Magnetic sensor device

Abstract

The invention provides a magnetic sensor device having a high degree of freedom in design of a wiring layer and stable output characteristics. A magnetic sensor device (1) is provided with a plurality of magnetic detection element arrays (30) formed on a first layer (L1), and a wiring layer (4) formed on a second layer (L2) different from the first layer (L1) and electrically connected to the plurality of magnetic detection element arrays (30). The plurality of magnetic detection element arrays (30) include a first magnetic detection element array (31) and a second magnetic detection element array (32), the first magnetic detection element array (31) and the second magnetic detection element array (32) are each configured from the same number of magnetic detection elements (E), and the number of the magnetic detection elements (E) is greater than the number of the magnetic detection elements (E) in the normal direction (Z) from the second layer (L2) toward the first layer (L1). The number of magnetic detection elements (E ') of the first magnetic detection element array (31) overlapping the outline (O4) of the wiring layer (4) is substantially the same as the number of magnetic detection elements (E') of the second magnetic detection element array (32) overlapping the outline (O4) of the wiring layer (4).

Description

Technical Field

[0001] The present disclosure relates to magnetic sensor devices. Background Art

[0002] The magnetic sensor device has a magnetic detection element made of magnetic material. When an external force is applied to the magnetic material, the response to the magnetic field changes due to the inverse magnetostrictive effect. In particular, the tunnel magnetoresistance effect element has excellent output characteristics with a large MR ratio, but on the other hand, the output characteristics are easily changed by external forces.

[0003] There are also devices in which the magnetic detection element and the outside are connected not by a flexible bonding wire but by an inflexible wiring layer. In such a magnetic sensor device, the thermal stress of the wiring layer that expands or contracts due to temperature changes may act on the magnetic detection element. In Patent Document 1, in order to solve the problem that when the semiconductor device is heated, the stress of the wiring layer due to the thermal deformation of the wiring layer is generated and reaches the sensor element, a semiconductor device is disclosed in which the wiring portion is arranged at a position that does not overlap with the sensor element in the thickness direction of the semiconductor chip.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2005-277034 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, in the semiconductor device of Patent Document 1, since the wiring portion must be routed to a position that does not overlap with the sensor element in the thickness direction of the semiconductor chip, the layout of the wiring portion is greatly restricted.

[0009] The present disclosure has been developed in view of such circumstances, and an object of the present disclosure is to provide a magnetic sensor device having a high degree of freedom in designing a wiring layer and having stable output characteristics.

[0010] Technical solutions to solve problems

[0011] One embodiment of the present disclosure provides a magnetic sensor device, which includes: a plurality of magnetic detection element arrays formed on a first layer; and a wiring layer formed on a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays. The plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, the first magnetic detection element array and the second magnetic detection element array are respectively composed of the same number of magnetic detection elements, and in the normal direction from the second layer toward the first layer, the number of magnetic detection elements of the first magnetic detection element array overlapping with the outline of the wiring layer and the number of magnetic detection elements of the second magnetic detection element array overlapping with the outline of the wiring layer are substantially the same.

[0012] Another embodiment of the present disclosure provides a magnetic sensor device, which includes: a plurality of magnetic detection element arrays formed on a first layer, a wiring layer formed on a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays; and a dummy pattern formed on the second layer and not electrically connected to the plurality of magnetic detection element arrays. The plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, the first magnetic detection element array and the second magnetic detection element array are respectively composed of the same number of magnetic detection elements, and in the normal direction from the second layer toward the first layer, the number of magnetic detection elements of the first magnetic detection element array overlapping with the outline of the wiring layer and the number of magnetic detection elements of the second magnetic detection element array overlapping with the outline of the dummy pattern are approximately the same.

[0013] The position overlapping with the outline of the wiring layer or the virtual pattern in the normal direction is susceptible to the thermal stress from the wiring layer or the virtual pattern. According to these methods, the number of magnetic detection elements overlapping with the outline of the wiring layer or the virtual pattern is approximately the same in the first magnetic detection element array and the second magnetic detection element array, so the influence of the thermal stress on the first magnetic detection element array and the influence of the thermal stress on the second magnetic detection element array are balanced. The resistance ratio, etc. is not easy to change between the first magnetic detection element array and the second magnetic detection element array, so a magnetic sensor with stable output characteristics can be provided. Because the wiring layer can be configured in a manner overlapping with the first magnetic detection element array and / or the second magnetic detection element array, the design freedom of the wiring layer can be increased compared to the case where all magnetic detection element arrays must be bypassed.

[0014] In the above aspect, the first magnetic detection element array and the second magnetic detection element array may be connected in series with the output port interposed therebetween so as to constitute a part of the bridge circuit.

