Method for manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device includes: a step of preparing a first semiconductor substrate; a step for preparing a second semiconductor substrate; a step for obtaining a plurality of semiconductor chips by singulating the second semiconductor substrate; and a step in which the first semiconductor substrate and the semiconductor chip are heated and pressurized, the first organic insulating film and the insulating film portion of the semiconductor chip are joined to each other, and the first electrode and the second electrode are joined to each other. Before the first semiconductor substrate and the semiconductor chip are heated, at least one of a first protruding amount of the first electrode protruding from the surface of the first organic insulating film and a second protruding amount of the second electrode protruding from the surface of the second organic insulating film or the insulating film portion is a protruding amount of 130% or less with respect to a protruding amount [Delta] L represented by formula (1). In formula (1), D is the film thickness of the organic insulating film, [Delta] T is the temperature difference of the heating temperatures, [alpha] 1 is the linear expansion coefficient of the organic insulating film, and [alpha] 2 is the linear expansion coefficient of the electrode. [Number Formula 1] # imgabs0 #

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device. Background Art

[0002] In recent years, three-dimensional packaging has been studied to increase the integration degree of LSI. Non-patent document 1 discloses an example of three-dimensional packaging of semiconductor chips.

[0003] Previous technical literature

[0004] Non-patent literature

[0005] Non-patent document 1: F.C. Chen et al., "System on Integrated Chips (SoIC TM) for 3D Heterogeneous Integration", 2019 IEEE 69th Electronic Components and Technology Conference, p. 594-599 (2019) Summary of the invention

[0006] Technical issues to be solved by the invention

[0007] In the case of three-dimensional mounting of such semiconductor chips, in order to miniaturize the wiring, the use of hybrid bonding technology for Wafer-to-Wafer (W2W: wafer to wafer) bonding is being studied. In this case, unlike the W2W process, the semiconductor chip is singulated using the Chip-on-Wafer (CoW: chip on chip) process. Due to dicing during singulation, debris (cutting fragments) sometimes occurs. If the debris adheres to the bonding interface of the semiconductor chip, etc. (the insulating film of the hybrid bonding), poor bonding may occur in the manufactured semiconductor device. Therefore, the use of organic insulating materials in the insulating film of the bonding interface is being studied so that the debris can be absorbed. However, since the linear expansion coefficient of the organic insulating material is different from that of the metal material used for the electrode, it expands more than the metal material due to heating during bonding, which may cause the bonding of the electrodes to each other.

[0008] An object of the present invention is to provide a method for manufacturing a semiconductor device capable of improving the adhesion between electrodes in a hybrid bonding method using an organic insulating film.

[0009] Means for solving technical problems

[0010] A method for manufacturing a semiconductor device according to one aspect of the present invention includes: a process for preparing a first semiconductor substrate, wherein the first semiconductor substrate has a first substrate body and a first organic insulating film and a first electrode arranged on one side of the first substrate body; a process for preparing a second semiconductor substrate, wherein the second semiconductor substrate has a second substrate body and a second organic insulating film and a plurality of second electrodes arranged on one side of the second substrate body; a process for singulating the second semiconductor substrate to obtain a plurality of semiconductor chips, wherein the plurality of semiconductor chips respectively have an insulating film portion corresponding to the second organic insulating film and at least one second electrode; a process for aligning the position of the second electrode of at least one semiconductor chip among the plurality of semiconductor chips with the first electrode of the first semiconductor substrate; and a process for heating and pressurizing the first semiconductor substrate and the semiconductor chip to bond the first organic insulating film and the insulating film portion to each other, and to bond the first electrode and the second electrode to each other. In the manufacturing method of the semiconductor device, before heating the first semiconductor substrate and the semiconductor chip, at least one of the first protrusion amount of the first electrode from the surface of the first organic insulating film and the second protrusion amount of the second electrode from the surface of the second organic insulating film or the insulating film portion is a protrusion amount within 130% of the protrusion amount ΔL shown in the following formula (1).

[0011] [Formula 1]

[0012]

[0013] In the above formula (1), D is the film thickness of the first organic insulating film or the film thickness of the second organic insulating film, ΔT is the temperature difference between the temperature before bonding and the heating temperature during bonding, α1 is the linear expansion coefficient of the material constituting the first organic insulating film or the second organic insulating film, and α2 is the linear expansion coefficient of the material constituting the first electrode or the second electrode.

[0014] In the method for manufacturing a semiconductor device, before heating the first semiconductor substrate and the semiconductor chip, at least one of a first protrusion amount of the first electrode from the surface of the first organic insulating film and a second protrusion amount of the second electrode from the surface of the second organic insulating film or the insulating film portion is set to be within 130% of the protrusion amount ΔL shown in the above formula (1). That is, in the stage before heating, any one of the first electrode and the second electrode is set to protrude from the surface of the organic insulating film by a predetermined amount, and even if the organic insulating film is thermally expanded during heating, the organic insulating film does not hinder the close contact (joining) between the electrodes. Therefore, according to this manufacturing method, the close contact between the first electrode and the second electrode can be improved.

[0015] The method for manufacturing a semiconductor device further includes: a step of grinding the surface of the first organic insulating film and the first electrode disposed on one side of the first semiconductor substrate; and a step of grinding the surface of the second organic insulating film and the second electrode disposed on one side of the second semiconductor substrate, and the corresponding grinding step can be performed in such a way that at least one of the first protrusion amount and the second protrusion amount becomes a protrusion amount within 85% of the protrusion amount ΔL. Ideally, the protrusion amount of each electrode is the same as the protrusion amount ΔL calculated by formula (1), but since the elastic modulus of the organic insulating film when heated is lower than that of the electrode, the organic insulating film can be pressed into the organic insulating film by the load during thermal compression bonding, and therefore, it is preferred that the protrusion amount of the electrode is smaller than the protrusion amount ΔL calculated by formula (1). Thus, the adhesion between the first electrode and the second electrode can be more reliably improved. On the other hand, when at least one of the first protrusion amount and the second protrusion amount is less than 20% of the protrusion amount ΔL, the contact between the electrodes is hindered due to the thermal expansion of the organic insulating film when heated, and the electrode bonding is insufficient. Therefore, grinding is preferably performed so that at least one of the first protrusion amount and the second protrusion amount becomes 20% or more of the protrusion amount ΔL. In this case, the bonding state between the electrodes can be made more appropriate.

[0016] In the method for manufacturing a semiconductor device, in the step of grinding the first semiconductor substrate, the first organic insulating film and the first electrode are ground so that the surface roughness Ra of each surface is less than 1 nm, and in the step of grinding the second semiconductor substrate, the second organic insulating film and the second electrode are ground so that the surface roughness Ra of each surface is less than 1 nm. In this case, since the surface roughness Ra of the organic insulating film to be bonded is reduced, when bonding the semiconductor chip to the first semiconductor substrate, the bonding strength between the first organic insulating film and the insulating film portion of the semiconductor chip can be improved. In addition, the surface roughness Ra used here is the arithmetic mean roughness (Ra) specified by JIS B 0601-2001.

[0017] In the method for manufacturing the semiconductor device, the protrusion amount of at least one of the first protrusion amount and the second protrusion amount is preferably not less than 40 nm and not more than 100 nm. In this case, even if the organic insulating film expands when heated, the organic insulating film does not hinder the close contact between the electrodes, and the close contact between the first electrode and the second electrode can be improved.

[0018] In the method for manufacturing the semiconductor device, the protrusion amount of at least one of the first protrusion amount and the second protrusion amount is preferably less than 80 nm. In this case, even if the organic insulating film expands when heated, the organic insulating film will not hinder the close contact between the electrodes, and the close contact between the first electrode and the second electrode can be improved. In addition, the protrusion amount of both the first protrusion amount and the second protrusion amount can be more than 60 nm and less than 80 nm. In this case, the organic insulating films are more reliably bonded to each other, and the electrodes are also more reliably bonded to each other, and the bonding of the two can be more reliably taken into account.

