High temperature characteristics testing method, device and readable storage medium of semiconductor device

Abstract

The present application relates to the field of semiconductor device testing technology, and specifically provides a high temperature characteristic testing method, device and readable storage medium for semiconductor devices, the high temperature characteristic testing method comprising: applying a preheating current to the semiconductor device; applying a test current and / or a test voltage to the semiconductor device to perform a high temperature characteristic test on the semiconductor device; in response to the end of the test, applying a small signal current to the semiconductor device and obtaining the current junction temperature of the semiconductor device; based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time, predicting the test junction temperature of the semiconductor device at the moment of the end of the test; based on the test junction temperature and the target test temperature, determining whether the current round of testing is valid; if so, ending the test and generating a test result; if not, correcting the current value of the preheating current and returning to the step of applying the preheating current to the semiconductor device. In the above manner, the present application can improve the accuracy of the high temperature characteristic test of semiconductor devices.

Description

Technical Field

[0001] The present application relates to the field of semiconductor device testing technology, and in particular to a high-temperature characteristic testing method, equipment and readable storage medium for semiconductor devices. Background Art

[0002] In order to ensure the performance and reliability of semiconductor devices, it is necessary to test the characteristic parameters of semiconductor devices at high temperatures (hereinafter referred to as "high temperature characteristic parameters"). DSON )、IGBT saturation voltage drop(Collector-Emitter saturation voltage,V CE（sat） )、Diode Forward Voltage(V SD )、Forward Transconductance(Forward Transconductance,G FS ) and other characteristic parameters, the semiconductor device is placed on a heating table, and the heating table is used to heat the semiconductor device as a whole to the target test temperature, and then a test current and voltage are applied to the semiconductor device to test the high temperature characteristic parameters. However, when the test current passes through the semiconductor device, heat will occur, causing the junction temperature of the semiconductor device to exceed the target test temperature during the test, thereby affecting the accuracy of the test results.

[0003] Therefore, how to control the test junction temperature of semiconductor devices to improve the accuracy of high temperature characteristic testing of semiconductor devices has become a technical problem that needs to be solved urgently. Summary of the invention

[0004] In view of this, the present application provides a method, an apparatus and a readable storage medium for testing high temperature characteristics of a semiconductor device, which can improve the accuracy of high temperature characteristics testing of a semiconductor device.

[0005] To solve the above technical problems, on the one hand, the present application provides a high-temperature characteristics testing method for a semiconductor device, comprising: applying a preheating current to the semiconductor device; applying a test current and / or a test voltage to the semiconductor device to perform a high-temperature characteristics test on the semiconductor device; in response to the end of the test, applying a small signal current to the semiconductor device and obtaining the current junction temperature of the semiconductor device; based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time, predicting the test junction temperature of the semiconductor device at the moment the test ends, wherein the test end time is the time interval between the acquisition time of the current junction temperature and the test end time; based on the test junction temperature and the target test temperature, determining whether this round of testing is valid; if so, ending the test and generating a test result; if not, correcting the current value of the preheating current and returning to the step of applying the preheating current to the semiconductor device.

[0006] According to some embodiments of the present application, the step of determining whether the current round of testing is valid based on the test junction temperature and the target test temperature includes: determining whether the difference between the test junction temperature and the target test temperature falls within a preset error range; if so, determining that the current round of testing is valid; if not, determining that the current round of testing is invalid.

[0007] According to some embodiments of the present application, the step of correcting the current value of the preheating current includes: correcting the current value of the preheating current based on the difference between the test junction temperature and the target test temperature; wherein, when the difference is a positive number, reducing the current value of the preheating current by a first preset step size; and when the difference is a negative number, increasing the current value of the preheating current by a second preset step size.

[0008] According to some embodiments of the present application, the first preset step size is positively correlated with the numerical value of the difference, and the second preset step size is negatively correlated with the numerical value of the difference.

