Aluminum-copper alloy etching method applied to MEMS manufacturing process
By using a wet etching method combined with a mixture of phosphoric acid, nitric acid and acetic acid in the MEMS manufacturing process, the problem of residual aluminum-copper alloy layer in the non-refrigeration infrared detector is solved, and the product is improved yield and etching effect.
Patent Information
- Application Number
- CN202411225898.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-03
- Publication Date
- 2024-12-10
AI Technical Summary
In the prior art, when the bridge pier of the non-refrigeration infrared detector is formed, the wet etching effect of the aluminum-copper alloy layer is affected by the particle size and surface condition of the metal aluminum-copper layer, resulting in the residue of aluminum-copper alloy and affecting the product yield.
The aluminum-copper alloy layer is sputtered at room temperature to keep the machine temperature at 26℃±5℃, increase the radio frequency power, and activate the surface by pretreatment of argon plasma, and combine the wet etching liquid with a mixture of phosphoric acid, nitric acid and acetic acid. Spin coating lithography and development were performed, followed by uniform stirring etching to reduce the residue of the aluminum-copper alloy layer.
Effectively reduce the particle size of the aluminum-copper alloy layer, improve the corrosion effect of the etching liquid, reduce the residue of aluminum-copper alloy, improve the product yield, ensure the surface finish and cleanliness of the aluminum-copper alloy layer, and enhance the wet etching effect.
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Figure CN119100330A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to an aluminum-copper alloy etching method applied to MEMS manufacturing technology. Background Art
[0002] The semiconductor MEMS (Micro-Electro-Mechanical Systems) manufacturing process is a comprehensive technology that combines semiconductor processing technology and precision machining technology to manufacture miniaturized mechanical and electronic integrated systems. These systems usually include components such as sensors, actuators, and processing units, and are widely used in many fields such as automobiles, consumer electronics, and medical equipment.
[0003] Uncooled infrared detectors are a special type of sensor manufactured based on MEMS manufacturing technology. Infrared detectors are the core components of infrared thermal imagers. Infrared thermal imagers convert changes in the resistance of thermistor materials caused by infrared radiation emitted by the detected object into changes in electrical signals, and convert them into images that can be distinguished by human vision through system calculation. Any object with a temperature greater than absolute zero will emit infrared radiation to the outside world. Infrared radiation can penetrate smoke, dust, rain and snow and other environments, and can be used all day long. Due to the characteristics of good concealment, strong anti-interference, and all-weather operation, infrared thermal imaging technology is widely used in many fields such as medical care, security, military, industry and agriculture, and environmental protection.
[0004] In the manufacturing process of uncooled infrared detectors, the etching process plays a very important role. The requirements of the etching process are relatively detailed and diverse, including achieving high aspect ratios, precise etching angles, and cavity release. To achieve these specific requirements, wet etching is often required.
[0005] The isotropic solution of wet etching acts in all directions to etch a circular cross-section, while the anisotropic solution uses the crystal's orientation to etch trapezoidal, groove and cavity structures. Especially in wet etching of aluminum and copper, the etching angle needs to be greater than 45° to 80°, which places strict requirements on the grain size of metal deposition, because it directly affects the wet etching rate and residual degree, thus having a significant impact on the yield of the device.
[0006] However, in the prior art, when the bridge pier of the uncooled infrared detector is formed, etching is required when making the aluminum-copper alloy layer pattern on the bridge pier structure. In the prior art, the wet etching effect of the aluminum-copper alloy layer is affected by the particle size and surface condition of the metal aluminum-copper layer. In addition, the sputtering temperature of the aluminum-copper alloy layer on the bridge pier structure in the prior art is 270°C, and the particle size of the deposited aluminum-copper alloy layer is relatively large. During wet etching, the aluminum-copper alloy layer cannot be completely removed, resulting in the presence of aluminum-copper alloy residues on the device. The residues of the aluminum-copper alloy layer on the device can be seen in Figure 2 These residual aluminum-copper alloys will cause adhesion of the bridge piers and bridge leg structures, affecting the product yield.
