is arranged below the vacuum suction cup;

[0011] Wherein, the through hole is communicated with the annular air groove via a connecting channel.

[0012] Optionally, a gas channel connected to the vacuum suction hole is provided in the vacuum suction cup, so that the annular gas groove can be evacuated through the gas channel.

[0013] Optionally, the annular air groove includes multiple circles of air dividing grooves from the inside to the outside in the radial direction, and two adjacent circles of the air dividing grooves are connected to each other.

[0014] Optionally, the vacuum suction hole is at least arranged on the relatively inner gas separation groove.

[0015] Optionally, the through hole is located at least between two gas dividing grooves in radial position.

[0016] Optionally, the through hole is connected to the annular air groove along the radial direction of the vacuum suction cup.

[0017] Optionally, the connecting channel radially penetrates one of the through holes to be in communication with at least the inner and outer gas dividing grooves of the through hole.

[0018] Optionally, the connection channels on different through holes are not completely the same.

[0019] Optionally, the connecting channel is opened on the bearing surface.

[0020] Optionally, the connecting channel is opened inside the vacuum suction cup and is connected to the gas channel.

[0021] Optionally, it further includes a connector located in the middle of the base assembly, and the gas channel is connected to the vacuum source through the connector.

[0022] Optionally, the heating device includes a heating wire, and the heating wire is arranged around the outside of the connector.

[0023] Optionally, the heating device further includes a heating rod, and the heating rod is arranged in the middle of the base assembly.

[0024] Optionally, the heating wires are distributed along the circumferential direction, and the heating rod is arranged in a central area of ​​an area surrounded by the heating wires.

[0025] Optionally, a thin film deposition device comprises:

[0026] A vacuum reaction chamber is provided with the aforementioned base assembly.

[0027] Optionally, one side of the vacuum reaction chamber has a gas circulation portion, and a first connecting channel of a through hole close to the gas circulation portion among the multiple through holes is only connected between the through hole and an annular gas groove outside the through hole; a second connecting channel of a through hole far from the gas circulation portion among the multiple through holes is at least connected between the through hole and an annular gas groove inside the through hole.

[0028] Optionally, the cross-sectional area of ​​the first connecting channel is smaller than the cross-sectional area of ​​the second connecting channel.

[0029] Optionally, the gas circulation portion is a film transmission port, a vacuum pump port, or a reaction chamber air inlet.

[0030] Optionally, a vacuum suction cup comprises:

[0031] A carrying surface for carrying a substrate, wherein an annular air groove is provided on the carrying surface, and a vacuum suction hole is provided on the annular air groove so as to absorb the substrate through the annular air groove;

[0032] A plurality of through holes for accommodating lifting pins, wherein the through holes and the annular air groove are arranged at positions that do not overlap with each other;

[0033] A connecting channel is connected between the through hole and the annular gas groove, so that the through hole and the annular gas groove are connected, so that the annular gas groove can extract the retained gas in the through hole through the connecting channel.

[0034] Compared with the prior art, the present invention has the following advantages:

[0035] In a base assembly and a thin film deposition device thereof of the present invention, the base assembly transports the gas carrying heat in the through hole to the annular gas groove through a connecting channel to evacuate the high-temperature gas gathered in the through hole, thereby reducing the temperature of the through hole area, and then reducing the temperature of the substrate area corresponding to the through hole, which helps to improve the uniformity of the substrate temperature distribution, and then improve the uniformity of the substrate film processing; at the same time, since the annular gas groove is a circumferentially distributed gas groove opened on the bearing surface of the vacuum suction cup, the gas gathered in the through hole will diffuse circumferentially and contact the back of the substrate after being introduced into the annular gas groove, which helps to increase the uniformity of the circumferential temperature distribution of the substrate. On the other hand, the present invention makes the setting position of the annular gas groove and the through hole not overlap, which can improve the uniformity of the circumferential pressure distribution of the annular gas groove, and then improve the uniformity of the gas flow, which helps to ensure the stability of vacuum adsorption and the uniformity of the circumferential temperature of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0037] Figure 1 A schematic diagram of a thin film deposition device of the present invention;

