Method for manufacturing display device

Abstract

The invention relates to a manufacturing method of a display device. According to one embodiment, in a method of manufacturing a display device, a process substrate is prepared. A transparent inorganic layer is formed across a display region on a transparent substrate and a peripheral region surrounding the display region, a metal layer is formed on the inorganic layer in the peripheral region, and an organic layer is formed on the inorganic layer and the metal layer. A protective film is bonded on the organic layer located at least directly above the metal layer, laser light is irradiated from the substrate side toward the metal layer, and a plurality of holes penetrating the metal layer and the organic layer are formed in the step of irradiating the laser light. The plurality of holes formed in the metal layer are arranged in a pattern corresponding to the identification information.

Description

[0001] Cross-references to related applications

[0002] This application claims the priority based on Japanese Patent Application No. 2023-094789 applied for on June 8, 2023, and cites all the contents described in the Japanese Patent Application. Technical Field

[0003] An embodiment of the present invention relates to a method for manufacturing a display device. Background Art

[0004] In recent years, display devices using organic light-emitting diodes (OLEDs) as display elements have become practical. In the manufacturing process of such display devices, laser processing is sometimes performed. During laser processing, if the laser is irradiated on the workpiece, dust is generated at the irradiated part. When the dust adheres to the product, the reliability of the display device may be reduced. In addition, the dust may also contaminate the manufacturing equipment due to the scattering of the dust.

[0005] Furthermore, when dust is collected by a dust collector, the manufacturing equipment needs to be complicated, which may increase the manufacturing cost. Summary of the invention

[0006] In general, according to an embodiment, in a method for manufacturing a display device, a processing substrate is prepared, in which a transparent inorganic layer is formed over a display area on a transparent substrate and a peripheral area surrounding the display area, a metal layer is formed on the inorganic layer in the peripheral area, an organic layer is formed on the inorganic layer and the metal layer, and a protective film is attached to at least the organic layer directly above the metal layer, and a laser is irradiated from the substrate side toward the metal layer. In the process of irradiating the laser, a plurality of holes penetrating the metal layer and the organic layer are formed, and the plurality of holes formed in the metal layer are arranged in a pattern corresponding to identification information.

[0007] In another embodiment, in a method for manufacturing a display device, a processing substrate is prepared, in which a transparent inorganic layer is formed on multiple panel portions over a transparent substrate, a metal layer is formed on the inorganic layer in a peripheral area surrounding a display area in each of the panel portions, an organic layer is formed on the inorganic layer and the metal layer, a protective film is adhered to the organic layer at least directly above the metal layer, a laser is irradiated from the substrate side toward the metal layer, and in the process of irradiating the laser, a plurality of holes are formed that penetrate the metal layer and the organic layer, and the plurality of holes formed in the metal layer are arranged in a pattern corresponding to identification information.

[0008] In another embodiment, in a method for manufacturing a display device, a metal layer is formed above a substrate, a protective film is arranged directly above the metal layer, a laser is irradiated from the substrate side toward the metal layer, and during the process of irradiating the laser, a plurality of holes arranged in a pattern corresponding to identification information are formed in the metal layer.

[0009] According to each embodiment, it is possible to provide a method for manufacturing a display device that can suppress a decrease in reliability and reduce manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a diagram showing an example of the configuration of a DSP of a display device.

[0011] Figure 2 It is a diagram showing an example of the layout of sub-pixels SP1 , SP2 , and SP3 .

[0012] Figure 3 It is along Figure 2 A schematic cross-sectional view of the display device DSP taken along line III-III in FIG.

[0013] Figure 4 This is a diagram showing an example of the configuration of a tag TG.

[0014] Figure 5 It is along Figure 4 A schematic cross-sectional view of the display device DSP taken along line VV in FIG.

[0015] Figure 6 A flowchart for explaining an example of a method for manufacturing the display device DSP.

[0016] Figure 7 It is a diagram for explaining the process of preparing a substrate for processing.

