Component carrier and method of manufacturing a component carrier

Abstract

A component carrier (100) and a method of manufacturing a component carrier (100) are described. The component carrier (100) comprises a stack (101) having at least one electrically conductive layer structure (104) and a plurality of electrically insulating layer structures (102, 112). The at least one electrically conductive layer structure (104) comprises a vertical connection structure (150) extending continuously in the vertical direction through at least two electrically insulating layer structures of the plurality of electrically insulating layer structures (102, 112).

Description

Technical Field

[0001] The invention relates to a component carrier having a stack comprising at least one electrically conductive layer structure and a plurality of electrically insulating layer structures, wherein a vertical connecting structure extends continuously through at least two of the electrically insulating layer structures and furthermore to a method for producing such a component carrier.

[0002] Therefore, the present invention may relate to the technical field of component carriers such as printed circuit boards or IC substrates. Background Art

[0003] Against the background of increasing product functionality of component carriers equipped with one or more electronic components and the increasing miniaturization of such electronic components as well as the increasing number of electronic components to be mounted on component carriers (such as printed circuit boards), increasingly powerful array-like components or packages with a plurality of electronic components are being used, which have a plurality of contacts or connections with increasingly smaller spacings between these contacts or connections. Removing the heat generated during operation by such electronic components and the component carriers themselves is becoming an increasingly serious problem. In addition, effective protection against electromagnetic interference (EMI) is also becoming an increasingly serious problem. At the same time, the component carrier should be mechanically robust and electrically and magnetically reliable in order to be able to operate even under harsh conditions.

[0004] In particular, it can be challenging to make reliable (electrical) interconnects (such as vias) in component carriers. Traditionally, through-holes extending through dielectric layers are formed by laser drilling. The through-holes are then filled with an electrically conductive material (usually copper) by a plating process. While in some applications the entire through-hole is filled, in other applications only the sidewalls are covered with an electrically conductive material (plated through-hole).

[0005] However, the conventional method may have some disadvantages. Due to the laser drilling process, the laser drilled hole is tapered (V-shaped). In order to avoid the width of the via becoming smaller and smaller along the thickness direction of the component carrier, the vertical through connection is realized by a multi-layer structure (each layer includes blind holes), wherein the blind holes of different layers are formed one on top of another.

[0006] Figure 2An example of a conventional circuit board 200 is shown, which includes a stack having a core 203 and a plurality of insulating layers 202, which are stacked on top of each other above and below the core 203. Through holes 255 extend through the core 203 and the through holes 255 are electrically connected to corresponding vertical connections at the top and bottom ends. Thus, each vertical connection includes a plurality of different blind holes 204a, 204b, which are stacked on top of each other. The structure reflects a manufacturing process in which the stack is stacked layer by layer, wherein for each insulating layer 202, a hole is drilled by laser and then filled with copper before the next layer is added.

[0007] In other words, the traditional vertical through-connection in the layer stack is made of a plurality of superimposed (and tapered) blind holes, which extend in a discontinuous manner in the vertical direction. The process requires dielectric openings and electrical interconnect layers. In order to avoid mechanical / electrical damage, bonding pads (formed by electrical interconnect layers) are applied and need to be large. However, traditional through-connections may have a negative impact on signal integrity. In addition, they may be cumbersome to manufacture and may take up a lot of space. Summary of the invention

[0008] It may be desirable to provide a component carrier having reliable and robust electrical interconnections.

[0009] A component carrier and a method for producing the same are described.

[0010] According to one aspect of the invention, a component carrier is described having a stack comprising at least one electrically conductive layer structure (eg metal layer / trace / via) and a plurality of electrically insulating layer structures (eg reinforcement resin) (layers).

[0011] The at least one electrically conductive layer structure comprises a vertical connection structure extending vertically continuously (in particular having substantially continuous vertical sidewalls) through at least two electrically insulating layers (in particular a plurality of electrically insulating layers) of the plurality of electrically insulating layer structures.

[0012] According to another aspect of the invention, a method for producing a component carrier is described, wherein the method comprises:

[0013] i) providing / forming a stack comprising at least one electrically conductive layer structure and a plurality of electrically insulating layer structures; and

[0014] ii) forming at least one electrically conductive layer structure having a vertical connection structure, which vertical connection structure extends vertically continuously through at least two electrically insulating layers of the plurality of electrically insulating layer structures.

[0015] In this article, the term "vertical connection structure" may refer to an electrically conductive structure extending (at least partially) through a component carrier stack in a vertical direction. In particular, the vertical connection structure may be configured to electrically connect two entities, such as an electronic component and a layer structure / trace / pad. Compared with the stacked blind vias (see above) of the related art, the vertical connection structure may be configured as a single via, such as a via comprising a continuous sidewall. Preferably, the vertical connection structure is formed homogeneously by a metal (e.g., copper). In an example, the vertical connection structure may be formed / filled by a conductive paste or an anisotropic conductive film, which may include, for example, micron and / or nano metal particles, an adhesive material, or at least one of another solvent. Alternatively, the vertical connection structure may be formed by a metallized sidewall in a hole, and then the hole may be filled with an electrically insulating material (e.g., a plug paste). In another example, a (bulk) metal material may be coated (e.g., by graphene). In an example, the vertical connection structure may be formed as a (copper) columnar member. In an example, the width of the vertical connection structure in the vertical direction (extending along the vertical direction) is constant. The continuous extension portion may pass through at least two (particularly multiple) of the electrically insulating layer structures. In an embodiment, the vertical connection structure is formed by plating, in particular, the vertical connection structure is formed by plating at a first position and by embedding an insulating material at a second position.

[0016] In the present document, the term "electrically conductive layer structure" may refer to any layer and / or structure that is electrically conductive (e.g. metallic) and suitable for being arranged in a component carrier stack. In an example, the electrically conductive layer may be formed (e.g. plated, laminated, printed, etc.) and then patterned. In another example, a patterned foil may be applied. The electrically conductive layer structure may include: layers, traces, pads, terminations, vias, vertical connection structures, etc.; in particular, the electrically conductive layer may include: multiple layers, multiple traces, multiple pads, multiple terminations, multiple vias, multiple vertical connection structures, etc. Several layers of electrically conductive layer structures may be stacked (in particular alternately with electrically insulating layer structures) in a component carrier layer stack. For example, in Figure 1A In FIG. 3 , three layers of electrically conductive layer structure metal traces are shown. A vertical connection structure is arranged between the three layers of electrically conductive layer structure metal traces, and the vertical connection structure can also be regarded as a part of the electrically conductive layer structure.

[0017] In this document, the term "electrically insulating layer structure" may refer to any layer and / or structure (e.g. resin, glass, ceramic) that is electrically insulating and suitable for being arranged in a component carrier stack. The electrically insulating material may be provided during the layer stacking process, e.g. by lamination or coating. For each electrically conductive layer structure, an electrically insulating layer structure may be formed. For example, Figure 1AIn the figure, several electrically insulating layer structures can be seen, two of which are located between corresponding electrically conductive layer structures (with respect to the thickness (z) direction of the stack). Therefore, the term "extending through at least two electrically insulating layer structures" may refer to the case where a vertical connection structure extends through at least two of the electrically insulating layer structures as formed during the manufacturing process. These electrically insulating layer structures may be bounded from each other, for example, by electrically conductive layer structures (particularly metal traces) formed between the two electrically insulating layer structures. The electrically insulating layer structure may (be a resin and) include a filling material, such as fibers or spheres. The filler may have several possible functions (e.g. controlling CTE, thermal conductivity, dielectric properties, DK (relative dielectric constant εr) and reinforcement). The core structure may also include an electrically insulating layer structure (particularly with additional fabric for increasing reinforcement / mechanical stability).