[0038] Figure 2 is a schematic diagram of an Rs map of a substrate deposited by an existing thin film deposition device;

[0039] Figure 3 is a schematic diagram of a bearing surface of a vacuum suction cup of the present invention;

[0040] Figure 4 is a schematic diagram of an Rs map of a substrate deposited by the thin film deposition device of the present invention;

[0041] Figure 5 A schematic diagram of the Rs map of a substrate deposited by a thin film deposition device without a heating rod;

[0042] Figure 6 Schematic diagram of the Rs map of a substrate deposited by a thin film deposition device equipped with a heating rod. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0044] It should be noted that the drawings are all in very simplified form and use inaccurate ratios, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention.

[0045] like Figure 1 , which is a schematic diagram of a thin film deposition device (chemical vapor deposition device CVD) of the present invention, the device includes a vacuum reaction chamber 100, and the vacuum reaction chamber 100 can be used to process one or more substrates W, including depositing materials on the upper surface of the substrate W. A film transfer port is provided on the vacuum reaction chamber 100 to facilitate the transfer of the substrate W between the inside and outside of the vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a gas shower head 110 disposed above the inside of the vacuum reaction chamber 100, and the gas shower head 110 is connected to a gas supply device 120 to transport the process gas in the gas supply device 120 into the vacuum reaction chamber 100. For example, the process gas may include at least one of WF6, H2 and B2H6. The vacuum reaction chamber 100 also includes a base assembly 130 disposed opposite to the gas shower head 110, and the base assembly 130 is supported by a support shaft 136. The base assembly 130 includes a vacuum chuck 131 and a base 132 located below the vacuum chuck 131. The vacuum chuck 131 has a carrying surface for carrying the substrate W, and an adsorption electrode is provided in the vacuum chuck 131, and the adsorption electrode is connected to a DC power supply, and the DC power supply is used to make the adsorption electrode generate an electrostatic adsorption force on the substrate W. A heating device 133 is provided in the base 132, and the heating device 133 is located below the vacuum chuck 131. When performing a vapor deposition process, the gas shower head 110 introduces a process gas into the vacuum reaction chamber 100, and the heating device 133 provides heat energy for the substrate W carried by the vacuum chuck 131 to make it reach a preset temperature, so that the process gas reacts on the surface of the substrate W to form a thin film.

[0046] In practical applications, in order to facilitate the wafer transfer operation, a plurality of through holes 134 penetrating the upper and lower surfaces of the vacuum chuck 131 and the base 132 may be provided. The through holes 134 are used to accommodate lifting pins 135. The top of each lifting pin 135 may contact the back of the substrate W carried by the vacuum chuck 131. The bottom of the lifting pin 135 is connected to the first driving device, and the first driving device is used to control the lifting and lowering of the lifting pin 135, so as to achieve contact with the substrate W. When the process is completed and the wafer needs to be transferred, the lifting pin 135 is driven to rise by the first driving device, so that the top of the lifting pin 135 protrudes from the upper surface of the vacuum chuck 131, so that the substrate W is separated from the carrying surface, so that the substrate W is transferred out of the vacuum reaction chamber 100 from the wafer transfer port. After the wafer transfer is completed, the lifting pin 135 is driven to fall by the first driving device, so that the top of the lifting pin 135 is lower than or level with the carrying surface of the vacuum chuck 131. The aperture of the through hole 134 is slightly larger than the outer diameter of the lifting pin 135 to prevent the lifting pin 135 from contacting and rubbing against the side wall of the through hole 134 to cause particle contamination.

[0047] Further, such as Figure 1 As shown, the base assembly 130 is supported by a support shaft 136. Usually, the support shaft 136 is connected to the central area of ​​the base 132, and of course it can also be connected to other areas of the base 132. In practical applications, the support shaft 136 can be set to be liftable or non-liftable according to needs. When the support shaft 136 is set to be liftable, the support shaft 136 is connected to the second driving device, and the second driving device is used to drive the support shaft 136 to rise and fall, thereby driving the base assembly 130 to rise and fall. Before the process is carried out, the support shaft 136 is controlled to rise and fall by the second driving device so that the base assembly 130 is located at the film transfer position, and the substrate W is clamped by the robot to be transferred from the film transfer port into the vacuum reaction chamber 100, and is placed on the bearing surface of the base assembly 130. Then the second driving device is used to make the base assembly 130 reach the reaction position so as to carry out the process. After the process is completed, the base assembly 130 is adjusted to the film transfer position by the second driving device so that the robot can take the film. A connector (not shown) is disposed inside the support shaft 136 , and the connector is connected to the vacuum suction cup 131 , so that electrical and gas transmission pipelines connected to the vacuum suction cup 131 are disposed therein.