[0017] Figure 8 It is a diagram for explaining the process of cutting a processed substrate.

[0018] Fig. 9 It is a diagram for explaining the process of irradiating laser light.

[0019] Fig.10 It is a diagram for explaining the process of irradiating laser light.

[0020] Fig.11 It is a diagram for explaining the process of irradiating laser light.

[0021] Fig.12 It is a figure for demonstrating the process of peeling off a protective film.

[0022] Fig.13 It is a figure for demonstrating the process of peeling off a protective film.

[0023] Fig.14 This is a flowchart for explaining another example of the method for manufacturing the display device DSP.

[0024] Fig.15 This is a flowchart for explaining another example of the method for manufacturing the display device DSP. DETAILED DESCRIPTION

[0025] An embodiment will be described with reference to the drawings.

[0026] The disclosed content is only an example, and for those skilled in the art, the content that can be easily thought of with respect to appropriate changes that maintain the gist of the invention is of course included in the scope of the present invention. In addition, in order to make the description clearer, the width, thickness, shape, etc. of each part are sometimes schematically shown in the drawings compared with the actual method, but this is only an example and does not limit the interpretation of the present invention. In addition, in this specification and each figure, the same reference numerals are sometimes used to mark the constituent elements that perform the same or similar functions as the constituent elements described above with respect to the figures that have appeared, and repeated detailed descriptions are appropriately omitted.

[0027] It should be noted that, as needed, for easy understanding, the drawings record mutually orthogonal X-axis, Y-axis and Z-axis. The direction along the X-axis is called the first direction, the direction along the Y-axis is called the second direction, and the direction along the Z-axis is called the third direction. The situation of observing various elements parallel to the third direction Z is called top view.

[0028] The display device involved in this embodiment is an organic electroluminescent display device having, for example, an organic light emitting diode (OLED) as a display element, and can be mounted on a television, a personal computer, an in-vehicle device, a tablet terminal, a smartphone, a mobile phone terminal, etc.

[0029] Figure 1 1 is a diagram showing an example of the structure of a display device DSP. The display device DSP has a display area DA for displaying an image and a peripheral area SA surrounding the display area DA on an insulating substrate 10. The substrate 10 is a glass substrate. It should be noted that the material of the substrate 10 is not limited to a glass substrate, and any material having a high transmittance to ultraviolet wavelengths may be used.

[0030] The display area DA includes a plurality of pixels PX arranged in a matrix in the first direction X and the second direction Y. The pixel PX includes a plurality of sub-pixels SP. In one example, the pixel PX includes a red sub-pixel SP1, a green sub-pixel SP2, and a blue sub-pixel SP3. It should be noted that the pixel PX may include four or more sub-pixels including sub-pixels of other colors such as white in addition to the sub-pixels of the above three colors.

[0031] The peripheral area SA includes a tag TG and a plurality of terminals TM arranged in the first direction X. Figure 1 In the example, the label TG and the plurality of terminals TM are located on the arrow side of the second direction Y relative to the display area DA. The label TG has, for example, a pattern corresponding to the identification information of the display device DSP, which will be described in detail later. The pattern corresponding to the identification information is formed in the form of a two-dimensional code. Such a pattern is marked using a laser as described later. The plurality of terminals TM are connected to a flexible printed circuit substrate, an IC chip, etc. In addition, the plurality of terminals TM are electrically connected to various wirings (scanning lines GL, signal lines SL, power lines PL, etc.) for driving the sub-pixels SP.

[0032] The sub-pixel SP includes a pixel circuit 1 and a display element 20 driven by the pixel circuit 1. The pixel circuit 1 includes a pixel switch 2, a driving transistor 3, and a capacitor 4. The pixel switch 2 and the driving transistor 3 are switching elements composed of, for example, thin film transistors.

