Preparation method of silicon-based OLED strong microcavity anode
By using a dry etching process in silicon-based OLED devices to form a stacked metal electrode layer and transparent conductive layer, the problems of complexity and low efficiency of anode manufacturing in traditional silicon-based OLED devices are solved, and high brightness and high color are achieved Reduced effectiveness and cost of the domain.
Patent Information
- Application Number
- CN202411351697.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-26
- Publication Date
- 2024-12-31
AI Technical Summary
The anode of traditional silicon-based OLED devices adopts a single-layer structure with the same thickness. The manufacturing process is simple but cannot meet the requirements of high brightness and high color gamut. The manufacturing process of traditional microcavity structures is complex, resulting in low yield and low production capacity.
A silicon-based OLED strong microcavity anode is prepared by a dry etching process, and a layered metal electrode layer and a transparent conductive layer are formed, and a transparent conductive layer of different thicknesses is used to achieve different cavity lengths, simplifying the process flow. Improve yield and production capacity.
It effectively protects the transparent electrode layer material, reduces the process flow, improves yield and production capacity, reduces the preparation cost, and meets the requirements of high brightness and high color gamut.
Smart Images
Figure CN119233739A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of semiconductor technology, and in particular to a method for preparing a silicon-based OLED strong microcavity anode. Background Art
[0002] Silicon is an important semiconductor integrated circuit material, but because silicon is an indirect bandgap material with low luminescence efficiency, in order to achieve optoelectronic integration on silicon wafers, in the past few decades, people have carried out a lot of research on silicon-based luminescent materials and devices, such as integrating luminescent materials on silicon substrates or making porous silicon. In recent years, the production of OLEDs (Organic light emitting diodes) on silicon substrates has opened up a new path for silicon-based optoelectronic integration. Moreover, silicon-based OLEDs can use mature CMOS technology to integrate high-density and complex circuits on a single chip, thus providing a single-chip display system solution.
[0003] At present, the anode of silicon-based OLED devices generally adopts a single-layer structure with the same thickness. The manufacturing process is relatively simple and can no longer meet the requirements of high brightness and high color gamut. In order to further improve the efficiency and light color of OLED devices, a device structure with strong microcavity resonance will be adopted, that is, the thickness of the R / G / B sub-pixel anode is different, so as to obtain different cavity lengths to match the wavelengths of different RGB colors. The traditional microcavity structure manufacturing process is complicated and involves multiple etchings, resulting in low yield and low production capacity. Summary of the invention
[0004] In view of this, the purpose of the present invention is to provide a method for preparing a silicon-based OLED strong microcavity anode. The present invention uses only one dry etching process, effectively protects the transparent electrode layer material, reduces the process flow, and improves the yield and production capacity.
[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:
[0006] The present invention provides a method for preparing a silicon-based OLED strong microcavity anode, wherein the silicon-based OLED strong microcavity anode comprises a silicon-based substrate 100 and N pixel regions located on the surface of the substrate, wherein N≥1, the pixel region comprises a metal electrode layer 200 and a transparent conductive layer stacked, the metal electrode layer 200 is in contact with the silicon-based substrate 100, the pixel region comprises a first sub-pixel region, a second sub-pixel region and a third sub-pixel region which are arranged at intervals, the thicknesses of the transparent conductive layers in the first sub-pixel region, the second sub-pixel region and the third sub-pixel region are all different, and the transparent conductive layer comprises a transparent conductive layer 3-1 in the first sub-pixel region, a transparent conductive layer 3-2 in the second sub-pixel region and a transparent conductive layer 3-3 in the third sub-pixel region;
[0007] The following steps are involved:
[0008] Deposition is performed on the surface of the silicon-based substrate 100 to obtain a metal electrode deposition layer 200-1;
[0009] On the surface of the metal electrode deposition layer 200-1, a first transparent conductive layer material deposition, a first photoresist coating and a first exposure and development are sequentially performed to retain the photoresist on the first sub-pixel area, and then a second transparent conductive layer material deposition, a second photoresist coating and a second exposure and development are sequentially performed to retain the photoresist on the second sub-pixel area, and then a third transparent conductive layer material deposition, a third photoresist coating and a third exposure and development are sequentially performed to retain the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, and the transparent conductive layer material between the first sub-pixel area, the second sub-pixel area and the third sub-pixel area and the metal electrode deposition layer 200-1 are removed by dry etching to form the metal electrode layer 200, and then the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are removed, and the transparent conductive layer material on the surface of the photoresist is stripped off to obtain the silicon-based OLED strong microcavity anode.