[0015] When the resistance of the first magnetic detection element array and the second magnetic detection element array constituting the parallel circuit of the bridge circuit changes as described later, the output characteristics of the magnetic sensor device become unstable. According to this method, the influence of the thermal stress on the first magnetic detection element array and the influence of the thermal stress on the second magnetic detection element array are balanced, and the balance condition of the bridge circuit is not easy to change, so the output characteristics of the magnetic sensor device can be stabilized.

[0016] In the above aspect, in the normal direction, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the wiring layer may be equal in area or unequal in area.

[0017] In the above aspect, in the normal direction, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the dummy pattern may be equal in area or unequal in area.

[0018] The influence of thermal stress on the first magnetic detection element array and the second magnetic detection element array does not depend on the area or shape overlapping with the wiring layer or the virtual pattern, but depends on the number of magnetic detection elements overlapping with the outline of the wiring layer or the virtual pattern. According to these methods, the wiring layer can be symmetrically arranged on the first magnetic detection element array and the second magnetic detection element array, so that the area where the first magnetic detection element array and the second magnetic detection element array overlap with the wiring layer or the virtual pattern becomes equal area. It is also possible to asymmetrically arrange the wiring layer on the first magnetic detection element array and the second magnetic detection element array, so that the area where the first magnetic detection element array and the second magnetic detection element array overlap with the wiring layer or the virtual pattern becomes unequal area. The design freedom of the wiring layer can be further improved.

[0019] In the above method, the angle sensor may include a magnetic sensor device, the magnetic compass may include a magnetic sensor device, the current sensor may include a magnetic sensor device, or the autofocus mechanism and / or optical shake correction mechanism of the camera module may include a magnetic sensor device.

[0020] According to these aspects, the magnetic sensor device can be used for various purposes.

[0021] Effects of the Invention

[0022] According to the present disclosure, it is possible to provide a magnetic sensor device having a high degree of freedom in designing a wiring layer and having stable output characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a perspective view showing a magnetic sensor device according to one embodiment.

[0024] Figure 2 It is schematically indicated Figure 1 A cross-sectional view of an example of the internal structure of the magnetic sensor device shown.

[0025] Figure 3 Yes Description Figure 1 A perspective view of the manufacturing process of the magnetic sensor device shown.

[0026] Figure 4 This is a diagram showing an example of a magnetic sensor device configured as an angle sensor.

[0027] Figure 5 This is a plan view showing an example of a magnetic sensor device configured as a magnetic compass.

[0028] Figure 6 FIG. 1 is a diagram showing an example of a magnetic sensor device used as a part of a current sensor.

[0029] Figure 7 Yes means Figure 6 The circuit structure of the current sensor is shown in the figure.

[0030] Figure 8 This is a perspective view showing an example of a magnetic sensor device used as a part of an autofocus mechanism and an optical shake correction mechanism of a camera module.

[0031] Fig. 9 Yes means Figure 8 A cross-sectional view of the internal structure of a camera module is shown.

[0032] Fig.10 This is a top view of the simulated model viewed from the normal direction.

[0033] Fig.11 This is a cross-sectional view of the simulated model observed along the XY plane that is orthogonal to the normal direction.

[0034] Fig.12 It means in Fig.10 and Fig.11 Plot of the simulated angular error for each position shown.

[0035] Fig.13 This is a plan view showing a first example in which the influence of thermal stress is balanced among magnetic detection element arrays.

[0036] Fig.14 This is a plan view showing a second example in which the influence of thermal stress is balanced among magnetic detection element arrays.

[0037] Fig.15 This is a plan view showing a third example in which the influence of thermal stress is balanced among magnetic detection element arrays.

[0038] Fig.16This is a plan view showing a fourth example in which the influence of thermal stress is balanced among magnetic detection element arrays.

[0039] Fig.17 This is a plan view showing a fifth example in which the influence of thermal stress is balanced among magnetic detection element arrays.

[0040] Fig.18 It means that in order to Figure 13 to Figure 17 By contrast, a top view shows an example in which the influence of thermal stress is uneven among magnetic detection element arrays. DETAILED DESCRIPTION

[0041] Preferred embodiments will be described with reference to the accompanying drawings. In the drawings, components with the same reference numerals have the same or similar structures. Figure 1 1 is a perspective view showing a magnetic sensor device 1 according to an embodiment. In the example shown in the figure, the magnetic sensor device 1 includes a support substrate 2, a sensor chip 3, a wiring layer 4, a sealing resin 5, an electrode 6, etc. One magnetic sensor device 1 may include a plurality of sensor chips 3.

[0042] like Figure 1 As shown in FIG. 1 , the support substrate 2 is formed in a flat plate shape having a first surface 2A and a second surface 2B on the side opposite to the first surface 2A. In the following description, the thickness direction of the support substrate 2 is referred to as a normal direction Z or an up-down direction Z, the direction from the second surface 2B toward the first surface 2A is referred to as an up direction, and the direction from the first surface 2A toward the second surface 2B is referred to as a down direction. The first surface 2A extends parallel to an XY plane orthogonal to the normal direction Z.

