Miniature light emitting diode device packaging structure, packaging method and display device

Abstract

The invention provides a micro light-emitting diode device packaging structure, a packaging method and a display device, the packaging structure comprises a micro light-emitting diode device, a packaging substrate and a light-transmitting film structure, and the micro light-emitting diode device comprises a micro light-emitting diode chip and a driving chip which are electrically connected; the packaging substrate comprises a bearing plate and a circuit board which are connected with each other, the micro light-emitting diode chip and the driving chip are sequentially stacked on the bearing plate, and the circuit board is electrically connected with the driving chip through an electric connecting piece; the light-transmitting film structure continuously covers the surface and the outer periphery of the micro light-emitting diode device and at least part of the surface of the packaging substrate. Based on this, the packaging structure of the present application has excellent packaging reliability and light-transmitting display performance.

Description

Technical Field

[0001] The present application relates to the field of semiconductor light emitting technology, and in particular to a micro light emitting diode device packaging structure, a packaging method and a display device. Background Art

[0002] Micro-LED (Micro-Light Emitting Diode) display technology is a display technology that miniaturizes and arrays the traditional LED (Light Emitting Diode) structure and uses CMOS (Complementary Metal Oxide Semiconductor) or TFT (Thin Film Transistor) to make driving circuits to achieve addressing control and individual drive of each pixel.

[0003] Among them, Micro-LED needs to be packaged after preparation, and the packaging method of Micro-LED in related technologies needs to be improved. Summary of the invention

[0004] The purpose of the present application is to provide a micro light emitting diode device packaging structure, packaging method and display device.

[0005] In a first aspect, the present application provides a micro light emitting diode device packaging structure, comprising:

[0006] A micro light emitting diode device, comprising an electrically connected micro light emitting diode chip and a driver chip;

[0007] A packaging substrate, comprising a carrier plate and a circuit board connected to each other, the micro light emitting diode chip and the driver chip are sequentially stacked on the carrier plate, and the circuit board is electrically connected to the driver chip through an electrical connector; and

[0008] The light-transmitting film structure continuously covers the surface and the outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate.

[0009] Optionally, the packaging structure further includes:

[0010] The encapsulating colloid wraps the electrical connector; wherein,

[0011] The light-transmitting film structure includes a first part, a second part and a third part that are connected, wherein the first part covers a portion of the surface of the carrier board, and the second part covers the surface and the outer periphery of the micro-light-emitting diode device; the third part covers the surface and the outer periphery of the packaging colloid, or, in the stacking direction of the micro-light-emitting diode device and the packaging substrate, the third part is arranged between the packaging substrate and the packaging colloid.

[0012] Optionally, the carrier board includes a first end and a second end that are arranged opposite to each other; the circuit board is provided with a first terminal structure that is electrically connected to the electrical connector, and the first terminal structure is stacked and connected to the first end; wherein,

[0013] The packaging structure includes a packaging area extending from the first terminal structure to the second end, and the light-transmitting film structure covers a surface and an outer periphery of the packaging area.

[0014] Optionally, the packaging structure further includes:

[0015] The encapsulating colloid wraps the electrical connector; wherein,

[0016] The light-transmitting film structure covers the packaging colloid; or, in the stacking direction of the micro-LED device and the packaging substrate, part of the light-transmitting film structure is arranged between the packaging substrate and the packaging colloid.

[0017] Optionally, the light-transmitting film structure includes an inorganic film layer structure.

[0018] Optionally, the thickness of the light-transmitting film structure is greater than 0 nanometers and less than or equal to 200 nanometers.

[0019] Optionally, the light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

[0020] Optionally, the light-transmitting film structure is a multi-layer film structure.

[0021] Optionally, in the stacking direction of the micro light emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one group of a first film layer and a second film layer stacked;

[0022] The first film layer is located between the micro light emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

[0023] Optionally, the light-transmitting film structure is a double-layer film structure, the material of the first film layer includes tantalum pentoxide, and the material of the second film layer includes silicon dioxide.

[0024] Optionally, the light-transmitting film structure is a four-layer film structure, the material of the first film layer includes zirconium pentoxide, and the material of the second film layer includes aluminum oxide.

[0025] Optionally, the micro light emitting diode chip includes a light emitting area and a non-light emitting area;

[0026] The packaging structure further includes:

[0027] The shading structure is arranged on a side of the light-transmitting film structure away from the micro-LED chip, and the orthographic projection of the light-shielding structure on the light-transmitting film structure covers the orthographic projection of the non-luminous area on the light-transmitting film structure.

[0028] Optionally, the packaging structure further includes:

[0029] The reinforcing colloid is arranged on a side of the circuit board away from the micro-light emitting diode device and in an area adjacent to a connection area between the circuit board and the carrier board.

[0030] Optionally, the packaging substrate further includes a reinforcing sheet and a second terminal structure disposed on two opposite sides of the circuit board, and a projection of the reinforcing sheet on the circuit board covers a projection of the second terminal structure on the circuit board.

[0031] In a second aspect, the present application also provides a micro light emitting diode device packaging method, comprising:

[0032] A micro light emitting diode device is provided, wherein the micro light emitting diode device comprises a micro light emitting diode chip and a driving chip which are electrically connected;

[0033] Providing a packaging substrate, the packaging substrate comprising a carrier plate and a circuit board connected to each other;

[0034] The micro light emitting diode chip and the driver chip are sequentially stacked on the carrier board, and the circuit board is electrically connected to the driver chip through an electrical connector;

[0035] A continuous light-transmitting film structure is formed on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate, and a micro-LED device packaging structure is formed.

[0036] Optionally, before the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate, the packaging method further comprises:

[0037] forming a packaging colloid that wraps the electrical connector;

[0038] The continuous light-transmitting film structure is formed on the surface and the outer periphery of the micro-light-emitting diode device and at least a part of the surface of the packaging substrate, comprising:

[0039] A continuous light-transmitting film structure is formed on a part of the surface of the carrier board, the surface and outer periphery of the micro-LED device, and the surface and outer periphery of the packaging colloid, and a micro-LED device packaging structure is formed.

[0040] Optionally, forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device and at least a portion of the surface of the packaging substrate to form a micro-light-emitting diode device packaging structure includes:

[0041] forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate;

[0042] A packaging colloid is formed to wrap the electrical connector, and the packaging colloid covers a portion of the light-transmitting film structure to form a micro-light-emitting diode device packaging structure.

[0043] Optionally, the carrier board includes a first end and a second end that are arranged opposite to each other; the circuit board is provided with a first terminal structure that is electrically connected to the electrical connector, and the first terminal structure is stacked and connected to the first end;

[0044] The continuous light-transmitting film structure is formed on the surface and the outer periphery of the micro-light-emitting diode device and at least a part of the surface of the packaging substrate, comprising:

[0045] The light-transmitting film structure covers the surface and the outer periphery of the packaging area extending from the first terminal structure to the second end.

[0046] Optionally, the light-transmitting film structure includes an inorganic film layer structure.

[0047] Optionally, the thickness of the light-transmitting film structure is greater than 0 nanometers and less than or equal to 200 nanometers.

[0048] Optionally, the light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

[0049] Optionally, the light-transmitting film structure is a multi-layer film structure.

[0050] Optionally, in the stacking direction of the micro light emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one group of a first film layer and a second film layer stacked;

[0051] The first film layer is located between the micro light emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

[0052] Optionally, the light-transmitting film structure is a double-layer film structure, the material of the first film layer includes tantalum pentoxide, and the material of the second film layer includes silicon dioxide.

[0053] Optionally, the light-transmitting film structure is a four-layer film structure, the material of the first film layer includes zirconium pentoxide, and the material of the second film layer includes aluminum oxide.

[0054] Optionally, the micro light emitting diode chip includes a light emitting area and a non-light emitting area;

[0055] After the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate, the packaging method further comprises:

[0056] A light shielding structure is disposed on a side of the light-transmitting film structure away from the micro-LED chip, and the orthographic projection of the light shielding structure on the light-transmitting film structure covers the orthographic projection of the non-luminous area on the light-transmitting film structure.

[0057] In a third aspect, the present application further provides a display device, comprising the packaging structure as described above; or, comprising a packaging structure prepared by the packaging method as described above.

[0058] Based on the above technical solution, the transparent film structure of the packaging structure of the present application covers the surface and outer periphery of the micro-LED device, as well as at least part of the surface of the packaging substrate. The transparent film structure can reduce the adverse effects of water vapor and other objects on the micro-LED device. The transparent film structure can encapsulate and protect the micro-LED device and improve the packaging reliability of the packaging structure. At the same time, the transparent film structure has a high light transmission effect and can improve the light transmission performance of the micro-LED device. Based on this, the present application sets a transparent film structure to realize the packaging of the micro-LED device, and the packaging structure has better packaging reliability and light transmission display performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order to more clearly illustrate the technical solution in this application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0060] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings, wherein the same figure numbers represent the same parts in the following description.

