Rapid testing device for photoconductive antenna chip and testing method thereof

Abstract

The invention relates to the technical field of photoconductive antenna chip testing, and provides a photoconductive antenna chip rapid testing device and a testing method thereof.The photoconductive antenna chip rapid testing device comprises a light source, a first testing light path, a second testing light path, a coupling triggering module, a to-be-tested module, a data acquisition module and a data processing module; two light sources with repetition frequency difference are combined with a laser scanning galvanometer and a laser lens to excite an emission chip and a detection chip which are installed in an attached mode respectively, bias voltage is applied to the emission chip, the emission chip generates terahertz waves under the combined action of laser and the bias voltage, the terahertz waves are radiated to the detection chip, and the detection chip detects the terahertz waves. The detection chip generates an electric signal, the chip quality is judged by detecting and analyzing the electric signal, assembly line rapid testing of the chip is achieved, and the testing efficiency of the chip is remarkably improved.

Description

Technical Field

[0001] The invention relates to the technical field of photoconductive antenna chip testing, and provides a photoconductive antenna chip rapid testing device and a testing method thereof. Background Art

[0002] In the field of terahertz technology, light-excited photoconductive antennas are indispensable key components of terahertz spectroscopic analysis instruments, and can be used to measure parameters and analyze characteristics of materials in the terahertz band. However, since the preparation of antenna chips is still a cutting-edge technology, the relevant crystal growth and chip processing technology is not yet mature, and the quality of chips produced in different batches or even in the same batch varies. Users are not clear whether the purchased chips are good. Therefore, in the actual production and use process, it is necessary to first build a system to test the performance of the photoconductive antenna chip. The terahertz photoconductive antenna chips currently produced lack special rapid detection methods and are usually delivered directly to users. During use, users directly build complex debugging devices for testing. The testing process is slow, and once there is a problem with the chip, it needs to be re-debugged, which is time-consuming and labor-intensive, and extremely inefficient.

[0003] Specific devices such as Figure 1 As shown, laser excitation of the emission chip and the detection chip is achieved through beam splitting by a single laser, and the scanning test of the terahertz signal is achieved through a traditional optical delay device. The alignment of the excitation laser and the chip is achieved by mounting the laser lens on a multi-dimensional displacement table for adjustment, and the alignment of the terahertz beam between the emission chip and the detection chip is achieved by mounting a hemispherical lens and a terahertz lens on a multi-dimensional displacement table for adjustment. During the specific debugging, first, at the laser excitation end, the photoconductive antenna chip and the excitation laser need to be aligned and debugged. During the debugging process, a traditional optical delay device is usually used to achieve scanning. Due to the limited scanning range of the optical delay device, it is necessary to first precisely adjust the emission and detection laser optical paths to achieve the optical path of coherent detection, and then perform mechanical delay scanning near the coherence peak. This method requires adjustment of the optical path. At the same time, the speed of mechanical delay scanning is slow and long-term scanning debugging will cause wear of the delay line. After replacement, the optical path needs to be readjusted. Secondly, at the terahertz radiation and terahertz detection end, it is necessary to further debug the focusing and collimation of the terahertz beam through a super hemispherical lens, a terahertz lens, etc. to achieve the test of the terahertz signal. The slow scanning speed of the optical delay device means that the adjustment of each dimension cannot be performed in real time. In addition, there are many dimensions that need to be adjusted, so this method takes a lot of time. After completing the debugging of a group of chips, the next pair of chips need to be tested again. Complex optical path adjustments need to be made. Once the performance of the chip is too poor or the chip is damaged, the above work will be wasted, and the efficiency is extremely low. Summary of the invention

[0004] In order to solve the problems existing in the prior art, the present invention provides a photoconductive antenna chip rapid testing device, comprising:

[0005] A light source, wherein the light source emits a laser M and a laser S having locked repetition frequencies, wherein the laser M and the laser S have a repetition frequency difference;