[0043] Figure 2 It is schematically indicated Figure 1 1 is a cross-sectional view of an example of the internal structure of the magnetic sensor device 1 shown in FIG. In the example shown in the figure, the support substrate 2 is an ASIC (Application Specific Integrated Circuit), and the electrode 2E electrically connected to the wiring layer 4 is provided on the first surface 2A. The support substrate 2 is not limited to an ASIC, and may also be a silicon substrate or a sapphire substrate. It may also be a relay substrate (interposer) on which only wiring without an integrated circuit is formed on these substrates.

[0044] The sensor chip 3 is fixed to the first surface 2A of the support substrate 2 by using an adhesive or the like. Figure 2 As shown, the sensor chip 3 includes a sensor substrate 10 , a plurality of magnetic detection element arrays 30 provided on the sensor substrate 10 , a protective film 20 surrounding each magnetic detection element array 30 , and the like.

[0045] The sensor substrate 10 is, for example, a silicon substrate, and is disposed between the first surface 2A of the support substrate 2 and the protective film 20. The structure of the magnetic sensor device 1 is not limited to the example shown in the figure, and may be a monolithic structure in which the sensor substrate 10 is omitted and the support substrate 2 and the magnetic detection element array 30 are integrated by photolithography. The protective film 20 may be an inorganic film with silicon dioxide (silicon dioxide SiO2) as the main component, or a laminated film of an inorganic film with silicon dioxide as the main component and an inorganic film with aluminum oxide (aluminum oxide Al2O3) as the main component.

[0046] Each magnetic detection element array 30 is composed of a plurality of magnetic detection elements E ( Fig.13 An example of the magnetic detection element E is a TMR (tunnel magnetoresistance effect) element. The magnetic detection element E is not limited to a TMR element, and may be a GMR (giant magnetoresistance effect) element, an AMR (anisotropic magnetoresistance effect) element, a Hall element, or other types of magnetic detection elements. Compared with other types of MR elements, the TMR element has a small bonding area, which can miniaturize the sensor chip 3, and a large MR ratio, which can increase the output of the sensor chip 3. Therefore, it is particularly suitable for the magnetic detection element E.

[0047] The magnetic detection element array 30 is arranged on the first surface 2A side of the support substrate 2 and is formed on the first layer L1 on the first surface 2A side of the support substrate 2. The wiring layer 4 is arranged on the first surface 2A side of the support substrate 2 and is formed on the second layer L2 different from the first layer L1. Similar to the wiring layer 4, the dummy pattern 4D ( Fig.14 As shown) is also formed in the second layer L2.

[0048] The second layer L2 is not particularly limited as long as it is a layer different from the first layer L1, and may be a plurality of layers. For example, the second layer L2 may be the first resin layer 51 ( Figure 3 The upper surface of the second resin layer 52 ( Figure 3 The second layer L2 is located at a position farther from the support substrate 2 than the first layer L1. The direction from the first layer L1 toward the second layer L2 is consistent with the normal direction Z mentioned above.

[0049] The wiring layer 4 extends parallel to the first surface 2A of the support substrate 2 and electrically connects the electrode 2E of the support substrate 2 and the electrode 3E provided on the upper surface 3A of the sensor chip 3 via a plurality of via holes 40 extending in the normal direction Z. The wiring layer 4 is arranged to partially overlap the sensor substrate 10 in the normal direction Z.

[0050] The sealing resin 5 is disposed on the first surface 2A side of the support substrate 2, and covers the sensor chip 3 and the wiring layer 4. The sealing resin 5 is formed by a plurality of resin layers 51, 52, 53 ( Figure 3 The wiring layer 4 and the dummy pattern 4D ( Fig.14 The electrode 6 is, for example, a solder ball or a copper column, electrically connected to the wiring layer 4, and exposed from the sealing resin 5.

[0051] Figure 3 Yes Description Figure 1 The manufacturing process of the magnetic sensor device 1 is shown in FIG. Figure 3 As shown in (A), the sensor chip 3 is fixed to the first surface 2A of the support substrate 2 by using an adhesive or the like. Figure 3 As shown in FIG. 2B , a resin layer (first resin layer) 51 is formed to cover the sensor chip 3 and the first surface 2A of the support substrate 2, and electrodes 2E and 3E ( Fig.10 The position opening of the via hole 40 (shown) is used for Figure 2 Through hole 40P as shown).

[0052] like Figure 3 As shown in (C), a seed layer is formed by sputtering or the like, and via holes 40 and first wiring layer 41 are formed by plating. These processes may be either subtractive or additive. Figure 3 As shown in (D), a resin layer (second resin layer) 52 is formed to cover the via hole 40, the first wiring layer 41, and the resin layer 51, and a through hole 40P for the via hole 40 is opened.

