Low-defect superlattice long-wave infrared detector preparation method and infrared detector

Abstract

The invention provides a preparation method of a low-defect superlattice long-wave infrared detector. The preparation method comprises the following steps: step S1, growing an isolation oxide layer GaAlAsSb layer on a GaSb substrate material; step S2, an isolation oxide layer InAsSb layer is grown on the isolation oxide layer GaAlAsSb; s3, an NB [pi] BP material structure is arranged on the isolation oxide layer InAsSb layer; wherein the step S2 comprises the following steps of: growing a first InAsSb layer on the isolated oxide layer GaAlAsSb layer at a first preset temperature; growing a second InAsSb layer on the first InAsSb layer at a second preset temperature; growing a third InAsSb layer on the second InAsSb layer at a third preset temperature; the first preset temperature is smaller than the second preset temperature, and the second preset temperature is smaller than the third preset temperature. By growing an isolation oxide layer GaAlAsSb layer on a GaSb substrate material and growing an InAsSb layer at variable temperature, a defect-free atomic-scale two-dimensional layered structure epitaxial material surface can be obtained, and superlattice infrared detector material surface point defects caused by the GaSb substrate are greatly inhibited.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor chip manufacturing, and in particular to a method for preparing a low-defect superlattice long-wave infrared detector and an infrared detector. Background Art

[0002] Infrared detectors have important application needs in various fields related to national security construction, such as aerospace, military defense, etc. InAs / GaSb type II superlattice infrared detection technology is based on the relatively mature III-V compound semiconductor technology, and has the characteristics of flexible and adjustable energy bands, which can cover the 3-30 micron medium wave to far infrared band. Especially in the field of high-performance long-wave and very long-wave infrared detection technology urgently needed by high-end third-generation infrared detection systems, type II superlattices, with their superior material and device manufacturability and uniformity, can significantly improve the temperature and spatial resolution of infrared focal plane detectors, and have become an important direction for the development of current and future high-end infrared detection core devices.

[0003] High-quality long-wave or very long-wave InAs / GaSb II superlattice infrared detection materials are grown on GaSb. Advanced molecular beam epitaxy thin film material preparation technology can realize the preparation of complex multi-layer micro-nano structure superlattice, and its internal stress can be regulated to achieve near-perfect lattice matching. For long-wave and very long-wave infrared materials with very demanding process windows, InAs / GaSb II superlattice infrared detection technology has irreplaceable advantages. However, due to the easy oxidation of GaSb substrates, its polished surface to be epitaxially grown is very easy to be covered with an oxide film, and the thickness of the oxide layer is extremely uneven. Therefore, during the molecular beam epitaxy preparation of superlattice materials, after the deoxidation process, an uneven point defect structure will be formed on the surface, which has become an important factor restricting the performance of superlattice materials. These point defects will become an important source of dead pixels in the subsequent detector chip manufacturing process, and have become an important link affecting the quality of high-performance superlattice long-wave or very long-wave infrared detectors. Summary of the invention

[0004] The purpose of the present invention is to overcome the defects of the prior art and provide a method for preparing a low-defect superlattice long-wave infrared detector and an infrared detector.

[0005] In order to achieve the above and other purposes, the present invention is implemented by the following technical solutions: First, a method for preparing a low-defect superlattice long-wave infrared detector is provided, comprising the following steps:

[0006] Step S1, growing an isolation oxide layer GaAlAsSb layer on a GaSb substrate material;

[0007] Step S2, growing an isolation oxide layer InAsSb layer on the isolation oxide layer GaAlAsSb layer;

[0008] Step S3, providing a NBπBP material structure on the isolation oxide layer InAsSb layer;

[0009] Wherein, the step S2 comprises:

[0010] Step S21: growing a first InAsSb layer on the isolation oxide layer GaAlAsSb layer at a first preset temperature;

[0011] Step S22: growing a second InAsSb layer on the first InAsSb layer at a second preset temperature;

[0012] Step S23: growing a third InAsSb layer on the second InAsSb layer at a third preset temperature;

[0013] The first preset temperature is lower than the second preset temperature, and the second preset temperature is lower than the third preset temperature. In one embodiment, the thickness of the insulating oxide layer GaAlAsSb is 10-15 nm, and the composition is

[0014] Ga 0.9 Al 0.1 As 0.008 Sb 0.992 .

