Plasma source and plasma apparatus

Abstract

The invention provides a plasma source and a plasma apparatus. The plasma source comprises an upper cover, an insulating shell, an insulating medium cylinder, a capacitor electrode plate and an inductance coil. The upper cover is fixed on the insulating shell in a sealing manner and is provided with an air inlet channel; the insulating shell is provided with a hollow cavity; the insulating medium cylinder occupies the position, close to the upper cover, of the hollow cavity, so that the part, away from the upper cover, of the hollow cavity is an integral cavity part, the insulating medium cylinder is provided with a plurality of through holes, and the through holes are communicated with the air inlet channel and the integral cavity part; the capacitor electrode plate is arranged on the insulating medium cylinder to form capacitors at the through holes, the capacitors are used for enabling process gas entering through the gas inlet channel to generate capacitance coupling plasma in the capacitors formed at the through holes, and the capacitance coupling plasma is discharged to the whole cavity part; the inductance coil corresponds to the integral cavity part and is used for inductively coupling the capacitively coupled plasma discharged into the integral cavity part. The plasma equipment comprises a process cavity and the plurality of plasma sources.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductors, and more particularly to a plasma source and a plasma device. Background Art

[0002] The plasma sources used in the process chamber (PC) of existing semiconductor plasma equipment are mainly divided into two categories: capacitively coupled plasma and inductively coupled plasma.

[0003] Capacitively coupled plasma (CCP) is one of the most common types of industrial plasma sources. Figure 1 As shown, it essentially consists of two electrodes (i.e. Figure 1 The upper electrode and the lower electrode (for example, made of metal material) are placed in the reaction chamber. The gas pressure in the reaction chamber can be lower than the atmospheric pressure or can be the atmospheric pressure. The two electrodes are driven by a radio frequency power supply to ionize the electronic special gas (collectively referred to as the process gas) and generate plasma (usually referred to as "ignition" or "starting"). The advantage of CCP is that the ignition requirements such as the gas pressure in the chamber and the electronic special gas and other reaction chamber conditions are relatively loose. The disadvantage is that the density / intensity of the generated plasma is not large.

[0004] Inductively coupled plasma (ICP), also known as transformer coupled plasma (TCP), is a plasma source such as Figure 2 As shown, the particle energy is provided by the electromagnetic field generated by the RF current passing through the coil. The advantage of ICP is that the plasma density / intensity produced is greater than that of CCP. The disadvantage is that the ignition requirements, such as the reaction chamber conditions such as the chamber pressure and electronic special gas, are more stringent than those of CCP, and ignition is more difficult than that of CCP.

[0005] The mutual constraints between the above-mentioned ignition conditions and plasma density of the CCP plasma source and the ICP plasma source will cause unstable plasma quality in the process chamber, and then cause uneven process (such as etching / thin film deposition) results on the wafer surface, greatly affecting the chip yield and increasing costs. Therefore, it is necessary to further improve the plasma source. Summary of the invention

[0006] In view of the problems existing in the background technology, an object of the present disclosure is to provide a plasma source and a plasma device, which can ensure that the quality of the plasma supplied to the process chamber is reliable and stable during the process operation.

[0007] Therefore, a plasma source is provided, which includes an upper cover, an insulating shell, an insulating medium column, a capacitor electrode sheet, and an inductor coil. The upper cover is sealed and fixed on the insulating shell, and the upper cover has an axially through-going air inlet, which is used to introduce process gas; the insulating shell has a hollow cavity; the insulating dielectric column occupies the position of the hollow cavity of the insulating shell close to the upper cover so that the part of the hollow cavity of the insulating shell located away from the upper cover of the insulating dielectric column is an empty and unoccupied overall cavity, and the insulating dielectric column has a plurality of axially through-going through holes spaced from each other in radial and circumferential directions, and each through hole is connected to the air inlet and the overall cavity; the capacitor electrode sheet is arranged on the insulating dielectric column so that the capacitor electrode sheet and the insulating dielectric column form a capacitor at each through hole, and the capacitor is used to make the process gas entering through the air inlet generate capacitive coupling plasma in the capacitor formed at each through hole, and the capacitive coupling plasma is discharged to the overall cavity; the inductor coil is wound on the outside of the insulating shell and corresponds to the overall cavity of the hollow cavity of the insulating shell in position, and the inductor coil is used to make the capacitive coupling plasma discharged from the plurality of through holes into the overall cavity perform inductive coupling.