[0009] According to some embodiments of the present application, the step of obtaining the current junction temperature of a semiconductor device includes: obtaining a K coefficient of the semiconductor device, wherein the K coefficient is used to characterize the relationship between the device junction temperature and the device voltage; collecting the voltage across a body diode in the semiconductor device; and determining the current junction temperature of the semiconductor device based on the K coefficient and the voltage across the body diode.

[0010] According to some embodiments of the present application, the step of predicting the test junction temperature of a semiconductor device at the moment the test ends based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end duration includes: determining the temperature difference prediction coefficient based on the first junction temperature of the semiconductor device at the first moment, the second junction temperature at the second moment and the time interval between the first moment and the second moment; wherein, at the first moment and the second moment, a small signal current is applied to the semiconductor device; determining the junction temperature change value based on the temperature difference prediction coefficient and the test end duration; and determining the test junction temperature of the semiconductor device at the moment the test ends based on the junction temperature change value and the current junction temperature.

[0011] According to some embodiments of the present application, the step of determining the junction temperature change value based on the temperature difference prediction coefficient and the test end time includes: determining the junction temperature change value using the following formula (1):

[0012]

[0013] In the above formula (1), ΔT(t1) refers to the junction temperature change value, X refers to the temperature difference prediction coefficient, and t1 refers to the test completion time.

[0014] According to some embodiments of the present application, the current value of the small signal current is less than or equal to the minimum current value required for the semiconductor device to generate heat.

[0015] In a second aspect, an embodiment of the present application provides an electronic device, comprising: a processor; and a memory, wherein computer program instructions are stored in the memory.

[0016] When the computer program instructions are executed by the processor, the processor executes the high temperature characteristic testing method of the semiconductor device as described in the above technical solution.

[0017] In a third aspect, an embodiment of the present application provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, the processor executes the high-temperature characteristics testing method of a semiconductor device as described in the above technical solution.

[0018] The above technical solution of the present application has at least one of the following beneficial effects: by adopting the preheating current correction method to accurately control the test junction temperature of the semiconductor device, a stable high-temperature test environment is provided for the semiconductor device, thereby improving the accuracy of the high-temperature characteristic test of the semiconductor device, making the test result more accurate. Moreover, by referring to the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time, the accurate test junction temperature can be predicted, the accuracy of the judgment of the test effectiveness is improved, and the test accuracy is further improved.

[0019] In addition, the first preset step size may be positively correlated with the numerical value of the difference, and the second preset step size may be negatively correlated with the numerical value of the difference. In this way, dynamic adjustment of the preheating current can be achieved, thereby improving the efficiency and accuracy of the preheating current correction.

[0020] In addition, the temperature difference prediction coefficient of the semiconductor device is first determined, and then the temperature change of the semiconductor device after the test is completed is determined based on the temperature difference prediction coefficient and the test completion time, and then the test junction temperature is further derived in combination with the current junction temperature, which can improve the prediction accuracy of the test junction temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A flowchart of a high temperature characteristics testing method for a semiconductor device according to an embodiment of the present application;

[0022] Figure 2 A flowchart of the step of obtaining the current junction temperature of a semiconductor device in the high temperature characteristic testing method of a semiconductor device according to an embodiment of the present application;

[0023] Figure 3 A flowchart of the steps of predicting the test junction temperature of the semiconductor device at the moment of test completion based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test completion duration in the high temperature characteristic test method of the semiconductor device according to the embodiment of the present application;

[0024] Figure 4 A schematic diagram of an electronic device according to an embodiment of the present application. DETAILED DESCRIPTION

[0025] The specific implementation methods of the present application will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present application but are not intended to limit the scope of the present application.

[0026] The purpose of high temperature characteristic test is to test the high temperature characteristic parameters of semiconductor devices. The semiconductor devices to be tested for high temperature characteristic test may include but are not limited to silicon-based power devices and silicon carbide power devices. High temperature characteristic parameters may include but are not limited to the R DSON 、V SD and G FS It is understandable that the present application does not limit the high temperature characteristic parameters and the types of semiconductor devices.

