Semiconductor laser light source device

Abstract

And the temperature control module (4) is arranged on the metal base (1). And the supporting block (5) is arranged on the temperature control module (4). The back surface of the dielectric substrate (6) is bonded to the side surface of the support block (5). Differential drive signal lines (7a, 7b) are provided on the main surface of a dielectric substrate (6), and a semiconductor light modulation element (10) is mounted on the main surface of the dielectric substrate (6). The first pins (2b, 2c) are connected to one ends of the differential drive signal lines (7a, 7b). The other ends of the differential drive signal lines (7a, 7b) are connected to the semiconductor optical modulation element (10) by leads. And the temperature control module (4) is connected with the second pins (2e, 2f) through leads. The dielectric substrate (6) has a cutout (6a) on the metal mount (1) side. The temperature control module (4) and a part of the support block (5) are disposed in the internal space of the cutout (6a).

Description

Technical Field

[0001] The present disclosure relates to a semiconductor laser light source device that controls the temperature of a semiconductor light modulation element by a temperature control module. Background Art

[0002] SNS and video sharing services are becoming more and more popular around the world, and the capacity of data transmission is increasing rapidly. In order to cope with the high-speed and high-capacity signals in a limited installation space, the speed and miniaturization of optical transceivers are being promoted. In addition to high speed and low cost, optical devices are also required to have low power consumption in order to suppress running costs.

[0003] As the structure of the laser light source device equipped with a semiconductor light modulator, the TO-CAN (Transistor-Outlined CAN) type that can be commercialized cheaply is generally adopted. In the TO-CAN structure, glass is usually used to seal the pins to the metal base. Since the pressure caused by the difference in thermal expansion coefficients is used, the configuration of the pins and the spacing between the pins are important to ensure high airtightness.

[0004] The oscillation wavelength or light output of a semiconductor light modulator changes according to the temperature change caused by heat. Therefore, a temperature control module is used to keep the temperature of the semiconductor light modulator constant for a laser light source device equipped with the semiconductor light modulator (see, for example, Patent Document 1).

[0005] Patent Document 1: Japanese Patent No. 5188625

[0006] In the conventional structure, a semiconductor modulation element is mounted on a first dielectric substrate, a second dielectric substrate is mounted on a support block on a metal base, a high-frequency circuit of the second dielectric substrate is bonded to a pin, and the high-frequency circuit of the first dielectric substrate and the high-frequency circuit of the second dielectric substrate are connected by a conductive lead. Therefore, the high-frequency characteristics are degraded due to impedance mismatch between the pin and the semiconductor modulation element or an increase in inductance component. In addition, the cost is increased due to the existence of the second dielectric substrate and the support block on which it is mounted. In addition, since the electrical signal input to the semiconductor optical modulation element is a single-phase driving method, the power consumption becomes high. Summary of the invention

[0007] The present disclosure has been made to solve the above-mentioned problems, and an object of the present disclosure is to obtain a semiconductor laser light source device that can improve high-frequency characteristics and reduce costs and power consumption.

[0008] The semiconductor laser light source device involved in the present disclosure is characterized in that it comprises: a metal base; a first pin and a second pin penetrating the above-mentioned metal base; a temperature control module mounted on the above-mentioned metal base; a support block mounted on the above-mentioned temperature control module; a dielectric substrate having a main surface and a back surface on opposite sides to each other, and the above-mentioned back surface is bonded to the side surface of the above-mentioned support block; a differential drive signal line is arranged on the above-mentioned main surface of the above-mentioned dielectric substrate; a semiconductor light modulator is mounted on the above-mentioned main surface of the above-mentioned dielectric substrate; a conductive bonding material connects the above-mentioned first pin to one end of the above-mentioned differential drive signal line; a first conductive lead connects the other end of the above-mentioned differential drive signal line to the above-mentioned semiconductor light modulator; and a second conductive lead connects the above-mentioned temperature control module to the above-mentioned second pin, and the above-mentioned dielectric substrate has a cutout on the above-mentioned metal base side, and the above-mentioned temperature control module and a part of the above-mentioned support block are arranged in the internal space of the above-mentioned cutout.

