An automated production line suitable for semiconductors

By filling the wafer transmission pipeline of the semiconductor automation production line with protection gas and isolating and protecting the wafer, the problem of oxidation of Group III-V semiconductor materials is solved, and the performance and stability of the device are improved.

CN118969682BActive Publication Date: 2025-02-25WUXI HUACHEN XINGUANG SEMICON TECH CO LTD
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Patent Information

Application Number
CN202411420916.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-10-12
Publication Date
2025-02-25
Estimated Expiration
2044-10-12

AI Technical Summary

Technical Problem

Group III-V semiconductor materials are prone to oxidation when exposed to air or moisture, resulting in the formation of natural oxide layers, affecting the electrical properties of the material and the reliability and life of the device.

Method used

An automated production line suitable for semiconductors was designed to effectively isolate and protect the wafer by filling the wafer transmission pipeline with protective gas, and avoid oxidation.

Benefits of technology

It significantly reduces the time when wafers are exposed to air, improves device performance and stability, and reduces process failure rates and device aging problems caused by oxidation.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application relates to the technical field of semiconductor production, and in particular to an automated production line suitable for semiconductors, including a wafer transmission pipeline filled with protective gas, a wafer boat for carrying wafers arranged in the wafer transmission pipeline, a plurality of closed sample loading chambers for extracting vacuum connected to the wafer transmission pipeline, at least one of which is used to take and place the wafer boat, and the remaining sample loading chambers are connected to a vacuum working chamber, and a plurality of closed workbenches are also connected to the wafer transmission pipeline, a valve 1 is arranged between the sample loading chamber and the workbench and the wafer transmission pipeline, and a valve 2 is arranged between the sample loading chamber and the vacuum working chamber. The wafer is transported to each working chamber or workbench through the transmission pipeline for closed processing. The wafer is always isolated from the outside during the whole process, and the transmission pipeline is filled with protective gas to protect the wafer, thereby effectively inhibiting oxidation.
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Description

Technical Field

[0001] The present application relates to the technical field of semiconductor production, and in particular to an automated production line suitable for semiconductors. Background Art

[0002] III-V semiconductor materials, such as gallium arsenide (GaAs) and indium phosphide (InP), have a wide range of applications in the fields of microelectronics and optoelectronics due to their unique electronic properties, such as high-speed transistors, optoelectronic devices, and solar cells. However, a common challenge for these materials is that they are easily oxidized, especially when exposed to air or moisture, and a "native oxide" is quickly formed, especially for aluminum (Al)-containing material layers, such as AlGaAs or InAlGaAs, which oxidize faster. This oxide layer not only affects the electrical properties of the material, resulting in a decrease in product performance, but may also cause device reliability issues, accelerate device aging, and reduce the life and stability of the device. In particular, if the oxide layer on the surface of the sample is not removed cleanly before the secondary epitaxial growth, the oxide layer will become an obstacle in the epitaxial growth process, resulting in a decrease in the interface quality between the newly grown semiconductor layer and the substrate material, and interface defects, stress, and lattice mismatch may occur, affecting the electrical and optical properties of the material.

[0003] To address this problem, the industry currently adopts some surface cleaning or surface passivation methods. Before epitaxial growth or metal evaporation, chemical cleaning or plasma cleaning technology is used to remove the surface oxide layer to ensure the cleanliness of the material surface. After cleaning, surface passivation treatment is immediately performed, such as growing a thin oxide or nitride protective layer to isolate the air and prevent secondary oxidation.

[0004] However, the wafer surface will be oxidized immediately after being exposed to the air after cleaning, and the passivation layer needs to be cleaned before epitaxial growth or metal evaporation, which increases the process complexity and decreases the product stability. Summary of the invention

[0005] In order to solve the above problems, the present application provides an automated production line suitable for semiconductors.

[0006] The present application provides an automated production line for semiconductors using the following technical solutions:

[0007] An automated production line suitable for semiconductors comprises a wafer transmission pipeline filled with protective gas, a wafer boat for carrying wafers being arranged in the wafer transmission pipeline, a plurality of sealed sample loading chambers for extracting vacuum being connected to the wafer transmission pipeline, at least one of the sample loading chambers being used for taking and placing the wafer boat, and the other sample loading chambers being connected to a vacuum working chamber, a plurality of sealed workbenches being connected to the wafer transmission pipeline, a first valve being arranged between the sample loading chamber and the workbench and the wafer transmission pipeline, and a second valve being arranged between the sample loading chamber and the vacuum working chamber.