[0006] A first test optical path includes a first coupler, a first laser scanning galvanometer and a first laser lens, wherein the first coupler splits and distributes laser M, the laser M is split into laser M1 and laser M2, the laser M1 is output to the first laser scanning galvanometer, the first laser scanning galvanometer controls the deflection of the laser beam, and the first laser lens focuses the laser;

[0007] The second test optical path includes a second coupler, a second laser scanning galvanometer and a second laser lens, the second coupler splits and distributes the laser S, the laser S is split into laser S1 and laser S2, the laser S1 is output to the second laser scanning galvanometer, the second laser scanning galvanometer controls the deflection of the laser beam, and the second laser lens focuses the laser;

[0008] A coupling trigger module includes a third coupler and a trigger module, wherein the third coupler is a beam-coupling coupler, the laser M2 and the laser S2 are output to the third coupler as a beam-coupling laser, and the trigger module collects the beam-coupling laser that produces a coherent effect to generate a trigger signal;

[0009] The module to be tested includes a mounting frame, a bias voltage module, and a transmitting chip and a detecting chip mounted in the mounting frame, wherein the bias voltage module applies a bias voltage to the transmitting chip, the laser M1 excites the transmitting chip to generate a terahertz wave, and the laser S1 excites the detecting chip and generates an electrical signal under the radiation of the terahertz wave;

[0010] A data acquisition module, which receives the trigger signal and the electrical signal of the detection chip;

[0011] A data processing module processes the test results.

[0012] Specifically, the module to be tested is arranged on a conveying device, and through holes are arranged on the mounting sides of the transmitting chip and the detecting chip in the mounting frame and on the bottom of the conveyor belt, and the laser passes through the through holes and is focused on the chip to be tested.

[0013] Specifically, a transmitting chip electrode seat and a detecting chip electrode seat are provided in the mounting frame, the transmitting chip electrode seat is electrically connected to the bias voltage module, and the detecting chip electrode seat is communicatively connected to the data acquisition module.

[0014] Specifically, the emission chip electrode seat and the detection chip electrode seat are movably arranged, and the electrical input position of the bias voltage and the electrical output position of the detection chip to the data acquisition module can be periodically moved along with the detection process through a transmission device.

[0015] Specifically, the transmitting chip and the detecting chip are arranged close to each other, with a spacing of 1 mm to 5 mm between them. An etalon device is arranged between the transmitting chip and the detecting chip to evaluate the quality of the tested terahertz signal.

[0016] Specifically, the data acquisition module includes two channels, namely a trigger signal channel and an electrical signal acquisition channel. The trigger signal channel acquires the trigger signal generated by the trigger module to control the starting position of the data acquisition module, and the electrical signal acquisition channel acquires multiple reflected pulse signals obtained from the electrical signal of the detection chip.

[0017] Specifically, the data processing module transforms multiple reflected pulses of the terahertz signal in the time domain into continuous sinusoidal pulses in the frequency domain through Fourier transform, and determines the signal quality of the terahertz pulse by counting the number of sinusoidal cycles measured in the frequency domain.

[0018] The present invention also provides a method for quickly testing a photoconductive antenna chip, comprising:

[0019] S1: emit two beams with a repetition frequency difference △f to the module to be tested mounted on the transmission device. R The laser M and the laser S, the laser M is split into the laser M1 and the laser M2, and the laser S is split into the laser S1 and the laser S2;

[0020] S2: The parallel laser beams M2 and S2 form a periodic spike signal due to coherence, activating the trigger module to generate a trigger signal, which triggers the acquisition module to collect electrical signals;

[0021] S3: Laser M1 and laser S1 are rapidly scanned and excited by the laser scanning galvanometer after being deflected by the laser scanning galvanometer and focused by the laser lens. At the same time, a bias voltage is applied to the transmitting chip. The transmitting chip emits a terahertz signal, which is reflected multiple times in the time domain by the standard device. The detection chip generates an electrical signal under the radiation of the terahertz wave and outputs it to the data acquisition module.