[0008] A plasma device is provided, comprising a process chamber and the aforementioned multiple plasma sources, wherein the multiple plasma sources are arranged on the same outer surface of the process chamber at intervals and the overall cavity of each plasma source is connected to the inner space of the process chamber; the process chamber is used to receive plasma supplied into the process chamber by the multiple plasma sources to perform a plasma treatment process.

[0009] The beneficial effects of the present disclosure are as follows.

[0010] In the plasma source disclosed in the present invention, the process gas introduced through the air inlet of the upper cover first forms capacitive coupling in each of the multiple through holes of the insulating dielectric column to form a small amount of capacitively coupled plasma. The loose ignition / starting conditions of the capacitive coupling (i.e., the ignition gas pressure range is large, i.e., the ignition gas pressure requirement is low) are utilized to easily, reliably and stably complete the ignition / starting. The capacitively coupled plasmas formed in each of the multiple through holes pass through their respective through holes and enter the overall cavity to form inductive coupling by the action of the inductive coil. This makes the capacitively coupled plasma entering the overall cavity enhance in plasma density after inductive coupling due to the full play of the advantage of inductive coupling in plasma density. Therefore, the process gas fully exerts the advantages of capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) from easy, reliable and stable ignition / starting to enhanced plasma density, so that the quality of the plasma supplied to the process cavity described later is reliable and stable during the process operation, and the uniformity of the wafer surface is improved in, for example, etching / thin film deposition processes, which can improve the yield of the manufactured chips and reduce costs. Therefore, the plasma source of the present disclosure may also be referred to as a hybrid remote plasma source.

[0011] With background technology Figure 1 Compared with the capacitor composed only of the upper electrode and the lower electrode in the reaction chamber, in the plasma source of the present disclosure, since capacitors are formed at multiple through holes, ignition / starting can be fully ensured, thereby improving the stability of operation. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram of the principle of a separate capacitively coupled plasma reaction chamber.

[0013] Figure 2 It is a schematic diagram of the principle of a separate inductively coupled plasma reaction chamber.

[0014] Figure 3 is a perspective view of a plasma source according to the present disclosure.

[0015] Figure 4 yes Figure 3 A partially exploded view of a first embodiment of a plasma source.

[0016] Figure 5 yes Figure 4 A further breakdown of the diagram.

[0017] Figure 6 yes Figure 4 A three-dimensional view of an insulating housing of a plasma source, wherein a lower insulating sheet located in the insulating housing is shown.

[0018] Figure 7 yes Figure 5 Assembly diagram of the insulating dielectric column and capacitor electrode sheet.

[0019] Figure 8 yes Figure 7 Exploded view of the insulating dielectric column and capacitor electrode sheet in FIG.

[0020] Fig. 9 yes Figure 3 A perspective cutaway view of a first embodiment of a plasma source.

[0021] Fig.10 yes Figure 3 A partially exploded view of a second embodiment of a plasma source.

[0022] Fig.11 yes Fig.10 A further breakdown of the diagram.

[0023] Fig.12 yes Fig.11 Exploded view of the insulating dielectric column and capacitor electrode sheet in FIG.

[0024] Fig.13 yes Fig.10A perspective view of the insulating housing of a plasma source.

[0025] Fig.14 yes Figure 3 A perspective cutaway view of a second embodiment of a plasma source.

[0026] Fig.15 yes Figure 3 Schematic diagram of electrical connection between the RF power supply and the first lead of the capacitor electrode sheet, the first electrode sheet, the second lead, the second electrode sheet and the inductor coil in the first embodiment and the second embodiment of the plasma source.