[0018] In the present context, the term "continuous extension" may in particular be regarded as a structural feature of a vertical connection structure, according to which the vertical connection structure extends in a continuous manner without sudden changes (discontinuous; in other words: (dimensional) discontinuity)), such as a sudden change in width along the vertical direction. This may be contrasted with a related art example (see above), in which the vertical connection is formed by a plurality of superimposed blind holes, so that there is a sudden change in width at each via junction. Due to the layered manufacturing process, conventional (laser) vias extend only through only one electrically insulating layer respectively. However, the described vertical connection structure may extend through two or more electrically insulating layer structures in a continuous manner. Preferably, the vertical connection structure may comprise a continuously extending sidewall.

[0019] In other words, the extension (e.g., diameter) of the basic form of the vertical connection structure can remain constant in height in the direction of the thickness of the stack (vertical direction), compared to a cylindrical or cuboid geometry, and there can be no tilt between the ends of the parallel displacement of the vertical connection structure. In the context of this document, the term "component carrier" can particularly refer to any support structure on which and / or in which one or more components are accommodated to provide mechanical support and / or electrical connectivity and / or thermal conductivity. In other words, the component carrier can be configured as a mechanical and / or electronic and / or thermal carrier for the component. In particular, the component carrier can be one of a printed circuit board, an organic interposer, a metal core substrate, an inorganic substrate, and an IC (integrated circuit) substrate. The component carrier can also be a hybrid board combining different component carriers of the above-mentioned types of component carriers. In the example, the component carrier includes at least one electrically conductive layer and at least one electrically insulating layer.

[0020] In this document, the term "component carrier" may refer to both the final component carrier product as well as the component carrier preform (i.e., the component carrier in production, in other words, a semi-finished product). In an example, a component carrier preform may be a panel comprising a plurality of semi-finished component carriers manufactured together. At the final stage, the panel may be divided into a plurality of final component carrier products.

[0021] In an embodiment, the component carrier "stack" comprises at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier can be a laminate of the mentioned electrically insulating layer structure and the electrically conductive layer structure, in particular, the component carrier can be formed by applying mechanical pressure and / or thermal energy. The mentioned stack can provide a plate-like component carrier, which can provide a large mounting surface for other components. In an example, the stack can still be very thin and compact. In another example, for high-density products, the stack may be very thick. The stacking direction (height / thickness) can be arranged in the vertical direction z. In addition, the stacking direction can be perpendicular to the two directions of the main extension of the (plate-like) component carrier (along x and y).

[0022] In this context, the term "layer structure" may particularly refer to a continuous or discontinuous layer (or separate islands in the same plane) of electrically conductive or insulating material. A plurality of such layers (one layer stacked parallel to another) may form a stack in the vertical direction.

[0023] According to exemplary embodiments, the invention may be based on the idea that a component carrier with a reliable and robust electrical interconnection may be provided when a vertical connection structure extends vertically continuously through at least two electrically insulating layer structures of a component carrier layer stack.

[0024] Traditionally (see Figure 2 ), the vertical connection can be realized by a plurality of overlapping laser blind holes. However, the inventors have found that the robustness and reliability of the vertical connection structure can be significantly improved when a continuous vertical extension is provided.

[0025] In this way, misalignment of stacked blind holes can be avoided, in particular, the need for large bonding pads can be overcome. Signal integrity can be improved, while smaller vias that do not require a laser drilling manufacturing process can be achieved. By forming smaller vias, the vertical connection structure can require less space in the component carrier, thereby improving miniaturization. The advantageous component carrier described can be manufactured using established component carrier technology, so that direct implementation into existing production lines can be achieved.

[0026] Additional advantages may include: padless interconnects, one-step via formation, elimination of drilling processes, tested z-connections, enabling smaller features (such as different bump pitches), improved electrical characteristics (such as less signal loss, higher signal integrity, less electric field effects), higher inter-layer accuracy, and better alignment.

[0027] Exemplary Embodiments

[0028] According to an embodiment, at least one electrically conductive layer structure comprises a vertical connection structure, which vertical connection structure extends vertically continuously through at least two electrically insulating layer structures of the plurality of said electrically insulating layer structures. This can provide the advantage that two or more vertical connection structures can establish complex (but very flexible in design) electrical connections to the component carrier and / or two or more vertical connection structures can establish complex (but very flexible in design) electrical connections within the component carrier.

[0029] In an example, the vertical connection structure and the further vertical connection structure are arranged adjacent to each other, in particular, the vertical connection structure and the further vertical connection structure are arranged to be oriented in parallel along the vertical direction. In another example, the vertical connection structure and the further vertical connection structure are arranged on top of each other (in the vertical direction), or the vertical connection structure and the further vertical connection structure are arranged directly on top of each other, or the vertical connection structure and the further vertical connection structure are arranged offset. The vertical connection structure and the further vertical connection structure can be connected or disconnected to each other. In another example, the vertical connection structure and the further vertical connection structure can have similar, in particular the same, length in the vertical direction. Additionally or alternatively, the vertical connection structure and the further vertical connection structure can have different lengths in the vertical direction.

[0030] In another embodiment, the vertical connection structure and the other vertical connection structure are electrically connected to each other, in particular, the vertical connection structure and the other vertical connection structure are electrically connected through (a part of) the electrically conductive layer structure. In another embodiment, the vertical connection structure and the other vertical connection structure are electrically connected to each other without (a part of) the electrically conductive layer structure. By electrically connecting two or more vertical connection structures, a particularly effective electrical connection can be established, for example an electrical connection in the form of a network structure (see the following description). For example, two or more of the vertical connection structures and one or more of the other vertical connection structures are electrically connected. The shape / form of the two or more vertical connection structures can be similar or different. In addition, the vertical connection structures can have similar or different widths (diameters). The shape of the vertical connection structure is not limited and can be, for example, circular, rectangular or polygonal.

[0031] In another embodiment, the vertical connection structure and the further vertical connection structure comprise different widths or similar widths, in particular, the vertical connection structure and the further vertical connection structure comprise the same width. Thus, design flexibility can be enhanced. Although the widths may be different, each vertical through-connection may extend continuously through two or more electrically insulating layer structures.

[0032] In an exemplary embodiment, the vertical connection structure comprises a diameter (width) in the range of 1 μm to 100 μm, in particular 5 μm or less. In an exemplary embodiment, the further vertical connection structure comprises a diameter (width) in the range of 1 μm to 100 μm, in particular 10 μm or less. Preferably, the diameter may be 10 μm or less.

[0033] In another embodiment, the vertical connection structure and the further vertical connection structure are offset from each other along the stack thickness direction (the stacking direction along the vertical axis z) or in a direction perpendicular to the stack thickness. Thus, the offset vertical connection structure can achieve efficient and reliable (but design flexible) electrical connections. For example, the vertical connection structures can be electrically connected by (vertical or horizontal) metal traces. In an example, the offset can be in the range between 2 μm (or even close to 0 μm) and 50 μm.

[0034] In an example, the offset between a vertical connection structure and another vertical connection structure and another offset between the same vertical connection structure and another vertical connection structure or another vertical connection structure may be similar, in particular, the offset between a vertical connection structure and another vertical connection structure and another offset between the same vertical connection structure and another vertical connection structure or another vertical connection structure may be the same. Additionally and / or alternatively, the offset between a vertical connection structure and another vertical connection structure and another offset between the same vertical connection structure and another vertical connection structure or another vertical connection structure may be different.

