A multi-Micro-LED chip package and preparation method thereof

Abstract

The present invention relates to a multi-Micro-LED chip package and a preparation method thereof, and to the field of semiconductor display technology. In the preparation method of the multi-Micro-LED chip package of the present invention, by optimizing the preparation process of the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the surface of each zirconium oxide passivation layer is a rough structure, and then when each metal layer is subsequently formed, the bonding performance of the two can be effectively improved, and then the peeling of each metal layer can be effectively avoided, and by forming the first metal layer, the second metal layer and the third metal layer, multiple conductive paths are provided between each Micro-LED chip and the second electrode. In the subsequent use process, even if a certain conductive path is broken, this does not hinder the normal use of each Micro-LED chip.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor light emitting technology, and in particular to a multi-Micro-LED chip package and a preparation method thereof. Background Art

[0002] The core structure of the Micro-LED chip is a pn junction formed by a p-type semiconductor layer and an n-type semiconductor layer. When a forward voltage is applied to the Micro-LED chip, electrons and holes are injected into the quantum well region from the n-type semiconductor layer and the p-type semiconductor layer through the electrodes, and recombine and emit light in the quantum well region. Micro-LED display technology is to miniaturize and matrix the micro-light-emitting diodes, and directly use each Micro-LED chip as a display pixel point as the basic unit of imaging to achieve image display. Micro-LED chip packaging technology is a crucial part of Micro-LED display technology, which directly affects the performance and reliability of Micro-LED display screens. How to improve the packaging process of Micro-LED chips has attracted widespread attention. Summary of the invention

[0003] The object of the present invention is to overcome the above-mentioned deficiencies of the prior art and provide a multi-Micro-LED chip package and a preparation method thereof.

[0004] To achieve the above object, the present invention provides a method for preparing a multi-Micro-LED chip package, and the method for preparing the multi-Micro-LED chip package comprises the following steps:

[0005] A light-emitting wafer is provided. The light-emitting wafer includes a first semiconductor layer, a light-emitting quantum well layer and a second semiconductor layer.

[0006] The light-emitting wafer is cut into pieces to form a plurality of Micro-LED units.

[0007] A carrier substrate is provided, and M of the Micro-LED units are transferred to the carrier substrate, where M≥6.

[0008] Then, the carrier substrate is placed in an ALD chamber, and a zirconium source gas, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber. Then, a reaction gas composed of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a first zirconium oxide passivation layer having a rough surface, wherein the first zirconium oxide passivation layer covers the upper surface and the side surface of each of the Micro-LED units.

[0009] Then, a first metal layer is formed on the first zirconium oxide passivation layer.

[0010] Then, the carrier substrate is placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are circulated in the ALD chamber in sequence to form a second zirconium oxide passivation layer with a rough surface, wherein the second zirconium oxide passivation layer covers the first metal layer.

[0011] Then, a second metal layer is formed on the second zirconium oxide passivation layer.

[0012] Then, the carrier substrate is placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are circulated in the ALD chamber in sequence to form a third zirconium oxide passivation layer with a rough surface, and the third zirconium oxide passivation layer covers the second metal layer.

[0013] Then, a third metal layer is formed on the third zirconium oxide passivation layer.

[0014] Then, a first electrode and a second electrode are formed, wherein the first electrode is electrically connected to the first semiconductor layer of the Micro-LED unit, and the second electrode is electrically connected to the first metal layer, the second metal layer, and the third metal layer.

[0015] The carrier substrate is removed, and a conductive layer is formed on the second semiconductor layer. The second semiconductor layer is electrically connected to the first metal layer, the second metal layer, and the third metal layer through the conductive layer.

[0016] As a preferred technical solution, in the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the zirconium source gas is one of zirconium tetra-tert-butoxide, zirconium chloride, and zirconium iodide, and the organic sealing agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0017] As a preferred technical solution, in the process of forming the first zirconia passivation layer, the second zirconia passivation layer and the third zirconia passivation layer, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

[0018] As a preferred technical solution, the method of forming the first metal layer, the second metal layer and the third metal layer is one of magnetron sputtering, thermal evaporation and electron beam evaporation, and the material of the first metal layer, the second metal layer and the third metal layer is one or more of copper, aluminum, silver, titanium and palladium.

[0019] As a preferred technical solution, the surface roughness of the second zirconia passivation layer is greater than that of the first zirconia passivation layer, and the surface roughness of the third zirconia passivation layer is greater than that of the second zirconia passivation layer.

[0020] As a preferred technical solution, the thickness of the first zirconia passivation layer is greater than the thickness of the second zirconia passivation layer, and the thickness of the first zirconia passivation layer is greater than the thickness of the third zirconia passivation layer.