[0010] Preferably, the material of the transparent conductive layer is conductive metal oxide.
[0011] Preferably, the conductive metal oxide includes indium tin oxide and / or indium zinc oxide.
[0012] Preferably, the transparent conductive layer 3 - 1 in the first sub-pixel region, the transparent conductive layer 3 - 2 in the second sub-pixel region and the transparent conductive layer 3 - 3 in the third sub-pixel region are made of the same material.
[0013] Preferably, the silicon-based substrate 100 is a bare silicon substrate or a circuit-containing silicon substrate.
[0014] Preferably, the material of the metal electrode layer 200 includes one or more of Al, Ag, TiN and Ti.
[0015] Preferably, the metal electrode layer 200 is a single-layer thin film or a multi-layer composite thin film.
[0016] Preferably, the first coating photoresist, the second coating photoresist and the third coating photoresist are all made of PR glue.
[0017] Preferably, the method of removing the photoresist on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region is wet stripping.
[0018] The present invention provides a method for preparing a silicon-based OLED strong microcavity anode, wherein the silicon-based OLED strong microcavity anode comprises a silicon-based substrate 100 and N pixel areas located on the surface of the substrate, wherein N≥1, the pixel area comprises a stacked metal electrode layer 200 and a transparent conductive layer, the metal electrode layer 200 is in contact with the silicon-based substrate 100, the pixel area comprises a first sub-pixel area, a second sub-pixel area and a third sub-pixel area arranged at intervals, the thicknesses of the transparent conductive layers in the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are all different, the transparent conductive layer comprises a transparent conductive layer 3-1 in the first sub-pixel area, a transparent conductive layer 3-2 in the second sub-pixel area and a transparent conductive layer 3-3 in the third sub-pixel area; the method comprises the following steps: depositing on the surface of the silicon-based substrate 100 to obtain a metal electrode deposition layer 200-1; depositing on the metal electrode deposition layer 20 The surface of 0-1 is sequentially subjected to the first transparent conductive layer material deposition, the first photoresist coating and the first exposure and development, and the photoresist on the first sub-pixel area is retained. Then, the second transparent conductive layer material deposition, the second photoresist coating and the second exposure and development are sequentially performed, and the photoresist on the second sub-pixel area is retained. Then, the third transparent conductive layer material deposition, the third photoresist coating and the third exposure and development are sequentially performed, and the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area is retained. The transparent conductive layer material between the first sub-pixel area, the second sub-pixel area and the third sub-pixel area and the metal electrode deposition layer 200-1 are removed by dry etching to form the metal electrode layer 200, and then the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area is removed, and the transparent conductive layer material on the surface of the photoresist is stripped off to obtain the silicon-based OLED strong microcavity anode.
[0019] Compared with the prior art, the present invention has the following beneficial effects:
[0020] The present invention proposes a method for preparing a silicon-based OLED strong microcavity anode, which uses only one dry etching process, effectively protects the transparent electrode layer material, reduces the process flow, improves the yield and production capacity, and reduces the preparation cost. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 This is a schematic diagram of the structure of a strong microcavity anode for silicon-based OLED;
[0022] Figure 2 The preparation flow chart of silicon-based OLED strong microcavity anode.