[0035] In another embodiment, the vertical connection structure, the further vertical connection structure and at least one further element (e.g. metal trace) of at least one electrically conductive layer structure form an electrically conductive network structure, in particular, the vertical connection structure, the further vertical connection structure and at least one further element (e.g. metal trace) of at least one electrically conductive layer structure form a bifurcated electrically conductive network structure. Thus, the advantages of the continuously extending vertical connection structure can be extended to complex electrical connection structures, in particular, the advantages of the continuously extending vertical connection structure can be directly extended to complex electrical connection structures during the manufacturing process.

[0036] In this document, the term "further element" may particularly refer to an electrically conductive structure suitable for electrically connecting two or more, in particular three or more vertical connection structures. In an example, the further element is constructed as, for example, a metal trace, a metal pad or a metal foil connecting the vertical connection structures. The further element may be part of an electrically conductive layer structure. In a preferred example, the further element may be oriented in the component carrier in such a way that the angle between the vertical connection structure and the further element is between 80° and 100°, in particular, the angle between the vertical connection structure and the further element is 90°, and the angle between the further vertical connection structure and the further element is between 80° and 100°, in particular, the angle between the further vertical connection structure and the further element is 90°.

[0037] In an embodiment, the thickness range for the via structure may be 2 to 50 μm, in particular, the thickness range for the via structure may be 15 μm or less, in particular, the thickness range for the via structure may be 10 μm or less. For metal traces, the height may be even smaller, such as 20 μm or less, in particular, the height may be 10 μm or less, more particularly, the height may be 5 μm or less.

[0038] In another embodiment, the bifurcated electrically conductive network structure comprises at least two ends located on one side and one end located on the opposite side. For example, the vertical connection structure is connected to another vertical connection structure (via another element, in particular, via another element in the horizontal direction), and one of the vertical connection structures is shorter than the other vertical connection structure (in the vertical direction). Thus, an h-shaped ( Shape or Y shape, preferably The vertical connection structure of the H-shaped or Y-shaped is a 90° angle as a bifurcated network. Using such a design, an electrical connection with two electrical connectors (e.g., pads, terminations, solder bumps) of the electronic component can be established at the lower part of the H-shaped.

[0039] In another embodiment, the bifurcated electrically conductive network structure comprises at least three ends located on one side and one (or two) ends located on the opposite side. For example, the vertical connection structure is connected to two vertical connection structures of the other vertical connection structures (via another element, in particular via another element in the horizontal direction), wherein the other vertical connection structure is shorter than the vertical connection structure (in the vertical direction). Thus, a trident shape (similar to the Greek letter ψ (psi) or the Cyrillic letter ψ (psi)) can be formed. (sch)) vertical connection structure as a bifurcated network structure. Using such a design, electrical connections can be established with two or three electrical connectors (eg pads, terminals, solder bumps) of the electronic component at the upper portion of the trident shape.

[0040] In a further embodiment, at least two of the vertical connection structure, the further vertical connection structure and the at least one further element are connected in a rectangular form (in particular comprising an angle of (approximately 90°)), in particular, at least two of the vertical connection structure, the further vertical connection structure and the at least one further element are connected in a rectangular form within the bifurcated electrically conductive network structure. This structural feature may reflect the manufacturing steps of forming the further element from the (patterned) electrically conductive layer (horizontally) and the vertical connection structure by plating (vertically). Thus, the rectangular form may be generated by the horizontal electrically conductive material form and the vertical electrically conductive material form. Thus, the electrically conductive network structure may be directly formed in an efficient manner during the manufacturing process.

[0041] In other embodiments, the vertical connection structure is formed on or above the core structure. The core structure (e.g., a fully cured (enhanced) resin, glass substrate or metal substrate) can provide a certain stability and robustness for the component carrier and the stacking process, thereby avoiding warping. The layer stacking (of the stack) can be done directly on the upper main surface and / or the lower main surface of the core structure.

[0042] In another embodiment, the vertical connection structure is electrically connected to the vertical through-connection portion, in particular, the vertical connection structure is electrically connected to a vertical through-connection portion having a substantially continuous vertical side wall extending vertically through the core structure (see for example Figure 1A ). In this example, one or more electrically conductive through-connections are formed through the core structure, which electrically conductive through-connections can be directly connected to the vertical connection structure. Thereby, an effective and robust (through-)connection within the component carrier can be provided.

[0043] The vertical through-connection may extend continuously through the core, in particular, the vertical through-connection may extend continuously through the core comprising a continuous sidewall. The vertical through-connection may be configured as a (completely) filled via, a via with a conductive sidewall (a plated through-hole), or the vertical through-connection may be filled with an electrically insulating material (surrounded by a conductive sidewall). In an example, the vertical through-connection comprises a width that is larger or smaller than the vertical connection structure. In another example, the vertical through-connection comprises a width similar to the vertical connection structure.

[0044] In other embodiments, the vertical connection structure is formed in a coreless stack (see, e.g. Figure 1B ). Such a component carrier can be formed based on a temporary carrier to provide sufficient stability during the manufacturing process. Compared to a component carrier with a core, a coreless component carrier can be thinner and more flexible.

[0045] In a further embodiment, the free end of the vertical connection structure is exposed relative to one of the stack surfaces. This may provide the advantage that a portion of the vertical connection structure is exposed to direct electrical connections, such as electronic components.

[0046] In a further embodiment, the free end is connected to a further electrically conductive layer structure (eg arranged below the vertical connection structure).Thereby, large vertical connections (in particular through each layer stack) can be realized in an efficient manner.

[0047] In a further embodiment, the vertical connection structures are connected to the horizontal (metal) traces of at least one electrically conductive layer structure. Thus, electrical interconnections with the stack can be made in a simple but reliable manner, especially during the manufacturing process. The connected vertical connection structures (e.g. pillars) can be coaxial or offset.

[0048] In a further embodiment, the (metal) traces are arranged at a vertical height between the vertical heights of opposite vertical ends of the vertical connection structures and / or the further vertical connection structures. For example, a first vertical connection structure may be formed at a first location, an electrically conductive layer structure (including traces) may be formed at a second location, and then a second vertical connection structure may be formed above a third location, such that the horizontal traces may act as interconnects. When the vertical connection structures are offset, complex (forked) shapes may be provided.

[0049] In a further embodiment, the vertical connection structure consists of at least two superimposed sub-sections, with a joint between the at least two superimposed sub-sections, in particular, wherein the joint, in particular the surface of the joint, is at the same vertical height as the joint between two adjacent electrically insulating layer structures. Although the above-mentioned horizontal traces themselves are electrically conductive elements, the joint can be more accurately regarded as the surface between the vertical connection structures. Thereby, a smooth joint can be formed, for example without changing the width.

[0050] In a further embodiment, the lateral misalignment between sub-portions extending vertically continuously (preferably extending perpendicularly relative to the center line) is such that the center line of each sub-portion is located inside a virtual circle having a diameter in the range of 2 μm to 10 μm, in particular, the diameter is not greater than 5 μm.

[0051] In the context of this document, the term "centerline" may describe an imaginary line extending through the center of a base area / region (e.g., a circle) at one end of a vertical connecting structure and the center of another base area at the opposite other end of the same vertical connecting structure.

[0052] In a further embodiment, the lateral step between adjacent subsections of the connecting structure extending continuously in the vertical direction is lower than 2 μm, in particular, the lateral step between adjacent subsections of the connecting structure extending continuously in the vertical direction is lower than 1 μm. The lateral step may reflect lateral misalignment during the manufacturing process. However, since the lateral step is so small, the disadvantage of misalignment can be effectively overcome.