[0007] Therefore, it is necessary to improve the wet etching method of the aluminum-copper alloy layer in the MEMS manufacturing process in the prior art to reduce the residue of the aluminum-copper alloy layer after etching and improve the product yield. Summary of the invention
[0008] The invention provides an aluminum-copper alloy etching method applied to a MEMS manufacturing process. By improving the wet etching process of the aluminum-copper alloy layer, the problem of residual aluminum-copper alloy layer after etching can be solved, thereby improving product yield.
[0009] Other purposes and advantages of the present invention can be further understood from the technical features disclosed in the present invention.
[0010] To achieve one or part or all of the above purposes or other purposes, a technical solution of the present invention provides an aluminum-copper alloy etching method applied to a MEMS manufacturing process, comprising the following steps: step one: sputtering an aluminum-copper alloy layer on a target film on which an aluminum-copper alloy layer is to be deposited on a wafer, wherein the temperature of a machine chamber is maintained at 26°C±5°C and the RF power is greater than 7000W when sputtering the aluminum-copper alloy layer; step two: pretreating the aluminum-copper alloy layer, bombarding the surface of the aluminum-copper alloy layer with argon plasma for 35S-45S; step three: spin coating a photoresist on the aluminum-copper alloy layer, photolithography, and development, and etching the aluminum-copper alloy layer using a wet etching liquid; step four: removing the photoresist remaining on the aluminum-copper alloy layer to obtain a final aluminum-copper alloy layer pattern. The beneficial effect of this technical solution is that the present invention improves the deposition of the aluminum-copper alloy layer, adopts a room-temperature sputtering method, maintains the machine temperature at 26°C±5°C, and increases the radio frequency (RF) power during sputtering, which can effectively reduce the particle size of the sputtered aluminum-copper alloy layer. At the same time, auxiliary argon pretreatment can effectively improve the corrosive effect of the etching liquid, reduce the residue of the aluminum-copper alloy, and improve the yield of the product.
[0011] The target material for the aluminum-copper alloy sputtering in step 1 is an aluminum-copper alloy, and the content of metallic copper in the aluminum-copper alloy is 3.8% to 5%.
[0012] A cooling water circulation pipeline is arranged in the machine, and the cooling water circulation pipeline performs a temperature reduction process on the chamber of the machine.
[0013] In the step 1, the reaction gas for sputtering the aluminum-copper alloy layer is argon gas, and the reaction gas flow rate is 100 SCCM.
[0014] The sputtering time in step 1 is 10S to 15S.
[0015] At least 49 points are selected on the sputtered aluminum-copper alloy layer to test the sheet resistance, and the average film thickness is calculated based on the tested sheet resistance, and the sputtering time of the aluminum-copper alloy layer is adjusted based on the calculated film thickness.
[0016] The wet etching liquid is a mixed solution of phosphoric acid, nitric acid and acetic acid, and the concentration ratio of the mixed solution of phosphoric acid, nitric acid and acetic acid is: 70.1±2:2±1:12.3±1.
[0017] In the step 3, the wafer after the photoresist development on the aluminum-copper alloy layer is placed in a wet etching container, and the pulling device provided in the wet etching container places the products vertically side by side, maintaining an acceleration of 200m / s 2 Movement, pull up and down by 0 to 220 mm during the corrosion time.
[0018] The wet etching time is 85S to 95S;
[0019] After the wet etching is completed, the wet-etched product is placed in a water tank and cleaned for 10 minutes, and then dried and the step 4 is performed.
[0020] The wet etching temperature is 40°C±3°C.
[0021] Compared with the prior art, the beneficial effects of the present invention mainly include: 1. By sputtering the aluminum-copper alloy layer at room temperature, the particle size of the deposited aluminum-copper alloy can be effectively reduced. At the same time, the deposited aluminum-copper alloy layer has high surface smoothness and good cleanliness, and the wet-process liquid can penetrate into the film layer very well.
[0022] 2. Before wet removal of the aluminum-copper alloy layer, the surface of the aluminum-copper alloy layer is pretreated by argon plasma, which can activate the surface of the aluminum-copper alloy layer and improve the chemical reaction activity of the surface. At the same time, part of the oxide layer can be removed, further improving the effect of wet etching.
[0023] 3. Improve the wet etching step, maintain uniform stirring during the etching process, increase the uniformity of the etching solution, accelerate the etching rate, improve the etching effect, and reduce the residue of aluminum-copper alloy after etching.
