Display panel, light sensation driving method thereof and display device

Abstract

The invention provides a display panel, a light sensation driving method thereof and a display device. The display panel comprises a display area and a non-display area surrounding the display area or partially surrounding the display area. The display area comprises pixel units arranged in an array, transistor structures arranged corresponding to sub-pixels in the pixel units, and a plurality of signal lines; wherein the transistor structure comprises a first electrode, a second electrode and a third electrode; the first ends of the signal lines are respectively connected with the third electrodes of the transistor structures corresponding to at least one row of sub-pixels with the same color, and the second ends of the signal lines extend to the non-display area; the non-display area comprises a driving unit, the driving unit is connected with the second ends of the multiple signal lines, and the driving unit is used for detecting a first voltage value at a starting moment and a second voltage value at an ending moment in any frame of the sub-pixels in the pixel unit in a non-display state; and determining the ambient light type and / or ambient light intensity according to the first voltage value and the second voltage value.

Description

Technical Field

[0001] The present application relates to the field of display and photosensitive technology, and in particular to a display panel and a photosensitive driving method thereof, and a display device. Background Art

[0002] With the continuous development of liquid crystal display technology, various intelligent display devices have higher and higher requirements for display screens. The existence of light-sensing modules can detect the intensity of external ambient light to adjust the display brightness of the display device. In response to market requirements and in order to reduce costs, the current light-sensing LCD screen can replace the conventional silicon-based light-sensing currently used in the whole machine. The current light-sensing module and its corresponding thin-film transistor (Thin Film Transistor, TFT) require additional settings, which are generally set on the upper side of the display panel, that is, between the display area and the non-display area.

[0003] However, the above configuration requires an additional light sensing module, which increases the width of the display panel frame, but the detection of ambient light cannot meet expectations. Therefore, a display panel that can improve the accuracy of ambient light detection and effectively reduce the width of the display panel frame is needed. Summary of the invention

[0004] In view of this, the purpose of the present application is to provide a display panel and a light-sensing driving method thereof, and a display device that overcome the above problems or at least partially solve the above problems.

[0005] Based on the above purpose, in a first aspect of the present application, a display panel is provided, comprising: a display area and a non-display area surrounding the display area or partially surrounding the display area;

[0006] The display area includes pixel units arranged in an array, a first transistor structure arranged corresponding to sub-pixels in the pixel units, and a plurality of signal lines; wherein the first transistor structure includes a first electrode, a second electrode, and a third electrode; the first ends of the plurality of signal lines are respectively connected to the third electrode of the first transistor structure corresponding to at least one row of sub-pixels of the same color, and the second ends extend toward the non-display area;

[0007] The non-display area includes a driving unit connected to the second ends of the plurality of signal lines.

[0008] Optionally, the sub-pixels in the pixel unit include a first sub-pixel, a second sub-pixel and a third sub-pixel;

[0009] The plurality of signal lines include a first signal line, a second signal line, and a third signal line;

[0010] A first end of the first signal line is connected to a third electrode of a first transistor structure corresponding to at least one row of the first sub-pixels, and a second end of the first signal line is connected to the driving unit;

[0011] A first end of the second signal line is connected to a third electrode of a first transistor structure corresponding to at least one row of the second sub-pixels, and a second end of the second signal line is connected to the driving unit;

[0012] The first end of the third signal line is connected to the third electrode of the first transistor structure corresponding to at least one row of the third sub-pixels, and the second end of the third signal line is connected to the driving unit.

[0013] Optionally, the first sub-pixel, the second sub-pixel and the third sub-pixel connected to the driving unit are respectively located in pixel units of different rows.

[0014] Optionally, it further includes a second transistor structure and a fourth signal line arranged in the non-display area, wherein the second transistor structure includes a first electrode, a second electrode and a third electrode;

[0015] A first end of the fourth signal line is connected to the third electrode of the second transistor structure, and a second end thereof is connected to the driving unit;

[0016] At least one shielding layer is disposed on a side of the second transistor structure facing the light emitting direction.

[0017] Optionally, it further includes a fourth sub-pixel arranged in the display area and the first transistor structure and a fourth signal line corresponding to the fourth sub-pixel, the fourth sub-pixel being arranged in the sub-pixel array in the pixel unit; a first end of the fourth signal line is connected to the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and a second end extends toward the non-display area and is connected to the driving unit;

[0018] The fourth sub-pixel is black.

[0019] Optionally, it further includes a fourth sub-pixel and a fifth sub-pixel arranged in the display area, and the first transistor structure, a fourth signal line and a fifth signal line respectively corresponding to the fourth sub-pixel and the fifth sub-pixel, wherein the fourth sub-pixel and the fifth sub-pixel are respectively arranged in an array with sub-pixels spaced apart in the pixel unit.

[0020] A fourth sub-pixel and a fifth sub-pixel are arranged between the columns of the pixel units, and the fourth sub-pixel and the fifth sub-pixel are arranged at intervals along the row direction of the pixel units;

[0021] A first end of the fourth signal line is connected to the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and a second end thereof extends toward the non-display area and is connected to the driving unit;

[0022] A first end of the fifth signal line is connected to the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and a second end thereof extends toward the non-display area and is connected to the driving unit;

[0023] The fourth sub-pixel is black, and the fifth sub-pixel is transparent.

[0024] Optionally, it further includes a fifth sub-pixel arranged in the display area, the first transistor structure corresponding to the fifth sub-pixel, and a fifth signal line, the fifth sub-pixel is arranged in the sub-pixel array in the pixel unit; a first end of the fifth signal line is connected to the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and a second end extends toward the non-display area and is connected to the driving unit;

[0025] The fifth sub-pixel is transparent.

[0026] Optionally, the second transistor structure is arranged on a side of the non-display area close to the driving unit.

[0027] Optionally, the first electrode of the first transistor structure is connected to a signal scanning line, and the second transistor structure and the sub-pixels in the pixel unit are driven by the driving unit simultaneously using the signal scanning line.

[0028] Optionally, the first electrode of the first transistor structure is connected to a signal scanning line, and the first transistor structure corresponding to the fourth sub-pixel shares the signal scanning line with the sub-pixels in the pixel unit located in the same row.

[0029] Optionally, the first electrode of the first transistor structure is connected to a signal scanning line, and the first transistor structure corresponding to the fifth sub-pixel shares the signal scanning line with the sub-pixels in the pixel unit located in the same row.

[0030] Optionally, the non-display area includes a first side and a second side opposite to each other, the first signal line and the second signal line extend toward the first side, and the third signal line extends toward the second side;

[0031] Or the first signal line extends toward the first side, and the second signal line and the third signal line extend toward the second side.

[0032] In a second aspect of the present application, a display panel light sensing driving method is provided, which is applicable to the display panel described in the first aspect, and the method includes:

[0033] Using the driving unit to respectively detect a first voltage value at a start time and a second voltage value at an end time of a non-display state of a sub-pixel in the pixel unit in any frame;

[0034] determining a first voltage difference according to the first voltage value and the second voltage value;

[0035] Determine the ambient light intensity using a predetermined first relationship curve between the voltage difference and the ambient light intensity and the first voltage difference;

[0036] The type of ambient light is determined by using the predetermined corresponding relationship between the voltage difference ratio of each sub-pixel in the pixel unit and the type of ambient light and the first voltage difference.

