A large-size epitaxial graphite disk and its preparation method

Abstract

The present invention relates to the technical field of epitaxial graphite disks, and discloses a large-size epitaxial graphite disk and a preparation method thereof, the method comprising obtaining a base layer graphite material to be prepared, performing a polishing treatment on the material and performing surface cleaning on the material. Then, a metal catalyst of a catalytic layer is selected, and is deposited on the cleaned base layer graphite material under a first preset environment. An epitaxial layer graphite material is obtained, and is deposited on a side of the catalytic layer away from the base layer graphite material under a second preset environment, and a microstructure is simultaneously provided on a side of the epitaxial layer graphite material away from the catalytic layer. Subsequently, a protective layer material is obtained, and is deposited on a side of the epitaxial layer graphite material away from the catalytic layer. The prepared large-size epitaxial graphite disk is obtained, and its magnetic permeability and resistivity are measured, and compared with the preset magnetic permeability and resistivity, and it is determined whether the structural dimensions of the microstructure need to be adjusted based on these data. The present invention effectively improves the performance of the prepared large-size epitaxial graphite disk.

Description

Technical Field

[0001] The invention relates to the technical field of epitaxial graphite disks, and in particular to a large-size epitaxial graphite disk and a preparation method thereof. Background Art

[0002] In today's high-tech field, especially in the manufacturing process of electronic devices, sensors and high-precision materials, epitaxial graphite disks have been widely used as a vital functional material. This material is widely used in various high-end equipment and instruments due to its excellent electrical conductivity and outstanding heat resistance. Whether it is used to improve the conduction efficiency of electronic devices or to exert its excellent thermal stability in sensors, epitaxial graphite disks play an indispensable role. However, in the preparation process of epitaxial graphite disks, the combination of the catalytic layer and the epitaxial layer often cannot guarantee a high deposition quality, which further limits the performance of epitaxial graphite disks.

[0003] At present, the traditional preparation method is difficult to ensure highly precise control of core process parameters such as temperature, gas flow, and pressure during the deposition process of the catalytic layer and the epitaxial layer, which leads to significant differences in the physical and chemical properties of the catalytic layer and the epitaxial layer, which has an adverse effect on the conductivity and long-term stability of the final product. Especially when manufacturing large-sized epitaxial graphite disks, due to the lack of preparation technology, the resistivity and permeability fluctuate greatly, making it difficult for the product to meet the strict requirements of the high-precision technology field. Although researchers have tried to create microstructures on the surface of the epitaxial layer through various technologies such as lithography, etching, nanoimprinting, and chemical etching in order to improve performance, there is a gap between the fineness and geometry of these microstructures and the specific requirements for permeability and resistivity in practical applications. It is difficult to fully optimize the permeability and resistivity properties of large-sized epitaxial graphite disks, which in turn restricts its wide application prospects in high-precision electronic components.

[0004] Therefore, it is urgent to invent a preparation technology for large-size epitaxial graphite disks to solve the problems in the prior art that the conductivity and long-term stability of large-size epitaxial graphite disks after preparation are poor, and the microstructure cannot fully optimize the performance of large-size epitaxial graphite disks. Summary of the invention

[0005] In view of this, the present invention proposes a large-size epitaxial graphite disk and a preparation method thereof, aiming to solve the problems in the current technology that the conductivity and long-term stability of the large-size epitaxial graphite disk after preparation are poor, and the microstructure cannot fully optimize the performance of the large-size epitaxial graphite disk.

[0006] The present invention provides a method for preparing a large-size epitaxial graphite disk, comprising:

[0007] Obtaining a base layer graphite material to be prepared, polishing the base layer graphite material, and cleaning the surface of the base layer graphite material after the polishing process;

[0008] Selecting a metal catalyst for the catalytic layer, and depositing the metal catalyst on the surface-cleaned graphite material of the substrate layer based on a first preset environment, wherein the first preset environment includes: a first preset deposition temperature, a preset gas flow rate, and a preset pressure;

[0009] Obtaining an epitaxial layer graphite material, depositing the epitaxial layer graphite material on a side of the catalyst layer away from the substrate layer graphite material based on a second preset environment, and providing a microstructure on a side of the epitaxial layer graphite material away from the catalyst layer, wherein the second preset environment includes: a second preset deposition temperature and deposition time;

[0010] Obtaining a protective layer material, and depositing the protective layer on a side of the epitaxial layer graphite material away from the catalytic layer;

[0011] Obtain the prepared large-size epitaxial graphite disk, and obtain the magnetic permeability and resistivity of the large-size epitaxial graphite disk, and determine whether to adjust the structural size of the microstructure based on the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity.

[0012] Further, when the metal catalyst is deposited on the surface of the base layer graphite material after cleaning based on the first preset environment, it includes:

[0013] Acquiring catalytic data of each catalytic layer in historical preparation data, and performing data cleaning on each of the catalytic data;

[0014] Acquire abnormal data in each of the catalytic data after data cleaning, and remove the abnormal data;

[0015] Establishing a linear axis according to each of the catalytic data after removing abnormal data, and establishing a catalytic model of each of the catalytic layers according to the linear axis;

[0016] Obtaining a preset thickness of the catalytic layer, and substituting the preset thickness data into the catalytic model;

[0017] Obtaining a preset deposition temperature, a preset gas flow rate, and a preset pressure output by the catalytic model, and determining the preset deposition temperature, the preset gas flow rate, and the preset pressure as a first preset deposition temperature, a preset gas flow rate, and a preset pressure in the first preset environment;

[0018] The catalytic data include: the deposition temperature, gas flow rate, pressure of the catalytic layer during catalysis and the thickness of the catalytic layer after catalysis.