[0019] In the method for manufacturing the semiconductor device, before heating the first semiconductor substrate and the semiconductor chip, both the first protrusion amount and the second protrusion amount are preferably within 60% of the protrusion amount ΔL. In this case, even if the organic insulating film is thermally expanded during heating, the organic insulating film does not definitely hinder the close contact between the electrodes, and the close contact between the first electrode and the second electrode can be more reliably improved.

[0020] In the method for manufacturing the semiconductor device, it is preferred that in the step of heating the first semiconductor substrate and bonding the semiconductor chip, at least one of the first height difference between the first electrode and the first organic insulating film and the second height difference between the second electrode and the second organic insulating film is reduced to 10 nm or less by heating. When the first semiconductor substrate and the semiconductor chip are heated and bonded, each organic insulating film will expand thermally, but the height difference between the electrode and the insulating film during expansion is reduced to 10 nm or less, thereby more reliably preventing the organic insulating film from interfering with the close contact between the electrodes. Therefore, according to the manufacturing method, the close contact between the first electrode and the second electrode can be more reliably improved.

[0021] In the method for manufacturing a semiconductor device, the first organic insulating film and the second organic insulating film have a film thickness of 2 μm or more and 10 μm or less, and the first organic insulating film and the second organic insulating film are formed of a resin material having a glass transition temperature of 200° C. or more and 400° C. or less when cured, and the linear expansion coefficient of the resin material may be 30 ppm / K or more and 100 ppm / K or less. In this case, in a hybrid bonding method using an organic insulating film, the adhesion between electrodes can be more reliably improved.

[0022] In the method for manufacturing a semiconductor device, the resin material contained in the first organic insulating film and the second organic insulating film preferably contains bismaleimide, polyimide, a polyimide precursor, polyamide-imide, benzocyclobutene (BCB), polybenzoxazole (PBO) or a PBO precursor. In this case, even if the heating temperature becomes high when the first electrode and the second electrode are joined in the hybrid joining method, it is possible to prevent the first organic insulating film and the insulating film portion (the second organic insulating film) from softening and hindering the joining of the first electrode and the second electrode.

[0023] In the method for manufacturing the semiconductor device, at least one of the first protrusion amount and the second protrusion amount may be a protrusion amount that is greater than 50% and less than 100% of the protrusion amount ΔL. According to the research of the present inventors, at least one of the first protrusion amount and the second protrusion amount (preferably both) is a protrusion amount that is greater than 50% and less than 100% of the protrusion amount ΔL, thereby more reliably bonding the organic insulating films to each other and more reliably bonding the electrodes to each other, and more reliably bonding both.

[0024] In the method for manufacturing the semiconductor device, the bonding step may include: a step of performing temporary pressure bonding for bonding the first organic insulating film and the insulating film portion to each other; and a step of performing formal pressure bonding for bonding the first electrode and the second electrode to each other. When the heating temperature for temporary pressure bonding is set to the first heating temperature, and the heating temperature for formal pressure bonding is set to the second heating temperature, at least one of the first protrusion amount and the second protrusion amount is preferably a protrusion amount within 130% of either the protrusion amount ΔL at the first heating temperature or the protrusion amount ΔL at the second heating temperature. In this case, the organic insulating films are bonded to each other more reliably, and the electrodes are bonded to each other more reliably, so that both can be bonded more reliably. In particular, when the first heating temperature is different from the second heating temperature, in either temporary crimping or formal crimping, the protrusion amount is within 130% relative to the protrusion amount ΔL in the above formula (1), thereby more reliably bonding the organic insulating films under temporary crimping, and more reliably bonding the electrodes under formal crimping, thereby more reliably achieving the bonding of both.

[0025] In the method for manufacturing a semiconductor device, the temperature at which the first semiconductor substrate and the semiconductor chip are heated in the bonding step may be 230° C. to 280° C. In this case, the organic insulating film can be prevented from excessively melting and becoming fluid, thereby preventing the organic insulating films or electrodes from being bonded together with deviations.

[0026] In the method for manufacturing the semiconductor device, in the bonding step, the pressure when the first semiconductor substrate and the semiconductor chip are pressurized may be 2.5 MPa or more. In this case, the electrodes can be more reliably bonded to each other. In addition, when the temperature when the first semiconductor substrate and the semiconductor chip are heated is 230° C. or more and 280° C. or less, even when such a high pressure (2.5 MPa or more) is applied, deviation is unlikely to occur in the bonding of the organic insulating films or the electrodes.

[0027] Another aspect of the present invention relates to a method for manufacturing a semiconductor device, including: a process of preparing a first semiconductor substrate, wherein the first semiconductor substrate has a first substrate body and a first organic insulating film and a first electrode arranged on one side of the first substrate body; a process of preparing a second semiconductor substrate, wherein the second semiconductor substrate has a second substrate body and a second organic insulating film and a plurality of second electrodes arranged on one side of the second substrate body; a process of grinding the surface of the first organic insulating film and the first electrode arranged on one side of the first semiconductor substrate; a process of grinding the surface of the second organic insulating film and the second electrode arranged on one side of the second semiconductor substrate; a process of singulating the ground second semiconductor substrate to obtain a plurality of semiconductor chips, wherein the plurality of semiconductor chips respectively have an insulating film portion corresponding to the second organic insulating film and at least one second electrode; a process of aligning the position of the second electrode of at least one semiconductor chip among the plurality of semiconductor chips with respect to the first electrode of the first semiconductor substrate; and a process of heating and pressurizing the first semiconductor substrate and the semiconductor chip to bond the first organic insulating film and the insulating film portion to each other, and to bond the first electrode and the second electrode to each other. In the method for manufacturing a semiconductor device, when the semiconductor chip is bonded to the first semiconductor substrate by heating and pressing, at least one of a first height difference between the first electrode and the first organic insulating film and a second height difference between the second electrode and the second organic insulating film is 10 nm or less.

[0028] In the method for manufacturing a semiconductor device according to the other aspect, when the semiconductor chip is bonded to the first semiconductor substrate by heating and pressing, at least one of the first height difference between the first electrode and the first organic insulating film and the second height difference between the second electrode and the second organic insulating film is less than 10 nm. In this case, since it is pre-set that even if the organic insulating film expands more than the electrode due to heating, the organic insulating film will not hinder the close contact between the electrodes, according to the manufacturing method, the close contact between the first electrode and the second electrode can be improved. In addition, the various methods of the manufacturing method of the semiconductor device according to the other aspect can be applied alone or in combination.

[0029] Effects of the Invention

[0030] According to the present invention, it is possible to provide a method for manufacturing a semiconductor device capable of improving the adhesion between electrodes in a hybrid bonding method using an organic insulating film. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a cross-sectional view schematically showing an example of a semiconductor device (CoW) manufactured by a method for manufacturing a semiconductor device according to an embodiment of the present invention.

[0032] Figure 2 It is shown in sequence that the manufacturing Figure 1 A schematic cross-sectional view of a method of manufacturing a semiconductor device is shown.

[0033] Figure 3 It is shown in sequence that the manufacturing Figure 1 A schematic cross-sectional view of a semiconductor device method is shown, showing Figure 2 The manufacturing process after the steps shown.

[0034] Figure 4 It is shown Figure 2 and Figure 3 A diagram showing the relationship between the height of an electrode and the height of an organic insulating film in a method for manufacturing a semiconductor device shown in FIG. Figure 4 (a) shows the state when the electrode and the organic insulating film are polished (state before heating), Figure 4 (b) shows a state where the electrode and the organic insulating film are bonded (state when heated).

[0035] Figure 5 Graph showing the relationship between the protrusion amount of the electrode and the crimping yield in the example.

[0036] Figure 6 The cross-sectional photographs are observed to show the degree of adhesion between the electrodes when hybrid bonding is performed using two kinds of protrusion amounts (Cu protrusion amounts) of the electrodes and two kinds of organic insulating materials. DETAILED DESCRIPTION

[0037] Hereinafter, several embodiments of the present invention will be described in detail with reference to the accompanying drawings as needed. In the following description, the same symbols will be added to the same or corresponding parts, and repeated descriptions will be omitted. In addition, regarding the positional relationship such as up, down, left, and right, unless otherwise specified, it is based on the positional relationship shown in the accompanying drawings. In the description and claims of this specification, when using terms such as "left", "right", "front", "back", "up", "down", "above", and "below", these are intended to illustrate and do not necessarily mean that it is always this relative position. In addition, the dimensional ratios of the drawings are not limited to the ratios shown in the drawings.