[0037] Optionally, the method further comprises: using the driving unit to detect a third voltage value at a start time and a fourth voltage value at an end time of a non-display state in a frame corresponding to the second transistor structure and the sub-pixel in the pixel unit;

[0038] determining a second voltage difference according to the third voltage value and the fourth voltage value;

[0039] Determine the temperature disturbance by using a predetermined second relationship curve between the second voltage difference and the temperature;

[0040] Determine a third voltage difference using a difference between the first voltage difference and the second voltage difference;

[0041] Determine a final ambient light intensity using a predetermined first relationship curve between the voltage difference and the ambient light intensity and the third voltage difference;

[0042] Determine a final ambient light type by using a predetermined correspondence between the voltage difference ratio of each sub-pixel and the ambient light type and the third voltage difference;

[0043] The brightness of the display panel is determined according to the final ambient light type and the final ambient light intensity.

[0044] A third aspect of the present application provides a display device, characterized in that it includes the display panel described in the first aspect.

[0045] From the above description, it can be seen that the display panel and its photosensor driving method and display device provided by the present application, firstly, utilize the sub-pixels and their corresponding transistor structures in the pixel units of the display area as photosensitive TFT modules, eliminating the need to design an additional photosensitive TFT module at the border of the display panel, thereby saving process steps.

[0046] Secondly, the sub-pixels in the pixel units of the display area and their corresponding transistor structures are directly used as light-sensitive TFT modules, which reduces the space occupied by the additionally designed light-sensitive TFT modules, reduces the border width, and realizes a narrow border.

[0047] Third, the sub-pixels and their corresponding transistor structures in the pixel units of the display area are used as light-sensitive TFT modules. The transistor structures corresponding to the sub-pixels are not blocked by the ink layer and can also receive ambient light at a wide viewing angle, thereby determining the ambient light intensity at a wide viewing angle.

[0048] Fourth, the fourth sub-pixel and its corresponding transistor structure are used as a reference group, arranged in the non-display area, and a shading layer is provided on the side of the light emitting direction of the display panel. When determining the relationship between temperature and leakage value, the influence of ambient light is eliminated. The leakage value of the transistor structure corresponding to the sub-pixel in the pixel unit is subtracted from the leakage value of the transistor corresponding to the fourth sub-pixel. The relationship between only ambient light and leakage value after eliminating the influence of temperature can be determined.

[0049] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solutions in the present application or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0051] Figure 1 It is a side cross-sectional view of a photosensitive TFT module in the related art;

[0052] Figure 2 It is a top cross-sectional view of a photosensitive TFT module in the related art;

[0053] Figure 3 It is a main view of a light-sensing TFT module in the related art;

[0054] Figure 4 It is a circuit connection diagram of a photosensitive TFT module in the related art;

[0055] Figure 5a A data diagram showing the relationship between the leakage current and the ambient light intensity detected by the black light-sensitive TFT module in the related art;

[0056] Figure 5b A curve diagram showing the relationship between the leakage current and the ambient light intensity detected by the black light-sensitive TFT module in the related art;

[0057] Figure 6 A schematic diagram of viewing angle blocking of a light-sensitive TFT module in the related art;

[0058] Figure 7 A schematic diagram of the amount of ambient light received by a light-sensitive TFT module in the related art as the viewing angle changes;

[0059] Figure 8 It is a schematic diagram of the wiring of the upper frame of the light-sensing TFT module in the related art;

[0060] Fig. 9 It is a schematic diagram of the wiring of the left and right borders of the light-sensing TFT module in the related art;

[0061] Fig.10 This is a front view of a display panel according to an embodiment of the present application;

[0062] Fig.11 A cross-sectional view of a display panel according to an embodiment of the present application;

[0063] Fig.12 A schematic diagram of a waveform of a sub-pixel and a corresponding transistor structure switch signal of an embodiment of the present application;

[0064] Fig.13a A schematic diagram of the position of the second transistor structure in the non-display area according to an embodiment of the present application;

[0065] Fig.13b For Fig.13a A schematic diagram of the corresponding second transistor structure position;

[0066] Fig.14a A data diagram showing the relationship between the leakage current magnitude and the ambient light intensity detected by the transistor structure corresponding to the second transistor structure in the non-display area in the embodiment of the present application;

[0067] Fig.14b A curve diagram showing the relationship between the leakage current magnitude and the ambient light intensity detected by the transistor structure corresponding to the second transistor structure in the non-display area in the embodiment of the present application;

[0068] Fig.15 A cross-sectional view of a second display panel according to an embodiment of the present application;

[0069] Fig.16 A cross-sectional view of a third display panel according to an embodiment of the present application;

[0070] Fig.17 A cross-sectional view of a fourth display panel according to an embodiment of the present application;

[0071] Fig.18 This is a flow chart of a display panel light sensing driving method according to an embodiment of the present application;

[0072] Fig.19 Schematic diagram of a display device according to an embodiment of the present application. DETAILED DESCRIPTION

[0073] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0074] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be the usual meanings understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0075] As described in the background technology section above, in the related art, a light-sensitive TFT module 100 is disposed between the display area and the non-display area on the upper side of the display panel. Figure 1-Figure 4 As shown, four groups of light-sensitive TFT modules 100 are designed on a thin film transistor substrate 8 (Thin Film Transistor glass, TFT glass), namely four groups of transistors 6 of red (R), green (G), blue (B), and black (D). Among them, in the three groups of R, G, and B, the light-shielding layer 5 (Black matrix, BM) on the light-emitting side of the three groups of TFTs is hollowed out respectively, and then filled with red color film 71, green color film 72, and blue color film 73 accordingly, while the BM above the black group of transistors 6 is not hollowed out, and the rest is the same as the current TFT-LCD (Thin Film Transistor Liquid Crystal Display, thin film transistor liquid crystal display) panel, and a lower polarizer 9 is provided on the side of the TFT facing the backlight module 10, and a color filter substrate 4, an upper polarizer 3, an ink layer 2, a cover plate 1, etc. are stacked in sequence on the side away from the backlight module.

[0076] The specific principle of the light sensing function is as follows: when the external ambient light shines on the photosensitive TFT through the light-emitting side of the display panel, the red light, green light, and blue light in a certain light source have different proportions, and it shines on the three groups of R, G, and B photosensitive TFTs. The R photosensitive TFT receives the red light of this light source, the G photosensitive TFT receives the green light of this light source, and the B photosensitive TFT receives the blue light of this light source. When any photosensitive TFT switch is in the closed state (that is, when the gate in the photosensitive TFT switch circuit is not powered), when the source of the photosensitive TFT switch provides a certain voltage, its drain will generate a certain leakage current. The relationship between the external ambient light and the drain current is determined by testing the size of the drain leakage current. However, the photosensitive TFT itself does not know the relationship between the external environment and the drain current value. The light sensing module needs to collect the drain current value of a certain light source at different intensities in advance to generate a relationship curve between the drain current size of this light source at different light intensities. However, in actual application scenarios, there are many types of external ambient light, which are different from the R, G, and B color proportions of the light source collected in advance, so it is necessary to correct the actual external ambient light into the light source of the light intensity and leakage current relationship curve collected in advance. The current correction algorithm is: 1. Collect the drain current value of a certain light source at different intensities in advance, and generate a relationship curve between the drain current value of this light source at different light intensities; 2. Collect the drain current values ​​of the red R photosensitive TFT and the blue B photosensitive TFT of different light sources in advance, and the type of light source can be determined by the drain current of the R photosensitive TFT or the drain current of the B photosensitive TFT collected respectively (the color temperature of the external ambient light can also be determined); 3. Collect the drain current value of the green G photosensitive TFT of different light sources at a certain light intensity in advance, and combine the light intensity and drain current relationship curve collected in advance in step 1 to determine the light intensity coefficient of different light sources, that is, the relationship coefficient of different light sources with the light source collected in advance at a certain light intensity; the above three values ​​collected in advance can be used to correct the external ambient light to the light intensity and leakage current relationship curve of the light source collected in advance, so as to realize the light intensity and type of the actual external ambient light detected by the photosensitive TFT.