[0009] In the present disclosure, the dielectric substrate has a cutout on the metal base side, and a temperature control module and a part of the support block are arranged in the internal space of the cutout. As a result, since the dielectric substrate on which the semiconductor modulation element is mounted can be extended to the vicinity of the metal base, the differential drive signal line of the dielectric substrate can be connected to the pin without passing through other dielectric substrates. As a result, the high-frequency characteristics can be improved and the cost can be reduced. In addition, since the electrical signal input method to the semiconductor optical modulation element is a differential drive method, the voltage amplitude of the signal generator can be reduced compared to the existing single-phase drive method, and the power consumption of the signal generator can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 This is a front perspective view showing the semiconductor device according to the first embodiment.

[0011] Figure 2 It is a top view showing the semiconductor laser light source device according to the first embodiment.

[0012] Figure 3 This is a side view showing the semiconductor laser light source device according to the first embodiment.

[0013] Figure 4 This is a rear perspective view showing the semiconductor laser light source device according to the first embodiment.

[0014] Figure 5 This is a rear perspective view showing the semiconductor laser light source device according to the second embodiment.

[0015] Figure 6 It is a top view showing a semiconductor laser light source device according to the third embodiment.

[0016] Figure 7 It is a rear perspective view showing the semiconductor laser light source device involved in Embodiment 3.

[0017] Figure 8 It is a side view showing a semiconductor laser light source device according to a fourth embodiment.

[0018] Fig. 9 It will be Figure 8 The portion surrounded by the dotted line is an enlarged view of the figure.

[0019] Fig.10 It is a side perspective view showing a semiconductor laser light source device according to a fourth embodiment.

[0020] Fig.11 It will be Fig.10 The portion surrounded by the dotted line is an enlarged view of the figure.

[0021] Fig.12 This is a schematic diagram showing a semiconductor laser light source device according to a fifth embodiment. DETAILED DESCRIPTION

[0022] Semiconductor laser light source devices according to the embodiments will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals and repeated descriptions may be omitted.

[0023] Implementation Method 1

[0024] Figure 1 This is a front perspective view showing the semiconductor device according to the first embodiment. Figure 2 It is a top view showing the semiconductor laser light source device according to the first embodiment. Figure 3 This is a side view showing the semiconductor laser light source device according to the first embodiment. Figure 4 This is a rear perspective view showing the semiconductor laser light source device according to the first embodiment.

[0025] The metal base 1 is a roughly circular metal plate. A plurality of pins 2a to 2g penetrate the metal base 1. In order to fix the pins 2a to 2g to the metal base 1, glass 3 is generally used. The material of the metal base 1 and the pins 2a to 2g is, for example, a metal such as copper, iron or stainless steel. The surface of the metal base 1 and the pins 2a to 2g may also be plated with gold or nickel. If the impedance is not matched, the frequency response characteristics deteriorate due to multiple reflections of the signal, and high-speed modulation becomes difficult. Therefore, the glass 3 is made of a material with a low dielectric constant so as to have the same impedance as the signal generator.

[0026] The temperature control module 4 is mounted on the metal base 1. The temperature control module 4 is formed by sandwiching a plurality of thermoelectric elements 4a made of materials such as BiTe by a lower substrate 4b and an upper substrate 4c made of materials such as AlN. The upper surface of the metal base 1 and the lower substrate 4b of the temperature control module 4 are bonded by a bonding material such as SnAgCu solder or AuSn solder. The lower substrate 4b has a protrusion that protrudes forward more than the upper substrate 4c, and the metallized parts 4d and 4e for supplying power to the thermoelectric elements 4a are provided on the protrusion.