[0027] Fig.16 is a perspective view of a plasma apparatus according to the present disclosure.

[0028] Fig.17 yes Fig.16 A three-dimensional cutaway diagram of .

[0029] The reference numerals are described as follows:

[0030] 1000 plasma equipment 42 second electrode sheet

[0031] 100 plasma source 421 second perforation

[0032] D axial 43 first lead

[0033] 1 Upper cover 44 Second lead

[0034] 11 Intake duct 5 inductor coil

[0035] 2 Insulation shell 6 Insulation sheet

[0036] 21 hollow cavity 61 upper via

[0037] 211 overall cavity 7 lower insulation sheet

[0038] 22 mounting flange 71 lower through hole

[0039] 3 insulating medium column 8 inductor coil frame

[0040] 31 through holes 9 RF power supply

[0041] 4 capacitor electrode sheet 200 process chamber

[0042] 41 Space inside the first electrode sheet 200a

[0043] 411 first perforation 300 shielding cover

[0044] 2000 Etching / Coating / Cleaning Objects DETAILED DESCRIPTION

[0045] The accompanying drawings show embodiments of the present disclosure, and it will be understood that the disclosed embodiments are merely examples of the present disclosure, and the present disclosure can be implemented in various forms. Therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as the basis for the claims and as a representative basis for teaching ordinary technicians in the field to implement the present disclosure in various ways.

[0046] [Plasma source]

[0047] Reference Figures 3 to 15 The plasma source 100 includes an upper cover 1, an insulating shell 2, an insulating medium column 3, a capacitor electrode sheet 4, and an inductor coil 5.

[0048] The upper cover 1 is sealed and fixed on the insulating shell 2. The upper cover 1 has an air inlet 11 that penetrates in the axial direction D. The air inlet 11 is used to introduce process gas. The insulating shell 2 has a hollow cavity 21. The insulating dielectric column 3 occupies the position of the hollow cavity 21 of the insulating shell 2 close to the upper cover 1 so that the part of the hollow cavity 21 of the insulating shell 2 located away from the upper cover 1 of the insulating dielectric column 3 is an empty and unoccupied overall cavity 211. The insulating dielectric column 3 has a plurality of through holes 31 that penetrate in the axial direction D and are spaced apart from each other in the radial and circumferential directions. Each through hole 31 is connected to the air inlet 11 and the overall cavity 211. The capacitor electrode sheet 4 is arranged on the insulating dielectric column 3 so that the capacitor electrode sheet 4 and the insulating dielectric column 3 form a capacitor at each through hole 31 together. The capacitor is used to generate a capacitively coupled plasma in the capacitor formed at each through hole 31 by the process gas entering through the air inlet 11, and the capacitively coupled plasma is discharged to the overall cavity 211. The inductor 5 is wound around the outside of the insulating shell 2 and corresponds in position to the overall cavity 211 of the hollow cavity 21 of the insulating shell 2 . The inductor 5 is used to inductively couple the capacitively coupled plasma discharged from the plurality of through holes 31 into the overall cavity 211 .

[0049] In the plasma source 100 of the present disclosure, the process gas introduced through the air inlet 11 of the upper cover 1 first forms capacitive coupling in each of the multiple through holes 31 of the insulating medium column 3 to form a small amount of capacitive coupling plasma. By utilizing the loose ignition / starting conditions of capacitive coupling (i.e., a large ignition gas pressure range, i.e., a low ignition gas pressure requirement), the ignition / starting is easily, reliably and stably completed. The capacitive coupling plasmas formed in each of the multiple through holes 31 pass through their respective through holes 31 and enter the overall cavity 211 to form inductive coupling by the action of the inductor 5, which makes the gas entering the overall cavity 211 After inductive coupling, the capacitively coupled plasma is enhanced in plasma density because the advantage of inductive coupling in plasma density is fully utilized. Therefore, the process gas is easily, reliably and stably ignited / started to enhance the plasma density, which fully utilizes the advantages of capacitively coupled plasma (CCP) and inductively coupled plasma (ICP), so that the quality of the plasma supplied to the process chamber 200 described later is reliable and stable during the process operation, and the uniformity of the wafer surface is improved in the etching / thin film deposition process, which can improve the yield of the manufactured chips and reduce the cost. Therefore, the plasma source 100 of the present disclosure can also be called a hybrid remote plasma source (Hybrid Remote Plasma Source, Hybrid RPS).

