A pulsed laser induced bleaching method for semiconductor devices

Abstract

The present invention relates to the field of laser technology, and provides a method for bleaching a semiconductor device by pulse laser induction, comprising: determining the material category and morphological category of the semiconductor device; determining the laser parameters of the pulse laser input based on the material category and morphological category of the semiconductor device, wherein the laser parameters include laser pulse width, laser energy density, and laser repetition frequency; irradiating the semiconductor device with the pulse laser having the laser parameters to bleach it, and in response to the pulse laser irradiating the semiconductor device, the semiconductor device is bleached; in response to the pulse laser stopping irradiating the semiconductor device, the semiconductor device restores its initial performance. The present application can be used for semiconductors of corresponding materials and their detectors, and can be non-damaging and reversible without causing pixel saturation to cause photodetector failure, thereby improving the efficiency and effect of laser interference detector systems.

Description

Technical Field

[0001] The present application relates to the field of laser technology, and in particular to a pulse laser induced bleaching method for semiconductor devices. Background Art

[0002] Photodetectors play an important role in military, medical, aerospace and manufacturing industries. Their working bands cover the visible to infrared bands depending on the different semiconductor materials. Continuous lasers and pulsed lasers can cause different degrees of interference and damage to their detectors. The damage caused by point loss, line loss and blinding mainly depends on the irreversible destruction of internal semiconductor materials by the laser. Excessive photogenerated charge will cause pixel saturation and imaging interference of the detector. Therefore, existing lasers are all irreversible destructive interference to photodetectors. Once the interference is misplaced or misinterference occurs, the photodetector cannot be restored, which is bound to bring huge economic losses. Summary of the invention

[0003] This application proposes a pulsed laser induced bleaching method for semiconductor devices, so that the laser can reversibly irradiate the semiconductor detector to solve its irreversible technical problem. The details are as follows:

[0004] Some embodiments of the present application provide a pulsed laser induced bleaching method for a semiconductor device, comprising:

[0005] Determining the material category and morphology category of the semiconductor device;

[0006] Determining laser parameters input to the pulsed laser based on the material category and the morphology category of the semiconductor device, wherein the laser parameters include laser pulse width, laser energy density, and laser repetition frequency;

[0007] The semiconductor device is bleached by irradiating the semiconductor device with the pulse laser having the laser parameters. In response to the pulse laser irradiating the semiconductor device, the semiconductor device is bleached. In response to the pulse laser stopping irradiating the semiconductor device, the semiconductor device recovers the initial performance.

[0008] In some embodiments, when the morphology of the semiconductor device is a semiconductor substrate, the laser pulse width t p Less than the photogenerated carrier relaxation time t p0 , the photogenerated carrier relaxation time t p0 The following conditions must be met:

[0009]

[0010] Among them, t w,0 , t w,1 , C0, C1, C2, and C3 are all constants that change with the material.

[0011] In some embodiments, when the morphology of the semiconductor device is a semiconductor substrate, the laser energy density J satisfies the following conditions:

[0012]

[0013] Where J is the laser energy density, r is the spot radius, t p is the input laser pulse width, α(v) is the spectral absorption coefficient, v is the spectral frequency, N0 is the initial electron concentration of the semiconductor, and n t is the joint density of states of semiconductor materials, τ n is the electron relaxation time, t p0 is the relaxation time of photogenerated carriers, is the reduced Planck constant, E c is the conduction band energy level, E v is the valence band energy level, E F is the Fermi level, N is the electron concentration in the semiconductor that changes with time, T is the temperature, k B is the Boltzmann constant, and R is the reflectivity.

[0014] In some embodiments, when the morphology of the semiconductor device is a semiconductor substrate, the laser repetition frequency f satisfies the following conditions:

[0015] f=-181.2+48.41J+18.01t p

[0016] Where J is the laser energy density, t p is the input laser pulse width.

