Machining method of titanium target

Abstract

The invention provides a machining method of a titanium target material. The machining method comprises the steps of finish-milling a welding surface, finish-milling a sputtering surface, finish-milling an appearance and finish-milling an R angle in sequence, and the cutting depth in the sputtering surface finish-milling process, the appearance finish-milling process and the R angle finish-milling process is gradually reduced step by step. By reasonably arranging the machining method, selecting a self-made cutter and setting reasonable machining parameters, the flatness, the parallelism and the size specification of the machined titanium target all meet the requirements of semiconductor products; the phenomenon of abnormal discharge caused by residual stress is effectively solved, the thickness of a stress layer on the surface of the target material after machining is effectively controlled, and normal use of the target material in the sputtering process is guaranteed.

Description

Technical Field

[0001] The invention belongs to the technical field of target material processing, and relates to a mechanical processing method of a target material, in particular to a mechanical processing method of a titanium target material. Background Art

[0002] At present, sputtering targets are mainly used in industries such as information storage, integrated circuits, displays, and automotive rearview mirrors, and are mainly used for magnetron sputtering of various thin film materials. Magnetron sputtering is a method for preparing thin film materials. It uses ions generated by an ion source to accelerate and gather into a high-speed ion flow in a vacuum. The accelerated particle flow bombards the surface of the object to be deposited with the film, and the ions and atoms on the surface of the object to be deposited exchange kinetic energy, depositing a nanometer or micron film on the surface of the object to be deposited. The bombarded solid is the raw material for depositing the film by sputtering, which is called a sputtering target.

[0003] In the production of large-scale integrated circuits, the target assembly is composed of a target material that meets the sputtering performance and a back plate that is combined with the target material and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the function of conducting heat, which can effectively ensure that the target material is sputtered under the action of magnetic field and electric field. In the prior art, the titanium target material needs to be machined and meet the quality requirements of size and flatness before it can be welded with the back plate.

[0004] The titanium target cutting process is accompanied by large plastic deformation at high temperature, high pressure and high strain rate. In this process, the tool exerts a strong extrusion force on the target material, causing the cutting layer to separate from the substrate under high stress, high strain and high cutting temperature, forming a machined surface. Therefore, there are large residual stresses and machining deformations in the machined titanium target material. The magnitude and distribution of residual stress will greatly affect the performance and life of the target material. It is difficult for the existing processing technology to effectively control the stress layer and machining deformation on the target surface, which often causes abnormalities in the target material during sputtering and prolongs the machining cycle.

[0005] CN 117182470A discloses a mechanical processing method for a titanium target material, wherein the titanium target material is a G6 titanium target material, and the mechanical processing method comprises plane rough processing, fine milling of the outer shape, first plane fine processing and second plane fine processing performed in sequence; the processing objects of the plane rough processing, the first plane fine processing and the second plane fine processing are the sputtering surface and the welding surface; the processing object of the fine milling of the outer shape is the side surface.

[0006] CN 116160026A discloses a surface processing method for a titanium-aluminum alloy target material, which comprises: using a tool to perform turning processing on the surface to be processed of the titanium-aluminum alloy target material; the turning fluid used in the turning processing is an emulsion aqueous solution, and the volume concentration of the emulsion aqueous solution is 11-15wt%; the model of the tool is CCGX120404.

[0007] At present, titanium targets have different target requirements for welding surface, sputtering surface and R angle, and the methods provided in the above patents do not distinguish the processing methods for welding surface, sputtering surface and R angle. In summary, it is urgent to develop a mechanical processing method for titanium targets. Summary of the invention

[0008] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a method for mechanical processing of a titanium target material. The present invention reasonably arranges the processing technology, selects self-made tools and sets reasonable processing parameters, so that the flatness, parallelism and size specifications of the processed titanium target material meet the requirements of semiconductor products; effectively solves the abnormal discharge phenomenon caused by residual stress, effectively controls the thickness of the stress layer on the surface of the target material after mechanical processing, and ensures the normal use of the target material during the sputtering process.

[0009] To achieve this object, the present invention adopts the following technical solutions:

[0010] The present invention provides a mechanical processing method for a titanium target material, the mechanical processing method comprising sequentially performing fine milling of a welding surface, fine milling of a sputtering surface, fine milling of an outer shape and fine milling of an R angle;

[0011] The cutting depth in the process of fine milling the sputtering surface, fine milling the shape and fine milling the R angle decreases step by step.

