Spraying assembly and semiconductor coating equipment
By setting an independent RPS introduction area on the shower plate, the cleaning gas is directly introduced, which solves the problem of low cleaning efficiency in PECVD, and improves the stability of the semiconductor film process and the equipment usage cycle.
Patent Information
- Application Number
- CN202411577804.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2025-01-03
AI Technical Summary
In the process of plasma enhanced chemical vapor deposition (PECVD) film, the cleaning gas after remote plasma source is activated is reduced due to frequent ion collisions during the cleaning process of the reaction chamber, resulting in a decrease in the number of charged particles and low cleaning efficiency, which affects the stability of the semiconductor film process. and capacity.
An independent RPS introduction area is set up on the shower plate, through which cleaning gas is directly introduced into the reaction chamber and heating plate, reducing ion collisions, increasing the number of charged particles, and improving cleaning efficiency.
It effectively improves the cleaning efficiency and effect of the reaction chamber and heating disk bottom, and improves the stability of the semiconductor film process and the service cycle of the equipment.
Smart Images
Figure CN119243118A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor thin film vapor deposition, for example, to a spray assembly and semiconductor coating equipment. Background Art
[0002] At present, in the existing Plasma Enhanced Chemical Vapor Deposition (PECVD) thin film process, due to the diffusion characteristics of plasma, a thin film is not only formed on the surface of the wafer, but also deposited on the surface of the shower plate, the side wall of the reaction chamber and the bottom of the heating plate.
[0003] Therefore, after the process is completed, the reaction chamber needs to be cleaned. The existing PECVD cleaning method generally uses a remote plasma source (RPS) to clean the reaction chamber. That is, after the cleaning gas is ionized and activated by the remote plasma source, the plasma is introduced into the reaction chamber by air flow, etc., and then evenly diffused after flowing through the shower plate to fully clean the reaction chamber, heating plate, etc., to achieve the purpose of cleaning.
[0004] In the process of implementing the embodiments of the present disclosure, it is found that there are at least the following problems in the related art:
[0005] In the process of using the cleaning gas activated by RPS to clean the reaction chamber, the ions in the cleaning gas after plasma formation will frequently collide due to the long distance, causing the ions to capture opposite charges and transform into electrically neutral substances, thereby reducing the number of charged particles in the cleaning gas after activation by the remote plasma source, resulting in low cleaning efficiency and poor cleaning effect of the chamber wall and the bottom of the heating plate of the reaction chamber, which in turn leads to technical problems such as instability, low production capacity and particle deposition in the semiconductor thin film process.
[0006] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present application, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention
[0007] In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. The summary is not an extensive review, nor is it intended to identify key / critical components or delineate the scope of protection of these embodiments, but rather serves as a prelude to the detailed description that follows.
[0008] The embodiments of the present disclosure provide a spray assembly and semiconductor coating equipment, which can improve the cleaning effect and cleaning efficiency of the reaction chamber, and can effectively improve the stability of the semiconductor thin film process and the service life of the equipment.
[0009] In some embodiments, the spray assembly is arranged in the reaction chamber of the semiconductor coating equipment and is located above the heating plate, including: a spray plate, a spray area and an RPS introduction area. The spray area is arranged on the spray plate, and the RPS introduction area is arranged on the spray plate and is independent of the spray area, and is used to introduce the clean gas from the top of the reaction chamber into other areas of the reaction chamber and the heating plate.
[0010] Optionally, the RPS introduction area includes a through portion, which is arranged along an edge of the spray area and forms a ventilation structure on the spray plate along a flow direction of the clean gas.
[0011] Optionally, the through portion includes a plurality of circular ventilation structures distributed at equal intervals or at unequal intervals.
[0012] Optionally, the through portion includes a plurality of rectangular ventilation structures that are distributed at equal intervals or at unequal intervals.
[0013] Optionally, the through-portion includes a continuous special-shaped ventilation structure formed by a plurality of circular through holes or rectangular through holes interconnected with each other.
[0014] Optionally, the ventilation structure comprises a linear through structure with an inclination or a gradually changing aperture, wherein the direction of the inclination and the gradually changing aperture is toward the side wall of the reaction chamber or the direction where the heating plate is located.
[0015] Optionally, the ventilation structure includes a first through portion and a second through portion, the first through portion forming an opening in a direction toward the top of the reaction chamber; one end of the second through portion is connected to one end of the first through portion, and the other end forms an opening in a direction toward the side wall of the reaction chamber or the heating plate; wherein the caliber of the first through portion is the same as or different from the caliber of the second through portion.
