Preparation method and application of MOF-derived high-entropy nitride nanosheet array

By growing MOF-derived high-entropy nitride nanosheet arrays on foam nickel substrates, the problems of low capacitance value and poor cyclic stability in supercapacitors are solved, and high-performance electrode materials are realized, suitable for supercapacitors and Flexible wearable device.

CN119098580APending Publication Date: 2024-12-10ANHUI UNIV
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202411214269.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-08-31
Publication Date
2024-12-10

AI Technical Summary

Technical Problem

The existing MOF derivative materials have low capacitance values, poor cycle stability in supercapacitors, complex preparation processes, and poor performance of traditional electrode materials in flexible wearable devices.

Method used

Using the preparation method of MOF-derived high-entropy nitride nanosheet array, the three-dimensional nanosheet array is grown by room temperature in situ by combining elements such as cobalt, nickel, copper, zinc, manganese, etc., simplifying the preparation process and improving the Electrochemical properties.

Benefits of technology

It realizes a high-entropy nitride electrode without binders and conductive agents, significantly improves cycle stability and rate performance, with an area specific capacitance of 6.4952F/cm² and a retention of up to 93.2%, making it suitable for commercial applications of supercapacitors.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119098580A_ABST
    Figure CN119098580A_ABST
Patent Text Reader

Abstract

The invention provides a preparation method of an MOF-derived high-entropy nitride nanosheet array, and relates to the technical field of energy storage materials, and the preparation method comprises the following steps: S1, dissolving a cobalt source and PVP powder to obtain a pretreatment solution; s2, providing a foamed nickel substrate, cleaning the foamed nickel substrate, and drying the foamed nickel substrate; s3, the foamed nickel substrate is put into the pretreatment solution to be soaked; s4, adding a dimethylimidazole solution to prepare an MOF precursor; s5, a nickel source is provided for preparing Ni-Co-LDH; s6, a copper source, a zinc source and a manganese source are provided, and NiCoCuZnMn-LDH is prepared; and S7, carrying out annealing treatment to prepare the MOF-derived high-entropy nitride nanosheet array. When the MOF-derived high-entropy nitride three-dimensional nanosheet array grown on the foamed nickel substrate prepared by the invention is used as a supercapacitor electrode, a binder and a conductive agent are not needed, the resistance between interfaces is effectively reduced, the utilization rate of active substances is improved, and excellent cycling stability, excellent rate capability and other electrochemical properties are shown.
Need to check novelty before this filing date? Find Prior Art