[0061] Figure 1 A schematic diagram of a first structural embodiment of the packaging structure provided in the present application;

[0062] Figure 2 for Figure 1 A schematic structural diagram of the packaging structure in another direction shown;

[0063] Figure 3 A schematic diagram of a light-transmitting film structure provided in an embodiment of the present application;

[0064] Figure 4 A schematic diagram of the refractive index of the first film layer and the second film layer of the light-transmitting film structure provided in the embodiment of the present application under different schemes;

[0065] Figure 5 A schematic diagram of the structure of a micro light emitting diode chip provided in an embodiment of the present application;

[0066] Figure 6 A schematic diagram of the structure of a driver chip provided in an embodiment of the present application;

[0067] Figure 7 A schematic diagram of the bonding connection between the driver chip and the micro light emitting diode chip provided in an embodiment of the present application;

[0068] Figure 8 A schematic diagram of the structure of a micro light emitting diode device provided in an embodiment of the present application;

[0069] Fig. 9 A schematic diagram of the structure of a packaging substrate provided in an embodiment of the present application;

[0070] Fig.10 A schematic diagram of a connection between a packaging substrate and a micro light emitting diode device provided in an embodiment of the present application;

[0071] Fig.11 A schematic diagram of the structure after the packaging substrate provided in an embodiment of the present application is connected to the micro light emitting diode device and the first substrate is removed;

[0072] Fig.12 A schematic diagram of electrical connection between a circuit board and a driver chip according to an embodiment of the present application;

[0073] Fig.13 for Fig.12 A schematic diagram of another orientation of the structure shown;

[0074] Fig.14 for Fig.12 A schematic diagram of a structure after the structure shown is filled with encapsulating colloid;

[0075] Fig.15for Fig.14 A schematic diagram of the structure in another direction of the structure shown;

[0076] Fig.16 A partial schematic diagram of a packaging structure provided in an embodiment of the present application;

[0077] Fig.17 A second structural schematic diagram of the packaging structure provided in an embodiment of the present application;

[0078] Fig.18 for Fig.17 A schematic structural diagram of the packaging structure in another direction shown;

[0079] Fig.19 A schematic diagram of the structure of another direction of the packaging structure provided in an embodiment of the present application;

[0080] Fig. 20 A schematic diagram of a first process flow of a packaging method provided in an embodiment of the present application;

[0081] Fig.21 A second schematic flow chart of the packaging method provided in the embodiment of the present application;

[0082] Fig. 22 A schematic diagram of the structure of a display device provided in an embodiment of the present application.

[0083] The reference numerals are:

[0084] 10. packaging structure; 20. display device; 100. packaging substrate; 200. micro light emitting diode device; 300. light-transmitting film structure; 400. electrical connector; 500. packaging colloid; 600. light-shielding structure; 700. reinforcing colloid; 800. reinforcing sheet; 110. carrier board; 120. circuit board; 210. micro light emitting diode chip; 220. driver chip; 230. filling structure; 240. solid crystal structure; 310. first film layer; 320. second film layer; 111. first end; 112. second end; 1 21. First terminal structure; 122. Second terminal structure; 123. Wire bonding area; 201. Light emitting area; 202. Non-light emitting area; 211. First substrate; 212. First semiconductor layer; 213. Light emitting layer; 214. Second semiconductor layer; 215. First electrode layer; 216. Second electrode layer; 217. Solder joint structure; 221. Second substrate; 222. Driving circuit; 223. Driving pad; 224. Bonding area; 301. Packaging area; 311. First part; 312. Second part; 313. Third part. DETAILED DESCRIPTION

[0085] The following will be combined with the appendix of this application Figure 1 To Attachment Fig. 22The technical solutions in this application are clearly and completely described in the following embodiments. Obviously, the described embodiments are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0086] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0087] The following is a detailed description with reference to specific embodiments. It should be noted that the embodiments of the present application can be presented in various forms, some examples of which will be described below.

[0088] Please refer to Figure 1 and Figure 2 , Figure 1 A first structural schematic diagram of a micro light emitting diode device packaging structure 10 (hereinafter referred to as packaging structure 10) provided in an embodiment of the present application is shown in FIG. Figure 2 for Figure 1 The package structure 10 is shown in another direction. The package structure 10 includes a package substrate 100 , a micro light emitting diode device 200 , and a light-transmitting film structure 300 .

[0089] The packaging substrate 100 carries the micro-LED device 200 and the light-transmitting film structure 300. The micro-LED device 200 includes a micro-LED chip 210 and a driving chip 220 which are electrically connected. The packaging substrate 100 includes a carrier board 110 and a circuit board 120 which are connected to each other. The carrier board 110 is arranged and connected to a side of the driving chip 220 which is away from the micro-LED chip 210. The micro-LED chip 210 and the driving chip 220 are sequentially stacked on the carrier board 110. The circuit board 120 is electrically connected to the driving chip 220 through an electrical connector 400. The packaging substrate 100 and the micro-LED device 200 are connected to form a micro-LED module. The light-transmitting film structure 300 is arranged on the surface and part of the outer periphery of the micro-LED module. The light-transmitting film structure 300 is an integral structure and continuously covers the surface and outer periphery of the micro-LED device 200 and at least part of the surface of the packaging substrate 100.

[0090] It can be understood that the surface and outer periphery of the micro-LED device 200 covered by the light-transmitting film structure 300 are the outer surface and outer periphery of the structure formed after the micro-LED chip 210 and the driver chip 220 are electrically connected and the two are connected to the carrier board 110; for example, the light-transmitting film structure 300 covers the side walls of the micro-LED device 200, the side walls of the driver chip 220, the outer surface of the micro-LED device 200, and the outer surface of the driver chip 220 not covered by the micro-LED device 200. Similarly, at least a portion of the surface of the packaging substrate 100 covered by the light-transmitting film structure 300 is at least a portion of the outer surface of the area of ​​the packaging substrate 100 not covered by the micro-LED device 200 after the packaging substrate 100 and the micro-LED device 200 are connected.

[0091] It is understandable that the light-transmitting film structure 300 includes an inorganic film layer structure. The material of the light-transmitting film structure 300 may include, but is not limited to, inorganic materials such as aluminum oxide (Al2O3), silicon dioxide (SiO2), and silicon nitride (Si3N2). The light-transmitting film structure 300 of the inorganic film layer structure has both excellent light transmission performance and excellent airtightness performance.

[0092] It is understandable that, in the production process, the light-transmitting film structure 300 can be formed by using a coating process on at least a portion of the surface and the outer periphery of the micro-LED module formed by connecting the micro-LED device 200 and the packaging substrate 100. For example, an inorganic film material is deposited on at least a portion of the outer periphery of the micro-LED module by using an atomic layer deposition (ALD) process to form the light-transmitting film structure 300.

[0093] It is understandable that in some examples, the light-transmitting film structure 300 is a single-layer film structure. The material of the light-transmitting film structure 300 of the single-layer film structure is Al2O3 or SiO2. The light-transmitting film structure 300 of the single-layer film structure of the embodiment of the present application has a transmittance of nearly 100% for light in the wavelength band of 530 nanometers to 540 nanometers, and the light-transmitting film structure 300 has excellent brightness performance; at the same time, the time required for the ALD process to deposit the light-transmitting film structure 300 of the single-layer film structure is short, and the production efficiency of the light-transmitting film structure 300 is high.

[0094] It is understandable that in some examples, the light-transmitting film structure 300 is a multi-layer (two or more layers) film structure. By designing the material of the multi-layer film structure, the light-transmitting film structure 300 can have a better light transmittance in a wider band (for example, the light-transmitting film structure 300 can have a transmittance of about 99% for light in the band of 450 nanometers to 700 nanometers); at the same time, the light-transmitting film structure 300 of the multi-layer film structure has a better blocking effect on moisture such as water vapor, so that the light-transmitting film structure 300 can also have better packaging performance.

[0095] In some examples, in the stacking direction of the micro-LED device 200 and the package substrate 100 (i.e., the vertical direction of the package structure 10), the light-transmitting film structure 300 includes at least one set of stacked first film layers 310 and second film layers 320. Figure 3 As shown, Figure 3 A structural schematic diagram of a light-transmitting film structure 300 provided in an embodiment of the present application is shown in FIG. Figure 3 As shown in (a), the light-transmitting film structure 300 is a double-layer film structure, and the light-transmitting film structure 300 includes a first film layer 310 and a second film layer 320. In the vertical direction of the package structure 10, the first film layer 310 is located between the micro-LED device 200 and the second film layer 320. The first film layer 310 is closer to the micro-LED device 200 and the package substrate 100, and the second film layer 320 is farther away from the micro-LED device 200 and the package substrate 100. The second film layer 320 is located on the outer surface of the entire package structure 10. For another example, the light-transmitting film structure 300 includes a first film layer 310 and a second film layer 320 that are periodically stacked, such as Figure 3 In the four-layer film structure in (b), the light-transmitting film structure 300 includes a first film layer 310, a second film layer 320, a first film layer 310, and a second film layer 320 stacked in sequence.