[0008] By adopting the above technical solution, the wafer is transported to each working chamber or workbench through the transmission pipeline for closed processing. The wafer is always isolated from the outside during the whole process, and the transmission pipeline is filled with protective gas to protect the wafer, thereby effectively inhibiting oxidation. This protective measure is crucial for secondary epitaxial growth and the formation of the passivation layer, because these processes are very sensitive to oxygen in the environment. By isolating the wafer before the oxidation-sensitive step, the performance and stability of the device can be significantly improved, and the performance degradation and aging of the device caused by oxidation can be prevented.

[0009] Preferably, the wafer transmission pipeline is provided with a flow control valve 1 and an air pressure regulating valve 1.

[0010] By adopting the above technical solution, the two work together to accurately control the air pressure in the wafer transmission pipeline.

[0011] Preferably, the sample loading chamber and the workbench are independently connected to an air pipe filled with protective gas, and the air pipe is provided with a second flow control valve and a second air pressure regulating valve.

[0012] By adopting the above technical solution, the two work together to accurately control the air pressure in the sample loading chamber and the workbench.

[0013] Preferably, the air pressure in the sample loading chamber and the workbench is lower than the air pressure in the wafer transfer pipeline, but higher than the external environment pressure.

[0014] By adopting the above technical solution, the protective gas in the whole system flows to the wafer transmission pipeline, the sample loading chamber and the workbench, and the external environment, thereby ensuring that the protective gas pressure in the system is always positive relative to the external environment, thereby ensuring that the wafer is not directly exposed to the air at any time.

[0015] Preferably, the workbench comprises a glue coating and developing machine, the glue coating and developing machine is connected to the photolithography machine via an open track, and a valve three is provided between the glue coating and developing machine and the open track.

[0016] By adopting the above technical solution, after the wafer is coated with glue in the coating and developing machine, the surface coated with photoresist has been isolated from the external environment, so it no longer needs to be sealed and can be transported to the photolithography machine through an open channel.

[0017] Preferably, there are at least three vacuum working chambers, each of which is provided with a PECVD machine, a RIE machine and a MOCVD machine.

[0018] By adopting the above technical solution, all three machines need to be in a vacuum environment when processing wafers. Before the wafer is transported to the vacuum working chamber, it is first transported to the front sample loading chamber, and after the sample loading chamber is evacuated, the vacuum working chamber and the sample loading chamber are connected to ensure the vacuum degree.

[0019] Preferably, the workbench includes a table body, in which a plurality of processing grooves for performing different process steps are arranged, and the processing grooves are interconnected. An air intake manifold and an air outlet manifold are arranged in the table body, and the air outlet manifold is connected to one of the processing grooves. An air intake branch pipe is independently arranged in each processing groove, and all the air intake branch pipes are connected to the air intake manifold.

[0020] By adopting the above technical scheme, different processing grooves can be used to process wafers with different processes. The wafers are placed in various processing grooves on the workbench for processing. The protective gas enters the air intake branch pipe through the air intake main pipe and then enters the processing groove, and is finally discharged, thereby ensuring that the wafers are always protected by the protective gas during the processing.

[0021] Preferably, a processing table for carrying a wafer boat is provided in the processing tank, a touch switch for touching the wafer boat is provided on the processing table, an electric control valve is provided on the air intake branch pipe, and the electric control valve and the touch switch are electrically connected.

[0022] By adopting the above technical solution, when the wafer is processed in one of the processing tanks, the wafer boat is placed on the processing table, the touch switch is turned on, the electric control valve in the processing tank opens the air inlet branch pipe, and the protective gas flows from the processing tank and flows to other processing tanks. When the wafer moves to other processes, that is, moves to other processing tanks, the electric control valve in the original processing tank is closed, and the electric control valve in the new processing tank is opened, and the protective gas flows out. That is, the protective gas always flows out from the processing tank where the wafer is located, thereby ensuring that the protective gas pressure in the processing tank where the wafer is located is always the largest when the wafer is processed, thereby preventing oxygen from entering the processing tank when some processing tanks leak and affecting the processing of the wafer.