[0022] S4: The trigger signal channel in the data acquisition module acquires the trigger signal generated by the trigger module to control the starting position of the data acquisition module, and the electrical signal acquisition channel acquires multiple reflection pulse signals obtained from the electrical signal of the detection chip;

[0023] S5: The data processing module processes the multiple reflected pulse signals, converts them into continuous sinusoidal pulses in the frequency domain through Fourier transformation, counts the number of sinusoidal cycles measured in the frequency domain, and determines whether the chip quality in the module to be tested is qualified by judging whether the number of sinusoidal cycles is greater than the expected number;

[0024] S6: The conveying device moves the next module to be tested to the test point and repeats the above steps;

[0025] S7: Record and screen the modules to be tested that have not passed the test, take out the transmitting chips and detecting chips that have not passed the test, and combine the transmitting chips and detecting chips that have not passed the test with the transmitting chips and detecting chips that have passed the test and retest to identify the problem chips.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] (1) The present invention provides a photoconductive antenna chip assembly line rapid testing device, which uses two light sources with locked repetition frequencies in combination with a laser scanning galvanometer and a laser lens to respectively excite a transmitter chip and a detection chip installed closely together, and applies a bias voltage to the transmitter chip. The transmitter chip generates terahertz waves under the combined action of the laser and the bias voltage. The terahertz waves are radiated onto the detection chip, causing the detection chip to generate electrical signals. The chip quality is judged by detecting and analyzing the electrical signals.

[0028] (2) The test frequency of the present invention is the repetition frequency difference between the two laser beams, which can reach tens of kilohertz. The chip test can be completed in a short time. The test time only takes a few seconds. It can avoid the complicated debugging process and realize the pipelined rapid testing of the chip, which significantly improves the chip testing efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a schematic diagram of a chip testing device in the prior art;

[0030] Figure 2 It is a schematic diagram of the test structure of the present invention;

[0031] Figure 3 This is a schematic diagram of the module structure to be tested.

[0032] Figure numerals: 1. light source; 2. first coupler; 3. second coupler; 4. third coupler; 5. trigger module; 6. first laser scanning galvanometer; 7. second laser scanning galvanometer; 8. first laser lens; 9. second laser lens; 10. module to be tested; 11. data acquisition module; 12. bias voltage module; 13. data processing module; 14. transmission device; 15. mounting frame; 16. transmitting chip; 17. detection chip; 18. standard device; 19. transmitting chip electrode seat; 20. detection chip electrode seat. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. The specific implementation of the present invention is described in detail below in combination with specific embodiments.

[0034] like Figure 2 and Figure 3 As shown, the present invention provides a photoconductive antenna chip rapid testing device, comprising a light source 1, a first test optical path, a second test optical path, a coupling trigger module, a module to be tested 10, a data acquisition module 11 and a data processing module 13. An emitting chip 16 and a detecting chip 17 are arranged in the module to be tested 10. The first test optical path and the bias voltage excite the emitting chip 16 to generate a terahertz wave, and the second test optical path and the terahertz wave excite the detecting chip 17 to generate an electrical signal. The emitting chip 16 and the detecting chip 17 are rapidly tested by detecting the electrical signal.

[0035] The light source 1 can be a single light source 1 or two independent light sources 1, preferably a repetitive frequency locked double femtosecond laser, which can emit two laser beams: laser M and laser S. The repetition frequency of the two laser beams is stably controlled by the internal device of the double femtosecond laser, and there is a repetition frequency difference △f between the two laser beams. R The repetition frequency difference is the scanning frequency of the two lasers, which can usually reach tens of kilohertz and can replace the traditional mechanical delay device to achieve fast scanning sampling.

[0036] Laser M and laser S enter the first test optical path and the second test optical path respectively. The first test optical path includes the first coupler 2, the first laser scanning galvanometer 6 and the first laser lens 8, and the second test optical path includes the second coupler 3, the second laser scanning galvanometer 7 and the second laser lens 9. The first coupler 2 and the second coupler 3 are beam splitting couplers, which split a laser beam into two beams. The first coupler 2 and the second coupler 3 split and distribute the laser M and the laser S respectively. The first coupler 2 splits the laser M into laser M1 and laser M2, and the second coupler 3 splits the laser S into laser S1 and laser S2. The laser M1 and the laser S1 are output to the first laser scanning galvanometer 6 and the second laser scanning galvanometer 7 respectively, and the laser M2 and the laser S2 are output to the coupling trigger module for beam merging.