[0015] In one embodiment, the height of the first InAsSb layer is 20-30 nm, the height of the second InAsSb layer is 150-200 nm, and the height of the third InAsSb layer is 600-900 nm.

[0016] In one embodiment, the first preset temperature is ≤370°C, the second preset temperature is ≤430°C, and the third preset temperature is ≤480°C.

[0017] In one embodiment, the material of the InAsSb layer is InAs 0.91 Sb 0.09 Ternary compounds.

[0018] In one embodiment, in step S2, the NBπBP material structure includes a superlattice N-type contact layer, a superlattice hole barrier layer, a superlattice absorption region, a superlattice electron barrier layer and a superlattice P-type contact layer.

[0019] In one embodiment, the structure of the superlattice N-type contact layer is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the N-type doping concentration is 10 16 ~1017 cm -3 .

[0020] In one embodiment, the structure of the superlattice hole barrier layer is a 20-80 period superlattice, each period is composed of 2-3nm InAs and 1-2nm GaSb, or each period is composed of 4-6nm InAs and 1-2nm AlSb, and the N-type doping concentration is 10 15 ~2×10 16 cm -3 .

[0021] In one embodiment, the structure of the superlattice absorption region is a 100-800 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 .

[0022] In one embodiment, the structure of the superlattice electron barrier layer is a 20-80 period superlattice, each period is composed of 2-3 nm InAs and 2-4 nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 The structure of the superlattice P-type contact layer is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 16 ~10 17 cm -3 .

[0023] Secondly, the present invention also provides a low-defect superlattice infrared detector, which is prepared by any of the above-mentioned methods for preparing a low-defect superlattice infrared detector, and the infrared detector includes a substrate layer, an isolation oxide layer and a NBπBP material structure. The isolation oxide layer is arranged on the substrate layer, and the NBπBP material structure is arranged on the isolation oxide layer.

[0024] The present invention has the following beneficial effects:

[0025] 1. Compared with simple In- and Ga-containing antimonides, Al-containing antimonides have a lower surface atomic migration rate when grown at low temperatures. Therefore, when GaAlAsSb grows on a GaSb substrate, it will form a uniform atomic nucleation layer, effectively avoiding the local nucleation problem caused by defects and inhomogeneities on the substrate. In addition, GaAlAsSb and the GaSb substrate are lattice-matched and will not introduce mismatch defects. Therefore, by growing a GaAlAsSb layer on a GaSb substrate material at low temperature, on the one hand, the atomic nucleation density on the epitaxial surface can be regulated. On the other hand, combined with the stepwise variable temperature growth of the InAsSb layer from low temperature to high temperature, a defect-free atomic-level two-dimensional layered epitaxial material surface can be obtained, which greatly suppresses the surface point defects of the superlattice infrared detector material caused by the GaSb substrate. While isolating the oxide layer of the GaSb substrate material, it can also effectively block the influence of the GaSb substrate defects on the NBπBP material structure, thereby ensuring the quality of the infrared detector material.

[0026] 2. InAsSb and GaSb substrates have a high chemical etching selectivity, which is beneficial to remove the GaSb substrate by chemical etching when preparing the superlattice infrared detection chip. At this time, the InAsSb layer can protect the epitaxially grown superlattice material from damage as a corrosion barrier, thereby improving the superlattice infrared detector response rate and increasing packaging reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Shown is a schematic structural diagram of the low-defect superlattice infrared detector provided by the present invention.

[0028] Figure 2 A schematic diagram of a microscope showing sample 1;

[0029] Figure 3 Schematic diagram of the microscope for reference product 1;

[0030] Figure 4 is a schematic diagram of the microscope of reference product 2;

[0031] Figure 5 is the AMF schematic diagram of sample 1;

[0032] Figure 6 AMF schematic diagram of reference substance 1;

[0033] Figure 7 AMF schematic diagram of reference product 2. DETAILED DESCRIPTION

[0034] See also Figures 1 to 7. The following describes the implementation methods of the present invention through specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. It should be noted that many specific details are set forth in the following description to facilitate a full understanding of the present invention. However, the present invention can also be implemented in other ways different from those described herein. Therefore, the scope of protection of the present invention is not limited to the specific embodiments disclosed below. In addition, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance.