[0016] Optionally, the ventilation structure includes a main through portion and multiple branch through portions, the main through portion forming an opening in the direction toward the top of the reaction chamber; one end of each of the multiple branch through portions is connected to the main through portion, and the other end faces multiple different directions in the reaction chamber.
[0017] Optionally, the spray area includes a first sub-spray area and a second sub-spray area that are independent of each other, and the RPS introduction area includes a first sub-RPS introduction area and a second sub-RPS introduction area that are independent of each other, wherein the first sub-spray area is coaxially arranged with the first sub-RPS introduction area, and the second sub-spray area is coaxially arranged with the second sub-RPS introduction area.
[0018] In some embodiments, the semiconductor coating equipment includes a spray assembly as described in the present application, wherein the semiconductor coating equipment includes an etching equipment, a chemical vapor deposition equipment, or an atomic layer deposition equipment.
[0019] The spray assembly and semiconductor coating equipment provided by the embodiments of the present disclosure can achieve the following technical effects:
[0020] The present application sets an RPS introduction area independent of the spray area on the spray plate, so that the cleaning gas from the top of the reaction chamber is directly introduced into other areas of the reaction chamber and the heating plate through the RPS introduction area through the spray plate, which can effectively reduce the collision of ions in the cleaning gas after plasma treatment due to the long distance, thereby reducing the probability of positive ions or negative ions capturing opposite charges and converting them into electrically neutral substances, increasing the number of charged particles in the cleaning gas after activation by the remote plasma source, improving the cleaning efficiency and cleaning effect of the chamber wall of the reaction chamber and the bottom of the heating plate, and thus improving the production capacity, process stability and service life of the semiconductor coating equipment.
[0021] The above general description and the following description are exemplary and explanatory only and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] One or more embodiments are exemplarily described by corresponding drawings, which do not limit the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements, and the drawings do not constitute a scale limitation, and wherein:
[0023] Figure 1 It is a schematic diagram of the structure of a reaction chamber provided in this application;
[0024] Figure 2 It is a structural schematic diagram of a spray assembly provided by the present application;
[0025] Figure 3 It is a schematic diagram of the structure of an RPS import area provided by this application;
[0026] Figure 4 is a schematic diagram of the structure of another RPS import area provided by this application;
[0027] Figure 5 is a schematic diagram of the structure of another RPS import area provided by this application;
[0028] Figure 6 It is a structural schematic diagram of a linear through structure provided by the present application;
[0029] Figure 7 is a structural schematic diagram of another linear through structure provided by the present application;
[0030] Figure 8 is a structural schematic diagram of another linear through structure provided by the present application;
[0031] Fig. 9is a structural schematic diagram of another linear through structure provided by the present application;
[0032] Fig.10 It is a structural schematic diagram of a first through-portion and a second through-portion provided by the present application;
[0033] Fig.11 is another structural schematic diagram of a first through-portion and a second through-portion provided by the present application;
[0034] Fig.12 is another structural schematic diagram of a first through-portion and a second through-portion provided by the present application;
[0035] Fig.13 is another structural schematic diagram of a first through-portion and a second through-portion provided by the present application;
[0036] Fig.14 is another structural schematic diagram of a first through-portion and a second through-portion provided by the present application;
[0037] Fig.15 It is a structural schematic diagram of a main through-portion and a branch through-portion provided by the present application;
[0038] Fig.16 is a structural schematic diagram of another main through-portion and branch through-portion provided by the present application;
[0039] Fig.17 It is a structural schematic diagram of another spray assembly provided in this application.
[0040] Reference numerals:
[0041] 1- spray plate; 2- spray area; 3- RPS introduction area; 4- circular through hole; 5- rectangular through hole; 6- larger special-shaped expansion hole; 7- linear through hole; 8- first through part; 9- second through part; 10- main through part; 11- branch through part; 12- first sub-spray area; 13- second sub-spray area; 14- first sub-RPS introduction area; 15- second sub-RPS introduction area; 16- reaction chamber; 17- heating plate. DETAILED DESCRIPTION
[0042] In order to be able to understand the features and technical contents of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. The attached drawings are for reference only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the convenience of explanation, a full understanding of the disclosed embodiments is provided through multiple details. However, one or more embodiments can still be implemented without these details. In other cases, to simplify the drawings, well-known structures and devices can be simplified for display.
[0043] The terms "first", "second", etc. in the specification and claims of the embodiments of the present disclosure and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchanged where appropriate, so that the embodiments of the embodiments of the present disclosure described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions.