[0050] With background technology Figure 1 Compared with the capacitor composed of only the upper electrode and the lower electrode in the reaction chamber, in the plasma source 100 of the present disclosure, since capacitors are formed at multiple through holes 31, ignition / starting can be fully ensured, thereby improving the stability of operation.

[0051] Note that the process gas may be appropriately determined based on the process employed, such as etching, thin film deposition, process chamber cleaning, or thin film cleaning (for a carrier such as an electrostatic chuck).

[0052] like Figures 3 to 5 and Fig. 9 as well as Figure 10 to Figure 11 and Fig.14 As shown, in one example, the upper cover 1 is in an inverted funnel shape, so that the process gas can evenly enter each through hole 31. The upper cover 1 is, for example but not limited to, stainless steel, ceramic or quartz.

[0053] like Figures 3 to 6 and Fig. 9 as well as Figure 10 to Figure 11 , Fig.13 and Fig.14 As shown, in one example, the insulating housing 2 is a cylinder with mounting flanges 22 at both ends of the axial direction D. Similarly, the insulating housing 2 is made of, for example but not limited to, ceramic.

[0054] The material of the insulating dielectric column 3 can be an inorganic dielectric, and the inorganic dielectric is selected from ceramic, quartz, or glass.

[0055] exist Figures 4 to 9 (and combined with Figure 3 ) in a first embodiment of a plasma source 100, the capacitor electrode sheet 4 includes a cylindrical first electrode sheet 41 and a cylindrical second electrode sheet 42 which are alternately arranged with each other in the radial direction and separated by an insulating medium column 3; a plurality of through holes 31 are arranged in a plurality of concentric circles, and the through holes 31 on each circle are radially located between a corresponding pair of adjacent cylindrical first electrode sheets 41 and second electrode sheets 42 so that the first electrode sheets 41 and the second electrode sheets 42 and the insulating medium column 3 form a tubular capacitor at each through hole 31.

[0056] like Fig. 9 As shown, in one example, the size of the first electrode sheet 41 and the second electrode sheet 42 along the axial direction D is the same as the size of the insulating medium column 3 along the axial direction D, thereby making the first electrode sheet 41 and the second electrode sheet 42 and the insulating medium column 3 in the axial direction D form a tubular capacitor at each through hole 31 with the same size, thereby improving the consistency of the capacitors formed at the multiple through holes 31. For example, the insulating medium column 3 can be sintered, so that the first electrode sheet 41 and the second electrode sheet 42 are buried in the insulating medium column 3.

[0057] like Figure 8 As shown, in one example, first electrode sheets 41 of the same polarity are electrically connected together by a first lead 43, and second electrode sheets 42 of the same polarity are electrically connected together by a second lead 44. Figure 8 In the figure, the first lead 43 extends radially outward from the innermost first electrode sheet 41, and the second lead 44 extends radially outward from the innermost second electrode sheet 42. The radial outward extension direction of the first lead 43 is opposite to the radial outward extension direction of the second lead 44. When the first lead 43 extends radially outward through the second electrode sheet 42, the second electrode sheet 44 is preferably disconnected as a whole along the axial direction D to avoid the first lead 43. Similarly, when the second lead 44 extends radially outward through the first electrode sheet 41, the first electrode sheet 41 is preferably disconnected as a whole along the axial direction D to avoid the second lead 44. Because the overall disconnection of the first electrode sheet 41 along the axial direction D can ensure the consistency of the size of the capacitor formed in the axial direction D, similarly, because the overall disconnection of the second electrode sheet 42 along the axial direction D can ensure the consistency of the size of the capacitor formed in the axial direction D. In addition, the volume is reduced compared to the electrical connection from the end of the axial direction D that is away from the overall cavity 211, which is conducive to the miniaturization of the plasma source 100. Correspondingly, as shown in FIG8 , the plurality of through holes 31 are arranged in multiple concentric circles, and at the disconnection point between the first electrode sheet 41 and the second electrode sheet 42 , the through holes 31 of each circle are separated into two parts, but the parts can be arranged at equal intervals.