[0027] At present, when testing the high temperature characteristic parameters of semiconductor devices, the semiconductor device is placed on a heating table, and the heating table is used to heat the semiconductor device as a whole to the target test temperature, and then a test current is applied to the semiconductor device to test the high temperature characteristic parameters. However, when the test current passes through the semiconductor device, heat will occur, causing the junction temperature of the semiconductor device to exceed the target test temperature during the test, thereby affecting the accuracy of the test results.

[0028] Therefore, how to control the test junction temperature of semiconductor devices to improve the accuracy of high temperature characteristic testing of semiconductor devices has become a technical problem that needs to be solved urgently.

[0029] In order to solve the above technical problems, the present application proposes a method for testing the high temperature characteristics of a semiconductor device, and the specific steps include: first applying a preheating current to the semiconductor device to heat the semiconductor device, and then performing a high temperature characteristics test on the semiconductor device. In response to the end of the test, the test junction temperature of the semiconductor device at the moment the test ends is predicted, and whether the test result is valid is determined based on the test junction temperature. Moreover, when it is determined that the test result is invalid, the current value of the preheating current applied to the semiconductor device is corrected, and the semiconductor device is retested until a valid test result is generated.

[0030] The high temperature characteristic test method proposed in this application uses a preheating current correction method to accurately control the test junction temperature of the semiconductor device, providing a stable high temperature test environment for the semiconductor device, thereby improving the accuracy of the high temperature characteristic test of the semiconductor device and making the test result more accurate. The high temperature characteristic test method of the semiconductor device proposed in this application is introduced in detail below.

[0031] like Figure 1 As shown, the high temperature characteristic testing method of the semiconductor device of the embodiment of the present application includes:

[0032] Step 110: Apply a preheating current to the semiconductor device.

[0033] In one example, the current value of the preheating current is lower than the current value required for the junction temperature of the semiconductor device to reach the target test temperature, so as to reserve temperature rise space for the test current and / or test voltage required to be applied for subsequent high-temperature characteristic testing, so that the junction temperature of the semiconductor device during the high-temperature characteristic testing is close to the target test temperature.

[0034] The target test temperature generally does not exceed the maximum temperature that the semiconductor device can withstand during normal operation. The specific value of the target test temperature can be determined based on the factory parameters or test specifications of the semiconductor device and is not limited here. In one example, the current value of the preheating current can be taken as 10A, but the present application is not limited thereto. The specific current value of the preheating current can be set according to actual needs.

[0035] For the convenience of description, this application takes "applying a preheating current to a semiconductor device" as an example for explanation. In actual application, the semiconductor device may be heated by applying a preheating current and / or a preheating voltage to the semiconductor device according to the actual application situation. It can be understood that when a preheating voltage is applied to the semiconductor device, the voltage value of the preheating voltage may be lower than the voltage value required for the junction temperature of the semiconductor device to reach the target test temperature.

[0036] Step 120: Apply a test current and / or a test voltage to the semiconductor device to perform a high temperature characteristic test on the semiconductor device.

[0037] According to the test items (such as on-resistance test, body diode forward voltage drop test or forward transconductance test, etc.), the test current and / or test voltage can be selected to be applied to the semiconductor device, wherein the current value of the test current and the voltage value of the test voltage can be set according to the factory parameters and test items of the semiconductor device, and are not limited here.

[0038] For example, in an example of testing the on-resistance of a semiconductor device, a test voltage at the maximum steady-state driving voltage value between the gate and source allowed before the device leaves the factory can be applied to the semiconductor device, and a test current at the maximum drain-source current value allowed to pass between the drain and source when the device is operating normally can be applied.

[0039] Step 130 : In response to the test being completed, applying a small signal current to the semiconductor device and acquiring a current junction temperature of the semiconductor device.

[0040] In response to the end of the test, a small signal current is applied to the semiconductor device to determine the current junction temperature of the semiconductor device, thereby providing a prerequisite for subsequent prediction of the test junction temperature of the semiconductor device at the moment of the end of the test.

