Silicon plasma shunting disc processing method

By performing plane grinding, positioning hole and feature processing, double-sided LAP grinding and polishing in the processing of silicon plasma shunt disks, the problem that the existing technology is difficult to achieve polishing surfaces below Ra0.05 is solved, and the high accuracy of silicon plasma shunt disks is achieved Processed and low-roughness surfaces meet the needs of 7 nm-level silicon wafers.

CN119098826AActive Publication Date: 2024-12-10ADVANCED QUARTZ MATERIAL (HANGZHOU) CO LTD
View PDF 7 Cites 0 Cited by

Patent Information

Application Number
CN202411174204.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-08-26
Publication Date
2024-12-10
Estimated Expiration
2044-08-26

AI Technical Summary

Technical Problem

The existing silicon plasma split disc processing technology is difficult to achieve a polishing surface roughness below Ra0.05, which cannot meet the extremely refined 7nm-level silicon wafer needs.

Method used

A method including plane grinding, positioning holes and feature processing, double-sided LAP grinding, mixed acid etching and polishing is adopted to ensure that the surface of the silicon plasma split disc and the small hole surface are uniform, by gradually removing the knife marks and mechanical damage layers. Finished to achieve low roughness.

Benefits of technology

It effectively reduces the roughness of the polishing surface of the silicon plasma split disc to reach Ra0.05 or below, meets the demand for extreme fineness, reduces polishing time and improves the finish and reliability of the product.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119098826A_ABST
    Figure CN119098826A_ABST
Patent Text Reader

Abstract

The invention provides a silicon plasma shunting disc processing method, which belongs to the technical field of silicon parts for chip etching, and comprises the following steps: S1, carrying out plane grinding on a silicon plasma shunting disc blank material, so that the thickness of the silicon plasma shunting disc blank material is ground to be 1-2 mm of the final thickness of a product, the parallelism is processed to be 0.09-0.15 mm, and the planeness is processed to be 0.05-0.11 mm; s2, positioning holes, small holes and other features are machined in the silicon plasma shunting disc blank; s3, turning over the blank material of the silicon plasma shunting disc, and processing the reverse side characteristics; s4, double-sided LAP grinding is carried out on the silicon plasma shunt plate blank after feature machining is completed; s5, mixed acid is adopted to etch the ground silicon plasma shunting disc blank material; and S6, a polishing machine is adopted to polish the etched silicon plasma shunting disc blank. According to the method, the characteristics of the silicon plasma shunt disc are firstly processed, then double-sided LAP grinding is carried out, tool marks generated by processing are removed, and finally, after etching and polishing, the roughness of a polished surface is lower than Ra0.05.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Methods for silicon electrode assembly etch rate and etch uniformity recovery

    CN101137461A

  • Regeneration processing method of silicon electrode

    CN114566417A

  • Method for etching wafer chamfer by plasma and plasma etching equipment

    CN116313771A

  • Polishing pad with groove

    JP2000349053A

  • Electrode plate for plasma processor and method for manufacturing the same

    JP2020109804A