[0017] In some embodiments, when the semiconductor device is a semiconductor detector, the laser pulse width t p1 The following conditions must be met:

[0018] t p1 =τ n (n t +N0)+τ P (n t +P0)

[0019] Among them, τ n is the electron relaxation time, τ P is the hole relaxation time, n t is the joint state density of the semiconductor material, N0 is the initial electron concentration of the semiconductor, and P0 is the initial hole concentration of the semiconductor.

[0020] In some embodiments, when the semiconductor device is a semiconductor detector, the laser

[0021] Energy density J p The following conditions must be met:

[0022] Among them, J p is the laser energy density, r is the spot radius, t p is the input laser pulse width, α(v) is the spectral absorption coefficient, v is the spectral frequency, q is the mass of a single electron, N0 is the initial electron concentration of the semiconductor, and n t is the joint density of states of semiconductor materials, τ n is the electron relaxation time, J n is the electron current density in the semiconductor, t p0 is the relaxation time of photogenerated carriers, is the reduced Planck constant, E c is the conduction band energy level, E v is the valence band energy level, E F is the Fermi level, P is the hole concentration in the semiconductor that changes with time, N is the electron concentration in the semiconductor that changes with time, T is the temperature, k B is the Boltzmann constant, and R is the reflectivity.

[0023] In some embodiments, when the semiconductor device is a semiconductor detector, the laser repetition frequency f p The following conditions must be met:

[0024] f p =0.26+0.064J p -0.11t p1

[0025] Among them, J p is the laser energy density, t p1 is the input laser pulse width.

[0026] In some embodiments, the material category of the semiconductor device includes at least one of the following: silicon, germanium, indium arsenide, or mercury cadmium telluride;

[0027] The morphology of the semiconductor device includes at least one of the following: a silicon detector, a germanium detector, an indium arsenide detector, or a mercury cadmium telluride detector.

[0028] In some embodiments, when the material of the semiconductor device is silicon, germanium, indium arsenide or mercury cadmium telluride, the laser parameters are:

[0029] Silicon material: energy density is 12mJ / cm 2 ; Pulse width is 0.01ps; repetition frequency is 400GHz;

[0030] Germanium material: energy density is 4.2mJ / cm2 ; Pulse width is 1ps; repetition frequency is 40GHz;

[0031] Indium arsenide material: energy density is 0.17mJ / cm 2 ; Pulse width is 10ps; repetition frequency is 2GHz;

[0032] Mercury cadmium telluride material: energy density is 0.0005mJ / cm 2 ; Pulse width is 10ps; repetition frequency is 4GHz.

[0033] In some embodiments, when the semiconductor device is of the form of a silicon detector, a germanium detector, an indium arsenide detector or a mercury cadmium telluride detector, the laser parameters thereof are:

[0034] Silicon detector: energy density is 13mJ / cm 2 ; Pulse width is 10ns; repetition frequency is 0.025GHz;

[0035] Germanium detector: energy density is 3mJ / cm 2 ; Pulse width is 0.1ns; repetition frequency is 0.4GHz;

[0036] InAs detector: energy density 0.15mJ / cm 2 ; Pulse width is 1ns; repetition frequency is 0.04GHz;

[0037] Mercury cadmium telluride detector: energy density is 0.005mJ / cm 2 ; Pulse width is 0.1ns; repetition frequency is 0.04GHz.

[0038] Compared with the related art, the above solution of the embodiment of the present application has at least the following beneficial effects:

[0039] The present application provides a method for bleaching a semiconductor device by inducing a pulsed laser. The method provides the parameters of the pulsed laser when bleaching semiconductor materials and photodetectors, such as duration, repetition frequency and single pulse energy density, so that non-damaging and reversible interference can be performed on semiconductors of corresponding materials and their detectors without causing pixel saturation and photodetector malfunction, thereby improving the efficiency and effect of the laser interference detector system. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present application, and together with the specification, are used to explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0041] Figure 1 A flow chart of a pulsed laser induced bleaching method for a semiconductor device provided in some embodiments of the present application;

[0042] Figure 2 The carrier concentration and absorption coefficient change with time after ultrafast laser bleaching of semiconductor materials provided in some embodiments of the present application;

[0043] Figure 3 A schematic diagram of a photodetector equivalent circuit provided in some embodiments of the present application;

[0044] Figure 4 A graph showing the variation of carrier concentration and absorption coefficient over time after ultrafast laser bleaching of a photodetector provided in some embodiments of the present application;

[0045] Figure 5 System structure diagram of an ultrafast laser bleaching photodetector provided in some embodiments of the present application.