[0053] Thus, high quality vertical connections with very little misalignment may be provided, ultimately improving performance.

[0054] In another embodiment, the vertical connection structure is made of a homogeneous material, in particular, the vertical connection structure is made of a plated metal, more particularly, the vertical connection structure is made of plated copper. The (signal) integrity and / or stability of the vertical connection structure can be enhanced by the homogeneous material. In addition, the manufacturing can be simple and efficient. For example, the vertical connection structure can be constructed as a continuous copper column.

[0055] In another embodiment, the vertical connection structure is made of a heterogeneous material (e.g., conductive paste and / or anisotropic conductive film). Using this material, it may have a simple manufacturing process and good cost-effectiveness because it may only require roller coating or laminator direct molding. Especially for some cases, such as when the core is an inorganic material, the traditional plating process may not be able to form the structure in a desired manner, so the material may be preferred.

[0056] In a further embodiment, one or more metal structures, in particular metal traces, for example from the electrically conductive layer structure, are located (in the vertical direction) below the further element of the network structure and / or above the further element. Additionally or alternatively, one or more metal structures, in particular metal traces, for example from the third electrically conductive layer structure, are located (horizontally) between the vertical connection structure of the bifurcated electrically conductive network structure and the further vertical connection structure.

[0057] The main surface of the metal structure may face the side of the vertical connection structure and / or the branched electrically conductive network structure. In this document, the term "main surface" may refer to an external (exposed) surface along (parallel to) the direction of the main extension (e.g., along the x, y plane) and perpendicular to the thickness direction of the stack (along z).

[0058] In a further embodiment, the bifurcated structure bifurcates along one of its axes, but it may also bifurcate, for example, in orthogonal directions. In a further embodiment, the bifurcated structure comprises two connections in the form of a cross. In a further embodiment, the bifurcated structure comprises six or more connections (e.g., a star).

[0059] In further embodiments, the section / portion inside the component carrier (layer stack) may be free of tapered (standard laser via) electrically conductive connections. And thus the section / portion inside the component carrier (layer stack) potentially comprises a higher (signal) integrity.

[0060] In a further embodiment, the component carrier comprises at least one (electronic; active or passive) component. The component may be mounted on the component carrier and / or embedded in the component carrier. In addition, the component may be electrically connected to at least one vertical connection structure. In particular, one or more components are connected to the free end of the bifurcated electrically conductive network structure. Thus, the electrical connections of the components (and / or the free ends of the network structure) may comprise different distances from each other (e.g. different bump pitches). Thus, an effective and reliable electrical connection, in particular a complex electrical connection with high design flexibility, may be provided.

[0061] In a further embodiment, at least two electrically insulating layer structures (in particular a plurality of electrically insulating layer structures) are in direct contact with at least two side walls (parts) (in particular four side walls (parts)) of the vertical connection structure and / or the further vertical connection structure. This structure can reflect the manufacturing process and can ensure high product integrity.

[0062] In a further embodiment, at least a portion of the sidewalls of the vertical connection structure and / or the further vertical connection structure has a surface roughness (in particular a surface roughness parameter Ra) of less than 10 μm (in particular less than 5 μm). In a specific example, Ra may be less than 800 nm, for example in the range of 500 nm to 800 nm (for example for high performance computing). This may bring the following advantages: the vertical connection structure and / or the further vertical connection structure is configured to transmit electromagnetic signals, in particular, to transmit signals for HF applications.

[0063] In a further embodiment, the method further comprises: wherein forming the vertical connection junction further comprises: plating the vertical connection structure, in particular, plating the vertical connection structure on and / or in the core structure or the temporary carrier. Thus, established component carrier manufacturing techniques can be directly applied. Instead of forming the via by filling the hole, the described vertical connection structure can be formed by plating on a supporting structure such as a core or a carrier.

[0064] In a further embodiment, the method further comprises: embedding (particularly by lamination) the at least one electrically conductive layer structure, in particular, at least partially embedding the vertical connection structure into the at least one electrically insulating layer structure, in particular, wherein the embedding is performed after forming the vertical connection structure by plating. Such a stacking process can be opposite to conventional processes (in which holes are formed in an insulating material and then filled with metal) and can be continuously extended in the vertical direction, in particular with high design flexibility in terms of complex corner / network interconnections.

[0065] In a further embodiment, the vertical connection structure at least partially protrudes into the core structure (see e.g. Figure 1A ). Such structural features may reflect a manufacturing process comprising a two-step process of removing material of the core structure and filling the openings with an electrically conductive material (e.g. drilling and (copper) plating). Thereby, stability / robustness may be enhanced.

[0066] In an embodiment, the component carrier is configured as one of the group consisting of a printed circuit board, a substrate (in particular an IC substrate) and an interposer.

[0067] In an embodiment, the component carrier is formed as a plate. This contributes to a compact design in which the component carrier still provides a large base for mounting components on the component carrier. Furthermore, in particular, a bare chip as an example of an embedded electronic component can be easily embedded in a thin plate, such as a printed circuit board, due to the small thickness of the bare chip.

[0068] In an embodiment, the component carrier stack comprises at least one electrically insulating layer structure and at least one electrically conductive layer structure. For example, the component carrier may be a laminate of the mentioned electrically insulating layer structure and the electrically conductive layer structure, in particular, the component carrier may be formed by applying mechanical pressure and / or thermal energy. The mentioned stack may provide a plate-like component carrier that is able to provide a large mounting surface for further components and yet is very thin and compact.

[0069] In the context of the present application, the term "printed circuit board" (PCB) may particularly denote a plate-like component carrier formed by laminating a plurality of electrically conductive layer structures with a plurality of electrically insulating layer structures, for example by applying pressure and / or by supplying thermal energy. As a preferred material for PCB technology, the electrically conductive layer structures are made of copper, while the electrically insulating layer structures may include resin and / or glass fibers, so-called prepregs, or FR4 materials. The various electrically conductive layer structures may be connected to each other in a desired manner by forming holes through the laminate, for example by laser drilling or mechanical drilling, and partially or completely filling these holes with electrically conductive material, in particular copper, to form vias or any other through-hole connections. The filled holes connect the entire stack (i.e., through-hole connections extending through multiple layers or the entire stack), or the filled holes connect at least two electrically conductive layers, so-called vias. Similarly, optical interconnects may be formed through the various layers of the stack to accommodate an electro-optical circuit board (EOCB). In addition to one or more components that can be embedded in the printed circuit board, the printed circuit board is generally configured to accommodate one or more components on one surface or two opposite surfaces of the plate-shaped printed circuit board. The one or more components can be connected to the corresponding main surface by welding. The dielectric portion of the PCB may include a resin with reinforcing fibers (such as glass fibers).

[0070] In the context of the present application, the term "substrate" can be particularly represented as a small component carrier. Relative to a PCB, a substrate can be a relatively small component carrier on which one or more components can be mounted and which can be used as a connection medium between one or more chips and another PCB. For example, a substrate can have approximately the same size as a component (particularly an electronic component) to be mounted on the substrate (for example, in the case of a chip-scale package (CSP)). In another embodiment, the substrate can be substantially larger than a specified component (for example, in a flip chip ball grid array, FCBGA configuration). More specifically, a substrate can be understood as such a carrier: a carrier for electrical connection or electrical network, and a component carrier for a connector that is equivalent to a printed circuit board (PCB) but has a relatively high density of lateral and / or vertical arrangements. A lateral connector is, for example, a conductive path, and a vertical connector can be, for example, a drill hole. These lateral and / or vertical connectors are arranged in a substrate and can be used to provide electrical, thermal and / or mechanical connections between a housed component or an unhoused component (for example, a bare wafer), particularly an IC chip and a printed circuit board or an intermediate printed circuit board. Therefore, the term “substrate” also includes “IC substrate.” The dielectric portion of the substrate may include a resin with reinforcement particles, such as reinforcement spheres, in particular glass spheres.