[0038] In this specification, the term "layer" includes a structure of a shape formed on a part of the surface in addition to a structure of a shape formed on the entire surface when viewed from a top view. Also, in this specification, the term "process" is not just an independent process. Even if it cannot be clearly distinguished from other processes, as long as the desired effect of the process is achieved, it is also included in this term. In addition, the numerical range indicated by "to" indicates a range that includes the numerical values ​​recorded before and after the "to" as the minimum and maximum values, respectively.

[0039] (Structure of Semiconductor Device)

[0040] Figure 1FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device manufactured by a method for manufacturing a semiconductor device according to an embodiment. Figure 1 As shown, the semiconductor device 1 is an example of a semiconductor package, which includes a first semiconductor substrate 10 and a plurality of semiconductor chips 20, and has a chip-on-wafer (CoW) structure. The plurality of semiconductor chips 20 are cut into a second semiconductor substrate 200A (see FIG. Figure 2 (f)) is manufactured by singulation. A plurality of semiconductor chips 20 are mounted on the first semiconductor substrate 10 to form a three-dimensional mounting structure. The first semiconductor substrate 10 can be, for example, a substrate in which a plurality of semiconductor chips such as an LSI (Large scale Integrated Circuit) chip or a CMOS (Complementary Metal Oxide Semiconductor) sensor are formed in a portion corresponding to each semiconductor chip 20, but is not limited thereto. Each semiconductor chip 20 can be, for example, a semiconductor chip such as an LSI or a memory, but is not limited thereto. The first semiconductor substrate 10 and the plurality of semiconductor chips 20 are finely bonded to each other with the organic insulating film around them by a hybrid bonding method using an organic insulating film described later, in which each terminal electrode is tightly bonded to each other and has no positional displacement. In addition, the semiconductor device 1 can be further singulated into a separate semiconductor device 1A, which has: Figure 1 The structure shown is further monolithicized into a semiconductor chip 20; and a portion of the first semiconductor substrate 10 corresponding to the semiconductor chip 20, that is, the substrate portion (reference Figure 3 (d)).

[0041] (Method for manufacturing semiconductor device)

[0042] Next, the method for manufacturing the semiconductor device 1 is described with reference to Figure 2 and Figure 3 Provide explanation. Figure 2 is shown in sequence for manufacturing Figure 1 A schematic cross-sectional view of a method of manufacturing a semiconductor device is shown. Figure 3 is shown in sequence for manufacturing Figure 1 A schematic cross-sectional view of a semiconductor device method is shown, and is a schematic cross-sectional view of Figure 2 Schematic diagram of the process performed after the process shown.

[0043] The semiconductor device 1 can be manufactured through, for example, the following steps (a) to (g).

[0044] (a) A step of preparing a first semiconductor substrate including a first substrate body, and a first organic insulating film and a first electrode provided on one surface of the first substrate body.

[0045] (b) A step of preparing a second semiconductor substrate including a second substrate body, a second organic insulating film provided on one surface of the second substrate body, and a plurality of second electrodes.

[0046] (c) A step of polishing the surfaces of the first organic insulating film and the first electrode disposed on the one surface side of the first semiconductor substrate.

[0047] (d) A step of polishing the surfaces of the second organic insulating film and the second electrode disposed on the one surface side of the second semiconductor substrate.

[0048] (e) A step of singulating the polished second semiconductor substrate into pieces to obtain a plurality of semiconductor chips, each of which includes an insulating film portion corresponding to the second organic insulating film and at least one of the second electrodes.

[0049] (f) A step of aligning the first electrode of the first semiconductor substrate with the second electrode of at least one semiconductor chip among the plurality of semiconductor chips.

[0050] (g) A step of heating and pressurizing the first semiconductor substrate and the semiconductor chip to bond the first organic insulating film and the insulating film portion to each other and to bond the first electrode and the second electrode to each other.

[0051] [Step (a)]

[0052] Step (a) is a step of preparing a first semiconductor substrate, which is a silicon substrate having an integrated circuit formed thereon, which includes semiconductor elements and wirings connecting these elements. Figure 2 As shown in (a), a plating base layer 102 is formed on one side 101a of a first substrate main body 101 formed of silicon or the like, and a resist layer 103 having a plurality of openings 103a of a predetermined pattern is formed on the plating base layer 102 using a dry film resist (DFR). The plating base layer 102 is, for example, a Ti / Cu film, which is exposed in the plurality of openings 103a. The plating base layer 102 may be formed of other materials. When forming the resist layer 103, as shown in FIG. Figure 2 As shown in (b), copper is deposited in each opening 103a by electroplating to form the first electrode 104. The first electrode 104 may be formed of a material other than copper. Figure 2 As shown in (c) of FIG. 1 , the resist layer 103 is removed. Thus, gaps 104 a are formed between the plurality of first electrodes 104 .

[0053] Next, an organic insulating material for the first insulating film is prepared. As an organic insulating material used here, for example, polyimide (PI) is a resin material having a glass transition temperature Tg of 250°C or more after curing and a linear expansion coefficient of 30 ppm / K or more and 100 ppm / K or less. As an organic insulating material for the first insulating film, other resin materials having a glass transition temperature Tg of 200°C or more and 400°C or less after curing and a linear expansion coefficient of 30 ppm / K or more and 100 ppm / K or less can be used. In addition to polyimide, the organic insulating material can also use a polyimide precursor (for example, polyimide ester or polyimide acid), polyamide-imide, bismaleimide, benzocyclobutene (BCB), polybenzoxazole (PBO) or a PBO precursor. These organic insulating materials have a lower elastic modulus than inorganic materials such as silicon oxide (SiO2) and are soft materials. By using such an organic material, when the organic insulating films are bonded together in the step (g) described later, even if there are fine debris on the insulating film, it will be absorbed into the organic insulating film to prevent poor bonding caused by the debris, thereby enabling reliable bonding of the organic insulating films. The organic insulating material is prepared as a liquid or solvent-soluble material.

[0054] When preparing liquid organic insulating materials, such as Figure 2 As shown in (d) of FIG. 1 , an organic insulating material 105 is applied by spin coating on one surface 101a of the first substrate main body 101. Thus, the organic insulating material 105 fills the gaps 104a between the first electrodes 104 and covers the entirety of the plurality of first electrodes 104. When the organic insulating material 105 is applied in this way, Figure 2 As shown in (e), the semi-finished product including the organic insulating material 105 is heated at a high temperature (e.g., 350° C. or higher) for a predetermined time (e.g., 2 hours) to cure the organic insulating material 105. Thus, the organic insulating material 105 is cured to form a first insulating film 105A. Thus, the first semiconductor substrate 100 is formed.

[0055] [Step (b)]

[0056] Step (b) is the same process as step (a) and is a step of preparing a second semiconductor substrate, which is a silicon substrate having an integrated circuit formed thereon consisting of semiconductor elements and wirings connecting these elements. Figure 2 As shown in (a), a plating base layer 202 is formed on one side 201a of a second substrate main body 201 formed of silicon or the like, and a resist layer 203 having a plurality of openings 203a of a predetermined pattern is formed on the plating base layer 202 using a dry film resist. When the resist layer 203 is formed, Figure 2As shown in (b), copper is deposited in each opening 203a by electroplating to form the second electrode 204. The second electrode 204 may be formed of a material other than copper. Figure 2 As shown in (c) of FIG. 1 , the resist layer 203 is removed. Thus, gaps 204 a are formed between the plurality of second electrodes 204 .