[0019] Further, when the epitaxial layer graphite material is deposited on a side of the catalyst layer away from the substrate layer graphite material based on the second preset environment, the method includes:

[0020] Acquire growth data of each epitaxial layer in historical preparation data, and perform data cleaning on each growth data;

[0021] Acquire abnormal data in each of the growth data after data cleaning, and remove the abnormal data;

[0022] Establishing a linear axis according to each of the growth data after removing abnormal data, and establishing a growth model of each of the epitaxial layers according to the linear axis;

[0023] Obtaining a preset thickness and a preset number of crystals of the epitaxial layer, and substituting the preset thickness and the preset number of crystals into the growth model;

[0024] Acquire a preset deposition temperature and a preset deposition time output by the growth model, and determine the preset deposition temperature and the preset deposition time as a second preset deposition temperature and a preset deposition time in the second preset environment;

[0025] The growth data include: the deposition temperature and deposition time of the epitaxial layer, and the thickness and crystal quantity of the epitaxial layer after deposition.

[0026] Further, determining whether to adjust the structural dimensions of the microstructure according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity includes:

[0027] Determining a performance score of the microstructure according to a relationship between the magnetic permeability and resistivity and a configured preset magnetic permeability and preset resistivity, and determining whether to adjust a structural dimension of the microstructure according to a relationship between the performance score and a preconfigured preset performance score;

[0028] When the performance score is higher than the preset performance score, determining not to adjust the structural size of the microstructure;

[0029] When the performance score is lower than or equal to the preset performance score, an adjustment coefficient is determined according to the relationship between the performance score and the preset performance score, and the structural size of the microstructure is adjusted according to the adjustment coefficient.

[0030] Further, according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity, the performance score of the microstructure is determined, including:

[0031] determining a performance score of the microstructure according to a relationship between the magnetic permeability and the preset magnetic permeability;

[0032] When the magnetic permeability is greater than or equal to the preset magnetic permeability, the performance score of the microstructure is determined to be L3;

[0033] When the magnetic permeability is less than the preset magnetic permeability, the performance score of the microstructure is determined according to the relationship between the magnetic permeability and the preset magnetic permeability.

[0034] Further, when the magnetic permeability is less than the preset magnetic permeability, determining the performance score of the microstructure according to the relationship between the magnetic permeability and the preset magnetic permeability includes:

[0035] Obtaining a magnetic permeability difference between the magnetic permeability and the preset magnetic permeability, and determining a performance score of the microstructure according to a relationship between the magnetic permeability difference and a preconfigured first preset magnetic permeability difference and a second preset magnetic permeability difference;

[0036] When the magnetic permeability difference is less than or equal to the first preset magnetic permeability difference, the performance score of the microstructure is determined to be M2;

[0037] When the magnetic permeability difference is greater than the first preset magnetic permeability difference, and the magnetic permeability difference is less than or equal to the second preset magnetic permeability difference, the performance score of the microstructure is determined to be M1;

[0038] When the magnetic permeability difference is greater than the second preset magnetic permeability difference, the performance score of the microstructure is determined to be M0;

[0039] Wherein, the first preset magnetic permeability difference is smaller than the second preset magnetic permeability difference, and M0<M2<M3<M4.

[0040] Further, when determining the performance score of the microstructure as Mi, i=0, 1, 2, 3, it includes:

[0041] Determining whether to adjust the performance score Mi of the microstructure according to the relationship between the resistivity and the preset resistivity;

[0042] When the resistivity is less than or equal to the preset resistivity, determining not to adjust the performance score Mi of the microstructure;

[0043] When the resistivity is greater than the preset resistivity, an adjustment coefficient is determined according to the relationship between the resistivity and the preset resistivity, and the performance score Mi of the microstructure is adjusted according to the adjustment coefficient.

[0044] Furthermore, when determining the adjustment coefficient according to the relationship between the resistivity and the preset resistivity, it includes:

[0045] Obtaining a resistivity difference between the resistivity and a preset resistivity, and determining the adjustment coefficient according to a relationship between the resistivity difference and a preconfigured first preset resistivity difference and a second preset resistivity difference;

[0046] When the resistivity difference is less than the first preset resistivity difference, the adjustment coefficient is determined to be L3;

[0047] When the resistivity difference is greater than or equal to the first preset resistivity difference, and the resistivity difference is less than the second preset resistivity difference, the adjustment coefficient is determined to be L2;

[0048] When the resistivity difference is greater than or equal to the second preset resistivity difference, the adjustment coefficient is determined to be L1;

[0049] The first preset resistivity difference is smaller than the second preset resistivity difference, and L1<L2<L3<1.