[0046] Description of reference numerals:

[0047] 1-PN junction; 2-bias voltage; 3-equivalent resistance; 4-pulsed laser; 5-energy meter; 6-photodetector; 7-beam splitter; 8-observation object. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0049] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings, and "multiple" generally includes at least two.

[0050] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0051] It should be understood that although the terms first, second, third, etc. may be used to describe in the embodiments of the present application, these should not be limited to these terms. These terms are only used to distinguish. For example, without departing from the scope of the embodiments of the present application, the first may also be referred to as the second, and similarly, the second may also be referred to as the first.

[0052] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a product or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such product or device. In the absence of more restrictions, the elements defined by the sentence "comprises a" do not exclude the presence of other identical elements in the product or device including the elements.

[0053] like Figure 1 As shown, some embodiments of the present application provide a pulsed laser induced bleaching method for semiconductor devices, including the following method steps:

[0054] Step S102: Determine the material category and morphology category of the semiconductor device;

[0055] Step S104: Determine laser parameters input into the pulse laser based on the material type and morphology type of the semiconductor device, wherein the laser parameters include laser pulse width, laser energy density, and laser repetition frequency;

[0056] Step S106: bleaching the semiconductor device by irradiating the pulse laser with the laser parameters. In response to the pulse laser irradiating the semiconductor device, the semiconductor device is bleached; in response to the pulse laser stopping irradiating the semiconductor device, the semiconductor device recovers its initial performance.

[0057] The present application proposes a method of using ultrafast laser to induce continuous bleaching of semiconductors to achieve optical blocking of detectors. When ultrafast pulsed laser acts on a semiconductor or semiconductor detector, it is different from traditional continuous lasers. It produces nonlinear effects that cause changes in the internal carriers of the semiconductor. The electrons in the valence band of the semiconductor excited by photons transition to the conduction band, which reduces the optical absorption coefficient of the semiconductor. The internal carrier relaxation process of the semiconductor induced by the pulsed laser is very short, usually on the femtosecond to nanosecond scale. This phenomenon of short-term impact on the absorption coefficient of the semiconductor is called bleaching, which in turn affects the photodetector. Since the pulse width of the ultrafast laser is very short, it causes the internal carrier relaxation time difference, which is less than the detector carrier relaxation time and meets a certain repetition frequency, the bleaching effect of the detector can be achieved.

[0058] The present application provides a method for bleaching a semiconductor device by inducing a pulsed laser. The method provides the parameters of the pulsed laser when bleaching semiconductor materials and photodetectors, such as duration, repetition frequency and single pulse energy density, so that non-damaging and reversible interference can be performed on semiconductors of corresponding materials and their detectors without causing pixel saturation and photodetector malfunction, thereby improving the efficiency and effect of the laser interference detector system.

[0059] In step S102, it is first necessary to determine the material category and morphology category of the semiconductor device, wherein the material category includes but is not limited to silicon, germanium, indium arsenide or mercury cadmium telluride. Different semiconductor materials have different parameter characteristics, and the parameters required for the bleaching pulse laser are also different; the morphology category includes semiconductor substrates and semiconductor detectors.