[0096] Among them, in the light-transmitting film structure 300 of the multi-layer film structure, the refractive index of the first film layer 310 is greater than the refractive index of the second film layer 320. For example, the first film layer 310 is a high refractive index structure with a refractive index greater than 1.5, and the second film layer 320 is a low refractive index structure with a refractive index less than 1.5. According to the following transmittance formula:

[0097]

[0098] Wherein, Y is the transmittance of the light-transmitting film structure 300. When Y=1, the best anti-reflection of the light-transmitting film structure 300 can be achieved. The closer Y is to 1, the better the transmittance performance. L is the refractive index of the first film layer 310; n H is the refractive index of the second film layer 320. S is the total number of film layers of the light-transmitting film structure 300. Figure 3 In the double-layer membrane structure shown in (a), S is 2; Figure 3 In the four-layer membrane structure shown in (b), S is 4. g is the refractive index of the micro-LED device 200, n g Generally it is 2.45.

[0099] Please combine Figure 3 Please also refer to Figure 4 , Figure 4Schematic diagram of the refractive index of the first film layer 310 and the second film layer 320 of the light-transmitting film structure 300 provided in the embodiment of the present application under different schemes. Figure 4 It can be seen that when the refractive index of the first film layer 310 is greater than the refractive index of the second film layer 320, so that the light-transmitting film structure 300 is a fixed high-refractive index material matched with a low-refractive index material, there are multiple combinations of the first film layer 310 and the second film layer 320 to make the transmittance Y of the light-transmitting film structure 300 approximately 1. For example, when the light-transmitting film structure 300 is a double-layer film structure, the first film layer 310 is niobium pentoxide (Nb2O5) or titanium dioxide (TiO2), and the second film layer 320 can be SiO2. At this time, the transmittance Y of the light-transmitting film structure 300 is close to 1, and the light-transmitting film structure 300 has a better light transmission performance. For another example, when the light-transmitting film structure 300 is a four-layer film structure, the first film layer 310 is zinc oxide (ZnO) or zirconium pentoxide (ZrO5), and the second film layer 320 can be Al2O3. At this time, the transmittance Y of the light-transmitting film structure 300 is close to 1, and the light-transmitting film structure 300 has a better light transmission performance. When the refractive index of the first film layer 310 is less than the refractive index of the second film layer 320, so that the light-transmitting film structure 300 is a fixed low refractive index material matching a high refractive index material, the refractive index of the second film layer 320 is as follows: Figure 4 As shown, the transmittance Y of the light-transmitting film structure 300 can be made close to 1.

[0100] It can be understood that, considering that the light-transmitting film structure 300 of the present application also needs to take into account the airtight performance of the package, therefore, when the light-transmitting film structure 300 is a double-layer film structure, the first film layer 310 is tantalum pentoxide (Ta2O5) and the second film layer 320 is SiO2, the light-transmitting film structure 300 has a transmittance of approximately 99% for light in the 450 nanometer to 700 nanometer band. The light-transmitting film structure 300 can take into account both the light transmittance performance of light in a wider band and the airtight performance of the package. When the light-transmitting film structure 300 is a four-layer film structure, the first film layer 310 is ZrO5 and the second film layer 320 is Al2O3, the light-transmitting film structure 300 is sequentially stacked with a ZrO5 layer, an Al2O3 layer, a ZrO5 layer, and an Al2O3 layer. At this time, the light-transmitting film structure 300 has a transmittance of approximately 99% for light in the wavelength band of 450 nanometers to 700 nanometers. The light-transmitting film structure 300 can take into account both the light transmittance performance of light in a wider wavelength band and the airtightness of the packaging.

[0101] The refractive index of the first film layer 310 of the embodiment of the present application is greater than the refractive index of the second film layer 320. According to the transmittance formula, it is easier to match the materials of the first film layer 310 and the second film layer 320 under the optimal anti-reflection conditions, and make the light-transmitting film structure 300 have better light transmittance for light in a wider band. At the same time, when the light-transmitting film structure 300 is a double-layer film structure in which the first film layer 310 is Ta2O5 and the second film layer 320 is SiO2, or the light-transmitting film structure 300 is a four-layer film structure in which the first film layer 310 is ZrO5 and the second film layer 320 is Al2O3, the light-transmitting film structure 300 can take into account both the light transmittance performance of light in a wider band and the airtightness of the package.

[0102] It is understood that in some examples, the thickness of the light-transmitting film structure 300 is greater than 0 nanometers and less than or equal to 200 nanometers. For example, the thickness of the light-transmitting film structure 300 is about 10 nanometers, 15 nanometers, 20 nanometers, 40 nanometers, 80 nanometers, 100 nanometers, 150 nanometers or 200 nanometers. The thickness of the light-transmitting film structure 300 of the present application is between 0 nanometers and 200 nanometers, which can avoid the film layer being too thick and increasing the production cost and coating time of the film layer material. At the same time, the light-transmitting film structure 300 in this thickness range also has better light transmission performance for the red light, green light or blue light emitted by the micro-LED chip 210.

[0103] For example, in the above example, when the light-transmitting film structure 300 is a single-layer film structure, if the light-transmitting film structure 300 is made of Al2O3 material, the thickness of the Al2O3 film layer can be between 90 nanometers and 100 nanometers; if the light-transmitting film structure 300 is made of SiO2 material, the thickness of the SiO2 film layer can be between 80 nanometers and 90 nanometers. When the light-transmitting film structure 300 is a double-layer film structure, the thickness of the Ta2O5 layer of the first film layer 310 is between 60 nanometers and 70 nanometers, and the thickness of the SiO2 layer of the second film layer 320 is between 90 nanometers and 100 nanometers. When the light-transmitting film structure 300 is a four-layer film structure, the thickness ranges of the ZrO5 layer, the Al2O3 layer, the ZrO5 layer, and the Al2O3 layer of the light-transmitting film structure 300 are respectively between 80 nanometers and 85 nanometers, 60 nanometers and 70 nanometers, 140 nanometers and 150 nanometers, and 30 nanometers and 35 nanometers.

[0104] The light-transmitting film structure 300 of the packaging structure 10 of the present application covers the surface and outer periphery of the micro-LED device 200, and at least part of the surface of the packaging substrate 100. The light-transmitting film structure 300 can reduce the adverse effects of water vapor and other objects on the micro-LED device 200. The light-transmitting film structure 300 can encapsulate and protect the micro-LED device 200 and improve the packaging reliability of the packaging structure 10. At the same time, the light-transmitting film structure 300 has a high light-transmitting effect and can improve the light-transmitting performance of the micro-LED device 200. In addition, when the light-transmitting film structure 300 of the present application is an inorganic film layer structure, compared with the organic packaging material, the light-transmitting film structure 300 of the inorganic film layer material has better air tightness, and the light-transmitting film structure 300 can greatly improve the reliability of the packaging structure 10; based on this, the light-transmitting film structure 300 of the present application is provided with an inorganic film layer to realize the packaging of the micro-LED device 200, and the packaging structure 10 has better packaging reliability and light-transmitting display performance. Moreover, when the carrier plate 110 is a heat dissipation substrate, the light-transmitting film structure 300 of the present application has a high light-transmitting effect and good airtight protection, the carrier plate 110 has good thermal conductivity and heat dissipation, and the packaging structure 10 of the present application can meet the requirements of light, electricity, and heat to the maximum extent, and the packaging performance is better.

[0105] Among them, in some examples, please refer to Figure 5 , Figure 5 A schematic diagram of the structure of a micro light emitting diode chip 210 provided in an embodiment of the present application is shown in FIG. Figure 5 In Figure 5 (a) and Figure 5 (b) are schematic diagrams of the structure of the micro-LED chip 210 in different directions. The micro-LED chip 210 includes a first substrate 211, and a first semiconductor layer 212, a light-emitting layer 213, a second semiconductor layer 214, a first electrode layer 215, a second electrode layer 216, and a plurality of solder joint structures 217 formed on the first substrate 211.

