Deposition device and method for large-size square mask plate blank

Abstract

The invention discloses a deposition device and method for a large-size square mask plate blank. The deposition device comprises a reaction chamber, a mold pool and a mold support. A row of production combustors are installed at the center line position of the top of the reaction chamber, the two sides of each production combustor are each provided with a row of soaking combustors, the mold support is arranged under the mold pool, a movement system is arranged under the mold support, and the movement system is connected with the mold pool. And the driving mechanism is used for driving the die support and the die pool above the die support to move up and down and reciprocate horizontally. The mask plate blank is deposited and grown through the production combustor, the growth face of the mask plate blank is softened and flattened at high temperature through the soaking combustor, the mold pool is driven by the movement system to reciprocate in the horizontal direction, the large-size square mask plate is obtained through one-step deposition, and the large-size square mask plate is directly used for the mask plate after being subjected to appearance machining. The processing links of the procedures of preferential lump manufacturing, machining and material selecting, groove sinking and shape changing and the like are not needed any more, the product preparation procedure is simplified, unnecessary loss of materials is reduced, and cost is saved.

Description

Technical Field

[0001] The present invention relates to the technical field of mask slab deposition, and in particular to a deposition device and method for a large-size square mask slab. Background Art

[0002] The development of the mask industry is mainly affected by the development of the downstream flat panel display industry, semiconductor chip industry, touch industry and circuit board industry. It is closely related to the development trend of mainstream consumer electronics, laptops, automotive electronics, network communications, home appliances, LED lighting, Internet of Things, medical electronics and other products in the terminal industry. The mask is gradually developing towards high precision, large size and full industrial chain. Especially after the LCD TV with large product size began to occupy the mainstream market, its average size has been steadily increasing at a rate of about 1 inch per year. According to statistics and forecasts, the shipment volume of large-size TVs such as 55 inches, 65 inches and 70 inches has increased year by year. The trend of TV size to large size has led to the gradual large-scale development of domestic panel substrates, which directly determines that the size of mask products will tend to develop in a large-scale direction. In 2006, the size of the 8th generation mask was 850×400mm, but in 2018, the size of the 10.5-11th generation mask has reached 1620×1780mm.

[0003] In the fields of flat panel display manufacturing and semiconductor manufacturing, quartz mask plates are made of high-purity quartz glass as the substrate, which has the advantages of high transmittance, high flatness, and low expansion coefficient. They are usually used in high-precision mask products. The production process of high-purity quartz substrates is difficult, especially for substrates for high-precision and high-generation panels for semiconductors. Large-size quartz mask plates are mainly made by CVD method to obtain large-size round ingots, and then the required products are obtained after cold and hot processing. In order to obtain large-size quartz products that meet actual use, the synthetic quartz ingots obtained by CVD deposition are usually reshaped and homogenized through multiple groove sinking to ensure high optical uniformity and large size requirements. Therefore, the deposited quartz ingot needs to be processed to remove the outer skin crystallization layer, and then the quartz ingot is divided into sections to select a groove sinking masterbatch of sufficient weight. The masterbatch is expanded by multiple molding in the groove sinking furnace to obtain a large-size blank. The blanks produced also need to be trimmed and ground on the upper and lower surfaces. The product process is complicated, the material loss is large, and the cost is also high. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a deposition device and method for large-sized square mask slabs. A row of production burners and two rows of equalizing burners are arranged on the top of the reaction chamber. The mask slab is deposited and grown by the production burners, and the growth surface of the mask slab is softened and flattened at high temperature by the equalizing burners on both sides. During the deposition process, the motion system drives the mold pool to move back and forth in the horizontal direction to achieve one-step deposition to obtain a quartz blank material of a large-sized square mask template. After the blank is processed in shape, it is directly used for the mask plate without the need to go through the processing steps of priority turning, material selection, and groove sinking and shaping. The product preparation process is simplified, unnecessary material loss is reduced, and cost is saved.

[0005] In order to solve the above technical problems, the present invention provides a deposition device for a large-size square mask blank, comprising a reaction chamber, and a mold pool and a mold support arranged in the reaction chamber;

[0006] A row of production burners is installed at the center line position of the top of the reaction chamber, and a row of equalizing burners is respectively arranged on both sides of the production burner, and the two rows of equalizing burners are arranged parallel to the center line. The production burner is used to deposit the growth mask slab, and the equalizing burner is used to soften and flatten the growth surface of the mask slab at high temperature;

[0007] The mold support is arranged directly below the mold pool, and the two are arranged concentrically to support the mold pool;

[0008] A motion system is arranged below the mold support, which is used to drive the mold support and the mold pool above it to move up and down and reciprocate in the horizontal direction, and the horizontal movement direction is perpendicular to the center line.