[0048] The uniformity of thin film deposition is a very important indicator in the processing of substrate W. In practical applications, the uniformity of the distribution of the temperature field and the gas flow field in the chamber during the process has an important influence on the deposition process. However, in the existing thin film deposition device, the vacuum suction cup 131 is usually provided with a through hole 134 to facilitate the movement of the lifting pin 135. The vacuum suction cup 131 is provided with a vacuum suction hole 139, which is connected to a vacuum source (not shown). The vacuum suction hole 139 is arranged on the annular gas groove 137 on the bearing surface of the vacuum suction cup 131, and the substrate W is vacuumed through the annular gas groove 137. The through hole 134 has an internal volume and there is gas stored. The through hole 134 cannot be arranged on the annular gas groove 137 to avoid the interruption of the circumferential conduction of the vacuum force of the annular gas groove 137 evacuated by the internal volume of the through hole 134, thereby causing the vacuum adsorption force to be unstable and uneven, resulting in the problem of uneven adsorption stress of the substrate W. Furthermore, the annular air groove 137 helps to form a vacuum air path with uniform pressure and temperature by uniformly forming an adsorption negative pressure thereon, and as a heat conduction medium, it is beneficial to the uniformity of temperature distribution on the supporting surface and even on the substrate W.

[0049] However, during the process, gas is easily gathered in the through hole 134. Due to the influence of the heating device 133, the temperature of the gas gathered in the through hole 134 will increase over time, and the thermal conductivity of the gas is poor, resulting in a local high-temperature area. As a result, the temperature of the substrate W area corresponding to the through hole 134 is different from the temperature of other areas on the substrate W, affecting the uniformity of the temperature field distribution of the substrate W, thereby affecting the quality of thin film deposition.

[0050] like Figure 2 FIG. 1 is a schematic diagram of Rsmap (resistance distribution map) after a substrate W is subjected to thin film deposition by an existing thin film deposition device in one embodiment. The base assembly 130 of the thin film deposition device is provided with three through holes 134 to accommodate lifting pins 135 respectively. Figure 2 The resistance increases from the left area to the center area, that is, the film thickness becomes thinner. Figure 2 It can be seen that the thickness of the thin film deposition at the positions corresponding to the three through holes 134 of the substrate W is greater than that at other positions. This is because more heat is accumulated in the through holes 134, which makes the temperature of the substrate W area corresponding to the through holes 134 higher, and then the thin film deposition speed in this area is faster, so that the film thickness in this area is higher, resulting in uneven film growth thickness of the substrate W.

[0051] Based on the above problems, the present invention improves the base assembly 130, which at least partially discharges the high-temperature gas gathered in the through hole 134 through the connecting channel 138, and reduces its heat storage capacity by extracting and thinning the gas stored in the through hole 134, thereby avoiding excessive heat accumulation in the through hole 134, thereby improving the uniformity of the temperature field distribution of the substrate W, thereby improving the uniformity of thin film deposition on the surface of the substrate W.