[0041] Specifically, "test end" means stopping the application of test current and / or test voltage to the semiconductor device. In one example, a small signal current can be applied to the semiconductor device at the moment the test ends, thereby improving the prediction accuracy of the test junction temperature. In one example, a small signal current can be applied to the semiconductor device within a preset time period after the test ends, wherein the value of the preset time period is based on the change in the junction temperature of the semiconductor device being as small as possible. For example, within 100us after the end of the test, the junction temperature of the semiconductor device only drops by less than 3°C, which is within the normal temperature change range. At this time, the preset time period can be set to 100us. By setting the preset time period, it is possible to adapt test instruments with different response times while ensuring the prediction accuracy, thereby expanding the scope of application of the test method.

[0042] In one embodiment, the current value of the small signal current is less than or equal to the minimum current value required for the semiconductor device to generate heat. In other words, when the small signal current is applied to the semiconductor device, the semiconductor device will not generate heat. In this way, the accuracy of the subsequent test junction temperature prediction can be improved. In one example, the current value of the small signal current can be taken as 50mA. It can be understood that the current value of the small signal current can be determined according to the factory parameters of the semiconductor device, and the current value of the small signal current is not limited here.

[0043] Step 140: predicting the test junction temperature of the semiconductor device at the moment the test ends based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time.

[0044] The temperature difference prediction coefficient of the semiconductor device can characterize the degree of thermal diffusion of the semiconductor device. The test end time is the time interval between the acquisition time of the current junction temperature and the test end time. The specific steps of predicting the test junction temperature of the semiconductor device at the moment of the test end are described in detail in the following embodiments and will not be described in detail here.

[0045] Step 150: Determine whether this round of testing is valid based on the test junction temperature and the target test temperature.

[0046] By testing the junction temperature and the target test temperature, it can be determined whether the test junction temperature of the semiconductor device during the test is consistent with the target test temperature. If the test junction temperature is consistent with the target test temperature, it means that this round of testing is more accurate and this round of testing is valid; if the test junction temperature is inconsistent with the target test temperature, it means that a large error occurs in this round of testing and this round of testing is invalid.

[0047] In one embodiment, it can be determined whether the difference between the test junction temperature and the target test temperature falls within a preset error range. If the difference falls within the preset error range, the current round of testing is determined to be valid; if the difference does not fall within the preset error range, the current round of testing is determined to be invalid.

[0048] It can be understood that the preset error interval can be set according to the actual accuracy requirements, and the preset error interval is not limited here. In one example, the preset error interval can be set to [-0.1, 0.1] ° C. If the target test temperature is 175 ° C and the test junction temperature is 174 ° C, it means that this round of testing is invalid. In one example, the preset error interval can be set to [-1, 1] ° C. If the target test temperature is 175 ° C and the test junction temperature is 174 ° C, it means that this round of testing is valid.

[0049] Step 160: If this round of testing is valid, the testing is terminated and the test results are generated.

[0050] Step 170: If the current round of testing is invalid, the current value of the preheating current is corrected, and the process returns to the step of applying the preheating current to the semiconductor device.

[0051] If this round of testing is invalid, it means that the test results generated by this round of testing are inaccurate. Therefore, it is necessary to correct the current value of the preheating current so that the test junction temperature is close to the target test temperature, and retest the semiconductor device until accurate test results are generated.

[0052] Here, "re-testing the semiconductor device" means returning to the step of applying the preheating current to the semiconductor device, that is, re-performing the above steps 120 to 170 using the corrected preheating current. Specifically, the corrected preheating current is applied to the semiconductor device to reheat the semiconductor device, and then subsequent steps 120 to 170 are performed to perform high temperature characteristic tests on the semiconductor device and detect the effectiveness of this round of testing until effective testing is completed.

[0053] This embodiment uses a preheating current correction method to accurately control the test junction temperature of the semiconductor device, providing a stable high-temperature test environment for the semiconductor device, thereby improving the accuracy of the high-temperature characteristic test of the semiconductor device and making the test result more accurate. In addition, by referring to the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time, the accurate test junction temperature can be predicted, the accuracy of the judgment of the test effectiveness is improved, and the test accuracy is further improved.