[0077] However, in the above detection method, the relationship between the light intensity of ambient light and the drain current is determined at a certain fixed temperature. In addition to being affected by ambient light, the drain current of the photosensitive TFT is also affected by temperature. Therefore, it is necessary to remove the influence of temperature on the photosensitive TFT and retain only the influence of ambient light, so as to achieve the adjustment of the brightness of the display panel. A black D photosensitive TFT module is designed herein. The corresponding position of the TFT is not hollowed out of the BM, but a TFT is set corresponding to the BM. The BM blocks the ambient light and the relationship between the difference between the outside temperature and a certain fixed ambient temperature is determined by collecting the corresponding TFT drain current. The drain current of the three groups of RGB photosensitive TFTs is subtracted from the drain current of the D group of photosensitive TFTs to obtain the final drain current. In theory, this completely avoids the influence of ambient temperature on the three groups of RGB photosensitive TFTs. Therefore, the role of the black photosensitive TFT module is to remove the correction parameters affected by ambient temperature.

[0078] In the related art, although the above-mentioned setting can minimize the increase in the space occupied by the photosensitive TFT module and reduce the width of the upper frame of the display panel, and at the same time, the ink located in the non-display area of ​​the display panel will not block the photosensitive TFT from receiving external ambient light, and will not affect the design of the existing display panel, but there are still problems.

[0079] First, reference Figure 1 , Figure 3 , Figure 4 , Figure 8 as well as Fig. 9 As shown in FIG. 1 , compared with a display panel without a light-sensing module, the frame width of the display panel increases due to the presence of the light-sensing TFT module. At the same time, due to the presence of the wiring, the four groups of transistors in the four groups of light-sensing TFT modules share a gate wiring 11 between the display area and the non-display area, a source wiring 12, a drain wiring 13 of the three groups of TFTs R, G, and B, a drain wiring 14 of the group of transistors D, and a common electrode layer wiring 15, which increases the upper side frame of the display panel. The specific distance is as shown in FIG. Figure 8 As shown in A, the borders on the left and right sides are also enlarged. Due to the corresponding gate wiring, source wiring and drain wiring, the borders are also enlarged. The specific distance is as follows Fig. 9As shown in B; For example, the distance between the display area and the non-display area of ​​the display panel without light sensing function is 0.2mm. Considering that the ink in the process does not block the light sensing TFT, and the light sensing TFT is set in this part, the upper frame of the display panel needs to be expanded by at least 0.13mm, the silk screen tolerance is ±0.1mm (single side ±0.05mm), the cover plate fitting accuracy is ±0.1mm, and the tolerance of the ink window to the non-display area is ±0.07mm. Therefore, the cumulative tolerance C = sqrt (0.05*0.05+0.1*0.1+0.07*0.07) = 0.132. Therefore, in the design of the light sensing TFT module of the related art, the width of the upper frame is increased compared with the module without light sensing, such as Figure 1 and Figure 8 The size of A is 0.37mm, and the gate, source and drain wiring of the photosensitive TFT are also added on the left and right sides. Fig.10 The size of B in the middle increases the width of the left and right borders by nearly 45um each.

[0080] Second, since the photosensitive TFT module is arranged between the display area and the non-display area, according to the spacing requirement between the display area and the non-display area, when the ambient light is greater than 30° from the non-display area side close to the photosensitive TFT module 100 and the photosensitive TFT module perpendicular to the display panel, the ink layer 2 in the non-display area will block the ambient light from irradiating the photosensitive TFT module, resulting in serious attenuation of the light intensity detected by the thin film transistor 6 of the photosensitive TFT module, which cannot meet the effective light sensing detection; for example, refer to Figure 6 and Figure 7 As shown in FIG. 1 , when the viewing angle of the ambient light along the vertical direction of the display panel increases, that is, when the angle α increases to a certain angle (30° to 40°), due to the blocking of the light by the ink layer 2 in the non-display area, the light directly irradiating the thin film transistor 6 at a larger viewing angle is insufficient, and the light intensity received by the photosensitive TFT suddenly decreases, that is, the FOV test does not meet the specification requirement of greater than 50°, and the change in the test angle of the photosensitive TFT and the light intensity curve are not smoothly transitioned, but the light sensitivity performance suddenly decreases after reaching a certain angle, as shown in FIG. Figure 7 The middle screen receives ambient light vertically downward.

[0081] Third, reference Figure 2 , Figure 3As shown, there are currently 4 groups of photosensitive TFT modules, namely red, green, blue and black. Among them, the light shielding layer 2 (Black matrix, BM) on the color film of the black group is not hollowed out, and the other three groups are hollowed out and filled with color films of corresponding colors. The BM in the black group blocks the external ambient light from irradiating the black group photosensitive TFT, so that the black group photosensitive TFT is not affected by the external ambient light and is only affected by the temperature. However, due to the influence of material properties, the BM cannot completely block the ambient light, which causes the black photosensitive TFT module to be affected by the ambient light and temperature at the same time, and cannot accurately provide a reference for the influence of temperature for the three groups of RGB photosensitive TFT modules, resulting in a decrease in the accuracy of the external ambient light detected by the three groups of RGB photosensitive TFT modules. For example, reference Figure 5a and Figure 5b In the present invention, three groups of ambient light are used to detect the drain current of the black light-sensitive TFT module. As the light intensity increases, the drain current increases accordingly.

[0082] Fourth, additional TFT light sensing module configuration is required, which will increase the process steps.

[0083] Based on this, the purpose of the present application is to overcome or at least partially overcome the above-mentioned problems and provide a display panel solution that can reduce the additional light-sensitive TFT settings, improve the accuracy of external light intensity detection, and reduce the border.

[0084] refer to Fig.10 , Fig.11 and Fig.12 As shown, the embodiment of the present application provides a display panel 200, including: a display area and a non-display area 32 surrounding the display area or partially surrounding the display area. The display area includes pixel units 33 arranged in an array, a first transistor structure 34 corresponding to the sub-pixels in the pixel units 33, and a plurality of signal lines; wherein the first transistor structure 34 includes a first electrode, a second electrode, and a third electrode; the first ends of the plurality of signal lines are respectively connected to the third electrode of the first transistor structure 34 corresponding to at least one row of sub-pixels of the same color, and the second ends extend to the non-display area 32. The non-display area 32 includes a driving unit 35, the driving unit 35 is connected to the second ends of the plurality of signal lines, and the driving unit 35 is used to detect a first voltage value at the start time and a second voltage value at the end time of the non-display state of the sub-pixels in any frame in the pixel unit 33, and determine the type of ambient light and / or the intensity of ambient light according to the first voltage value and the second voltage value.

[0085] Through the above-mentioned configuration, the sub-pixels in the pixel unit 33 and the corresponding first transistor structures 34 are directly utilized as the photosensitive TFT module, as the first transistor structures 34 corresponding to the sub-pixels, each of the first transistor structures 34 includes a first electrode, a second electrode and a third electrode. Exemplarily, the first electrode may be a gate, the second electrode may be a source, the third electrode may be a drain, the first electrode may also be a source, the second electrode may also be a drain, and the third electrode may also be a gate. This application does not make any specific limitations here.