[0050] Further, when the performance score is lower than or equal to the preset performance score, determining the adjustment coefficient according to the relationship between the performance score and the preset performance score includes:

[0051] Obtaining a score difference between the performance score and the preset performance score, and determining the adjustment coefficient according to a relationship between the score difference and a pre-configured first preset score difference and a second preset score difference;

[0052] When the score difference is less than or equal to the first preset score difference, the adjustment coefficient is determined to be Q3;

[0053] When the score difference is greater than the first preset score difference, and the score difference is less than or equal to the second preset score difference, the adjustment coefficient is determined to be Q2;

[0054] When the score difference is greater than the second preset score difference, the adjustment coefficient is determined to be Q1;

[0055] The first preset score difference is smaller than the second preset score difference, and Q1<Q2<Q3<1.

[0056] Compared with the prior art, the beneficial effect of the present invention is that by polishing and cleaning the surface of the graphite material of the substrate layer, the surface roughness and contaminants of the substrate in the traditional process are effectively solved, and the bonding force between the substrate layer and the subsequent deposited layer is improved. The flatness and cleanliness of the substrate layer play a vital role in the deposition process of the epitaxial layer, which can significantly reduce the defect rate in the crystal growth of the epitaxial layer and ensure the deposition uniformity and performance stability of the epitaxial layer. This processing step lays a solid foundation for the subsequent high-quality deposition of the catalytic layer and the epitaxial layer. Secondly, for the deposition of the catalytic layer, a precisely controlled first preset environment is adopted, including a preset deposition temperature, gas flow rate and pressure. The precise regulation of these key parameters makes the deposition of the catalytic layer more uniform, avoiding the instability of the catalytic layer caused by fluctuations in process conditions. The high-quality deposition of the catalytic layer can not only effectively promote the uniform growth of the epitaxial layer, but also enhance the adhesion between the epitaxial layer and the substrate layer, ensuring the overall performance of the epitaxial graphite disk. Then, in the deposition process of the epitaxial layer, the growth quality and performance of the epitaxial layer are further ensured by setting the second preset environment. By precisely controlling the deposition temperature and deposition time, an epitaxial layer with uniform thickness and stable crystal structure can be generated on the catalyst layer. As the core functional part of the epitaxial graphite disk, the electrical conductivity and thermal conductivity of the epitaxial layer play a decisive role in the performance of the final product. Through the control process of this method, the electrical conductivity and thermal conductivity of the epitaxial layer are significantly improved, meeting the strict requirements of large-sized epitaxial graphite disks in high-performance applications. In addition, by setting a microstructure on the side of the epitaxial layer surface away from the catalyst layer and controlling the performance of the epitaxial graphite disk by adjusting its structural size, the surface activity and functional properties of the material can be further improved. The design of the microstructure not only helps to improve the electrical conductivity and magnetic permeability of the graphite disk, but also can be customized according to the needs of different applications, thereby enhancing the stability and reliability of the epitaxial graphite disk in various extreme environments. Finally, by detecting the magnetic permeability and resistivity of the prepared epitaxial graphite disk, an accurate feedback mechanism is provided. The feedback mechanism can compare the measured resistivity and magnetic permeability with the preset target values ​​to ensure that the produced epitaxial graphite disk meets the expected performance standards. If deviations are found, the size of the microstructure can be further adjusted to optimize the performance.

[0057] On the other hand, the present application also provides a large-size epitaxial graphite disk, comprising:

[0058] basal layer;

[0059] An epitaxial layer is arranged on the surface of the base layer, wherein a honeycomb concave-convex structure is arranged on a side of the epitaxial layer away from the base layer;

[0060] A catalytic layer, disposed between the base layer and the epitaxial layer, the catalytic layer being used to catalyze the surface of the base layer;

[0061] A protective layer covers the side of the epitaxial layer away from the catalytic layer, wherein the protective layer is composed of one or more high-temperature resistant and corrosion-resistant materials such as silicon nitride and silicon oxide, and the protective layer is used to prevent chemical corrosion of the epitaxial layer.

[0062] It can be understood that the large-size epitaxial graphite disk and the preparation method thereof in the above-mentioned embodiments of the present invention have the same beneficial effects, which will not be described in detail. BRIEF DESCRIPTION OF THE DRAWINGS

[0063] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0064] Figure 1 A flowchart of a method for preparing a large-size epitaxial graphite disk provided in an embodiment of the present invention;

[0065] Figure 2 A schematic structural diagram of a large-size epitaxial graphite disk provided in an embodiment of the present invention;

[0066] Among them, 100, substrate layer; 200, epitaxial layer; 300, catalytic layer; 400, protective layer. DETAILED DESCRIPTION

[0067] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art. It should be noted that, in the absence of conflict, the embodiments of the present invention and the features described in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0068] like Figure 1 As shown, in some embodiments of the present application, this embodiment provides a method for preparing a large-size epitaxial graphite disk, comprising:

[0069] Step S100, obtaining a base layer graphite material to be prepared, polishing the base layer graphite material, and cleaning the surface of the polished base layer graphite material.

[0070] Step S200: selecting a metal catalyst for the catalytic layer, and depositing the metal catalyst on the surface-cleaned base layer graphite material based on a first preset environment.

[0071] Specifically, the first preset environment includes: a first preset deposition temperature, a preset gas flow rate, and a preset pressure.