[0023] In the figure, 100 is a silicon-based substrate, 200 is a metal electrode layer, 200-1 is a metal electrode deposition layer, 3-1 is a transparent conductive layer in the first sub-pixel area, 3-2 is a transparent conductive layer in the second sub-pixel area, 3-3 is a transparent conductive layer in the third sub-pixel area, 300 is a first transparent conductive layer material, 310 is a second transparent conductive layer material, 320 is a third transparent conductive layer material, 400 is a first photoresist, 410 is a second photoresist, and 420 is a third photoresist. DETAILED DESCRIPTION
[0024] The present invention provides a method for preparing a silicon-based OLED strong microcavity anode, wherein the silicon-based OLED strong microcavity anode comprises a silicon-based substrate 100 and N pixel regions located on the surface of the substrate, wherein N≥1, the pixel region comprises a metal electrode layer 200 and a transparent conductive layer stacked, the metal electrode layer 200 is in contact with the silicon-based substrate 100, the pixel region comprises a first sub-pixel region, a second sub-pixel region and a third sub-pixel region which are arranged at intervals, the thicknesses of the transparent conductive layers in the first sub-pixel region, the second sub-pixel region and the third sub-pixel region are all different, and the transparent conductive layer comprises a transparent conductive layer 3-1 in the first sub-pixel region, a transparent conductive layer 3-2 in the second sub-pixel region and a transparent conductive layer 3-3 in the third sub-pixel region;
[0025] The following steps are involved:
[0026] Deposition is performed on the surface of the silicon-based substrate 100 to obtain a metal electrode deposition layer 200-1;
[0027] On the surface of the metal electrode deposition layer 200-1, a first transparent conductive layer material deposition, a first photoresist coating and a first exposure and development are sequentially performed to retain the photoresist on the first sub-pixel area, and then a second transparent conductive layer material deposition, a second photoresist coating and a second exposure and development are sequentially performed to retain the photoresist on the second sub-pixel area, and then a third transparent conductive layer material deposition, a third photoresist coating and a third exposure and development are sequentially performed to retain the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, and the transparent conductive layer material between the first sub-pixel area, the second sub-pixel area and the third sub-pixel area and the metal electrode deposition layer 200-1 are removed by dry etching to form the metal electrode layer 200, and then the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are removed, and the transparent conductive layer material on the surface of the photoresist is stripped off to obtain the silicon-based OLED strong microcavity anode.
[0028] Figure 1Schematic diagram of the structure of the silicon-based OLED strong microcavity anode, in which 100 is a silicon-based substrate, 200 is a metal electrode layer, 3-1 is a transparent conductive layer in the first sub-pixel region, 3-2 is a transparent conductive layer in the second sub-pixel region, and 3-3 is a transparent conductive layer in the third sub-pixel region. Figure 1 The structure of the silicon-based OLED strong microcavity anode of the present invention is described.
[0029] The silicon-based OLED strong microcavity anode of the present invention includes a silicon-based substrate 100 .
[0030] In the present invention, the silicon-based substrate 100 is preferably a bare silicon substrate or a silicon substrate containing a circuit, and the silicon substrate containing a circuit is more preferably a silicon substrate containing a complementary metal oxide semiconductor (CMOS) circuit.
[0031] The silicon-based OLED strong microcavity anode of the present invention includes N pixel areas located on the surface of the silicon-based substrate 100, wherein N≥1, the pixel area includes a metal electrode layer 200 and a transparent conductive layer stacked, the metal electrode layer 200 is in contact with the silicon-based substrate 100, the pixel area includes a first sub-pixel area, a second sub-pixel area and a third sub-pixel area arranged at intervals, the thicknesses of the transparent conductive layers in the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are all different, and the transparent conductive layer includes a transparent conductive layer 3-1 in the first sub-pixel area, a transparent conductive layer 3-2 in the second sub-pixel area and a transparent conductive layer 3-3 in the third sub-pixel area.
[0032] In the present invention, the material of the transparent conductive layer is preferably conductive metal oxide.
[0033] In the present invention, the conductive metal oxide preferably includes indium tin oxide (ITO) and / or indium zinc oxide (IZO).