[0012] In the present invention, the titanium target is a G6.5 LCD plane target. The mechanical processing method provided by the present invention can effectively solve the abnormal discharge phenomenon of the LCD plane target caused by residual stress, effectively control the thickness of the stress layer on the surface of the target after mechanical processing, and ensure the normal use of the target during the sputtering process. In addition, the present invention reasonably arranges the processing technology, selects self-made tools, and sets reasonable processing parameters, so that the flatness, parallelism and surface roughness of the processed titanium target meet the requirements of semiconductor products.

[0013] Preferably, the purity of the titanium target material is ≥99.9%, for example, it may be 99.9%, 99.2%, 99.4%, 99.6% or 99.8%, etc., but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0014] In the present invention, the outer shape in the fine milling outer shape is the side wall of the titanium target material.

[0015] As a preferred technical solution of the present invention, the tool used in the fine milling of the welding surface includes a first non-standard R245 disc cutter.

[0016] Preferably, the blade material of the first non-standard R245 disc cutter includes cemented carbide, and the cemented carbide is coated with a coating.

[0017] Preferably, the first non-standard R245 disc cutter is equipped with 8 to 12 blades, for example, 8, 9, 10, 11 or 12 blades.

[0018] Preferably, the cemented carbide comprises tungsten-cobalt cemented carbide or titanium-nickel cemented carbide.

[0019] Preferably, the coating includes any one of a titanium nitride coating, a zirconium nitride coating or an aluminum oxide coating.

[0020] In the present invention, the first non-standard R245 disc cutter is obtained by optimizing and adjusting the 12T3K-MM2030 cutter and the Sandvik cutter, and combined with an appropriate amount of blades, it can achieve more accurate processing of the welding surface.

[0021] As a preferred technical solution of the present invention, the spindle speed in the fine milling welding surface is 220-260m / s, for example, it can be 220m / s, 230m / s, 240m / s, 250m / s or 260m / s, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0022] Preferably, the feed rate in the fine milling of the welding surface is 500-700 mm / min, for example, it can be 500 mm / min, 540 mm / min, 580 mm / min, 620 mm / min, 660 mm / min or 700 mm / min, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0023] Preferably, the cutting depth in the fine milling welding surface is 0.15-0.25 mm, for example, it can be 0.15 mm, 0.17 mm, 0.19 mm, 0.21 mm, 0.23 mm or 0.25 mm, but is not limited to the listed values, and other values ​​not listed in the numerical range are also applicable.

[0024] As a preferred technical solution of the present invention, the tool used in the fine milling of the sputtering surface includes a second non-standard R245 disc cutter.

[0025] Preferably, the blade material of the second non-standard R245 disc cutter includes cemented carbide, and the cemented carbide is coated with a coating.

[0026] Preferably, the coating includes any one of a titanium nitride coating, a zirconium nitride coating or an aluminum oxide coating.

[0027] Preferably, 2 to 4 blades, for example, 2, 3 or 4 blades are installed on the second non-standard R245 disc cutter.

[0028] In the present invention, the second non-standard R245 disc cutter is obtained by optimizing and adjusting the 12T3K-MM2030 cutter and the Sandvik cutter, and combined with an appropriate amount of blades, it can achieve more precise processing of the sputtering surface.

[0029] As a preferred technical solution of the present invention, the spindle speed in the fine milling sputtering surface is 220-260m / s, for example, it can be 220m / s, 230m / s, 240m / s, 250m / s or 260m / s, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0030] Preferably, the feed rate in the fine milling sputtering surface is 100-140 mm / min, for example, it can be 100 mm, 110 mm, 120 mm, 130 mm or 140 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0031] As a preferred technical solution of the present invention, the tool used in the fine milling of the shape includes a non-standard D20 milling cutter.

[0032] Preferably, the blade material of the non-standard D20 milling cutter includes tungsten steel.

[0033] As a preferred technical solution of the present invention, the spindle speed in the fine milling shape is 1600-2000m / s, for example, it can be 1600m / s, 1700m / s, 1800m / s, 1900m / s or 2000m / s, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0034] Preferably, the feed rate in the fine milling shape is 800-1200 mm / min, for example, it can be 800 mm / min, 900 mm / min, 1000 mm / min, 1100 mm / min or 1200 mm / min, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0035] As a preferred technical solution of the present invention, the tool used in the fine milling of the R angle includes a non-standard R3.5 internal R angle tool.

