Spraying assembly, spraying cavity and process equipment of semiconductor device

Abstract

The invention discloses a spraying assembly, a spraying cavity and process equipment of a semiconductor device. The spraying assembly comprises a first gas distribution part which is located on the spraying disc, so that active gas introduced from the upper gas inlet end is diffused to the periphery for the first time through the first gas distribution part; the second gas guide part is positioned on the spraying disc, is distributed at the periphery of the first gas distribution part, and is used for receiving the active gas diffused for the first time and diffusing the active gas for the second time, so that the active gas is uniformly distributed on the surface of the spraying disc; and the spraying disc is provided with a plurality of spraying holes, so that the active gas is uniformly introduced into the reaction cavity below the spraying disc. Through the spraying assembly, the uniformity of the active gas before reaching the surface of the wafer can be improved, and the inactivation rate of the active gas before reaching the surface of the wafer can be effectively reduced, so that the reduction effect on a metal oxide film on the surface of the wafer is improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor manufacturing equipment, and in particular to a spray component, a spray chamber, and process equipment for semiconductor devices. Background Art

[0002] During the pre-processing of the wafer, if the metal film on the surface of the wafer is oxidized, it is usually necessary to introduce active gas to reduce the metal oxide film on the surface of the wafer to a metal film. For example, the metal copper (Cu) film on the surface of the wafer is oxidized to a copper oxide (CuO) film, and active gas can be introduced to reduce the copper oxide film. If the copper oxide film cannot be reduced well, it will not be able to serve as a conductive interconnection later due to the weak conductivity of copper oxide.

[0003] In the prior art, when the active gas is introduced into the reaction chamber, a spray plate and related components are usually made of quartz material to reduce the contact between the active gas and the metal material of the components. However, due to processing limitations, the quartz spray plate and related quartz components can only be made into a single-layer structure, which affects its gas homogenization effect. In order to achieve a better gas homogenization effect, it is usually achieved by increasing the number of holes on the quartz spray plate or adopting a gas homogenization structure of a multi-layer cavity. For example, a multi-layer structure including a buffer chamber, a sub-chamber and a spray plate can be adopted, but this gas homogenization method is difficult to process due to its complex structure. Moreover, for active gases, the complex structure is not easy to transmit active gases. Because when the active gas passes through the multi-layer cavity structure, it will have multiple contacts with the buffer chamber, the sub-chamber and the spray plate, resulting in the reducing components in the active gas being neutralized by the metal surfaces of these components, thereby losing activity.

[0004] In order to solve the above problems existing in the prior art, the art urgently needs an improved spray structure that can improve the uniformity of the active gas before it reaches the wafer surface, and can also effectively reduce the deactivation rate of the active gas before it reaches the wafer surface, thereby enhancing the reduction effect of the metal oxide film on the wafer surface. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a spray assembly, a spray chamber, and a process equipment for a semiconductor device, which can improve the uniformity of the active gas before it reaches the wafer surface, and can also effectively reduce the deactivation rate of the active gas before it reaches the wafer surface, thereby improving the reduction effect of the metal oxide film on the wafer surface.

[0007] Specifically, the above-mentioned spray assembly provided according to the first aspect of the present invention includes: a first air distribution part, located on the spray plate, so that the active gas introduced from the upper air inlet end is diffused toward the periphery once through the first air distribution part; a second air guide part, located on the spray plate and distributed around the first air distribution part, receiving the active gas diffused out once, and diffusing it for a second time, so that the active gas is evenly distributed on the surface of the spray plate; and the spray plate is provided with a plurality of spray holes, so as to evenly pass the active gas into the reaction chamber below.

[0008] Furthermore, in some embodiments of the present invention, surfaces of the first air dividing portion and the second air guiding portion are covered with a ceramic coating.

[0009] Furthermore, in some embodiments of the present invention, the surface of the spray plate is covered with the ceramic coating or the material of the spray plate is quartz.