[0034] In the present invention, the transparent conductive layer 3 - 1 in the first sub-pixel region, the transparent conductive layer 3 - 2 in the second sub-pixel region, and the transparent conductive layer 3 - 3 in the third sub-pixel region are preferably made of the same material.
[0035] In the present invention, the material of the metal electrode layer 200 preferably includes one or more of Al, Ag, TiN and Ti.
[0036] In the present invention, the metal electrode layer 200 is preferably a single-layer film or a multi-layer composite film.
[0037] In the present invention, the number of layers of the multilayer composite film is preferably ≥3, and the multilayer composite film is preferably composed of two or more materials selected from the group consisting of Al, Ag, TiN and Ti.
[0038] Figure 2The preparation flow chart of the strong microcavity anode of silicon-based OLED is shown below. Figure 2 The preparation method of the present invention is described. In the figure, 200-1 is a metal electrode deposition layer, 300 is a first transparent conductive layer material, 310 is a second transparent conductive layer material, 320 is a third transparent conductive layer material, 400 is a first photoresist, 410 is a second photoresist, and 420 is a third photoresist.
[0039] The present invention performs deposition on the surface of the silicon-based substrate 100 to obtain a metal electrode deposition layer 200 - 1 .
[0040] After obtaining the metal electrode deposition layer 200-1, the present invention deposits a first transparent conductive layer material on the surface of the metal electrode deposition layer 200-1 to form a first transparent conductive layer material 300, then performs a first photoresist coating to form a first photoresist 400, then performs a first exposure and development to retain the photoresist on the first sub-pixel area, then deposits a second transparent conductive layer material to form a second transparent conductive layer material 310, then performs a second photoresist coating to form a second photoresist 410, then performs a second exposure and development to retain the photoresist on the second sub-pixel area, and then deposits a third transparent conductive layer material to form a A third transparent conductive layer material 320 is formed, and then a third photoresist is coated to form a third photoresist 420, and then a third exposure and development is performed to retain the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, and the transparent conductive layer material and the metal electrode deposition layer 200-1 between the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are removed by dry etching to form the metal electrode layer 200, and then the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area is removed, and the transparent conductive layer material on the surface of the photoresist is stripped off to obtain the silicon-based OLED strong microcavity anode.
[0041] In the present invention, the first coating photoresist, the second coating photoresist and the third coating photoresist are preferably PR glue. The present invention has no special limitation on the specific parameters of the first coating photoresist, the second coating photoresist and the third coating photoresist, and can be used in a manner well known to those skilled in the art.
[0042] In the present invention, the method for removing the photoresist on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region is preferably wet stripping. The present invention has no special limitation on the specific parameters of the wet stripping, and a method well known to those skilled in the art can be used.
[0043] In the present invention, the deposition, the deposition of the first transparent conductive layer material, the deposition of the second transparent conductive layer material and the deposition of the third transparent conductive layer material are preferably evaporation, physical vapor deposition (PVD), atomic layer deposition (ALD) or chemical vapor deposition (CVD). The present invention has no special limitation on the specific parameters of the deposition, and a method well known to those skilled in the art can be used.
[0044] The present invention has no special limitation on the specific parameters of the first exposure and development, the second exposure and development, and the third exposure and development, and methods well known to those skilled in the art may be used.
[0045] The present invention has no special limitation on the specific parameters of the dry etching, and a method familiar to those skilled in the art may be used.