[0060] For semiconductor substrates, the ultrashort pulse laser acting on semiconductor materials is usually divided into a (photogenerated) carrier excitation process accompanied by photon absorption and ionization of the target material, a thermal energy process caused by carrier-carrier scattering and carrier-phonon scattering, and a carrier recombination process. The thermal energy process is a quasi-thermal equilibrium process of the carrier system, and most of the photogenerated carriers will be consumed in this process. The carrier recombination process includes Auger recombination and radiative recombination. The above process is a process in which the semiconductor material absorbs energy from the outside to excite the electrons therein from the ground state to the excited state or from the excited state to the ground state. The spectral absorption coefficient α(v) of the direct transition or indirect transition is expressed by the following formula

[0061] α(v)=A∑W if n v (E i ) c (E f )F(E p ) (1)

[0062] Where v is the spectral frequency, A is the modulation coefficient, W if is the transition probability, E i and E f are the initial and final energy levels, E p is the phonon energy, and the phonon interaction probability is F(E p ), to distinguish whether the transition is accompanied by phonons or whether the transition is an indirect band gap transition, and the probability of indirect band gap transition with phonons T is temperature, k B is the Boltzmann constant, n v and n c They are the initial state densities of valence band holes and conduction band electrons, which characterize the ability of the valence band and conduction band to provide holes and electrons, and can be given by the initial state density calculation formula

[0063]

[0064] where k B is the Boltzmann constant, E F is the Fermi level, h is Planck's constant, as well as is the effective mass of the hole and the electron.

[0065] Since the light source of the semiconductor bleaching process requires a low-energy ultrafast laser as the light source, the lattice temperature of the target material changes very little, so the limit of the carrier concentration that can be excited by the pulsed laser can be expressed by the joint state density in the spectral absorption model.

[0066]

[0067] The carrier reduced mass Reduced Planck constant E g is the energy level band gap.

[0068] Combining the relationship between the electron concentration N and the hole concentration P in ultrafast bandgap photonics and time t, a dynamic model suitable for low-energy pulsed laser bleaching semiconductors is established:

[0069]

[0070] Among them, t p0 is the relaxation time of photogenerated carriers, τ p and τ n are the hole relaxation time and electron relaxation time, N0 and P0 are the initial electron and hole concentrations of the semiconductor, N and P are the electron concentration and hole concentration that change with time t, and E is the photon energy. where t p is the pulse width of the laser, J is the single pulse energy density, R is the reflectivity, and z is the depth of light intrusion into the surface of the object.

[0071] In some embodiments, when the semiconductor device is a semiconductor substrate, the bleaching process of the semiconductor is to excite all the ground state electrons in the semiconductor and keep them at the upper energy level. It is necessary that the number of semiconductor self-consumption and the number of photogenerated carriers are equal to each other, so the pulse width t of the laser pulse laser p should be less than the relaxation time t of the photogenerated carriers p0 When the photogenerated carrier relaxation rate is 300K (Kelvin temperature), the photogenerated carrier relaxation time t p0 The following conditions must be met:

[0072]

[0073] Among them, t w,0 , t w,1, C0, C1, C2, and C3 are all constants that change with the material. These constants are mainly related to the electron effective mass, lattice constant, energy band gap, etc. of the semiconductor material, and can be obtained through Gaussian fitting based on the experimentally measured data.

[0074] In some embodiments, when the morphology of the semiconductor device is a semiconductor substrate, the minimum single pulse energy density J of laser excitation of all ground state electrons under a certain pulse width can be derived according to the carrier dynamics model of formula (6). The laser energy density J satisfies the following conditions:

[0075]

[0076] Where J is the laser energy density, r is the spot radius, t p is the input laser pulse width, α(v) is the spectral absorption coefficient, v is the spectral frequency, N0 is the initial electron concentration of the semiconductor, and n t is the joint density of states of semiconductor materials, τ n is the electron relaxation time, t p0 is the relaxation time of photogenerated carriers, is the reduced Planck constant, E c is the conduction band energy level, E v is the valence band energy level, E F is the Fermi level, N is the electron concentration in the semiconductor that changes with time, T is the temperature, k B is the Boltzmann constant, and R is the reflectivity.

[0077] In some embodiments, when the morphology of the semiconductor device is a semiconductor substrate, at a given laser pulse width t p After the laser energy density J is calculated, the laser repetition frequency f (in GHz) of laser-induced bleaching of semiconductor materials is given according to the semiconductor carrier dynamics model (Formula (5)), that is, the laser repetition frequency f satisfies the following conditions:

[0078] f=-181.2+48.41J+18.01t p (8)

[0079] Where J is the laser energy density, t p is the input laser pulse width.