[0037] The laser scanning galvanometer is composed of a pair of laser scanning galvanometers, which can realize rapid scanning of the laser in a certain area and control the deflection of the laser. The first laser lens 8 and the second laser lens 9 are used to focus the laser. The first laser scanning galvanometer 6 folds the laser M1, and focuses the laser M1 onto the emission chip 16 through the first laser lens 8 to excite the emission chip 16; the second laser scanning galvanometer 7 folds the laser S1, and focuses the laser S1 onto the detection chip 17 through the second laser lens 9 to excite the detection chip 17. The traditional debugging method uses a multi-dimensional displacement device to debug the laser lens and chip position, and then combines the position debugging of the hemispherical lens and the terahertz lens at the back end to achieve the optimization of the terahertz signal. During the debugging process, each position change requires the traditional optical delay device to continuously move and scan the terahertz signal. The laser scanning galvanometer makes the laser spot move point by point within a certain area of ​​the chip, replacing the debugging process of the multi-dimensional displacement device. Each parameter test during the movement of the laser spot can be quickly achieved through repetition frequency locked double femtosecond laser sampling. The sampling frequency is the repetition frequency difference between the two laser beams, which can reach tens of kilohertz. The chip test can be completed in a short time, and the test time only takes a few seconds. It can avoid the complicated debugging process and realize the assembly line rapid testing of the chip.

[0038] A coupling trigger module is provided between the first test optical path and the second test optical path, and the coupling trigger module includes a third coupler 4 and a trigger module 5. The third coupler 4 is a beam-combining coupler. The laser M2 and the laser S2 split by the first coupler 2 are injected into the third coupler 4 to combine the lasers and inject them into the trigger module 5. Since there is a repetition frequency difference △f between the laser M2 and the laser S2 R After the two laser beams are combined, a periodic peak signal is formed due to the coherent effect. A signal acquisition threshold is set in the data acquisition module 11. When the peak signal exceeds the signal acquisition threshold, the data acquisition module 11 starts to collect data. The data acquisition module 11 is connected to the trigger module 5 for communication. The trigger signal is output to a channel of the data acquisition module 11, triggering the acquisition module to start collecting.

[0039] The module to be tested 10 includes a mounting frame 15, in which a transmitting chip 16 and a detecting chip 17 are arranged. The transmitting side of the transmitting chip 16 and the detecting side of the detecting chip 17 are arranged close to each other. The transmitting chip 16 and the detecting chip 17 are spaced 1mm-5mm apart and fixed by a mounting fixture. An etalon device 18 is arranged between the transmitting chip 16 and the detecting chip 17. The etalon device 18 can be a thin silicon wafer, which is a high-resistance silicon wafer with a thickness ranging from 0.2mm to 0.5mm and good surface flatness and parallelism. When the terahertz signal passes through the thin silicon wafer, it will be affected by the thickness, refractive index and absorption coefficient of the silicon wafer, so that the terahertz signal will have multiple reflected pulses in the time domain, which is used to evaluate the quality of the tested terahertz signal.

[0040] The module to be tested 10 is arranged on a conveying device 14, which can be a conveyor belt, etc. Test points are arranged in the conveying device 14. A first laser scanning galvanometer 6 and a first laser lens 8 are arranged on the side where the transmitting chip 16 is located, and a second laser scanning galvanometer 7 and a second laser lens 9 are arranged on the side where the detection chip 17 is located. The module to be tested 10 passes through the test points in turn to test whether the transmitting chip 16 and the detection chip 17 are qualified.