[0009] The present invention deposits a mask slab by feeding materials through a production burner arranged at the center line position of the top of the reaction chamber, reduces the temperature gradient in the horizontal direction of the mold pool through the heat equalizing burners arranged on both sides of the production burner, and softens and melts the surface of the deposited and grown mask slab at high temperature to flatten it, thereby improving the uniformity of the deposited and grown mask slab and ensuring its high optical uniformity; further, through the horizontal reciprocating drive of the motion system, the reaction surface and the melting surface of the deposited mask slab are effectively enlarged, and a large-sized square mask slab is deposited in one step. The mask slab can be directly used in the mask plate industry after shape processing, and a large-sized mask substrate can be obtained by slicing; there is no need to go through the process processing links such as priority milling, material selection and groove sinking and reshaping, thus saving product preparation processes, reducing unnecessary material loss, saving costs, and improving production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is improved by more than 300%.

[0010] Furthermore, the interval of the mold pool in the horizontal reciprocating direction is ±d, the width of the mold pool in the horizontal moving direction is 2d, and the spacing between the two rows of uniform heat burners is (1-2)d, wherein 400mm≤d≤600mm. In the initial state, the center line of the mold pool is located directly below a row of production burners.

[0011] Furthermore, the width of the mold pool perpendicular to the horizontal moving direction is 500-1500 mm.

[0012] Furthermore, the number of the production burners is an odd number ≥ 3, such as 3, 5, 7, 9, etc., and the production burner located in the middle is set at the center point of the center line of the reaction chamber, and the number and distribution of the uniform heat burners are consistent with those of the production burners.

[0013] Furthermore, a plurality of air supply ports are evenly arranged at the bottom of the reaction chamber for introducing filtered air; a plurality of waste outlets are evenly arranged in a circumferential direction on the side of the reaction chamber for discharging waste gas; and a furnace outlet is provided at the lower part of the side of the reaction chamber for entering and exiting the mold pool.

[0014] Furthermore, a furnace door is provided at the furnace outlet, and the furnace door is closed during the production process.

[0015] Furthermore, the reaction chamber is a closed chamber, which provides a growth space area for the deposition reaction; the materials of the reaction chamber and the mold pool are high-purity refractory materials, such as alumina, which have good thermal shock resistance and strength properties.

[0016] Furthermore, the lamp mouth ends of the production burner and the uniform heat burner extend into the reaction chamber by 5-10 mm.

[0017] Furthermore, the installation angle of the production burner and the equalizing burner is 85°-90° with the horizontal plane.

[0018] The second aspect of the present invention provides a working method of the deposition device of the large-size square mask blank according to the first aspect, comprising the following steps:

[0019] S1, preparation stage: air is introduced through the air supply port, and nitrogen is introduced through the production burner and the uniform heat burner for purging;

[0020] S2, waiting for production: switch the production burner to hydrogen spray, and then switch to hydrogen and oxygen spray after ignition. When the furnace temperature rises to above 200°C, switch the equalizing burner to hydrogen and oxygen spray;

[0021] S3, production stage: when the furnace temperature rises to the deposition temperature, silicon tetrachloride is introduced through the production burner, and the original hydrogen and oxygen are introduced, the quartz mask slab is deposited and grown in the mold pool, the motion system is started, and the mold pool begins to move horizontally back and forth and descend synchronously;

[0022] S4, production end stage: stop the introduction of silicon tetrachloride, wait until the upper surface of the quartz mask slab in the mold pool is burned flat, stop the introduction of hydrogen and oxygen into the production burner and the soaking burner, and turn off the motion system at the same time;

[0023] S5, furnace discharge stage: when the furnace temperature drops below 100°C, the furnace discharge port is opened, and the horizontal movement of the motion system is started to move the mold pool out of the reaction chamber, and the quartz mask blank is separated.

[0024] Furthermore, in S1, the flow rate of the air entering the air supply port is 2.5±0.5 m / s.

[0025] Furthermore, in S3, the deposition temperature is 1300±50° C., and the inlet flow rate of silicon tetrachloride is 10 L / min.

[0026] Furthermore, the bottom end of the production burner torch maintains a constant lamp distance of 250-350 mm from the deposition growth surface in the mold pool, and the horizontal movement speed of the mold pool is 1-25 mm / s.

[0027] Furthermore, the quartz mask slab is cold worked to remove the surface layer, and then sliced ​​and finely processed to obtain a quartz mask substrate.