[0054] In one embodiment, the step of correcting the current value of the preheating current in the above step 170 may specifically include: based on the difference between the test junction temperature and the target test temperature, correcting the current value of the preheating current. Specifically, when the difference is a positive number, it means that the test junction temperature of this round of test is too large, and the current value of the preheating current is reduced by a first preset step size to reduce the test junction temperature. When the difference is a negative number, it means that the test junction temperature of this round of test is too small, and the current value of the preheating current is increased by a second preset step size to increase the test junction temperature.

[0055] It can be understood that the first preset step size and the second preset step size can be the same or different, and the values ​​of the first preset step size and the second preset step size can be set according to actual conditions. In one example, the sum of the first preset step size or the second preset step size and the current value of the preheating current can be less than the rated current of the semiconductor device, thereby protecting the semiconductor device from damage, and improving the safety and stability of the test while ensuring the test accuracy.

[0056] In one embodiment, the first preset step size may be positively correlated with the numerical value of the difference. In other words, when the test junction temperature is greater than the target test temperature, the larger the test junction temperature, the larger the first preset step size, so as to achieve coarse adjustment of the preheating current, so that the test junction temperature can quickly approach the target test temperature. When the test junction temperature is greater than the target test temperature, the smaller the test junction temperature, the smaller the first preset step size, so as to achieve fine adjustment of the test junction temperature, so that the correction of the preheating current can be more accurate. The second preset step size may be negatively correlated with the numerical value of the difference. In other words, when the test junction temperature is less than the target test temperature, the smaller the test junction temperature, the larger the second preset step size, so as to achieve coarse adjustment of the test junction temperature. When the test junction temperature is less than the target test temperature, the larger the test junction temperature, the smaller the first preset step size, so as to achieve fine adjustment of the test junction temperature.

[0057] The above method can realize dynamic adjustment of the preheating current, thereby improving the efficiency and accuracy of the preheating current correction.

[0058] In one example, the specific values ​​of the first preset step size and the second preset step size can be determined according to the size of the difference. For example, the current value of the preheating current is 10A, the target test temperature is 175°C, and the test junction temperature is 165°C. In this test, the test junction temperature is lower than the target test temperature, and the difference between the test junction temperature and the target test temperature is -10°C. At this time, the current value required to increase the temperature by 10°C can be used as the second preset step size to increase the current value of the preheating current so that the test junction temperature in the next test is increased to 175°C.

[0059] It can be understood that in other examples, the increase / decrease range of the first preset step size and the second preset step size can be set according to actual needs. For example, for every 1°C change in the difference, the first preset step size or the second preset step size can increase / decrease by 1A, which is not limited here.

[0060] The specific embodiments of the above steps 130 and 140 are described in detail below.

[0061] In one embodiment, if Figure 2 As shown, the above step 130, i.e., the step of obtaining the current junction temperature of the semiconductor device, includes:

[0062] Step 131: Obtain the K factor of the semiconductor device.

[0063] The K coefficient is used to characterize the relationship between the junction temperature of the device and the device voltage. Specifically, before the steps of the high temperature characteristics test method of the semiconductor device proposed in the embodiment of the present application are performed, the voltage drop generated by the body diode of the semiconductor device when a small signal current passes through the semiconductor device at different junction temperatures can be tested by a conventional K coefficient measurement method in the technical field, thereby generating the K coefficient of the semiconductor device. The K coefficient measurement method is not limited or detailed herein.

[0064] Step 132: Collect the voltage across the body diode in the semiconductor device.

[0065] In response to applying a small signal current to the semiconductor device, a voltage across a body diode in the semiconductor device is acquired by using a measuring instrument.

[0066] Step 133: Based on the K coefficient and the voltage across the body diode, determine the current junction temperature of the semiconductor device.

[0067] Based on the relationship between the device junction temperature and the device voltage represented by the K coefficient, the device junction temperature corresponding to the voltage across the body diode is found and used as the current junction temperature of the semiconductor device.