[0072] Specifically, when depositing a metal catalyst on a surface-cleaned base layer graphite material based on a first preset environment, it includes: obtaining the catalytic data of each catalytic layer in the historical preparation data, and performing data cleaning on each catalytic data. Obtaining abnormal data in each catalytic data after data cleaning, and eliminating the abnormal data. Establishing a linear axis based on each catalytic data after eliminating the abnormal data, and establishing a catalytic model for each catalytic layer based on the linear axis. Obtaining a preset thickness of the catalytic layer, and substituting the preset thickness data into the catalytic model. Obtaining the preset deposition temperature, preset gas flow rate, and preset pressure output by the catalytic model, and determining the preset deposition temperature, preset gas flow rate, and preset pressure as the first preset deposition temperature, preset gas flow rate, and preset pressure in the first preset environment. Among them, the catalytic data includes: the deposition temperature, gas flow rate, pressure during catalysis of the catalytic layer, and the thickness of the catalytic layer after catalysis.

[0073] It can be seen that the key parameters related to the deposition of the catalytic layer are extracted from the historical preparation data, including deposition temperature, gas flow rate, pressure and thickness of the catalytic layer. Since there may be abnormal or erroneous data in the historical data, which will have an adverse effect on the accuracy of the model, data cleaning and abnormal elimination are required. Through this cleaning process, the basic data for subsequent model establishment is ensured to have higher accuracy and representativeness. Next, the cleaned data is used to construct the linear axis, which is the core part of the entire model. The establishment of the linear axis helps to capture the correlation and trend between the various parameters in the deposition process of the catalytic layer, thereby laying a theoretical foundation for the construction of the model. On this basis, the catalytic model of the catalytic layer is established by correlating the deposition temperature, gas flow rate, pressure and the thickness of the catalytic layer after catalysis in the historical catalytic data. This model can not only reflect the influence of various process parameters on the quality of the catalytic layer, but also provide guidance for future preparation processes. Afterwards, based on the preparation requirements, the preset thickness of the catalytic layer is obtained and substituted into the catalytic model as an input parameter. The catalytic model automatically generates the optimal deposition parameters, including the preset deposition temperature, gas flow rate and pressure, based on the input thickness data and combined with the trend of the historical data. This process achieves data-driven precise control, which can more effectively optimize the deposition process and ensure the uniformity and stability of the catalytic layer compared to traditional empirical methods. Finally, this data-driven model is also adaptive and can be continuously adjusted and optimized based on the actual data during the preparation process. In future production processes, the new data generated by each deposition can further improve the catalytic model so that it can still provide accurate deposition parameters when dealing with more variables and complex conditions. Through this continuous feedback and optimization mechanism, the thickness and uniformity of the catalytic layer can be ensured to always remain within the optimal range, thereby improving the overall performance and consistency of the epitaxial graphite disk.

[0074] It is understandable that the preset deposition parameters (temperature, gas flow and pressure) are determined based on the data cleaned and optimized model and used for specific deposition environment settings. This feedback mechanism based on historical data analysis can significantly improve the deposition quality of the catalyst layer, especially for large-scale production, which greatly reduces the adverse effects of process parameter fluctuations.

[0075] Step S300, obtaining an epitaxial layer graphite material, depositing the epitaxial layer graphite material on a side of the catalyst layer away from the substrate layer graphite material based on a second preset environment, and setting a microstructure on a side of the epitaxial layer graphite material away from the catalyst layer.

[0076] Specifically, the second preset environment includes: a second preset deposition temperature and deposition time.

[0077] Specifically, when the epitaxial layer graphite material is deposited on the side of the catalyst layer away from the substrate layer graphite material based on the second preset environment, it includes: obtaining the growth data of each epitaxial layer in the historical preparation data, and performing data cleaning on each growth data. Obtaining the abnormal data in each growth data after data cleaning, and eliminating the abnormal data. Establishing a linear axis based on each growth data after eliminating the abnormal data, and establishing a growth model for each epitaxial layer based on the linear axis. Obtaining the preset thickness and preset number of crystals of the epitaxial layer, and substituting the preset thickness and preset number of crystals into the growth model. Obtaining the preset deposition temperature and preset deposition time output by the growth model, and determining the preset deposition temperature and preset deposition time as the second preset deposition temperature and preset deposition time in the second preset environment. Among them, the growth data includes: the deposition temperature and deposition time during epitaxial layer deposition, and the thickness and number of crystals after epitaxial layer deposition.

[0078] It can be seen that the epitaxial layer growth data collected from the historical preparation process include key parameters such as deposition temperature, deposition time, epitaxial layer thickness, and number of crystals. These data have been preliminarily cleaned to remove potential outliers to ensure the accuracy and representativeness of the data. The data cleaning process aims to exclude abnormal data that may be caused by operational errors, equipment failures, or other interfering factors, thereby providing an accurate basis for establishing a reliable growth model. Next, the cleaned data is used to construct a linear axis that shows the relationship between deposition conditions and epitaxial layer quality. Linear analysis of these data can reveal the correlation between deposition temperature, deposition time, epitaxial layer thickness, and crystal number. Based on these relationships, an epitaxial layer growth model is established, which can predict the growth effect of the epitaxial layer under different deposition conditions. This model can not only simulate the growth under different conditions, but also provide a theoretical basis for adjusting deposition parameters. Finally, after the model is established, the preset thickness and number of crystals of the epitaxial layer are substituted into the model to obtain the corresponding optimal deposition conditions. In this way, the required deposition temperature and deposition time can be accurately predicted. These predicted values ​​are set as the deposition conditions in the second preset environment, thus ensuring that the expected epitaxial layer quality and performance can be achieved during the actual deposition process. This technical principle optimizes the deposition conditions and improves the uniformity and quality of the epitaxial layer by applying the analysis results of historical data to actual production.