[0044] In the embodiments of the present disclosure, the terms "upper", "lower", "inside", "middle", "outside", "front", "back" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. These terms are mainly intended to better describe the embodiments of the present disclosure and their embodiments, and are not intended to limit the indicated devices, elements or components to have a specific direction, or to be constructed and operated in a specific direction. Moreover, in addition to being used to indicate directions or positional relationships, some of the above terms may also be used to indicate other meanings. For example, the term "upper" may also be used to indicate a certain dependency or connection relationship in certain circumstances. For those of ordinary skill in the art, the specific meanings of these terms in the embodiments of the present disclosure can be understood according to specific circumstances.
[0045] In addition, the terms "disposed", "connected", and "fixed" should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to specific circumstances.
[0046] Unless otherwise stated, the term "plurality" means two or more.
[0047] In the embodiment of the present disclosure, the character " / " indicates that the preceding and following objects are in an "or" relationship. For example, A / B indicates: A or B.
[0048] The term "and / or" is a description of the association relationship between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or, A and B.
[0049] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present disclosure may be combined with each other.
[0050] Combination Figure 1 and Figure 2As shown, an embodiment of the present disclosure provides a spray assembly, which is arranged in a reaction chamber 16 of a semiconductor coating device and is located above a heating disk 17, and includes a spray plate 1, a spray area 2, and an RPS introduction area 3, wherein the spray area 2 is arranged on the spray plate 1, and a spray hole for performing a thin film process is arranged on the spray area 2. One or more RPSs may be arranged on the top of the reaction chamber 16, and the RPSs may generate the cleaning gas required in the thin film process and transport it to the top of the spray plate 1 through a gas pipeline. The RPS introduction area 3 is arranged on the spray plate 1 and is independent of the spray area 2, and is used to introduce the cleaning gas from the top of the reaction chamber 16 to other areas of the reaction chamber 16 and the heating disk 17.
[0051] By adopting the spray assembly provided by the embodiment of the present disclosure, an RPS introduction area independent of the spray area is set on the spray plate, so that the cleaning gas from the top of the reaction chamber is directly introduced into other areas of the reaction chamber and the heating plate through the RPS introduction area through the spray plate, which can effectively reduce the collision of ions in the cleaning gas after plasma treatment due to the long distance, thereby reducing the probability of positive ions or negative ions capturing opposite charges and converting them into electrically neutral substances, increasing the number of charged particles in the cleaning gas after activation by the remote plasma source, improving the cleaning efficiency and cleaning effect of the chamber wall of the reaction chamber and the bottom of the heating plate, and thereby improving the production capacity, process stability and service life of the semiconductor coating equipment.
[0052] Optionally, the RPS introduction area of the present application includes a through portion, wherein the through portion is arranged along the edge of the spray area 2 and forms a ventilation structure on the spray plate 1 along the flow direction of the clean gas.
[0053] In one embodiment of the present application, the through-portion of the present application includes a plurality of circular ventilation structures distributed at equal intervals or at unequal intervals. Figure 3 As shown, the through-holes can be a plurality of circular through holes 4 that are distributed at equal or unequal intervals, and the plurality of circular through holes 4 are arranged in a ring shape around the spraying area. In addition, the apertures of the circular through holes 4 can be the same or different, and preferably, the apertures of the circular through holes can be selected within the range of 0.2-3 mm.
[0054] In another embodiment of the present application, the through-portion of the present application includes a plurality of rectangular ventilation structures distributed at equal intervals or at unequal intervals. Figure 4 As shown, the through-holes may be a plurality of rectangular through-holes 5 distributed at equal or unequal intervals, and the plurality of rectangular through-holes 5 are arranged in a ring shape around the spraying area.
[0055] In another embodiment of the present application, the through-hole of the present application comprises a continuous special-shaped ventilation structure formed by interconnecting a plurality of circular through holes or rectangular through holes. Figure 5 As shown, the through portion may be at least two relatively large special-shaped expansion holes 6 distributed at equal or unequal intervals, and the at least two relatively large special-shaped expansion holes 6 are arranged in a ring shape around the spraying area.