[0057] Next, an organic insulating material for the second insulating film is prepared. The organic insulating material used here is, for example, polyimide, a resin material having a glass transition temperature Tg of 250°C or higher and a linear expansion coefficient of 30 ppm / K or higher and 100 ppm / K or lower after curing. The organic insulating material for the second insulating film may be other resin materials having a glass transition temperature Tg of 200°C or higher and 400°C or lower and a linear expansion coefficient of 30 ppm / K or higher and 100 ppm / K or lower after curing. Other organic insulating materials for the second insulating film may be the same as other organic insulating materials for the first insulating film, and description thereof is omitted. When preparing a liquid organic insulating material, as Figure 2 As shown in (d) of FIG. 2 , an organic insulating material 205 is applied by spin coating on one side 201a of the second substrate main body 201. Thus, the organic insulating material 205 fills the gaps 204a between the second electrodes 204 and covers the entirety of the plurality of second electrodes 204. When the organic insulating material 205 is applied in this way, Figure 2 As shown in (e), the semi-finished product including the organic insulating material 205 is heated at a high temperature (e.g., 350° C. or higher) for a predetermined time (e.g., 2 hours) to cure the organic insulating material 205. Thus, the organic insulating material 205 is cured to form a second insulating film 205A. Thus, the second semiconductor substrate 200 is formed.

[0058] [Step (c)]

[0059] Next, when forming the first semiconductor substrate 100 including the first insulating film 105A formed of a cured organic insulating material, as shown in FIG. Figure 2 As shown in (e) and (f) of FIG. 1 , the surface 105a of the first insulating film 105A is polished by CMP (Chemical Mechanical Polishing). In step (c), not only the first insulating film 105A but also the tip portion of the first electrode 104 is polished. In step (c), Figure 4As shown in (a), the front end 104b of the first electrode 104 is selectively polished by the CMP method so that the front end 104b of the first electrode 104 protrudes from the surface 105b of the first insulating film 105B. The protrusion amount (first protrusion amount) of the first electrode 104 from the surface 105b of the first insulating film 105B is set to the protrusion amount ΔL, for example, according to the following formula (2), considering that the first insulating film 105B expands due to heating during bonding in the later-described step (g).

[0060] [Formula 2]

[0061]

[0062] In the above formula (2), D is the film thickness of the first insulating film 105B (before heating, at room temperature, in μm), ΔT is the temperature difference between the temperature before bonding (room temperature) and the heating temperature during bonding in step (g), and α PI is the linear expansion coefficient (10 ―6 / K)(corresponding to α1), α Cu is the linear expansion coefficient (10 ―6 / K) (corresponding to α2). In addition, the room temperature referred to here is 25°C.

[0063] The protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B may be consistent with the protrusion amount ΔL calculated by the above formula (2), as long as it is a protrusion amount within 130% of the protrusion amount ΔL, preferably a protrusion amount within 85% of the protrusion amount ΔL, and preferably a protrusion amount within 60% of the protrusion amount ΔL. That is, it is preferred that the protrusion amount of the first electrode 104 is smaller than the calculated protrusion amount ΔL. On the other hand, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B may be a protrusion amount of 20% or more relative to the protrusion amount ΔL calculated by the above formula (2), and preferably a protrusion amount of 40% or more relative to the protrusion amount ΔL. Furthermore, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B may be a protrusion amount of 50% or more and within 100% relative to the protrusion amount ΔL calculated by the above formula (2). The protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B is preferably 40 nm to 100 nm, more preferably 60 nm to 80 nm. The selective polishing by CMP can be achieved by changing the material composition of the slurry used in the CMP method or the polishing speed.

[0064] By grinding by CMP, debris and the like on the surface of the first semiconductor substrate 100A are also removed. By grinding by step (c), the surface roughness Ra of the surface of the first semiconductor substrate 100A, that is, the surface 105b of the first insulating film 105B and the surface of the front end 104b of the first electrode 104 are ground to less than 1 nm. By grinding the surfaces of the insulating film and the electrode in this way, bonding can be performed more reliably when bonding in the step (g) described later. In addition, the surface roughness Ra used here is the arithmetic mean roughness (Ra) specified by JIS B0601-2001. The thickness of the first insulating film 105B after such grinding can be, for example, not less than 2 μm and not more than 10 μm.

[0065] [Step (d)]

[0066] Next, when forming the second insulating film 205A formed of the cured organic insulating material, similarly to step (c), Figure 2 As shown in (e) and (f) of FIG. 1 , the surface 205a of the second insulating film 205A is polished by the CMP method. In the step (d), not only the second insulating film 205A but also the front end portion of the second electrode 204 is polished. In the step (d), for example, the front end 204b of the second electrode 204 is selectively polished by the CMP method so that the front end 204b of the second electrode 204 protrudes from the surface 205b of the second insulating film 205B. Regarding the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B (the second protrusion amount), similarly to the protrusion amount of the first electrode 104, considering that the second insulating film 205B expands due to heating during bonding in the step (g) described later, it is set to the protrusion amount ΔL, for example, according to the above formula (2). However, when calculating the protrusion amount of the second electrode 204, in the above formula (2), D is the film thickness of the second insulating film 205B (before heating, room temperature), ΔT is the temperature difference between the temperature before bonding in step (g) (room temperature) and the heating temperature during bonding, and α PI is the linear expansion coefficient of the material (PI: polyimide) constituting the second insulating film 205A, α Cu is the linear expansion coefficient of the material (copper) constituting the second electrode 204 .

[0067] As in the case of the first electrode 104, the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B may be consistent with the protrusion amount ΔL calculated by the above formula (2), as long as it is a protrusion amount within 130% of the protrusion amount ΔL, preferably a protrusion amount within 85% of the protrusion amount ΔL, and preferably a protrusion amount within 60% of the protrusion amount ΔL. That is, it is preferred that the protrusion amount of the second electrode 204 is smaller than the calculated protrusion amount ΔL. On the other hand, the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B may be a protrusion amount of 20% or more relative to the protrusion amount ΔL calculated by the above formula (2), preferably a protrusion amount of 40% or more relative to the protrusion amount ΔL. Furthermore, the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B may be a protrusion amount of 50% or more and within 100% relative to the protrusion amount ΔL calculated by the above formula (2). Furthermore, the amount of protrusion of the second electrode 204 from the surface 205b of the second insulating film 205B is preferably not less than 40nm and not more than 100nm, and more preferably not less than 60nm and not more than 80nm. The amount of protrusion of the second electrode 204 may be the same as or different from the amount of protrusion of the first electrode 104. When the amount of protrusion of the second electrode 204 is different from the amount of protrusion of the first electrode 104, it is preferred that the arithmetic mean of the amount of protrusion ΔL1 of the first electrode 104 and the amount of protrusion ΔL2 of the second electrode 204 is consistent with the amount of protrusion ΔL calculated by the above formula (2) or is within the above range (for example, within 130% relative to ΔL). Furthermore, the second electrode 204 is in a shape that is recessed from the surface 205b of the second insulating film 205B, and the first electrode 104 may be in a shape that protrudes from the surface 105b of the first insulating film 105B by the amount as described above, or may be the opposite configuration. In this case, the amount of the recessed electrode from the insulating film surface is set as negative, and the amount of the protruding electrode from the insulating film surface is set as positive, and the above arithmetic mean is calculated. Moreover, it is preferred that the arithmetic mean is consistent with the protrusion amount ΔL calculated by the above formula (2) or is within the above range (for example, within 130% relative to ΔL).

[0068] By polishing by CMP, debris and the like on the surface of the second semiconductor substrate 200A are also removed. By polishing by step (d), the surface roughness Ra of the surface of the second semiconductor substrate 200A, that is, the surface 205b of the second insulating film 205B and the surface of the front end 204b of the second electrode 204 are polished to be less than 1 nm. By polishing the surfaces of the insulating film and the electrode in this way, bonding can be performed more reliably when bonding in the step (g) described later. The thickness of the second insulating film 205A after such polishing can be, for example, not less than 2 μm and not more than 10 μm.

[0069] [Step (e)]

[0070] Next, when the grinding of the second semiconductor substrate 200A is completed, in step (e), the ground second semiconductor substrate 200A is singulated to obtain a plurality of semiconductor chips 20, each of which has an insulating film portion 205C corresponding to the second insulating film 205B and at least one second electrode 204. In step (e), Figure 3 As shown in (a), the second semiconductor substrate 200 is placed on a dicing tape 206, and is singulated into a plurality of semiconductor chips 20 from the second insulating film 205B toward the second substrate body 201 by a cutting method such as dicing. When the second semiconductor substrate 200A is cut, the second insulating film 205B may be coated with a protective material or the like, and then singulated. By step (e), the second insulating film 205B of the second semiconductor substrate 200A is Figure 3 As shown in (a), the second semiconductor substrate 200A is divided into insulating film portions 205C corresponding to the semiconductor chips 20. The second substrate body 201 is similarly divided into corresponding substrate portions 201B. As a dicing method for singulating the second semiconductor substrate 200A, for example, plasma dicing, stealth dicing, or laser dicing can be used.