[0035] First, the present invention provides a method for preparing a low-defect superlattice long-wave infrared detector, which is achieved by the following steps:

[0036] Step S1: growing an isolation oxide layer GaAlAsSb layer on a substrate material;

[0037] Step S2: growing an isolation oxide layer InAsSb layer on the isolation oxide layer GaAlAsSb layer;

[0038] Step S3: Arranging a NBπBP material structure on the isolation oxide layer InAsSb layer.

[0039] In step S1, the substrate material is GaSb, the isolation oxide layer is a GaAlAsSb layer, and the material of the GaAlAsSb layer is preferably Ga 0.9 Al 0.1 As 0.008 Sb 0.992 The ratio of Ga:Al:As:Sb in the quaternary compound, i.e. the GaAlAsSb layer, is 0.9:0.1:0.008:0.992.

[0040] The isolation oxide layer is a GaAlAsSb layer with a thickness of 10-15 nm.

[0041] In step S2, the isolation oxide layer is an InAsSb layer, and the material of the InAsSb layer is preferably InAs 0.91 Sb 0.09 The ternary compound, that is, the InAsSb layer, contains In:As:Sb in a ratio of 1:0.91:0.09.

[0042] The method of temperature-variable growth is used to grow an InAsSb layer on the insulating oxide layer GaAlAsSb layer, comprising the following steps:

[0043] Step S21: growing a first InAsSb layer on the isolation oxide layer GaAlAsSb layer at a first preset temperature;

[0044] Step S22: growing a second InAsSb layer on the first InAsSb layer at a second preset temperature;

[0045] Step S23: growing a third InAsSb layer on the second InAsSb layer at a third preset temperature.

[0046] The first preset temperature is lower than the second preset temperature, the second preset temperature is lower than the third preset temperature, and the first preset temperature is ≤370°C, the second preset temperature is ≤430°C, and the third preset temperature is ≤480°C.

[0047] The height of the first InAsSb layer is 20-30 nm, the height of the second InAsSb layer is 150-200 nm, and the height of the third InAsSb layer is 600-900 nm.

[0048] Wherein, in step S3, the NBπBP material structure includes, from bottom to top, a superlattice N-type contact layer, a superlattice hole barrier layer, a superlattice absorption region, a superlattice electron barrier layer and a superlattice P-type contact layer.

[0049] In a preferred embodiment, the structure of the superlattice N-type contact layer is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the N-type doping concentration is 10 16 ~10 17 cm -3 .

[0050] In a preferred embodiment, the structure of the superlattice hole barrier layer is a 20-80 period superlattice, each period is composed of 2-3nm InAs and 1-2nm GaSb, or each period is composed of 4-6nm InAs and 1-2nm AlSb, and the N-type doping concentration is 10 15 ~2×10 16 cm -3 .

[0051] In a preferred embodiment, the structure of the superlattice absorption region is a 100-800 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 .

[0052] In a preferred embodiment, the structure of the superlattice electron barrier layer is a 20-80 period superlattice, each period is composed of 2-3nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm-3 .

[0053] In a preferred embodiment, the structure of the superlattice P-type contact layer is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 16 ~10 17 cm -3 .

[0054] The low-defect superlattice infrared detector preparation method provided by the present invention has a lower surface atomic migration rate when growing at low temperature than that of simple In-containing and Ga-containing antimonides. Therefore, when GaAlAsSb grows on a GaSb substrate, a uniform atomic nucleation layer will be formed, which effectively avoids the local nucleation problem caused by defects and inhomogeneities on the substrate. In addition, GaAlAsSb is lattice-matched with the GaSb substrate, and mismatch defects will not be introduced. Therefore, by growing a GaAlAsSb layer at low temperature on a GaSb substrate material, on the one hand, the atomic nucleation density of the epitaxial surface can be regulated, and on the other hand, combined with the stepwise variable temperature growth of the InAsSb layer from low temperature to high temperature, a defect-free atomic-level two-dimensional layered epitaxial material surface can be obtained, which greatly suppresses the surface point defects of the superlattice infrared detector material caused by the GaSb substrate, and can isolate the oxide layer of the GaSb substrate material while effectively blocking the influence of the GaSb substrate defects on the NBπBP material structure, thereby ensuring the quality of the infrared detector material.