[0036] Preferably, the blade material of the non-standard R3.5 inner R angle knife includes tungsten steel.

[0037] In the present invention, the non-standard R3.5 inner R angle cutter is obtained by optimizing and adjusting the R3.5×75×D10MM cutter and the Sandvik cutter, and can better realize the precision milling of the R angle.

[0038] As a preferred technical solution of the present invention, it is characterized in that the spindle speed for fine milling R angle is 2800-3200m / s, for example, it can be 2800m / s, 2900m / s, 3000m / s, 3100m / s or 3200m / s, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0039] Preferably, the feed rate for fine milling of the R angle is 800-1200 mm / min, for example, it can be 800 mm / min, 900 mm / min, 1000 mm / min, 1100 mm / min or 1200 mm / min, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0040] Preferably, cutting fluid is used for cooling during the machining process of the machining method.

[0041] Preferably, during the machining process of the mechanical machining method, the titanium target is fixed by a vacuum chuck.

[0042] As a preferred technical solution of the present invention, the sputtering surface, shape and R angle of the titanium target are processed in layers independently.

[0043] Preferably, the cutting depth in the layered processing is gradually reduced from 0.3 to 0.35 mm to 0.02 to 0.05 mm;

[0044] Preferably, the layering process is performed 3 to 4 times, for example, 3 or 4 times.

[0045] Preferably, the decrease in cutting depth between two adjacent layering processes is 0.05-0.1 mm, for example, it can be 0.05 mm, 0.06 mm, 0.07 mm, 0.08 mm, 0.09 mm or 0.1 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0046] More specifically, the cutting depth in the layered processing includes: 0.3-0.2-0.1-0.05mm,

[0047] Preferably, the machining allowance for each layering process is 0.8-1.2 mm, for example, 0.8 mm, 0.9 mm, 1.0 mm, 1.1 mm or 1.2 mm, but is not limited to the listed values, and other values ​​not listed within the numerical range are also applicable.

[0048] In the present invention, the problem of residual stress layer and machining deformation on the surface of the target material during machining and abnormal discharge during target sputtering is further solved through layered machining with gradually decreasing cutting depth.

[0049] As a preferred technical solution of the present invention, the mechanical processing method of the titanium target provided by the present invention comprises the following steps:

[0050] (1) Fine milling of the welding surface: The tool used for fine milling of the welding surface includes a first non-standard R245 disc cutter equipped with 8 to 12 carbide blades, a spindle speed of 220 to 260 m / s, a feed rate of 500 to 700 mm / min, and a cutting depth of 0.15 to 0.25 mm;

[0051] (2) Fine milling of the sputtering surface: The tool used for fine milling of the sputtering surface includes a second non-standard R245 disc cutter equipped with 2 to 4 carbide blades, a spindle speed of 220 to 260 m / s, and a feed rate of 100 to 140 mm / min;

[0052] (3) Fine milling: The tool used in the fine milling includes a non-standard D20 milling cutter with a blade made of tungsten steel, a spindle speed of 1600 to 2000 m / s, and a feed rate of 800 to 1200 mm / min;

[0053] (4) Fine milling R angle: The tool used for fine milling R angle includes a non-standard R3.5 inner R angle tool whose blade material is tungsten steel; the spindle speed is 2800-3200 m / s, and the feed rate is 800-1200 mm / min;

[0054] In which, the fine milling of the sputtering surface, the fine milling of the shape and the fine milling of the R angle in steps (2) to (4) are independently performed by a layered processing method; the cutting depth in the layered processing is gradually reduced from 0.3 to 0.35 mm to 0.02 to 0.05 mm, the number of layered processing is 3 to 4 times, and the decrease in the cutting depth between two adjacent layered processing is 0.05 to 0.1 mm; the processing allowance for each layered processing is 0.8 to 1.2 mm.

[0055] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0056] The system refers to an equipment system, a device system or a production device.