[0021] As a preferred technical solution, the thickness of each of the first metal layer, the second metal layer and the third metal layer is less than the thickness of the first zirconia passivation layer, and is greater than the thickness of the second zirconia passivation layer and / or the thickness of the third zirconia passivation layer.

[0022] As a preferred technical solution, a first opening exposing the first semiconductor layer is formed on each of the Micro-LED units, an insulating layer is first formed on the sidewall of the first opening, and then the first electrode is formed in the first opening.

[0023] As a preferred technical solution, a second opening exposing the first zirconium oxide passivation layer is formed on one of the M Micro-LED units, the sidewall of the second opening exposes the first metal layer, the second metal layer and the third metal layer, and a second electrode is formed in the second opening.

[0024] The present invention also provides a method for preparing a multi-Micro-LED chip package, which is manufactured using the above-mentioned method for preparing a multi-Micro-LED chip package.

[0025] The beneficial effects of the present invention are:

[0026] In the preparation method of the multi-Micro-LED chip package of the present invention, zirconium oxide is used as the passivation layer of the Micro-LED chip. Since zirconium oxide has a high density, the Micro-LED chip can be more effectively protected. By optimizing the preparation process of the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the surface of each zirconium oxide passivation layer is a rough structure, and when each metal layer is subsequently formed, the bonding performance of the two can be effectively improved, and the peeling of each metal layer can be effectively avoided. Due to the presence of the uneven rough structure, the interface area between the first metal layer and the first zirconium oxide passivation layer is greatly increased. When the Micro-LED chip emits light, the light irradiated to the interface can be reflected multiple times and then emitted from the light-emitting surface of the Micro-LED chip, thereby greatly improving the light-emitting efficiency of the Micro-LED chip. In the present application, due to the presence of the first metal layer, the second metal layer and the third metal layer, multiple conductive paths are provided between each Micro-LED chip and the second electrode. In the subsequent use process, even if a conductive path is broken, it does not hinder the normal use of each Micro-LED chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Shown is a schematic structural diagram of a light-emitting wafer in an embodiment of the present invention.

[0028] Figure 2 It is a schematic diagram showing a structure of forming multiple Micro-LED units in an embodiment of the present invention.

[0029] Figure 3 It is a schematic diagram of the structure of transferring M Micro-LED units to a carrier substrate in an embodiment of the present invention.

[0030] Figure 4 It is a schematic diagram showing the structure of forming a first zirconium oxide passivation layer, a first metal layer, a second zirconium oxide passivation layer, a second metal layer, a third zirconium oxide passivation layer and a third metal layer in an embodiment of the present invention.

[0031] Figure 5 It is a schematic diagram showing the structure of forming the first electrode and the second electrode in an embodiment of the present invention.

[0032] Figure 6 It is a schematic diagram showing the structure of forming a conductive layer in an embodiment of the present invention. DETAILED DESCRIPTION

[0033] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thoroughly and comprehensively understood.

[0034] like Figure 1 to Figure 6 As shown, this embodiment provides a method for preparing a multi-Micro-LED chip package, and the method for preparing a multi-Micro-LED chip package comprises the following steps:

[0035] like Figure 1 As shown, a light-emitting wafer is provided, which includes a first semiconductor layer 101 , a light-emitting quantum well layer 102 and a second semiconductor layer 103 .

[0036] In a specific embodiment, the first semiconductor layer 101, the light-emitting quantum well layer 102 and the second semiconductor layer 103 are formed by an MOCVD process, wherein the first semiconductor layer 101 and the second semiconductor layer 103 are gallium nitride layers with different doping types, specifically, the first semiconductor layer 101 is a silicon-doped n-type gallium nitride layer or a magnesium-doped p-type gallium nitride layer, and correspondingly, the second semiconductor layer 103 is a magnesium-doped p-type gallium nitride layer or a silicon-doped n-type gallium nitride layer; the quantum well layer 102 can be an InGaN quantum well layer and a GaN quantum barrier layer grown alternately.

[0037] like Figure 2 As shown, the light-emitting wafer is then cut to form a plurality of Micro-LED units 100 .

[0038] In a specific embodiment, a plurality of the Micro-LED units 100 are formed by laser cutting or mechanical cutting.

[0039] like Figure 3 As shown, a carrier substrate 200 is provided, M of the Micro-LED unit transfers 100 are moved to the carrier substrate 200 , where M≥6, and the first semiconductor 101 of each of the Micro-LED unit transfers 100 faces the carrier substrate 200 .