[0079] It can be understood that by extracting key parameters from historical preparation data, including deposition temperature, deposition time, epitaxial layer thickness and number of crystals. After cleaning and removing anomalies, these data are used to establish a linear axis to reveal the relationship and trend between the parameters. Based on this linear axis, a growth model of the epitaxial layer is constructed, and the preset thickness and number of crystals are substituted into the model. The deposition temperature and deposition time output by the model are used as the conditions of the second preset environment. This process ensures that the deposition conditions of the epitaxial layer can be precisely controlled through data-driven optimization, so as to achieve the required thickness and crystal structure and improve the quality and performance of the epitaxial layer.

[0080] Step S400: obtaining a protective layer material, and depositing the protective layer on a side of the epitaxial layer graphite material away from the catalytic layer.

[0081] Preferably, the protective layer material is composed of one or more high temperature resistant and corrosion resistant materials such as silicon nitride and silicon oxide.

[0082] Step S500, obtaining the prepared large-size epitaxial graphite disk, and obtaining the magnetic permeability and resistivity of the large-size epitaxial graphite disk, and determining whether to adjust the structural dimensions of the microstructure according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity.

[0083] Specifically, when determining whether to adjust the structural dimensions of the microstructure according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity, it includes: determining the performance score of the microstructure according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity, and determining whether to adjust the structural dimensions of the microstructure according to the relationship between the performance score and the pre-configured preset performance score: when the performance score is higher than the preset performance score, it is determined not to adjust the structural dimensions of the microstructure. When the performance score is lower than or equal to the preset performance score, an adjustment coefficient is determined according to the relationship between the performance score and the preset performance score, and the structural dimensions of the microstructure are adjusted according to the adjustment coefficient.

[0084] Specifically, when the performance score is lower than or equal to the preset performance score, the adjustment coefficient is determined according to the relationship between the performance score and the preset performance score, including: obtaining the score difference between the performance score and the preset performance score, and determining the adjustment coefficient according to the relationship between the score difference and the pre-configured first preset score difference and the second preset score difference. When the score difference is less than or equal to the first preset score difference, the adjustment coefficient is determined to be Q3. When the score difference is greater than the first preset score difference, and the score difference is less than or equal to the second preset score difference, the adjustment coefficient is determined to be Q2. When the score difference is greater than the second preset score difference, the adjustment coefficient is determined to be Q1. Among them, the first preset score difference is less than the second preset score difference, and Q1<Q2<Q3<1.

[0085] It can be seen that by obtaining the actual magnetic permeability and resistivity of the prepared epitaxial graphite disk, these data are compared with the preset magnetic permeability and resistivity. The results of this comparison are used to calculate the performance score of the microstructure, which comprehensively considers the performance of the actual magnetic permeability and resistivity relative to the preset values. Through this comprehensive scoring system, the actual performance level of the microstructure can be accurately evaluated and it can be determined whether its structural dimensions need to be adjusted. When the actual performance score is higher than the preset performance score, it means that the microstructure of the epitaxial graphite disk has met or exceeded the design requirements, indicating that its magnetic permeability and resistivity meet the expected standards. In this case, there is no need to further adjust the structural dimensions of the microstructure, because the existing microstructure design is superior enough to meet the application requirements. However, when the performance score is lower than or equal to the preset performance score, it indicates that the actual performance of the microstructure has not met expectations, and the structural dimensions may need to be adjusted to optimize its performance. At the same time, when the performance score is lower than or equal to the preset performance score, the adjustment process involves determining an adjustment coefficient. First, the degree of performance deficiency is evaluated by calculating the score difference between the actual performance score and the preset performance score. Subsequently, this score difference is compared with the preset first and second score differences to determine the appropriate adjustment coefficient. Specifically, when the score difference is less than or equal to the first preset score difference, the adjustment coefficient is set to Q3; when the score difference is between the first and second preset score differences, the adjustment coefficient is Q2; if the score difference is greater than the second preset score difference, the adjustment coefficient is Q1. These adjustment coefficients (Q1<Q2<Q3<1) are used to precisely adjust the structural dimensions of the microstructure to improve its performance to the expected level.

[0086] It is understood that the microstructure is dynamically adjusted through a data-driven approach to ensure that its performance is consistent with the preset standards. Using actual data of magnetic permeability and resistivity, the performance of the microstructure is evaluated through performance scoring, and the structure is adjusted when necessary based on the score difference. This approach not only improves the performance consistency of epitaxial graphite disks, but also optimizes the adjustment efficiency during the production process, so that the final product can better meet application requirements.

[0087] Specifically, when determining the performance score of the microstructure according to the relationship between the magnetic permeability and resistivity and the preset magnetic permeability and preset resistivity, it includes: determining the performance score of the microstructure according to the relationship between the magnetic permeability and the preset magnetic permeability: when the magnetic permeability is greater than or equal to the preset magnetic permeability, the performance score of the microstructure is determined to be L3. When the magnetic permeability is less than the preset magnetic permeability, the performance score of the microstructure is determined according to the relationship between the magnetic permeability and the preset magnetic permeability.