[0010] Furthermore, in some embodiments of the present invention, the first gas separation portion is a gas separation cone structure, and the active gas flows along the cone surface of the gas separation cone structure toward the edge thereof to perform the primary diffusion toward the periphery.

[0011] Furthermore, in some embodiments of the present invention, the interior of the gas dividing cone structure includes an air guide channel, the air inlet of the air guide channel is located on the inclined surface, and the air outlet of the air guide channel is located at the bottom of the gas dividing cone structure, so that the active gas flows to the bottom of the gas dividing cone structure.

[0012] Furthermore, in some embodiments of the present invention, the air guide channel includes two air outlets, wherein the first air outlet is located at the inner circle of the bottom of the air dividing cone structure, and the second air outlet is located at the outer circle of the bottom of the air dividing cone structure, so that the active gas is evenly distributed in the entire area of ​​the bottom of the air dividing cone structure.

[0013] Furthermore, in some embodiments of the present invention, the interior of the gas dividing cone structure includes a first gas guiding channel and a second gas guiding channel, wherein the intersection of the midline angles of the first gas guiding channel is below the bottom plane of the gas dividing cone structure, so that the active gas flows out from the inner circle of the bottom of the gas dividing cone structure, and the intersection of the midline angles of the second gas guiding channel is above the bottom plane of the gas dividing cone structure, so that the active gas flows out from the outer circle of the bottom of the gas dividing cone structure.

[0014] Furthermore, in some embodiments of the present invention, the airflow distribution of the active gas on the surface of the spray plate depends on the centerline angle of the first air guide channel and / or the second conductor channel, wherein the centerline angle of the first air guide channel is increased to increase the active gas in the central area of ​​the spray plate, and the centerline angle of the second air guide channel is increased to increase the active gas in the edge area of ​​the spray plate.

[0015] Furthermore, in some embodiments of the present invention, the second air guide portion is an air guide fan structure, and the inclination angle of the fan surface of the air guide fan structure is parallel to the extension of the cone surface of the air dividing cone structure.

[0016] In addition, the above-mentioned spray chamber provided according to the second aspect of the present invention includes: a cavity, the inner surface of which is provided with a quartz lining, and the top of the cavity is provided with an air inlet end for introducing active gas; and the above-mentioned spray assembly provided by the first aspect of the present invention, which is arranged inside the cavity and is used to evenly introduce the active gas into the reaction chamber below.

[0017] In addition, the process equipment of the above-mentioned semiconductor device provided according to the third aspect of the present invention includes a reaction chamber, inside which a wafer with a surface covered with a metal oxide film is placed; and the above-mentioned spray chamber provided by the second aspect of the present invention, which is arranged above the reaction chamber and evenly introduces active gas into the reaction chamber to reduce the metal oxide film on the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0019] Figure 1 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present invention is shown;

[0020] Figure 2 A schematic structural diagram of a spray assembly provided according to some embodiments of the present invention is shown;

[0021] Figure 3A for Figure 2 a first side cross-sectional view of the spray assembly shown; and

[0022] Figure 3B for Figure 2 A second side cross-sectional view of the spray assembly is shown.

[0023] Reference numerals:

[0024] 100 Process equipment for semiconductor devices;

[0025] 110 reaction chamber;

[0026] 111 heating plate;

[0027] 120 spray chamber;

[0028] 121 cavity;

[0029] 122 Quartz Lining;

[0030] 123 intake end;

[0031] 200 spray assembly;

[0032] 210 First Division of Qi;

[0033] 220 second air guide;

[0034] 230 spray pan;

[0035] 231 spray hole;

[0036] 240 gas channel;

[0037] 241 first air guide channel;

[0038] 242 second air guide channel;

[0039] 250 air wing;