[0052] Specifically, Figure 3 As shown, an annular gas groove 137 is provided on the bearing surface of the vacuum chuck 131, and the annular gas groove 137 and the through hole 134 are not arranged at the same position; wherein the through hole 134 and the annular gas groove 137 are connected through a connecting channel 138. In practical applications, the high-temperature gas gathered in the through hole 134 will be transported to the annular gas groove 137 through the connecting channel 138 to reduce the heat accumulation in the through hole 134 area, thereby reducing the temperature of the substrate W area corresponding to the through hole 134, and improving the uniformity of the temperature field distribution of the substrate W; at the same time, since the annular gas groove 137 is a circumferentially distributed gas groove opened on the bearing surface of the vacuum chuck 131, the gas gathered in the through hole 134 will diffuse in the circumferential direction and contact with the back of the substrate W after being introduced into the annular gas groove 137, which helps to increase the uniformity of the circumferential temperature distribution of the substrate W. On the other hand, in order to avoid the wear of the lifting pin 135, the through hole 134 is usually set to a larger aperture. If the annular air groove 137 and the through hole 134 are set at the same position, for the annular air groove 137, the large-aperture through hole 134 that penetrates the base assembly 130 is equivalent to a larger flow resistance on its circumferential flow guide path. This flow resistance will cause the pressure distribution at the overlapping position of the two to be different from the pressure at other positions in the same circumferential direction, thereby causing the circumferential pressure distribution of the annular air groove 137 to be uneven, affecting the uniformity of its adsorption stress distribution and temperature distribution. In the present application, the annular air groove 137 and the through hole 134 are set at different positions, which can improve the uniformity of the circumferential pressure distribution of the annular air groove 137, thereby improving the uniformity of the adsorption stress distribution, and helping to ensure the uniformity of the circumferential temperature of the substrate W.

[0053] In addition, since the through hole 134 is not arranged on the main flow path of the annular air groove 137, but is attached to the main flow path of the annular air groove 137 as a branch through the connecting channel 138, it has little effect on the vacuum pressure distribution of the annular air groove 137 itself, thereby also ensuring the uniformity of the distribution of the vacuum adsorption force.

[0054] like Figure 4 FIG. 1 is a schematic diagram of an Rs map after a substrate W is subjected to thin film deposition by a thin film deposition apparatus of the present invention in one embodiment. Three through holes 134 are provided in a base assembly 130 of the thin film deposition apparatus to accommodate lifting pins 135 respectively. The process conditions of the substrate W during thin film deposition are as follows: Figure 2 The same as in. Figure 4It can be seen that the present invention can effectively improve the film distribution of the substrate W area corresponding to the through hole 134 by introducing the high-heat gas gathered in the through hole 134 into the annular gas groove 137 through the connecting channel 138, and significantly improve the uniformity of the film deposition along the circumferential direction of the substrate W. Simple improvements can significantly improve the uniformity of the temperature distribution of the substrate W, and the overall cost is low. Therefore, this method effectively improves the temperature distribution on the substrate W, which helps to improve the uniformity of the film deposition on the substrate W. On the other hand, considering that the structure may increase the probability of gas leakage from the front of the substrate W to the back of the substrate W, thereby affecting the adsorption capacity of the substrate W, we conducted UPC flow tests on the vacuum suction cup 131 with a connecting channel 138 and the vacuum suction cup 131 without a connecting channel 138. The test shows that there is no obvious difference in the pressure conditions of the two vacuum suction cups 131.

[0055] Furthermore, a gas channel (not shown) connected to the annular gas groove 137 is opened in the vacuum suction cup 131, so that the vacuum source can evacuate the annular gas groove 137 through the gas channel, and the negative pressure provided by the vacuum source is transmitted to the through hole 134 through the annular gas groove 137 and the connecting channel 138, so as to at least partially extract the high-temperature gas in the through hole 134. The high-temperature gas quickly diffuses and dilutes circumferentially along the annular gas groove 137, thereby eliminating the high-temperature hot spot area and making the heat evenly distributed circumferentially.

[0056] Optionally, the annular gas groove 137 may be a circle of gas grooves, or may include multiple circles of gas dividing grooves. When it includes multiple circles of gas dividing grooves, at least two circles of gas dividing grooves may be interconnected. Preferably, the annular gas groove 137 includes multiple circles of gas dividing grooves from the inside to the outside in the radial direction, and two adjacent circles of gas dividing grooves are interconnected. Thereby, the vacuum negative pressure is smoothly transmitted between the multiple circles of gas dividing grooves. Considering that the number of vacuum suction holes 139 is limited, and during the process, the substrate W may be subjected to stress deformation and edge warping after deposition treatment, so the airflow direction of vacuum adsorption is from the edge of the substrate W to the inside. Therefore, the vacuum suction hole 139 is at least arranged on the relatively inner gas dividing groove to provide a stable adsorption force.