[0056] In this way, during the RPS cleaning process, plasma is used to treat the surface of the workpiece (electronic components and semi-finished products, parts, substrates, printed circuit boards, etc. in the semiconductor device production process) through chemical or physical action to achieve the removal of stains and contamination at the molecular level. The present application provides through holes of various shapes on the spray plate, so that the active ions or plasma of the cleaning gas after being plasmatized under the action of RPS can be directly introduced into the surrounding of the spray plate, so that the cleaning gas directly reaches the side wall of the reaction chamber and the bottom of the heating plate to achieve chamber cleaning, thereby improving the cleaning efficiency of the chamber wall and the bottom of the heating plate, while improving the production capacity and process stability of the equipment.
[0057] For example, nitrogen fluoride (NF3) gas is plasmatized into active ions or plasma such as F- and F+ under the action of RPS, and the above-mentioned high-energy groups are directly introduced into the surrounding areas of the spray plate through holes of various shapes arranged on the spray plate, thereby directly cleaning the side walls of the reaction chamber and the residual accumulated silicon dioxide and silicon nitride films on the bottom of the heating plate, thereby improving the cleaning efficiency of the chamber wall and the bottom of the heating plate, while improving the production capacity and process stability of the equipment.
[0058] In another embodiment of the present application, the ventilation structure of the present application includes a linear through structure with an inclination or a gradual change in diameter, wherein the direction of the inclination and the gradual change in diameter is toward the side wall of the reaction chamber 16 or the direction where the heating plate 17 is located.
[0059] Specifically, combined Figure 6 and Figure 7 As shown, the linear through-hole structure of the present application can be an inclined linear through-hole 7, one end of which is toward the top of the reaction chamber 16 and the other end is toward the side wall of the reaction chamber 16; or one end of which is toward the top of the reaction chamber 16 and the other end is toward the bottom of the heating plate 17. Figure 8 and Fig. 9 As shown, the linear through structure of the present application can also be a linear through hole 7 with a gradually changing diameter, one end of which is formed with an opening of a first diameter value, and the other end is formed with an opening of a second diameter value, and the first diameter value is smaller than the second diameter value; or, one end of which is formed with an opening of a third diameter value, and the other end is formed with an opening of a fourth diameter value, and the third diameter value is larger than the fourth diameter value.
[0060] In another embodiment of the present application, the ventilation structure of the present application includes a first through-portion and a second through-portion, wherein one end of the first through-portion faces the top of the reaction chamber 16, and the other end is connected to one end of the second through-portion; the other end of the second through-portion faces the side wall of the reaction chamber 16 or the direction of the heating plate 17; wherein the caliber of the first through-portion is the same as or different from the caliber of the second through-portion.
[0061] Specifically, combined Figures 10 to 14 As shown, the first through-portion 8 of the present application can be a linear through hole facing the top of the reaction chamber 16, and the caliber of the first through-portion 8 is the same as the caliber of the second through-portion 9; the first through-portion 8 can also be an open opening structure formed by a circular expansion hole, and the caliber of the first through-portion 8 is different from the caliber of the second through-portion 9; the second through-portion 9 can be an inclined linear through-portion structure, one end of which faces the top of the reaction chamber 16, and the other end faces the side wall of the reaction chamber 16 or the bottom of the heating plate 17; the second through-portion 9 can also be a linear through hole with a gradually changing caliber, one end of which is connected to the first through-portion 8, and the other end forms an expansion hole structure with a gradually increasing caliber facing the side wall of the reaction chamber 16 or the bottom of the heating plate 17.
[0062] In another embodiment of the present application, the ventilation structure of the present application includes a main through-portion 10 and a plurality of branch through-portions 11, one end of the main through-portion 10 faces the top of the reaction chamber 16, and the other end is respectively connected to the plurality of branch through-portions 11, and each of the plurality of branch through-portions 11 faces a plurality of different directions in the reaction chamber 16.
[0063] Specifically, combined Fig.15 and Fig.16 As shown, the main through-portion 10 of the present application can be a linear through-hole, one end of which is toward the top of the reaction chamber 16, and the other end extends to the middle of the spray plate; at the same time, the branch through-portions 11 of the present application can also be linear through-holes, and the number thereof is two or more, for example, 2-4, and one end of each branch through-portion 11 is connected to the main through-portion 10, and the other end forms an opening in the direction toward the side wall of the reaction chamber 16 or the bottom of the heating plate 17.
[0064] In this way, different process steps can be better combined, the cleaning gas of the RPS can be selectively and directly introduced into the side wall of the reaction chamber or the bottom of the heating plate, and the flow rate of the introduced cleaning gas can be controlled.