[0040] In a specific embodiment, the carrier substrate 200 is a rigid substrate.

[0041] like Figure 4As shown, the carrier substrate 200 is then placed in an ALD chamber, and a zirconium source gas, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber, and then a reaction gas composed of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a first zirconium oxide passivation layer 301 with a rough surface, wherein the first zirconium oxide passivation layer 301 covers the upper surface and the side surface of each of the Micro-LED units 100.

[0042] In a specific embodiment, during the formation of the first zirconium oxide passivation layer 301, the zirconium source gas is one of zirconium tetra-tert-butoxide, zirconium chloride, and zirconium iodide, and the organic sealing agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0043] In a specific embodiment, during the formation of the first zirconium oxide passivation layer 301, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

[0044] In a specific embodiment, the roughness of the rough surface of the first zirconium oxide passivation layer 301 is 0.1-0.2 micrometers.

[0045] In a specific embodiment, the temperature of the ALD chamber is maintained at 250-400°C, and the gas pressure of the ALD chamber is set to 0.5-5 torr. More specifically, the temperature of the ALD chamber can be set to 250°C, 280°C, 320°C, 350°C or 400°C, and the gas pressure of the ALD chamber can be set to 0.5 torr, 1 torr, 1.5 torr, 2 torr, 2.5 torr, 3 torr, 3.5 torr, 4 torr, 4.5 torr or 5 torr.

[0046] In a specific embodiment, the specific process of cyclically introducing zirconium source gas, cleaning gas, oxygen source gas and cleaning gas into the ALD chamber in sequence is as follows: the flow rate of zirconium source gas is 20-80sccm, the time for each introduction of zirconium source gas is 2-6 seconds, and before the introduction of cleaning gas and after the introduction of zirconium source gas is stopped, it is maintained for 1-4 seconds, and then the cleaning gas is introduced, the flow rate of cleaning gas is 1000-6000sccm, and the time for introducing cleaning gas is 10-20 seconds, then the oxygen source gas is introduced, the flow rate of oxygen source gas is 20-80sccm, the time for each introduction of oxygen source gas is 2-6 seconds, and before the introduction of cleaning gas and after the introduction of oxygen source gas is stopped, it is maintained for 1-4 seconds, and then the cleaning gas is introduced, the flow rate of the second cleaning gas is 1000-6000sccm, and the time for introducing cleaning gas is 10-20 seconds.

[0047] In a specific embodiment, the specific process of sequentially circulating the reaction gas composed of the zirconium source gas and the organic sealing agent, the cleaning gas, the oxygen source gas and the cleaning gas into the ALD chamber is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic sealing agent is 30-90 sccm, and the time of each time the reaction gas composed of the zirconium source gas and the organic sealing agent is 3-7 seconds, wherein the flow rate of the organic sealing agent accounts for 2-8% of the reaction gas composed of the zirconium source gas and the organic sealing agent, and before the cleaning gas is introduced and after the reaction gas composed of the zirconium source gas and the organic sealing agent is stopped, it is maintained for 1-4 seconds, and then the cleaning gas is introduced, and the flow rate of the third cleaning gas is 2000-7000 sccm. cm, the time for introducing the cleaning gas is 10-20 seconds, and then the oxygen source gas is introduced, the flow rate of the oxygen source gas is 30-90sccm, the time for each introduction of the oxygen source gas is 3-7 seconds, and before the introduction of the cleaning gas and after the introduction of the oxygen source gas is stopped, it is kept for 1-4 seconds, and then the cleaning gas is introduced, the flow rate of the cleaning gas is 2000-7000sccm, and the time for introducing the cleaning gas is 10-20 seconds, so as to form a first zirconia passivation layer 301 with a rough surface, the first zirconia passivation layer 301 covers the upper surface and side surfaces of each of the Micro-LED units 100, and the roughness of the rough surface of the first zirconia passivation layer 301 is 0.1-0.2 microns.