[0057] In one embodiment, the through hole 134 is located at least between two gas dividing grooves in radial direction, so that the adsorption force covers the through hole 134 area.

[0058] For example, due to the connection between the base 132 and the connecting shaft, the heating device 133 usually avoids the connection area (generally the center of the base 132) when being set, which causes the temperature of the substrate W area corresponding to the connection area to be significantly lower than that of other areas, that is, the temperature of the central area of ​​the substrate W is usually lower than that of its edge area.

[0059] Based on this, Figure 3As shown, in one embodiment, an annular air groove 137 including three air dividing grooves is opened on the bearing surface of the vacuum suction cup 131, and the three air dividing grooves are an outer ring air groove, a middle air groove and an inner ring air groove, and the three are interconnected.

[0060] Since the temperature in the central area is relatively low, multiple vacuum suction holes 139 are evenly opened in the circumferential direction on the inner ring gas distribution groove to facilitate vacuuming by the vacuum source. During the process, the pressure gradients in the circumferential direction of a single gas distribution groove are the same or similar, and a pressure gradient in the radial direction is formed between the three gas distribution grooves. The pressure in the outer ring gas groove is greater than that in the inner ring gas groove, and the vacuuming airflow flows in the direction of the outer ring gas groove, the middle gas groove and the inner ring gas groove. Since the temperature in the edge area of ​​the substrate W is greater than that in its central area, the airflow in the outer ring gas groove will also transport part of the heat in its corresponding area to the central area along with the airflow, which can reduce the heat in the edge area and increase the heat in the direction of the central area, which helps to improve the uniformity of the temperature field of the substrate W.

[0061] Furthermore, in order to enhance the gas delivery efficiency between the through hole 134 and the annular gas groove 137, that is, to increase the heat transfer efficiency, the through hole 134 and the annular gas groove 137 can be connected along the radial direction of the vacuum suction cup 131, that is, the connecting channel 138 is arranged along the radial direction of the vacuum suction cup 131, so that the connecting channel 138 is located in the pressure gradient direction of the annular gas groove 137, thereby improving its gas delivery efficiency and helping to reduce the temperature response time; at the same time, relative to the same circle of gas grooves, the connecting channel 138 is arranged in the radial direction, which can also make the delivery distance between the gas groove and the through hole 134 the shortest, further improving the gas delivery efficiency. Of course, in actual applications, the setting mode of the connecting channel 138 is not limited to the above, and can also be set to other forms according to actual needs, and the present invention does not limit this. For example, in another embodiment, there is an angle between the connecting channel 138 and the radial direction, and the angle is between 0 and 90 degrees.

[0062] Further, such as Figure 3 As shown, in actual applications, a plurality of through holes 134 may be provided on the vacuum suction cup 131. According to application requirements and application scenarios, the connection channels 138 connected to different through holes 134 may be different. It is understood that the same here means that the parameters of the various features of the connection channels 138 are the same, such as the values ​​of the cross-sectional area, channel width, channel length and other features.

[0063] For example, in one embodiment, since the gas flow changes faster at the positions such as the film transfer port, the vacuum pump port, or the reaction chamber air inlet than at other areas of the vacuum reaction chamber 100, such areas are set as gas circulation parts. Due to the difference in heat exchange rate, the temperature of the position of the substrate W close to the gas circulation part rises slowly, forming a cold zone, such as Figure 2The right area has a high resistivity, which means that the deposited layer is relatively thin and the temperature is low. It can be understood that the gas flow portion represents the sum of external factors that cause the temperature on one side of the substrate W to be low due to other structures and conditions in the reaction chamber other than the susceptor assembly 130 and the temperature difference of the substrate W.

[0064] In order to increase the temperature of the substrate W near the gas circulation part, the cross-sectional area of ​​the connecting channel 138 connected to the through hole 134 near the gas circulation part is defined as D1, and the cross-sectional area of ​​the connecting channel 138 connected to the through hole 134 away from the gas circulation part is defined as D2, so that D1 is smaller than D2, so as to reduce the flow efficiency of the gas in the through hole 134 near the gas circulation part to the annular gas groove 137, thereby reducing the dilution and dispersion of the high-temperature gas gathered in the through hole 134, so as to keep the temperature near the gas circulation part at a high level to compensate for the heat loss caused by the gas circulation part, so as to improve the circumferential temperature uniformity of the substrate W.