[0041] Through holes are provided on the mounting side of the transmitting chip 16 and the detecting chip 17 in the mounting frame 15 and on the bottom of the conveyor belt, and the laser passes through the through holes and is focused on the chip to be tested. The laser M1 and the laser S1 are moved point by point by the turning of the laser scanning galvanometer. After the test is completed, the conveying device 14 moves the next pair of photoconductive antenna chips to the measurement position and starts the next test, thus realizing the assembly line test of the photoconductive antenna chips.

[0042] An emission chip electrode holder 19 and a detection chip electrode holder 20 are provided in the mounting frame 15 . The emission chip electrode holder 19 is electrically connected to the bias voltage module 12 and can output a bias voltage to the emission chip 16 . The detection chip electrode holder 20 is communicatively connected to the data acquisition module 11 and transmits the electrical signal collected by the detection chip 17 .

[0043] The transmitting chip 16 generates a terahertz wave that radiates outward in a divergent manner under the combined action of the laser M1 and the bias voltage. Installing an etalon device 18 between the transmitting and detecting parts will cause the terahertz signal to have multiple reflected pulses in the time domain. The laser S1 excites the detecting chip 17, and the detecting chip 17 generates an electrical signal under the radiation of the terahertz wave and outputs it to the data acquisition module 11.

[0044] The emission chip electrode holder 19 and the detection chip electrode holder 20 are movably arranged, and retractable electrodes may be selected. The electrical input position of the bias voltage and the electrical output position from the detection chip 17 to the data acquisition module 11 may be periodically changed with the detection process through a transmission device.

[0045] The traditional testing method is to use a multi-dimensional displacement device to debug the hemispherical lens and the terahertz lens for beam transformation, so that most of the energy is incident on the terahertz detection chip 17. In this patent, the terahertz emission chip 16 and the detection chip 17 are directly installed close to each other, so that the terahertz wave can still be received by the detection chip 17 when it just diverges in space, which can significantly reduce the loss of terahertz energy and save the complicated debugging process of devices such as the hemispherical lens and the terahertz lens at the terahertz radiation end.

[0046] The data acquisition module 11 includes two channels, namely a trigger signal channel and an electrical signal acquisition channel. The trigger signal channel acquires the trigger signal generated by the trigger module 5 to control the starting position of the data acquisition module 11. The electrical signal acquisition channel acquires multiple reflected pulse signals obtained by the electrical signal of the detection chip 17. Independent data acquisition avoids the data processing module 13 from being stuck due to too much data during the acquisition process.

[0047] The data acquisition module 11 is connected in communication with the data processing module 13, and the data processing module 13 is used to control the test process and process the test results. The data processing module 13 transforms the multiple reflected pulses of the terahertz signal in the time domain into continuous sinusoidal pulses in the frequency domain through Fourier transformation. Since the thickness of the standard tool is fixed, the period length of the sinusoidal pulse in the frequency domain is also fixed. The number of sinusoidal periods measured in the frequency domain is counted and compared with the expected number of sinusoidal periods that should be measured in the preset minimum qualified frequency domain range. By judging whether the number of sinusoidal periods is greater than the expected number, the signal quality of the terahertz pulse is judged. If the number of sinusoidal periods measured in the tested frequency domain is not greater than the expected number, that is, at least one of the tested transmitting chip 16 and the detection chip 17 is a defective part, the possibly unqualified transmitting chip 16 and the detection chip 17 are taken out respectively, and they are respectively assembled with the determined good chips and retested to determine which chip has a problem.

[0048] Placing the photoconductive antenna chips in pairs on the conveying device 14 can realize assembly line testing of the photoconductive antenna chips. This technical solution only takes a few seconds to complete the test of a pair of photoconductive antenna chips, which can greatly improve the chip testing efficiency and yield rate.

[0049] The test method of the photoconductive antenna chip is:

[0050] S1: emit two beams with a repetition frequency difference △f to the module to be tested 10 mounted on the transmission device 14 at the position to be tested R The laser M and the laser S are separated, the laser M is split into the laser M1 and the laser M2, and the laser S is split into the laser S1 and the laser S2.

[0051] S2: The parallel laser beams M2 and S2 form a periodic spike signal due to coherence, activating the trigger module 5 to generate a trigger signal, and the trigger signal triggers the acquisition module to collect electrical signals.