[0028] Beneficial effects of the present invention:

[0029] The present invention uses a production burner arranged at the center line position of the top of the reaction chamber to deposit and produce a mask slab, uses heat equalizing burners arranged on both sides of the production burner to reduce the temperature gradient in the horizontal direction of the mold pool, and softens and melts the surface of the deposited and grown mask slab at high temperature to flatten it, thereby improving the uniformity of the deposited and grown mask slab and ensuring its high optical uniformity.

[0030] The present invention further uses the horizontal reciprocating drive of the motion system to effectively expand the reaction surface and the melting surface of the deposited mask slab, and deposits a large-sized square mask slab in one step. The mask slab can be directly used in the mask plate industry after shape processing, and a large-sized mask substrate can be obtained by slicing.

[0031] The process of the present invention is simple, and there is no need to go through the process steps of priority ingot making, material selection, and trough sinking and shaping, thereby saving product preparation steps, reducing unnecessary material loss, saving costs, and improving production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is increased by more than 300%. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 This is a schematic diagram of the structure of the deposition device of the large-size square mask blank of the present invention. Figure 1 ;

[0033] Figure 2This is a schematic diagram of the structure of the deposition device of the large-size square mask blank of the present invention. Figure 2 ;

[0034] Figure 3 It is the distribution diagram of the production burner and the heat equalization burner on the top of the reaction chamber of the present invention;

[0035] Explanation of the numbers in the figure: 1. Reaction chamber, 2. Mold pool, 3. Mold support, 4. Production burner, 5. Heat-averaging burner, 6. Mask slab, 7. Movement system, 8. Air supply port, 9. Waste outlet, 10. Furnace outlet. DETAILED DESCRIPTION

[0036] The present invention is further described below in conjunction with specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention.

[0037] Example 1

[0038] refer to Figure 1-3 This embodiment provides a deposition device for a large-size square mask blank, comprising a reaction chamber 1, and a mold pool 2 and a mold support 3 arranged in the reaction chamber 1; a row of production burners 4 is installed at the center line position of the top of the reaction chamber 1, and a row of uniform heat burners 5 is respectively arranged on both sides of the production burner 4, and the two rows of uniform heat burners 5 are arranged parallel to the center line, such as Figure 3 As shown, the production burner 4 is used to deposit the growth mask slab 6, and the heat equalizing burner 5 is used to soften and flatten the growth surface of the mask slab 6 at high temperature; the mold support 3 is arranged directly below the mold pool 2, and the two are arranged concentrically to support the mold pool 2; a motion system 7 is arranged below the mold support 3 to drive the mold support 3 and the mold pool 2 above it to move up and down and reciprocate in the horizontal direction, and the horizontal movement direction is perpendicular to the center line. During the deposition process, the mold pool 2 is driven by the motion system 7 to continuously descend to ensure that the bottom end of the lamp mouth of the production burner 4 maintains a constant lamp distance with the deposition growth surface, and the horizontal reciprocating movement facilitates the expansion of the deposition reaction surface and the melting surface. The motion system 7 for realizing vertical and horizontal movement is a conventional means for those skilled in the art. A vertical driving mechanism can be optionally arranged at the bottom of the mold support 3, and the vertical driving mechanism can be installed on the horizontal driving mechanism to realize the horizontal and vertical movement of the mold support 3 and the mold pool 2 above it.

[0039] In this embodiment, a production burner 4 disposed at the top center line position of the reaction chamber 1 is used to deposit and produce a mask slab 6, and a uniform heat burner 5 disposed on both sides of the production burner 4 is used to reduce the temperature gradient in the horizontal direction of the mold pool 2, and the surface of the deposited and grown mask slab 6 is softened, melted and flattened at high temperature, thereby improving the uniformity of the deposited and grown mask slab 6 and ensuring its high optical uniformity; further, the horizontal reciprocating drive of the motion system 7 is used to effectively expand the reaction surface and the melting surface of the deposited mask slab 6, and a large-sized square mask slab 6 is deposited in one step. The mask slab 6 can be directly used in the mask plate industry after shape processing, and a large-sized mask substrate can be obtained by slicing; there is no need to go through the process processing links such as priority milling, material selection and groove sinking and shaping, which saves product preparation processes, reduces unnecessary material loss, saves costs, and improves production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is improved by more than 300%.

[0040] Specifically, the interval of the reciprocating movement of the mold pool 2 in the horizontal direction is ±d, the width of the mold pool 2 in the horizontal movement direction is 2d, and the spacing between the two rows of uniform heat burners 5 is (1-2)d, wherein 400mm≤d≤600mm. In the initial state, the center line of the mold pool 2 is located directly below a row of production burners 4. The value of d can be selected according to actual needs. In this embodiment, d=500mm. At the same time, the width of the mold pool 2 perpendicular to the horizontal movement direction is 500-1500mm, which can be adjusted according to actual needs. In this embodiment, the width of the mold pool 2 perpendicular to the horizontal movement direction is 500mm.