[0068] After the current junction temperature of the semiconductor device is determined through the above steps 131 to 133, it is necessary to further predict the test junction temperature of the semiconductor device at the moment when the test ends through the above step 140. Specifically, the test junction temperature of the semiconductor device can be predicted based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time. The specific processing process is as follows: Figure 3 The following steps in the process are shown.

[0069] Step 141: Determine a temperature difference prediction coefficient based on a first junction temperature of the semiconductor device at a first moment, a second junction temperature of the semiconductor device at a second moment, and a time interval between the first moment and the second moment.

[0070] At the first moment and the second moment, a small signal current is applied to the semiconductor device, or in other words, the first moment and the second moment are two moments after the small signal current is applied to the semiconductor device. Specifically, since the small signal current is applied to the semiconductor device, the first junction temperature of the semiconductor device at the first moment and the second junction temperature at the second moment can be determined based on the K coefficient and the voltage across the body diode.

[0071] In one embodiment, the temperature difference prediction coefficient may be determined using the following formula (2):

[0072]

[0073] In the above formula (2), ΔT(t2) refers to the difference between the first junction temperature and the second junction temperature, and t2 refers to the time interval between the first moment and the second moment.

[0074] Step 142: Determine the junction temperature change value based on the temperature difference prediction coefficient and the test end time.

[0075] The temperature difference prediction coefficient of the semiconductor device can characterize the degree of heat diffusion of the semiconductor device. Through the temperature difference prediction coefficient of the semiconductor device and the test completion time, the temperature change value generated by the semiconductor device after the test is completed to date can be determined.

[0076] In one embodiment, the junction temperature change value may be determined using the following formula (1):

[0077]

[0078] In the above formula (1), ΔT(t1) refers to the junction temperature change value, and t1 refers to the test completion time.

[0079] Step 143: Determine the test junction temperature of the semiconductor device at the moment when the test ends based on the junction temperature change value and the current junction temperature.

[0080] By using the temperature change value generated by the semiconductor device since the end of the test and the current junction temperature of the semiconductor device at the current moment, the test junction temperature at the moment of the end of the test can be accurately derived. For example, the current junction temperature determined by the above step 130 is 160°C, and the temperature change value calculated by the above step 141 is 10°C, from which the test junction temperature can be derived to be 160°C+10°C=170°C.

[0081] This embodiment first determines the temperature difference prediction coefficient of the semiconductor device, and then determines the temperature change of the semiconductor device after the test is completed based on the temperature difference prediction coefficient and the test completion time, and then further derives the test junction temperature in combination with the current junction temperature, which can improve the prediction accuracy of the test junction temperature.

[0082] An embodiment of the present application also provides an electronic device, which includes a processor and a memory, wherein the memory stores at least one instruction or at least one program, and the at least one instruction or the at least one program is loaded and executed by the processor to implement a high-temperature characteristics testing method for a semiconductor device as provided in the above method embodiment.

[0083] The memory can be used to store software programs and modules. The processor executes various functional applications and data processing by running the software programs and modules stored in the memory. The memory can mainly include a program storage area and a data storage area, wherein the program storage area can store an operating system, application programs required for functions, etc.; the data storage area can store data created according to the use of the device, etc. In addition, the memory can include a high-speed random access memory and can also include a non-volatile memory, such as at least one disk storage device, a flash memory device, or other volatile solid-state storage devices. Accordingly, the memory can also include a memory controller to provide the processor with access to the memory.

[0084] In a specific embodiment, Figure 4 A schematic diagram of the structure of an electronic device for implementing the embodiment of the present application is shown, and the electronic device may be a computer terminal, a mobile terminal or other devices.

[0085] like Figure 4 As shown, an embodiment of the present application provides an electronic device 400, including: a processor 401 and a memory 402, in which computer program instructions are stored, wherein when the computer program instructions are executed by the processor, the processor 401 executes the high temperature characteristics testing method of the semiconductor device as described in the above embodiment.

[0086] Furthermore, if Figure 4 As shown, the electronic device 400 further includes a network interface 403 , an input device 404 , a hard disk 405 , and a display device 406 .