[0023] Preferably, a bottom plate is provided at the bottom of the processing tank, the air intake main pipe is located below the bottom plate, the bottom plate is hollow, a plurality of air outlet holes are provided on the upper surface of the bottom plate, the lower end of the air intake branch pipe is connected to the air intake main pipe, and the upper end of the air intake branch pipe is connected to the inside of the bottom plate.

[0024] By adopting the above technical solution, there are more gas outlet holes, and the protective gas can fill the processing groove more evenly when it flows out.

[0025] Preferably, a baffle is horizontally rotatably connected to the base plate, a transmission rod penetrating the base plate is fixed at the center of the baffle, the lower end of the transmission rod is opposite to the air intake branch pipe and a plurality of transmission blades are circumferentially inclined on the side wall, a plurality of air holes corresponding to the air outlet holes are provided on the baffle, an arc-shaped limiting groove is provided on the baffle, a limiting column slidably connected to the limiting groove is fixed on the base plate, a reset spring is provided between the limiting column and the limiting groove, when the reset spring is in a natural state, the limiting column is located at one end of the limiting groove, and the air outlet hole is blocked by the baffle, when the limiting column is located at the other end of the limiting groove, the air hole and the air outlet hole are opposite.

[0026] By adopting the above technical solution, when the air inlet branch is opened, the protective gas flows out from the air inlet branch and blows on the transmission blades, which are rotated by force and drive the transmission rod and the baffle to rotate. The baffle overcomes the elastic force of the reset spring and rotates, so that the air vent and the air outlet are directly opposite, the air outlet is opened, and the protective gas is ejected from the air outlet. When the air inlet branch is closed, the baffle is reset under the action of the reset spring, and the baffle blocks the air outlet to protect the air outlet, and also prevents the protective gas from flowing back from the air outlet into the air inlet branch.

[0027] In summary, this application includes the following beneficial technical effects:

[0028] The automated production line of the present invention achieves effective protection for wafers by filling protective gas in the wafer transmission pipeline, significantly reduces the time the wafers are exposed to the air, reduces the process failure rate due to oxidation, and improves production efficiency and yield rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of the overall process of the embodiment;

[0030] Figure 2 is a schematic diagram of the connection between the wafer transfer pipeline and the sample loading chamber in the embodiment;

[0031] Figure 3 It is a structural schematic diagram of the platform body in the embodiment;

[0032] Figure 4 Schematic diagram of the internal structure of the platform in the embodiment;

[0033] Figure 5 3 is a top view of the connection between the bottom plate and the baffle in the embodiment.

[0034] Description of reference numerals:

[0035] 1. Wafer transfer pipeline; 2. Sample loading chamber; 3. Vacuum working chamber; 4. Workbench; 5. Valve 1; 6. Valve 2; 7. Flow control valve 1; 8. Air pressure regulating valve 1; 9. Flow control valve 2; 10. Air pressure regulating valve 2; 11. Glue coating and developing machine; 12. Open track; 13. Photolithography machine; 14. Valve 3; 15. PECVD machine; 16. RIE machine; 17. MOCVD machine; 18. Table; 19. Processing tank; 20. Air intake main pipe; 21. Air intake branch pipe; 22. Processing table; 23. Bottom plate; 24. Air outlet; 25. Baffle; 26. Transmission rod; 27. Transmission blade; 28. Air vent; 29. ​​Limiting groove; 30. Limiting column; 31. Reset spring. DETAILED DESCRIPTION

[0036] The present application is further described in detail below in conjunction with all the accompanying drawings.

[0037] Example

[0038] The present application embodiment discloses an automated production line suitable for semiconductors, referring to Figure 1 to Figure 2 , including a closed wafer transmission pipeline 1, and the wafer transmission pipeline 1 is connected to a plurality of sample loading chambers 2 and a closed workbench 4. The wafer transmission pipeline 1 is filled with a protective gas, such as nitrogen. The wafer transmission pipeline 1 is provided with a flow control valve 7 and a pressure regulating valve 8, which are used to adjust and control the nitrogen pressure in the wafer transmission pipeline 1.