[0048] In a specific embodiment, the temperature of the ALD chamber is maintained at 280° C., and the gas pressure of the ALD chamber is set to 1.5 torr. The specific process of cyclically introducing zirconium source gas, cleaning gas, oxygen source gas and cleaning gas into the ALD chamber is as follows: the flow rate of the zirconium source gas is 50 sccm, the time for each introduction of the zirconium source gas is 4 seconds, and before the introduction of the cleaning gas and after the introduction of the zirconium source gas is stopped, it is maintained for 3 seconds, and then the cleaning gas is introduced. The flow rate of the cleaning gas is 5000 sccm, and the time for introducing the cleaning gas is 18 seconds. Then the oxygen source gas is introduced. The flow rate of the oxygen source gas is 50 sccm, and the time for each introduction of the oxygen source gas is 4 seconds, and before the introduction of the cleaning gas and after the introduction of the oxygen source gas is stopped, it is maintained for 3 seconds. Then the cleaning gas is introduced. The flow rate of the second cleaning gas is 5000 sccm, and the time for introducing the cleaning gas is 18 seconds. Then, the reaction gas composed of the zirconium source gas and the organic sealing agent, the cleaning gas, the oxygen source gas and the organic sealing agent are cyclically introduced into the ALD chamber in sequence. The specific process of the source gas and the cleaning gas is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic sealing agent is 60 sccm, and the time for each introduction of the reaction gas composed of the zirconium source gas and the organic sealing agent is 6 seconds, wherein the flow rate of the organic sealing agent accounts for 5% of the reaction gas composed of the zirconium source gas and the organic sealing agent, and before the introduction of the cleaning gas and after the introduction of the reaction gas composed of the zirconium source gas and the organic sealing agent is stopped, it is maintained for 3 seconds, and then the cleaning gas is introduced, the flow rate of the third cleaning gas is 6000 sccm, and the time for introducing the cleaning gas is 18 seconds, followed by the introduction of the oxygen source gas, the flow rate of the oxygen source gas is 60 sccm, and the time for each introduction of the oxygen source gas is 6 seconds, and before the introduction of the cleaning gas and after the introduction of the oxygen source gas is stopped, it is maintained for 3 seconds, and then the cleaning gas is introduced, the flow rate of the cleaning gas is 6000 sccm, and the time for introducing the cleaning gas is 18 seconds, and by optimizing the appropriate number of cycles, a first zirconium oxide passivation layer 301 with an appropriate thickness is formed.

[0049] like Figure 4 As shown, a first metal layer 302 is then formed on the first zirconium oxide passivation layer 301 .

[0050] In a specific embodiment, the first metal layer 302 is formed by magnetron sputtering, thermal evaporation, and electron beam evaporation, and the material of the first metal layer 302 is one or more of copper, aluminum, silver, titanium, and palladium.

[0051] In a specific embodiment, the first metal layer 302 is formed by magnetron sputtering, and the material of the first metal layer 302 is copper.

[0052] like Figure 4As shown, the carrier substrate 200 is then placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealant, a cleaning gas, an oxygen source gas, and a cleaning gas are circulated in the ALD chamber in sequence to form a second zirconium oxide passivation layer 303 with a rough surface, and the second zirconium oxide passivation layer 303 covers the first metal layer 302.

[0053] In a specific embodiment, during the formation of the second zirconium oxide passivation layer, the zirconium source gas is one of zirconium tetra-tert-butoxide, zirconium chloride, and zirconium iodide, and the organic sealing agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0054] In a specific embodiment, during the process of forming the second zirconium oxide passivation layer, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

[0055] In a specific embodiment, the roughness of the rough surface of the second zirconium oxide passivation layer 303 is 0.2-0.3 micrometers.

[0056] In a specific embodiment, the temperature of the ALD chamber is maintained at 250-400°C, and the gas pressure of the ALD chamber is set to 0.5-5 torr. More specifically, the temperature of the ALD chamber can be set to 250°C, 280°C, 320°C, 350°C or 400°C, and the gas pressure of the ALD chamber can be set to 0.5 torr, 1 torr, 1.5 torr, 2 torr, 2.5 torr, 3 torr, 3.5 torr, 4 torr, 4.5 torr or 5 torr.

[0057] In a specific embodiment, during the process of forming the second zirconium oxide passivation layer 303 with a rough surface, the specific process of sequentially circulating the reaction gas composed of the zirconium source gas and the organic sealing agent, the cleaning gas, the oxygen source gas and the cleaning gas into the ALD chamber is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic sealing agent is 40-100 sccm, and the time for each time of passing the reaction gas composed of the zirconium source gas and the organic sealing agent is 3-7 seconds, wherein the flow rate of the organic sealing agent accounts for 5-10% of the reaction gas composed of the zirconium source gas and the organic sealing agent, and before the cleaning gas is passed and after the reaction gas composed of the zirconium source gas and the organic sealing agent is stopped, it is maintained for 1-4 seconds. , and then introduce a cleaning gas, the flow rate of the third cleaning gas is 2000-7000sccm, the time for introducing the cleaning gas is 10-20 seconds, then introduce an oxygen source gas, the flow rate of the oxygen source gas is 40-100sccm, the time for each introduction of the oxygen source gas is 3-7 seconds, and before introducing the cleaning gas and after stopping the introduction of the oxygen source gas, keep it for 1-4 seconds, and then introduce a cleaning gas, the flow rate of the cleaning gas is 2000-7000sccm, and the time for introducing the cleaning gas is 10-20 seconds, so as to form a second zirconia passivation layer 303 with a rough surface, the roughness of the rough surface of the second zirconia passivation layer 303 is 0.2-0.3 microns.