[0071] The substrate or interposer may include or be composed of a layer of at least one of the following: glass, silicon (Si) and / or a photosensitive or dry-etchable organic material, such as an epoxy-based stack material (e.g., an epoxy-based stack film); or a polymer compound (the polymer compound may or may not include photosensitive and / or heat-sensitive molecules), such as polyimide, or polybenzoxazole.

[0072] In an embodiment, the at least one electrically insulating layer structure comprises at least one of the following: a resin or a polymer, such as an epoxy resin, a cyanate resin, a benzocyclobutene resin, a bismaleimide-triazine resin, a polyphenylene derivative (e.g., based on polyphenylene ether (PPE), polyimide (PI), polyamide (PA), liquid crystal polymer (LCP), polytetrafluoroethylene (PTFE) and / or a combination thereof. It is also possible to use, for example, a reinforcing structure made of glass (multilayer glass) - such as a mesh, fiber, spherical pieces or other kinds of filler particles - to form a composite. A semi-cured resin combined with a reinforcing agent, for example, with the above-mentioned resin The impregnated fibers are called prepregs. These prepregs are usually named after their properties, such as FR4 or FR5, which describe their flame retardant properties. Although prepregs, especially FR4, are usually preferred for rigid PCBs, other materials, especially epoxy-based stacking materials (e.g., stacking films) or photosensitive dielectric materials may also be used. For high-frequency applications, high-frequency materials, such as polytetrafluoroethylene, liquid crystal polymers and / or cyanate resins may be preferred. In addition to these polymers, low-temperature co-fired ceramics (LTCC) or other low, very low or ultra-low Dk materials may be used as electrical insulating structures in component carriers.

[0073] In an embodiment, the at least one electrically conductive layer structure comprises at least one of the following: at least one of copper, aluminum, nickel, silver, gold, palladium, tungsten, magnesium, carbon, (particularly doped) silicon, titanium and platinum. Although copper is generally preferred, other materials or coated variants thereof, in particular variants coated with superconducting materials or conductive polymers, such as graphene or poly (3,4-ethylenedioxythiophene) (PEDOT), respectively, are also possible.

[0074] At least one further component may be embedded in the stack and / or surface mounted on the stack. The component and / or at least one further component may be selected from at least one of the following: a non-conductive inlay, a conductive inlay (such as a metal inlay, preferably comprising copper or aluminum), a heat transfer unit (e.g. a heat pipe), a light-conducting element (e.g. an optical waveguide or optical conductor connector), an electronic component or a combination thereof. The inlay may be, for example, a metal block with or without a coating of insulating material (IMS-inlay), which may be embedded or surface mounted for the purpose of promoting heat dissipation. Suitable materials are defined according to the thermal conductivity of the material, which should be at least 2 W / mK. Such materials are typically based on, but not limited to, metals, metal oxides and / or ceramics, such as copper, aluminum oxide (Al2O3) or aluminum nitride (AlN). Other geometries with increased surface areas are also often used in order to increase the heat exchange capacity. Furthermore, the component may be an active electronic component (having at least one realized pn junction), a passive electronic component (e.g., a resistor, an inductor, or a capacitor), an electronic chip, a memory device (e.g., a DRAM or other data storage), a filter, an integrated circuit (e.g., a field programmable gate array (FPGA), a programmable array logic (PAL), a general purpose array logic (GAL), and a complex programmable logic device (CPLD)), a signal processing component, a power management component (e.g., a field effect transistor (FET), a metal oxide semiconductor field effect transistor (MOSFET), a complementary metal oxide semiconductor (CMOS), a junction field effect transistor (JFET), or an insulated gate In some embodiments, the present invention relates to a semiconductor material, such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), gallium oxide (Ga2O3), indium gallium arsenide (InGaAs), indium phosphide and / or any other suitable inorganic compound), optoelectronic interface elements, light emitting diodes, optocouplers, voltage converters (such as DC / DC converters or AC / DC converters), cryptographic components, transmitters and / or receivers, electromechanical transducers, sensors, actuators, microelectromechanical systems (MEMS), microprocessors, capacitors, resistors, inductors, batteries, switches, cameras, antennas, logic chips, and energy harvesting units. However, other components can be embedded in the component carrier. For example, a magnetic element can be used as a component. Such a magnetic element can be a permanent magnetic element (such as a ferromagnetic element, an antiferromagnetic element, a multiferroic element or a ferrimagnetic element, such as a ferrite core) or can be a paramagnetic element. However, the component can also be an IC substrate, an interposer or other component carrier, such as a board-in-board configuration. The component can be surface mounted on the component carrier and / or can be embedded in the interior of the component carrier.In addition, other components, in particular those that generate and emit electromagnetic radiation and / or are sensitive to electromagnetic radiation propagating from the environment, can also be used as components.

[0075] In an embodiment, the component carrier is a laminated component carrier. In such an embodiment, the component carrier is a composite of multiple layers that are stacked and connected together by applying pressure and / or heat.

[0076] After the internal layer structure of the component carrier has been processed, one or both main surfaces of the processed layer structure can be covered symmetrically or asymmetrically with one or more further electrically insulating layer structures and / or electrically conductive layer structures (in particular, by lamination). In other words, the stacking can be continued until the desired number of layers is obtained.

[0077] After the formation of the stack having the electrically insulating layer structure and the electrically conductive layer structure has been completed, the resulting layer structure or component carrier can be subjected to a surface treatment.

[0078] In particular, in terms of surface treatment, an electrically insulating solder mask may be applied to one or both of the opposite main surfaces of a layer stack or component carrier. For example, such a solder mask may be formed over the entire main surface and the layer of the solder mask may be subsequently patterned to expose one or more electrically conductive surface portions that will be used to electrically couple the component carrier to an electronic peripheral. The surface portions of the component carrier that remain covered with the solder mask, in particular the surface portions containing copper, may be effectively protected from oxidation or corrosion.

[0079] In terms of surface treatment, a surface treatment portion can also be selectively applied to the exposed electrically conductive surface portion of the component carrier. Such a surface treatment portion can be an electrically conductive covering material on the exposed electrically conductive layer structure (such as a pad, a conductive trace, etc., especially including or consisting of copper) on the surface of the component carrier. If such an exposed electrically conductive layer structure is not protected, the exposed electrically conductive component carrier material (especially copper) will be oxidized, thereby making the reliability of the component carrier low. The surface treatment portion can then be formed as, for example, a joint between a surface mounted component and a component carrier. The surface treatment portion has the function of protecting the exposed electrically conductive layer structure (especially the copper circuit), and the surface treatment portion can be joined to one or more components, for example by welding. Examples of suitable materials for the surface treatment portion are organic solderability preservatives (OSP), electroless nickel immersion gold (ENIG), electroless nickel immersion palladium immersion gold (ENIPIG), chemical nickel plating chemical palladium immersion gold (ENEPIG), gold (especially hard gold), chemical tin (chemical and electroplating), nickel gold, nickel palladium, etc. Nickel-free surface finishes are also available, especially for high-speed applications. Examples are ISIG (Immersion Silver-Immersion Gold) and EPAG (Electroless Palladium-Autocatalytic Gold). BRIEF DESCRIPTION OF THE DRAWINGS

[0080] The aspects defined above and further aspects of the invention are apparent from the examples of embodiment described hereinafter and are explained with reference to these examples of embodiment.