[0057] Compared with the prior art, the present invention has the following beneficial effects:

[0058] (1) The present invention reasonably arranges the processing technology, selects self-made tools and sets reasonable processing parameters, so that the flatness, parallelism and size specifications of the processed titanium target meet the requirements of semiconductor products;

[0059] (2) The mechanical processing method provided by the present invention can effectively solve the abnormal discharge phenomenon of LCD planar target material caused by residual stress, effectively control the thickness of the stress layer on the surface of the target material after mechanical processing, and ensure the normal use of the target material during the sputtering process. DETAILED DESCRIPTION

[0060] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0061] Example 1

[0062] This embodiment provides a method for machining a titanium target, the method comprising the following steps:

[0063] (1) Fine milling of the welding surface: The tool used for fine milling of the welding surface includes a first non-standard R245 disc cutter equipped with 10 carbide blades, a spindle speed of 240 m / s, a feed rate of 600 mm / min, and a cutting depth of 0.2 mm; the carbide blades are coated;

[0064] (2) Fine milling of the sputtering surface: the tool used for fine milling of the sputtering surface includes a second non-standard R245 disc cutter equipped with 2 to 4 carbide blades; the spindle speed is 240 m / s, and the feed rate is 120 mm / min; the carbide blades are coated;

[0065] The cutting depth in the fine milling of the sputtering surface decreases step by step, and is 0.3mm, 0.2mm, 0.1mm and 0.05mm respectively; the machining allowance for each machining is 1mm;

[0066] (3) Fine milling: The tool used in the fine milling includes a non-standard D20 milling cutter with a blade made of tungsten steel, a spindle speed of 1800 m / s, and a feed rate of 1000 mm / min;

[0067] The cutting depth in the fine milling shape is gradually reduced, which are 0.3mm, 0.2mm, 0.1mm and 0.05mm respectively; the machining allowance for each machining is 1mm;

[0068] (4) Fine milling R angle: The tool used for fine milling R angle includes a non-standard R3.5 external cylindrical cutter with a blade made of tungsten steel; the spindle speed is 3000 m / s, and the feed rate is 1000 mm / min;

[0069] The cutting depth in the fine milling R angle decreases step by step, which are 0.3mm, 0.2mm, 0.1mm and 0.05mm respectively; the machining allowance for each machining is 1mm.

[0070] Example 2

[0071] This embodiment provides a method for machining a titanium target, the method comprising the following steps:

[0072] (1) Fine milling of the welding surface: The tool used for fine milling of the welding surface includes a first non-standard R245 disc cutter equipped with 8 carbide blades, a spindle speed of 220 m / s, a feed rate of 500 mm / min, and a cutting depth of 0.15 mm; the carbide blades are coated;

[0073] (2) Fine milling of the sputtering surface: The tool used for fine milling of the sputtering surface includes a second non-standard R245 disc cutter equipped with two carbide blades, the spindle speed is 220 m / s, and the feed rate is 100 mm / min; the carbide blades are coated;

[0074] The cutting depth in the fine milling of the sputtering surface decreases step by step, and is 0.3mm, 0.2mm, 0.1mm and 0.02mm respectively; the machining allowance for each machining is 0.8mm;

[0075] (3) Fine milling: The tool used in the fine milling includes a non-standard D20 milling cutter with a blade made of tungsten steel, a spindle speed of 1600 m / s, and a feed rate of 800 mm / min;

[0076] The cutting depth in the fine milling shape is gradually reduced, which are 0.35mm, 0.25mm, 0.15mm and 0.05mm respectively; the machining allowance for each machining is 0.8mm;

[0077] (4) Fine milling of R angle: The tool used for fine milling of R angle includes a non-standard R3.5 external cylindrical cutter with a blade made of tungsten steel; the spindle speed is 2800 m / s, and the feed rate is 800 mm / min;

[0078] The cutting depth in the fine milling R angle decreases step by step, which are 0.3mm, 0.25mm, 0.15mm and 0.05mm respectively; the machining allowance for each machining is 0.8mm.