[0065] Optionally, the spray area 2 of the present application includes a first sub-spray area and a second sub-spray area that are independent of each other, and the RPS introduction area includes a first sub-RPS introduction area and a second sub-RPS introduction area that are independent of each other, wherein the first sub-spray area is coaxially arranged with the first sub-RPS introduction area, and the second sub-spray area is coaxially arranged with the second sub-RPS introduction area.
[0066] In one embodiment of the present application, Fig.17 As shown, a circular first sub-spraying area 12 is formed with the center point of the spray plate 1 as the center, an annular first sub-RPS introduction area 14 is coaxially arranged along the edge of the first sub-spraying area 12, an annular second sub-spraying area 13 is coaxially arranged along the edge of the first sub-RPS introduction area 14, and an annular second sub-RPS introduction area 15 is coaxially arranged along the edge of the second sub-spraying area 13. In addition, it should be noted that the first sub-RPS introduction area 14 and the second sub-RPS introduction area 15 of the present application also have the above-mentioned through portion and its specific ventilation structure, which will not be repeated in this application.
[0067] In this way, the sub-spray area and the sub-RPS introduction area of the present application are independent of each other, and the flow rate and concentration of the introduced cleaning gas can be adjusted separately as needed. The sub-spray area and the sub-RPS introduction area are distributed in an annular shape, which can supplement and adjust the airflow density of the cleaning gas reaching the side walls of the reaction chamber and the heating plate, thereby improving the cleaning efficiency of the side walls of the reaction chamber and the bottom of the heating plate.
[0068] At the same time, an embodiment of the present disclosure provides a semiconductor coating device, including a spray assembly as described in the present application, wherein the semiconductor coating device includes an etching device, a chemical vapor deposition device or an atomic layer deposition device.
[0069] The above description and the accompanying drawings sufficiently illustrate the embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations may vary. Portions and features of some embodiments may be included in or replace portions and features of other embodiments. The embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.
Claims
1. A spray assembly, arranged in a reaction chamber of a semiconductor coating device and located above a heating plate, characterized in that: include: Sprinkler panels; A spraying area, arranged on the spraying plate; The RPS introduction area is disposed on the spray plate and is independent of the spray area, and is used to introduce the cleaning gas from the top of the reaction chamber into other areas of the reaction chamber and the heating plate.
2. The spray assembly according to claim 1, characterized in that: The RPS import area includes: The through portion is arranged along the edge of the spraying area and forms a ventilation structure on the spraying plate along the flow direction of the cleaning gas.
3. The spray assembly according to claim 2, characterized in that: The through portion includes a plurality of circular ventilation structures that are distributed at equal intervals or at unequal intervals.
4. The spray assembly according to claim 2, characterized in that: The through-portion includes a plurality of rectangular ventilation structures that are distributed at equal or unequal intervals.
5. The spray assembly according to claim 2, characterized in that: The through-hole portion comprises a continuous special-shaped ventilation structure formed by a plurality of circular through holes or rectangular through holes connected to each other.
6. The spray assembly according to claim 3, 4 or 5, characterized in that: The ventilation structure comprises a linear through structure with an inclination or a gradually changing diameter, wherein the direction of the inclination and the gradually changing diameter is toward the side wall of the reaction chamber or the direction where the heating plate is located.
7. The spray assembly according to claim 3, 4 or 5, characterized in that: The ventilation structure includes: A first through portion, forming an opening in a direction toward the top of the reaction chamber; A second through-portion, one end of which is connected to one end of the first through-portion, and the other end of which is opened in a direction toward the side wall of the reaction chamber or the direction where the heating plate is located; The diameter of the first through-portion is the same as or different from the diameter of the second through-portion.
8. The spray assembly according to claim 3, 4 or 5, characterized in that: The ventilation structure includes: The main body through-hole forms an opening in a direction toward the top of the reaction chamber; A plurality of branch through-portions, wherein one end of each of the branch through-portions is connected to the main body, and the other end faces a plurality of different directions in the reaction chamber.
9. The spray assembly according to claim 1, characterized in that: The spray area includes a first sub-spray area and a second sub-spray area that are independent of each other, and the RPS introduction area includes a first sub-RPS introduction area and a second sub-RPS introduction area that are independent of each other, wherein the first sub-spray area is coaxially arranged with the first sub-RPS introduction area, and the second sub-spray area is coaxially arranged with the second sub-RPS introduction area.
10. A semiconductor coating device, characterized in that: It comprises a spray assembly as described in any one of claims 1 to 9, wherein the semiconductor coating equipment comprises an etching equipment, a chemical vapor deposition equipment or an atomic layer deposition equipment.