[0053] like Figure 3 As shown in (E), by Figure 3 (C) The via hole 40 and the second wiring layer 42 are formed by the same process. Figure 3 As shown in (F), a resin layer (third resin layer) 53 is formed to cover the via hole 40, the second wiring layer 42, and the resin layer 52, and a through hole 6P for the electrode 6 is opened. Figure 3 As shown in (G), solder or the like is filled into the through hole 6P to form the electrode 6. Figure 3 By electrically connecting the support substrate 2 and the sensor chip 3 prepared separately in the order shown in (A) to (G), it is possible to obtain Figure 1The magnetic sensor device 1 is shown.

[0054] Figure 4 1 is a diagram showing an example of a magnetic sensor device 1 configured as an angle sensor that generates a detection value corresponding to the angle of a detection object. In the example shown in the figure, the magnetic sensor device 1 is configured as an angle sensor that detects the angle of a magnet 300 that can rotate about the central axis O of a cylinder as a rotation axis. In the example shown in the figure, the X direction, the Y direction, and the Z direction are orthogonal to each other, and the central axis O is parallel to the Z direction.

[0055] The magnetic sensor device 1 detects a first component of the magnetic field generated by the magnet 300, that is, a magnetic field component MF applied to the magnetic sensor device 1, in a direction parallel to the X direction, and generates a first detection signal indicating the intensity of the first component, and detects a second component of the magnetic field generated by the magnet 300 in a direction parallel to the Y direction, and generates a second detection signal indicating the intensity of the second component. The processor (not shown) calculates the angle θ formed by the magnetic field generated by the magnet 300 and the reference direction DR by calculating the arc tangent of the ratio of the first detection signal to the second detection signal.

[0056] Figure 5 FIG. 1 is a diagram showing an example of a magnetic sensor device 1 configured as a magnetic compass for generating a detection value corresponding to an angle of the earth's magnetism. Figure 5 As shown, the magnetic sensor device 1 includes three sensor chips 3 (first to third sensor chips 3X, 3Y, and 3Z), and the first to third sensor chips 3X, 3Y, and 3Z are configured to detect components of the external magnetic field in three directions orthogonal to each other.

[0057] Figure 6 1 is a diagram showing an example of a magnetic sensor device 1 used as a part of a current sensor 400 for generating a detection value corresponding to a current value of a detection object. In the example shown in the figure, the current sensor 400 is configured to detect the value of the current Itg flowing through the bus 410. A magnetic field MF is generated around the bus 410 by the current Itg. The current sensor 400 is arranged at a position where the magnetic field MF is applied and near the bus 410.

[0058] Figure 7 Yes means Figure 6 FIG. 4 is a diagram showing a circuit structure of a current sensor 400 shown in FIG. 4 . In the example shown in the figure, the current sensor 400 is configured as a magnetic balance current sensor. The current sensor 400 includes a coil 420 in addition to the magnetic sensor device 1. The coil 420 is used to generate a second magnetic field MF2 that cancels out the first magnetic field MF1 of the magnetic field MF. The magnetic sensor device 1 detects a residual magnetic field between the first magnetic field MF1 and the second magnetic field MF2, and generates a magnetic field detection value S corresponding to the strength of the magnetic field.

[0059] The current sensor 400 also includes a feedback circuit 430, a current detector 440, and the like. The feedback circuit 430 flows a feedback current for generating a second magnetic field MF2 to the coil 420 based on the magnetic field detection value S. The current detector 440 detects the value of the feedback current flowing through the coil 420. The current detector 440 is, for example, a resistor inserted into the current path of the feedback current. In this case, the potential difference between the two ends of the resistor is equivalent to the detection value of the feedback current. The detection value of the feedback current is in a proportional relationship with the value of the current Itg of the bus 410, and therefore, the value of the current Itg can be detected based on the detection value of the feedback current.

[0060] The magnetic sensor device 1 disclosed in the present invention can be used as a magnetic compass mounted on electronic equipment such as information equipment to detect geomagnetism, can also be used as a part of the autofocus mechanism and optical shake correction mechanism of a camera module, can also be used as an angle sensor for detecting the angle formed by the magnetic field generated by a magnet and a reference direction, and can also be used as a part of a current sensor for detecting the value of the current flowing through a busbar.

[0061] Figure 8 1 is a perspective view showing an example of the magnetic sensor device 1 used as a part of the autofocus mechanism and the optical shake correction mechanism of the camera module 200 . Fig. 9 Yes means Figure 8 2 is a cross-sectional view of the internal structure of the camera module 200. The autofocus mechanism and the optical shake correction mechanism of the camera module 200 include a drive device 230 for moving the lens 220, and the drive device 230 is controlled based on the position information of the lens 220 detected by the plurality of magnetic sensor devices 1.

[0062] When describing in detail, the autofocus mechanism detects the state of focusing on the subject using an image sensor or an autofocus sensor, and moves the lens in the Z direction relative to the image sensor. The optical shake correction mechanism detects shake using a gyro sensor, and moves the lens in the U direction and / or V direction relative to the image sensor.