[0088] Specifically, when the magnetic permeability is less than the preset magnetic permeability, the performance score of the microstructure is determined according to the relationship between the magnetic permeability and the preset magnetic permeability, including: obtaining the magnetic permeability difference between the magnetic permeability and the preset magnetic permeability, and determining the performance score of the microstructure according to the relationship between the magnetic permeability difference and the pre-configured first preset magnetic permeability difference and the second preset magnetic permeability difference: when the magnetic permeability difference is less than or equal to the first preset magnetic permeability difference, the performance score of the microstructure is determined to be M2. When the magnetic permeability difference is greater than the first preset magnetic permeability difference, and the magnetic permeability difference is less than or equal to the second preset magnetic permeability difference, the performance score of the microstructure is determined to be M1. When the magnetic permeability difference is greater than the second preset magnetic permeability difference, the performance score of the microstructure is determined to be M0. Among them, the first preset magnetic permeability difference is less than the second preset magnetic permeability difference, and M0<M2<M3<M4.

[0089] Specifically, when the performance score of the microstructure is determined to be Mi, i=0,1,2,3, it includes: determining whether to adjust the performance score Mi of the microstructure according to the relationship between the resistivity and the preset resistivity: when the resistivity is less than or equal to the preset resistivity, determining not to adjust the performance score Mi of the microstructure. When the resistivity is greater than the preset resistivity, determining the adjustment coefficient according to the relationship between the resistivity and the preset resistivity, and adjusting the performance score Mi of the microstructure according to the adjustment coefficient.

[0090] Specifically, when determining the adjustment coefficient according to the relationship between the resistivity and the preset resistivity, it includes: obtaining the resistivity difference between the resistivity and the preset resistivity, and determining the adjustment coefficient according to the relationship between the resistivity difference and the pre-configured first preset resistivity difference and the second preset resistivity difference. When the resistivity difference is less than the first preset resistivity difference, the adjustment coefficient is determined to be L3. When the resistivity difference is greater than or equal to the first preset resistivity difference, and the resistivity difference is less than the second preset resistivity difference, the adjustment coefficient is determined to be L2. When the resistivity difference is greater than or equal to the second preset resistivity difference, the adjustment coefficient is determined to be L1. Among them, the first preset resistivity difference is less than the second preset resistivity difference, and L1<L2<L3<1.

[0091] It can be seen that the performance score of the microstructure is preliminarily determined by the relationship between the magnetic permeability and the preset magnetic permeability. If the actually measured magnetic permeability is greater than or equal to the preset magnetic permeability, the performance score of the microstructure is directly set to L3, which indicates that the magnetic permeability of the microstructure performs well. If the magnetic permeability is lower than the preset value, the magnetic permeability difference is calculated and compared with the preset first and second magnetic permeability differences to determine the specific level of the performance score. When the magnetic permeability difference is less than or equal to the first preset magnetic permeability difference, the score of the microstructure is M2; if the difference is between the first and second preset differences, the score is M1; and when the difference is greater than the second preset magnetic permeability difference, the score is M0. This scoring system provides a clear performance level division, so that microstructures with different magnetic permeability levels can be accurately classified and evaluated. After determining the preliminary performance score Mi, further adjustments are made based on the relationship between the resistivity and the preset resistivity. If the actual resistivity is less than or equal to the preset resistivity, the performance score of the microstructure does not need to be adjusted and the preliminary score is maintained. If the resistivity is greater than the preset resistivity, the adjustment coefficient needs to be determined based on the relationship between the resistivity difference and the preset resistivity difference. The adjustment coefficient is determined based on the comparison between the resistivity difference and the preset resistivity difference: when the resistivity difference is less than the first preset resistivity difference, the adjustment coefficient is L3; when the difference is between the first and second preset resistivity differences, the adjustment coefficient is L2; ​​when the difference is greater than or equal to the second preset resistivity difference, the adjustment coefficient is L1. The adjustment coefficient (L1<L2<L3<1) is used to correct the preliminary performance score, so as to more accurately reflect the impact of the actual resistivity on the microstructure performance.

[0092] Understandably, this comprehensive analysis and adjustment mechanism enables real-time feedback and adjustment of microstructure performance during production. This approach not only establishes a clear relationship between preset permeability and resistivity, but also incorporates the impact of actual resistivity on performance into the scoring system through adjustment coefficients. This approach effectively improves the accuracy and consistency of microstructure performance, and can be flexibly adjusted according to different performance requirements in actual applications to ensure that the final product can meet or exceed the expected performance standards. By comprehensively considering permeability and resistivity, the mutual influence of the two is effectively managed, thereby improving the overall performance and application applicability of the microstructure.