[0055] Secondly, the present invention also provides a low-defect superlattice long-wave infrared detector, which is prepared by the above-mentioned low-defect superlattice long-wave infrared detector preparation method, such as Figure 1 As shown, the infrared detector includes a substrate layer 1, a first isolation oxide layer 2, a second isolation oxide layer 3 and a NBπBP material structure 4. The first isolation oxide layer 2 is arranged on the substrate layer 1, the second isolation oxide layer 3 is arranged on the first isolation oxide layer 2, and the NBπBP material structure 4 is arranged on the second isolation oxide layer 3.

[0056] In a preferred embodiment, the substrate layer 1 is configured as a GaSb layer.

[0057] In a preferred embodiment, the first isolation oxide layer 2 is a GaAlAsSb layer, and the thickness of the GaAlAsSb layer is 10-15 nm.

[0058] In a preferred embodiment, the second isolation oxide layer 3 is an InAsSb layer, including a first InAsSb layer 31, a second InAsSb layer 32 and a third InAsSb layer 33, wherein the first InAsSb layer 31, the second InAsSb layer 32 and the third InAsSb layer 33 are sequentially arranged from bottom to top. The height of the first InAsSb layer 31 is 20 to 30 nm, the height of the second InAsSb layer 32 is 100 to 250 nm, and the height of the third InAsSb layer 33 is 500 to 1000 nm.

[0059] In a preferred embodiment, the NBπBP material structure 4 includes, from bottom to top, a superlattice N-type contact layer 41 , a superlattice hole barrier layer 42 , a superlattice absorption region 43 , a superlattice electron barrier layer 44 and a superlattice P-type contact layer 45 .

[0060] The structure of the superlattice N-type contact layer 41 is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the N-type doping concentration is 10 16 ~10 17 cm -3 The structure of the superlattice hole barrier layer 42 is a 20-80 period superlattice, each period is composed of 2-3nm InAs and 1-2nm GaSb, or each period is composed of 4-6nm InAs and 1-2nm AlSb, and the N-type doping concentration is 10 15 ~2×10 16 cm -3 The structure of the superlattice absorption region 43 is a 100-800 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 The structure of the superlattice electron barrier layer 44 is a 20-80 period superlattice, each period is composed of 2-3nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 The structure of the superlattice P-type contact layer 45 is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 16 ~10 17 cm -3 .

[0061] The low-defect superlattice long-wave infrared detector provided by the present invention directly arranges GaAlAsSb layer and InAsSb layer on GaSb substrate material and NBπBP material structure, which can not only isolate the influence of oxide layer, but also facilitates to completely remove GaSb substrate when preparing superlattice infrared detection chip, that is, improves the response rate of superlattice infrared detector and increases packaging reliability.

[0062] The present invention will be further explained below in conjunction with specific embodiments.

[0063] Embodiment 1:

[0064] This embodiment provides a low-defect superlattice long-wave infrared detector, which is prepared by the following steps:

[0065] Step S1, growing an isolation oxide layer GaAlAsSb layer on a GaSb substrate material, wherein the thickness of the isolation oxide layer GaAlAsSb layer is 10 nm and the growth temperature is 350°C.

[0066] Step S2, growing an isolation oxide layer InAsSb layer on the isolation oxide layer GaAlAsSb layer:

[0067] A first InAsSb layer is grown on the isolation oxide layer GaAlAsSb layer at a first preset temperature of 350°C, and the height of the first InAsSb layer is 20nm; a second InAsSb layer is grown on the first InAsSb layer at a second preset temperature of 400°C, and the height of the second InAsSb layer is 180nm; and a third InAsSb layer is grown on the second InAsSb layer at a third preset temperature of 450°C, and the height of the third InAsSb layer is 780nm.