[0052] S3: Laser M1 and laser S1 are rapidly scanned and excited the chip after being deflected by the laser scanning galvanometer and focused by the laser lens. At the same time, a bias voltage is applied to the transmitting chip 16. The transmitting chip 16 emits a terahertz signal, and multiple reflected pulses appear in the time domain through the standard device 18. The detection chip 17 generates an electrical signal under the radiation of the terahertz wave and outputs it to the data acquisition module 11.

[0053] S4: The trigger signal channel in the data acquisition module 11 acquires the trigger signal generated by the trigger module 5 to control the starting position of the data acquisition module 11 , and the electrical signal acquisition channel acquires multiple reflection pulse signals obtained from the electrical signal of the detection chip 17 .

[0054] S5: The data processing module 13 processes the multiple reflected pulse signals, converts them into continuous sinusoidal pulses in the frequency domain through Fourier transformation, counts the number of sinusoidal cycles measured in the frequency domain, and determines whether the chip quality in the module to be tested 10 is qualified by judging whether the number of sinusoidal cycles is greater than the expected number.

[0055] S6: The conveying device 14 moves the next module to be tested 10 to the test point, and repeats the above steps.

[0056] S7: Record and screen the modules 10 to be tested that have not passed the test, take out the transmitting chips 16 and the detecting chips 17 that have not passed the test, and combine the transmitting chips 16 and the detecting chips 17 that have not passed the test with the transmitting chips 16 and the detecting chips 17 that have passed the test and retest to identify the problematic chips.

[0057] The above is only a preferred embodiment of the present invention, and does not limit the present invention in other forms. Any technician familiar with the profession may use the above disclosed technical content to change or modify it into an equivalent embodiment with equivalent changes. However, any simple modification, equivalent change and modification made to the above embodiment according to the technical essence of the present invention without departing from the technical solution of the present invention still belongs to the protection scope of the technical solution of the present invention.

Claims

1. A photoconductive antenna chip rapid testing device, characterized in that: include: A light source (1), the light source (1) emitting a laser M and a laser S having locked repetition frequencies, wherein there is a repetition frequency difference between the laser M and the laser S; A first test optical path comprises a first coupler (2), a first laser scanning galvanometer (6) and a first laser lens (8), wherein the first coupler (2) splits and distributes laser light M, wherein the laser light M is split into laser light M1 and laser light M2, wherein the laser light M1 is output to the first laser scanning galvanometer (6), wherein the first laser scanning galvanometer (6) controls the deflection of the laser light beam, and the first laser lens (8) focuses the laser light; A second test optical path comprises a second coupler (3), a second laser scanning galvanometer (7) and a second laser lens (9), wherein the second coupler (3) splits and distributes laser light S, wherein the laser light S is split into laser light S1 and laser light S2, wherein the laser light S1 is output to the second laser scanning galvanometer (7), wherein the second laser scanning galvanometer (7) controls the deflection of the laser light beam, and the second laser lens (9) focuses the laser light; A coupling trigger module, comprising a third coupler (4) and a trigger module (5), wherein the third coupler (4) is a beam-combining coupler, the laser M2 and the laser S2 are output to the third coupler (4) to form a beam-combined laser, and the trigger module (5) collects the beam-combined laser that produces a coherent effect to generate a trigger signal; The module to be tested (10) comprises a mounting frame (15), a bias voltage module (12), and a transmitting chip (16) and a detecting chip (17) mounted in the mounting frame (15), wherein the bias voltage module (12) applies a bias voltage to the transmitting chip (16), the laser M1 excites the transmitting chip (16) to generate a terahertz wave, and the laser S1 excites the detecting chip (17) to generate an electrical signal under the radiation of the terahertz wave; A data acquisition module (11), the data acquisition module (11) receiving a trigger signal and an electrical signal from a detection chip (17); A data processing module (13), wherein the data processing module (13) processes the test results.