[0080] Figure 2 The bleaching effects of the ultrafast laser parameters of silicon, germanium, indium arsenide and mercury cadmium telluride obtained by the inversion of this application, and the change of their carrier concentration (electrons or holes) over time. For example, as shown in silicon, it can be found that when the pulse laser acts on silicon, the transient absorption coefficient and carriers appear a lower value within 1ps and return to normal after 2ps. Therefore, if you want to maintain the bleaching effect, the laser repetition frequency can be 400GHz.

[0081] The laser parameters for inverting the sustained bleaching of the semiconductor are listed in Table 1.

[0082] Table 1. Continuous photobleaching laser parameters.

[0083] Continuous photobleaching laser parameters silicon germanium Indium Arsenide Mercury Cadmium Telluride <![CDATA[Energy density (mJ / cm 2 )]]> 12 4.2 0.17 0.0005 Pulse Width 0.01ps 1ps 10ps 10ps frequency 400GHz 40GHz 2GHz 4GHz

[0084] For semiconductor detectors, the carrier dynamics of ultrafast laser irradiation photodetectors are different from those of direct irradiation of semiconductors. Photodiodes are an important component of photodetectors, and the components of photodiodes mainly include semiconductor materials such as silicon, germanium, indium arsenide and mercury cadmium telluride. Photodetectors use the photosensitivity principle of photodiodes, which mainly rely on PN junctions to generate carriers (electron-hole pairs) in the space charge region (dissipation region) for light signals. Under the action of bias voltage, they move to the N-type doped region and the P-type doped region, destroying the dynamic electrostatic balance formed by carrier diffusion and drift motion, thereby generating photocurrent.

[0085] A PN junction with reverse bias 1 Figure 3 As shown, there is a circuit closed-loop system with a load resistor 3, a bias voltage 2 and a PN junction 1, wherein the PN junction 1 can be regarded as a capacitor in the circuit, so the analysis of this circuit system can reflect the response of the entire photodetector. In summary, the internal carrier dynamics process of the ultrafast laser irradiated photodetector is equivalent to adding a closed-loop circuit with voltage outside the semiconductor. Since the external voltage can change the relaxation time of the carriers in the conduction band, the recombination process of the internal carriers is greatly affected. The theoretical part of the dynamics process of the ultrafast laser irradiated photodetector mainly uses the Poisson and carrier continuity equations to correct the carrier dynamics equation (5):

[0086]

[0087] Where N d and N a are the concentrations of ionized donors and acceptors, q is the mass of a single electron, is the electric potential, the Auger recombination process

[0088] Compared with formula (5), the above formula (9) increases the carrier current density J generated by carrier electrons and holes n and J p

[0089]

[0090] Where D n\p and V n\pSince the semiconductor detector is equivalent to an external electric field acting on the semiconductor, the relaxation time of the photogenerated carriers of the semiconductor detector will also be corrected. Therefore, in some embodiments, when the morphology of the semiconductor device is a semiconductor detector, the laser pulse width t p1 The following conditions must be met:

[0091] t p1 =τ n (n t +N0)+τ P (n t +P0) (12)

[0092] Among them, τ n is the electron relaxation time, τ P is the hole relaxation time, n t is the joint state density of the semiconductor material, N0 is the initial electron concentration of the semiconductor, and P0 is the initial hole concentration of the semiconductor.

[0093] In some embodiments, when the semiconductor device is a semiconductor detector, the laser energy density J for laser-induced detector bleaching is given by the photodetector carrier dynamics model (Formula (9)): p , the laser energy density J p The following conditions must be met:

[0094]

[0095] Among them, J p is the laser energy density, r is the spot radius, t p is the input laser pulse width, α(v) is the spectral absorption coefficient, v is the spectral frequency, q is the mass of a single electron, N0 is the initial electron concentration of the semiconductor, and n t is the joint density of states of semiconductor materials, τ n is the electron relaxation time, J n is the electron current density in the semiconductor, t p0 is the relaxation time of photogenerated carriers, is the reduced Planck constant, E c is the conduction band energy level, E v is the valence band energy level, E F is the Fermi level, P is the hole concentration in the semiconductor that changes with time, N is the electron concentration in the semiconductor that changes with time, T is the temperature, k B is the Boltzmann constant, and R is the reflectivity.