[0046] The technical solutions in the present invention will be described clearly and completely below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0047] Example 1
[0048] Preparation with Figure 1 The silicon-based OLED strong microcavity anode with the structure shown in the figure is as follows Figure 2 As shown, the specific steps are as follows:
[0049] Step 1. Deposit metal electrode Al on the silicon substrate with CMOS circuit;
[0050] Step 2. Deposit a transparent conductive layer ITO on the metal electrode Al;
[0051] Step 3. Apply a layer of photoresist PR on ITO;
[0052] Step 4. Expose and develop the structure in Step 3, and retain the photoresist on the first sub-pixel area;
[0053] Step 5. Continue to deposit the transparent conductive layer ITO;
[0054] Step 6. Apply a layer of photoresist PR on ITO;
[0055] Step 7. Expose and develop the structure in Step 6, and retain the photoresist on the second sub-pixel area;
[0056] Step 8. Continue to deposit the transparent conductive layer ITO;
[0057] Step 9. Apply a layer of photoresist PR on ITO;
[0058] Step 10. Expose and develop the structure in Step 9, while retaining the photoresist on the first, second and third sub-pixel regions;
[0059] Step 11. Etch away the transparent conductive layer ITO and the metal electrode Al between the first, second and third sub-pixel regions using dry etching technology;
[0060] Step 12. Use wet stripping technology to remove the photoresist in the Step 11 structure, and at the same time peel off the transparent conductive layer material Al on the photoresist to obtain a silicon-based OLED strong microcavity anode.
[0061] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.
Claims
1. A method for preparing a silicon-based OLED strong microcavity anode, characterized in that: The silicon-based OLED strong microcavity anode comprises a silicon-based substrate (100) and N pixel regions located on the surface of the substrate, wherein N≥1, the pixel region comprises a metal electrode layer (200) and a transparent conductive layer arranged in a stacked manner, the metal electrode layer (200) is in contact with the silicon-based substrate (100), the pixel region comprises a first sub-pixel region, a second sub-pixel region and a third sub-pixel region arranged at intervals, the thicknesses of the transparent conductive layers of the first sub-pixel region, the second sub-pixel region and the third sub-pixel region are all different, and the transparent conductive layer comprises a transparent conductive layer (3-1) of the first sub-pixel region, a transparent conductive layer (3-2) of the second sub-pixel region and a transparent conductive layer (3-3) of the third sub-pixel region; The following steps are involved: Depositing on the surface of the silicon-based substrate (100) to obtain a metal electrode deposition layer (200-1); On the surface of the metal electrode deposition layer (200-1), a first transparent conductive layer material deposition, a first photoresist coating and a first exposure and development are sequentially performed to retain the photoresist on the first sub-pixel area, then a second transparent conductive layer material deposition, a second photoresist coating and a second exposure and development are sequentially performed to retain the photoresist on the second sub-pixel area, then a third transparent conductive layer material deposition, a third photoresist coating and a third exposure and development are sequentially performed to retain the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area, and the transparent conductive layer material between the first sub-pixel area, the second sub-pixel area and the third sub-pixel area and the metal electrode deposition layer (200-1) are removed by dry etching to form the metal electrode layer (200), then the photoresist on the first sub-pixel area, the second sub-pixel area and the third sub-pixel area are removed, and the transparent conductive layer material on the surface of the photoresist is stripped off to obtain the silicon-based OLED strong microcavity anode.
2. The preparation method according to claim 1, characterized in that: The material of the transparent conductive layer is conductive metal oxide.
3. The preparation method according to claim 2, characterized in that: The conductive metal oxide includes indium tin oxide and / or indium zinc oxide.
4. The preparation method according to claim 1 or 2, characterized in that: The transparent conductive layer (3-1) of the first sub-pixel region, the transparent conductive layer (3-2) of the second sub-pixel region and the transparent conductive layer (3-3) of the third sub-pixel region are made of the same material.
5. The preparation method according to claim 1, characterized in that: The silicon-based substrate (100) is a bare silicon substrate or a circuit-containing silicon substrate.
6. The preparation method according to claim 1, characterized in that: The material of the metal electrode layer (200) includes one or more of Al, Ag, TiN and Ti.
7. The preparation method according to claim 1 or 6, characterized in that: The metal electrode layer (200) is a single-layer thin film or a multi-layer composite thin film.
8. The preparation method according to claim 1, characterized in that: The first coating photoresist, the second coating photoresist and the third coating photoresist are all made of PR glue.
9. The preparation method according to claim 1, characterized in that: The method for removing the photoresist on the first sub-pixel region, the second sub-pixel region and the third sub-pixel region is wet stripping.