[0058] exist Figures 10 to 14 (and combined with Figure 3 ), the capacitor electrode sheet 4 includes a first plate-shaped electrode sheet 41 and a second plate-shaped electrode sheet 42 which are alternately stacked along the axial direction D and separated by the insulating medium column 3, each first electrode sheet 41 has a plurality of first through-holes 411 which are consistent with the positions of the plurality of through-holes 31, and each second electrode sheet 42 has a plurality of second through-holes 421 which are consistent with the positions of the plurality of through-holes 31. The first plate-shaped electrode sheets 41 and the second plate-shaped electrode sheets 42 which are alternately stacked and separated along the axial direction D and the insulating medium column 3 which are located between the adjacent first electrode sheets 41 and the second electrode sheets 42 along the axial direction D form a stacked capacitor, thereby forming a stacked capacitor at each through-hole 31 with the first electrode sheets 41 and the second electrode sheets 42 and the insulating medium column 3.

[0059] Similarly, the insulating medium column 3 can be sintered, and the first electrode sheet 41 and the second electrode sheet 42 are embedded in the insulating medium column 3 .

[0060] like Fig.12 As shown, in one example, the plurality of through holes 31 are arranged in a plurality of concentric circles. Further, the through holes 31 in each circle may be arranged at equal intervals.

[0061] Similarly, the first electrode sheets 41 of the same polarity are electrically connected together by the first lead 43, and the second electrode sheets 42 of the same polarity are electrically connected together by the second lead 44. Since the flat-plate-shaped first electrode sheets 41 and the flat-plate-shaped second electrode sheets 42 are alternately stacked with each other along the axial direction D and separated by the insulating medium column 3, the first electrode sheets 41 of the same polarity can be electrically connected together by the first lead 43 on the same side of the radial direction, and the second electrode sheets 42 of the same polarity can be electrically connected together by the second lead 44 on the same side of the radial direction. Similarly, the first lead 43 and the second lead 44 extend in opposite directions in the radial direction. The first electrode sheet 41, the second electrode sheet 42, and the first lead 43 and the second lead 44 are made of, for example, copper, silver, or copper plated with silver.

[0062] like Figure 3 , Figures 4 to 5 , Figure 10 to Figure 11 As shown, the inductor 5 is in a spirally wound form. The inductor 5 is, for example but not limited to, a copper coil or a copper coil plated with silver.

[0063] like Figure 4 and Fig.10 , Fig.14 as well as Fig.15As shown, the first lead 43 and the second lead 44 of the capacitor electrode sheet 4 and the inductor 5 are connected in series, thereby allowing the capacitive coupling and the inductive coupling to act simultaneously under the same circuit drive, avoiding the complexity of control caused by the separate circuits of the capacitive coupling and the inductive coupling. In addition, it also avoids the situation where one of the capacitive coupling and the inductive coupling fails due to the separate setting, thereby forming a separate capacitively coupled plasma or a separate inductively coupled plasma of the background technology. That is, in the plasma source 100 of the present disclosure, the capacitive coupling and the inductive coupling act simultaneously. If the plasma source 100 does not work, it means that the capacitive coupling and the inductive coupling are not working, and any subsequent process operation cannot be performed, leaving it to the operator to check and eliminate the fault.