[0071] [Step (f)]

[0072] Next, when the second semiconductor substrate 200A is singulated to form a plurality of semiconductor chips 20, as shown in FIG. Figure 3 As shown in (b), the second electrodes 204 of the semiconductor chips 20 are aligned with the first electrodes 104 of the first semiconductor substrate 100A. In step (f), the semiconductor chip 20 is picked up using the pad P, and the second electrodes 204 are aligned with the first electrodes 104.

[0073] [Step (g)]

[0074] Next, when the second electrode 204 of the semiconductor chip 20 is aligned with the first electrode 104 of the first semiconductor substrate 100A, as shown in FIG. Figure 3 As shown in (c), the first semiconductor substrate 100A and the semiconductor chip 20 are heated to a predetermined high temperature, for example, 200°C to 350°C, and the semiconductor chip 20 is pressed against the first semiconductor substrate 100A at a predetermined pressure (for example, 0.8 MPa). The pressing process is continued for about 1 hour using, for example, a pressing member R. The above-mentioned heating is maintained during the pressing process. During the heating process, in the first semiconductor substrate 100A, as shown in FIG. Figure 4As shown in (b), the first insulating film 105B thermally expands (the first electrode 104 also thermally expands), and the surface 105b of the first insulating film 105B is substantially consistent with the surface 104b of the first electrode 104. More specifically, the height difference between the first electrode 104 and the first insulating film 105B (first height difference) is less than 10nm. The height difference referred to here refers to the amount of depression when the surface 104b of the first electrode 104 is recessed from the surface 105b of the first insulating film 105B, and the amount of protrusion when the surface 104b of the first electrode 104 protrudes more than the surface 105b of the first insulating film 105B. And, similarly, during the heat treatment, on the semiconductor chip 20, as Figure 4 As shown in (b), the insulating film portion 205C also thermally expands (the second electrode 204 also thermally expands), and the surface 205c of the insulating film portion 205C is substantially consistent with the surface 204b of the second electrode 204. More specifically, the height difference (second height difference) between the second electrode 204 and the insulating film portion 205C is less than 10nm. The height difference referred to here refers to the amount of depression when the surface 204b of the second electrode 204 is recessed from the surface 205c of the insulating film portion 205C, and the amount of protrusion when the surface 204b of the second electrode 204 protrudes from the surface 205c of the insulating film portion 205C.

[0075] Thus, in the method for manufacturing a semiconductor device according to the present embodiment, during heating, the surface 104b of the first electrode 104 and the surface 105b of the first insulating film 105B are roughly consistent with each other, and the mixed bonding is performed in a state where the surface 204b of the second electrode 204 and the surface 205c of the insulating film portion 205C are roughly consistent with each other. By performing mixed bonding in this state, when bonding the first insulating film 105B of the first semiconductor substrate 100A and the insulating film portion 205C of the semiconductor chip 20, the first electrode 104 of the first semiconductor substrate 100 and the second electrode 204 of the semiconductor chip 20 can be more securely docked and bonded. In addition, the bonding of the insulating films to each other and the bonding of the electrodes to each other can be performed simultaneously, or after the insulating films are bonded to each other, further pressing can be performed to bond the electrodes to each other. By such bonding, a Figure 1 The semiconductor device 1 is shown.

[0076] After the insulating films are bonded to each other, in the case where the electrodes are further bonded to each other by pressing, in step (g), a temporary pressure bonding step for bonding the first insulating film 105B and the insulating film portion 205C to each other and a final pressure bonding step for bonding the first electrode 104 and the second electrode 204 to each other are performed. In this bonding method, even in any of the temporary pressure bonding and the final pressure bonding, as described above, it is preferred that the surface 105b of the first insulating film 105B and the surface 104b of the first electrode 104 are substantially consistent (for example, the height difference between the first electrode 104 and the first insulating film 105B is 10 nm or less), and the surface 205b of the second insulating film 205B and the surface 204b of the second electrode 204 are substantially consistent (for example, the height difference between the second electrode 204 and the second insulating film 205B is 10 nm or less). Therefore, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B in the grinding steps (c) and (d) are preferably within the above-mentioned range even when the temperature during temporary crimping (first temperature) and the temperature during formal crimping (second temperature) are respectively applied to the above-mentioned formula (2).

[0077] That is, the protrusion amount of the first electrode 104 and the second electrode 204 before heating is preferably a protrusion amount within 130% of each protrusion amount ΔL calculated by applying the temperature of temporary crimping and formal crimping to formula (2), preferably a protrusion amount within 85% of each protrusion amount ΔL, and preferably a protrusion amount within 60% of each protrusion amount ΔL. Similarly, the protrusion amount of the first electrode 104 and the second electrode 204 before heating can be a protrusion amount of more than 20% relative to each protrusion amount ΔL calculated by applying the temperature of temporary crimping and formal crimping to formula (2), preferably a protrusion amount of more than 40% relative to each protrusion amount ΔL. In addition, similarly to the above, the protrusion amount of the first electrode 104 and the second electrode 204 before heating can be a protrusion amount of more than 50% and within 100% relative to each protrusion amount ΔL calculated by applying the temperature of temporary crimping and formal crimping to formula (2).

[0078] Furthermore, when performing temporary crimping and formal crimping, the heating temperature and the pressing pressure in the temporary crimping may be different from the heating temperature and the pressing pressure in the formal crimping, or may be partially different. For example, the heating temperature in the temporary crimping is 150°C to 400°C, and the heating temperature in the formal crimping may be 200°C to 350°C. Furthermore, the pressing pressure in the temporary crimping is 1MPa to 6MPa, and the pressing pressure in the formal crimping may be 1MPa to 20MPa. According to the research of the present inventors, in either the temporary crimping or the formal crimping, when the heating temperature is set to 230°C or higher and 280°C or lower (250°C as an example), even if the pressing pressure is set to 2.5MPa or higher, 3MPa or higher, 5MPa or higher, or 7MPa or higher, the semiconductor chip 20 is not likely to be displaced relative to the first semiconductor substrate 100A. Furthermore, by increasing the pressurization pressure, in addition to shortening the joining time and improving the joining strength in step (g), the first electrode 104 and the second electrode 204 (copper electrodes) are elastically deformed and contracted due to the pressurization, and the apparent ΔL of formula (2) becomes smaller. Therefore, even if the protrusion amount ΔL is greater than the above-mentioned preferred range, it is possible to properly connect, or the joining temperature can be lowered.

[0079] In this way, Figure 3 As shown in (d), the first semiconductor wafer 100 and the plurality of semiconductor chips 20 bonded to each other by hybrid bonding can be further singulated. The semiconductor device 1A includes at least one semiconductor chip 20 and a substrate portion 201B corresponding to the semiconductor chip 20 in the first semiconductor wafer 100 .

[0080] As described above, according to the method for manufacturing a semiconductor device according to the present embodiment, before heating the first semiconductor substrate 100A and the semiconductor chip 20, one or both of the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205c of the insulating film portion 205C are within 130% of the protrusion amount ΔL shown in the above formula (2). That is, in the stage before heating, the first electrode 104 and the second electrode 204 are set to protrude from the surface of the organic insulating film by a predetermined amount, and even if the organic insulating film is thermally expanded during heating, the organic insulating film does not hinder the close contact (joining) between the electrodes. Therefore, according to this manufacturing method, even when an organic insulating material is used in the insulating film, the close contact between the first electrode 104 and the second electrode 204 can be improved.