[0024] In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] In order to more clearly illustrate the technical solutions in the specific embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0026] Figure 1 This is a schematic diagram of the structure of an uncooled infrared detector.
[0027] Figure 2 Schematic diagram of the aluminum-copper alloy layer remaining on the device after wet etching in the prior art.
[0028] Figure 3 A comparison chart of the surface particle sizes of the aluminum-copper alloy layer deposited at room temperature of the present invention and the aluminum-copper alloy layer deposited at high temperature in the prior art.
[0029] Figure 4 This is a flow chart of the method for manufacturing a bridge pier of an uncooled infrared detector according to the present invention.
[0030] Figure 5 A comparison diagram of the adhesion between the bridge legs and the bridge piers of the uncooled infrared detector made by the method of the present invention and the uncooled infrared detector made by the prior art.
[0031] Figure 6 This is a schematic diagram of the wet etching container structure of the present invention.
[0032] In the figure, 1, readout circuit wafer; 2, aluminum-copper alloy layer; 3, polyimide layer; 4, inner groove; 5, lifting arm; 6, outer groove; 7, heating paste; 8, pump; 9, online heater; 10, filter. DETAILED DESCRIPTION
[0033] The above and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as up, down, left, right, front or back, etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and not to limit the present invention.
[0034] Embodiment 1
[0035] Embodiment 1 Taking the aluminum-copper alloy layer deposited on the bridge pier of the uncooled infrared detector as an example, the aluminum-copper alloy etching method applied to the MEMS manufacturing process of the present invention is described.
[0036] See also Figure 1 The uncooled infrared detector is formed on the readout circuit wafer, and a bridge leg, a bridge deck and a bridge pier structure are formed on the readout circuit wafer. The first embodiment takes the aluminum-copper alloy layer 2 deposited on the bridge pier structure as an example for explanation. The bridge pier structure includes a polyimide layer 3 formed on the readout circuit wafer and a silicon nitride support layer (the bridge pier structure is a prior art, and the present invention does not provide a detailed description of the structure). The aluminum-copper alloy layer on the bridge pier structure is formed on the silicon nitride support layer. The aluminum-copper alloy layer plays a very important role in the process as the lead or interconnection line of the integrated circuit. See Figure 4 , Embodiment 1 A method for etching an aluminum-copper alloy layer of a pier structure of an uncooled infrared detector comprises the following steps:
[0037] Step 1: Deposit an aluminum-copper alloy layer on the silicon nitride support layer by a room temperature sputtering method. Embodiment 1 Sputtering adopts a physical vapor deposition method to sputter an aluminum-copper alloy layer, and maintains the reaction chamber temperature of the sputtering machine at 26°C ± 5°C. For the normal temperature maintenance of the reaction machine, use the circulating cooling device of the machine to dissipate heat and cool the machine. The heat dissipation device in the machine is usually in the side wall of the machine. This scheme is a prior art scheme, and the present invention will not be described in detail here. Turn on the RF (radio frequency) power, and maintain the power above 7000W. Bombard the target material with plasma gas. The target material is an aluminum-copper alloy, wherein the copper content is 5%. The reaction gas is argon gas, and the gas flow rate of argon gas is 100SCCM. The sputtering time is 10S. The aluminum-copper alloy is sputtered at room temperature, which can effectively reduce the particle size compared to high temperature deposition.
[0038] The copper content of the aluminum-copper alloy target material here can also be 3.8% to 5%, and the sputtering time is 10S-15S. If the conditions in the above range are met, the sputtered aluminum-copper alloy layer can meet the requirements of the present invention.