[0086] In some exemplary embodiments, the first electrode is a gate electrode, the second electrode is a source electrode, and the third electrode is a drain electrode.

[0087] When the sub-pixels in the display area are displayed normally, one frame includes two parts: display time (n rows of sub-pixels are turned on in sequence for display) and non-display time (such as touch time, at which time the first transistor structures 34 corresponding to all sub-pixels are in a closed state). The gate signals of the first transistor structures 34 corresponding to each row of sub-pixels are pulled up and turned on in sequence. Since the sub-pixels in the same column are connected through the same source signal line, the source signal output of the first transistor structure 34 of the sub-pixels in each column is synchronized to the voltage (positive voltage or negative voltage) required by the corresponding sub-pixel. For any sub-pixel, when the gate signal of the first transistor structure 34 controlling the switch of the sub-pixel is turned on, the source signal voltage is charged to the sub-pixel. When the gate signal of the next row of the sub-pixel is turned on, the gate signal of the row corresponding to the sub-pixel is turned off, and the source signal voltage of the corresponding column will not be charged to the sub-pixel. The voltage of the sub-pixel is locked to the charged voltage, that is, the drain of the first transistor structure 34 corresponding to the sub-pixel.

[0088] In some embodiments, in order to achieve effective voltage collection, the present application collects the drain voltage of at least one row of sub-pixels of the same color to avoid the voltage of the third electrode of the first transistor structure 34 corresponding to a single sub-pixel being too small to effectively detect the voltage value.

[0089] In some embodiments, reference Fig.11 As shown, the sub-pixels in the pixel unit 33 include a first sub-pixel 331, a second sub-pixel 332 and a third sub-pixel 333. The plurality of signal lines include a first signal line 341, a second signal line 342 and a third signal line 343.

[0090] A first end of the first signal line 341 is connected to the third electrode of the first transistor structure 34 corresponding to at least one row of first sub-pixels 331 , and a second end of the first signal line 341 is connected to the driving unit 35 .

[0091] A first end of the second signal line 342 is connected to the third electrode of the first transistor structure 34 corresponding to at least one row of second sub-pixels 332 , and a second end of the second signal line 342 is connected to the driving unit 35 .

[0092] A first end of the third signal line 343 is connected to the third electrode of the first transistor structure 34 corresponding to at least one row of third sub-pixels 333 , and a second end of the third signal line 343 is connected to the driving unit 35 .

[0093] Optionally, the first sub-pixel 331 may be a red sub-pixel, the second sub-pixel 332 may be a green sub-pixel, and the third sub-pixel 333 may be a blue sub-pixel. Similarly, the first sub-pixel 331 may be a green sub-pixel, the second sub-pixel 332 may be a blue sub-pixel, and the third sub-pixel 333 may be a red sub-pixel. This embodiment of the present application does not make any specific limitation.

[0094] In some exemplary embodiments, the first sub-pixel 331 is a red sub-pixel (R), the second sub-pixel 332 is a green sub-pixel (G), and the third sub-pixel 333 is a blue sub-pixel (B).

[0095] After the corresponding sub-pixel is locked to the charged voltage as described above, in any frame, at the beginning of the non-display state, the first voltage value V1 of the third electrode of the first transistor structure 34 corresponding to R, G, and B is detected once by the driving unit 35, and then at the end, the second voltage value V2 of the third electrode of the first transistor structure 34 corresponding to R, G, and B is detected once by the driving unit 35, and the first voltage difference △V1 between the first voltage value and the second voltage value is used, and △V1 is the leakage size of the third electrode of the first transistor structure 34 corresponding to the sub-pixel (at least one row of R pixels, B pixels, or G pixels) from the beginning to the end of the non-display state in any frame. When the ambient light intensity changes, the two voltage differences are collected and change accordingly. By predetermining the relationship curve between the voltage difference and the ambient light intensity, the current ambient light intensity can be determined by using the first voltage difference, thereby adjusting the display brightness of the display panel 200.

[0096] It can be understood that there are three first voltage values, which are the voltage values ​​of the third electrodes of the first transistor structures 34 of the three groups of sub-pixels R, G, and B at the beginning of the non-display state. Similarly, there are three second voltage values, which are the voltage values ​​of the third electrodes of the first transistor structures 34 of the three groups of sub-pixels R, G, and B at the end of the non-display state. Correspondingly, there will also be three first voltage differences, and the type of ambient light can be determined by the proportion of the three groups of first low voltage differences.

[0097] It should be noted that there is also a backlight module in the display panel 200, and the light emitted by the backlight module will also illuminate the sub-pixels. However, since the current of the backlight module of the display panel 200 is determined, the backlight brightness is determined. It is determined in advance that there is no ambient light and only the light from the backlight module illuminates the sub-pixel. The corresponding voltage value of the third electrode of the first transistor structure 34 at the start time and the voltage value at the end time in the non-display state are used to determine the leakage value when only the backlight illuminates the sub-pixel. The leakage value is subtracted from the first voltage difference, and the difference obtained is the leakage value caused only by ambient light when the influence of the backlight is eliminated.

[0098] At the same time, in the embodiment of the present application, the sub-pixels of the pixel unit 33 and the corresponding first transistor structure 34 are directly used as the photosensitive TFT module, avoiding the need to set up an additional photosensitive TFT module, reducing space occupation, reducing the width of the frame, and irradiating the display panel 200 with ambient light on one side of the light emitting direction. Ambient light can be effectively collected at any viewing angle, avoiding the situation where the ambient light intensity cannot be effectively determined at a large viewing angle. At the same time, compared with the related technology, no additional gate lines and source lines are required for the left and right frames, which also reduces the width of the left and right frames.

[0099] In some embodiments, reference Fig.11 As shown, the first sub-pixel 331 , the second sub-pixel 332 , and the third sub-pixel 333 connected to the driving unit 35 are respectively located in the pixel units 33 of different rows.

[0100] The pixel unit 33 arranged in an array includes three sub-pixels of R, G, and B. Accordingly, the sub-pixels are also arranged in an array, using the first sub-pixel 331, the second sub-pixel 332, and the third sub-pixel 333 distributed in different rows. For example, the first sub-pixel 331 selects the first sub-pixel 331 of the first row, the second sub-pixel 332 selects the second sub-pixel 332 of the second row, and the third sub-pixel 333 selects the third sub-pixel 333 of the third row. When the wiring arrangement of the first signal line 341, the second signal line 342, and the third signal line 343 is performed, the inter-row wiring amount of the sub-pixels in different rows is only one more signal line (the first signal line 341, the second signal line 342, or the third signal line 343), which will not have a significant impact on the number of sub-pixels arranged, and will not affect the display uniformity and resolution of the display panel 200.

[0101] For example, taking the second row of sub-pixels as an example, if the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 connected to the driving unit 35 are all the first transistor structures 34 corresponding to the second row of sub-pixels, then the first signal line 341, the second signal line 342 and the third signal line 343 need to be arranged accordingly between the second row of sub-pixels and the third row of sub-pixels or between the second row of sub-pixels and the first row of sub-pixels, which affects the uniformity of arrangement between the sub-pixels in this row and other rows of sub-pixels and affects the display quality.