[0058] In a more specific embodiment, the specific preparation process of the second zirconium oxide passivation layer 303 is optimized to form the second zirconium oxide passivation layer 303 with a suitable thickness, and the roughness of the rough surface of the second zirconium oxide passivation layer 303 is 0.2-0.3 micrometers.

[0059] like Figure 4 As shown, a second metal layer 304 is then formed on the second zirconium oxide passivation layer 303 .

[0060] In a specific embodiment, the second metal layer 304 is formed by magnetron sputtering, thermal evaporation, and electron beam evaporation, and the material of the second metal layer 304 is one or more of copper, aluminum, silver, titanium, and palladium.

[0061] In a specific embodiment, the second metal layer 304 is formed by magnetron sputtering, and the second metal layer 304 is made of copper.

[0062] like Figure 4 As shown, the carrier substrate 200 is then placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealant, a cleaning gas, an oxygen source gas, and a cleaning gas are circulated in the ALD chamber in sequence to form a third zirconium oxide passivation layer 305 with a rough surface, and the third zirconium oxide passivation layer 305 covers the second metal layer 304.

[0063] In a specific embodiment, during the formation of the third zirconium oxide passivation layer 305, the zirconium source gas is one of zirconium tetra-tert-butoxide, zirconium chloride, and zirconium iodide, and the organic sealing agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0064] In a specific embodiment, during the formation of the third zirconium oxide passivation layer 305, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

[0065] In a specific embodiment, the roughness of the rough surface of the third zirconium oxide passivation layer 305 is 0.3-0.4 micrometers.

[0066] In a specific embodiment, the temperature of the ALD chamber is maintained at 250-400°C, and the gas pressure of the ALD chamber is set to 0.5-5 torr. More specifically, the temperature of the ALD chamber can be set to 250°C, 280°C, 320°C, 350°C or 400°C, and the gas pressure of the ALD chamber can be set to 0.5 torr, 1 torr, 1.5 torr, 2 torr, 2.5 torr, 3 torr, 3.5 torr, 4 torr, 4.5 torr or 5 torr.

[0067] In a specific embodiment, during the process of forming the third zirconium oxide passivation layer 305 with a rough surface, the specific process of sequentially circulating the reaction gas composed of the zirconium source gas and the organic sealing agent, the cleaning gas, the oxygen source gas and the cleaning gas into the ALD chamber is as follows: the flow rate of the reaction gas composed of the zirconium source gas and the organic sealing agent is 60-120 sccm, and the time of each time the reaction gas composed of the zirconium source gas and the organic sealing agent is 3-7 seconds, wherein the flow rate of the organic sealing agent accounts for 8-15% of the reaction gas composed of the zirconium source gas and the organic sealing agent, and before the cleaning gas is introduced and after the introduction of the reaction gas composed of the zirconium source gas and the organic sealing agent is stopped, it is maintained for 1-4 seconds. , and then introduce a cleaning gas, the flow rate of the third cleaning gas is 3000-8000sccm, the time of introducing the cleaning gas is 10-20 seconds, then introduce an oxygen source gas, the flow rate of the oxygen source gas is 60-120sccm, the time of each introduction of the oxygen source gas is 3-7 seconds, and before introducing the cleaning gas and after stopping the introduction of the oxygen source gas, keep it for 1-4 seconds, and then introduce a cleaning gas, the flow rate of the cleaning gas is 3000-8000sccm, and the time of introducing the cleaning gas is 10-20 seconds, so as to form a third zirconia passivation layer 305 with a rough surface, the roughness of the rough surface of the third zirconia passivation layer 305 is 0.3-0.4 microns.

[0068] In a more specific embodiment, the specific preparation process of the third zirconium oxide passivation layer 305 is optimized to form the third zirconium oxide passivation layer 305 with a suitable thickness, and the roughness of the rough surface of the second zirconium oxide passivation layer 305 is 0.3-0.4 micrometers.

[0069] like Figure 4 As shown, a third metal layer 306 is then formed on the third zirconium oxide passivation layer 305 .

[0070] In a specific embodiment, the third metal layer 306 is formed by magnetron sputtering, thermal evaporation, and electron beam evaporation, and the third metal layer 306 is made of one or more of copper, aluminum, silver, titanium, and palladium.