[0040] α the vertex angle; and

[0041] β base angle. DETAILED DESCRIPTION

[0042] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0043] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0045] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0046] As mentioned above, due to processing limitations, the quartz spray plate and related quartz material components can only be made into a single-layer structure, which affects its gas uniformity effect. In order to achieve a better gas uniformity effect, it is usually achieved by increasing the number of holes on the quartz spray plate, or adopting a gas uniformity structure with a multi-layer cavity. For example, a gas uniformity structure with a multi-layer cavity including a buffer cavity, a sub-cavity and a spray plate can be adopted, but this gas uniformity method is difficult to process due to its complex structure. Moreover, for active gases, the complex structure is not easy to transmit active gases. Because when the active gas passes through the multi-layer cavity structure, it will have multiple contacts with the buffer cavity, the sub-cavity and the spray plate, causing the reducing components in the active gas to be neutralized by the metal surfaces of these components, thereby losing their activity.

[0047] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a spray assembly, a spray chamber, and a process equipment for semiconductor devices, which can improve the uniformity of the active gas before it reaches the wafer surface, and can also effectively reduce the deactivation rate of the active gas before it reaches the wafer surface, thereby improving the reduction effect of the metal oxide film on the wafer surface.

[0048] In some non-limiting embodiments, the spray assembly provided in the first aspect of the present invention can be configured in the spray chamber provided in the second aspect of the present invention. Further, the spray chamber provided in the second aspect of the present invention can be configured in the process equipment of the semiconductor device provided in the third aspect of the present invention.

[0049] The working principle of the above-mentioned spray assembly will be described below in combination with some semiconductor device process equipment and embodiments of the spray chamber. Those skilled in the art will understand that these semiconductor device process equipment and embodiments of the spray chamber are only some non-limiting implementations provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of the spray assembly. Similarly, the spray assembly is also only a non-limiting implementation provided by the present invention, and does not constitute a limitation on these semiconductor device process equipment and the configuration objects in the spray chamber.

[0050] Please see Figure 1 , Figure 1 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present invention is shown.

[0051] like Figure 1As shown, in some embodiments of the present invention, the process equipment 100 of the semiconductor device may include a reaction chamber 110. A heating plate 111 may be provided inside the reaction chamber 110, on which a wafer is placed for heating the wafer so as to perform a thin film deposition process on the surface of the wafer to obtain a metal thin film, for example, a copper film is deposited. However, since a dense and stable passivation layer cannot be formed on the copper surface, the copper surface is easily continuously oxidized. In the semiconductor back-end integration process, after the copper wiring operation is completed, the copper surface will be affected by other processes, thereby producing copper oxide. Since copper oxide has weak conductivity and cannot subsequently serve as a conductive interconnect, it is necessary to introduce active gas into the reaction chamber to reduce the metal oxide film on the surface of the wafer.

[0052] In this regard, Figure 1 As shown, the process equipment 100 of the semiconductor device may further include a spray chamber 120. The spray chamber 120 may be disposed above the reaction chamber 110, and is used to uniformly introduce active gas into the reaction chamber 110 to reduce the metal oxide film on the surface of the wafer.

[0053] Specifically, the spray chamber 120 may include a chamber 121 and a spray assembly 200. Figure 1 As shown, an air inlet 123 is provided above the cavity 121 for introducing active gas. Optionally, the air inlet 123 may be connected to a remote plasma system (RPS) to dissociate hydrogen gas through the remote plasma system, thereby generating reducing hydrogen radicals as active gas, which are introduced into the spray chamber 120 from the air inlet 123.

[0054] like Figure 1 As shown, the spray assembly 200 can be arranged inside the cavity 121, and used to evenly pass the active gas into the reaction chamber 110 below. The surface inside the cavity 121 can be provided with a quartz lining 122. Optionally, the quartz lining 122 can be arranged on the top surface of the cavity 121 and on the surrounding walls to reduce the contact between the active gas (hydrogen free radicals) and the metal parts of each component, thereby avoiding the recombination of hydrogen atoms. Preferably, in addition to distributing the quartz lining 122 on both sides of the spray assembly 200, it can also be arranged on the inner wall of the reaction chamber 110 to further reduce the contact between the active gas (hydrogen free radicals) and the metal parts of each component, and reduce the deactivation rate of the active gas (hydrogen free radicals) before reaching the wafer surface.