[0106] The first substrate 211 is used to support the film structure thereon, and the first substrate 211 is a sapphire substrate, a silicon substrate or a silicon carbide substrate, etc. The light-emitting layer 213 is a quantum well layer, for example, the light-emitting layer 213 is an indium gallium nitride quantum well layer, or an indium gallium nitride / gallium nitride multi-quantum well layer. The first semiconductor layer 212 is one of an N-type semiconductor layer and a P-type semiconductor layer, and the second semiconductor layer 214 is the other of an N-type semiconductor layer and a P-type semiconductor layer, wherein the N-type semiconductor layer is an N-type gallium nitride layer or an N-type gallium arsenide layer, and the P-type semiconductor layer is a P-type gallium nitride layer or a P-type aluminum gallium nitride layer. The first electrode layer 215 is disposed on the side of the second semiconductor layer 214 away from the light-emitting layer 213 and is electrically connected to the second semiconductor layer 214. The second electrode layer 216 is disposed in the exposed area of ​​the first semiconductor layer 212 and is electrically connected to the first semiconductor layer 212. The solder joint structure 217 is connected to the first electrode layer 215 and the second electrode layer 216. The solder joint structure 217 may be made of, but not limited to, indium (In), aluminum (Al), tin (Sn), silver (Ag), gold (Au), gold-tin alloy, nickel-gold alloy, and other metals. The solder joint structure 217 is used to bond with the driver chip 220. It should be noted that the above is only an example of the micro-LED chip 210. For example, the micro-LED chip 210 may also include a current diffusion layer, a buffer layer, and other structures.

[0107] Among them, in some examples, please refer to Figure 6 , Figure 6 A schematic diagram of the structure of the driver chip 220 provided in the embodiment of the present application is shown in FIG. Figure 6 In Figure 6 (a) and Figure 6 (b) are schematic diagrams of the structure of the driver chip 220 in different directions. The driver chip 220 includes a second substrate 221, a driver circuit 222 formed on the second substrate 221, and a plurality of driver pads 223. The driver circuit 222 may be, but not limited to, a CMOS circuit structure or a TFT circuit structure. The driver pads 223 may be, but not limited to, made of metals such as In, Al, Sn, Ag, Au, gold-tin alloy, and nickel-gold alloy.

[0108] It is understandable that, combined with Figure 6 Please also refer to Figure 7 , Figure 7The schematic diagram of the bonding connection between the driver chip 220 and the micro-LED chip 210 provided in the embodiment of the present application, wherein the multiple driver pads 223 of the driver chip 220 are used to form the bonding area 224 of the driver chip 220 and are used to be arranged one-to-one with the multiple solder joint structures 217 of the micro-LED chip 210, and bonded and connected one-to-one to achieve electrical connection, and the driver chip 220 is located between the micro-LED chip 210 and the packaging substrate 100. The driver chip 220 provides electrical signals to the micro-LED chip 210 and controls the micro-LED chip 210 to emit light.

[0109] It is understandable that if Figure 8 As shown, Figure 8 A structural schematic diagram of a micro-LED device 200 provided in an embodiment of the present application. The micro-LED device 200 may also include a filling structure 230. The micro-LED device 200 can fill the filling structure 230, such as glue, from the bonding gap between the micro-LED chip 210 and the driving chip 220 into the interior of the micro-LED device 200 and form the micro-LED device 200 of the embodiment of the present application. The filling structure 230 can be filled between multiple pixel units of the micro-LED chip 210.

[0110] It should be noted that the driver chip 220 and the micro-LED chip 210 can also have other electrical connection methods. For example, the driver chip 220 and the micro-LED chip 210 are prepared on the same substrate through a process and electrically connected through wires, flexible circuit boards, etc. In this case, the micro-LED device 200 is relatively thin.

[0111] Among them, in some examples, please refer to Fig. 9 , Fig. 9 A schematic structural diagram of a packaging substrate 100 provided in an embodiment of the present application. Fig. 9 middle Fig. 9 (a) to Fig. 9(c) is a schematic diagram of the structure of the package substrate 100 in different directions. The circuit board 120 of the package substrate 100 is stacked and connected on the carrier board 110. The carrier board 110 includes a first end 111 and a second end 112 arranged opposite to each other. The circuit board 120 is provided with a first terminal structure 121 electrically connected to the electrical connector 400, and a second terminal structure 122 electrically connected to the external circuit. The first terminal structure 121 of the circuit board 120 is stacked and connected to the first end 111 of the carrier board 110. The second terminal structure 122 of the circuit board 120 extends outside the carrier board 110 and is used to be electrically connected to the external circuit to receive the electrical signal and control signal provided by the external circuit. In some examples, the carrier board 110 is a heat dissipation substrate, which is a metal or non-metal structure. The heat dissipation substrate can increase the heat dissipation of the package structure 10. In some examples, the circuit board 120 can be a flexible board, for example, the circuit board 120 is a flexible flat cable structure. The flexible circuit board 120 is light in weight, has good reliability, and is more convenient for the transportation of the package structure 10.

[0112] It is understandable that if Fig.10 As shown, Fig.10 A schematic diagram of a connection between a package substrate 100 and a micro-LED device 200 provided in an embodiment of the present application. The micro-LED device 200 and the circuit board 120 are disposed on the same surface of the carrier board 110 and are spaced apart from each other. Figure 8 The bonding structure filled with glue is fixed on the carrier board 110 through the die-bonding structure 240, thereby achieving the connection between the driver chip 220 and the carrier board 110. The die-bonding structure 240 can be but is not limited to glue, metal welding material structure, or non-metal welding material structure.

[0113] It is understandable that if Fig.11 As shown, Fig.11 The schematic diagram of the structure of the package substrate 100 provided in the embodiment of the present application is connected to the micro-LED device 200 and the first substrate 211 is removed. After the micro-LED device 200 is connected to the carrier board 110, the first substrate 211 of the micro-LED chip 210 can be peeled off by the laser lift-off (Laser Lift-Off, LLO for short) process.

[0114] It is understandable that if Fig.12 and Fig.13 As shown, Fig.12 Schematic diagram of electrical connection between the circuit board 120 and the driver chip 220 according to the embodiment of the present application. Fig.13 for Fig.12Schematic diagram of another direction of the structure shown. After the first substrate 211 is peeled off, the driver chip 220 is electrically connected to the circuit board 120 through the electrical connector 400. For example, the first terminal structure 121 of the circuit board 120 uses a wire bonding process to connect the circuit board 120 and the driver chip 220. The electrical connector 400 realizes the electrical connection between the circuit board 120 and the driver chip 220 through the first terminal structure 121. The driver chip 220 can receive the electrical signal and control signal transmitted by the circuit board 120 and control the micro light emitting diode chip 210 to emit light. Among them, the electrical connector 400 can be, but is not limited to, a conductive gold wire, a conductive copper wire, a conductive aluminum wire and other structures.

[0115] It is understandable that, combined with Fig.12 and Fig.13 And refer to Fig.14 and Fig.15 , Fig.14 for Fig.12 The structure shown is a schematic diagram of a structure after the encapsulation colloid 500 is filled. Fig.15 for Fig.14 A schematic diagram of the structure in another direction of the structure shown. The packaging structure 10 also includes a packaging colloid 500. The packaging colloid 500 is arranged on the surface of the circuit board 120 and the surface of the driver chip 220, and the packaging colloid 500 wraps the electrical connector 400. Among them, in the process production, the periphery of the electrical connector 400 can be firstly glued to form a dam retaining wall, and then the colloid is filled in the area enclosed by the dam retaining wall to form the packaging colloid 500. The packaging colloid 500 wraps the electrical connector 400, which can minimize the corrosion of the electrical connection between the circuit board 120 and the driver chip 220 by liquids such as moisture, thereby improving the airtight layer and reliability of the packaging structure 10.

[0116] Please combine Figures 1 to 15 Please also refer to Fig.16 , Fig.16 A partial schematic diagram of a packaging structure 10 provided in an embodiment of the present application. The area between the first terminal structure 121 of the circuit board 120 of the packaging structure 10 and the second end 112 of the carrier board 110 away from the circuit board 120 forms a packaging area 301. In some examples, the light-transmitting film structure 300 covers the surface and outer periphery of the packaging area 301.

[0117] It can be understood that, in some examples, the orthographic projection of the edge of the first terminal structure 121 of the circuit board 120 away from the second end 112 on the carrier board 110 can be aligned (or approximately aligned) with the edge of the first end 111 of the carrier board 110. At this time, the orthographic projection of the light-transmitting film structure 300 on the packaging substrate 100 can cover the orthographic projection of the carrier board 110 on the packaging substrate 100, and the area of ​​the orthographic projection of the light-transmitting film structure 300 is approximately equal to the area of ​​the orthographic projection of the packaging substrate 100. The packaging area 301 is the surface and outer peripheral area of ​​the micro-LED module between the first end 111 and the second end 112 of the carrier board 110. Of course, in other examples, the orthographic projection of the edge of the first terminal structure 121 of the circuit board 120 away from the second end 112 on the carrier board 110 is located between the two ends of the carrier board 110 and closer to the first end 111.