[0027] The support block 5 is provided on the temperature control module 4. The support block 5 is a block of a metal material such as copper, iron or stainless steel with Au plating applied on the surface of the metal. In addition, the support block 5 may also be a structure in which an insulator such as ceramic or resin is covered with metal.

[0028] The dielectric substrate 6 has a main surface and a back surface on opposite sides. The back surface of the dielectric substrate 6 is bonded to the side surface of the support block 5. The dielectric substrate 6 has a notch 6a opened toward the metal base 1. The temperature control module 4 is arranged in the cutout 6a of the dielectric substrate 6. The dielectric substrate 6 is made of a ceramic material such as aluminum nitride (AlN) and has an electrical insulation function and a heat transfer function. The dielectric substrate 6 can be formed in one piece or by a combination of quadrilateral substrates.

[0029] Two differential drive signal lines 7a, 7b and a ground conductor 8 are provided on the main surface of the dielectric substrate 6 by Au plating and metallization. The differential drive signal lines 7a, 7b are microstrip lines or coplanar lines, and have an impedance equivalent to the output impedance of the signal generator. The ground conductor 8 is provided from the main surface of the dielectric substrate 6 to the upper surface and the back surface, and the ground conductor 8 on the back side is bonded to the support block 5. In addition, the signal conductor 9 is provided from the main surface of the dielectric substrate 6 to the upper surface.

[0030] The semiconductor light modulator 10 is mounted on the dielectric substrate 6. The modulator section of the semiconductor light modulator 10 is composed of a plurality of electric field absorption type light modulators. The semiconductor light modulator 10 is, for example, a modulator integrated laser diode (EAM-LD) in which an electric field absorption type light modulator using an InGaAsP quantum well absorption layer and a distributed feedback laser diode are integrated into a single chip. Laser light is radiated from the light emitting point of the semiconductor light modulator 10 along an optical axis perpendicular to the chip end face and parallel to the chip main surface.

[0031] The light receiving element 11, the temperature sensor 12 and the ceramic block 13 are mounted on the support block 5. As a bonding material for bonding the temperature sensor 12 and the ceramic block 13 to the support block 5, for example, SnAgCu solder or AuSn solder can be used. The temperature sensor 12 is, for example, a thermistor. The ceramic block 13 is, for example, an AlN substrate. A conductor film is provided on the upper surface of the ceramic block 13. Here, the light receiving element 11 is arranged on the negative Z-axis side of the semiconductor light modulating element 10.

[0032] The conductive lead 14a connects the distributed feedback laser diode of the semiconductor light modulator 10 to the signal conductor 9 on the main surface of the dielectric substrate 6. In addition, the conductors provided on the main surface of the dielectric substrate 6 may be relayed to connect them. The conductive lead 14b connects the signal conductor 9 on the upper surface of the dielectric substrate 6 to the pin 2a. The conductive leads 14c and 14d respectively connect one end of the two differential drive signal lines 7a and 7b to the EAM (electro-absorption modulator) electrode of the semiconductor light modulator 10. The conductive leads 14e and 14f respectively connect the other ends of the two differential drive signal lines 7a and 7b to the pins 2b and 2c. In addition, for example, a conductive bonding material such as SnAgCu solder or AuSn solder may be used to connect the other ends of the two differential drive signal lines 7a and 7b to the pins 2b and 2c.

[0033] The conductive lead 14g connects the temperature sensor 12 to the conductor film of the ceramic block 13. The conductive lead 14h connects the conductor film of the ceramic block 13 to the pin 2d. The conductive lead 14i connects the support block 5 to the metal base 1. In order to improve the high-frequency characteristics by strengthening the GND, multiple conductive leads 14i can be connected. The conductive leads 14j and 14k connect the metallized parts 4d and 4e of the temperature control module 4 to the pins 2e and 2f respectively. The conductive lead 14l connects the light receiving element 11 to the pin 2g.