[0063] Figure 8 The camera module 200 shown includes an image sensor 210 such as a CMOS, a lens 220 aligned with the image sensor 210, a first holding component 241 movable in the U direction and the V direction relative to the image sensor 210, a second holding component 242 movable in the Z direction relative to the first holding component 241, a plurality of elastically deformable wires 244 supporting the first holding component 241 and the second holding component 242, a driving device 230 for moving the first holding component 241 and the second holding component 242, a frame 250 for housing these, and the like.

[0064] The autofocus mechanism and optical shake correction mechanism of the camera module 200 include a drive device 230 and a plurality of magnetic sensor devices 1, a processor for controlling the drive device 230, an autofocus sensor for detecting a state where a subject is in focus, a gyro sensor for detecting shake, etc. The processor, autofocus sensor, gyro sensor, etc., which are not shown, are arranged outside the housing.

[0065] The lens 220 is fixed inside the second holding member 242 formed in a cylindrical shape. The second holding member 242 is accommodated in the first holding member 241 formed in a box shape together with the lens 220. At least one second magnet 243 is fixed to the second holding member 242 so that at least one magnetic sensor device 1 detects the position information of the second holding member 242.

[0066] The driving device 230 includes a plurality of first coils 231, a plurality of second coils 232, a plurality of first magnets 233, etc. The plurality of first coils 231 are fixed to the frame 250. The plurality of second coils 232 are fixed to the second holding member 242. The plurality of first magnets 233 are fixed to the first holding member 241. Each of the plurality of first coils 231 is opposite to the corresponding first magnet 233. Each of the plurality of second coils 232 is opposite to the corresponding first magnet 233.

[0067] In the case of the autofocus mechanism, when a current flows to any second coil 232 according to an instruction from the processor, the second holding member 242 fixed to the second coil 232 moves in the Z direction due to the interaction between the magnetic field generated by the first magnet 233 and the magnetic field generated by the second coil 232. At least one magnetic sensor device 1 generates a detection signal based on a synthetic magnetic field synthesized by the magnetic field generated by at least one second magnet 243 fixed to the second holding member 242 and the magnetic field generated by the first magnet 233 fixed to the first holding member 241, and sends it to the processor. The processor detects the position information of the lens 220 in the Z direction based on the detection signal, and controls the drive device 230 so that the subject is focused.

[0068] In the case of the optical shake correction mechanism, when a current flows to any first coil 231 according to an instruction from the processor, the first holding member 241 fixed to the first magnet 233 moves in the U direction and / or the V direction due to the interaction between the magnetic field generated by the first magnet 233 and the magnetic field generated by the first coil 231. Each of the plurality of magnetic sensor devices 1 generates a detection signal based on the position of the corresponding first magnet 233 and sends it to the processor. The processor detects the position information of the lens 220 in the U direction and the V direction based on the detection signal, and controls the drive device 230 in a manner to correct the shake.

[0069] Next, refer to Figures 10 to 18 The magnetic sensor device 1 of the present disclosure will be described in detail. Fig.10 1 is a top view of the simulated model viewed from the normal direction Z, showing positions P=0 to 14 drawn on the upper surface 3A of the sensor chip 3. Fig.10 As shown, in the X-axis direction and the Y-axis direction, the position directly below the center of the wiring layer 4 of 100 μm square is set as P=0, and the positions are moved by 10 μm in the X-axis direction and the Y-axis direction, respectively, as P=1, 2, 3, ... 14. For example, P=14 is at a position 140 μm away from P=0 in the X-axis direction and the Y-axis direction.

[0070] Fig.11 This is a cross-sectional view of the simulated model observed along the XY plane orthogonal to the normal direction Z. Fig.12 Yes means Fig.10 The position P shown in Fig.11 The diagram of the simulated angular error for each distance Q is shown, with the horizontal axis being Fig.10 The position P shown in the figure changes to 15 patterns ranging from 0 to 14, with the vertical axis as Fig.11 The eight patterns shown in which the distance Q from the upper surface 3A of the sensor chip 3 to the wiring layer 4 is changed to 1 μm, 2 μm, 3 μm, 5 μm, 8 μm, 10 μm, 15 μm, and 20 μm depict simulation results when a predetermined stress value is applied to the magnetic sensor device 1 .

[0071] like Fig.12 As shown in the figure, there is a tendency that the closer the distance Q from the upper surface 3A of the sensor chip 3 to the wiring layer 4 is, the larger the angle error is. Regardless of the distance Q, the angle error is the largest at the position P=5 and the position P=6 near the position P=6 overlapping the outline O4 of the wiring layer 4 in the normal direction Z. When the magnetic detection element array 30 is at these positions, it is easily affected by the thermal stress from the wiring layer 4.