[0041] Preferably, the number of the production burners 4 is an odd number ≥3, such as 3, 5, 7, 9, etc. In this embodiment, the number of the production burners 4 is 5, and the middle production burner 4 is arranged at the center point of the center line of the reaction chamber 1, and the number and distribution of the uniform heat burners 5 are consistent with those of the production burners 4.

[0042] Specifically, a plurality of air supply ports 8 are evenly arranged at the bottom of the reaction chamber 1 for introducing filtered air; a plurality of waste outlets 9 are evenly arranged in a circumferential direction on the side of the reaction chamber 1 for discharging waste gas; a furnace outlet 10 is arranged at the lower part of the side of the reaction chamber 1 for entering and exiting the mold pool 2; a furnace door is arranged at the furnace outlet 10, and the furnace door is closed during the production process; the reaction chamber 1 is a closed chamber, which provides a growth space area for the deposition reaction; the materials of the reaction chamber 1 and the mold pool 2 are high-purity refractory materials, such as alumina, which have good thermal shock resistance and strength properties.

[0043] Preferably, the lamp mouth ends of the production burner 4 and the uniform heat burner 5 extend into the reaction chamber 1 by 5-10 mm; the installation angles of the production burner 4 and the uniform heat burner 5 are 85°-90° with the horizontal plane, and the installation angles of the production burner 4 and the uniform heat burner 5 can be adjusted according to actual needs, wherein the installation angles of the middle production burner 4 and the uniform heat burner 5 are 90° with the horizontal plane, and the installation angles of the production burners 4 and the uniform heat burners 5 on both sides are symmetrically arranged.

[0044] Example 2

[0045] This embodiment provides a working method of the deposition device of the large-size square mask blank described in the above embodiment, comprising the following steps:

[0046] S1, preparation stage: air is introduced through the air supply port 8, and nitrogen is introduced through the production burner 4 and the uniform heat burner 5 for purging;

[0047] S2, waiting for production: switch the production burner 4 to hydrogen spray, and then switch to hydrogen and oxygen spray after ignition. When the furnace temperature rises to above 200°C, switch the heat-saturating burner 5 to hydrogen and oxygen spray;

[0048] S3, production stage: when the furnace temperature rises to the deposition temperature, silicon tetrachloride is introduced through the production burner 4, and the original hydrogen and oxygen are maintained, and the quartz mask slab 6 is deposited and grown in the mold pool 2. After half an hour, a raised mountain-shaped material strip is evenly distributed at the center line of the bottom of the mold pool 2. The motion system 7 is started, and the mold pool 2 begins to move back and forth horizontally and descend synchronously;

[0049] S4, production end stage: 10 days later, stop the introduction of silicon tetrachloride, wait until the upper surface of the quartz mask slab 6 in the mold pool 2 is burned flat (burning time 3h), introduce hydrogen and oxygen into the production burner 4 and the equalizing burner 5, and turn off the motion system 7 at the same time;

[0050] S5, furnace discharge stage: when the furnace temperature drops below 100°C, the furnace discharge port 10 is opened, and the horizontal movement of the motion system 7 is started to move the mold pool 2 out of the reaction chamber 1, and the quartz mask blank 6 is separated.

[0051] Specifically, in S1, the flow rate of the air introduced into the air supply port 8 is 2.5±0.5 m / s, and in S3, the deposition temperature is 1300°C.

[0052] Specifically, the bottom end of the production burner 4 torch and the deposition growth surface in the mold pool 2 maintain a constant lamp distance of 250-350 mm, and the mold pool 2 moves horizontally at a speed of 1-25 mm / s.

[0053] Preferably, the quartz mask plate blank 6 is cold-processed to remove the defective surface layer according to the required size of the mask plate to obtain a defect-free square quartz mask plate, which is then sliced ​​and finely processed to obtain a quartz mask substrate for a photomask.

[0054] In summary, the present invention deposits the mask slab by feeding materials through a production burner arranged at the center line position of the top of the reaction chamber, reduces the temperature gradient in the horizontal direction of the mold pool through the heat-averaging burners arranged on both sides of the production burner, and softens and melts the surface of the deposited and grown mask slab at high temperature to flatten it, thereby improving the uniformity of the deposited and grown mask slab and ensuring its high optical uniformity. The present invention further uses the horizontal reciprocating drive of the motion system to effectively expand the reaction surface and the melting surface of the deposited mask slab, deposits a large-sized square mask slab in one step, and the mask slab can be directly used in the mask plate industry after the shape is processed, and a large-sized mask substrate can be obtained by slicing. The present invention has a simple process, and does not require the process processing links such as priority milling, material selection, and groove sinking and reshaping, which saves product preparation processes, reduces unnecessary material loss, saves costs, and improves production efficiency. Compared with the traditional single-lamp deposition method, the production efficiency is improved by more than 300%.