[0118] It is understandable that during the coating process, the mask structure can be used to block areas that do not require coating (such as other areas of the circuit board 120 away from the first terminal structure 121), and then the packaging area 301 is coated to form a transparent film structure 300.

[0119] The packaging area 301 of the embodiment of the present application extends from the first terminal structure 121 of the circuit board 120 to the second end 112 of the carrier board 110. The light-transmitting film structure 300 can seal and package all the micro-light-emitting diode chips 210 and the driver chip 220, as well as the electrical connection area between the circuit board 120 and the driver chip 220, further improving the sealing performance of the packaging structure 10.

[0120] Please continue to refer to Fig.16 , the light-transmitting film structure 300 covers the encapsulating colloid 500 that wraps the electrical connector 400. At this time, the light-transmitting film structure 300 includes a first portion 311, a second portion 312, and a third portion 313 that are connected to each other, wherein the first portion 311 covers a portion of the surface of the carrier board 110, the second portion 312 covers the surface and the outer periphery of the micro-LED device 200, and the third portion 313 covers the surface and the outer periphery of the encapsulating colloid 500.

[0121] Generally speaking, the size of the micro-LED chip 210 is smaller than that of the driver chip 220, and the size of the driver chip 220 is smaller than that of the carrier board 110. When the micro-LED chip 210, the driver chip 220 and the circuit board 120 are arranged on the carrier board 110, the driver chip 220 and the carrier board 110 form a step structure, the micro-LED chip 210 and the driver chip 220 form a step structure, the circuit board 120 and the driver chip 220 are arranged at intervals, and the encapsulation colloid 500 wraps the electrical connector 400 and fills the gap between the circuit board 120 and the driver chip 220.

[0122] It can be understood that the first part 311 of the light-transmitting film structure 300 is located on the surface of the edge area of ​​the carrier board 110 that is not blocked by the driver chip 220; the second part 312 of the light-transmitting film structure 300 is connected to the first part 311 and extends along the side wall of the driver chip 220 to the surface of the edge of the driver chip 220 that is not blocked by the micro-LED chip 210, and extends along one side wall of the micro-LED chip 210 to the surface of the micro-LED chip 210, and extends to the other side wall of the micro-LED chip 210, and extends to the surface of the other side edge of the driver chip 220 that is not blocked by the micro-LED chip 210; the third part 313 of the light-transmitting film structure 300 is connected to the second part 312 and extends along one side wall of the encapsulation colloid 500 to the surface of the encapsulation colloid 500, and extends to the other side wall of the encapsulation colloid 500. In some examples, when the edge of the packaging area 301 exceeds the sidewall edge of the packaging colloid 500 , the third portion 313 of the light-transmitting film structure 300 can continue to extend to the surface of the circuit board 120 not covered by the packaging colloid 500 .

[0123] The light-transmitting film structure 300 of the embodiment of the present application covers the surface of the packaging colloid 500 , and the light-transmitting film structure 300 can further encapsulate and seal the electrical connection between the circuit board 120 and the driving chip 220 , making the electrical connection between the circuit board 120 and the driving chip 220 more reliable.

[0124] Among them, please refer to Fig.17 and Fig.18 , Fig.17 A second structural diagram of the packaging structure 10 provided in an embodiment of the present application is shown in FIG. Fig.18 for Fig.17 The schematic diagram of the structure of the package structure 10 in another direction is shown. The coating process of the transparent film structure 300 of the embodiment of the present application can be arranged before the process of filling the packaging colloid 500, so that in the vertical direction of the package structure 10, part of the transparent film structure 300 is arranged between the packaging substrate 100 and the packaging colloid 500.

[0125] It is understandable that if Fig.17 and Fig.18As shown, the first portion 311 of the light-transmitting film structure 300 is located on the surface of the edge area of ​​the carrier board 110 that is not blocked by the driver chip 220; the second portion 312 of the light-transmitting film structure 300 is connected to the first portion 311 and extends along the side wall of the driver chip 220 to the surface of the edge of the driver chip 220 that is not blocked by the micro-LED chip 210, and extends along one side wall of the micro-LED chip 210 to the surface of the micro-LED chip 210, and extends along the other side wall of the micro-LED chip 210 to the surface of the other side edge of the driver chip 220 that is not blocked by the micro-LED chip 210; the third portion 313 of the light-transmitting film structure 300 is connected to the second portion 312, and extends along the gap between the circuit board 120 and the driver chip 220 and the side wall edge of the circuit board 120 to the surface of the circuit board 120 (that is, extends to the first terminal structure 121, the present application is attached) Fig.17 It is only a schematic diagram of the light-transmitting film structure 300 . Then, a coating process is performed to fill the encapsulation colloid 500 . In the stacking direction of the micro-LED device 200 and the encapsulation substrate 100 , the encapsulation colloid 500 is located above the third portion 313 of the light-transmitting film structure 300 and covers the third portion 313 .

[0126] The coating process of the light-transmitting film structure 300 of the embodiment of the present application is formed before the process of filling the packaging colloid 500. Since the height difference among the micro-LED chip 210, the driving chip 220, and the circuit board 120 is smaller than the height difference among the packaging colloid 500, the micro-LED chip 210, the driving chip 220, and the circuit board 120, the third part 313 of the light-transmitting film structure 300 of the embodiment of the present application is arranged between the packaging substrate 100 and the packaging colloid 500. On the one hand, the area of ​​the light-transmitting film structure 300 is small, which can save the production cost of the light-transmitting film structure 300; on the other hand, the overall height difference of the light-transmitting film structure 300 is small, the connection between different parts of the light-transmitting film structure 300 is more uniform, and the sealing performance and light transmission performance of the light-transmitting film structure 300 are better.

[0127] Please refer again to Figures 1 to 18 The packaging structure 10 of the present application further includes a light shielding structure 600. The micro-LED chip 210 includes a light-emitting area 201 and a non-light-emitting area 202. The light shielding structure 600 is disposed on a side of the light-transmitting film structure 300 that is away from the micro-LED chip 210. The light shielding structure 600 is disposed opposite to the non-light-emitting area 202.

[0128] It can be understood that the non-luminous area 202 of the micro-LED chip 210 is arranged around the outer periphery of the luminous area 201, and the luminous area 201 is located inside the non-luminous area 202. The non-luminous area 202 is the electrode and wiring area of ​​the micro-LED chip 210, and the luminous area 201 is the luminous area of ​​the micro-LED chip 210; the luminous area 201 includes the luminous surface of the micro-LED chip 210 and the layered structure below the luminous surface, and the non-luminous area 202 includes the non-luminous surface of the micro-LED chip 210 and the layered structure below the luminous surface. For example, Figure 5 As shown, the first area formed by all the first electrode layers 215 and the layered structures above and below can be the light-emitting area 201 of the micro-LED chip 210; the second area formed by all the second electrode layers 216 and the layered structures above and below can be the non-light-emitting area 202 of the micro-LED chip 210.

[0129] It is understandable that the light shielding structure 600 may be, but is not limited to, a ring-shaped structure corresponding to the non-luminous area 202 . The projection of the light shielding structure 600 on the micro-LED chip 210 covers the non-luminous area 202 .

[0130] It is understandable that the light shielding structure 600 may be, but is not limited to, light shielding glue, light shielding tape, etc. In the process production, the light shielding structure 600 can be formed in the non-light emitting area 202 of the micro LED chip 210 by a glue dispensing process.

[0131] The shading structure 600 of the packaging structure 10 of the embodiment of the present application is arranged on a side of the transparent film structure 300 away from the micro-LED chip 210 and is arranged opposite to the non-luminous area 202. The shading structure 600 can reduce the light leakage rate of the micro-LED chip 210, thereby improving the display effect of the micro-LED chip 210.

[0132] Among them, please refer to Fig.19 , Fig.19 A schematic diagram of the structure of the package structure 10 provided in another direction of the embodiment of the present application. The package structure 10 of the embodiment of the present application further includes a reinforcing colloid 700. The reinforcing colloid 700 is disposed on a side of the circuit board 120 away from the micro-light emitting diode device 200, and the reinforcing colloid 700 is disposed in an area adjacent to the connection area between the carrier board 110 and the circuit board 120. The reinforcing colloid 700 can not only seal the connection gap between the carrier board 110 and the circuit board 120, but also increase the connection strength between the carrier board 110 and the circuit board 120.

[0133] Please refer again to Figures 1 to 19The circuit board 120 also includes a second terminal structure 122, which is electrically connected to the aforementioned first terminal structure 121. At the same time, the second terminal structure 122 is also electrically connected to an external circuit, and the external circuit is electrically connected to the driving chip 220 through the first terminal structure 121, the second terminal structure 122 and the electrical connector 400.