[0087] The above-mentioned interfaces and devices can be interconnected through a bus architecture. The bus architecture can be a bus and bridge that can include any number of interconnected buses. Specifically, various circuits of one or more central processing units (CPUs) represented by processor 401 and one or more memories represented by memory 402 are connected together. The bus architecture can also connect various other circuits such as peripheral devices, voltage regulators, and power management circuits together. It can be understood that the bus architecture is used to achieve connection and communication between these components. In addition to the data bus, the bus architecture also includes a power bus, a control bus, and a status signal bus, which are all well known in the art, so they will not be described in detail herein.

[0088] The network interface 403 can be connected to a network (such as the Internet, a local area network, etc.), obtain relevant data from the network, and save it in the hard disk 405.

[0089] The input device 404 can receive various instructions input by the operator and send them to the processor 401 for execution. The input device 404 can include a keyboard or a pointing device, such as a mouse, a trackball, a touch pad or a touch screen.

[0090] The display device 406 can display the result obtained by the processor 401 executing the instruction.

[0091] The memory 402 is used to store programs and data necessary for the operation of the operating system, as well as data such as intermediate results during the calculation process of the processor 401.

[0092] It is understood that the memory 402 in the embodiment of the present application can be a volatile memory or a non-volatile memory, or can include both volatile and non-volatile memories. Among them, the non-volatile memory can be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM) or a flash memory. The volatile memory can be a random access memory (RAM), which is used as an external cache. The memory 402 of the apparatus and method described herein is intended to include, but is not limited to, these and any other suitable types of memory.

[0093] In some implementations, the memory 402 stores the following elements, executable modules or data structures, or a subset thereof, or an extended set thereof: an operating system 4021 and an application 4022 .

[0094] The operating system 4021 includes various system programs, such as a framework layer, a core library layer, a driver layer, etc., which are used to implement various basic services and process hardware-based tasks. The application 4022 includes various application programs, such as a browser, etc., which are used to implement various application services. The program for implementing the method of the embodiment of the present application can be included in the application 4022.

[0095] The processor 401 , when calling and executing the application and data stored in the memory 402 , specifically, the program or instruction stored in the application 4022 , executes the high temperature characteristic testing method of the semiconductor device as described in the above embodiment.

[0096] The method disclosed in the above embodiment of the present application can be applied to the processor 401, or implemented by the processor 401. The processor 401 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above method can be completed by the hardware integrated logic circuit or software instructions in the processor 401. The above-mentioned processor 401 can be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a readily available programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, and can implement or execute the disclosed methods, steps and logic block diagrams in the embodiments of the present application. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor, etc. The steps of the method disclosed in the embodiment of the present application can be directly embodied as a hardware decoding processor to execute, or the hardware and software modules in the decoding processor are combined and executed. The software module can be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in the memory 402, and the processor 401 reads the information in the memory 402 and completes the steps of the above method in combination with its hardware.

[0097] It is understood that the embodiments described herein can be implemented in hardware, software, firmware, middleware, microcode or a combination thereof. For hardware implementation, the processing unit can be implemented in one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), general purpose processors, controllers, microcontrollers, microprocessors, other electronic units for performing the functions described in the present application or a combination thereof.

[0098] For software implementation, the techniques described herein can be implemented by modules (e.g., procedures, functions, etc.) that perform the functions described herein. The software code can be stored in a memory and executed by a processor. The memory can be implemented in the processor or outside the processor.

[0099] In addition, an embodiment of the present application further provides a computer-readable storage medium, which stores a computer program. When the computer program is executed by a processor, the processor executes the high-temperature characteristics testing method of a semiconductor device as described in the above embodiment.

[0100] In the several embodiments provided in the present application, it should be understood that the disclosed methods and devices can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0101] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may be physically included separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of hardware plus software functional units.

[0102] The above-mentioned integrated unit implemented in the form of a software functional unit can be stored in a computer-readable storage medium. The above-mentioned software functional unit is stored in a storage medium, including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform some steps of the sending and receiving method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (Read-Only Memory, referred to as ROM), random access memory (Random Access Memory, referred to as RAM), disk or optical disk and other media that can store program codes.