[0079] Example 3

[0080] This embodiment provides a method for machining a titanium target, the method comprising the following steps:

[0081] (1) Fine milling of the welding surface: The tool used for fine milling of the welding surface includes a first non-standard R245 disc cutter equipped with 12 carbide blades, a spindle speed of 260 m / s, a feed rate of 700 mm / min, and a cutting depth of 0.25 mm; the carbide blades are coated;

[0082] (2) Fine milling of the sputtering surface: The tool used for fine milling of the sputtering surface includes a second non-standard R245 disc cutter equipped with two carbide blades, the spindle speed is 260 m / s, and the feed rate is 140 mm / min; the carbide blades are coated;

[0083] The cutting depth in the fine milling of the sputtering surface decreases step by step, and is 0.32mm, 0.22mm, 0.12mm and 0.03mm respectively; the machining allowance for each machining is 1.2mm;

[0084] (3) Fine milling: The tool used in the fine milling includes a non-standard D20 milling cutter with a blade made of tungsten steel, a spindle speed of 2000 m / s, and a feed rate of 1200 mm / min;

[0085] The cutting depth in the fine milling shape is gradually reduced, which are 0.3mm, 0.2mm, 0.1mm and 0.05mm respectively; the machining allowance for each machining is 1mm;

[0086] (4) Fine milling R angle: The tool used for fine milling R angle includes a non-standard R3.5 external cylindrical cutter with a blade made of tungsten steel; the spindle speed is 3200 m / s, and the feed rate is 1200 mm / min;

[0087] The cutting depth in the fine milling R angle decreases step by step, which are 0.3mm, 0.2mm, 0.1mm and 0.05mm respectively; the machining allowance for each machining is 1.1mm.

[0088] Example 4

[0089] This embodiment provides a method for machining a titanium target material. The difference between the machining method and the embodiment 1 is that:

[0090] In this embodiment, the blades of the tools used in step (1) and step (2) are adjusted to diamond blades.

[0091] Example 5

[0092] This embodiment provides a method for machining a titanium target material. The difference between the machining method and the embodiment 1 is that:

[0093] In this embodiment, the tools used in step (1) and step (2) are adjusted so that no coating is provided on the cemented carbide blade.

[0094] Example 6

[0095] This embodiment provides a method for machining a titanium target material. The difference between the machining method and the embodiment 1 is that:

[0096] In this embodiment, the feed rate for fine milling of the sputtering surface in step (2) is adjusted to 80 mm / min.

[0097] Example 7

[0098] This embodiment provides a method for machining a titanium target material. The difference between the machining method and the embodiment 1 is that:

[0099] In this embodiment, the feed rate for fine milling of the sputtering surface in step (2) is adjusted to 160 mm / min.

[0100] Example 8

[0101] This embodiment provides a method for machining a titanium target material. The difference between the machining method and the embodiment 1 is that:

[0102] In this embodiment, the gradually decreasing cutting depths set in step (2), step (3) and step (4) are adjusted to be: 0.3 mm, 0.15 mm and 0.01 mm in sequence.

[0103] Example 9

[0104] This embodiment provides a method for machining a titanium target material. The difference between the machining method and the embodiment 1 is that:

[0105] In this embodiment, the gradually decreasing cutting depths set in step (2), step (3) and step (4) are adjusted to be: 0.3 mm and 0.05 mm, respectively.

[0106] Comparative Example 1

[0107] This comparative example provides a mechanical processing method for a titanium target material, and the mechanical processing method is different from that of Example 1 only in that:

[0108] In this comparative example, the stepwise decreasing cutting depth in steps (2), (3) and (4) is omitted, and the cutting depth is adjusted to 0.2 mm.

[0109] Comparative Example 2

[0110] This comparative example provides a mechanical processing method for a titanium target material, and the mechanical processing method is different from that of Example 1 only in that:

[0111] In this comparative example, the fine milling of the shape in step (3) is adjusted to before the fine milling of the welding surface in step (1), that is, the machining method is adjusted to sequentially perform fine milling of the shape, fine milling of the welding surface, fine milling of the sputtering surface, and fine milling of the R angle.

[0112] The flatness and deformation of the target materials processed by the machining methods provided in the above embodiments and comparative examples were tested, and the results are shown in Table 1.

[0113] Table 1

[0114]

[0115]

[0116] According to Table 1, we can know the following points:

[0117] (1) Comprehensive analysis of Examples 1-3 shows that in the present invention, by reasonably arranging the processing method, selecting the self-made tool, and setting reasonable processing parameters, the flatness, parallelism and size specifications of the processed titanium target material all meet the requirements of semiconductor products;

[0118] (2) Comprehensive analysis of Example 1 and Examples 4-5 shows that, in the present invention, the choice of blade material in the homemade tool will affect the effect of fine milling of the titanium target. When the diamond blade is replaced, the target is prone to deformation or cracking during the machining process.