[0064] against Figures 4 to 9 (and combined with Figure 3 ) of the first embodiment of the plasma source 100, such as Figure 4 , Figure 5 and Fig. 9 As shown, in one example, the plasma source 100 further includes an upper insulating sheet 6, which is covered on one end of the insulating medium column 3 in the axial direction D and adjacent to the upper cover 1; the upper insulating sheet 6 has an upper through hole 61 that passes through and corresponds to the plurality of through holes 31. By setting the upper insulating sheet 6, the process gas entering through the air inlet 11 and the end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3 are covered, thereby isolating the process gas and the end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3. Similarly, as Figure 6 and Fig. 9As shown, in one example, the plasma source 100 further includes a lower insulating sheet 7, which is supported at the other end of the insulating medium column 3 in the axial direction D away from the upper cover 1; the lower insulating sheet 7 has a through lower through hole 71 corresponding to the plurality of through holes 31. By setting the lower insulating sheet 7, the plasma in the overall cavity 211 and the other end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3 are covered, so that the process gas and the other end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D of the insulating medium column 3 are separated, so as to avoid the other end of the capacitor electrode sheet 4 (specifically the first electrode sheet 41 and the second electrode sheet 42) exposed in the axial direction D The dielectric column 3 affects the plasma in the overall cavity 211. For example, the upper insulating sheet 6 and the lower insulating sheet 7 are made of the same material as the insulating medium column 3. In one example, the insulating shell 2, the insulating medium column 3, the capacitor electrode sheet 4, the upper insulating sheet 6 and the lower insulating sheet 7 are integrally formed, thereby achieving the fixation of the insulating medium column 3, the capacitor electrode sheet 4, the upper insulating sheet 6 and the lower insulating sheet 7 in the insulating shell 2 and the sealing between the insulating medium column 3, the upper insulating sheet 6 and the lower insulating sheet 7 and the insulating shell 2.

[0065] In targeting Figures 10 to 14 (and combined with Figure 3 ), similarly, in order to separate the process gas entering through the inlet 11 from the capacitor electrode sheet 4 (specifically, the first electrode sheet 41 or the second electrode sheet 42 stacked along the axial direction D and closest to the inlet 11) and to separate the plasma in the overall cavity 211 from the capacitor electrode sheet 4 (specifically, the first electrode sheet 41 or the second electrode sheet 42 stacked along the axial direction D and closest to the overall cavity 211), the insulating medium column 3 covers the capacitor electrode sheet 4 at both ends of the axial direction D, as shown in FIG. Fig.10 , Fig.11 , Fig.12 and Fig.14 In one example, the insulating housing 2, the insulating medium column 3, and the capacitor electrode sheet 4 are integrally formed, thereby achieving the fixation of the insulating medium column 3 and the capacitor electrode sheet 4 in the insulating housing 2 and the sealing between the insulating medium column 3 and the insulating housing 2.

[0066] like Figure 3 , Figure 4 , Figure 5 , Fig. 9 as well as Fig.10 , Fig.11 , Fig.14As shown, in one example, the plasma source 100 further includes an inductor frame 8; the inductor frame 8 is sleeved outside the insulating housing 2 and covers at least a portion of the insulating medium column 3 and the entire cavity 211 along the axial direction D, and the inductor frame 8 is used to fix and support the inductor 5. The material of the inductor frame 8 can be Teflon.

[0067] like Fig.15 As shown, the plasma source 100 further includes a radio frequency power supply 9, which is connected in series with the first lead 43 and the second lead 44 of the capacitor electrode sheet 4 and the inductor 5, and both ends of the radio frequency power supply 9 are grounded. Fig.15 In the example shown, there is one radio frequency power source 9. In an example not shown, there are two radio frequency power sources 9, which are respectively located on opposite sides of the capacitor electrode sheet 4 and the inductor coil 5 connected in series.