[0039] Embodiment 1 The effect of sputtering aluminum-copper alloy at room temperature is described through a performance test of a group of high-temperature sputtering deposition aluminum-copper alloy layers and a group of normal-temperature sputtering deposition aluminum-copper alloy layers. The target material is an aluminum-copper alloy layer with a copper content of 5%, the reaction gas is argon, the argon flow rate is 100 SCCM, the sputtering time is 10S, and the high-temperature sputtering aluminum-copper alloy uses temperatures of 250°C, 260°C, 270°C, 280°C, 290°C and 300°C to deposit aluminum-copper alloy films. The RF power of the machine is 3000W, and the sputtering time at 6 different temperatures is the same. The sheet resistance (average sheet resistance) of the aluminum-copper alloy layer sputtered at 6 different temperatures is measured, and then the film thickness of the aluminum-copper alloy layer sputtered 6 times is calculated (the film thickness is calculated here using the calculation formula of sheet resistance, and the sheet resistance is calculated by the ratio of the material resistivity to the material thickness). By analyzing the aluminum-copper alloy film layers sputtered at different temperatures, it can be found that the deposited particles of the aluminum-copper alloy layer will become larger and uneven as the temperature increases. Table 1 below shows the sheet resistance (RS) test results of the sputtered aluminum-copper alloy layer at 6 different temperatures.
[0040] Table 1 RS test of high temperature sputtered aluminum-copper alloy layer
[0041]
[0042]
[0043] When the aluminum-copper alloy film is sputtered at a high temperature above 250℃, the sheet resistance of the aluminum-copper alloy layer after sputtering will decrease for every 10℃ increase in temperature. Under the same other sputtering conditions, the decrease in sheet resistance indicates the growth of the film layer, and can also indicate that the film layer grows faster as the temperature increases, which can also indicate that the film particles will become larger and uneven as the temperature increases. This is mainly because the higher the temperature, the easier it is for the gas phase reaction to occur, and the oxide film deposition rate will be faster, but the oxide film has larger grains and unclear grain boundaries, which can form a continuous film layer. This increases the difficulty of wet etching, and the etching solution cannot penetrate the film layer through the grain boundaries for etching, which will cause a small amount of residue in the aluminum-copper alloy layer.
[0044] For the sputtering of aluminum-copper alloy at room temperature, the chamber temperature was maintained at 26℃±5℃, and the RF power during sputtering was adjusted. 5000W, 6000W, 7000W, 8000W and 9000W were selected to sputter the aluminum-copper alloy layer. The square resistance of the aluminum-copper alloy layer under different RF powers was measured. The final measurement results are shown in Table 2 below.
[0045] Table 2 RS test of room temperature sputtering aluminum-copper alloy layer
[0046]
[0047]
[0048] The film uniformity test in Table 2 is to select multiple points on the aluminum-copper alloy layer deposited at any power, test the square resistance (obtained by the four-terminal method) to obtain the film thickness of each point, and the film uniformity is calculated as: the ratio of the maximum film thickness minus the minimum film thickness to the average film thickness. As can be seen from Table 2, when the power increases, the thickness of the aluminum-copper alloy layer will increase, but the uniformity of the aluminum-copper alloy layer remains basically unchanged. The aluminum-copper alloy layer grows evenly and will not grow too fast. The particle size of the aluminum-copper alloy layer is smaller than that of high-temperature deposition. At the same time, the aluminum-copper alloy layer boundary scatters more light than high temperature, and the reflectivity will be lower than that of the aluminum-copper alloy layer deposited at high temperature.
[0049] The aluminum-copper alloy layer is deposited at room temperature. The aluminum-copper alloy metal film layer has a slow deposition speed, low reaction ability, and is prone to chemical reactions, which makes the deposited aluminum-copper alloy layer have a high surface finish, generates a dense metal film layer with good crystallinity and a clear interface, and the etching liquid can penetrate into the aluminum-copper alloy layer well, thereby improving the removal ability of wet etching.
[0050] At the same time, the surface morphology of the aluminum-copper alloy layer deposited at high temperature and the aluminum-copper alloy layer deposited at room temperature were tested. Figure 3 ,in Figure 3 Figure 3-1 shows the surface appearance of the aluminum-copper alloy layer deposited at high temperature. Figure 3 Figure 3-2 shows the surface appearance of the aluminum-copper alloy layer deposited at room temperature. The surface of the aluminum-copper alloy layer deposited at room temperature is smoother and has a smaller particle size.
[0051] After the aluminum-copper alloy layer is sputtered, at least 49 points are randomly selected on the sputtered aluminum-copper alloy layer to test the sheet resistance, and the average film thickness is calculated based on the sheet resistance at the test point (the film thickness is calculated here using the sheet resistance calculation formula, and the sheet resistance is calculated from the ratio of the material resistivity to the material thickness), and the sputtering time is adjusted based on the calculated film thickness.