[0033] In the pixel switch 2, the gate electrode is connected to the scanning line GL. One of the source electrode and the drain electrode of the pixel switch 2 is connected to the signal line SL, and the other is connected to the gate electrode of the driving transistor 3 and the capacitor 4. In the driving transistor 3, one of the source electrode and the drain electrode is connected to the power line PL and the capacitor 4, and the other is connected to the anode of the display element 20. It should be noted that the configuration of the pixel circuit 1 is not limited to the example shown in the figure.

[0034] The display element 20 is an organic light emitting diode (OLED) as a light emitting element. For example, the sub-pixel SP1 includes a display element 20 that emits light corresponding to a red wavelength, the sub-pixel SP2 includes a display element 20 that emits light corresponding to a green wavelength, and the sub-pixel SP3 includes a display element 20 that emits light corresponding to a blue wavelength. The configuration of the display element 20 will be described later.

[0035] Figure 2 : is a diagram showing an example of the layout of sub-pixels SP1, SP2, and SP3. Here, the focus is on the four pixels PX surrounded by the dotted line. In each pixel PX, the sub-pixels SP1, SP2, and SP3 are arranged in the first direction X. That is, in the display area DA, a column composed of a plurality of sub-pixels SP1 arranged in the second direction Y, a column composed of a plurality of sub-pixels SP2 arranged in the second direction Y, and a column composed of a plurality of sub-pixels SP3 arranged in the second direction Y are arranged in the first direction X.

[0036] The partition wall 5 is arranged at the boundary between the sub-pixels SP1, SP2, and SP3. Figure 2In the example of , the partition 5 is formed in a lattice shape including a plurality of partitions 5X respectively located between the sub-pixels SP adjacent to each other in the first direction X and a plurality of partitions 5Y respectively located between the sub-pixels SP adjacent to each other in the second direction Y. Figure 2 In the example shown in FIG. 1 , the partition wall 5X extends parallel to the second direction Y, and the partition wall 5Y extends parallel to the first direction X. Through these partition walls 5X and 5Y, an opening OP is formed in each of the sub-pixels SP1, SP2, and SP3. Such an opening OP corresponds to the light-emitting area of ​​each sub-pixel SP. In the example shown in the figure, the area of ​​the opening OP of each sub-pixel SP is the same.

[0037] It should be noted that the layout of the sub-pixels is not limited to the illustrated example. For example, the areas of the openings OP of the sub-pixels SP may be different from each other. In addition, the sub-pixels SP1, SP2, and SP3 may not be arranged in a row. In addition, the sub-pixels SP of different colors may be arranged in the second direction Y.

[0038] Figure 3 It is along Figure 2 A schematic cross-sectional view of a display device DSP along line III-III. Figure 3 In FIG. 1 , as elements arranged in the sub-pixels SP1 , SP2 , and SP3 , the driving transistor 3 and the display element 20 are shown, and illustration of other elements is omitted.

[0039] The display device DSP includes the above-mentioned substrate 10, insulating layers 11, 12, 13, the above-mentioned partition wall 5X, and a sealing layer 14. The insulating layers 11, 12, 13 are stacked on the substrate 10 along the third direction Z. For example, the insulating layers 11, 12 are inorganic layers formed of inorganic materials, and the insulating layer 13 and the partition wall 5X are organic layers formed of organic materials. Figure 2 The partition wall 5Y shown is formed integrally with the partition wall 5X from the same material as that of the partition wall 5X.

[0040] The driving transistor 3 of each sub-pixel includes a semiconductor layer 30 and electrodes 31, 32, and 33. The electrode 31 is equivalent to a gate electrode. One of the electrodes 32 and 33 is equivalent to a source electrode, and the other is equivalent to a drain electrode. The semiconductor layer 30 is arranged between the substrate 10 and the insulating layer 11. The electrode 31 is arranged between the insulating layers 11 and 12. The electrodes 32 and 33 are arranged between the insulating layers 12 and 13, and are in contact with the semiconductor layer 30 through contact holes that penetrate the insulating layers 11 and 12. It should be noted that the structure of the driving transistor 3 is not limited to the top gate type shown in the figure, and can also be a bottom gate type.