[0093] In the above embodiment, by polishing and cleaning the graphite material of the substrate layer, the surface roughness and contaminants of the substrate in the traditional process are effectively solved, and the bonding force between the substrate layer and the subsequent deposited layer is improved. The flatness and cleanliness of the substrate layer play a vital role in the deposition process of the epitaxial layer, which can significantly reduce the defect rate in the crystal growth of the epitaxial layer and ensure the deposition uniformity and performance stability of the epitaxial layer. This processing step lays a solid foundation for the subsequent high-quality deposition of the catalytic layer and the epitaxial layer. Secondly, for the deposition of the catalytic layer, a precisely controlled first preset environment is adopted, including a preset deposition temperature, gas flow rate and pressure. The precise regulation of these key parameters makes the deposition of the catalytic layer more uniform, avoiding the instability of the catalytic layer caused by fluctuations in process conditions. The high-quality deposition of the catalytic layer can not only effectively promote the uniform growth of the epitaxial layer, but also enhance the adhesion between the epitaxial layer and the substrate layer, ensuring the overall performance of the epitaxial graphite disk. Then, in the deposition process of the epitaxial layer, the growth quality and performance of the epitaxial layer are further ensured by setting the second preset environment. By precisely controlling the deposition temperature and deposition time, an epitaxial layer with uniform thickness and stable crystal structure can be generated on the catalytic layer. As the core functional part of the epitaxial graphite disk, the electrical conductivity and thermal conductivity of the epitaxial layer play a decisive role in the performance of the final product. Through the control process of this method, the electrical conductivity and thermal conductivity of the epitaxial layer are significantly improved, meeting the strict requirements of large-sized epitaxial graphite disks in high-performance applications. In addition, by setting a microstructure on the side of the epitaxial layer surface away from the catalytic layer and controlling the performance of the epitaxial graphite disk by adjusting its structural size, the surface activity and functional properties of the material can be further improved. The design of the microstructure not only helps to improve the electrical conductivity and magnetic permeability of the graphite disk, but also can be customized according to the needs of different applications, thereby enhancing the stability and reliability of the epitaxial graphite disk in various extreme environments. Finally, by detecting the magnetic permeability and resistivity of the prepared epitaxial graphite disk, an accurate feedback mechanism is provided. The feedback mechanism can compare the measured resistivity and magnetic permeability with the preset target values ​​to ensure that the produced epitaxial graphite disk meets the expected performance standards. If deviations are found, the size of the microstructure can be further adjusted to optimize the performance.

[0094] In another preferred embodiment based on the above embodiment, Figure 2 As shown, this embodiment provides a large-sized epitaxial graphite disk, including: a substrate layer, an epitaxial layer, a catalytic layer and a protective layer. The epitaxial layer is arranged on the surface of the substrate layer, wherein a honeycomb concave-convex structure is arranged on the side of the epitaxial layer away from the substrate layer. The catalytic layer is arranged between the substrate layer and the epitaxial layer, and the catalytic layer is used to catalyze the surface of the substrate layer. The protective layer covers the side of the epitaxial layer away from the catalytic layer, wherein the protective layer is composed of one or more high-temperature resistant and corrosion-resistant materials such as silicon nitride and silicon oxide, and the protective layer is used to prevent chemical corrosion of the epitaxial layer.

[0095] It can be understood that the large-size epitaxial graphite disk and the preparation method thereof in the above-mentioned embodiments of the present invention have the same beneficial effects, which will not be described in detail.

[0096] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0097] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0098] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0099] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A method for preparing a large-size epitaxial graphite disk, characterized in that: include: Obtaining a base layer graphite material to be prepared, polishing the base layer graphite material, and cleaning the surface of the base layer graphite material after the polishing process; Selecting a metal catalyst for the catalytic layer, and depositing the metal catalyst on the surface-cleaned graphite material of the substrate layer based on a first preset environment, wherein the first preset environment includes: a first preset deposition temperature, a preset gas flow rate, and a preset pressure; Obtaining an epitaxial layer graphite material, depositing the epitaxial layer graphite material on a side of the catalyst layer away from the substrate layer graphite material based on a second preset environment, and providing a microstructure on a side of the epitaxial layer graphite material away from the catalyst layer, wherein the second preset environment includes: a second preset deposition temperature and deposition time; Obtaining a protective layer material, and depositing the protective layer on a side of the epitaxial layer graphite material away from the catalytic layer; Obtaining the prepared large-size epitaxial graphite disk, and obtaining the magnetic permeability and resistivity of the large-size epitaxial graphite disk, and determining whether to adjust the structural size of the microstructure according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity; When the metal catalyst is deposited on the surface of the base layer graphite material after cleaning based on the first preset environment, it includes: Acquiring catalytic data of each catalytic layer in historical preparation data, and performing data cleaning on each of the catalytic data; Acquire abnormal data in each of the catalytic data after data cleaning, and remove the abnormal data; Establishing a linear axis according to each of the catalytic data after removing abnormal data, and establishing a catalytic model of each of the catalytic layers according to the linear axis; Obtaining a preset thickness of the catalytic layer, and substituting the preset thickness data into the catalytic model; Obtaining a preset deposition temperature, a preset gas flow rate, and a preset pressure output by the catalytic model, and determining the preset deposition temperature, the preset gas flow rate, and the preset pressure as a first preset deposition temperature, a preset gas flow rate, and a preset pressure in the first preset environment; Wherein, the catalytic data include: the deposition temperature, gas flow rate, pressure of the catalytic layer during catalysis and the thickness of the catalytic layer after catalysis; When the epitaxial layer graphite material is deposited on a side of the catalyst layer away from the substrate layer graphite material based on a second preset environment, the method comprises: Acquire growth data of each epitaxial layer in historical preparation data, and perform data cleaning on each growth data; Acquire abnormal data in each of the growth data after data cleaning, and remove the abnormal data; Establishing a linear axis according to each of the growth data after removing abnormal data, and establishing a growth model of each of the epitaxial layers according to the linear axis; Obtaining a preset thickness and a preset number of crystals of the epitaxial layer, and substituting the preset thickness and the preset number of crystals into the growth model; Acquire a preset deposition temperature and a preset deposition time output by the growth model, and determine the preset deposition temperature and the preset deposition time as a second preset deposition temperature and a preset deposition time in the second preset environment; The growth data include: the deposition temperature and deposition time of the epitaxial layer, and the thickness and crystal quantity of the epitaxial layer after deposition; Determining whether to adjust the structural dimensions of the microstructure according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity includes: Determining a performance score of the microstructure according to a relationship between the magnetic permeability and resistivity and a configured preset magnetic permeability and preset resistivity, and determining whether to adjust a structural dimension of the microstructure according to a relationship between the performance score and a preconfigured preset performance score; When the performance score is higher than the preset performance score, determining not to adjust the structural size of the microstructure; When the performance score is lower than or equal to the preset performance score, an adjustment coefficient is determined according to the relationship between the performance score and the preset performance score, and the structural size of the microstructure is adjusted according to the adjustment coefficient.