[0055] Next, see Figure 2 , Figure 2 A schematic structural diagram of a spray assembly provided according to some embodiments of the present invention is shown.

[0056] like Figure 2As shown, in some embodiments of the present invention, the spray assembly 200 may include: a first gas distribution part 210, a second gas guide part 220 and a spray plate 230. The first gas distribution part 210 is located on the spray plate 230, so that the active gas introduced from the upper air inlet end 123 can be diffused to the periphery once through the first gas distribution part 210. The second gas guide part 220 is located on the spray plate 230 and distributed around the first gas distribution part 210, and can receive the active gas that has been diffused once and diffuse it twice, so that the active gas is evenly distributed on the surface of the spray plate 230. A plurality of spray holes 231 may be provided on the spray plate 230 to evenly pass the active gas into the reaction chamber 110 below.

[0057] Furthermore, a dense ceramic coating (such as Al2O3) can be formed on the surface of the first gas distribution part 210, the second gas guide part 220, and the spray plate 230 of the spray assembly 200 through surface treatment operations to isolate the reaction between the active gas and the metal parts of each component, thereby enhancing the efficiency of the active gas reaching the wafer surface. Since the components in these spray assemblies 200 are usually made of metal materials, by coating the surfaces of the components with ceramic coatings, the efficiency of the active gas reaching the wafer surface can be enhanced without changing the processing methods of the components. Furthermore, the surface treatment may include, but is not limited to, methods such as anodizing and thermal spraying.

[0058] In some alternative embodiments, the material of the spray plate 230 may also be directly selected from quartz. The combination of the quartz spray plate 230, the first gas splitter 210 covered with a ceramic coating, and the second gas guide 220 may also prevent the reactive gas from reacting with the metal part, thereby enhancing the efficiency of the reactive gas reaching the wafer surface.

[0059] Compared with the prior art, the materials of the spray chamber and the spray plate are quartz materials, so there are disadvantages such as processing limitations, long delivery time and high cost, which is not conducive to rapid research and development. In this embodiment, the spray component 200 with a surface covered with a ceramic coating can replace the above-mentioned quartz spray chamber and spray plate structure, reducing the cost and production cycle, and ensuring the reducing nature of the active gas before reaching the wafer surface, so that the metal oxide film on the wafer surface can be completely reduced.

[0060] Please continue to see Figure 2 In some optional embodiments, the first gas distributor 210 in the spray assembly 200 may be a gas distributor cone structure, and the active gas may flow along the cone surface of the gas distributor cone structure toward its edge to diffuse toward the periphery. By adding the first gas distributor 210 of the gas distributor cone structure to the spray plate 230, the active gas flowing from the central air inlet end 123 may be dispersed to the surface of the spray plate 230.

[0061] Furthermore, in order to ensure the uniform distribution of the active gas at the bottom of the gas distribution cone structure, Figure 2 As shown, the interior of the gas separation cone structure of the first gas separation portion 210 may include a gas guide channel 240. The gas inlet of the gas guide channel 240 may be located on the inclined surface, and the gas outlet of the gas guide channel 240 may be located at the bottom of the gas separation cone structure, so that the active gas can flow to the bottom of the gas separation cone structure.

[0062] Specifically, in some optional embodiments, the air guide channel 240 may include two air outlets, wherein the first air outlet may be located at the inner circle of the bottom of the air dividing cone structure of the first air dividing portion 210, and the second air outlet may be located at the outer circle of the bottom of the air dividing cone structure, so that the active gas can be evenly distributed over the entire area of ​​the bottom of the air dividing cone structure. For example, the air guide channel 240 in the first air dividing portion 210 may include an air inlet and two air outlets, so that the side cross-sectional view corresponding to the air guide channel 240 may be displayed as a "human" shaped structure.