[0102] In some exemplary embodiments, if the leakage current cannot be effectively collected when leakage detection is performed on only one row of sub-pixels of the same color, leakage collection can be performed on multiple rows of sub-pixels of the same color. For example, the leakage current of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331 of the first and second rows is connected by the first signal line 341 for detection, the leakage current of the third electrode of the first transistor structure 34 corresponding to the second sub-pixel 332 of the third and fourth rows is connected by the second signal line 342 for detection, and the leakage current of the third electrode of the first transistor structure 34 corresponding to the third sub-pixel 333 of the fifth and sixth rows is connected by the third signal line 343 for detection. Alternatively, the leakage size of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331 of the first row and the fourth row is detected by connecting the first signal line 341, the leakage size of the third electrode of the first transistor structure 34 corresponding to the second sub-pixel 332 of the second row and the fifth row is detected by connecting the second signal line 342, and the leakage size of the third electrode of the first transistor structure 34 corresponding to the third sub-pixel 333 of the third row and the sixth row is detected by connecting the third signal line 343. Alternatively, the leakage size of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331 of the first row and the N-2th row is detected by connecting the first signal line 341, the leakage size of the third electrode of the first transistor structure 34 corresponding to the second sub-pixel 332 of the second row and the N-1th row is detected by connecting the second signal line 342, and the leakage size of the third electrode of the first transistor structure 34 corresponding to the third sub-pixel 333 of the third row and the Nth row is detected by connecting the third signal line 343, wherein N is the total number of rows of sub-pixels, that is, the number of resolution rows of the display panel 200. The connection method between multiple rows of sub-pixels of the same color and the driving unit 35 is not specifically limited here, as long as the above-described effect can be achieved.

[0103] In some embodiments, reference Fig.13a , Fig.13bAs shown, it also includes a second transistor structure 36 and a fourth signal line 345 arranged in the non-display area 32. The first end of the fourth signal line 345 is connected to the third electrode of the second transistor structure 36 corresponding to the fourth sub-pixel 334, and the second end is connected to the driving unit 35. The driving unit 35 is used to detect the third voltage value at the start time and the fourth voltage value at the end time of the non-display state in the frame corresponding to the sub-pixel in the pixel unit 33, and determine the temperature interference according to the third voltage value and the fourth voltage value; the second transistor structure 34 is provided with at least one shielding layer on the side facing the light emitting direction.

[0104] In this embodiment, the second transistor structure 36 is used as a control group to eliminate the influence of temperature on the photosensitive TFT module. The second transistor structure 36 is arranged in the non-display area 32. In the non-display area 32, there is no backlight module on the backlight direction side of the second transistor structure 36, thereby avoiding the influence of the backlight module on the leakage of the photosensitive TFT module. Fig.14a and Fig.14b As shown, in this embodiment, the ambient light has almost no effect on the leakage size of the second transistor structure 36. At least one light shielding layer is provided on the side of the fourth sub-pixel 334 facing the light emitting direction, completely eliminating the effect of the ambient light on the second transistor structure 36, and only using the detection temperature to measure the leakage size of the second transistor structure 36.

[0105] The temperature critical value of the second transistor structure 36 of the group is determined in advance, that is, at this temperature, the second transistor structure 36 does not leak, and then the third voltage value V3 at the start time and the fourth voltage value V4 at the end time of the non-display state in the frame corresponding to the sub-pixel in the pixel unit 33 are used to determine the relationship between the difference between the current ambient temperature and the temperature critical value and the leakage size by calculating the second voltage difference △V2 between the third voltage value and the fourth voltage value. The first difference between the first voltage difference △V1 and △V2 is used to accurately determine the relationship between the ambient light intensity and the leakage size, thereby eliminating the influence of the ambient temperature on the leakage of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 from the start time to the end time of the non-display state.

[0106] In some embodiments, at least one light-shielding layer comprises an ink layer.

[0107] In some embodiments, the second transistor structure 36 is disposed on a side of the non-display area 32 close to the driving unit 35. Fig.13a , Fig.13bAs shown, the second transistor structure 36 is arranged at the blank space between the silver paste dot 350 and the ID QR code of the display panel 200 on one side of the lower frame of the display panel 200, so that the common electrode layer, protective glue 51, silicone glue 52 and black ink 53 above the second transistor structure 36 will be used as a light shielding layer to effectively block the ambient light and reduce the influence of the ambient light on the light-sensitive TFT module of the reference group. At the same time, this position is located on the side of the non-display area 32 close to the driving unit 35, and the wiring of the fourth signal line 345 and the wiring of the gate line and source line of the second transistor structure 36 occupy less space.

[0108] In some optional embodiments, reference Fig.15 As shown, it also includes a fourth sub-pixel 334 arranged in the display area and a first transistor structure 34 and a fourth signal line 345 corresponding to the fourth sub-pixel 334. The fourth sub-pixel 334 is arranged in a sub-pixel array in the pixel unit 33; the first end of the fourth signal line 345 layer is connected to the third electrode of the first transistor structure 34 corresponding to the fourth sub-pixel 334, and the second end extends to the non-display area 32 and is connected to the driving unit 35; the fourth sub-pixel 334 is black.

[0109] In order to simplify the process, the fourth sub-pixel 334 is directly used as a pixel to be arrayed with the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333. During the process of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, the light shielding layer at the corresponding position of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 is hollowed out, and different color filter films are deposited respectively. In this process, the light shielding layer at the corresponding position of the fourth sub-pixel 334 is retained, and the light shielding layer is used as the fourth sub-pixel 33 4, and the first transistor structure 34 corresponding to the fourth sub-pixel 334 is retained at this position, and the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fourth sub-pixel 334 is connected to the driving unit 35 by using the first signal line 341, the second signal line 342, the third signal line 343 and the fourth signal line 345 respectively, and the fourth sub-pixel 334 and its corresponding first transistor structure 34 are used as a control group to determine the relationship between ambient light and leakage. The specific principle is the same as that of the above embodiment, and will not be repeated here.

[0110] Although the light shielding layer as the fourth sub-pixel 334 cannot block all ambient light, the leakage of the corresponding transistor structure 34 is affected by the ambient light, but the degree of influence is small. At the same time, compared with the related art, there is no need to additionally set the fourth sub-pixel 334 and its corresponding first transistor structure 34, which saves the width of the border. Under a large viewing angle, the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 are not blocked, and the leakage size of the third electrode corresponding to the first transistor structure 34 can be used to collect ambient light and determine the intensity of ambient light. At the same time, the leakage current size of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 are used to determine the proportion of red light, green light and blue light in the ambient light, thereby determining the type of ambient light.

[0111] In some optional embodiments, reference Fig.17 As shown, it also includes a fifth sub-pixel 335 arranged in the display area and a first transistor structure 34 and a fifth signal line 346 corresponding to the fifth sub-pixel 335. The fifth sub-pixel 335 is arranged in the sub-pixel array in the pixel unit 33; the first end of the fifth signal line 346 is connected to the third electrode of the first transistor structure 34 corresponding to the fifth sub-pixel 335, and the second end extends to the non-display area 32 and is connected to the driving unit 35; the fifth sub-pixel 335 is white.

[0112] In this embodiment, in order to simplify the process, the fifth sub-pixel 335 is directly used as a pixel and arrayed with the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333. In the process of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, the light shielding layer at the corresponding position of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 is hollowed out, and the deposition of different color filter films is performed respectively. In this process, the light shielding layer at the corresponding position of the fifth sub-pixel 335 is hollowed out, and no filter film is deposited. The transparent area of ​​the hollowed-out light shielding layer is directly used as the fifth sub-pixel 335. At the same time, the first transistor structure 34 corresponding to the fifth sub-pixel 335 is retained at this position, and the first signal line is used to generate a plurality of light shielding layers. The first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fifth sub-pixel 335 are connected to the third electrode of the first transistor structure 34 and the driving unit 35 respectively. The transparent state of the fifth sub-pixel 335 and the corresponding leakage size of the third electrode of the first transistor structure 34 are used to determine the relationship between the ambient light intensity and the leakage size, that is, the ambient light intensity is determined by the leakage size. At the same time, the leakage size of the third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 are used to determine the proportion of red light, green light and blue light in the ambient light, thereby determining the type of ambient light.