[0065] like Figure 3 As shown, in one embodiment, the through hole 134 is arranged between the outer ring gas groove and the middle gas groove, and the through hole 134 can be connected with the outer ring gas groove and / or the middle gas groove through the connecting channel 138. In one embodiment, the connecting channel 138 radially penetrates a through hole 134 to at least communicate with the inner and outer gas grooves of the through hole 134, so as to obtain the maximum vacuuming efficiency of the through hole 134, so that the temperature of the through hole 134 area is consistent with the temperature of the annular gas groove 137 area.

[0066] In practical applications, the gas distribution groove connected to the through hole 134 can be selected according to actual needs. For example, when the temperature of the central area of ​​the substrate W is low due to various factors, the through hole 134 can be preferentially connected to the gas distribution groove close to the central area of ​​the substrate W, so that the heat carried by the gas in the through hole 134 is preferentially transferred to the central area of ​​the substrate W to compensate for the temperature difference in this area, thereby improving the uniformity of the temperature field of the substrate W.

[0067] For example, in another case, the temperature of the substrate W region corresponding to the gas circulation part is usually low, so the through hole 134 in this region can be connected only to the outer ring gas groove near the gas circulation part through the connecting channel 138. On the one hand, since the pressure gradient is larger in the outer circle and smaller in the inner circle, the connecting channel 138 is only connected to the outer ring gas groove near the gas circulation part to minimize the suction of the high-temperature gas in the through hole 134, thereby maintaining a high temperature in the through hole 134 region to compensate for the heat loss caused by the gas circulation part. On the other hand, the extracted high-temperature gas first flows through the outer ring gas groove near the gas circulation part, which also makes up for the temperature difference in this region. Thereby, the temperature uniformity of the substrate W in the circumferential direction is improved.

[0068] For example, in another situation, it is necessary to guide the gas carrying heat in the through hole 134 away as quickly as possible. In this case, the through hole 134 and the inner circle gas groove closest to the through hole 134 can be connected through the connecting channel 138 to guide the gas in the through hole 134 out as quickly as possible; or the connecting channel 138 can be made to radially penetrate the through hole 134, that is, the connecting channel 138 penetrates the through hole 134 and is connected to the two gas grooves, so as to quickly transport the gas carrying heat in the through hole 134 to the two gas grooves respectively, thereby improving the gas transportation efficiency and shortening the temperature response time.

[0069] On the other hand, Figure 3 As shown, in this embodiment, the connecting channel 138 is opened on the bearing surface. During the process, the gas in the connecting channel 138 contacts the back of the substrate W. This method helps to reduce the temperature difference of the substrate W along the radial direction, and helps to improve the uniformity of the temperature distribution of the substrate W. On the other hand, in terms of the difficulty of processing, it is less difficult and more feasible to process the connecting channel 138 on the bearing surface, which helps to reduce the processing cost. Of course, in actual applications, the connecting channel 138 can also be opened inside the vacuum chuck 131, and the present invention does not limit it.

[0070] On the other hand, in order to heat the substrate W, the heating device 133 includes a heating wire 1331. The heating wire 1331 is arranged in the base 132, and has a simple structure, a small thickness, and occupies a small space, which is conducive to improving the space utilization efficiency in the cavity, and it is also convenient for the lifting pin 135 to pass through the base 132 to achieve lifting.

[0071] Due to the problem of the connection between the support shaft 136 and the base 132 and the connector located in the middle of the base assembly 130, the heating wire 1331 winding cannot pass through the middle area between the two, causing the area to become a cold spot, thereby causing the deposition of a thin film in the substrate W area corresponding to the area. In actual applications, the connector is usually located in the center of the area surrounded by the heating wire 1331.

[0072] Based on the above, in order to further improve the uniformity of the temperature field of the substrate W, in the present invention, the heating device 133 further includes a heating rod 1332 , and the heating rod 1332 is disposed in the middle of the base assembly 130 .