[0063] In some preferred embodiments, it can be combined with reference to Figure 3A and Figure 3B , Figure 3A for Figure 2 A first side cross-sectional view of the spray assembly shown, Figure 3B for Figure 2 A second side cross-sectional view of the spray assembly is shown.

[0064] like Figure 2 As shown, in some optional embodiments, the interior of the gas distribution cone structure of the first gas distribution portion 210 may include a first gas guide channel 241 and a second gas guide channel 242. Figure 3A As shown, the first air guide channel 241 is inclined inward from top to bottom, wherein the intersection point A of the line angle can be located below the bottom plane of the air dividing cone structure, so that the active gas can flow along the cone surface of the air dividing cone structure toward its edge, and can flow out from the inner circle of the bottom of the air dividing cone structure through the first air guide channel 241, so that the active gas is distributed on the surface of the spray plate 230 corresponding to the inner circle of the bottom of the air dividing cone structure. Further, the midline angle of the first air guide channel 241 can range from 10° to 90°.

[0065] Furthermore, if Figure 3BAs shown, the second gas guide channel 242 is inclined outward from top to bottom, wherein the intersection point B of the line angle can be located above the bottom plane of the gas dividing cone structure, so that the active gas can flow along the inclined surface of the gas dividing cone structure toward its edge, and can also flow out from the outer circle of the bottom of the gas dividing cone structure through the second gas guide channel 242, so that the surface of the quartz spray plate 230 corresponding to the outer circle of the bottom of the gas dividing cone structure is also distributed with active gas. Further, the midline angle of the second gas guide channel 242 can range from 10° to 120°.

[0066] It can be understood that, combined with Figure 3A and Figure 3B As shown, the first air outlet corresponding to the first air guide channel 241 arranged in the inner circle is oriented toward the central area of ​​the spray plate 230 at the bottom of the air dividing cone structure, while the second air outlet corresponding to the second air guide channel 242 arranged in the outer circle is oriented toward the edge area of ​​the spray plate 230. While ensuring that the active gas also flows on the outside of the bottom of the air dividing cone structure, it is also more conducive to guiding the active gas to the edge of the spray plate 230.

[0067] Furthermore, in the above-mentioned embodiment of the present invention, the airflow distribution of the active gas reaching the wafer surface can be controlled by adjusting the size of the midline angle of the first gas guide channel 241 and / or the second gas guide channel 242 inside the gas distribution cone structure of the first gas distribution part 210 according to the airflow distribution requirements of the active gas on the wafer surface in different deposition processes. Specifically, by increasing the midline angle of the first gas guide channel 241, the active gas in the central area of ​​the spray plate 230 can be increased. Increasing the midline angle of the second gas guide channel 242 can increase the active gas in the edge area of ​​the spray plate 230.

[0068] In some preferred embodiments, the centerline angle of the first gas guide channel 241 in the first gas distribution section 210 can be increased, and the centerline angle of the second gas guide channel 242 can be reduced. In this way, after passing through the gas distribution cone structure of the first gas distribution section 210, the central gas of the spray plate 230 increases and the edge gas decreases. The surface of the wafer in the reaction chamber 110 after passing through the spray plate 230 will also present the same active gas flow distribution, that is, the active gas in the center area of ​​the wafer exceeds the edge area. On the contrary, the active gas flow distribution reaching the wafer surface is opposite. That is to say, in this embodiment, the airflow distribution of the active gas reaching the wafer surface can be controlled by changing the direction of the gas outlet corresponding to each gas guide channel in the first gas distribution section 210.

[0069] Those skilled in the art can understand that the scheme of controlling the airflow distribution of the active gas on the surface of the wafer by adjusting the midline angle of the first air guide channel 241 located in the inner circle and / or the second air guide channel 242 located in the outer circle is only a non-limiting implementation method provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific scheme that is convenient for the public to implement, rather than to limit the scope of protection of the present invention. Optionally, in other embodiments, those skilled in the art can also use air guide channels of other structures based on the concept of the present invention to adjust the airflow distribution of the active gas on the surface of the wafer to achieve the same technical effect.