[0041] The semiconductor layer 30 may be any of polycrystalline silicon, amorphous silicon, oxide semiconductor, etc. The electrode 31 is formed of, for example, an alloy of molybdenum and tungsten. The electrodes 32 and 33 are formed, for example, as a stack of titanium layers and aluminum layers, or a stack of molybdenum layers and aluminum layers.

[0042] The display element 20 includes a lower electrode LE, an organic EL layer OR, and an upper electrode UE. The lower electrode LE is an electrode configured for each sub-pixel SP, and is sometimes referred to as a pixel electrode. The upper electrode UE is an electrode configured in common with respect to a plurality of display elements 20, and is sometimes referred to as a common electrode. The organic EL layer OR is configured between the lower electrode LE and the upper electrode UE.

[0043] The lower electrodes LE1, LE2, and LE3 are arranged on the insulating layer 13. The partition walls 5X1, 5X2, 5X3, and 5X4 are also arranged on the insulating layer 13. Figure 3 In the example, the partitions 5X1 and 5X2 cover both ends of the lower electrode LE1 in the first direction X, the partitions 5X2 and 5X3 cover both ends of the lower electrode LE2 in the first direction X, and the partitions 5X3 and 5X4 cover both ends of the lower electrode LE3 in the first direction X. Figure 3 Although not shown in the cross section of FIG. 1 , the partition wall 5Y is also arranged on the insulating layer 13 in the same manner as the partition wall 5X, and covers both ends of the lower electrodes LE1, LE2, and LE3 in the second direction Y. When viewed from above, the lower electrodes LE1, LE2, and LE3 are Figure 2 The openings OP are shown to overlap in each case.

[0044] The lower electrodes LE1, LE2, and LE3 are electrically connected to the electrode 33 through contact holes penetrating the insulating layer 13. The lower electrodes LE1, LE2, and LE3 are formed of a metal material such as silver. However, the lower electrodes LE1, LE2, and LE3 may also be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may be a laminate of a transparent conductive material and a metal material.

[0045] The organic EL layer OR1 is located between the partitions 5X1 and 5X2 in the first direction X, includes a red light-emitting layer, and covers the lower electrode LE1. The organic EL layer OR2 is located between the partitions 5X2 and 5X3 in the first direction X, includes a green light-emitting layer, and covers the lower electrode LE2. The organic EL layer OR3 is located between the partitions 5X3 and 5X4 in the first direction X, includes a blue light-emitting layer, and covers the lower electrode LE3. Figure 3 Although not shown in the cross section of FIG. 1 , the organic EL layers OR1, OR2, and OR3 are located between the partition walls 5Y adjacent to each other in the second direction Y. That is, the organic EL layers OR1, OR2, and OR3 are respectively arranged at Figure 2 The opening OP is shown.

[0046] Although not described in detail, the organic EL layers OR1 , OR2 , and OR3 each include a functional layer such as a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer.

[0047] The upper electrode UE covers the organic EL layers OR1, OR2, OR3 and the partition walls 5X1, 5X2, 5X3, 5X4. The upper electrode UE is formed of a metal material such as magnesium and silver. However, the upper electrode UE may be formed of a transparent conductive material such as ITO or IZO.

[0048] The sealing layer 14 is disposed on the upper electrode UE. The sealing layer 14 includes an organic layer for flattening the unevenness generated by the partitions 5X1, 5X2, 5X3, and 5X4 and an inorganic layer for protecting the organic EL layers OR1, OR2, OR3, and OR4 from moisture and the like. The organic layer is formed, for example, to be thicker than the insulating layers 11, 12, and 13 and the partitions 5X1, 5X2, 5X3, and 5X4.

[0049] Figure 4 This is a diagram showing an example of the configuration of a tag TG.