[0073] Optionally, the heating wires 1331 are distributed along the circumferential direction, and the heating rods 1332 are arranged in the central area of ​​the area surrounded by the heating wires 1331. In the present invention, by adding the heating rods 1332, the differences in heating of each area by the heating wires 1331 can be compensated, thereby improving the uniformity of heating the substrate W, helping to ensure the uniformity of temperature distribution on the substrate W, and thus ensuring the quality of thin film deposition.

[0074] Optionally, the range of the central area is the area of ​​0-20% from the center to the edge of the area surrounded by the heating wire 1331. Of course, the central area can also be other numerical ranges, and the present invention is not limited to this. For example, Figure 5 and Figure 6 As shown in the figure, there are Rs map schematic diagrams of the substrate W thin film after treatment without and with the heating rod 1332, respectively. The process conditions of the substrate W thin film treatment are the same for both. Figure 6 In the embodiment of the present invention, the heating rod 1332 is disposed in an area 15% from the center to the edge of the area surrounded by the heating wire 1331 to compensate for the temperature difference of the substrate W in the area.

[0075] On the other hand, the present invention does not limit the power range of the heating wire 1331, that is, the temperature range of the heating wire 1331 is not limited, and can be set according to actual process goals and site conditions. Similarly, the present invention does not limit the power range / temperature range of the heating rod 1332, and in actual applications, it can be adjusted according to needs.

[0076] In one embodiment, a thin film deposition device includes: a vacuum reaction chamber 100, in which the aforementioned base assembly 130 is disposed, and a gas circulation portion is provided on one side of the vacuum reaction chamber 100, and a connecting channel 138 of a through hole close to the gas circulation portion among a plurality of through holes 134 is only connected between the through hole and the annular gas groove outside the through hole; a connecting channel 138 of a through hole far from the gas circulation portion among a plurality of through holes is at least connected between the through hole and the annular gas groove inside the through hole. To compensate for the heat loss caused by the gas circulation portion, and by efficiently extracting the high-temperature gas in the through hole far from the gas circulation portion, the gas is directed to the side close to the gas circulation portion through the annular gas groove to further compensate for the regional temperature difference. Thereby, the temperature uniformity of the substrate W in the circumferential direction is improved.

[0077] The present invention further proposes a vacuum suction cup 131, comprising: a carrying surface for carrying a substrate, an annular air groove 137 is provided on the carrying surface, and a vacuum suction hole 139 is provided on the annular air groove 137 to absorb the substrate W through the annular air groove 137; a plurality of through holes 134 for accommodating lifting pins, and the positions of the through holes 134 and the annular air groove 137 do not overlap with each other; a connecting channel 138, and the connecting channel 138 is connected between the through holes 134 and the annular air groove 137 to make the through holes 134 and the annular air groove 137 conductive, so that the annular air groove 137 can extract the retained gas in the through holes 134 through the connecting channel 138, thereby improving the uniformity of the circumferential temperature of the substrate W, thereby improving the deposition uniformity.

[0078] In summary, in a base assembly 130 and a thin film deposition device thereof of the present invention, the base assembly 130 transports the gas carrying heat in the through hole 134 to the annular gas groove 137 through the connecting channel 138 to evacuate the high-temperature gas gathered in the through hole 134, thereby reducing the temperature of the through hole 134 area, and then reducing the temperature of the substrate W area corresponding to the through hole 134, which helps to improve the uniformity of the temperature distribution of the substrate W, and then improve the uniformity of the thin film processing of the substrate W; at the same time, since the annular gas groove 137 is a circumferentially distributed gas groove opened on the bearing surface of the vacuum suction cup 131, the gas gathered in the through hole 134 will diffuse in the circumferential direction after being introduced into the annular gas groove 137 and contact the back of the substrate W, which helps to increase the uniformity of the circumferential temperature distribution of the substrate W. On the other hand, the present invention makes the setting positions of the annular gas groove 137 and the through hole 134 not overlap, which can improve the uniformity of the circumferential pressure distribution of the annular gas groove 137, thereby improving the uniformity and stability of the vacuum adsorption force, and helping to ensure the uniformity of the circumferential temperature of the substrate W.