[0039] Reference Figure 1 to Figure 2 The wafers flow in the wafer transfer pipe 1 inside the wafer boat, and one of the sample loading chambers 2 is used to take and place the wafer boat. The operator puts the wafer boat carrying the unprocessed wafers into the sample loading chamber 2 and flows it to the other workbenches 4 and the sample loading chamber 2 through the wafer transfer pipe 1 for different process processing. After the processing is completed, it returns to the sample loading chamber 2, and the operator takes out the processed wafers.

[0040] Reference Figure 1 to Figure 2 The remaining sample loading chambers 2 are connected to vacuum working chambers 3, and different dry process machines are installed in each vacuum working chamber 3. The dry process machines include but are not limited to PECVD machine 15, RIE machine 16, MOCVD machine 17, ICP machine, plasma ashing machine, electron beam evaporation machine, etc. The wafers are processed in different vacuum working chambers 3.

[0041] Reference Figure 1 to Figure 2Preferably, the vacuum working chamber 3 can also be set as one, and several dry process machines can be integrated together and installed in one vacuum working chamber 3 for processing.

[0042] Reference Figure 1 to Figure 2 A valve 5 is provided between the sample loading chamber 2 and the workbench 4 and the wafer transfer pipeline 1, and a valve 6 is provided between the sample loading chamber 2 and the vacuum working chamber 3. The sample loading chamber 2 and the workbench 4 are independently connected to an air pipe filled with protective gas, and a flow control valve 9 and an air pressure regulating valve 10 are provided on the air pipe.

[0043] Reference Figure 1 to Figure 2 When the wafer boat is transferred to the front end of the sample loading chamber 2 through the wafer transfer pipeline 1, valve 1 5 and valve 2 6 are both in a closed state. The sample loading chamber 2 is evacuated and then filled with nitrogen. Through the flow control valve 2 9 and the air pressure regulating valve 2 10, it is ensured that the nitrogen pressure inside the sample loading chamber 2 is positive relative to the external environment and negative relative to the wafer transfer pipeline 1. At this time, valve 1 5 can be opened to transfer the wafer boat into the sample loading chamber 2, and then valve 1 5 can be closed.

[0044] Reference Figure 1 to Figure 2 Before the process starts, the vacuum working chamber 3 is in a high vacuum state, so it is necessary to load the sample into the chamber 2 and evacuate it to make its vacuum degree close to the vacuum degree in the vacuum working chamber 3. At this time, the valve 2 6 can be opened to send the wafer to the dry process machine in the vacuum working chamber 3 to start the dry process.

[0045] Reference Figure 1 to Figure 2 After the dry process is completed, the vacuum working chamber 3 returns to a high vacuum state. At this time, the vacuum degree in the sample loading chamber 2 is close to the vacuum degree in the vacuum working chamber 3. The valve 2 6 can be opened to send the wafer boat back to the sample loading chamber 2, and the valve 2 6 can be closed.

[0046] Reference Figure 1 to Figure 2 By adjusting the flow control valve 29 and the air pressure regulating valve 210, ensure that the nitrogen pressure inside the sample loading chamber 2 is positive relative to the external environment and negative relative to the wafer transfer pipeline 1. At this time, you can open valve 15, send the wafer boat back to the wafer transfer pipeline 1, wait for it to be transferred to the next station, and then close valve 5.

[0047] Reference Figure 1 to Figure 2, the workbench 4 includes a yellow light station workbench 4 and a wet process machine. The yellow light station workbench 4 includes a coating and developing machine 11 and a photolithography machine 13. The coating and developing machine 11 contains multiple tanks such as coating, developing, cleaning, and baking, and the wafers are transferred between the tanks by mechanical transfer. The coating and developing machine 11 is a closed machine with an independent nitrogen pipeline to supply nitrogen. A flow control valve three for adjusting the nitrogen flow is installed on the pipeline, and a pressure regulating valve three is installed at the same time. The two work together to accurately control the nitrogen pressure inside the coating and developing machine 11.

[0048] Reference Figure 1 to Figure 2 The coating and developing machine 11 is connected to the wafer transmission pipeline 1 through the valve 1 5, and the coating and developing machine 11 is connected to the photolithography machine 13 through the open track 12. A valve 3 14 is provided between the coating and developing machine 11 and the open track 12. The surface of the wafer coming out of the coating and developing machine 11 has been coated with photoresist, and the photoresist can effectively isolate the air, and no additional sealed wafer transmission pipeline 1 is required. Similarly, the surface of the wafer coming out of the photolithography machine 13 is still covered with photoresist, and can also be transported back to the coating and developing machine 11 through the open track 12 for development.