[0055] The above-described embodiments are only preferred embodiments for fully illustrating the present invention, and the protection scope of the present invention is not limited thereto. Equivalent substitutions or changes made by those skilled in the art based on the present invention are within the protection scope of the present invention. The protection scope of the present invention shall be subject to the claims.

Claims

1. A deposition device for a large-size square mask blank, characterized in that: It includes a reaction chamber, and a mold pool and a mold support arranged in the reaction chamber; A row of production burners is installed at the center line position of the top of the reaction chamber, and a row of equalizing burners is respectively arranged on both sides of the production burner, and the two rows of equalizing burners are arranged parallel to the center line. The production burner is used to deposit the growth mask slab, and the equalizing burner is used to soften and flatten the growth surface of the mask slab at high temperature; The mold support is arranged directly below the mold pool and is used to support the mold pool; A motion system is arranged below the mold support, which is used to drive the mold support and the mold pool above it to move up and down and reciprocate in the horizontal direction, and the horizontal movement direction is perpendicular to the center line of the top of the reaction chamber.

2. The deposition device for a large-size square mask blank according to claim 1, characterized in that: The interval of the reciprocating movement of the mold pool in the horizontal direction is ±d, the width of the mold pool in the horizontal movement direction is 2d, and the spacing between the two rows of uniform heat burners is (1-2)d, wherein 400mm≤d≤600mm.

3. The deposition device for a large-size square mask blank according to claim 1, characterized in that: The width of the mold pool perpendicular to the horizontal moving direction is 500-1500mm.

4. The deposition device for a large-size square mask blank according to claim 1, characterized in that: The number of the production burners is an odd number ≥ 3, and the production burner located in the middle is arranged at the center point of the center line of the top of the reaction chamber, and the number and distribution of the uniform heat burners are consistent with those of the production burners.

5. The deposition device for a large-size square mask blank according to claim 1, characterized in that: A plurality of air supply ports are evenly arranged at the bottom of the reaction chamber, a plurality of waste discharge ports are evenly arranged in a circumferential direction on the side of the reaction chamber, and a furnace outlet is arranged at the lower part of the side of the reaction chamber.

6. The deposition device for a large-size square mask blank according to claim 1, characterized in that: The lamp mouth ends of the production burner and the equalizing burner extend into the reaction chamber by 5-10 mm.

7. The deposition device for a large-size square mask blank according to claim 1, characterized in that: The installation angle of the production burner and the equalizing burner is 85°-90° with the horizontal plane.

8. A method for operating the deposition device of the large-size square mask blank according to any one of claims 1 to 7, characterized in that: The steps include: S1, preparation stage: air is introduced through the air supply port, and nitrogen is introduced through the production burner and the uniform heat burner for purging; S2, waiting for production: switch the production burner to hydrogen spray, and then switch to hydrogen and oxygen spray after ignition. When the furnace temperature rises to above 200°C, switch the equalizing burner to hydrogen and oxygen spray; S3, production stage: when the furnace temperature rises to the deposition temperature, silicon tetrachloride is introduced through the production burner, and the quartz mask slab is deposited and grown in the mold pool. The motion system is started, and the mold pool begins to move horizontally back and forth and descend synchronously; S4, the end of production: stop the introduction of silicon tetrachloride, wait until the upper surface of the quartz mask slab in the mold pool is burned flat, then stop the introduction of hydrogen and oxygen into the production burner and the soaking burner, and at the same time close the motion system and cool down with the furnace; S5, furnace discharge stage: when the furnace temperature drops below 100°C, the furnace discharge port is opened, and the horizontal movement of the motion system is started to move the mold pool out of the reaction chamber, and the quartz mask blank is separated.

9. The deposition device for a large-size square mask blank according to claim 8, characterized in that: The bottom end of the production burner torch maintains a constant lamp distance of 250-350 mm from the deposition growth surface in the mold pool, and the mold pool moves horizontally at a speed of 1-25 mm / s.

10. The deposition device for a large-size square mask blank according to claim 8, characterized in that: The quartz mask plate blank is subjected to cold working to remove the surface layer, and then sliced ​​and finely processed to obtain a quartz mask substrate.

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