[0103] The above is a preferred embodiment of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles described in the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A method for testing high temperature characteristics of a semiconductor device, characterized in that: The steps include: applying a preheating current to the semiconductor device; Applying a test current and / or a test voltage to the semiconductor device to perform a high temperature characteristic test on the semiconductor device; In response to the test being completed, applying a small signal current to the semiconductor device and acquiring a current junction temperature of the semiconductor device; Based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test end time, predicting the test junction temperature of the semiconductor device at the moment of test end, wherein the test end time is the time interval between the acquisition time of the current junction temperature and the test end time, and the temperature difference prediction coefficient represents the degree of heat diffusion of the semiconductor device; Determining whether this round of testing is valid based on the test junction temperature and the target test temperature; If yes, the test is ended and the test results are generated; If not, the current value of the preheating current is corrected, and the process returns to the step of applying the preheating current to the semiconductor device.

2. The high temperature characteristics testing method of a semiconductor device according to claim 1, characterized in that: The step of determining whether the current round of testing is effective based on the test junction temperature and the target test temperature comprises: Determine whether the difference between the test junction temperature and the target test temperature falls within a preset error range; If yes, it is determined that this round of testing is valid; If not, this round of testing is determined to be invalid.

3. The high temperature characteristics testing method of a semiconductor device according to claim 1, characterized in that: The step of correcting the current value of the preheating current includes: Based on the difference between the test junction temperature and the target test temperature, correcting the current value of the preheating current; When the difference is a positive number, the current value of the preheating current is reduced by a first preset step size; when the difference is a negative number, the current value of the preheating current is increased by a second preset step size.

4. The high temperature characteristics testing method of a semiconductor device according to claim 3, characterized in that: The first preset step size is positively correlated with the numerical value of the difference, and the second preset step size is negatively correlated with the numerical value of the difference.

5. The high temperature characteristics testing method of a semiconductor device according to claim 1, characterized in that: The step of obtaining the current junction temperature of the semiconductor device comprises: Obtaining a K factor of the semiconductor device, wherein the K factor is used to characterize the relationship between the junction temperature of the device and the voltage of the device; collecting voltage across a body diode in the semiconductor device; Based on the K coefficient and the voltage across the body diode, a current junction temperature of the semiconductor device is determined.

6. The high temperature characteristic testing method of a semiconductor device according to claim 1, characterized in that: The step of predicting the test junction temperature of the semiconductor device at the moment of test completion based on the temperature difference prediction coefficient of the semiconductor device, the current junction temperature and the test completion time comprises: Determining the temperature difference prediction coefficient based on a first junction temperature of the semiconductor device at a first moment, a second junction temperature at a second moment, and a time interval between the first moment and the second moment; wherein the small signal current is applied to the semiconductor device at the first moment and the second moment; Determining a junction temperature change value based on the temperature difference prediction coefficient and the test end time; Based on the junction temperature change value and the current junction temperature, a test junction temperature of the semiconductor device at the moment when the test ends is determined.

7. The high temperature characteristic testing method of a semiconductor device according to claim 6, characterized in that: The step of determining the junction temperature change value based on the temperature difference prediction coefficient and the test end time includes: determining the junction temperature change value using the following formula (1): In the above formula (1), ΔT(t1) refers to the junction temperature change value, X refers to the temperature difference prediction coefficient, and t1 refers to the test completion time.

8. The high temperature characteristic testing method of a semiconductor device according to claim 1, characterized in that: The current value of the small signal current is less than or equal to the minimum current value required for the semiconductor device to generate heat.

9. An electronic device, characterized in that: include: processor; and a memory having computer program instructions stored therein, When the computer program instructions are executed by the processor, the processor executes the high temperature characteristic testing method of a semiconductor device according to any one of claims 1 to 8.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the processor executes the high-temperature characteristic testing method of a semiconductor device according to any one of claims 1 to 8.

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