[0096] In some embodiments, when the morphology of the semiconductor device is a semiconductor detector, the laser repetition frequency f for laser-induced detector bleaching is given by the photodetector carrier dynamics model (Formula (9)): p (unit: GHz) is the laser repetition frequency f p The following conditions must be met:

[0097] f p =0.26+0.064J p -0.11t p1 (14)

[0098] Among them, J p is the laser energy density, t p1 is the input laser pulse width.

[0099] Therefore, by substituting the existing parameters of the semiconductor into solving equation (9), the change in carrier concentration and the change in absorption coefficient can be obtained.

[0100] Table 2 shows the laser parameters that induce the persistent bleaching effect of silicon, germanium, indium arsenide and mercury cadmium telluride type photodetectors based on the above model. Figure 4 The effect of ultrafast pulse laser bleaching the photodetector is demonstrated. It can be found that the absorption coefficient changes significantly with the change of carriers. The bleaching effect caused by continuous optical blocking of the photodetector can be achieved by selecting the laser parameters in Table 2.

[0101] Table 2. Continuous bleaching laser parameters

[0102] Continuous bleaching laser parameters silicon germanium Indium Arsenide Mercury Cadmium Telluride <![CDATA[Energy density (mJ / cm 2 )]]> 13 3 0.15 0.005 Pulse Width 10ns 0.1ns 1ns 0.1ns frequency 0.025GHz 0.4GHz 0.04GHz 0.4GHz

[0103] The main parameters of silicon, germanium, indium arsenide and mercury cadmium telluride in this application are shown in Table 3 below:

[0104] Table 3. Parameters of different semiconductor materials

[0105]

[0106] Figure 5 An embodiment system of pulsed laser induced photodetector bleaching is given. A pulsed laser 4 carries a light beam with a certain repetition frequency, pulse width and energy density reflected by the bleaching method of the present application, and the transmitted light of the beam splitter 7 is irradiated on the photodetector 6, and the reflected light enters the energy meter 5 to observe the energy change to control and calibrate the laser energy density. The photodetector 6 that has collected information of the observed object 8 can no longer obtain the information of the observed object 8 after being irradiated, that is, continuous bleaching of the photodetector is achieved. After the pulsed laser 4 stops working, the detector resumes picking up the information of the observed object 8.

[0107] The present application provides a method for bleaching a semiconductor device by inducing a pulsed laser. The method provides the parameters of the pulsed laser when bleaching semiconductor materials and photodetectors, such as duration, repetition frequency and single pulse energy density, so that non-damaging and reversible interference can be performed on semiconductors of corresponding materials and their detectors without causing pixel saturation and photodetector malfunction, thereby improving the efficiency and effect of the laser interference detector system.

[0108] Finally, it should be noted that: each embodiment in this specification is described by way of example, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the system or device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0109] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A pulsed laser induced bleaching method for semiconductor devices, characterized in that ,include: Determining the material category and morphology category of the semiconductor device; Determining laser parameters input to the pulsed laser based on the material category and the morphology category of the semiconductor device, wherein the laser parameters include laser pulse width, laser energy density, and laser repetition frequency; bleaching the semiconductor device by irradiating the semiconductor device with the pulse laser having the laser parameters, wherein the semiconductor device is bleached in response to the pulse laser irradiating the semiconductor device; and the semiconductor device recovers the initial performance in response to the pulse laser stopping irradiating the semiconductor device; When the semiconductor device is a semiconductor substrate, the laser pulse width Shorter than the relaxation time of photogenerated carriers , the photogenerated carrier relaxation time The following conditions must be met: ； in, , , , , , are constants that vary with the material; When the semiconductor device is a semiconductor substrate, the laser energy density The following conditions must be met: ; in, is the laser energy density, is the spot radius, is the input laser pulse width, is the spectral absorption coefficient, is the spectral frequency, is the initial electron concentration of the semiconductor, is the joint density of states of semiconductor materials, is the electron relaxation time, is the relaxation time of photogenerated carriers, is the reduced Planck constant, is the conduction band energy level, is the valence band energy level, is the Fermi level, N is the electron concentration in the semiconductor that changes with time, T is the temperature, is the Boltzmann constant, R is the reflectivity; When the semiconductor device is a semiconductor substrate, the laser repetition frequency The following conditions must be met: ； in, is the laser energy density, is the input laser pulse width.