[0072] Figure 13 to Figure 17 1 is a plan view showing an example in which the influence of thermal stress from the wiring layer 4 is balanced between the first magnetic detection element array 31 and the second magnetic detection element array 32. The magnetic sensor device 1 of the present disclosure includes a first layer L1 ( Figure 2 In the example shown in the figure, the plurality of magnetic detection element arrays 30 include first to fourth magnetic detection element arrays 31, 32, 33, and 34.

[0073] exist Figure 13 to Figure 17In the example shown, a bridge circuit is formed by two parallel circuits. The first magnetic detection element array 31 and the second magnetic detection element array 32 are connected in series with the output port A sandwiched therebetween in a manner that forms a parallel circuit of the bridge circuit, and the third magnetic detection element array 33 and the fourth magnetic detection element array 34 are connected in series with the output port B sandwiched therebetween in a manner that forms another parallel circuit of the bridge circuit. The output ports A and B are connected to the electrode 2E.

[0074] like Figure 13 to Figure 17 As shown, one of the characteristics of the magnetic sensor device 1 disclosed in the present invention is that, when viewed from above along the normal direction Z, the number of magnetic detection elements E′ overlapping with the contours O4, OD of the wiring layer 4 or the virtual pattern 4D is approximately the same in the first magnetic detection element array 31 and the second magnetic detection element array 32, so that the influence of thermal stress on the first magnetic detection element array 31 and the influence of thermal stress on the second magnetic detection element array 32 are balanced.

[0075] For example, in Figure 13 to Figure 15 In the first to third examples shown, the outline O4 of the wiring layer 4 overlaps with each of the first magnetic detection element array 31 and the second magnetic detection element array 32 in the normal direction Z. The number of magnetic detection elements E′ overlapping with the outline O4 of the wiring layer 4 is six in both the first magnetic detection element array 31 and the second magnetic detection element array 32, which is the same number.

[0076] For example, in Figure 16 to Figure 18 In the fourth and fifth examples shown, the outline O4 of the wiring layer 4 overlaps with the first magnetic detection element array 31, and the dummy pattern 4D overlaps with the second magnetic detection element array 32 in the normal direction Z. The number of magnetic detection elements E' in the first magnetic detection element array 31 overlapping with the outline O4 of the wiring layer 4 and the number of magnetic detection elements E' in the second magnetic detection element array 32 overlapping with the outline OD of the dummy pattern 4D in the normal direction Z are both eight and are the same number.

[0077] As described above, the plurality of magnetic detection element arrays 30 are respectively composed of a plurality of magnetic detection elements E arranged in a matrix. In each magnetic detection element 30, the plurality of magnetic detection elements E are connected in series. In the example shown in the figure, in each magnetic detection element 30, the plurality of magnetic detection elements E are arranged at equal intervals. The magnetic detection element array 30 and the electrode 3E are electrically connected by the wiring W formed in the first layer L1. The magnetic detection element array 30 and other magnetic detection element arrays 30 are also electrically connected by the wiring W.

[0078] In the magnetic sensor device 1 of the present disclosure, it is sufficient as long as the influence of thermal stress on the first magnetic detection element array 31 and the influence of thermal stress on the second magnetic detection element array 32 are balanced. Therefore, in the case where each of the first magnetic detection element array 31 and the second magnetic detection element array 32 includes a plurality of magnetic detection elements E, the number of magnetic detection elements E′ overlapping the contours O4 and OD of the wiring layer 4 or the dummy pattern 4D may not be the same in the first magnetic detection element array 31 and the second magnetic detection element array 32 in a strictly sense, but may have some difference. For example, in the case where the magnetic detection element array 30 includes forty magnetic detection elements E, even if there is one magnetic detection element E′ overlapping the contour O4, the influence of thermal stress is as small as 1 / 40. Therefore, in the case where each of the first magnetic detection element array 31 and the second magnetic detection element array 32 includes more than forty magnetic detection elements E, the number of magnetic detection elements E′ overlapping the contours O4 and OD may also differ to a certain extent.

[0079] As described above, the dummy pattern 4D is formed on the second layer L2 similarly to the wiring layer 4. However, unlike the wiring layer 4, the dummy pattern 4D is not electrically connected to the plurality of magnetic detection element arrays 30. In addition, the dummy pattern 4D is not electrically connected to the wiring layer 4 either.

[0080] Fig.18 It means that in order to Figure 13 to Figure 17 This is a top view of an example of a magnetic sensor device 101 in which the influence of the thermal stress of the wiring layer 4 is not balanced between the first magnetic detection element array 31 and the second magnetic detection element array 32. Fig.18 In the magnetic sensor device 101 of the comparative example shown, in the normal direction Z, the number of magnetic detection elements E′ overlapping the outline O4 of the wiring layer 104 is not substantially the same in the first magnetic detection element array 31 and the second magnetic detection element array 32 .