[0068] Step S3: Arrange a NBπBP material structure on the isolation oxide layer InAsSb layer:

[0069] A superlattice N-type contact layer is arranged on the third InAsSb layer, wherein the structure of the superlattice N-type contact layer is a 40-50 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the N-type doping concentration is 10 16 ~10 17 cm -3 A superlattice hole barrier layer is arranged on the superlattice N-type contact layer, and the structure of the superlattice hole barrier layer is a 40-50 period superlattice, and each period is composed of 2-3nm InAs and 1-2nm GaSb; a superlattice absorption region is arranged on the superlattice hole barrier layer, and the structure of the superlattice absorption region is a 300-500 period superlattice, and each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 1015 ~10 16 cm -3 A superlattice electron barrier layer is arranged on the superlattice absorption region, wherein the structure of the superlattice electron barrier layer is a 40-50 period superlattice, each period is composed of 2-3nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 A superlattice P-type contact layer is arranged on the superlattice electron barrier layer, wherein the structure of the superlattice P-type contact layer is a 40-50 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 16 ~10 17 cm -3 . A low-defect superlattice long-wave infrared detector was prepared.

[0070] Comparative Example 1:

[0071] This comparative example provides a superlattice infrared detector. The difference between this comparative example and Example 1 is that the isolation oxide layer is removed and the NBπBP material structure is directly provided on the GaSb substrate material. That is, the preparation method thereof includes:

[0072] A superlattice N-type contact layer is arranged on the GaSb substrate material. The structure of the superlattice N-type contact layer is a 40-50 period superlattice. Each period is composed of 4-6nm InAs and 2-4nm GaSb. The N-type doping concentration is 10 16 ~10 17 cm -3 A superlattice hole barrier layer is arranged on the superlattice N-type contact layer, and the structure of the superlattice hole barrier layer is a 40-50 period superlattice, and each period is composed of 2-3nm InAs and 1-2nm GaSb; a superlattice absorption region is arranged on the superlattice hole barrier layer, and the structure of the superlattice absorption region is a 300-500 period superlattice, and each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 A superlattice electron barrier layer is arranged on the superlattice absorption region, wherein the structure of the superlattice electron barrier layer is a 40-50 period superlattice, each period is composed of 2-3nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3A superlattice P-type contact layer is arranged on the superlattice electron barrier layer, wherein the structure of the superlattice P-type contact layer is a 40-50 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 16 ~10 17 cm -3 . A superlattice infrared detector was prepared.

[0073] Comparative Example 2:

[0074] This comparison provides a superlattice infrared detector. The only difference between this comparative example and Example 1 is that an isolation oxide layer InAsSb layer is directly grown at a constant temperature on a GaSb substrate material.

[0075] The low-defect superlattice infrared detector prepared in Example 1 is recorded as Sample 1, and the superlattice infrared detectors prepared in Comparative Example 1 and Comparative Example 2 are recorded as Reference 1 and Reference 2, respectively. Characterization analysis is performed on Sample 1, Reference 1, and Reference 2. Optical microscopy and atomic force microscopy (AMF) analysis are performed on Sample 1, Reference 1, and Reference 2, respectively. Figure 2 Schematic diagram of the microscope for sample 1. Figure 3 This is a microscope diagram of reference product 1. Figure 4 is a schematic diagram of the microscope of reference product 2; Figure 5 is the AMF schematic diagram of sample 1, Figure 6 AMF schematic diagram of reference substance 1. Figure 7 AMF schematic diagram of reference product 2.

[0076] Depend on Figures 2 to 4 It can be seen that the surfaces of reference samples 1 and 2 have obvious defects, while the surface of sample 1 prepared by the method for preparing a low-defect superlattice long-wave infrared detector provided by the present invention is smooth, which means that by low-temperature growth of a GaAlAsSb layer on a GaSb substrate material and variable temperature growth of a multi-layer InAsSb layer, the atomic nucleation density on the epitaxial surface can be regulated, and a defect-free atomic-level two-dimensional layered structure epitaxial material surface can be obtained, which greatly suppresses the point defects on the surface of the superlattice infrared detector material caused by the GaSb substrate.