[0034] The differential electrical signals input to the pins 2b and 2c are transmitted to the differential drive signal lines 7a and 7b via the conductive leads 14e and 14f, respectively, and applied to the modulator of the semiconductor light modulator 10 via the conductive leads 14c and 14d. Here, the electrical signals input to the pins 2b and 2c are electromagnetically coupled to the metal base 1. The metal base 1 is connected to the support block 5 via the conductive lead 14i, and the support block 5 is connected to the ground conductor 8 of the dielectric substrate 6. Therefore, the metal base 1, the support block 5, and the ground conductor 8 function as AC grounding.

[0035] If the temperature of the semiconductor light modulator 10 changes, the oscillation wavelength changes, so the temperature needs to be kept constant. For this reason, when the temperature of the semiconductor light modulator 10 rises, the temperature control module 4 cools it, and conversely, when the temperature drops, the temperature control module 4 generates heat to keep the temperature of the semiconductor light modulator 10 constant. The heat generated in the semiconductor light modulator 10 is transferred to the upper substrate 4c of the temperature control module 4 via the dielectric substrate 6 and the support block 5. The temperature control module 4 absorbs the heat received from the semiconductor light modulator 10. The heat absorbed by the temperature control module 4 is transmitted from the lower substrate 4b of the temperature control module 4 via the metal base 1 in the negative direction of the Z axis, and dissipated to the lower surface side of the metal base 1.

[0036] The temperature sensor 12 indirectly measures the temperature of the semiconductor light modulator 10 via the dielectric substrate 6 and the support block 5. The measured temperature is fed back to the temperature control module 4. When the temperature of the semiconductor light modulator 10 is higher than the target value, the temperature control module 4 cools it. On the contrary, when the temperature is lower than the target value, it generates heat. In this way, the temperature of the semiconductor light modulator 10 can be stabilized.

[0037] If the temperature sensor 12 and the pin 2d are directly connected by a wire, the ambient temperature transmitted from the outside to the metal base 1 flows into the temperature sensor 12 through the wire, and the correct temperature cannot be measured. For this reason, a ceramic block 13 is arranged between the temperature sensor 12 and the pin 2d for relay. As a result, the heat flowing into the temperature sensor 12 is reduced, and the temperature sensor 12 can measure the correct temperature.

[0038] The light receiving element 11 converts the optical signal into an electrical signal (O / E conversion). The electrical signal is transmitted to the pin 2g via the connected conductive lead 141. By providing the light receiving element 11, the number of pins penetrating the metal base 1 increases by one, but the intensity of the back light of the semiconductor light modulator 10 can be monitored. By feeding back the monitoring result, the driving current of the semiconductor light modulator 10 can be controlled in such a way that the light output becomes constant.

[0039] As described above, in this embodiment, the dielectric substrate 6 has the cutout 6a on the metal base 1 side, and the temperature control module 4 and a part of the support block 5 are arranged in the inner space of the cutout 6a. As a result, since the dielectric substrate 6 on which the semiconductor light modulator 10 is mounted can be extended to the vicinity of the metal base 1, the differential drive signal lines 7a and 7b of the dielectric substrate 6 can be connected to the pins 2b and 2c without passing through other dielectric substrates. Therefore, the number of signal reflection points is reduced, and the high-frequency characteristics are improved.

[0040] Furthermore, since the conventional second dielectric substrate, the support block for mounting the second dielectric substrate, and the conductive lead connecting the signal line of the first dielectric substrate and the signal line of the second dielectric substrate are not required, the cost can be reduced.

[0041] Furthermore, since the electrical signal input method to the semiconductor light modulation element is a differential drive method, the voltage amplitude of the signal generator can be reduced compared to the conventional single-phase drive method, and the power consumption of the signal generator can be reduced.