2. The photoconductive antenna chip rapid testing device according to claim 1, characterized in that: The module to be tested (10) is arranged on a conveying device (14), and through holes are arranged on the mounting side of the transmitting chip (16) and the detecting chip (17) in the mounting frame (15) and on the bottom of the conveyor belt, through which laser light passes through the through holes and is focused onto the chip to be tested.

3. The photoconductive antenna chip rapid testing device according to claim 1, characterized in that: An emission chip electrode seat (19) and a detection chip electrode seat (20) are provided in the mounting frame (15); the emission chip electrode seat (19) is electrically connected to the bias voltage module (12), and the detection chip electrode seat (20) is communicatively connected to the data acquisition module (11).

4. The photoconductive antenna chip rapid testing device according to claim 3, characterized in that: The emission chip electrode seat (19) and the detection chip electrode seat (20) are movably arranged, and the electrical input position of the bias voltage and the electrical output position of the detection chip (17) to the data acquisition module (11) can be periodically moved via a transmission device as the detection progresses.

5. The photoconductive antenna chip rapid testing device according to claim 1, characterized in that: The transmitting chip (16) and the detecting chip (17) are arranged close to each other, with a spacing of 1 mm to 5 mm between the transmitting chip (16) and the detecting chip (17), and an etalon device (18) is arranged between the transmitting chip (16) and the detecting chip (17) for evaluating the quality of the tested terahertz signal.

6. The photoconductive antenna chip rapid testing device according to claim 5, characterized in that: The data acquisition module (11) comprises two channels, namely a trigger signal channel and an electrical signal acquisition channel. The trigger signal channel acquires a trigger signal generated by the trigger module (5) to control the starting position of acquisition by the data acquisition module (11), and the electrical signal acquisition channel acquires multiple reflection pulse signals obtained from the electrical signal of the detection chip (17).

7. The photoconductive antenna chip rapid testing device according to claim 5, characterized in that: The data processing module (13) transforms multiple reflected pulses of the terahertz signal in the time domain into continuous sinusoidal pulses in the frequency domain through Fourier transform, counts the number of sinusoidal cycles measured in the frequency domain, and determines the signal quality of the terahertz pulse.

8. A method for rapid testing of a photoconductive antenna chip, characterized in that: include: S1: emitting two beams with a repetition frequency difference △f to the module to be tested (10) mounted on the transmission device (14) at the position to be tested. R The laser M and the laser S, the laser M is split into the laser M1 and the laser M2, and the laser S is split into the laser S1 and the laser S2; S2: The combined laser beams M2 and S2 form a periodic spike signal due to coherence, activating the trigger module (5) to generate a trigger signal, which triggers the acquisition module to acquire the electrical signal; S3: The lasers M1 and S1 are deflected by the laser scanning galvanometer and focused by the laser lens to quickly scan and excite the chip, and a bias voltage is applied to the transmitting chip (16). The transmitting chip (16) emits a terahertz signal, and multiple reflected pulses appear in the time domain through the standard device (18). The detection chip (17) generates an electrical signal under the radiation of the terahertz wave and outputs it to the data acquisition module (11); S4: the trigger signal channel in the data acquisition module (11) acquires the trigger signal generated by the trigger module (5) to control the starting position of the data acquisition module (11) acquisition, and the electrical signal acquisition channel acquires multiple reflection pulse signals obtained from the electrical signal of the detection chip (17); S5: the data processing module (13) processes the multiple reflected pulse signals, converts them into continuous sinusoidal pulses in the frequency domain through Fourier transformation, counts the number of sinusoidal cycles measured in the frequency domain, and determines whether the chip quality in the module to be tested (10) is qualified by judging whether the number of sinusoidal cycles is greater than the expected number; S6: the conveying device (14) moves the next module to be tested (10) to the test point, and repeats the above steps; S7: Record and select the modules to be tested (10) that have not passed the test, remove the transmitting chips (16) and the detecting chips (17) that have not passed the test, and combine the transmitting chips (16) and the detecting chips (17) that have not passed the test with the transmitting chips (16) and the detecting chips (17) that have passed the test, respectively, and retest to identify the problematic chips.

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