[0119] (3) Comprehensive analysis of Example 1 and Examples 6-7 shows that adjusting the feed rate of fine milling of the sputtering surface will affect the processing effect of the sputtering surface, making it unable to meet the requirements of semiconductor products. This shows that the selection of process parameters is one of the important factors affecting the machining effect;

[0120] (4) Comprehensive analysis of Example 1, Examples 8-9 and Comparative Example 1 shows that the layered processing provided by the present invention can effectively solve the problems of residual stress layer and processing deformation on the surface of the target material during processing and abnormal discharge during target sputtering.

[0121] In summary, the present invention reasonably arranges the processing method, selects homemade tools, and sets reasonable processing parameters, so that the flatness, parallelism and size specifications of the processed titanium target material meet the requirements of semiconductor products; effectively solves the abnormal discharge phenomenon caused by residual stress, effectively controls the thickness of the stress layer on the surface of the target material after mechanical processing, and ensures the normal use of the target material during the sputtering process.

[0122] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for machining a titanium target, characterized in that: The mechanical processing method includes sequentially performing precision milling of welding surface, precision milling of sputtering surface, precision milling of outer shape and precision milling of R angle; The cutting depth in the process of fine milling the sputtering surface, fine milling the shape and fine milling the R angle decreases step by step.

2. The machining method according to claim 1, characterized in that: The tool used in the fine milling of the welding surface includes a first non-standard R245 disc cutter; Preferably, the blade material of the first non-standard R245 disc cutter includes cemented carbide, and the cemented carbide is coated with a coating; Preferably, the first non-standard R245 disc cutter is equipped with 8 to 12 blades; Preferably, the cemented carbide comprises tungsten-cobalt cemented carbide or titanium-nickel cemented carbide; Preferably, the coating includes any one of a titanium nitride coating, a zirconium nitride coating or an aluminum oxide coating.

3. The machining method according to claim 1 or 2, characterized in that: The spindle speed in the precision milling welding surface is 220-260 m / s; Preferably, the feed rate in the fine milling of the welding surface is 500-700 mm / min; Preferably, the cutting depth in the fine milling welding surface is 0.15-0.25 mm.

4. The machining method according to any one of claims 1 to 3, characterized in that: The tool used in the fine milling of the sputtering surface includes a second non-standard R245 disc tool; Preferably, the blade material of the second non-standard R245 disc cutter includes cemented carbide, and the cemented carbide is coated with a coating; Preferably, 2 to 4 blades are installed on the second non-standard R245 disc cutter.

5. The machining method according to any one of claims 1 to 4, characterized in that: The spindle speed in the fine milling sputtering surface is 220-260 m / s; Preferably, the feed rate in the fine milling of the sputtering surface is 100-140 mm / min.

6. The machining method according to any one of claims 1 to 5, characterized in that: The tool used in the fine milling of the shape includes a non-standard D20 milling cutter; Preferably, the blade material of the non-standard D20 milling cutter includes tungsten steel.

7. The machining method according to any one of claims 1 to 6, characterized in that: The spindle speed in the fine milling profile is 1600-2000 m / s; Preferably, the feed rate in the fine milling of the profile is 800-1200 mm / min.

8. The machining method according to any one of claims 1 to 7, characterized in that: The tool used in the fine milling R angle includes a non-standard R3.5 inner R angle tool; Preferably, the blade material of the non-standard R3.5 inner R angle knife includes tungsten steel.

9. The machining method according to any one of claims 1 to 8, characterized in that: The spindle speed for the precision milling R angle is 2800-3200 m / s; Preferably, the feed rate of the fine milling R angle is 800-1200 mm / min.

10. The machining method according to any one of claims 1 to 9, characterized in that: The sputtering surface, the shape and the R angle of the titanium target are processed in layers independently; Preferably, the cutting depth in the layered processing is gradually reduced from 0.3 to 0.35 mm to 0.02 to 0.05 mm; Preferably, the layering process is performed 3 to 4 times; Preferably, the decrease in cutting depth between two adjacent layering processes is 0.05 to 0.1 mm; Preferably, the machining allowance for each layering process is 0.8 to 1.2 mm.

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