[0081] Figure 1A and Figure 1B A component carrier according to an exemplary embodiment of the invention is respectively shown.

[0082] Figure 2 A conventional circuit board is shown.

[0083] FIG. 3A to FIG. 3K A first method of producing a component carrier according to an exemplary embodiment of the invention is shown.

[0084] Figures 4A to 4K A second method for producing a component carrier according to an exemplary embodiment of the invention is shown.

[0085] FIG. 5A to FIG. 5K A third method for producing a component carrier according to an exemplary embodiment of the invention is shown. DETAILED DESCRIPTION

[0086] Figure 1A and Figure 1B A component carrier 100 according to an exemplary embodiment of the invention is respectively shown.

[0087] Figure 1A : The component carrier 100 comprises a stack 101 having a plurality of electrically conductive layer structures 104 and a plurality of electrically insulating layer structures 102. At least one electrically conductive layer structure 104 comprises a plurality of vertical connection structures 150, 151, which extend vertically continuously through the plurality of electrically insulating layer structures 102 and each of which comprises a (substantially) continuous side wall. The vertical connection structures 150 are formed as columns and are made of a homogeneous material, for example a plated metal such as copper.

[0088] The stack 101 comprises a core structure 103 having a vertical through-connection 155, which is electrically connected to a corresponding vertical connection structure 150 at the top side and the bottom side. Thus, the vertical connection structure 150 comprises a width that is larger (or smaller) than the width of the vertical through-connection 155, respectively. Above the core structure 103 and below the core structure 103, a plurality of electrically insulating layer structures 102 are arranged (symmetrically), and the vertical connection structures 150 extend through the electrically insulating layer structures 102 until the main surface of the corresponding stack / component carrier, and the vertical connection structures 150 also pass through the outer layer 108, such as a surface treatment or solder resist. At the main surface, the vertical connection structures 150 terminate at exposed free ends 156 (one stack surface relative to the stack surface). The exposed free ends 156 are flush with the main surface of the component carrier. Additionally and / or alternatively, the exposed free end 156 may protrude in a major surface of a component carrier (not shown) and / or the exposed free end 156 may be recessed in a major surface of a component carrier (not shown).

[0089] The further electrically conductive layer structure 104 is arranged (in particular embedded) between the electrically insulating layer structures 102 and the further electrically conductive layer structure 104 is arranged between the electrically insulating layer structures 102 and the further electrically conductive layer structure 104 is arranged Figure 1A 102. The components of the component carrier 100 are shown as metal pads between vertical connection structures 150. Alternatively, there may be some parts inside the component carrier 100: some of the components are not arranged between the further electrically conductive layer structures 104 between the electrically insulating layer structures 102 (not shown). The electrically conductive layer structure 104 also includes further vertical connection structures 151, which extend vertically and continuously through a plurality of the electrically insulating layer structures 102, in this example, the vertical connection structures 150 and the further vertical connection structures 151 are oriented in parallel and (offset to each other along the stack thickness direction z). In this example, the terms "vertical connection structures 150" and "further vertical connection structures 151" can be interchanged.

[0090] The vertical connection structures 150 are connected to horizontal traces 134 of the electrically conductive layer structure 104 (which traces 134 extend in horizontal direction between the vertical connection structures 150 and form part of a discontinuous electrically conductive layer structure). The traces 134 are arranged at a vertical height between the vertical heights of the opposite sub-portions 131 , 132 of the vertical connection structures 150 .

[0091] Additionally or alternatively, the vertical connection structure 150 includes at least two superimposed sub-portions 131, 132, with a joint 133 between the at least two superimposed sub-portions 131, 132, wherein the joint 133 (being a joint surface) is at the same vertical height as the joint between two adjacent electrically insulating layer structures 102. In this example, the trace 134 and the joint 133 may be arranged at similar positions.

[0092] The lateral misalignment between the vertically continuously extending sub-portions 131, 132 makes the center line of each sub-portion 131, 132 located inside a virtual circle with a diameter of no more than 5 μm. In addition, the lateral step between adjacent sub-portions 131, 132 of the vertically continuously extending connection structure 150 is lower than 2 μm.

[0093] It can also be seen that a portion of the upper sub-portion 132 extending continuously in the vertical direction partially extends (protrudes) into the core layer structure 103. The protruding portion may be, for example, a metal trace embedded inside the core material. This structure may be a remnant of the manufacturing process and may be formed by a two-step process of drilling and plating. This structure may also be formed purposefully, for example to enhance stability. In addition, as Figure 1A and 1B As shown, at least two electrically insulating layer structures 102 , 112 (in particular a plurality of electrically insulating layer structures 102 , 112 ) are in direct contact with at least two side walls (parts) (in particular four side walls (parts)) of the vertical connecting structure 150 and / or the further vertical connecting structure 151 . Figure 1B Two component carriers 100 according to another exemplary embodiment of the present invention are shown. Both component carriers 100 have been manufactured on a temporary carrier (see FIGS. 4 and 5 ), in particular, both component carriers 100 have been manufactured on two opposite main surfaces of the temporary carrier. Figure 1A Compared to the example of , the layer stack 101 is not arranged (and formed) on the opposite major surfaces of the core structure 103, but is arranged on a temporary carrier.

[0094] FIG. 3A to FIG. 3K A first method of producing a component carrier 100 comprising a core structure 103 according to an exemplary embodiment of the invention is shown.

[0095] Figure 3AA core structure 103 (e.g. a fully cured (reinforced) resin or inorganic structure) with vertical through connections 155 (filled vias) is provided. An electrically conductive layer structure 104, e.g. an electrically conductive layer structure 104 formed by patterning a continuous electrically conductive layer, is arranged on the upper and lower main surfaces of the core structure 103, respectively. It can be seen that some of the electrically conductive layer structures 104 comprise a larger width (in the horizontal direction) than other electrically conductive layer structures. The electrically conductive layer structures may be provided by (copper) plating.

[0096] Figure 3B The above-mentioned electrically conductive layer structure 104 with a larger width is extended in the vertical direction by providing additional electrically conductive material on top (e.g., by plating). The plating can be performed according to established procedures, for example, including providing a mask, developing the mask, plating, stripping the mask, etc. Thus, a vertical connection structure 150 and an additional vertical connection structure 151 are formed.

[0097] Figure 3C : The electrically conductive layer structure 104 at the upper main surface and the lower main surface of the core layer structure 103 is completely embedded (for example by lamination) in the electrically insulating material 102, which is, for example, an organic material, preferably a glass-reinforced organic material, such as ABF (organic resin + glass balls) and prepreg (organic resin + glass fiber) and a pure resin system (only organic resin) or a photo-imaging dielectric material.

[0098] Figure 3D : A portion of the electrically insulating material 102 is removed (e.g. by grinding or etching (e.g. by dry etching, in particular plasma etching) so that the upper surface of the electrically conductive layer structure 104 formed as the vertical connection structure 150 and the further vertical connection structure 151 is exposed. In this process, the roughness of the vertical connection structure 150 and the further vertical connection structure 151 can be improved. This measure can ensure a higher level of connection with the plating on the top - because there is more surface to be connected.