[0134] It is understandable that the second terminal structure 122 can be disposed near an end of the circuit board 120 away from the driving chip 220 , and the second terminal structure 122 can extend out of the carrier board 110 , so as to be more convenient for electrical connection with an external circuit.

[0135] It is understandable that if Figures 1 to 19 As shown, the package substrate 100 of the present application further includes a reinforcing sheet 800, and the reinforcing sheet 800 and the second terminal structure 122 are arranged on two opposite sides of the package substrate 100. For example, the second terminal structure 122 is arranged on the side of the circuit board 120 away from the micro-light emitting diode device 200, and the reinforcing sheet 800 is arranged on the side of the circuit board 120 close to the micro-light emitting diode device 200. For another example, the reinforcing sheet 800 is arranged on the side of the circuit board 120 away from the micro-light emitting diode device 200, and the second terminal structure 122 is arranged on the side of the circuit board 120 close to the micro-light emitting diode device 200. Among them, the reinforcing sheet 800 is arranged opposite to the second terminal structure 122, and the orthographic projection of the reinforcing sheet 800 on the circuit board 120 covers the orthographic projection of the second terminal structure 122 on the circuit board 120. The package substrate 100 of the embodiment of the present application is provided with the reinforcing sheet 800, and the reinforcing sheet 800 can increase the structural strength of the circuit board 120 near the second terminal structure 122.

[0136] Based on the above description, the light-transmitting film structure 300 of the inorganic film layer structure of the present application is arranged on the surface and outer periphery of the micro-light-emitting diode device 200, and at least part of the surface of the packaging substrate 100. The light-transmitting film structure 300 has better airtightness, which can greatly reduce the adverse effects of water vapor and other objects on the micro-light-emitting diode device 200. The light-transmitting film structure 300 can greatly improve the reliability of the packaging structure 10; and when the carrier board 110 is a heat dissipation substrate, the carrier board 110 has good thermal conductivity and heat dissipation. The packaging structure 10 of the present application can maximize the requirements for light, electricity, and heat, and the packaging performance is better.

[0137] Based on the description of the above packaging structure 10, the present application embodiment also provides a packaging method. Fig. 20 , Fig. 20 A first flow chart of the packaging method provided in an embodiment of the present application.

[0138] In S101 , a micro light emitting diode device 200 is provided. The micro light emitting diode device 200 includes a micro light emitting diode chip 210 and a driving chip 220 that are electrically connected.

[0139] like Figures 5 to 8 As shown, the multiple solder joint structures 217 of the micro-LED chip 210 are bonded and connected with the multiple driving pads 223 of the driving chip 220 in a one-to-one correspondence, and the micro-LED chip 210 and the driving chip 220 are electrically connected.

[0140] In S102 , a packaging substrate 100 is provided, and the packaging substrate 100 includes a carrier board 110 and a circuit board 120 connected to each other.

[0141] like Fig. 9 As shown, the carrier board 110 is a heat dissipation substrate, which can increase the heat dissipation of the package structure 10. The circuit board 120 is a flexible board, for example, the circuit board 120 is a flexible flat cable structure. The carrier board 110 can be connected to the driver chip 220 by glue, but is not limited to it.

[0142] In S103 , the micro light emitting diode chip 210 and the driving chip 220 are sequentially stacked on the carrier board 110 , and the circuit board 120 is electrically connected to the driving chip 220 via the electrical connector 400 .

[0143] like Figures 9 to 15 As shown, the micro-LED device 200 and the circuit board 120 are arranged on the same surface of the carrier board 110, and the two are spaced apart. The driving chip 220 is located between the micro-LED chip 210 and the carrier board 110. The circuit board 120 is used to be electrically connected to an external circuit. The driving chip 220 is electrically connected to the circuit board 120 through an electrical connector 400. The driving chip 220 can receive electrical signals and control signals transmitted by the circuit board 120, thereby controlling the micro-LED chip 210 to emit light.

[0144] In S104 , a continuous light-transmitting film structure 300 is formed on the surface and outer periphery of the micro light-emitting diode device 200 and at least a portion of the surface of the packaging substrate 100 , thereby forming a packaging structure 10 .

[0145] It is understandable that the light-transmitting film structure 300 includes an inorganic film layer structure. Compared with organic packaging materials, the light-transmitting film structure 300 made of inorganic film layer materials has better air tightness, which can greatly reduce the adverse effects of water vapor and other objects on the micro-LED device 200, and the light-transmitting film structure 300 can greatly improve the reliability of the packaging structure 10.

[0146] In the production process, the light-transmitting film structure 300 can be formed by depositing an inorganic film material on at least a portion of the outer periphery of the micro-LED module using an atomic layer deposition (ALD) process.

[0147] It is understandable that in some examples, the light-transmitting film structure 300 is a single-layer film structure. In some examples, the material of the light-transmitting film structure 300 with a single-layer film structure is aluminum oxide (Al2O3) or silicon dioxide (SiO2). At this time, the transmittance of the light-transmitting film structure 300 to the light in the wavelength band of 530 nanometers to 540 nanometers is close to 100%, and the light-transmitting film structure 300 has better brightness performance; at the same time, the time required for the ALD process to deposit the light-transmitting film structure 300 with a single-layer film structure is short, and the production efficiency of the light-transmitting film structure 300 is high.

[0148] It can be understood that, in some examples, the light-transmitting film structure 300 is a multilayer film structure. The light-transmitting film structure 300 includes at least one set of stacked first film layers 310 and second film layers 320. The first film layer 310 is located between the micro-light-emitting diode device 200 and the second film layer 320, and the refractive index of the first film layer 310 is greater than the refractive index of the second film layer 320. At this time, it is easier to select suitable materials for the first film layer 310 and the second film layer 320 and make the light-transmitting film structure 300 have better light transmittance.

[0149] It is understood that in some examples, when the light-transmitting film structure 300 is a double-layer film structure, the material of the first film layer 310 includes Ta2O5, and the material of the second film layer 320 includes SiO2. In this case, the light-transmitting film structure 300 has both excellent light transmittance and excellent packaging airtightness.

[0150] It is understood that in some examples, when the light-transmitting film structure 300 is a four-layer film structure, the material of the first film layer 310 includes ZrO5, and the material of the second film layer 320 includes Al2O3. In this case, the light-transmitting film structure 300 has both excellent light transmittance and excellent packaging airtightness.

[0151] It is understandable that, in some examples, the light-transmitting film structure 300 is a single-layer film structure. In other examples, the light-transmitting film structure 300 can also be a multi-layer film structure, in which at least two layers of the film structure are made of different materials, or the materials of each layer of the film structure are different. Among them, the thickness of the light-transmitting film structure 300 is greater than 0 nanometers and less than 200 nanometers. At this time, it can avoid the film layer being too thick and increasing the production cost and coating time of the film layer material. At the same time, the light-transmitting film structure 300 in this thickness range also has better light transmission performance for the red light, green light or blue light emitted by the micro-LED chip 210.

[0152] The packaging method of the present application covers the surface and outer periphery of the micro-LED device 200 and at least part of the surface of the packaging substrate 100 with a light-transmitting film structure 300. The light-transmitting film structure 300 can reduce the adverse effects of water vapor and other objects on the micro-LED device 200. The light-transmitting film structure 300 can encapsulate and protect the micro-LED device 200 and improve the packaging reliability of the packaging structure 10. At the same time, the light-transmitting film structure 300 has a high light-transmitting effect and can improve the light-transmitting performance of the micro-LED device 200. Based on this, the present application realizes the packaging of the micro-LED device 200 by setting a light-transmitting film structure 300 of an inorganic film layer, and the packaging structure 10 has better packaging reliability and light-transmitting display performance.

[0153] In some examples, before step S104, the packaging method further includes: forming a packaging colloid 500 that wraps the electrical connector 400. At this time, step S104 includes: forming a continuous light-transmitting film structure 300 on a partial surface of the packaging substrate 100, the surface and outer periphery of the micro-LED device 200, and the surface and outer periphery of the packaging colloid 500, and forming a packaging structure 10.

[0154] The light-transmitting film structure 300 of the embodiment of the present application covers the surface of the packaging colloid 500 , and the light-transmitting film structure 300 can further encapsulate and seal the electrical connection between the circuit board 120 and the driving chip 220 , making the electrical connection between the circuit board 120 and the driving chip 220 more reliable.

[0155] In some examples, step S104 includes: forming a continuous light-transmitting film structure 300 on the surface and outer periphery of the micro-light-emitting diode device 200 and at least a portion of the surface of the packaging substrate 100; forming a packaging colloid 500 that wraps the electrical connector 400, and making the packaging colloid 500 cover a portion of the light-transmitting film structure 300, and forming a packaging structure 10.