[0113] Compared with the related art, there is no need to additionally set up a photosensitive TFT module, which saves the border width. At a wide viewing angle, the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the fifth sub-pixel 335 are not blocked, and the leakage current of the third electrode of the corresponding first transistor structure 34 can be used to collect ambient light and determine the type and intensity of the ambient light. Furthermore, the fifth sub-pixel 335 acts as a transparent pixel, which improves the display brightness of the display panel 200.

[0114] In some optional embodiments, reference Fig.16As shown, it also includes a fourth sub-pixel 334 and a fifth sub-pixel 335 arranged in the display area, and a first transistor structure 34, a fourth signal line 345 and a fifth signal line 346 corresponding to the fourth sub-pixel 334 and the fifth sub-pixel 335 respectively. The fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged in an array with sub-pixels in the pixel unit 33, respectively. The fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged between the columns of the pixel unit 33, and the fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged at intervals along the row direction of the pixel unit 33; the first end of the fourth signal line 345 is connected to the third electrode of the first transistor structure 34 corresponding to the fourth sub-pixel 334, and the second end extends to the non-display area 32 and is connected to the driving unit 35; the first end of the fifth signal line 346 is connected to the third electrode of the first transistor structure 34 corresponding to the fifth sub-pixel 335, and the second end extends to the non-display area 32 and is connected to the driving unit 35; the fourth sub-pixel 334 is black, and the fifth sub-pixel 335 is transparent.

[0115] In the present embodiment, in order to simplify the process, the fourth sub-pixel 334 and the fifth sub-pixel 335 are directly used as sub-pixels to be arrayed with the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333. In order to avoid having too much influence on the resolution of the display panel 200, the fourth sub-pixel 334 and the fifth sub-pixel 335 are respectively arranged in an array with the sub-pixels in the pixel unit 33, the fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged between the columns of the pixel unit 33, and the fourth sub-pixel 334 and the fifth sub-pixel 335 are arranged in a row direction of the pixel unit 33. In the process of manufacturing the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, the light shielding layers at the corresponding positions of the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 are hollowed out, and different color filter films are deposited respectively. In this process, the light shielding layer at the corresponding position of the fourth sub-pixel 334 is retained, and the light shielding layer is used as the fourth sub-pixel 334. At the same time, the fourth sub-pixel 334 is retained at this position. The first transistor structure 34 corresponding to 334 hollows out the light shielding layer at the position corresponding to the fifth sub-pixel 335, and does not deposit any filter film. The transparent area of ​​the hollowed-out light shielding layer is directly used as the fifth sub-pixel 335. At the same time, the first transistor structure 34 corresponding to the fifth sub-pixel 335 is retained at this position. The third electrode of the first transistor structure 34 corresponding to the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333, the fourth sub-pixel 334 and the fifth sub-pixel 335 is connected to the driving unit 35 by using the first signal line 341, the second signal line 342, the third signal line 343, the fourth signal line 345 and the fifth signal line 346 respectively. The transparent state of the fifth sub-pixel 335 and the leakage size of the corresponding third electrode of the first transistor structure 34 determine the relationship between the ambient light intensity and the leakage size, that is, the leakage size is used to determine the ambient light intensity, and the fourth sub-pixel 334 and its corresponding first transistor structure 34 are used as a control group to determine the relationship between the ambient light and the leakage size. The specific principle is the same as that of the above embodiment, and will not be repeated here. At the same time, the leakage magnitudes of the third electrodes of the first transistor structures 34 corresponding to the first sub-pixel 331 , the second sub-pixel 332 and the third sub-pixel 333 are used to determine the proportions of red light, green light and blue light in the ambient light, thereby determining the type of the ambient light.

[0116] Compared with the related art, there is no need to additionally set up a photosensitive TFT module, which saves the border width. At a wide viewing angle, the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333, the fourth sub-pixel 334 and the fifth sub-pixel 335 are not blocked, and the leakage current of the third electrode corresponding to the first transistor structure 34 can be used to collect ambient light and determine the type and intensity of the ambient light.

[0117] In some embodiments, the first electrode of the first transistor structure 34 is connected to a signal scanning line 347, and the second transistor structure 36 and the sub-pixels in the pixel unit 33 are simultaneously driven by the driving unit 35 using the signal scanning line 347. Exemplarily, the signal scanning line 347 is a signal line connected to the gate.

[0118] In this embodiment, when the second transistor structure 36 is separately provided in the non-display area 32, the second transistor structure 36 and the transistor connection structures corresponding to the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 are driven simultaneously, so that the intensity of the ambient light at the current moment can be accurately detected, thereby improving the accuracy of the ambient light intensity collection.

[0119] In some embodiments, the first electrode of the first transistor structure 34 is connected to a signal scanning line 347 , and the first transistor structure 34 corresponding to the fourth sub-pixel 334 and the sub-pixels in the same row of pixel units 33 share the signal scanning line 347 .

[0120] In the present embodiment, when the fourth sub-pixel 334 is arranged in an array with the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333, the first electrodes of the first transistor structures 34 corresponding to the first sub-pixels 331, the second sub-pixels 332, the third sub-pixels 333 and the fourth sub-pixels 334 in each row are connected through the same signal scanning line 347, and the first electrodes of the fourth sub-pixel 334 and the first transistor structures 34 corresponding to the first sub-pixels 331, the second sub-pixels 332 and the third sub-pixels 333 are driven by the same scanning signal line. While preparing the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 and their corresponding first transistor structures 34, the preparation of the fourth sub-pixel 334 and its corresponding first transistor structure 34 is completed. The first transistor structures 34 corresponding to the first sub-pixels 331, the second sub-pixel 332, the third sub-pixel 333 and the fourth sub-pixel 334 in the same row are directly driven by the same signal scanning line 347, thereby saving process flow.

[0121] In some embodiments, the first electrode of the first transistor structure 34 is connected to a signal scanning line 347 , and the first transistor structure 34 corresponding to the fifth sub-pixel 335 shares the signal scanning line 347 with the sub-pixels in the same row of pixel units 33 .

[0122] Similar to the above-mentioned embodiment, while preparing the first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 and their corresponding first transistor structures 34, the preparation of the fifth sub-pixel 335 and its corresponding first transistor structure 34 is completed, and the first sub-pixel 331, the second sub-pixel 332, the third sub-pixel 333 and the first transistor structure 34 corresponding to the fifth sub-pixel 335 in the same row are directly driven by the same signal scanning line 347, saving the process flow.

[0123] In some embodiments, reference Fig.11 As shown, the non-display area 32 includes a first side and a second side opposite to each other, the first signal line 341 and the second signal line 342 extend toward the first side, and the third signal line 343 extends toward the second side;

[0124] Or the first signal line 341 extends toward the first side, and the second signal line 342 and the third signal line 343 extend toward the second side.

[0125] In this embodiment, the first side may be the left side frame of the display panel 200 , and the second side may be the right side frame of the display panel 200 , or the first side may be the right side frame of the display panel 200 , and the second side may be the left side frame of the display panel 200 .