[0099] Figure 3E The second electrically conductive layer structure 114 is arranged on the electrically insulating material / layer structure 102 such that a portion of the first electrically conductive layer structure 104 (in the form of metal traces) is covered in the vertical direction. Thereby, the second electrically conductive layer structure 114 is offset relative to the vertical connection structure 150 and the further vertical connection structure 151. The second electrically conductive layer structure 114 may be formed, for example, by patterning a foil or by plating.

[0100] Figure 3FThe vertical connection structure 150 and the further vertical connection structure 151 are further extended in the vertical direction by further electrically conductive material (eg by plating) so that the vertical connection structure 150 and the further vertical connection structure 151 are higher than the second electrically conductive layer structure 114 in the vertical direction z.

[0101] Figure 3G : The second electrically conductive layer structure 114 at the upper main surface and the lower main surface of the core layer structure 103 as well as the extended vertical connection structure 150 and the further vertical connection structure 151 are completely embedded (encapsulated) or molded in the second electrically insulating material 112.

[0102] Figure 3H : A portion of the second electrically insulating material 112 is removed (eg by grinding or etching (see above)) so that only the upper surfaces of the vertical connection structures 150 and the further vertical connection structures 151 are exposed.

[0103] Fig. 3I : The third electrically conductive layer structure 124 is arranged on the second electrically insulating material / layer structure 112, so that a part of the second electrically conductive layer structure 114 (in the form of metal traces) is covered in the vertical direction. In this step, the vertical connection structure 150 and the further vertical connection structure 151 are also extended to the same height as the metal traces (by plating). Generally, each plating sequence (also within one plating step in the case of applying pulse plating) can be regarded as a layer structure. Therefore, the extension obtained by plating can be reflected in the final product by such a plated layer structure.

[0104] Figure 3J An external layer 108, for example a solder resist, is arranged between the vertical connection structure 150, the further vertical connection structure 151 and the metal traces of the third electrically conductive layer structure 124, but such that the surfaces of said structures 124, 150, 151 remain exposed.

[0105] Figure 3K : An electronic component 180 (e.g., a semiconductor element) is mounted on top of the upper main surface of the final component carrier 100. Electrical connections (here solder balls) 181 are provided between the free (exposed) end 156 of each of the vertical connection structures 150, 151 and the electronic component 180, respectively, so that an electrical connection is established between the stack 101 and the electronic component 180.

[0106] Figures 4A to 4K A second method of manufacturing a component carrier 100 according to an exemplary embodiment of the present invention is shown.

[0107] Figures 4A to 4I :These steps are related to Figures 3A to 3KThe steps described are comparable, except that a temporary carrier 170 is used as a support during the layer stacking instead of the core structure 103. Whereas in the example of FIG. 3 , the layer stack is stacked directly above the core structure 103 and below the core structure 103; in the example of FIG. 4 , the layer stack is only temporarily arranged on the temporary carrier 170.

[0108] Figure 4J : The temporary carrier 170 is removed and two separate component carriers 100 are provided (see also Figure 1B ). Since there is no core structure 103, the vertical connection structures 150, 151 are through-connections that electrically connect the upper main surface to the lower main surface and extend continuously through the complete corresponding stack 101 (in the vertical direction). Other possible process steps may include, for example, providing a surface treatment (see above).

[0109] Figure 4K : Similar to Figure 3K In the example of the embodiment of the present invention, electronic components 180 are mounted on the final component carrier 100 (in this example, there are two final component carriers 100) and the electronic components 180 are electrically connected to the vertical connection structures 150, 151. At the lower main surface of the component carrier 100, free (exposed) ends 156 of the vertical connection structures 150, 151 remain.

[0110] FIG. 5A to FIG. 5K A third method of manufacturing a component carrier 100 according to an exemplary embodiment of the present invention is shown.

[0111] FIG. 5A to FIG. 5D Respectively and for FIG. 4A to FIG. 4D The examples described are comparable. However, the difference is that the vertical connection structures 150, 151 at the upper main surface of the temporary carrier 170 and the vertical connection structures 150, 151 at the lower main surface of the temporary carrier 170 are not arranged in the vertical direction (z) with the vertical connection structures at the upper main surface of the temporary carrier 170 above the vertical connection structures at the lower main surface of the temporary carrier 170, but on the contrary, they are offset relative to each other in the vertical direction. The same applies to the metal traces of the electrically conductive layer structure 104.

[0112] Figure 5EA second electrically conductive layer structure 114 is formed on top of the electrically insulating material 102. Thereby, the second electrically conductive layer structure 114 comprises not only the metal traces described above, but also significantly longer (in the horizontal direction) metal traces, here referred to as further elements 105. The further elements 105 are formed on the free ends 156 of the vertical connection structures 150 (on the upper and lower main surfaces of the temporary carrier 170, respectively) and are electrically connected to the free ends 156 of the vertical connection structures 150.

[0113] Fig. 5F :The vertical connection structure 150 is further stacked (built-up) by an electrically conductive material (e.g., by plating). For the additional element 105, at the end of the additional element 105 (in the horizontal direction), an electrically conductive material is provided so that two additional vertical connection structures 151 are formed. In other words, a bifurcated electrically conductive network 106 is formed, in which the original vertical connection structure 150 is located in the middle, and the additional two vertical connection structures 151 are located on the left and right sides of the vertical connection structure 150 (in the horizontal direction). The additional two vertical connection structures 151 are connected to the vertical connection structure 150 in a rectangular manner, that is, the horizontal metal traces of the additional element 105 are arranged at an angle of 90° relative to the vertical connection structure 150, and the additional two vertical connection structures 151 are respectively connected to the metal traces of the additional element 105 at another angle of 90° (thereby forming a trident shape).

[0114] The bifurcated structure bifurcates along one of the axes, but it can also be in the form of a cross or even a star with six connections, for example, in a direction orthogonal to the other two connections. The further element 105 on the left and the further element 105 on the right can have the same thickness or different thicknesses. The further element 105 can also bear different thicknesses when the further element 105 is part of a power distribution network (PDN), for example when thicker copper is needed to transmit higher levels of current.

[0115] Figure 5G : The extended vertical connection structures 150, 151 and the network structure 106 are completely embedded or molded in the second electrically insulating material 112 (such as prepreg).

[0116] Figure 5H : A portion of the second portion of the second electrically insulating material 112 is removed (eg by grinding or etching) so that only the upper surfaces of the vertical connection structure 150 and the further vertical connection structure 151 (including the network structure 106) are exposed.

[0117] Fig.5I: The third electrically conductive layer structure 124 is arranged on the second electrically insulating material / layer structure 112, so that a part of the second electrically conductive layer structure 114 (in the form of metal traces) is covered in the vertical direction. In this step, the vertical connection structure 150 and the further vertical connection structure 151 are also extended to the same vertical height as the metal traces of the third electrically conductive layer structure 124.

[0118] Figure 5J : The temporary carrier 170 is removed so that two final component carriers 100 can be provided. Before (or after) separation, an outer layer 108 (for example a solder resist) is formed on the outer main surface. In particular, three structures can be identified in the final component carrier 100:

[0119] i) The vertical connection structure 150 extends vertically continuously through the entire stack.

[0120] ii) A bifurcated network structure 106 in the form of a trident, with a vertical connection structure 150 located in the middle / center, further vertical connection structures 151 located on the left and right, and further elements 105 as horizontal connecting metal traces.

[0121] iii) another metal structure (trace) 107 of the electrically conductive layer structure 104 and / or the third electrically conductive layer structure 124, wherein a portion of the metal structure 107 is located below the further element 105 (of the network structure 106) in the vertical direction. Another portion of the metal structure 107 is located between the vertical connection structure 150 and the further vertical connection structure 151 of the network structure 106. At least two side surfaces of these smaller electrically conductive structures 107 between the vertical connection structures 150, 151 face the side surfaces of the vertical connection structure 150 and / or the branched electrically conductive network structure 106.