[0068] [Plasma equipment]

[0069] Reference Fig.16 and Fig.17 The plasma device 1000 according to the present disclosure includes a process chamber 200 and the aforementioned multiple plasma sources 100. The multiple plasma sources 100 are arranged on the same outer surface of the process chamber 200 at intervals, and the overall chamber 211 of each plasma source 100 is connected to the inner space 200a of the process chamber 200. The process chamber 200 is used to receive plasma supplied into the process chamber 200 by the multiple plasma sources 100 to perform a plasma treatment process.

[0070] The various features, effects, and operations of the plasma source 100 can be found in the foregoing description and will not be described again herein.

[0071] In the plasma device 1000 according to the present disclosure, by setting up multiple plasma sources 100, the plasma flow that can only be generated by the current large plasma source in the industry is divided into a plasma flow generated by multiple small plasma sources 100. The multiple small plasma sources 100 can control the plasma flow of each individual separately, thereby controlling the uniformity of etching or deposition coating, and improving the overall yield of chip manufacturing. In addition, if any small plasma source 100 is damaged, it can be very convenient to disassemble and replace, without the need to disassemble all plasma sources 100 on the entire process chamber 200 for maintenance, reducing the impact on the process environment. In addition, the power of the RF power supply 9 required by a single small plasma source 100 is relatively small, which can avoid the technical barrier risks and cost increases caused by the use of high-power RF power supplies.

[0072] Specifically, the plasma treatment process includes etching, thin film deposition, process chamber cleaning or thin film cleaning (for example, cleaning of deposited thin films on the surface of carriers). Fig.17 An etching / plating / cleaning object 2000 is schematically shown.

[0073] exist Fig.16 and Fig.17 In the embodiment, the plurality of plasma sources 100 are arranged with one plasma source 100 arranged in the center and four plasma sources 100 arranged at equal intervals radially and axially around the central plasma source 100. In an alternative example, the plurality of plasma sources 100 are arranged in an array, and the specific arrangement can be flexibly set as long as uniform distribution is achieved (and thus, for example, the uniformity of etching or deposition coating of each area on the surface of the semiconductor wafer is satisfied).

[0074] In one example, the same outer surface is a top surface.

[0075] like Fig.16 and Fig.17 As shown, in one example, the plasma equipment 1000 further includes a shielding cover 300 ; the shielding cover 300 surrounds the plurality of plasma sources 100 and separates the plurality of plasma sources 100 from each other.

[0076] The above detailed description is used to describe multiple exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined together to form multiple additional combinations that are not shown for the sake of simplicity.

Claims

1. A plasma source, characterized in that: The plasma source (100) comprises an upper cover (1), an insulating shell (2), an insulating medium column (3), a capacitor electrode sheet (4), and an inductor coil (5); The upper cover (1) is sealed and fixed on the insulating housing (2), and the upper cover (1) has an air inlet (11) that penetrates in the axial direction (D), and the air inlet (11) is used to introduce process gas; The insulating housing (2) has a hollow cavity (21); The insulating medium column (3) occupies a position of the hollow cavity (21) of the insulating housing (2) close to the upper cover (1) so that the portion of the hollow cavity (21) of the insulating housing (2) located away from the upper cover (1) by the insulating medium column (3) is an empty and unoccupied integral cavity (211), and the insulating medium column (3) has a plurality of through holes (31) spaced apart from each other in the radial and circumferential directions and extending through the axial direction (D), and each through hole (31) is connected to the air inlet (11) and the integral cavity (211); The capacitor electrode sheet (4) is arranged on the insulating medium column (3) so that the capacitor electrode sheet (4) and the insulating medium column (3) together form a capacitor at each through hole (31), and the capacitor is used to enable the process gas entering through the inlet channel (11) to generate a capacitively coupled plasma in the capacitor formed at each through hole (31), and the capacitively coupled plasma is discharged to the overall cavity (211); The inductor coil (5) is wound around the outside of the insulating shell (2) and corresponds in position to the overall cavity (211) of the hollow cavity (21) of the insulating shell (2). The inductor coil (5) is used to perform inductive coupling on the capacitively coupled plasma discharged from the plurality of through holes (31) into the overall cavity (211).