[0081] The first magnetic detection element array 31 overlaps the outline O4 of the wiring layer 104 with twelve magnetic detection elements E', and the second magnetic detection element array 32 overlaps the outline O4 of the wiring layer 104 with two magnetic detection elements E', which is a difference of ten. Fig.12 As described above, in the normal direction Z, the position overlapping with the outline O4 of the wiring layer 4 (wiring layer 104 ) is easily affected by the thermal stress of the redistribution wiring 4 .

[0082] In the magnetic sensor device 101 of the comparative example, there is a large difference in the number of magnetic detection elements E′ that are easily affected. Therefore, the influence of thermal stress on the first magnetic detection element array 31 and the influence of thermal stress on the second magnetic detection element array 32 are unbalanced, and the output characteristics of the magnetic detection element array 30 may deteriorate.

[0083] In contrast, Figure 13 to Figure 17 In the example of the present disclosure shown, in the normal direction Z, the number of magnetic detection elements E′ overlapping with the outlines O4, OD of the wiring layer 4 or the virtual pattern 4D is approximately the same in the first magnetic detection element array 31 and the second magnetic detection element array 32, so the influence of thermal stress on the first magnetic detection element array 31 and the influence of thermal stress on the second magnetic detection element array 32 are balanced. The resistance ratio and the like are not easy to change between the first magnetic detection element array 31 and the second magnetic detection element array 32, so the output characteristics of the magnetic detection element 30 of the magnetic sensor device 1 are stable. For example, in the case of configuring the magnetic sensor device 1 as an angle sensor, it is possible as shown in FIG. Fig.12 Reduce the angular error as shown.

[0084] As described above, the first magnetic detection element array 31 and the second magnetic detection element array 32 constitute a parallel circuit of the bridge circuit. When the resistance ratio and the like are not easily changed between the first magnetic detection element array 31 and the second magnetic detection element array 32, the balance condition of the bridge circuit is not easily changed. Therefore, the output characteristics of the magnetic sensor device 1 can be stabilized.

[0085] The first magnetic detection element array 31 and the second magnetic detection element array 32 are composed of the same number of magnetic detection elements E and are equal in area (meaning the areas are equal. The same applies to the following). In the example disclosed in the present invention, in the normal direction Z, the area of ​​the region overlapping with the wiring layer 4 or the virtual pattern 4D can be equal in area in the first magnetic detection element array 31 and the second magnetic detection element array, or can be unequal in area (meaning the areas are unequal. The same applies to the following).

[0086] For example, in Fig.13 In the first example shown, the area of ​​the region of the first magnetic detection element array 31 overlapping with the wiring layer 4 is 58% of the overall area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping with the wiring layer 4 is 58% of the overall area of ​​the second magnetic detection element array 32. In the normal direction Z, the area of ​​the region overlapping with the wiring layer 4 is equal in area to the first magnetic detection element array 31 and the second magnetic detection element array. In addition, the shape of the region of equal area has symmetry. In the example shown in the figure, the shape of the region of equal area is point symmetric. Although not shown in the figure, the shape of the region of equal area can also be line symmetric.

[0087] In contrast, Fig.14In the second example shown, the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 58% of the overall area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the wiring layer 4 is 4.5% of the overall area of ​​the second magnetic detection element array 32. In the normal direction Z, the area of ​​the region overlapping the wiring layer 4 is not equal in the first magnetic detection element array 31 and the second magnetic detection element array. However, as described above, the number of magnetic detection elements E' overlapping the outline O4 of the wiring layer 4 is the same as six in the first magnetic detection element array 31 and the second magnetic detection element array 32.

[0088] Same as the second example, Fig.15 In the third example shown, the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 58% of the entire area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the wiring layer 4 is 21% of the entire area of ​​the second magnetic detection element array 32, and the areas are not equal. However, as described above, the number of magnetic detection elements E' overlapping the outline O4 of the wiring layer 4 is six in both the first magnetic detection element array 31 and the second magnetic detection element array 32, and becomes the same number. In the third example, unlike the first and second examples, the area of ​​the second magnetic detection element array 32 overlapping the wiring layer 4 is divided into a plurality of areas.

[0089] In addition, for example, Fig.16 In the fourth example shown, the area of ​​the region of the first magnetic detection element array 31 overlapping the wiring layer 4 is 46% of the overall area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping the dummy pattern 4D is 46% of the overall area of ​​the second magnetic detection element array 32. In the normal direction Z, the area of ​​the region overlapping the wiring layer 4 or the dummy pattern 4D is equal in area to the first magnetic detection element array 31 and the second magnetic detection element array. As in the first example described above, the shapes of the regions of equal area are symmetrical.