[0052] Step 2: Pre-treat the aluminum-copper alloy layer. Use argon plasma to bombard the surface of the aluminum-copper alloy layer for 35S-45S. Argon, as an inert gas, is often used in semiconductor etching processes. Under high-energy ion bombardment, anode ions and electrons are formed. The ions and electrons collide with each other to etch the surface. After argon plasma pre-treatment, the oxide layer and organic pollutants on the surface of the aluminum-copper alloy layer will be partially removed, allowing the etching to invade the surface of the aluminum-copper alloy layer, reducing the residue of the aluminum-copper alloy layer on the device;
[0053] Step 3: Spin-coat the photoresist on the aluminum-copper alloy layer and perform photolithography, and develop the photolithography area, and use a wet etching liquid to etch the aluminum-copper alloy layer, and remove the aluminum-copper alloy layer in the developed area (without photoresist). The wet etching liquid used in this embodiment is an aluminum etching liquid, which is a mixture of phosphoric acid, nitric acid and acetic acid, HNO 3 Al ionization due to HNO 3 Oxidizing, generating Al 2 O 3 ;H 3 PO 4 With Al 2 O 3 It reacts to dissolve and plays a major role in etching; CH 3 COOH increases the wettability of the solution and promotes the reaction; it can reduce the Al and HNO 3 The H generated by the reaction 2 Adsorption to wafers. According to the characteristics of the mixed liquid, different ratios and concentrations of the liquid have different etching rates. According to the lateral corrosion requirements and thickness of the product, after experiments, a mixed liquid with high corrosion rate and good uniformity was selected. The following takes two groups of etching liquid ratios as an example to illustrate the etching liquid ratio concentration by testing the corrosion results under different conditions.
[0054]
[0055] From the above experimental results, the etching effect (etching rate per minute) of liquid B (phosphoric acid, nitric acid and acetic acid concentration ratio of 70.1:2:12.3) is significantly better than that of liquid A (phosphoric acid, nitric acid and acetic acid concentration ratio of 58:6.5:12). Therefore, in order to ensure the efficiency of etching, Example 1 selects phosphoric acid, nitric acid and acetic acid concentration ratio of 70±2:2±1:12.3±1, and corrodes the aluminum-copper alloy layer at room temperature. The room temperature corrosion here is to place the product in a wet etching container for etching at a temperature of 40°C±3°C.
[0056] In order to ensure the etching effect, a stirring device is provided in the wet etching container, see Figure 6 The wet etching container includes an inner tank 4 and an outer tank 6. The outer tank 6 adds etching liquid to the inner tank 4 through a pipeline, wherein the pipeline is provided with a pump 8, an online heating device 9 and a filter 10 in sequence. A heating paste 7 is provided in the inner tank 4 to maintain the wet etching environment temperature at 40°C ± 3°C. The lifting device provided in the inner tank 4 includes an L-shaped lifting arm 5. During the wafer wet etching process, multiple wafers are placed vertically side by side on the lifting arm to maintain 200m / S 2The lifting arm 5 drives the wafer to move up and down in the corrosive liquid with an acceleration of 0-220 mm. The bubbles generated during wet etching can be eliminated with the lifting, so that the surface etching is uniform and the etching is fast. The wet etching liquid can evenly etch the aluminum-copper alloy layer on the wafer. The wet etching time is 85 seconds. After wet etching, the wafer is placed in a water tank for 10 minutes and dried. The etched wafer leaves an undeveloped bridge pier area.
[0057] Among them, during wet etching, the wet etching time can also be 85S-95S. After wet etching, the wafer is placed in a water tank and rinsed for at least 8 minutes and then dried. Meeting the conditions in the above range can effectively improve the residual aluminum-copper alloy layer on the wafer.
[0058] Step 4: remove the photoresist remaining in the undeveloped bridge pier area on the aluminum-copper alloy layer to obtain the final aluminum-copper alloy layer pattern.