2. The plasma source according to claim 1, characterized in that The upper cover (1) is made of stainless steel, ceramic or quartz; The insulating shell (2) is made of ceramic; The material of the insulating medium column (3) is an inorganic dielectric, and the inorganic dielectric is selected from ceramics, quartz or glass.

3. The plasma source according to claim 1, characterized in that The capacitor electrode sheet (4) comprises a first cylindrical electrode sheet (41) and a second cylindrical electrode sheet (42) which are alternately sleeved with each other in the radial direction and separated by an insulating medium column (3); A plurality of through holes (31) are arranged in a plurality of concentric circles, and the through holes (31) on each circle are radially located between a corresponding pair of adjacent cylindrical first electrode sheets (41) and second electrode sheets (42), so that the first electrode sheets (41) and the second electrode sheets (42) and the insulating medium column (3) form a tubular capacitor at each through hole (31).

4. The plasma source according to claim 1, characterized in that The capacitor electrode sheets (4) include first electrode sheets (41) and second electrode sheets (42) in the form of a plate, which are alternately stacked along an axial direction (D) and separated by an insulating medium column (3); each first electrode sheet (41) has a plurality of first through holes (411) that are aligned with the positions of the plurality of through holes (31); each second electrode sheet (42) has a plurality of second through holes (421) that are aligned with the positions of the plurality of through holes (31); The first flat electrode sheets (41) and the second flat electrode sheets (42) which are alternately stacked and spaced apart from each other along the axial direction (D) and the insulating dielectric column (3) located between the adjacent first electrode sheets (41) and second electrode sheets (42) along the axial direction (D) form a stacked capacitor, thereby forming a stacked capacitor at each through hole (31) of the first electrode sheets (41) and the second electrode sheets (42) and the insulating dielectric column (3).

5. The plasma source according to claim 3 or 4, characterized in that: The first electrode sheets (41) of the same polarity are electrically connected together by a first lead wire (43), and the second electrode sheets (42) of the same polarity are electrically connected together by a second lead wire (44).

6. The plasma source according to claim 5, characterized in that The first lead (43) and the second lead (44) of the capacitor electrode sheet (4) and the inductor coil (5) are connected in series.

7. The plasma source according to claim 3, characterized in that: The plasma source (100) further comprises an upper insulating sheet (6), The upper insulating sheet (6) is covered on an end of the insulating medium column (3) adjacent to the upper cover (1) in the axial direction (D); The upper insulating sheet (6) has upper through holes (61) that penetrate the plurality of through holes (31); The plasma source (100) further comprises a lower insulating sheet (7), The lower insulating sheet (7) is supported on the other end of the insulating medium column (3) in the axial direction (D) and away from the upper cover (1); The lower insulating sheet (7) has through-going lower via holes (71) corresponding to the plurality of through holes (31).

8. The plasma source according to claim 1, characterized in that The plasma source (100) further comprises an inductor coil frame (8); The inductor coil frame (8) is sleeved outside the insulating shell (2) and covers at least a portion of the insulating medium column (3) and the entire integral cavity (211) along the axial direction (D). The inductor coil frame (8) is used to fix and support the inductor coil (5).

9. The plasma source according to claim 6, characterized in that: The plasma source (100) further comprises a radio frequency power supply (9), The radio frequency power source (9) is connected in series with the first lead wire (43) and the second lead wire (44) of the capacitor electrode sheet (4) and the inductor coil (5), and both ends are grounded.

10. A plasma device, characterized in that: A plasma device (1000) comprises a process chamber (200) and a plurality of plasma sources (100) according to any one of claims 1 to 9, A plurality of plasma sources (100) are arranged at intervals on the same outer surface of a process chamber (200), and an integral cavity (211) of each plasma source (100) is connected to an inner space (200a) of the process chamber (200); The process chamber (200) is used to receive plasma supplied into the process chamber (200) by a plurality of plasma sources (100) to perform a plasma treatment process.

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