[0090] In contrast, Fig.17In the fifth example shown, the area of ​​the region of the first magnetic detection element array 31 overlapping with the wiring layer 4 is 46% of the overall area of ​​the first magnetic detection element array 31, and the area of ​​the region of the second magnetic detection element array 32 overlapping with the dummy pattern 4D is 60% of the overall area of ​​the second magnetic detection element array 32. In the normal direction Z, the area of ​​the region overlapping with the wiring layer 4 or the dummy pattern 4D is not equal in the first magnetic detection element array 31 and the second magnetic detection element array. However, as described above, the number of magnetic detection elements E' overlapping with the contours O4 and OD of the wiring layer 4 or the dummy pattern 4D is eight in both the first magnetic detection element array 31 and the second magnetic detection element array 32, which is the same number.

[0091] The above-described embodiments are intended to facilitate understanding of the present disclosure and are not intended to limit the present disclosure. The various elements and their configurations, materials, conditions, shapes, and sizes of the embodiments are not necessarily limited to the examples and may be appropriately changed. In addition, the structures shown in different embodiments may be partially replaced or combined with each other.

[0092] Description of Reference Numerals

[0093] 1…Magnetic sensor device, 2…Support substrate, 2A…First surface, 2B…Second surface, 2E…Electrode, 3…Sensor chip, 3A…Upper surface, 3E…Electrode, 3X…First sensor chip, 3Y…Second sensor chip, 3Z…Third sensor chip, 4…Wiring layer, 4D…Dummy pattern, 5…Sealing resin, 6…Electrode, 6P…Through hole, 10…Sensor substrate, 20…Protective film, 30…Magnetic detection element array, 31…First magnetic detection element array, 32…Second magnetic detection element array, 33…Third detection element array, 34…Fourth magnetic detection element array, 40…Via hole, 40P…Through hole, 41…First wiring layer, 42…Second wiring layer, 51 to 53…Resin layer, 101…Magnetic sensor device of comparative example, 104…Wiring layer of comparative example, 200…Camera module, 210…Image sensor, 220…Lens, 230…Drive device, 231…first coil, 232…second coil, 233…first magnet, 241…first holding member, 242…second holding member, 243…second magnet, 244…electric wire, 250…frame, 300…magnet, 400…current sensor, 410…busbar, 420…coil, 430…feedback circuit, 440…current detector, A, B…output port, DR…reference direction, E…magnetic detection element, E′…magnetic detection element on which the outline of the wiring layer or virtual pattern overlaps, Itg…current, L1…first layer, L2…second layer, MF…magnetic field, MF1…first magnetic field, MF2…second magnetic field, O…center axis, O4…outline of the wiring layer, OD…outline of the virtual pattern, P…position, Q…distance, S…magnetic field detection value, U, V…direction of shaking, W…wiring, X…left-right direction, Y…front-back direction, Z…normal direction, θ…angle.

Claims

1. A magnetic sensor device comprising: a plurality of magnetic detection element arrays formed on the first layer; a wiring layer formed in a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays, The plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, wherein the first magnetic detection element array and the second magnetic detection element array are respectively composed of the same number of magnetic detection elements. In the normal direction from the second layer toward the first layer, the number of magnetic detection elements of the first magnetic detection element array overlapping the outline of the wiring layer and the number of magnetic detection elements of the second magnetic detection element array overlapping the outline of the wiring layer are substantially the same.

2. A magnetic sensor device comprising: a plurality of magnetic detection element arrays formed on the first layer; a wiring layer formed in a second layer different from the first layer and electrically connected to the plurality of magnetic detection element arrays, a dummy pattern formed on the second layer and not electrically connected to the plurality of magnetic detection element arrays, The plurality of magnetic detection element arrays include a first magnetic detection element array and a second magnetic detection element array, wherein the first magnetic detection element array and the second magnetic detection element array are respectively composed of the same number of magnetic detection elements. In the normal direction from the second layer toward the first layer, the number of magnetic detection elements of the first magnetic detection element array overlapping the outline of the wiring layer and the number of magnetic detection elements of the second magnetic detection element array overlapping the outline of the dummy pattern are substantially the same.

3. The magnetic sensor device according to claim 1 or 2, wherein: The first magnetic detection element array and the second magnetic detection element array are connected in series with an output port interposed therebetween so as to constitute a part of a bridge circuit.

4. The magnetic sensor device according to claim 2, wherein: In the normal direction, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the wiring layer are equal in area.

5. The magnetic sensor device according to claim 1, wherein In the normal direction, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the wiring layer are unequal in area.

6. The magnetic sensor device according to claim 2, wherein: In the normal direction, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the dummy pattern have the same area.

7. The magnetic sensor device according to claim 2, wherein: In the normal direction, the area of ​​the first magnetic detection element array overlapping the wiring layer and the area of ​​the second magnetic detection element array overlapping the dummy pattern are not equal in area. 8 . An angle sensor comprising the magnetic sensor device according to claim 1 . 9 . A magnetic compass comprising the magnetic sensor device according to claim 1 . 10 . A current sensor comprising the magnetic sensor device according to claim 1 or 2. 11 . A camera module comprising an autofocus mechanism and / or an optical shake correction mechanism including the magnetic sensor device according to claim 1 or 2 .

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