[0081] Furthermore, in the method for manufacturing a semiconductor device according to the present embodiment, one or both of the protrusion amount of the first electrode 104 before heating and the protrusion amount of the second electrode 204 before heating can be 40 nm or more and 100 nm or less. In this case, even if the organic insulating film expands during heating, the organic insulating film does not hinder the electrodes from being butted against each other or coming into close contact, and the close contact between the first electrode 104 and the second electrode 204 can be improved.

[0082] Furthermore, in the method for manufacturing a semiconductor device according to the present embodiment, one or both of the protrusion amount of the first electrode 104 before heating and the protrusion amount of the second electrode 204 before heating may be 60 nm or more and 80 nm or less. In this case, even if the organic insulating film expands during heating, the organic insulating film does not hinder the electrodes from being butted against each other or coming into close contact, and the close contact between the first electrode 104 and the second electrode 204 can be improved.

[0083] Furthermore, in the manufacturing method of the semiconductor device involved in the present embodiment, in the process of heating and bonding the semiconductor chip 20 to the first semiconductor substrate 100A, the height difference between the first electrode 104 and the first insulating film 105B and the height difference between the second electrode 204 and the insulating film portion 204C are, for example, 10 nm or less by heating. When the first semiconductor substrate 100A and the semiconductor chip 20 are heated and bonded, each organic insulating film sometimes thermally expands. However, by making the electrode protrude in advance in such a way that the height difference between the electrode and the insulating film when expanded is 10 nm or less, it is possible to more reliably prevent the organic insulating film from interfering with the docking or close contact between the electrodes. Thus, according to this manufacturing method, the close contact between the first electrode 104 and the second electrode 204 can be more reliably improved.

[0084] Furthermore, in the method for manufacturing a semiconductor device according to the present embodiment, the resin material contained in the first insulating film 105B and the second insulating film 205B may contain bismaleimide, polyimide, a polyimide precursor, polyamide-imide, benzocyclobutene (BCB), polybenzoxazole (PBO), or a PBO precursor. In this case, in the hybrid bonding method, even if a high temperature is applied when bonding the first electrode 104 and the second electrode 204, it is possible to prevent the insulating film portion 205C corresponding to the first insulating film 105B and the second insulating film 205B from softening and hindering the bonding of the first electrode 104 and the second electrode 204.

[0085] Furthermore, in the method for manufacturing a semiconductor device according to the present embodiment, one or both of the protrusion amount of the first electrode 104 before heating and the protrusion amount of the second electrode 204 before heating may be a protrusion amount that is greater than 50% and less than 100% of the protrusion amount ΔL calculated by the above formula (2). According to the research of the present inventors, the protrusion amounts of the first electrode 104 and the second electrode 204 are greater than 50% and less than 100% of the protrusion amount ΔL, thereby more reliably bonding the organic insulating films to each other and more reliably bonding the electrodes to each other, and more reliably bonding both.

[0086] Furthermore, in the method for manufacturing a semiconductor device according to the present embodiment, in the step of grinding the first semiconductor substrate 100, the first insulating film 105B and the first electrode 104 are ground so that the surface roughness Ra of each surface is 1 nm or less, and in the step of grinding the second semiconductor substrate 200, the second insulating film 205B and the second electrode 204 are ground so that the surface roughness Ra of each surface is 1 nm or less. By such grinding, since the surface roughness Ra of the organic insulating film to be bonded is reduced, when the semiconductor chip 20 is bonded to the first semiconductor substrate 100A, the bonding strength between the first insulating film 105B and the insulating film portion 205C of the semiconductor chip 20 can be improved. In addition, similarly, the bonding between the first electrode 104 and the second electrode 204 can be more reliably performed, and the connection resistance between the electrodes can be more reliably reduced.

[0087] Furthermore, in the method for manufacturing a semiconductor device according to the present embodiment, the bonding step (g) may include: a step of performing temporary pressure bonding for bonding the first insulating film 105B and the insulating film portion 205C to each other; and a step of performing final pressure bonding for bonding the first electrode 104 and the second electrode 204 to each other. When the heating temperature for temporary pressure bonding is set to the first heating temperature, and the heating temperature for final pressure bonding is set to the second heating temperature, it is preferred that one or both of the protrusion amount of the first electrode 104 before heating and the protrusion amount of the second electrode 204 before heating are within 130% of either the protrusion amount ΔL at the first heating temperature or the protrusion amount ΔL at the second heating temperature. In this case, the organic insulating films can be bonded to each other more reliably, and the electrodes can be bonded to each other more reliably, so that both can be bonded more reliably. In particular, when the first heating temperature is different from the second heating temperature, in either temporary crimping or formal crimping, the protrusion amount is within 130% relative to the protrusion amount ΔL in the above formula (2), thereby more reliably bonding the organic insulating films under temporary crimping, and more reliably bonding the electrodes under formal crimping, thereby more reliably balancing the bonding of the two.

[0088] Example

[0089] Hereinafter, the present invention will be described in more detail using examples, but the present invention is not limited to the examples.

[0090] First, a pair of test wafers corresponding to the first semiconductor substrate 100A and the second semiconductor substrate 200A (multiple semiconductor chips 20) were prepared. In this preparation, polyimide HD4100 (manufactured by HD MicroSystems, Ltd., product name) and polyimide HD7010 (manufactured by HD MicroSystems, Ltd., product name) were prepared as materials for the organic insulating film of the test wafers. The glass transition temperature of polyimide HD4100 after curing is 290°C, and the linear expansion coefficient (CTE) is 100 ppm / K (10 ―6 / ℃). The glass transition temperature of polyimide HD7010 after curing is 267℃ and the linear expansion coefficient (CTE) is 75ppm / K. In addition, the linear expansion coefficient of copper used for electrodes is 16.8ppm / K (10 ―6 / ℃).

[0091] Next, as Example 1, by Figure 2 According to the method shown, a plurality of first electrodes 104, which are copper pillars (Cu) of 10 μm square and 6 μm high, are formed on the first substrate main body 101 as a silicon substrate by a semi-additive method. Then, the first substrate main body 101 is covered by spin coating the above-mentioned polyimide HD4100 so as to cover the first electrode 104, and then baked at 375° C. for 2 hours in a nitrogen atmosphere to cure. Then, the surfaces of the first electrode 104 and the cured product of the polyimide HD4100 (equivalent to the first insulating film 105A) are polished by a CMP method. Thus, the first semiconductor substrate 100A is manufactured. In addition, the second semiconductor substrate 200A is manufactured by the same method. During the polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B are 46.7 nm. Furthermore, the thickness D of each insulating film is 3.9 μm.

[0092] The surface roughness Ra of each surface of the first semiconductor substrate 100A and the second semiconductor substrate 200A polished by CMP was 0.667 nm. The surface roughness Ra of the surface of the organic insulating layer was 0.375 nm. The surface roughness Ra was measured using a scanning probe microscope SPI4000 (manufactured by Hitachi High-Technology Corporation, product name) according to the method for measuring the arithmetic mean roughness (Ra) specified in JIS B 0601-2001.

[0093] Next, one of the first test wafers corresponding to the second semiconductor substrate 200A was diced into a plurality of semiconductor chips using a blade dicing machine DFD-6362 (manufactured by DISCO Corporation, product name). The size of the diced chips was 5 mm×5 mm.

[0094] Next, the electrodes of the 18 singulated semiconductor chips (corresponding to the semiconductor chip 20) were aligned with the other of the first test wafer (corresponding to the first semiconductor substrate 100A), and then pressed against each other and heated at 300°C for 2 hours. The temperature difference before and after heating was 275°C. The pressing force was 0.8MP. Afterwards, when confirming whether the crimping was performed, the crimping yield was 100%. That is, it was possible to confirm that all semiconductor chips were in close contact with the first semiconductor substrate 100A. In addition, whether the crimped semiconductor chip can be crimped is determined by touching it with tweezers to see if it does not fall off.

[0095] Next, as Example 2, a first semiconductor substrate 100A and a second semiconductor substrate 200A were manufactured by the same method as in Example 1. As a difference from Example 1, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 78.8 nm. In addition, the thickness D of each insulating film was 3.9 μm. The second semiconductor substrate 200A manufactured in this way was singulated into a plurality of semiconductor chips, and the 18 singulated semiconductor chips were heat-pressed to the first semiconductor substrate 100A. The conditions for heating and pressing were the same as in Example 1, for example, the pressing temperature was 300°C (the temperature difference before and after heating was 275°C). When confirming whether the pressing was performed, the pressing yield was 17%.