[0071] In a specific embodiment, the third metal layer 306 is formed by magnetron sputtering, and the third metal layer 306 is made of copper.

[0072] In a specific embodiment, two adjacent Micro-LED units 100 are in direct physical contact with each other.

[0073] In a specific embodiment, by optimizing the specific process parameters of the first zirconia passivation layer 301, the first metal layer 302, the second zirconia passivation layer 303, the second metal layer 304, the third zirconia passivation layer 305, and the third metal layer 306, the surface roughness of the second zirconia passivation layer 303 is greater than the surface roughness of the first zirconia passivation layer 301, the surface roughness of the third zirconia passivation layer 305 is greater than the surface roughness of the second zirconia passivation layer 303, and the thickness of the first zirconia passivation layer 301 is greater than the thickness of the second zirconia passivation layer 303, and the thickness of the first zirconia passivation layer 301 is greater than the thickness of the third zirconia passivation layer 305. Through the arrangement of the above structure, it is easy to form a tightly bonded zirconia passivation layer / metal layer stacking structure, thereby avoiding metal layer peeling.

[0074] In a specific embodiment, the thickness of each of the first metal layer 302, the second metal layer 304 and the third metal layer 306 is less than the thickness of the first zirconia passivation layer, and is greater than the thickness of the second zirconia passivation layer 303 and / or the thickness of the third zirconia passivation layer 305. For example, the thickness of each of the first metal layer 302, the second metal layer 304 and the third metal layer 306 is greater than the thickness of the second zirconia passivation layer 303, and greater than the thickness of the third zirconia passivation layer 305, and the conductivity of each metal layer can be ensured, and the first metal layer 302 can reflect the light emitted by the Micro-LED chip, thereby greatly improving the light extraction efficiency of the Micro-LED chip.

[0075] like Figure 5 As shown, a first electrode 401 and a second electrode 402 are then formed. The first electrode 401 is electrically connected to the second semiconductor layer 103 of the Micro-LED unit 100 , and the second electrode 402 is electrically connected to the first metal layer 302 , the second metal layer 304 , and the third metal layer 306 .

[0076] In a specific embodiment, a first opening exposing the second semiconductor layer 103 is formed on each of the Micro-LED units 100 , an insulating layer (not shown) is first formed on the sidewall of the first opening 101 , and then the first electrode 401 is formed in the first opening.

[0077] In a specific embodiment, the first opening is formed by a wet etching process or a dry etching process.

[0078] In a specific embodiment, the insulating layer is any suitable dielectric material, such as silicon oxide, silicon nitride, aluminum oxide, etc., and the insulating layer is formed by a PECVD or ALD deposition process.

[0079] In a specific embodiment, the first electrode 401 is a copper electrode, which is formed by thermal evaporation, magnetron sputtering or electroplating.

[0080] like Figure 5 As shown, a second opening exposing the first zirconium oxide passivation layer 301 is formed on one of the M Micro-LED units 100, and the sidewall of the second opening exposes the first metal layer 302, the second metal layer 304 and the third metal layer 306, and a second electrode 402 is formed in the second opening.

[0081] In a specific embodiment, the second opening is formed by a wet etching process or a dry etching process.

[0082] In a specific embodiment, the second electrode 402 is a copper electrode, which is formed by thermal evaporation, magnetron sputtering or electroplating.

[0083] like Figure 6 As shown, the carrier substrate 200 is removed, and a conductive layer 600 is formed on the first semiconductor layer 101 . The first semiconductor layer 101 is electrically connected to the first metal layer 302 , the second metal layer 304 , and the third metal layer 306 through the conductive layer 600 .

[0084] In a specific embodiment, the conductive layer 600 is a metal copper layer, which is formed by thermal evaporation, magnetron sputtering or electroplating process.

[0085] like Figure 6 As shown, the present invention also proposes a method for preparing a multi-Micro-LED chip package, which is manufactured using the above-mentioned method for preparing a multi-Micro-LED chip package.

[0086] In other preferred technical solutions, the present invention provides a method for preparing a multi-Micro-LED chip package, and the method for preparing the multi-Micro-LED chip package comprises the following steps:

[0087] A light-emitting wafer is provided. The light-emitting wafer includes a first semiconductor layer, a light-emitting quantum well layer and a second semiconductor layer.

[0088] The light-emitting wafer is cut into pieces to form a plurality of Micro-LED units.

[0089] A carrier substrate is provided, and M of the Micro-LED units are transferred to the carrier substrate, where M≥6.