[0042] In the conventional structure, a second dielectric substrate is present between the semiconductor modulation element and the pin. Therefore, due to impedance mismatch at the connection point, signal reflection occurs, and the gain of the frequency band is reduced. On the other hand, in this embodiment, the second dielectric substrate is not required, so there is no reflection point of the signal, and a wider frequency band can be achieved compared with the conventional structure.

[0043] In the conventional structure, heat flows from the support block joined to the metal base via the second dielectric substrate and the conductive lead into the first dielectric substrate on which the semiconductor light modulator is mounted, so that the amount of heat absorbed by the temperature control module increases, and power consumption increases. On the other hand, in the present embodiment, since there is no support block joined to the metal base, power consumption can be reduced compared to the conventional structure.

[0044] In order to seal and fix the pins 2a to 2g to the metal base 1 through the glass 3, a compression method or a matching method is generally used. In order to maintain airtightness, it is important that each pin 2a to 2g has an equal pressure when sealing. Therefore, it is preferred to configure the pins 2a to 2g in a circular shape relative to the metal base 1. In addition, if the interval between adjacent pins 2a to 2g is too close, the sealing performance will deteriorate, so a certain degree of distance is required.

[0045] In the conventional structure, it is necessary to ensure space for the support block for mounting the second dielectric substrate on the metal base, so the pins cannot be evenly arranged and airtightness cannot be obtained. On the other hand, in the present embodiment, since there is no support block on the metal base 1, the pins 2a to 2g can be evenly arranged and airtightness is improved.

[0046] In addition, the pins 2b, 2c, 2e to 2g are arranged on the main surface side of the dielectric substrate 6. On the other hand, the pin 2a for supplying power to the distributed feedback laser diode of the semiconductor light modulator 10 and the pin 2d for supplying power to the temperature sensor 12 are arranged on the back side of the dielectric substrate 6. Therefore, since the pins 2a to 2g can be uniformly arranged in a circular shape with respect to the metal base 1, the airtightness is improved.

[0047] Furthermore, the conductive wire 14a connects the distributed feedback laser diode of the semiconductor light modulator 10 to the signal conductor 9 of the dielectric substrate 6, and the conductive wire 14b connects the signal conductor 9 to the lead 2a. Thus, power can be supplied from the lead 2a on the back side of the dielectric substrate 6 to the distributed feedback laser diode of the semiconductor light modulator 10 on the main surface side of the dielectric substrate 6 without using a complicated mechanism of a wire bonding device.

[0048] In addition, if the dielectric substrate 6 is in contact with the metal base 1, the heat from the outside transferred to the metal base 1 flows into the semiconductor light modulator 10 and the temperature sensor 12 via the dielectric substrate 6. This makes it difficult to control the temperature by the temperature control module 4. Therefore, it is preferable that the dielectric substrate 6 is not in contact with the metal base 1.

[0049] In addition, the pins 2b and 2c connected to the differential drive signal lines 7a and 7b have inner lead portions protruding from the upper surface of the metal base 1. The shorter the length of the inner lead portion, the less the inductance component, the less the loss caused by the reflection of the signal in the inner lead portion, and the higher the passband. In addition, in order to obtain the maximum voltage amplitude from the signal generator, a matching resistor can be provided on the main surface of the dielectric substrate 6 and connected in parallel with the semiconductor light modulation element 10.

[0050] Implementation Method 2

[0051] Figure 5 1 is a back perspective view showing a semiconductor laser light source device according to Embodiment 2. The ground conductor 8 is provided not only on the back of the dielectric substrate 6 but also on the side of the dielectric substrate 6 perpendicular to the upper surface of the metal base 1. In addition, the conductive lead 15 connects the metal base 1 to the ground conductor 8 provided on the side of the dielectric substrate 6. The conductive lead 15 is preferably connected on both sides of the lead 2b side and the lead 2c side, and may be a plurality of leads.