[0050] exist Figure 4 In the example, the tag TG is formed into a square. The tag TG is Figure 3 The electrode 31 shown is located in the same metal layer, or the metal layer located in the same layer as the electrodes 32 and 33 is formed of at least one material selected from titanium, molybdenum, tungsten and aluminum. In one example, the tag TG is located in the same layer as the electrode 32, etc., and is formed in the form of a stack of a titanium layer and an aluminum layer, or a stack of a molybdenum layer and an aluminum layer.

[0051] The tag TG has identification information INF. The identification information INF is formed as a pattern of a plurality of holes HL penetrating the tag TG in the third direction Z. The plurality of holes HL are arranged in the first direction X and the second direction Y according to a predetermined rule to form a two-dimensional code. By reading the identification information INF with a scanner or the like, it is possible to obtain information required for product management, such as the manufacturing number and lot number of the pre-registered product.

[0052] Figure 5 It includes along Figure 4 A schematic cross-sectional view of the display device DSP shown in FIG. 5 , taken along line VV in FIG.

[0053] The display device DSP includes insulating layers IL1 and IL2. The insulating layer IL1 is an inorganic layer formed of a transparent inorganic material. For example, the insulating layer IL1 corresponds to Figure 3 The insulating layer IL2 is an organic layer formed of a transparent organic material. The insulating layer IL2 is equivalent to, for example, Figure 2 Next door 5, Figure 3 At least one of the insulating layer 13 in the sealing layer 14 or the organic layer contained in the sealing layer 14.

[0054] The insulating layer IL1 is disposed on the substrate 10. The tag TG is disposed on the insulating layer IL1. The insulating layer IL2 is disposed on the tag TG and the insulating layer IL1. A plurality of holes HL respectively penetrate the insulating layer IL2 and the tag TG and reach the insulating layer IL1. The holes HL do not penetrate the insulating layer IL1.

[0055] Next, refer to Figures 6 to 13 An example of a method for manufacturing the display device DSP will be described.

[0056] Figure 6 This is a flowchart for explaining an example of a method for manufacturing a display device DSP.

[0057] The manufacturing method shown here generally includes: a process of preparing a large processing substrate MB having multiple panel parts PNL (step ST1); a process of cutting the processing substrate MB (step ST2); a process of irradiating laser LZ (step ST3); and a process of peeling off the protective film PF (step ST4).

[0058] In step ST1, first, Figure 7 As shown in (a) of FIG. 1 , a large substrate 10 is prepared (step ST11 ). The substrate 10 is, for example, a glass substrate.

[0059] Then, if Figure 7 As shown in (b), an insulating layer IL1 as an inorganic layer is formed on the substrate 10 (step ST12). The insulating layer IL1 is formed over the display area DA and the peripheral area SA on the substrate 10. The insulating layer IL1 is formed of a transparent inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx) or silicon oxynitride (SiON).

[0060] Then, if Figure 7 As shown in (c), in the peripheral area SA, the metal layer ML is formed on the insulating layer IL1 (step ST13). In the example shown in the figure, while the metal layer ML is formed, the electrode EL is formed on the insulating layer IL1 in the display area DA.

[0061] Specifically, first, at least one metal material selected from titanium, molybdenum, tungsten and aluminum is deposited on the insulating layer IL1 to form a metal thin film. Then, a resist is formed in the area remaining as the electrode EL and the metal layer ML. Then, the metal thin film is etched using the resist as a mask. Then, the resist is removed. Thus, the electrode EL and the metal layer ML are formed. That is, the electrode EL and the metal layer ML are formed using the same material and by the same process.

[0062] For example, the electrode EL is equivalent to Figure 3 The electrodes 32 and 33, the electrode EL and the metal layer ML are formed in the form of a stack of a titanium layer and an aluminum layer, or a stack of a molybdenum layer and an aluminum layer.

[0063] Then, if Figure 7 As shown in (d) of FIG. 1 , an insulating layer IL2 as an organic layer is formed on the insulating layer IL1 , the electrode EL, and the metal layer ML (step ST14 ).

[0064] During the above-mentioned steps ST12 to ST14 , in addition to the pixel circuits 1 and the display elements 20 in the display area DA, the terminals TM and the like in the peripheral area SA are formed.