[0090] Then, the carrier substrate is placed in an ALD chamber, and a zirconium source gas, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber. Then, a reaction gas composed of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a first zirconium oxide passivation layer having a rough surface, wherein the first zirconium oxide passivation layer covers the upper surface and the side surface of each of the Micro-LED units.

[0091] Then, a first metal layer is formed on the first zirconium oxide passivation layer.

[0092] Then, the carrier substrate is placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are circulated in the ALD chamber in sequence to form a second zirconium oxide passivation layer with a rough surface, wherein the second zirconium oxide passivation layer covers the first metal layer.

[0093] Then, a second metal layer is formed on the second zirconium oxide passivation layer.

[0094] Then, the carrier substrate is placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are circulated in the ALD chamber in sequence to form a third zirconium oxide passivation layer with a rough surface, and the third zirconium oxide passivation layer covers the second metal layer.

[0095] Then, a third metal layer is formed on the third zirconium oxide passivation layer.

[0096] Then, a first electrode and a second electrode are formed, wherein the first electrode is electrically connected to the first semiconductor layer of the Micro-LED unit, and the second electrode is electrically connected to the first metal layer, the second metal layer, and the third metal layer.

[0097] The carrier substrate is removed, and a conductive layer is formed on the second semiconductor layer. The second semiconductor layer is electrically connected to the first metal layer, the second metal layer, and the third metal layer through the conductive layer.

[0098] In a more preferred technical solution, in the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the zirconium source gas is one of zirconium tetra-tert-butoxide, zirconium chloride, and zirconium iodide, and the organic sealing agent is one of methoxytrimethylsilane, trimethylchlorosilane, and monochlorosilane.

[0099] In a more preferred technical solution, during the process of forming the first zirconia passivation layer, the second zirconia passivation layer and the third zirconia passivation layer, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

[0100] In a more preferred technical solution, the method of forming the first metal layer, the second metal layer and the third metal layer is one of magnetron sputtering, thermal evaporation and electron beam evaporation, and the material of the first metal layer, the second metal layer and the third metal layer is one or more of copper, aluminum, silver, titanium and palladium.

[0101] In a more preferred technical solution, the surface roughness of the second zirconia passivation layer is greater than the surface roughness of the first zirconia passivation layer, and the surface roughness of the third zirconia passivation layer is greater than the surface roughness of the second zirconia passivation layer.

[0102] In a more preferred technical solution, the thickness of the first zirconium oxide passivation layer is greater than the thickness of the second zirconium oxide passivation layer, and the thickness of the first zirconium oxide passivation layer is greater than the thickness of the third zirconium oxide passivation layer.

[0103] In a more preferred technical solution, the thickness of each of the first metal layer, the second metal layer and the third metal layer is less than the thickness of the first zirconia passivation layer, and is greater than the thickness of the second zirconia passivation layer and / or the thickness of the third zirconia passivation layer.

[0104] In a more preferred technical solution, a first opening exposing the first semiconductor layer is formed on each of the Micro-LED units, an insulating layer is first formed on the sidewall of the first opening, and then the first electrode is formed in the first opening.

[0105] In a more preferred technical solution, a second opening exposing the first zirconium oxide passivation layer is formed on one of the M Micro-LED units, the sidewall of the second opening exposes the first metal layer, the second metal layer and the third metal layer, and a second electrode is formed in the second opening.

[0106] In a more optimal technical solution, the present invention also proposes a method for preparing a multi-Micro-LED chip package, which is manufactured using the above-mentioned method for preparing a multi-Micro-LED chip package.

[0107] In the preparation method of the multi-Micro-LED chip package of the present invention, zirconium oxide is used as the passivation layer of the Micro-LED chip. Since zirconium oxide has a high density, the Micro-LED chip can be more effectively protected. By optimizing the preparation process of the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the surface of each zirconium oxide passivation layer is a rough structure, and when each metal layer is subsequently formed, the bonding performance of the two can be effectively improved, and the peeling of each metal layer can be effectively avoided. Due to the presence of the uneven rough structure, the interface area between the first metal layer and the first zirconium oxide passivation layer is greatly increased. When the Micro-LED chip emits light, the light irradiated to the interface can be reflected multiple times and then emitted from the light-emitting surface of the Micro-LED chip, thereby greatly improving the light-emitting efficiency of the Micro-LED chip. In the present application, due to the presence of the first metal layer, the second metal layer and the third metal layer, multiple conductive paths are provided between each Micro-LED chip and the second electrode. In the subsequent use process, even if a conductive path is broken, it does not hinder the normal use of each Micro-LED chip.