[0077] Depend on Figure 5 to Figure 7As shown, through AFM detection, the roughness Ra of sample 1 prepared by the low-defect superlattice infrared detector preparation method provided by the present invention is less than 0.12nm; while the roughness Ra of reference sample 1 is about 0.25nm, and the roughness Ra of reference sample 2 is about 0.17nm. The roughness of sample 1 is much smaller than that of reference sample 1 and reference sample 2, which also shows that by low-temperature growth of GaAlAsSb layer on GaSb substrate material and variable temperature growth of multi-layer InAsSb layer, a defect-free atomic-level two-dimensional layered structure epitaxial material surface can be obtained, which greatly suppresses the surface point defects of the superlattice infrared detector material caused by the GaSb substrate.

[0078] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A method for preparing a low-defect superlattice long-wave infrared detector, characterized in that: The steps include: Step S1, growing an isolation oxide layer GaAlAsSb layer on a GaSb substrate material; Step S2, growing an isolation oxide layer InAsSb layer on the isolation oxide layer GaAlAsSb layer; Step S3, providing a NBπBP material structure on the isolation oxide layer InAsSb layer; Wherein, the step S2 comprises: Step S21: growing a first InAsSb layer on the isolation oxide layer GaAlAsSb layer at a first preset temperature; Step S22: growing a second InAsSb layer on the first InAsSb layer at a second preset temperature; Step S23: growing a third InAsSb layer on the second InAsSb layer at a third preset temperature; The first preset temperature is lower than the second preset temperature, and the second preset temperature is lower than the third preset temperature.

2. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 1, characterized in that: The thickness of the insulating oxide layer GaAlAsSb is 10-15 nm, and the composition is Ga 0.9 Al 0.1 As 0.008 Sb 0.992 .

3. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 2, characterized in that: The height of the first InAsSb layer is 20-30 nm, the height of the second InAsSb layer is 150-200 nm, and the height of the third InAsSb layer is 600-900 nm.

4. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 3, characterized in that: The first preset temperature is ≤370°C, the second preset temperature is ≤430°C, and the third preset temperature is ≤480°C.

5. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 4, characterized in that: The material of the InAsSb layer is InAs 0.91 Sb 0.09 Ternary compounds.

6. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 1, characterized in that: In the step S3, the NBπBP material structure includes a superlattice N-type contact layer, a superlattice hole barrier layer, a superlattice absorption region, a superlattice electron barrier layer and a superlattice P-type contact layer.

7. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 6, characterized in that: The structure of the superlattice N-type contact layer is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the N-type doping concentration is 10 16 ~10 17 cm -3 .

8. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 7, characterized in that: The structure of the superlattice hole barrier layer is a 20-80 period superlattice, each period is composed of 2-3nm InAs and 1-2nm GaSb, or each period is composed of 4-6nm InAs and 1-2nm AlSb, and the N-type doping concentration is 10 15 ~2×10 16 -3 cm.

9. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 8, characterized in that: The structure of the superlattice absorption region is a 100-800 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 .

10. The method for preparing a low-defect superlattice long-wave infrared detector according to claim 9, characterized in that: The structure of the superlattice electron barrier layer is a 20-80 period superlattice, each period is composed of 2-3nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 15 ~10 16 cm -3 The structure of the superlattice P-type contact layer is a 20-80 period superlattice, each period is composed of 4-6nm InAs and 2-4nm GaSb, and the P-type doping concentration is 10 16 ~10 17 cm -3 .

11. A low-defect superlattice long-wave infrared detector, prepared by the method for preparing a low-defect superlattice long-wave infrared detector according to any one of claims 1 to 10, characterized in that: The infrared detector includes a substrate layer, an isolation oxide layer GaAlAsSb layer, an isolation oxide layer InAsSb layer and a NBπBP material structure. The isolation oxide layer GaAlAsSb layer is arranged on the substrate layer, the isolation oxide layer InAsSb layer is arranged on the isolation oxide layer GaAlAsSb layer, and the NBπBP material structure is arranged on the isolation oxide layer InAsSb layer.

Images