[0049] Reference Figure 1 to Figure 2 When the wafer boat is transferred to the front end of the glue developer 11 through the wafer transfer pipeline 1, valve one 5 and valve three 14 are in a closed state. By adjusting the flow control valve three and the air pressure regulating valve three, it is ensured that the nitrogen pressure inside the glue developer 11 is positive pressure relative to the external environment and negative pressure relative to the wafer transfer pipeline 1. At this time, valve one 5 can be opened to send the wafer boat into the glue developer 11, and then valve one 5 can be closed. During the operation of the glue developer 11, it is still necessary to adjust the flow control valve three and the air pressure regulating valve three so that the nitrogen pressure inside the glue developer 11 is positive pressure relative to the external environment to ensure that the wafer is not directly exposed to the air at any time.

[0050] Reference Figure 1 to Figure 2 After the glue coating operation is completed, the nitrogen pressure inside the glue coating and developing machine 11 is positive relative to the external environment. The valve three 14 can be opened to transfer the wafer boat to the photolithography machine 13 through the open track 12 for exposure, and then the valve three 14 can be closed.

[0051] Reference Figure 1 to Figure 2 When the photolithography machine 13 completes the operation, the wafer boat will be transferred to the front end of valve three 14 through the open track 12. At this time, by adjusting the flow control valve three and the air pressure regulating valve three, the nitrogen pressure inside the coating and developing machine 11 is ensured to be positive relative to the external environment. The valve three 14 can be opened to transfer the wafer boat back to the coating and developing machine 11 for development, and then the valve three 14 can be closed.

[0052] Reference Figure 1 to Figure 2When the development operation is completed, by adjusting the flow control valve three and the air pressure regulating valve three, ensure that the nitrogen pressure inside the machine is positive relative to the external environment and negative relative to the wafer transfer pipeline 1. At this time, you can open valve 15, send the wafer boat to the wafer transfer pipeline 1, wait for it to be transferred to the next process station, and then close valve 15.

[0053] Reference Figure 1 to Figure 2 The wet process machines include but are not limited to: organic cleaning machines, acid-base etching machines, acid-base cleaning machines, electroplating machines, grinding machines, etc. The process machines can be multiple separate machines respectively connected to the wafer transfer pipeline 1.

[0054] Reference Figures 1 to 3 Preferably, the casting machine can also be an integrated machine with multiple casting processes. The workbench 4 includes a table body 18, and a plurality of processing tanks 19 for performing different process steps are arranged in the table body 18. Machines such as organic cleaning table, acid-base etching table, acid-base cleaning table, electroplating machine, grinding machine, etc. are respectively installed in different processing tanks 19. A manipulator is provided in the workbench 4 for grabbing the wafer boat and transferring it in different processing tanks 19 and wafer transfer pipelines 1. The processing tanks 19 are interconnected with each other for nitrogen circulation, and one of the processing tanks 19 is connected to the gas outlet main for nitrogen outflow.

[0055] Reference Figures 3 to 5 , an air intake manifold 20 for introducing nitrogen is provided at the bottom of the table 18, and the air intake manifold 20 passes through all the processing tanks 19. An air intake branch pipe 21 is independently provided in each processing tank 19, and the lower end of the air intake branch pipe 21 is connected to the air intake manifold 20. An electric control valve is installed in the air intake branch pipe 21. A processing table 22 for carrying a wafer boat is fixed in the center of the processing tank 19, and a touch switch for touching the wafer boat is provided on the processing table 22, and the electric control valve and the touch switch are electrically connected. When the wafer is processed in one of the processing tanks 19, the wafer boat is placed on the processing table 22, the touch switch is turned on, the electric control valve in the processing tank 19 opens the air intake branch pipe 21, and the protective gas flows from the processing tank 19 and flows to other processing tanks 19. When the wafer moves to other processes, that is, moves to other processing tanks 19, the electric control valve in the original processing tank 19 is closed, and the electric control valve in the new processing tank 19 is opened, and the protective gas flows out. That is, the protective gas always flows out from the processing tank 19 where the wafer is located, thereby ensuring that the protective gas pressure in the processing tank 19 where the wafer is located is always the highest when the wafer is being processed, thereby preventing oxygen from entering the processing tank 19 and affecting the processing of the wafer when some processing tanks 19 leak.