[0070] Please continue to refer to 3A. It can be seen from the first side section of the spray assembly 200 that the air dividing cone structure of the first air dividing portion 210 can be composed of one vertex angle α and two bottom angles β, and the size of the two angles depends on the caliber of the air inlet end 123 in the spray chamber 120 and the distance between the first air dividing portion 210 and the air inlet end 123. The vertex angle α can range from 5° to 60°, and the bottom angle β can range from 10° to 75°.

[0071] Please continue to return Figure 2 In order to allow the active gas to flow more smoothly to the edge of the spray plate 230, in some optional embodiments, the second air guide portion 220 in the spray assembly 200 may be an air guide fan structure, and is distributed around the first air divider 210. Since the air guide fan structure of the second air guide portion 220 is an extension of the lower edge of the air divider cone structure of the first air divider 210, the fan surface inclination angle of the air guide fan structure of the second air guide portion 220 mainly depends on the inclination angle of the cone surface of the air divider cone structure of the first air divider 210, that is, Figure 3A The degree of the base angle β in .

[0072] Specifically, if Figure 3B As shown, the fan-surface inclination angle of the air guide fan structure of the second air guide portion 220 can be substantially parallel to the extension of the conical surface of the air dividing cone structure of the first air dividing portion 210, so that the active gas that is guided down along the conical surface of the air dividing cone structure of the first air dividing portion 210 for primary diffusion can be received and made to diffuse secondary along the inclined fan-surface of the air guide fan structure of the second air guide portion 220, so that the active gas can be more evenly dispersed on the surface of the spray plate 230, which is conducive to the active gas to evenly pass through the spray plate 230 and reach the wafer surface. In this embodiment, the airflow distribution of the active gas reaching the wafer surface can be further controlled by changing the number and position distribution of the second air guide portions 220.

[0073] Furthermore, if Figure 3BAs shown, preferably, the first air distribution part 210 can be formed by an air distribution cone structure above and a support column below it. The second air guide part 220 can be formed by an air guide fan structure above and a support column below it. On the support column of the first air distribution part 210, an air guide wing 250 with a certain inclination angle from top to bottom can be provided, so as to help guide the active gas flowing to the bottom of the air distribution cone structure to the edge to a certain extent, and avoid it from gathering in the central area of ​​the bottom of the air distribution cone. The specific structure of the air guide wing 250 is not limited to the wing-shaped structure. In other embodiments, a cone-shaped structure or the like can also be selected, as long as there is a certain inclined surface from top to bottom so that the active gas can be guided outward along its inclined surface.

[0074] It can be understood that when the first air separation part 210 and the second air guide part 220 are respectively an air separation cone structure and an air guide fan structure, the surface of the support column used to support the air separation cone and the air guide fan is also surface treated and covered with a ceramic coating to isolate the active gas from the metal reaction inside.

[0075] Next, a preferred embodiment of the present invention will be provided. During the actual film forming process, when the copper oxide film on the surface of the wafer needs to be completely reduced to a copper film and the reduction area is required to cover the entire wafer surface, the first air guide channel 241 located in the inner circle of the first air distribution section 210 can preferably have an inward inclination angle of 20° to 40°, and an outward inclination angle of 60° to 80° for the second air guide channel 242 located in the outer circle, and an inclination angle of 15° to 20° for the fan surface of the air guide fan structure of the second air guide section 220, so that the active gas reaching the wafer surface after passing through the spray assembly 200 can be evenly distributed on the entire surface of the wafer, thereby obtaining a thin film effect in which the wafer surface is completely reduced to copper.

[0076] It is worth emphasizing that in the above-mentioned several embodiments provided by the present invention, only active gas passes through the process end where the spray assembly 200 is located, and no deposition gas. However, the above-mentioned embodiments do not limit the gas distribution method of the spray assembly 200 to be applied to other film deposition equipment and other structural equipment that requires uniform gas distribution.