2. The pulse laser induced bleaching method of semiconductor device according to claim 1, characterized in that When the semiconductor device is a semiconductor detector, the laser pulse width The following conditions must be met: ； in, is the electron relaxation time, is the hole relaxation time, The joint density of states of semiconductor materials, is the initial electron concentration of the semiconductor, is the initial hole concentration of the semiconductor.

3. The pulse laser induced bleaching method of semiconductor device according to claim 1, characterized in that , when the semiconductor device is a semiconductor detector, the laser energy density The following conditions must be met: ； ； in, is the laser energy density, is the spot radius, is the input laser pulse width, is the spectral absorption coefficient, is the spectral frequency, q is the mass of a single electron, is the initial electron concentration of the semiconductor, is the joint density of states of semiconductor materials, is the electron relaxation time, is the electron current density in the semiconductor, is the relaxation time of photogenerated carriers, is the reduced Planck constant, is the conduction band energy level, is the valence band energy level, is the Fermi level, P is the hole concentration in the semiconductor that changes with time, N is the electron concentration in the semiconductor that changes with time, T is the temperature, is the Boltzmann constant, and R is the reflectivity.

4. The pulse laser induced bleaching method of semiconductor device according to claim 1, characterized in that , when the semiconductor device is a semiconductor detector, the laser repetition frequency The following conditions must be met: ; in, is the laser energy density, is the input laser pulse width.

5. The pulse laser induced bleaching method of semiconductor device according to any one of claims 1 to 4, characterized in that , the material category of the semiconductor device includes at least one of the following: silicon, germanium, indium arsenide or mercury cadmium telluride; the morphology category of the semiconductor device includes at least one of the following: silicon detector, germanium detector, indium arsenide detector or mercury cadmium telluride detector.

6. The pulse laser induced bleaching method of semiconductor device according to claim 5, characterized in that , When the material of the semiconductor device is silicon, germanium, indium arsenide or mercury cadmium telluride, the laser parameters are as follows; Silicon material: energy density is 12 mJ / cm 2 ; Pulse width is 0.01ps; repetition frequency is 400GHz; Germanium material: energy density is 4.2mJ / cm 2 ; Pulse width is 1ps; repetition frequency is 40GHz; Indium arsenide material: energy density is 0.17 mJ / cm 2 ; Pulse width is 10ps; repetition frequency is 2GHz; Mercury cadmium telluride material: energy density is 0.0005 mJ / cm 2 ; Pulse width is 10ps; repetition frequency is 4GHz.

7. The pulse laser induced bleaching method of semiconductor device according to claim 5, characterized in that , When the semiconductor device is of the form factor of: silicon detector, germanium detector, indium arsenide detector or mercury cadmium telluride detector, its laser parameters are: Silicon detector: energy density 13 mJ / cm 2 ; Pulse width is 10ns; repetition frequency is 0.025GHz; Germanium detector: energy density is 3mJ / cm 2 ; Pulse width is 0.1ns; repetition frequency is 0.4GHz; InAs detector: energy density 0.15 mJ / cm 2 ; Pulse width is 1ns; repetition frequency is 0.04GHz; Mercury cadmium telluride detector: energy density is 0.005 mJ / cm 2 ; Pulse width is 0.1ns; repetition frequency is 0.04GHz.

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