2. The method for preparing a large-size epitaxial graphite disk according to claim 1, characterized in that: Determining the performance score of the microstructure according to the relationship between the magnetic permeability and resistivity and the configured preset magnetic permeability and preset resistivity includes: determining a performance score of the microstructure according to a relationship between the magnetic permeability and the preset magnetic permeability; When the magnetic permeability is greater than or equal to the preset magnetic permeability, the performance score of the microstructure is determined to be L3; When the magnetic permeability is less than the preset magnetic permeability, the performance score of the microstructure is determined according to the relationship between the magnetic permeability and the preset magnetic permeability.

3. The method for preparing a large-size epitaxial graphite disk according to claim 2, characterized in that: When the magnetic permeability is less than the preset magnetic permeability, determining the performance score of the microstructure according to the relationship between the magnetic permeability and the preset magnetic permeability includes: Obtaining a magnetic permeability difference between the magnetic permeability and the preset magnetic permeability, and determining a performance score of the microstructure according to a relationship between the magnetic permeability difference and a preconfigured first preset magnetic permeability difference and a second preset magnetic permeability difference; When the magnetic permeability difference is less than or equal to the first preset magnetic permeability difference, the performance score of the microstructure is determined to be M2; When the magnetic permeability difference is greater than the first preset magnetic permeability difference, and the magnetic permeability difference is less than or equal to the second preset magnetic permeability difference, the performance score of the microstructure is determined to be M1; When the magnetic permeability difference is greater than the second preset magnetic permeability difference, the performance score of the microstructure is determined to be M0; Wherein, the first preset magnetic permeability difference is smaller than the second preset magnetic permeability difference, and M0<M2<M3<M4.

4. The method for preparing a large-size epitaxial graphite disk according to claim 3, characterized in that: When determining the performance score of the microstructure as Mi, i=0, 1, 2, 3, it includes: Determining whether to adjust the performance score Mi of the microstructure according to the relationship between the resistivity and the preset resistivity; When the resistivity is less than or equal to the preset resistivity, determining not to adjust the performance score Mi of the microstructure; When the resistivity is greater than the preset resistivity, an adjustment coefficient is determined according to the relationship between the resistivity and the preset resistivity, and the performance score Mi of the microstructure is adjusted according to the adjustment coefficient.

5. The method for preparing a large-size epitaxial graphite disk according to claim 4, characterized in that: When determining the adjustment coefficient according to the relationship between the resistivity and the preset resistivity, it includes: Obtaining a resistivity difference between the resistivity and a preset resistivity, and determining the adjustment coefficient according to a relationship between the resistivity difference and a preconfigured first preset resistivity difference and a second preset resistivity difference; When the resistivity difference is less than the first preset resistivity difference, the adjustment coefficient is determined to be L3; When the resistivity difference is greater than or equal to the first preset resistivity difference, and the resistivity difference is less than the second preset resistivity difference, the adjustment coefficient is determined to be L2; When the resistivity difference is greater than or equal to the second preset resistivity difference, the adjustment coefficient is determined to be L1; The first preset resistivity difference is smaller than the second preset resistivity difference, and L1<L2<L3<1.

6. The method for preparing a large-size epitaxial graphite disk according to claim 1, characterized in that: When the performance score is lower than or equal to the preset performance score, determining the adjustment coefficient according to the relationship between the performance score and the preset performance score includes: Obtaining a score difference between the performance score and the preset performance score, and determining the adjustment coefficient according to a relationship between the score difference and a pre-configured first preset score difference and a second preset score difference; When the score difference is less than or equal to the first preset score difference, the adjustment coefficient is determined to be Q3; When the score difference is greater than the first preset score difference, and the score difference is less than or equal to the second preset score difference, the adjustment coefficient is determined to be Q2; When the score difference is greater than the second preset score difference, the adjustment coefficient is determined to be Q1; The first preset score difference is smaller than the second preset score difference, and Q1<Q2<Q3<1.

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