[0126] The first sub-pixel 331, the second sub-pixel 332 and the third sub-pixel 333 and their corresponding first transistor structures 34 are all arranged in the display area, and the first signal line 341, the second signal line 342 and the third signal line 343 need to extend to the non-display area 32 to connect the driving unit 35. If the first signal line 341, the second signal line 342 and the third signal line 343 all extend to one side, the number of wirings on this side increases more, causing the width of the frame on this side to increase. Exemplarily, if they all extend to the first side, the number of wirings on the first side increases more, causing the width of the frame on the first side to increase. If the second side increases the frame width symmetrically, it causes a waste of resources. If it is not widened, the display panel 200 does not have symmetry. In the embodiment of the present application, the above-mentioned arrangement is used to achieve uniform distribution of the first signal line 341, the second signal line 342 and the third signal line 343 on the first side and the second side, so as to avoid the frame on one side from being too wide due to too much wiring. Moreover, the uniform wiring on the first side and the second side is conducive to the rational use of the wiring space. Meanwhile, the fourth sub-pixel 334 and its corresponding transistor structure 34 are arranged in the non-display area 32 , and their wiring arrangement is different from that of the first sub-pixel 331 , the second sub-pixel 332 and the third sub-pixel 333 , so the wiring position of the fourth signal line 345 is not considered here.

[0127] If the fourth sub-pixel 334 is disposed in the display area.

[0128] In some optional embodiments, reference Fig.15 As shown, the non-display area 32 includes a first side and a second side opposite to each other, and the first signal line 341 , the second signal line 342 , the third signal line 343 and the fourth signal line 345 extend uniformly toward the first side and the second side, respectively.

[0129] Exemplarily, any one of the first signal line 341, the second signal line 342 and the third signal line 343 and the fourth signal line 345 extend toward the first side, and the remaining signal lines extend toward the second side; or the first signal line 341, the second signal line 342 and the third signal line 343 extend toward the first side, and the fourth signal line 345 extends toward the second side.

[0130] Through the above arrangement, the first signal line 341, the second signal line 342, the third signal line 343 and the fourth signal line 345 are evenly distributed on the first side and the second side, so as to avoid the frame on one side being too wide due to too much wiring. Moreover, the even wiring on the first side and the second side is conducive to the rational use of the wiring space.

[0131] If the fifth sub-pixel 335 is disposed in the display area.

[0132] In some optional embodiments, reference Fig.17 As shown, the non-display area 32 includes a first side and a second side opposite to each other, and the first signal line 341 , the second signal line 342 , the third signal line 343 and the fifth signal line 346 extend uniformly toward the first side and the second side respectively.

[0133] Exemplarily, any one of the first signal line 341, the second signal line 342 and the third signal line 343 and the fifth signal line 346 extend toward the first side, and the remaining signal lines extend toward the second side; or the first signal line 341, the second signal line 342 and the third signal line 343 extend toward the first side, and the fifth signal line 346 extends toward the second side.

[0134] Through the above arrangement, the first signal line 341, the second signal line 342, the third signal line 343 and the fifth signal line 346 are evenly distributed on the first side and the second side, so as to avoid the frame on one side being too wide due to too much wiring. Moreover, the even wiring on the first side and the second side is conducive to the rational use of the wiring space.

[0135] If the fourth sub-pixel 334 and the fifth sub-pixel 335 are both disposed in the display area.

[0136] In some optional embodiments, reference Fig.16 As shown, the non-display area 32 includes a first side and a second side opposite to each other, and the first signal line 341 , the second signal line 342 , the third signal line 343 , the fourth signal line 345 and the fifth signal line 346 extend uniformly toward the first side and the second side, respectively.

[0137] Illustratively, the first signal line 341 , the second signal line 342 , and the third signal line 343 extend toward the first side, and the fourth signal line 345 and the fifth signal line 346 extend toward the second side.

[0138] Through the above arrangement, the first signal line 341, the second signal line 342, the third signal line 343, the fourth signal line 345 and the fifth signal line 346 are evenly distributed on the first side and the second side, so as to avoid the frame on one side being too wide due to too much wiring. Moreover, the even wiring on the first side and the second side is conducive to the rational use of the wiring space.

[0139] Based on the same inventive concept, Fig.18 As shown, an embodiment of the present application provides a display panel light sensing driving method, comprising:

[0140] S10, using a driving unit to respectively detect a first voltage value at the start time and a second voltage value at the end time of a non-display state of a sub-pixel in a pixel unit in any frame;

[0141] S11, determining a first voltage difference according to the first voltage value and the second voltage value;

[0142] In the display state of the sub-pixel in any frame, the first electrode (gate) signal is turned on, and the second electrode (source) signal voltage rushes to the sub-pixel. The sub-pixel is in the non-display state in this frame, and the first electrode signal of the transistor structure corresponding to the sub-pixel is turned off. After receiving ambient light, electricity leaks through the third electrode (drain). The first voltage difference is obtained by subtracting the first voltage value and the second voltage value detected at the beginning and end of the non-display state, and the leakage value is determined.

[0143] S12, determining the ambient light intensity using a predetermined first relationship curve between the voltage difference and the ambient light intensity and the first voltage difference;

[0144] In this step, the leakage value of the third electrode of a certain light source at different intensities is collected in advance to generate a relationship curve between the leakage value and the light source at different light intensities; the leakage current value of the third sub-pixel corresponding to the first transistor structure of different light sources at a certain light intensity is collected in advance, and the light intensity coefficients of different light sources are determined by combining the above-mentioned relationship curve between the light intensity and the leakage value collected in advance, and the relationship coefficients of different light sources and the light sources collected in advance at a certain light intensity are recorded, so as to determine the ambient light intensity through the first voltage difference.

[0145] S13 . Determine the type of ambient light by using the predetermined corresponding relationship between the voltage difference ratio of each sub-pixel and the type of ambient light and the first voltage difference.

[0146] In this step, the leakage size of the third electrode of the first transistor structure corresponding to the first sub-pixel and the leakage size of the third electrode of the first transistor structure corresponding to the second sub-pixel in different light sources are collected in advance to determine the proportion of red light, green light and blue light in different light sources, and the corresponding ambient light type is obtained through the first voltage difference.

[0147] In some embodiments, the method further comprises:

[0148] S21, using a driving unit to detect a third voltage value at the start time and a fourth voltage value at the end time of a non-display state in a frame corresponding to a second transistor structure in a non-display area and a sub-pixel in a pixel unit;

[0149] S22, determining a second voltage difference according to the third voltage value and the fourth voltage value;

[0150] The sub-pixels in the display area and their corresponding first transistor structures are used as a photosensitive TFT module, wherein the first transistor structure not only leaks electricity due to the influence of ambient light, but also leaks electricity due to the influence of temperature. The second voltage difference of the second transistor structure in the non-display state is used to determine the leakage magnitude affected by temperature.

[0151] S23, determining temperature interference using a predetermined second relationship curve between a second voltage difference and temperature;

[0152] The relationship between the second voltage difference and the difference between the external temperature and a certain fixed ambient temperature is determined by collecting the leakage value of the third electrode of the second transistor structure in advance.

[0153] S24, determining a third voltage difference by using the difference between the first voltage difference and the second voltage difference;

[0154] The third voltage difference is determined by using the difference between the first voltage difference and the second voltage difference to eliminate the leakage caused by temperature.

[0155] S25, determining a final ambient light intensity using a predetermined first relationship curve between the voltage difference and the ambient light intensity and the third voltage difference;

[0156] In this step, step S12 is used to determine the final ambient light intensity through the third voltage difference, and the final ambient light intensity is the ambient light intensity after eliminating the influence of temperature.

[0157] S26 , determining a final ambient light type by using the predetermined correspondence between the voltage difference ratio of each sub-pixel and the ambient light type and the third voltage difference.