[0096] Next, as Example 3, a first semiconductor substrate 100A and a second semiconductor substrate 200A were manufactured by the same method as in Example 1. As a difference from Example 1, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 12.7 nm. In addition, the thickness D of each insulating film was 4.0 μm. The second semiconductor substrate 200A manufactured in this way was singulated into a plurality of semiconductor chips, and the 90 singulated semiconductor chips were heat-pressed to the first semiconductor substrate 100A. The conditions for heat-pressing were the same as in Example 1, except that the heating temperature was set to 350°C (the temperature difference before and after heating was 325°C). When confirming whether the pressing was performed, the pressing yield was 100%.

[0097] Next, as Example 4, a first semiconductor substrate 100A and a second semiconductor substrate 200A were manufactured by the same method as in Example 1. As a difference from Example 1, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 46.7nm. In addition, the thickness D of each insulating film was 3.9μm. The second semiconductor substrate 200A manufactured in this way was singulated into a plurality of semiconductor chips, and the 18 singulated semiconductor chips were heat-pressed to the first semiconductor substrate 100A. The conditions for heat-pressing were the same as in Example 1, except that the heating temperature was set to 350°C (the temperature difference before and after heating was 325°C). When confirming whether the pressing was performed, the pressing yield was 100%.

[0098] Next, as Example 5, a first semiconductor substrate 100A and a second semiconductor substrate 200A were manufactured by the same method as in Example 1. As a difference from Example 1, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 78.8 nm. In addition, the thickness D of each insulating film was 3.9 μm. The second semiconductor substrate 200A manufactured in this way was singulated into a plurality of semiconductor chips, and the 18 singulated semiconductor chips were heat-pressed to the first semiconductor substrate 100A. The conditions for heat-pressing were the same as in Example 1, except that the heating temperature was set to 350°C (the temperature difference before and after heating was 325°C). When confirming whether the pressing was performed, the pressing yield was 83%.

[0099] Next, as Example 6, a first semiconductor substrate 100A and a second semiconductor substrate 200A were produced in the same manner as in Example 1 except that polyimide HD7010 was used instead of the material used for the insulating film. As a difference from Example 1, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 13.0 nm. In addition, the thickness D of each insulating film was set to 4.2 μm. The second semiconductor substrate 200A produced in this way was singulated into a plurality of semiconductor chips, and the singulated 90 semiconductor chips were heat-pressed to the first semiconductor substrate 100A. The conditions for heat-pressing were the same as in Example 1 except that the heating temperature was set to 350° C. (the temperature difference before and after heating was 325° C.). When confirming whether the pressing was performed, the pressing yield was 100%.

[0100] Next, as Example 7, a first semiconductor substrate 100A and a second semiconductor substrate 200A were manufactured by the same method as Example 6. As a difference from Example 6, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 91.5nm. In addition, the thickness D of each insulating film was 3.9μm. The second semiconductor substrate 200A manufactured in this way was singulated into a plurality of semiconductor chips, and the 12 singulated semiconductor chips were heat-pressed to the first semiconductor substrate 100A. The conditions for heating and pressing were the same as those in Example 6, for example, the heating temperature was 350°C. When confirming whether the pressing was performed, the pressing yield was 17%.

[0101] Next, as Example 8, a first semiconductor substrate 100A and a second semiconductor substrate 200A were manufactured by the same method as Example 6. As a difference from Example 6, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 52.7nm. In addition, the thickness D of each insulating film was 4.0μm. The second semiconductor substrate 200A manufactured in this way was singulated into a plurality of semiconductor chips, and the six singulated semiconductor chips were heat-pressed to the first semiconductor substrate 100A. The conditions for heating and pressing were different from those in Example 6. For example, the heating temperature was 300°C (the temperature difference before and after heating was 275°C). When confirming whether the pressing was performed, the pressing yield was 67%.

[0102] Next, as Comparative Example 1, a first semiconductor substrate 100A and a second semiconductor substrate 200A were produced by the same method as in Example 6. As a difference from Example 6, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 91.5 nm. In addition, the thickness D of each insulating film was 3.9 μm. The second semiconductor substrate 200A produced in this way was singulated into a plurality of semiconductor chips, and the six singulated semiconductor chips were crimped to the first semiconductor substrate 100A. The crimping conditions were the same as in Example 6, except that the heating temperature was set to 300°C (the temperature difference before and after heating was 275°C). When confirming whether crimping was performed, the crimping yield was 0%.

[0103] The conditions in Examples 1 to 7 and Comparative Example 1 are summarized in Table 1 below.

[0104] [Table 1]

[0105]

[0106] In addition, the relationship between the protrusion amount and the crimping yield in Examples 1 to 7 and Comparative Examples is shown in Table 2 below. The calculated ΔL value calculated according to Formula (2) and the deviation rate of the calculated ΔL value from the actual electrode protrusion amount are shown in Table 2 below. The deviation rate is the value (percentage) of the electrode protrusion amount divided by the calculated ΔL value. In addition, Figure 5 The same relationship is also shown.

[0107] [Table 2]

[0108]

[0109] As can be seen from Table 2, when the protrusion amount of the first electrode and the protrusion amount of the second electrode are within 130% of the ΔL calculated value, it can be confirmed that the organic insulating films or the electrodes are in close contact with each other. In addition, when the protrusion amount of the first electrode and the protrusion amount of the second electrode are within 85% of the ΔL calculated value, it can be confirmed that the organic insulating films or the electrodes are more reliably in close contact with each other (the yield is 60% or more). In addition, when the protrusion amount of the first electrode and the protrusion amount of the second electrode are within 60% of the ΔL calculated value, it can be confirmed that the organic insulating films or the electrodes are further more reliably in close contact with each other (the yield is 100%).

[0110] and, Figure 6 The bonding state of the electrodes in Example 3, Example 5, Example 6, and Example 7 is shown. More specifically, the photograph of the electrode with a protrusion of 10 nm and a PI type of HD4100 corresponds to Example 3, the photograph of the electrode with a protrusion of 80 nm and a PI type of HD4100 corresponds to Example 5, the photograph of the electrode with a protrusion of 10 nm and a PI type of HD7010 corresponds to Example 6, and the photograph of the electrode with a protrusion of 80 nm and a PI type of HD7010 corresponds to Example 7. In any example, the pressing temperature is 350°C. Figure 6 As shown, compared with Example 3 and Example 6 in which the electrode protrusion amount is 10 nm, Example 5 and Example 7 in which the electrode protrusion amount is 80 nm, it can be confirmed that the bonding surfaces of the electrodes are fused to each other and become a more suitable close contact state. That is, when the deviation rate relative to the calculated value of ΔL is more than 20%, it can be confirmed that the electrodes are in a more suitable close contact state. In addition, focusing on Example 5, it can be seen that the deviation rate of the electrode protrusion amount relative to the calculated value of ΔL is 75%, that is, the deviation rate is within the range of 50% to 100%, thereby improving the yield of crimping (mainly the bonding of organic insulating films to each other) and also improving the bonding strength between the electrodes. That is, it can be seen that it is possible to take into account both the improvement of the bonding strength between the organic insulating films and the improvement of the bonding strength between the electrodes.

[0111] Next, the deviation of the semiconductor chip during bonding at a compression bonding temperature of 300°C and 250°C was evaluated. First, as Example 9, a first semiconductor substrate 100A and a second semiconductor substrate 200A were produced in the same manner as in Example 8. As a difference from Example 8, during CMP polishing, the protrusion amount of the first electrode 104 from the surface 105b of the first insulating film 105B and the protrusion amount of the second electrode 204 from the surface 205b of the second insulating film 205B were set to 60 nm. The second semiconductor substrate 200A produced in this way was singulated into a plurality of semiconductor chips, and one of the singulated semiconductor chips was heat-compressed to the first semiconductor substrate 100A. In addition, in this test, the electrodes were joined in a daisy chain. The conditions for heat-compression bonding were different from those in Example 8, and the heating temperature was 250°C (the temperature difference before and after heating was 225°C). In addition, the pressing pressure was 3MPa, 5MPa, and 7.5MPa, respectively. In this bonding method, by lowering the heating temperature, even when the pressurizing pressure is increased to 3 MPa or more (2.5 MPa or more), the semiconductor chip is hardly shifted. On the other hand, when the heating temperature is set to 300°C and the pressurizing pressure is set to 3 MPa, the semiconductor chip is slightly shifted (about 7 μm), and when the pressurizing pressure is set to 5 MPa, the semiconductor chip is shifted (about 17 μm).