[0108] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for preparing a multi-Micro-LED chip package, characterized in that: The method for preparing the multi-Micro-LED chip package comprises the following steps: Providing a light-emitting wafer, the light-emitting wafer comprising a first semiconductor layer, a light-emitting quantum well layer and a second semiconductor layer; Cutting the light-emitting wafer to form a plurality of Micro-LED units; Providing a carrier substrate, transferring M of the Micro-LED units to the carrier substrate, where M≥6; Then, the carrier substrate is placed in an ALD chamber, and a zirconium source gas, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially introduced into the ALD chamber in a cycle, and then a reaction gas composed of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially introduced into the ALD chamber in a cycle to form a first zirconium oxide passivation layer having a rough surface, wherein the first zirconium oxide passivation layer covers the upper surface and the side surface of each of the Micro-LED units; Then forming a first metal layer on the first zirconium oxide passivation layer; Then, the carrier substrate is placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a second zirconium oxide passivation layer having a rough surface, wherein the second zirconium oxide passivation layer covers the first metal layer; Then forming a second metal layer on the second zirconium oxide passivation layer; Then, the carrier substrate is placed in the ALD chamber again, and a reaction gas consisting of a zirconium source gas and an organic sealing agent, a cleaning gas, an oxygen source gas, and a cleaning gas are sequentially circulated into the ALD chamber to form a third zirconium oxide passivation layer having a rough surface, wherein the third zirconium oxide passivation layer covers the second metal layer; Then forming a third metal layer on the third zirconium oxide passivation layer; Then, a first electrode and a second electrode are formed, wherein the first electrode is electrically connected to the first semiconductor layer of the Micro-LED unit, and the second electrode is electrically connected to the first metal layer, the second metal layer, and the third metal layer; The carrier substrate is removed, and a conductive layer is formed on the second semiconductor layer. The second semiconductor layer is electrically connected to the first metal layer, the second metal layer, and the third metal layer through the conductive layer.

2. The method for preparing a multi-Micro-LED chip package according to claim 1, wherein: In the process of forming the first zirconium oxide passivation layer, the second zirconium oxide passivation layer and the third zirconium oxide passivation layer, the zirconium source gas is one of zirconium tetra-tert-butoxide, zirconium chloride and zirconium iodide, and the organic sealing agent is one of methoxytrimethylsilane, trimethylchlorosilane and monochlorosilane.

3. The method for preparing a multi-Micro-LED chip package according to claim 1, wherein: In the process of forming the first zirconia passivation layer, the second zirconia passivation layer and the third zirconia passivation layer, the cleaning gas is one of nitrogen, argon and helium, and the oxygen source gas is one of water vapor, oxygen, ozone and hydrogen peroxide.

4. The method for preparing a multi-Micro-LED chip package according to claim 1, wherein: The method for forming the first metal layer, the second metal layer and the third metal layer is one of magnetron sputtering, thermal evaporation and electron beam evaporation, and the material of the first metal layer, the second metal layer and the third metal layer is one or more of copper, aluminum, silver, titanium and palladium.

5. The method for preparing a multi-Micro-LED chip package according to claim 1, wherein: The surface roughness of the second zirconia passivation layer is greater than that of the first zirconia passivation layer, and the surface roughness of the third zirconia passivation layer is greater than that of the second zirconia passivation layer.

6. The method for preparing a multi-Micro-LED chip package according to claim 1, wherein: The thickness of the first zirconium oxide passivation layer is greater than the thickness of the second zirconium oxide passivation layer, and the thickness of the first zirconium oxide passivation layer is greater than the thickness of the third zirconium oxide passivation layer.

7. The method for preparing a multi-Micro-LED chip package according to claim 6, wherein: The thickness of each of the first metal layer, the second metal layer and the third metal layer is smaller than the thickness of the first zirconium oxide passivation layer, and is larger than the thickness of the second zirconium oxide passivation layer and / or the thickness of the third zirconium oxide passivation layer.

8. The method for preparing a multi-Micro-LED chip package according to claim 1, wherein: A first opening is formed on each of the Micro-LED units to expose the first semiconductor layer, an insulating layer is first formed on a sidewall of the first opening, and then the first electrode is formed in the first opening.

9. The method for preparing a multi-Micro-LED chip package according to claim 8, wherein: A second opening exposing the first zirconium oxide passivation layer is formed on one of the M Micro-LED units, a sidewall of the second opening exposes the first metal layer, the second metal layer and the third metal layer, and a second electrode is formed in the second opening.

10. A method for preparing a multi-Micro-LED chip package, characterized in that: The multi-Micro-LED chip package is manufactured using the preparation method of any one of claims 1 to 9.

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