[0077] In summary, the present invention provides a spray assembly, a spray chamber, and a process equipment for semiconductor devices, which can improve the uniformity of the active gas before it reaches the wafer surface, and can also effectively reduce the deactivation rate of the active gas before it reaches the wafer surface, thereby improving the reduction effect of the metal oxide film on the wafer surface.

[0078] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A spray assembly, characterized in that: include: A first gas distribution part is located on the spray plate, so that the active gas introduced from the upper air inlet end can diffuse toward the periphery through the first gas distribution part; A second gas guide portion, located on the spray plate and distributed around the first gas distributor, receives the active gas diffused through the primary diffusion and diffuses it for a secondary diffusion, so that the active gas is evenly distributed on the surface of the spray plate; and The spray plate is provided with a plurality of spray holes to uniformly pass the active gas into the reaction chamber below.

2. The spray assembly according to claim 1, characterized in that: Surfaces of the first air dividing portion and the second air guiding portion are covered with a ceramic coating.

3. The spray assembly according to claim 2, characterized in that: The surface of the spray plate is covered with the ceramic coating or the spray plate is made of quartz.

4. The spray assembly according to claim 1 or 2, characterized in that: The first gas distribution part is a gas distribution cone structure, and the active gas flows along the cone surface of the gas distribution cone structure toward the edge thereof to perform the primary diffusion toward the periphery.

5. The spray assembly according to claim 4, characterized in that: The interior of the gas separation cone structure includes an air guide channel, the air inlet of the air guide channel is located on the cone surface, and the air outlet of the air guide channel is located at the bottom of the gas separation cone structure, so that the active gas flows to the bottom of the gas separation cone structure.

6. The spray assembly according to claim 5, characterized in that: The air guide channel includes two air outlets, wherein the first air outlet is located at the inner circle of the bottom of the air dividing cone structure, and the second air outlet is located at the outer circle of the bottom of the air dividing cone structure, so that the active gas is evenly distributed in the entire area of ​​the bottom of the air dividing cone structure.

7. The spray assembly according to claim 6, characterized in that: The interior of the gas dividing cone structure includes a first gas guiding channel and a second gas guiding channel, wherein the intersection of the centerline angle of the first gas guiding channel is below the bottom plane of the gas dividing cone structure, so that the active gas flows out from the inner circle of the bottom of the gas dividing cone structure, and the intersection of the centerline angle of the second gas guiding channel is above the bottom plane of the gas dividing cone structure, so that the active gas flows out from the outer circle of the bottom of the gas dividing cone structure.

8. The spray assembly according to claim 7, characterized in that: The airflow distribution of the active gas on the surface of the spray plate depends on the centerline angle of the first gas guide channel and / or the second conductor channel, wherein the centerline angle of the first gas guide channel is increased to increase the active gas flowing to the central area of ​​the spray plate, and the centerline angle of the second gas guide channel is increased to increase the active gas flowing to the edge area of ​​the spray plate.

9. The spray assembly according to claim 4, characterized in that: The second air guide portion is an air guide fan structure, and the fan surface inclination angle of the air guide fan structure is parallel to the extension of the cone surface of the air dividing cone structure.

10. A spray chamber, characterized in that: include: The cavity has a quartz lining on its inner surface, and an air inlet is provided on the top of the cavity for introducing active gas; as well as The spray assembly according to any one of claims 1 to 9 is arranged inside the cavity and is used to evenly pass the active gas into the reaction chamber below.

11. A process equipment for a semiconductor device, characterized in that: include: A reaction chamber, inside which a wafer with a surface covered with a metal oxide film is placed; as well as The spray chamber as described in claim 10 is arranged above the reaction chamber, and active gas is uniformly introduced into the reaction chamber to reduce the metal oxide film on the surface of the wafer.

Images