[0112] As described above, it has been confirmed from the above examples that by making the electrodes protrude a predetermined amount from the surface of the organic insulating film in consideration of the expansion of the organic insulating film, the adhesion between the electrodes can be improved in the hybrid bonding method using the organic insulating film.

[0113] Explanation of symbols

[0114] 1, 1A-semiconductor device, 10-first semiconductor substrate, 20-semiconductor chip, 100, 100A-first semiconductor substrate, 101-first substrate body, 101a-one side, 104-first electrode, 104b-front end, 105-organic insulating material, 105A, 105B-first insulating film, 105a, 105b-surface, 200, 200A-second semiconductor substrate, 201-second substrate body, 201a-one side, 204-second electrode, 204b-front end, 205-organic insulating material, 205A, 205B-second insulating film, 205C-insulating film portion, 205c-surface.

Claims

1. A method for manufacturing a semiconductor device, wherein include: A step of preparing a first semiconductor substrate, wherein the first semiconductor substrate has a first substrate body and a first organic insulating film and a first electrode provided on one surface of the first substrate body; A step of preparing a second semiconductor substrate, the second semiconductor substrate having a second substrate body, a second organic insulating film provided on one surface of the second substrate body, and a plurality of second electrodes; The step of singulating the second semiconductor substrate into pieces to obtain a plurality of semiconductor chips, each of which has an insulating film portion corresponding to the second organic insulating film and at least one of the second electrodes; a step of aligning the first electrode of the first semiconductor substrate with the second electrode of at least one semiconductor chip among the plurality of semiconductor chips; and The first semiconductor substrate and the semiconductor chip are heated and pressurized to bond the first organic insulating film and the insulating film portion to each other, and to bond the first electrode and the second electrode to each other, Before the first semiconductor substrate and the semiconductor chip are heated, at least one of a first protrusion amount of the first electrode from the surface of the first organic insulating film and a second protrusion amount of the second electrode from the surface of the second organic insulating film or the insulating film portion is a protrusion amount within 130% of a protrusion amount ΔL represented by the following formula (1), [Formula 1] In formula (1), D is the film thickness of the first organic insulating film or the film thickness of the second organic insulating film, ΔT is the temperature difference between the temperature before bonding and the heating temperature during bonding, α1 is the linear expansion coefficient of the material constituting the first organic insulating film or the second organic insulating film, and α2 is the linear expansion coefficient of the material constituting the first electrode or the second electrode.

2. The method for manufacturing a semiconductor device according to claim 1, further comprising: include: a step of polishing the surfaces of the first organic insulating film and the first electrode disposed on the one surface side of the first semiconductor substrate; and a step of polishing the surfaces of the second organic insulating film and the second electrode disposed on the one surface side of the second semiconductor substrate, The corresponding polishing step is performed so that at least one of the first protrusion amount and the second protrusion amount becomes a protrusion amount within 85% of the protrusion amount ΔL.

3. The method for manufacturing a semiconductor device according to claim 2, in, In the step of polishing the first semiconductor substrate, the polishing is performed so that the surface roughness Ra of each surface of the first organic insulating film and the first electrode becomes 1 nm or less. In the step of polishing the second semiconductor substrate, polishing is performed so that the surface roughness Ra of each surface of the second organic insulating film and the second electrode becomes 1 nm or less.

4. The method for manufacturing a semiconductor device according to any one of claims 1 to 3, in, At least one of the first protrusion amount and the second protrusion amount is greater than or equal to 40 nm and less than or equal to 100 nm.

5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, in, Both the first protrusion amount and the second protrusion amount are in a range of 60 nm to 80 nm.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, in, Before the first semiconductor substrate and the semiconductor chip are heated, at least one of the first protrusion amount and the second protrusion amount is a protrusion amount of 20% or more relative to the protrusion amount ΔL.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, in, Before the first semiconductor substrate and the semiconductor chip are heated, both the first protrusion amount and the second protrusion amount are within 60% of the protrusion amount ΔL.

8. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, in, At least one of the first protrusion amount and the second protrusion amount is a protrusion amount that is greater than or equal to 50% and less than or equal to 100% of the protrusion amount ΔL.

9. The method for manufacturing a semiconductor device according to any one of claims 1 to 8, in, The bonding process comprises: performing a temporary pressure bonding step for partially bonding the first organic insulating film and the insulating film to each other; and performing a process of performing a full crimping process for joining the first electrode and the second electrode to each other, When the heating temperature during the temporary crimping is set to the first heating temperature, and the heating temperature during the formal crimping is set to the second heating temperature, at least one of the first protrusion amount and the second protrusion amount is a protrusion amount within 130% relative to either the protrusion amount ΔL at the first heating temperature or the protrusion amount ΔL at the second heating temperature.

10. The method for manufacturing a semiconductor device according to any one of claims 1 to 9, in, In the step of heating and bonding the semiconductor chip to the first semiconductor substrate, at least one of a first height difference between the first electrode and the first organic insulating film and a second height difference between the second electrode and the second organic insulating film is reduced to 10 nm or less by heating.

11. A method for manufacturing a semiconductor device, comprising: include: A step of preparing a first semiconductor substrate, wherein the first semiconductor substrate has a first substrate body and a first organic insulating film and a first electrode provided on one surface of the first substrate body; A step of preparing a second semiconductor substrate, the second semiconductor substrate having a second substrate body, a second organic insulating film provided on one surface of the second substrate body, and a plurality of second electrodes; a step of polishing the surfaces of the first organic insulating film and the first electrode disposed on the one surface side of the first semiconductor substrate; a step of polishing the surfaces of the second organic insulating film and the second electrode disposed on the one surface side of the second semiconductor substrate; The step of singulating the ground second semiconductor substrate into pieces to obtain a plurality of semiconductor chips, each of which has an insulating film portion corresponding to the second organic insulating film and at least one of the second electrodes; a step of aligning the first electrode of the first semiconductor substrate with the second electrode of at least one semiconductor chip among the plurality of semiconductor chips; and The first semiconductor substrate and the semiconductor chip are heated and pressurized to bond the first organic insulating film and the insulating film portion to each other, and to bond the first electrode and the second electrode to each other, When the semiconductor chip is bonded to the first semiconductor substrate by heating and pressing, at least one of a first height difference between the first electrode and the first organic insulating film and a second height difference between the second electrode and the second organic insulating film is 10 nm or less.

12. The method for manufacturing a semiconductor device according to any one of claims 1 to 11, in, The first organic insulating film and the second organic insulating film have a thickness of 2 μm or more and 10 μm or less, The first organic insulating film and the second organic insulating film are formed of a resin material having a glass transition temperature of 200° C. or higher and 400° C. or lower when cured, and a linear expansion coefficient of the resin material of 30 ppm / K or higher and 100 ppm / K or lower.

13. The method for manufacturing a semiconductor device according to any one of claims 1 to 12, in, The resin material included in the first organic insulating film and the second organic insulating film includes bismaleimide, polyimide, a polyimide precursor, polyamideimide, benzocyclobutene (BCB), polybenzoxazole (PBO), or a PBO precursor.

14. The method for manufacturing a semiconductor device according to any one of claims 1 to 13, in, In the bonding step, the first semiconductor substrate and the semiconductor chip are heated to a temperature of 230° C. or higher and 280° C. or lower.

15. The method for manufacturing a semiconductor device according to any one of claims 1 to 14, in, In the bonding step, the pressure at the time of pressurizing the first semiconductor substrate and the semiconductor chip is 2.5 MPa or more.

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