[0156] The coating process of the light-transmitting film structure 300 in the embodiment of the present application is formed before the process of filling the packaging colloid 500. The area of ​​the light-transmitting film structure 300 is small, which can save the production cost of the light-transmitting film structure 300. At the same time, the overall height difference of the light-transmitting film structure 300 is small, and the connection between different parts of the light-transmitting film structure 300 is more uniform. The sealing performance and light transmission performance of the light-transmitting film structure 300 are better.

[0157] In some examples, the carrier board 110 includes a first end 111 and a second end 112 that are arranged opposite to each other; the circuit board 120 is provided with a first terminal structure 121 that is electrically connected to the electrical connector 400, and the first terminal structure 121 is stacked and connected to the first end 111. At this time, step S104 includes: making the light-transmitting film structure 300 cover the outer periphery of the packaging area 301 extending from the first terminal structure 121 to the second end 112, and forming the packaging structure 10. It can be understood that, in some examples, step S104 also includes: making the light-transmitting film structure 300 cover the surface and outer periphery of the packaging area 301 extending from the first terminal structure 121 to the second end 112, and covering the surface and outer periphery of the packaging colloid 500, and forming the packaging structure 10. In some other examples, step S104 further includes: making the transparent film structure 300 cover the surface and outer periphery of the packaging area 301 extending from the first terminal structure 121 to the second end 112 , and making the packaging colloid 500 cover part of the transparent film structure 300 , so as to form the packaging structure 10 .

[0158] The light-transmitting film structure 300 of the embodiment of the present application can seal and package all the micro-LED chips 210 and the driver chip 220 , as well as the electrical connection area between the circuit board 120 and the driver chip 220 , further improving the sealing performance of the packaging structure 10 .

[0159] In some embodiments, the micro-LED chip 210 includes a light-emitting area 201 and a non-light-emitting area 202. The packaging method further includes: a light-shielding structure 600 is provided on a side of the light-transmitting film structure 300 that is away from the micro-LED chip 210 and directly opposite to the non-light-emitting area 202. At this time, the light-shielding structure 600 can reduce the light leakage rate of the micro-LED chip 210, thereby improving the display effect of the micro-LED chip 210.

[0160] In some embodiments, the packaging method further includes: disposing a reinforcing colloid 700 in an area adjacent to a connection area between the circuit board 120 and the carrier board 110 on a side of the circuit board 120 away from the micro-LED device 200. The reinforcing colloid 700 can not only seal the connection gap between the carrier board 110 and the circuit board 120, but also increase the connection strength between the carrier board 110 and the circuit board 120.

[0161] Based on the above description, please refer to Fig.21 , Fig.21 A second flow chart of the packaging method provided in an embodiment of the present application.

[0162] In S201 , a micro light emitting diode device 200 is provided. The micro light emitting diode device 200 includes a micro light emitting diode chip 210 and a driving chip 220 that are bonded together.

[0163] like Figures 5 to 8 As shown, the multiple solder joint structures 217 of the micro-LED chip 210 are bonded and connected with the multiple driving pads 223 of the driving chip 220 in a one-to-one correspondence, and the micro-LED chip 210 and the driving chip 220 are bonded and connected.

[0164] In S202 , a packaging substrate 100 is provided, and the packaging substrate 100 includes a carrier board 110 and a circuit board 120 connected to each other.

[0165] like Fig. 9 As shown, the carrier board 110 is a heat dissipation substrate. The circuit board 120 is a flexible board, for example, the circuit board 120 is a flexible flat cable structure.

[0166] In S203 , the micro LED chip 210 and the driving chip 220 are sequentially stacked on the carrier board 110 .

[0167] like Fig.10 and Fig.11 As shown, the carrier board 110 is connected to the driver chip 220 through the die bonding structure 240. The micro-LED device 200 and the circuit board 120 are arranged on the same surface of the carrier board 110 and are spaced apart. The driver chip 220 is located between the micro-LED chip 210 and the carrier board 110.

[0168] In S204 , the first substrate 211 of the micro light emitting diode chip 210 is removed.

[0169] like Fig.11 As shown, this step may be, but is not limited to, peeling off the first substrate 211 of the micro light emitting diode chip 210 through the LLO production process.

[0170] In S205 , the circuit board 120 is electrically connected to the driving chip 220 via the electrical connector 400 .

[0171] like Fig.10 and Fig.11 As shown, after the first substrate 211 is peeled off, the circuit board 120 and the driver chip 220 are connected by a wire bonding process in this step. The driver chip 220 can receive the electrical signal and control signal transmitted by the circuit board 120, thereby controlling the micro light emitting diode chip 210 to emit light.

[0172] In S206 , a packaging resin 500 is formed to wrap the electrical connection member 400 .

[0173] like Figures 13 to 15As shown, a welding wire area 123 is preset on the circuit board 120. In this step, glue is first dispensed around the electrical connector 400 to form a dam wall, and then colloid is filled in the dam wall area to form a packaging colloid 500. The packaging colloid 500 wraps the electrical connector 400, which can minimize the corrosion of the electrical connection between the circuit board 120 and the driver chip 220 by liquids such as moisture, thereby improving the airtight layer and reliability of the packaging structure 10 of the micro light emitting diode device 200.

[0174] In S207 , a continuous light-transmitting film structure 300 is formed on a portion of the surface of the packaging substrate 100 , the surface and outer periphery of the micro light-emitting diode device 200 , and the surface and outer periphery of the packaging colloid 500 .

[0175] In the production process, the light-transmitting film structure 300 can be formed by depositing an inorganic film layer material on at least a portion of the surface and the outer periphery of the micro-LED module using an ALD process.

[0176] In S208 , a light shielding structure 600 is disposed on a side of the light-transmitting film structure 300 that is away from the micro-LED chip 210 and directly opposite to the non-light-emitting area 202 ;

[0177] In the production process, the light shielding structure 600 can be formed in the non-light emitting area 202 of the micro LED chip 210 by using a dispensing process.

[0178] In S209 , a reinforcing colloid 700 is disposed on a surface of the circuit board 120 away from the micro light emitting diode device 200 and in an area adjacent to a connection area between the circuit board 120 and the carrier board 110 , and a packaging structure 10 is formed.

[0179] like Fig.19 As shown, a reinforcing colloid 700 is disposed in an area adjacent to the connection area between the circuit board 120 and the carrier board 110 on a side of the circuit board 120 away from the micro-LED device 200 by a dispensing process, and a packaging structure 10 is formed.

[0180] It is understandable that if Fig.21 As shown, between step S205 and step S208, step S210 may also be included: forming a continuous light-transmitting film structure 300 on the surface and outer periphery of the micro-light-emitting diode device 200 and at least a portion of the surface of the packaging substrate 100; step S211: forming a packaging colloid 500 that wraps the electrical connector 400, and allowing the packaging colloid 500 to cover a portion of the light-transmitting film structure 300.

[0181] Based on the above description, the packaging method of the present application forms a transparent film structure 300 of a continuous inorganic film layer structure on the outer periphery of the micro-LED device 200 and part of the outer periphery of the packaging substrate 100. The transparent film structure 300 has better air tightness, which can greatly reduce the adverse effects of water vapor and other objects on the micro-LED device 200. The transparent film structure 300 can greatly improve the reliability of the packaging structure 10; and when the transparent film structure 300 of the present application covers the surface of the packaging colloid 500, the transparent film structure 300 can further encapsulate and seal the electrical connection between the circuit board 120 and the driver chip 220, and the electrical connection between the circuit board 120 and the driver chip 220 is more reliable. When part of the transparent film structure 300 is located below the packaging colloid 500 and is covered by the packaging colloid 500, the production cost of the transparent film structure 300 is low, and the sealing performance and light transmission performance of the transparent film structure 300 are both better. Therefore, the production process of the transparent film structure 300 of the present application is more flexible and more conducive to the process production of the packaging structure 10. Based on this, the present application realizes the packaging of the micro-LED device 200 by setting the transparent film structure 300 of the inorganic film layer, and the packaging structure 10 has better packaging reliability and transparent display performance.

[0182] Based on the above description, the present application embodiment further provides a display device 20, please refer to Fig. 22 , Fig. 22 A structural schematic diagram of a display device 20 provided in an embodiment of the present application. The display device 20 can be applied to electronic devices to realize extended reality (Extended Reality, XR) technologies such as augmented reality (AR), virtual reality (VR), and mixed reality (MR). In implementation, the display device 20 can be the projection part of an electronic device, such as a projector, a head-up display (HUD), etc.; for another example, the display device 20 can also be the display part of an electronic device, for example, the electronic device can include: any device with a display screen, such as a smart phone, a smart watch, a laptop computer, a tablet computer, a driving recorder, a navigator, a head-mounted device, etc.; for another example, the display device 20 can also be the lighting part of an electronic device, for example, the electronic device can include: any device with a lighting component, such as a vehicle and a street lamp.