[0056] Reference Figures 4 to 5A hollow bottom plate 23 is fixed at the bottom of the processing tank 19, and a plurality of air outlet holes 24 are opened on the upper surface of the bottom plate 23. The upper end of the air intake branch pipe 21 is connected to the inside of the bottom plate 23. Nitrogen flows from the air intake manifold 20 into the air intake branch pipe 21, then into the bottom plate 23, and finally discharged from the air outlet holes 24. The discharged nitrogen is relatively uniform and stable.

[0057] Reference Figures 4 to 5 The upper surface of the bottom plate 23 is horizontally rotatably connected with a baffle plate 25 for opening and closing the air outlet 24. A transmission rod 26 penetrating the bottom plate 23 is fixed at the center of the baffle plate 25. The lower end of the transmission rod 26 is directly opposite to the intake branch pipe 21 and a plurality of transmission blades 27 are arranged on the side wall in a circumferentially inclined manner. When the intake branch pipe 21 is opened and nitrogen is ejected from the intake branch pipe 21, the transmission blades 27 are subjected to force to drive the transmission rod 26 and the baffle plate 25 to rotate.

[0058] Reference Figures 4 to 5 The baffle plate 25 is provided with a plurality of air holes 28 corresponding to the air outlet holes 24, and the baffle plate 25 is provided with an arc-shaped limiting groove 29. A limiting column 30 slidably connected to the limiting groove 29 is fixed on the bottom plate 23. A return spring 31 is provided between the limiting column 30 and the limiting groove 29. When the return spring 31 is in a natural state, the limiting column 30 is located at one end of the limiting groove 29, and the air outlet holes 24 are blocked by the baffle plate 25. When the limiting column 30 is located at the other end of the limiting groove 29, the air holes 28 and the air outlet holes 24 are directly opposite.

[0059] Reference Figures 4 to 5 When the air inlet branch pipe 21 is opened, the protective gas flows out from the air inlet branch pipe 21 and blows the transmission blade 27. The transmission blade 27 is rotated by force and drives the transmission rod 26 and the baffle 25 to rotate. The baffle 25 overcomes the elastic force of the reset spring 31 and rotates, so that the air vent 28 and the air outlet 24 are directly opposite, the air outlet 24 is opened, and the protective gas is ejected from the air outlet 24. At this time, the limiting column 30 is located at the end of the limiting groove 29, and the baffle is restricted and cannot continue to rotate. When the air inlet branch pipe 21 is closed, the baffle 25 is reset under the action of the reset spring 31, and the baffle 25 blocks and blocks the air outlet 24 to protect the air outlet 24, and also prevents the protective gas from flowing back from the air outlet 24 into the air inlet branch pipe 21.

[0060] The implementation principle of an automated production line for semiconductors in an embodiment of the present application is as follows: a wafer boat loaded with wafers enters a wafer transfer pipe 1 from a sample loading chamber 2, and after cleaning at an organic cleaning station, enters a coating and developing machine 11 to complete coating, is exposed by a photolithography machine 13, and then returns to the coating and developing machine 11 for development. After development, it is sent to an acid-base machine through a wafer transfer pipe 1 for acid-base etching, and after etching, it is sent to a PECVD machine 15 to grow a passivation layer. From then on, the wafer has completed a round of processing, and the surface is covered with a passivation layer, and can be taken out through the sample loading chamber 2.

[0061] The wafer with the passivation layer on the surface enters the wafer transfer pipeline 1 through the sample loading chamber 2, and after being cleaned by the organic cleaning station, enters the glue coating and developing machine 11 to complete the glue coating, is exposed by the photolithography machine 13, and then returns to the glue coating and developing machine 11 for development. After the development is completed, it is sent to the RIE machine 16 for acid-base etching through the wafer transfer pipeline 1. After the etching is completed, it is sent to the organic cleaning station for cleaning, and after cleaning, it is sent to the PECVD machine 15 to grow the passivation layer. After that, the wafer with the passivation layer on the surface can be taken out through the sample loading chamber 2.