[0158] In this step, step S13 is used to determine the final ambient light type through the third voltage difference, and the final ambient light type is the ambient light type that eliminates the temperature effect.

[0159] S27: Determine the brightness of the display panel according to the final ambient light type and the final ambient light intensity.

[0160] Based on the same inventive concept, Fig.19 As shown, the embodiment of the present application provides a display device 300, including the display panel 200 in any of the above embodiments. In some examples, the display device 90 can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame or a navigator. However, this embodiment is not limited to this.

[0161] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0162] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present application difficult to understand, the known power supply / ground connection with the integrated circuit (IC) chip and other components may or may not be shown in the provided drawings. In addition, the device can be shown in the form of a block diagram to avoid making the embodiments of the present application difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform to be implemented in the embodiments of the present application (that is, these details should be fully within the scope of understanding of those skilled in the art). In the case of elaborating specific details (e.g., circuits) to describe exemplary embodiments of the present application, it is obvious to those skilled in the art that the embodiments of the present application can be implemented without these specific details or when these specific details are changed. Therefore, these descriptions should be considered to be illustrative rather than restrictive.

[0163] Although the present application has been described in conjunction with specific embodiments of the present application, many replacements, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.

[0164] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

Claims

1. A display panel, characterized in that: include: A display area and a non-display area surrounding the display area or partially surrounding the display area; The display area includes pixel units arranged in an array, a first transistor structure arranged corresponding to sub-pixels in the pixel units, and a plurality of signal lines; wherein the first transistor structure includes a first electrode, a second electrode, and a third electrode; the first ends of the plurality of signal lines are respectively connected to the third electrode of the first transistor structure corresponding to at least one row of sub-pixels of the same color, and the second ends extend toward the non-display area; The non-display area includes a driving unit connected to the second ends of the plurality of signal lines.

2. The display panel according to claim 1, characterized in that: The sub-pixels in the pixel unit include a first sub-pixel, a second sub-pixel and a third sub-pixel; The plurality of signal lines include a first signal line, a second signal line, and a third signal line; A first end of the first signal line is connected to a third electrode of a first transistor structure corresponding to at least one row of the first sub-pixels, and a second end of the first signal line is connected to the driving unit; A first end of the second signal line is connected to a third electrode of a first transistor structure corresponding to at least one row of the second sub-pixels, and a second end of the second signal line is connected to the driving unit; The first end of the third signal line is connected to the third electrode of the first transistor structure corresponding to at least one row of the third sub-pixels, and the second end is connected to the driving unit.

3. The display panel according to claim 2, characterized in that: The first sub-pixel, the second sub-pixel and the third sub-pixel connected to the driving unit are respectively located in pixel units of different rows.

4. The display panel according to claim 2, characterized in that: Also includes a second transistor structure and a fourth signal line disposed in the non-display area, wherein the second transistor structure includes a first electrode, a second electrode and a third electrode; A first end of the fourth signal line is connected to the third electrode of the second transistor structure, and a second end thereof is connected to the driving unit; At least one shielding layer is disposed on a side of the second transistor structure facing the light emitting direction.

5. The display panel according to claim 2, characterized in that: It also includes a fourth sub-pixel arranged in the display area, the first transistor structure corresponding to the fourth sub-pixel, and a fourth signal line, the fourth sub-pixel is arranged in the sub-pixel array in the pixel unit; a first end of the fourth signal line is connected to the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and a second end extends to the non-display area and is connected to the driving unit; The fourth sub-pixel is black.

6. The display panel according to claim 2, characterized in that: It also includes a fourth sub-pixel and a fifth sub-pixel arranged in the display area, and the first transistor structure, a fourth signal line and a fifth signal line respectively corresponding to the fourth sub-pixel and the fifth sub-pixel, wherein the fourth sub-pixel and the fifth sub-pixel are respectively arranged in an array with sub-pixels spaced apart in the pixel unit, A fourth sub-pixel and a fifth sub-pixel are arranged between the columns of the pixel units, and the fourth sub-pixel and the fifth sub-pixel are arranged at intervals along the row direction of the pixel units; A first end of the fourth signal line is connected to the third electrode of the first transistor structure corresponding to the fourth sub-pixel, and a second end thereof extends toward the non-display area and is connected to the driving unit; A first end of the fifth signal line is connected to the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and a second end thereof extends toward the non-display area and is connected to the driving unit; The fourth sub-pixel is black, and the fifth sub-pixel is transparent.

7. The display panel according to claim 2, characterized in that: It also includes a fifth sub-pixel arranged in the display area, the first transistor structure corresponding to the fifth sub-pixel, and a fifth signal line, the fifth sub-pixel is arranged in the sub-pixel array in the pixel unit; a first end of the fifth signal line is connected to the third electrode of the first transistor structure corresponding to the fifth sub-pixel, and a second end extends to the non-display area and is connected to the driving unit; The fifth sub-pixel is transparent.

8. The display panel according to claim 4, characterized in that: The second transistor structure is disposed on a side of the non-display area close to the driving unit.

9. The display panel according to claim 4, characterized in that: The first electrode of the first transistor structure is connected to a signal scanning line, and the second transistor structure and the sub-pixels in the pixel unit are driven by the driving unit using the signal scanning line at the same time.

10. The display panel according to any one of claims 5 to 6, characterized in that: The first electrode of the first transistor structure is connected to a signal scanning line, and the first transistor structure corresponding to the fourth sub-pixel shares the signal scanning line with the sub-pixels in the pixel unit located in the same row.

11. The display panel according to any one of claims 6 to 7, characterized in that: The first electrode of the first transistor structure is connected to a signal scanning line, and the first transistor structure corresponding to the fifth sub-pixel shares the signal scanning line with the sub-pixels in the pixel unit located in the same row.

12. The display panel according to claim 2, characterized in that: The non-display area includes a first side and a second side opposite to each other, the first signal line and the second signal line extend toward the first side, and the third signal line extends toward the second side; Or the first signal line extends toward the first side, and the second signal line and the third signal line extend toward the second side.

13. A display panel light sensing driving method, characterized in that: Applicable to the display panel according to any one of claims 1 to 12, the method comprising: Using the driving unit to respectively detect a first voltage value at a start time and a second voltage value at an end time of a non-display state of a sub-pixel in the pixel unit in any frame; determining a first voltage difference according to the first voltage value and the second voltage value; Determine the ambient light intensity using a predetermined first relationship curve between the voltage difference and the ambient light intensity and the first voltage difference; The type of ambient light is determined by using the predetermined corresponding relationship between the voltage difference ratio of each sub-pixel in the pixel unit and the type of ambient light and the first voltage difference.

14. The method according to claim 13, characterized in that The method further comprises: using the driving unit to detect a third voltage value at the start time and a fourth voltage value at the end time of the non-display state in the frame corresponding to the second transistor structure and the sub-pixel in the pixel unit; determining a second voltage difference according to the third voltage value and the fourth voltage value; Determine the temperature disturbance by using a predetermined second relationship curve between the second voltage difference and the temperature; Determine a third voltage difference using a difference between the first voltage difference and the second voltage difference; Determine a final ambient light intensity using a predetermined first relationship curve between the voltage difference and the ambient light intensity and the third voltage difference; Determine a final ambient light type by using a predetermined correspondence between the voltage difference ratio of each sub-pixel and the ambient light type and the third voltage difference; The brightness of the display panel is determined according to the final ambient light type and the final ambient light intensity.

15. A display device, characterized in that: Comprising a display panel as described in any one of claims 1-12.

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