[0183] It is understandable that the display device 20 of the embodiment of the present application includes the packaging structure 10 of any of the above embodiments, or includes the packaging structure 10 prepared by the packaging method of any of the above embodiments. Therefore, the display device 20 of the present application has better packaging integrity, high reliability and good aesthetics.

[0184] It should be noted that the packaging structure 10, packaging method, and display device 20 of the embodiments of the present application are different subjects under the same inventive concept. For features not described in detail in each embodiment, reference can be made to the description in other embodiments.

[0185] It should be noted that the "multiple" mentioned in this application generally refers to two or more. Moreover, the directional terms mentioned in the embodiments of the present application, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the embodiments of the present application, rather than to limit the embodiments of the present application. In the various drawings, units with similar structures are represented by the same figure numbers. For clarity, the various parts in the drawings are not drawn to scale. In addition, certain related parts may not be shown in the drawings.

[0186] It should be understood that, in the description of this application, terms such as "first", "second", etc. are only used to distinguish similar objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0187] It is understandable that those skilled in the art can combine various implementations in the above embodiments under the guidance of the above embodiments to obtain technical solutions of multiple implementations. The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0188] The above is a detailed introduction to the micro-LED device packaging structure, packaging method and display device provided by the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A micro light emitting diode device packaging structure, characterized in that: include: A micro light emitting diode device, comprising an electrically connected micro light emitting diode chip and a driver chip; The packaging substrate comprises a carrier plate and a circuit board connected to each other, the micro light emitting diode chip and the driver chip are sequentially stacked on the carrier plate, and the circuit board is electrically connected to the driver chip through an electrical connector; and The light-transmitting film structure continuously covers the surface and the outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate.

2. The packaging structure according to claim 1, characterized in that: The packaging structure further includes: The encapsulating colloid wraps the electrical connector; wherein, The light-transmitting film structure includes a first part, a second part and a third part that are connected, wherein the first part covers a portion of the surface of the carrier board, and the second part covers the surface and the outer periphery of the micro-light-emitting diode device; the third part covers the surface and the outer periphery of the packaging colloid, or, in the stacking direction of the micro-light-emitting diode device and the packaging substrate, the third part is arranged between the packaging substrate and the packaging colloid.

3. The packaging structure according to claim 1, characterized in that: The carrier board includes a first end and a second end that are arranged opposite to each other; the circuit board is provided with a first terminal structure that is electrically connected to the electrical connector, and the first terminal structure is stacked and connected to the first end; wherein, The packaging structure includes a packaging area extending from the first terminal structure to the second end, and the light-transmitting film structure covers a surface and an outer periphery of the packaging area.

4. The packaging structure according to claim 3, characterized in that: The packaging structure further includes: The encapsulating colloid wraps the electrical connector; wherein, The light-transmitting film structure covers the packaging colloid; or, in the stacking direction of the micro-LED device and the packaging substrate, part of the light-transmitting film structure is arranged between the packaging substrate and the packaging colloid.

5. The packaging structure according to claim 1, characterized in that: The light-transmitting film structure includes an inorganic film layer structure.

6. The packaging structure according to claim 1, characterized in that: The thickness of the light-transmitting film structure is greater than 0 nanometer and less than or equal to 200 nanometers.

7. The packaging structure according to claim 1, characterized in that: The light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

8. The packaging structure according to claim 1, characterized in that: The light-transmitting film structure is a multi-layer film structure.

9. The packaging structure according to claim 8, characterized in that: In the stacking direction of the micro light emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one group of first film layers and second film layers stacked in layers; The first film layer is located between the micro light emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

10. The packaging structure according to claim 9, characterized in that: The light-transmitting film structure is a double-layer film structure, the material of the first film layer includes tantalum pentoxide, and the material of the second film layer includes silicon dioxide.

11. The packaging structure according to claim 9, characterized in that: The light-transmitting film structure is a four-layer film structure, the material of the first film layer includes zirconium pentoxide, and the material of the second film layer includes aluminum oxide.

12. The packaging structure according to any one of claims 1 to 11, characterized in that: The micro light emitting diode chip includes a light emitting area and a non-light emitting area; The packaging structure further includes: The shading structure is arranged on a side of the light-transmitting film structure away from the micro-LED chip, and the orthographic projection of the light-shielding structure on the light-transmitting film structure covers the orthographic projection of the non-luminous area on the light-transmitting film structure.

13. The packaging structure according to any one of claims 1 to 11, characterized in that: The packaging structure further includes: The reinforcing colloid is arranged on a side of the circuit board away from the micro-light emitting diode device and in an area adjacent to a connection area between the circuit board and the carrier board.

14. The packaging structure according to any one of claims 1 to 11, characterized in that: The packaging substrate further includes a reinforcing sheet and a second terminal structure disposed on two opposite sides of the circuit board, wherein a projection of the reinforcing sheet on the circuit board covers a projection of the second terminal structure on the circuit board.

15. A method for packaging a micro light emitting diode device, characterized in that: include: A micro light emitting diode device is provided, wherein the micro light emitting diode device comprises a micro light emitting diode chip and a driving chip which are electrically connected; Providing a packaging substrate, the packaging substrate comprising a carrier plate and a circuit board connected to each other; The micro light emitting diode chip and the driver chip are sequentially stacked on the carrier board, and the circuit board is electrically connected to the driver chip through an electrical connector; A continuous light-transmitting film structure is formed on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate, and a micro-LED device packaging structure is formed.

16. The packaging method according to claim 15, characterized in that: Before the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate, the packaging method further comprises: forming a packaging colloid that wraps the electrical connector; The continuous light-transmitting film structure is formed on the surface and the outer periphery of the micro-light-emitting diode device and at least a part of the surface of the packaging substrate, comprising: A continuous light-transmitting film structure is formed on a part of the surface of the carrier board, the surface and outer periphery of the micro-LED device, and the surface and outer periphery of the packaging colloid, and a micro-LED device packaging structure is formed.

17. The packaging method according to claim 15, characterized in that: The method of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-light-emitting diode device and at least a portion of the surface of the packaging substrate to form a micro-light-emitting diode device packaging structure includes: forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate; A packaging colloid is formed to wrap the electrical connector, and the packaging colloid covers a portion of the light-transmitting film structure to form a micro-light-emitting diode device packaging structure.

18. The packaging method according to claim 15, characterized in that: The carrier board comprises a first end and a second end which are arranged opposite to each other; the circuit board is provided with a first terminal structure which is electrically connected to the electrical connector, and the first terminal structure is stacked and connected to the first end; The continuous light-transmitting film structure is formed on the surface and the outer periphery of the micro-light-emitting diode device and at least a part of the surface of the packaging substrate, comprising: The light-transmitting film structure covers the surface and the outer periphery of the packaging area extending from the first terminal structure to the second end.

19. The packaging method according to claim 15, characterized in that: The light-transmitting film structure includes an inorganic film layer structure.

20. The packaging method according to claim 15, characterized in that: The thickness of the light-transmitting film structure is greater than 0 nanometer and less than or equal to 200 nanometers.

21. The packaging method according to claim 15, characterized in that: The light-transmitting film structure is a single-layer film structure, and the material of the light-transmitting film structure includes aluminum oxide or silicon dioxide.

22. The packaging method according to claim 15, characterized in that: The light-transmitting film structure is a multi-layer film structure.

23. The packaging method according to claim 22, characterized in that: In the stacking direction of the micro light emitting diode device and the packaging substrate, the light-transmitting film structure includes at least one group of first film layers and second film layers stacked in layers; The first film layer is located between the micro light emitting diode device and the second film layer, and the refractive index of the first film layer is greater than that of the second film layer.

24. The packaging method according to claim 23, characterized in that: The light-transmitting film structure is a double-layer film structure, the material of the first film layer includes tantalum pentoxide, and the material of the second film layer includes silicon dioxide.

25. The packaging method according to claim 23, characterized in that: The light-transmitting film structure is a four-layer film structure, the material of the first film layer includes zirconium pentoxide, and the material of the second film layer includes aluminum oxide.

26. The packaging method according to any one of claims 15 to 25, characterized in that: The micro light emitting diode chip includes a light emitting area and a non-light emitting area; After the step of forming a continuous light-transmitting film structure on the surface and outer periphery of the micro-LED device and at least a portion of the surface of the packaging substrate, the packaging method further comprises: A light shielding structure is disposed on a side of the light-transmitting film structure away from the micro-LED chip, and the orthographic projection of the light shielding structure on the light-transmitting film structure covers the orthographic projection of the non-luminous area on the light-transmitting film structure.

27. A display device, characterized in that: The display device comprises the packaging structure according to any one of claims 1 to 14; or, the display device comprises the packaging structure prepared by the packaging method according to any one of claims 15 to 26.

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