[0062] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. An automated production line suitable for semiconductors, characterized in that: The invention comprises a wafer transmission pipeline (1) filled with protective gas, wherein a wafer boat for carrying wafers is arranged in the wafer transmission pipeline (1), and the wafer transmission pipeline (1) is connected to a plurality of sealed sample loading chambers (2) for extracting vacuum, wherein at least one sample loading chamber (2) is used for taking in and placing the wafer boat, and the remaining sample loading chambers (2) are connected to a vacuum working chamber (3), and the wafer transmission pipeline (1) is also connected to a plurality of sealed workbenches (4), a valve 1 (5) is arranged between the sample loading chamber (2) and the workbench (4) and the wafer transmission pipeline (1), and a valve 2 (6) is arranged between the sample loading chamber (2) and the vacuum working chamber (3); and a flow control valve is arranged on the wafer transmission pipeline (1). The sample loading chamber (2) and the workbench (4) are independently connected to an air pipe filled with protective gas, and the air pipe is provided with a flow control valve (9) and an air pressure regulating valve (10); the air pressure in the sample loading chamber (2) and the workbench (4) is lower than the air pressure in the wafer transmission pipeline (1), but higher than the external environment pressure; the workbench (4) comprises a coating and developing machine (11), the coating and developing machine (11) is connected to a photolithography machine (13) via an open track (12), a valve (14) is provided between the coating and developing machine (11) and the open track (12), and the open track (12) does not require an additional wafer transmission pipeline (1) for sealing.

2. The automated production line for semiconductors according to claim 1, characterized in that: At least three vacuum working chambers (3) are provided, and a PECVD machine (15), a RIE machine (16) and a MOCVD machine (17) are respectively provided in the vacuum working chamber (3).

3. The automated production line for semiconductors according to claim 1, characterized in that: The workbench (4) comprises a table body (18), wherein a plurality of processing grooves (19) for performing different process steps are arranged in the table body (18), wherein the processing grooves (19) are connected to each other, wherein an air intake main pipe (20) and an air outlet main pipe are arranged in the table body (18), wherein the air outlet main pipe is connected to one of the processing grooves (19), wherein each processing groove (19) is independently provided with an air intake branch pipe (21), and wherein all the air intake branch pipes (21) are connected to the air intake main pipe (20).

4. The automated production line for semiconductors according to claim 3, characterized in that: A processing table (22) for carrying a wafer boat is provided in the processing tank (19), a touch switch for contacting the wafer boat is provided on the processing table (22), an electric control valve is provided on the air intake branch pipe (21), and the electric control valve and the touch switch are electrically connected.

5. The automated production line for semiconductors according to claim 4, characterized in that: A bottom plate (23) is provided at the bottom of the processing tank (19), the air intake main pipe (20) is located below the bottom plate (23), the bottom plate (23) is hollow, a plurality of air outlet holes (24) are provided on the upper surface of the bottom plate (23), the lower end of the air intake branch pipe (21) is connected to the air intake main pipe (20), and the upper end of the air intake branch pipe (21) is connected to the inside of the bottom plate (23).

6. The automated production line for semiconductors according to claim 5, characterized in that: The bottom plate (23) is horizontally rotatably connected to a baffle plate (25), a transmission rod (26) penetrating the bottom plate (23) is fixed at the center of the baffle plate (25), the lower end of the transmission rod (26) is directly opposite to the air inlet branch pipe (21), and a plurality of transmission blades (27) are arranged on the side wall in a circumferentially inclined manner, a plurality of air holes (28) corresponding to the air outlet holes (24) are formed on the baffle plate (25), an arc-shaped limiting groove (29) is formed on the baffle plate (25), and the bottom plate A limiting column (30) is fixed on (23) and is slidably connected to the limiting groove (29). A return spring (31) is provided between the limiting column (30) and the limiting groove (29). When the return spring (31) is in a natural state, the limiting column (30) is located at one end of the limiting groove (29), and the air outlet (24) is blocked by the baffle (25). When the limiting column (30) is located at the other end of the limiting groove (29), the air vent (28) and the air outlet (24) are opposite to each other.

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