[0065] Then, if Figure 7 As shown in (e), a protective film PF is attached on the insulating layer IL2 (step ST15). At this time, the protective film PF is arranged on the insulating layer IL2 at least directly above the metal layer ML. In the example shown in the figure, the protective film PF is arranged over the display area DA and the peripheral area SA, and overlaps the entire insulating layer IL2.

[0066] The protection film PF is formed of a resin material such as polyethylene terephthalate (PET).

[0067] Thus, the substrate MB is ready for processing. Figure 8 As shown in FIG. 1 , the processing substrate MB prepared in this way has a plurality of panel portions PNL arranged in the first direction X and the second direction Y. Figure 8 In the example of FIG. 1 , the plurality of panel portions PNL are adjacent to each other in the first direction X and the second direction Y via the cut lines CL indicated by the dashed lines. Note that a gap may be provided between the respective panel portions PNL.

[0068] In step ST2, if Figure 8 As shown in FIG. 1 , the processing substrate MB is cut along the cutting lines CL for each panel portion PNL, thereby forming a single processing substrate SUB.

[0069] In step ST3, first, Fig. 9 As shown, the substrate SUB to be processed is carried into the laser irradiation device 100. The laser irradiation device 100 includes a stage 110 and a laser device 120 disposed above the stage 110.

[0070] When the processing substrate SUB is carried into the laser irradiation apparatus 100 , the processing substrate SUB is turned over so that the protection film PF of the processing substrate SUB faces the stage 110 (step ST31 ).

[0071] Then, if Fig.10 As shown in FIG. 1 , the processing substrate SUB is arranged on the workbench 110 (step ST32). At this time, the processing substrate SUB is arranged on the workbench 110 in such a manner that the protection film PF contacts the workbench 110. It should be noted that Figures 10 to 13 2 shows an enlarged cross section of a portion including the metal layer ML in the processing substrate SUB.

[0072] Then, if Fig.11 As shown, the processing substrate SUB is irradiated with laser light LZ (step ST33). At this time, the laser device 120 is located on the side of the processing substrate SUB opposite to the substrate 10. The laser device 120 is configured to emit laser light LZ of a wavelength mainly suitable for processing the metal layer ML and transmitting through the substrate 10 and the insulating layer IL1. For example, the laser device 120 is configured to emit laser light LZ of an ultraviolet wavelength. In addition, at this time, the protective film PF is in contact with the workbench 110 at the irradiation position of the laser light LZ.

[0073] The laser device 120 irradiates the laser LZ toward the metal layer ML from the substrate 10 side. The laser LZ passes through the substrate 10 and the insulating layer IL1 formed of a transparent material, and forms a hole HL penetrating the metal layer ML and the insulating layer IL2. Most of the energy of the laser LZ is used for processing the metal layer ML and the insulating layer IL2. Therefore, the laser LZ does not form a hole penetrating the protective film PF, and the workbench 110 is hardly damaged by the laser LZ. In addition, when the hole HL is formed by the laser LZ, dust 40 is generated. The dust 40 adheres to the protective film PF just above the metal layer ML.

[0074] By irradiating the laser light LZ in this way, a plurality of holes HL having a pattern corresponding to the identification information are formed in the metal layer ML. Figure 4 Label TG as shown in the above figure.

[0075] In step ST4, first, the processing substrate SUB is taken out from the laser irradiation device 100. Fig.12 As shown, the processing substrate SUB is turned over (step ST41).

[0076] Then, if Fig.13 As shown, the protection film PF is peeled off from the processing substrate SUB (step ST42). Since the dust 40 adheres to the protection film PF, the dust 40 is removed from the processing substrate SUB by peeling off the protection film PF from the processing substrate SUB.

[0077] Through the above steps, a plurality of holes HL arranged in a pattern corresponding to the identification information are formed in the metal layer ML and the insulating layer IL2 by laser irradiation.