[0079] It should be noted that, in this article, "inside" and "outside" are radial positional relationships, with reference to the central axis of the base assembly; the terms "include", "comprise", "have" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "include..." or "comprise..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

[0080] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A base assembly, characterized in that: Include: A vacuum suction cup, which has a carrying surface for carrying a substrate, an annular air groove is provided on the carrying surface, a vacuum suction hole is provided on the annular air groove, and the vacuum suction hole is connected to a vacuum source so as to absorb the substrate through the annular air groove; the vacuum suction cup is also provided with a plurality of through holes for accommodating lifting pins, and the positions of the through holes and the annular air groove do not overlap with each other; A heating device, which is arranged below the vacuum suction cup; The through hole is connected to the annular air groove via a connecting channel, so that the stored air in the through hole can be at least partially extracted through the annular air groove.

2. The base assembly according to claim 1, characterized in that A gas passage connected with the vacuum suction hole is provided in the vacuum suction cup so as to evacuate the annular gas groove through the gas passage.

3. The base assembly according to claim 1, wherein: The annular gas groove includes multiple circles of gas dividing grooves from the inside to the outside in the radial direction, and two adjacent circles of the gas dividing grooves are connected to each other.

4. The base assembly according to claim 3, characterized in that The vacuum suction hole is at least arranged on the relatively inner gas separation groove.

5. The base assembly according to claim 3, characterized in that The through hole is located at least between two gas dividing grooves in radial position.

6. The base assembly according to claim 1, wherein: The through hole is communicated with the annular air groove along the radial direction of the vacuum suction cup.

7. The base assembly according to claim 5, characterized in that The connecting channel radially penetrates one of the through holes to be in communication with at least the inner and outer gas dividing grooves of the through hole.

8. The base assembly according to claim 1, wherein: The connection channels on different through holes are not completely the same.

9. The base assembly according to claim 1, wherein: The connecting channel is opened on the bearing surface.

10. The base assembly according to claim 2, wherein: The connecting channel is opened inside the vacuum suction cup and communicated with the gas channel.

11. The base assembly according to claim 2, wherein: The utility model also comprises a connector located in the middle of the base assembly, and the gas channel is communicated with a vacuum source through the connector.

12. The base assembly according to claim 11, wherein: The heating device comprises a heating wire, and the heating wire is arranged around the outside of the connector.

13. The base assembly of claim 12, wherein: The heating device also includes a heating rod, which is arranged in the middle of the base assembly.

14. The base assembly of claim 13, wherein: The heating wires are distributed along the circumferential direction, and the heating rod is arranged in the central area of ​​the area surrounded by the heating wires.

15. A thin film deposition device, characterized in that: Include: A vacuum reaction chamber, wherein a base assembly as claimed in any one of claims 1 to 14 is arranged.

16. The thin film deposition device according to claim 15, characterized in that: One side of the vacuum reaction chamber is provided with a gas circulation portion, and a first connecting channel of a through hole close to the gas circulation portion among the plurality of through holes is only connected between the through hole and an annular gas groove outside the through hole; a second connecting channel of a through hole far from the gas circulation portion among the plurality of through holes is at least connected between the through hole and an annular gas groove inside the through hole.

17. The thin film deposition device according to claim 16, wherein: The cross-sectional area of ​​the first connecting channel is smaller than the cross-sectional area of ​​the second connecting channel.

18. The thin film deposition device according to claim 16 or 17, characterized in that: The gas circulation part is a film transmission port, a vacuum pump port or a reaction chamber air inlet.

19. A vacuum suction cup, characterized in that: Include: A carrying surface for carrying a substrate, wherein an annular air groove is provided on the carrying surface, and a vacuum suction hole is provided on the annular air groove so as to absorb the substrate through the annular air groove; A plurality of through holes for accommodating lifting pins, wherein the through holes and the annular air groove are arranged at positions that do not overlap with each other; A connecting channel is connected between the through hole and the annular gas groove, so that the through hole and the annular gas groove are connected, so that the annular gas groove can extract the retained gas in the through hole through the connecting channel.

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