[0052] In the first embodiment, the grounding of the semiconductor modulation element is transferred from the grounding conductor 8 of the dielectric substrate 6 to the support block 5, and is connected to the metal base 1 via the conductive lead 14i. Therefore, the distance to the grounding is long, so the grounding becomes weak and the high-frequency characteristics may be degraded. On the other hand, in the present embodiment, since the grounding of the semiconductor modulation element is connected to the metal base 1 from the grounding conductor 8 of the dielectric substrate 6 via the conductive lead 15, the distance to the grounding becomes short, and the high-frequency characteristics are improved. In addition, by connecting using the conductive lead 15, compared with direct bonding, it is possible to suppress the inflow of heat from the metal base 1 to the dielectric substrate 6 and strengthen the grounding. In addition, by providing the grounding conductor 8 on the side of the dielectric substrate 6, the conductive lead 15 can be connected without changing the configuration of the pins.

[0053] Implementation 3

[0054] Figure 6 It is a top view showing a semiconductor laser light source device according to the third embodiment. Figure 7 It is a rear perspective view showing the semiconductor laser light source device involved in Embodiment 3.

[0055] Compared with the first embodiment, the dielectric substrate 6 is enlarged in both the positive and negative directions of the X axis, and extends outward from the pins 2b and 2c in a plan view. The conductive lead 16 connects the ground conductor 8 provided on the back side of the dielectric substrate 6 to the metal base 1. As in the second embodiment, the conductive lead 16 is preferably connected on both sides of the pin 2b side and the pin 2c side, and may be a plurality of leads.

[0056] According to this embodiment, heat inflow from the metal base 1 to the dielectric substrate 6 can be suppressed and grounding can be enhanced, similar to Embodiment 2. In addition, by enlarging the dielectric substrate 6, the conductive lead 16 can be connected from the back side of the dielectric substrate 6 without changing the arrangement of the pins.

[0057] Implementation 4

[0058] Figure 8 It is a side view showing a semiconductor laser light source device according to a fourth embodiment. Fig. 9 It will be Figure 8 The portion surrounded by the dotted line is an enlarged view of the figure. Fig.10 It is a side perspective view showing a semiconductor laser light source device according to a fourth embodiment. Fig.11 It will be Fig.10 The portion surrounded by the dotted line is an enlarged view of the figure.

[0059] The ground conductor 8 is provided not only on the back surface of the dielectric substrate 6 but also on the lower surface of the dielectric substrate 6 which is opposite to the upper surface of the metal base 1, at the left and right protrusions of the dielectric substrate 6 connected to the pins 2b and 2c. In addition, the ground conductor 8 provided on the lower surface of the dielectric substrate 6 is connected to the metal base 1 through the conductive spring 17. One end of the conductive spring 17 is bonded to the ground conductor 8 provided on the lower surface of the dielectric substrate 6 or the upper surface of the metal base 1 using a bonding material such as SnAgCu solder or AuSn solder. The conductive spring 17 is installed so as to be pressed against the upper surface of the metal base 1 through the dielectric substrate 6. The conductive spring 17 can be formed by processing a metal material such as copper, iron or stainless steel into a leaf spring or a coil spring, or can be a rubber material having conductivity.

[0060] In this embodiment, the contact area with the dielectric substrate 6 and the metal base 1 can be reduced by using the conductive spring 17. Therefore, as in the second embodiment, the heat inflow from the metal base 1 to the dielectric substrate 6 can be suppressed, and the grounding can be strengthened. In addition, by providing the conductive spring 17 in the space between the dielectric substrate 6 and the metal base 1, the grounding can be strengthened without changing the arrangement of the pins.

[0061] Implementation method 5

[0062] Fig.12 1 is a schematic diagram showing a semiconductor laser light source device according to Embodiment 5. A lens cover 18 is joined to the metal base 1 of any semiconductor laser light source device in Embodiments 1 to 4. The lens cover 18 is a hermetic sealing cover for hermetic sealing of the temperature control module 4, the support block 5, the dielectric substrate 6, the semiconductor light modulator 10, the temperature sensor 12, etc. mounted on the metal base 1. The lens cover 18 can improve moisture resistance and anti-interference performance. The lens of the lens cover 18 is made of glass composed of SiO2, for example, and converges the laser light emitted from the semiconductor light modulator 10 and makes it incident on the optical fiber.