[0078] It should be noted that if Fig.14As shown, the process of cutting the processing substrate MB for each panel part PNL (step ST2) can be performed after the process of irradiating the laser (step ST3). For example, a plurality of laser devices can be used to irradiate the plurality of tags TG of the processing substrate MB with lasers, and then the processing substrate MB can be cut for each panel part PNL.

[0079] In addition, if Fig.15 As shown, the process of cutting the processing substrate MB for each panel part PNL (step ST2) may be performed after the process of stripping the protective film PF (step ST4). In this case, in step ST42, the protective film PF is stripped from the processing substrate MB. In the case of stripping the protective film PF from the processing substrate MB, the number of times the protective film PF is stripped is reduced compared to the case of stripping the protective film PF from the processing substrate SUB cut for each panel part PNL. Thus, the manufacturing yield of the display device can be improved.

[0080] According to this embodiment, the dust 40 generated by the laser irradiation for forming the tag TG adheres to the protective film PF. As a result, the scattering of the dust generated during the laser irradiation can be suppressed. Therefore, there is no need for a dust collector or other equipment for sucking the dust, so the manufacturing cost of the display device can be suppressed.

[0081] In addition, the laser light LZ does not penetrate the protective film PF, and the stage 110 is hardly damaged by the laser light LZ. Therefore, for example, it is not necessary to prepare a stage having a through hole or a groove formed at the laser irradiation position. Therefore, the manufacturing cost of the display device can be reduced.

[0082] In addition, the dust 40 attached to the protection film PF is removed from the processing substrate SUB together with the protection film PF. Thus, the dust 40 hardly remains on the processing substrate SUB. Therefore, it is possible to suppress a decrease in the reliability of the display device.

[0083] In addition, scattering of the dust 40 can be suppressed, and contamination of the laser irradiation device 100 can be suppressed by removing the generated dust from the processing substrate SUB together with the protection film PF.

[0084] Furthermore, the tag TG formed by the above-described manufacturing method can be formed in a small space, and is suitable for a display device DSP having a small peripheral area SA.

[0085] As described above, according to the present embodiment, it is possible to provide a method for manufacturing a display device that can suppress a decrease in reliability and reduce manufacturing costs.

[0086] It should be noted that, in the above embodiment, an organic electroluminescent display device is described as an example of the display device DSP, but the display device DSP may be a display device including a liquid crystal element or an inorganic light emitting diode as a display element.

[0087] Based on the display device manufacturing method described above as an embodiment of the present invention, all display device manufacturing methods that can be appropriately designed and modified by those skilled in the art also belong to the scope of the present invention as long as they include the gist of the present invention.

[0088] Within the scope of the concept of the present invention, those skilled in the art can think of various variations, which also belong to the scope of the present invention. For example, embodiments obtained by adding, deleting or designing the above-mentioned embodiments appropriately by those skilled in the art, or embodiments obtained by adding, omitting or changing the conditions of the processes are included in the scope of the present invention as long as they have the gist of the present invention.

[0089] In addition, other effects brought about by the methods described in the above-mentioned embodiments, effects that are clear based on the records in this specification, or effects that can be appropriately thought of by those skilled in the art are of course understood as effects brought about by the present invention.

Claims

1. A method for manufacturing a display device, wherein: A processing substrate is prepared, wherein a transparent inorganic layer is formed over a display area on a transparent substrate and a peripheral area surrounding the display area. A metal layer is formed on the inorganic layer in the peripheral region, An organic layer is formed on the inorganic layer and the metal layer. A protective film is attached to at least the organic layer directly above the metal layer. irradiating laser light from the substrate side toward the metal layer, In the step of irradiating the laser beam, a plurality of holes penetrating the metal layer and the organic layer are formed. The plurality of holes formed in the metal layer are arranged in a pattern corresponding to the identification information.

2. The method for manufacturing a display device according to claim 1, wherein: The step of irradiating the laser beam is performed in a state where the protective film is in contact with the stage.