[0122] Figure 5K : Similar to Figure 3K and 4K In the example of the embodiment of the present invention, electronic components 180a, 180b are mounted on a final component carrier 100 (in this example, there are two final component carriers 100) and the electronic components 180a, 180b are electrically connected 181a, 181b to the vertical connection structures 150, 151. At the lower main surface of the component carrier 100, the free (exposed) ends 156 of the vertical connection structures 150, 151 are retained. In this example, due to the network structure 106, a complex (but flexible in design) electrical connection (e.g., circuit / power network) is enabled. It can also be seen that the distance (bump pitch) between the electrical connections (solder bumps) 181 on the left side of the electronic component 180 is greater than the distance (bump pitch) between the electrical connections (solder bumps) 181 on the right side of the electronic component 180.

[0123] Reference numerals list

[0124] 100 Component carriers

[0125] 101 stacked pieces

[0126] 102 Electrical insulation layer structure

[0127] 103 Core structure

[0128] 104 Electrically conductive layer structure

[0129] 105 Another component, horizontal trace

[0130] 106 Bifurcation Electrical Conductivity Network

[0131] 108 External layer (e.g. surface treatment, solder resist)

[0132] 112 Electrical insulation layer structure (second layer)

[0133] 114 Electrically conductive layer structure (second layer)

[0134] 124 Electrically conductive layer structure (third layer)

[0135] 131 First sub-part

[0136] 132 Second subsection

[0137] 133 Joint

[0138] 134 horizontal track

[0139] 150 vertical connection structure

[0140] 151Other vertical connection structures

[0141] 155 vertical through connection

[0142] 156 Free end

[0143] 170 Temporary bearing

[0144] 180 Electronic components

[0145] 181 electrical connection part, bump.

Claims

1. A component carrier (100), wherein: The component carrier comprises: A stack (101) comprising at least one electrically conductive layer structure (104) and a plurality of electrically insulating layer structures (102, 112); The at least one electrically conductive layer structure (104) comprises a vertical connection structure (150), wherein the vertical connection structure (150) extends vertically and continuously through at least two electrically insulating layer structures among the plurality of electrically insulating layer structures (102, 112).

2. The component carrier (100) according to claim 1, in, The at least one electrically conductive layer structure (104) comprises at least one further vertical connection structure (151), which extends vertically and continuously through at least two of the plurality of electrically insulating layer structures (102, 112).

3. The component carrier (100) according to claim 2, in, The vertical connection structure (150) and the other vertical connection structure (151) are electrically connected to each other.

4. The component carrier (100) according to claim 3, in, The vertical connection structure (150) and the further vertical connection structure (151) comprise different widths.

5. The component carrier (100) according to claim 2, in, The vertical connection structure (150) and the further vertical connection structure (151) are offset from each other in the stack thickness direction (z).

6. The component carrier (100) according to claim 5, in, The vertical connection structure (150), the further vertical connection structure (151) and the at least one further element (105) of the at least one electrically conductive layer structure (104) form a branched electrically conductive network structure (106).

7. The component carrier (100) according to claim 6, in, The branched electrical conductive network structure (106) includes at least two ends located on one side and one end located on the opposite side.

8. The component carrier (100) according to claim 7, in, The branched electrical conductive network structure (106) includes at least three ends located on one side and one end located on the opposite side.

9. The component carrier (100) according to claim 7, in, At least two of the vertical connection structure (150), the additional vertical connection structure (151) and the at least one additional element (105) are connected by one or more rectangular forming pieces, in particular, at least two of the vertical connection structure (150), the additional vertical connection structure (151) and the at least one additional element (105) are connected within the branched electrical conductive network structure (106) by one or more rectangular forming pieces.

10. The component carrier (100) according to claim 1, in, The vertical connection structure (150) is formed on the core layer structure (103) or above the core layer structure (103).

11. The component carrier (100) according to claim 10, in, The vertical connection structure (150) is electrically connected to the vertical through-connection portion (155).

12. The component carrier (100) according to claim 11, in, The vertical through-connection portion (155) has a substantially continuous vertical side wall, and the vertical side wall extends vertically through the core structure (103).

13. The component carrier (100) according to claim 11, in, The vertical connection structure (150) is formed in a coreless stack.

14. The component carrier (100) according to claim 1, in, The free end (156) of the vertical connection structure (150) is exposed relative to one of the surfaces of the stack (101).

15. The component carrier (100) according to claim 1, in, The vertical connection structure (150) is connected to the horizontal traces (134) of the at least one electrically conductive layer structure (104).

16. The component carrier (100) according to claim 15, in, The track (134) is arranged at a vertical height (z) between the vertical heights (z) of opposite vertical ends of the vertical connection structure (150) and / or the further vertical connection structure (151).

17. The component carrier (100) according to claim 1, in, The vertical connection structure (150) comprises at least two superimposed sub-sections (131, 132), and a joint (133) is provided between the at least two superimposed sub-sections (131, 132).

18. The component carrier (100) according to claim 17, in, The joint (133) and the joints between two adjacent electrical insulation layer structures (102) are at the same vertical height (z).

19. The component carrier (100) according to claim 17, in, The lateral misalignment between the sub-portions (131, 132) extending continuously in the vertical direction causes the center line of each sub-portion (131, 132) to be located inside a virtual circle with a diameter in the range of 2 μm to 10 μm, in particular, the lateral misalignment between the sub-portions (131, 132) extending continuously in the vertical direction causes the center line of each sub-portion (131, 132) to be located inside a virtual circle with a diameter not greater than 5 μm.

20. The component carrier (100) according to claim 17, in, The lateral step between adjacent sub-portions (131, 132) of the vertically continuously extending connection structure (150) is less than 2 μm.

21. The component carrier (100) according to claim 1, in, The vertical connection structure (150) is made of homogeneous material.

22. The component carrier (100) according to claim 21, in, The homogeneous material is a plated metal.

23. The component carrier (100) according to claim 22, in, The plated metal is plated copper.

24. A method of manufacturing a component carrier (100), wherein: The method comprises: Providing a stack (101) comprising at least one electrically conductive layer structure (104) and a plurality of electrically insulating layer structures (102, 112); and The at least one electrically conductive layer structure (104) is formed with a vertical connection structure (150) which extends vertically and continuously through at least two electrically insulating layer structures (102, 112) of the plurality of electrically insulating layer structures (102, 112).

25. The method according to claim 24, in, Forming the vertical connection structure (150) further includes: The vertical connection structure (150) is plated.

26. The method according to claim 25, in, The vertical connection structure (150) is plated on the core layer structure (103).

27. The method according to claim 25, in, The vertical connection structure (150) is plated on a temporary carrier (170).

28. The method of claim 24, wherein: The method further comprises: The at least one electrically conductive layer structure (104) is at least partially embedded in at least one of the electrically insulating layer structures (102, 112), in particular, the at least one electrically conductive layer structure (104) and the vertical connection structure (150) are at least partially embedded in at least one of the electrically insulating layer structures (102, 112).

29. The method according to claim 28, in, The embedding is performed after the vertical connection structure (150) is formed by plating.

30. The method according to claim 28, in, Embedding includes lamination.

31. The method according to claim 28, in, The at least one electrically conductive layer structure (104) and the vertical connection structure (150) are at least partially embedded in at least one of the electrically insulating layer structures (102, 112).

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