[0063] Description of reference numerals:

[0064] 1…metal base; 2a to 2g…pins; 4…temperature control module; 5…support block; 6…dielectric substrate; 6a…cutout; 7a, 7b…signal line for differential drive; 8…ground conductor; 10…semiconductor light modulator; 11…light receiving element; 12…temperature sensor; 13…ceramic block; 14a to 14l, 15, 16…conductive leads; 17…conductive spring; 18…cover with lens.

Claims

1. A semiconductor laser light source device, characterized in that: have: Metal base; The first pin and the second pin pass through the metal base; A temperature control module is installed on the metal base; A support block, mounted on the temperature control module; a dielectric substrate having a main surface and a back surface on opposite sides to each other, wherein the back surface is bonded to the side surface of the support block; a differential drive signal line provided on the main surface of the dielectric substrate; a semiconductor light modulator mounted on the main surface of the dielectric substrate; A conductive bonding material connects the first pin to one end of the differential drive signal line; a first conductive lead connecting the other end of the differential drive signal line to the semiconductor light modulator; as well as A second conductive lead connects the temperature control module to the second pin, The dielectric substrate has a cutout on the metal base side, The temperature control module and a part of the support block are arranged in the inner space of the cutout.

2. The semiconductor laser light source device according to claim 1, characterized in that: Also available: a ground conductor disposed on the back surface of the dielectric substrate and joined to the support block; and The third conductive lead connects the support block and the metal base.

3. The semiconductor laser light source device according to claim 1, characterized in that: Also available: a ground conductor disposed on the back surface and side surfaces of the dielectric substrate; and The third conductive lead connects the ground conductor provided on the side surface of the dielectric substrate and the metal base.

4. The semiconductor laser light source device according to claim 1, characterized in that: Also available: a ground conductor provided on the back surface of the dielectric substrate extending outward from the first pin; and The third conductive lead connects the ground conductor to the metal base.

5. The semiconductor laser light source device according to claim 1, characterized in that: Also available: a ground conductor disposed on the back surface and the lower surface of the dielectric substrate; and The conductive spring connects the ground conductor provided on the lower surface of the dielectric substrate to the metal base.

6. The semiconductor laser light source device according to any one of claims 1 to 5, characterized in that: A cover with a lens is further provided which is bonded to the metal base and hermetically seals the temperature control module, the support block, the dielectric substrate, and the semiconductor light modulation element.

7. The semiconductor laser light source device according to any one of claims 1 to 6, characterized in that: The dielectric substrate does not contact the metal base.

8. The semiconductor laser light source device according to any one of claims 1 to 7, characterized in that: The conductive bonding material is a conductive wire.

9. The semiconductor laser light source device according to any one of claims 1 to 7, characterized in that: The conductive bonding material is solder.

10. The semiconductor laser light source device according to any one of claims 1 to 9, characterized in that: Also available: A third pin passes through the metal base; a temperature sensor mounted on the support block; and The fourth conductive lead connects the temperature sensor to the third pin.

11. The semiconductor laser light source device according to claim 10, characterized in that: A ceramic block is also provided which is mounted on the support block and is provided with a conductor film. The fourth conductive lead includes a conductive lead connecting the temperature sensor and the conductive film, and a conductive lead connecting the conductive film and the third pin.

12. The semiconductor laser light source device according to any one of claims 1 to 11, characterized in that: The modulator section of the semiconductor light modulator element is composed of a plurality of electric field absorption type light modulators.

13. The semiconductor laser light source device according to any one of claims 1 to 12, characterized in that: A light receiving element is further provided for monitoring the intensity of back light of the semiconductor light modulator.

Images