3. The method for manufacturing a display device according to claim 2, wherein: In the step of irradiating the laser beam, the protective film is in contact with the stage at a position irradiated with the laser beam.

4. The method for manufacturing a display device according to claim 1, wherein: In the laser irradiation step, holes penetrating the protective film are not formed, but dust generated as a result of the formation of holes penetrating the metal layer and the organic layer adheres to the protective film.

5. The method for manufacturing a display device according to claim 4, wherein: After irradiating the laser, The protective film is peeled off from the processing substrate.

6. The method for manufacturing a display device according to claim 1, wherein: The laser is a laser with an ultraviolet wavelength.

7. The method for manufacturing a display device according to claim 1, wherein: The substrate is a glass substrate, The inorganic layer is formed of silicon nitride (SiNx), silicon oxide (SiOx), or silicon oxynitride (SiON).

8. The method for manufacturing a display device according to claim 1, wherein: The metal layer is formed of at least one material selected from the group consisting of titanium, molybdenum, tungsten and aluminum.

9. The method for manufacturing a display device according to claim 1, wherein: Furthermore, an electrode is formed on the inorganic layer in the display area. The electrode and the metal layer are formed in the same process.

10. The method for manufacturing a display device according to claim 9, wherein: The metal layer is formed as a stack of a titanium layer and an aluminum layer, or a stack of a molybdenum layer and an aluminum layer.

11. A method for manufacturing a display device, wherein: A processing substrate is prepared, wherein a transparent inorganic layer is formed over a plurality of panel portions on a transparent substrate, In each of the panel parts, a metal layer is formed on the inorganic layer in a peripheral area surrounding a display area. An organic layer is formed on the inorganic layer and the metal layer. A protective film is attached to at least the organic layer directly above the metal layer. irradiating laser light from the substrate side toward the metal layer, In the step of irradiating the laser beam, a plurality of holes penetrating the metal layer and the organic layer are formed. The plurality of holes formed in the metal layer are arranged in a pattern corresponding to the identification information.

12. The method for manufacturing a display device according to claim 11, wherein: Before irradiating the laser, The processing substrate is cut into each of the panel portions.

13. The method for manufacturing a display device according to claim 11, wherein: After irradiation of the laser, The processing substrate is cut into each of the panel portions.

14. The method for manufacturing a display device according to claim 11, wherein: The step of irradiating the laser beam is performed in a state where the protective film is in contact with the stage.

15. The method for manufacturing a display device according to claim 11, wherein: In the laser irradiation step, no hole is formed penetrating the protective film, but dust generated by the formation of the hole penetrating the metal layer and the organic layer is attached to the protective film. Then, the protective film is peeled off from the processing substrate.

16. The method for manufacturing a display device according to claim 11, wherein: The laser is a laser with an ultraviolet wavelength, The substrate is a glass substrate, The inorganic layer is formed of silicon nitride (SiNx), silicon oxide (SiOx) or silicon oxynitride (SiON), The metal layer is formed of at least one material selected from the group consisting of titanium, molybdenum, tungsten and aluminum.

17. A method for manufacturing a display device, wherein: A metal layer is formed on the substrate. A protective film is disposed directly above the metal layer, irradiating laser light from the substrate side toward the metal layer, In the step of irradiating the laser beam, a plurality of holes arranged in a pattern corresponding to the identification information are formed in the metal layer.

18. The method for manufacturing a display device according to claim 17, wherein: The step of irradiating the laser beam is performed in a state where the protective film is in contact with the stage.

19. The method for manufacturing a display device according to claim 18, wherein: In the laser irradiation step, a hole penetrating the protective film is not formed, but dust generated by the formation of the hole penetrating the metal layer is attached to the protective film. Then, the protective film is peeled off.

20. The method for manufacturing a display device according to claim 19, wherein: The laser is a laser with an ultraviolet wavelength, The substrate is a glass substrate, The metal layer is formed of at least one material selected from the group consisting of titanium, molybdenum, tungsten and aluminum.

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