[0059] Example 1 The surface of the wafer on which the aluminum-copper alloy layer was deposited at room temperature and the surface of the wafer on which the aluminum-copper alloy layer was deposited at high temperature were respectively inspected by CD SEM (Critical Dimension Scanning Electron Microscopy), see Figure 5 , Figure 5 Figure 5-1 is the surface of a wafer with a high-temperature deposited aluminum-copper alloy layer. It can be seen that there is an adhesion problem between the bridge leg area and the bridge pier area. Figure 5 5-2 in the figure is the surface of the wafer on which the aluminum-copper alloy layer is deposited at room temperature. Figure 5 The surface of the wafer with the high temperature deposited aluminum-copper alloy layer in 5-1, and the room temperature deposited aluminum-copper alloy can effectively improve the adhesion between the bridge leg area and the bridge pier area ( Figure 5 5-1 and Figure 5 The red circle area of 5-2 in the figure) can improve the yield of the product.
[0060] The above is a detailed introduction to an aluminum-copper alloy etching method for MEMS manufacturing process provided by the present invention. This article uses specific examples to illustrate the structure and working principle of the present invention. The description of the above embodiments is only used to help understand the method and core idea of the present invention. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the present invention, the present invention can also be improved and modified, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.
Claims
1. A method for etching aluminum-copper alloy used in MEMS manufacturing process. It is characterized in that The steps include: Step 1: Sputtering an aluminum-copper alloy layer on a target film on which an aluminum-copper alloy layer is to be deposited on a wafer. When sputtering the aluminum-copper alloy layer, the chamber temperature of the machine is maintained at 26°C ± 5°C, and the RF power is greater than 7000W; Step 2: Pre-treat the aluminum-copper alloy layer, bombard the surface of the aluminum-copper alloy layer with argon plasma for 35S-45S Step 3: Spin-coat a photoresist on the aluminum-copper alloy layer, perform photolithography, and develop the layer, and etch the aluminum-copper alloy layer using a wet etching liquid; Step 4: Remove the photoresist remaining on the aluminum-copper alloy layer to obtain the final aluminum-copper alloy layer pattern.
2. The aluminum-copper alloy etching method for MEMS manufacturing process according to claim 1, It is characterized in that The target material for the aluminum-copper alloy sputtering in step 1 is an aluminum-copper alloy, and the content of metallic copper in the aluminum-copper alloy is 3.8%-5%.
3. The aluminum-copper alloy etching method for MEMS manufacturing process according to claim 1, It is characterized in that A cooling water circulation pipeline is arranged in the machine, and the cooling water circulation pipeline performs a temperature reduction process on the chamber of the machine.
4. The aluminum-copper alloy etching method for MEMS manufacturing process according to claim 1, It is characterized in that In the step 1, the reaction gas for sputtering the aluminum-copper alloy layer is argon gas, and the reaction gas flow rate is 100 SCCM .
5. The aluminum-copper alloy etching method for MEMS manufacturing process according to claim 1, Features: The sputtering time in step 1 is 10S to 15S.
6. The aluminum-copper alloy etching method used in MEMS manufacturing process according to claim 5, Features: At least 49 points are selected on the sputtered aluminum-copper alloy layer to test the sheet resistance, and the average film thickness is calculated based on the tested sheet resistance, and the sputtering time of the aluminum-copper alloy layer is adjusted based on the calculated film thickness.
7. The aluminum-copper alloy etching method for MEMS manufacturing process according to claim 5, Features: The wet etching liquid is a mixed solution of phosphoric acid, nitric acid and acetic acid, and the concentration ratio of the mixed solution of phosphoric acid, nitric acid and acetic acid is: 70.1±2:2±1:12.3±1.
8. The aluminum-copper alloy etching method for MEMS manufacturing process according to claim 7, Features: In the step 3, the wafer after the photoresist development on the aluminum-copper alloy layer is placed in a wet etching container, and the pulling device provided in the wet etching container places the products vertically side by side, maintaining an acceleration of 200m / s 2 Movement, pull up and down by 0 to 220 mm during the corrosion time.
9. The aluminum-copper alloy etching method for MEMS manufacturing process according to claim 7, Features: The wet etching time is 85S to 95S; After the wet etching is completed, the wet-etched product is placed in a water tank and cleaned for 10 minutes, and then dried and the step 4 is performed.
10. The aluminum-copper alloy etching method used in MEMS manufacturing process according to claim 7, Features: The wet etching temperature is 40°C±3°C.