Lumped parameter ring packer laminated film electrode ferrite assembly
Through the laminated film electrode structure and circuit board process, the problems of low production efficiency and poor consistency of ring spacers in the prior art are solved, and efficient and low-cost production is achieved, which is suitable for low loss and high isolation of 4G and 5G communication base stations. characteristic.
Patent Information
- Application Number
- CN202411605540.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-12
- Publication Date
- 2025-01-03
AI Technical Summary
During the production process of existing miniaturized centralized parameter ring spacers, the central conductor formation and electrode integration process are cumbersome, the efficiency is low, and the product consistency is poor, making it difficult to meet the needs of 4G and 5G communications.
The laminated thin film electrode structure is adopted, and the integrated molding is achieved through the mature circuit board process etching and pressing, combining metallized vias and electrode port deformation bending structures to improve production efficiency and consistency, and different batch production modes are applicable.
It improves production efficiency and product consistency, reduces costs, and achieves low loss and high isolation characteristics near the 2.1GHz frequency, and is suitable for 4G and 5G communication base stations.
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Figure CN119253221A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of communication devices, and in particular relates to a lumped parameter ring spacer laminated film electrode ferrite component. Background Art
[0002] With the popularization of 4G and 5G communications, the market has a large demand for miniaturized centralized parameter ring spacers. In the production process of this type of device, the center conductor is formed, the electrodes are mechanically bent, and the wrapping process is used to integrate the ferrite with the multi-layer electrodes. The process is cumbersome, inefficient, and the product consistency is poor.
[0003] With the original intention of reducing costs and improving production efficiency, this patent proposes a variety of laminated planar electrode structures, which can utilize the mature process of circuit board manufacturing, etching, pressing, and one-piece molding. Compared with mechanical bending and manual shaping, production efficiency and product consistency can be greatly improved. Summary of the invention
[0004] In order to solve the above problems, the present invention provides a lumped parameter ring spacer laminated thin film electrode ferrite component, which realizes the signal loop and isolation effect in the circuit, and improves the stability and reliability of the circuit operation.
[0005] The present invention adopts the following technical solutions to solve the above problems:
[0006] A lumped parameter ring spacer laminated film electrode ferrite component comprises a laminated film electrode and a ferrite electrode which are pressed together. The laminated film electrode is arranged on the upper layer of the ferrite electrode. The laminated film electrode and the ferrite electrode are interconnected through a connecting structure. The laminated film electrode comprises a plurality of groups of alternately distributed dielectric films and electrodes. The electrodes are electrically insulated by the dielectric films. The middle positions of the plurality of groups of electrodes overlap. The endpoints of the electrodes are located at the edge of the dielectric film. The ferrite electrode comprises a single-sided metallized ferrite sheet. The non-metallized surface of the ferrite sheet is connected to the laminated film electrode. The connecting structure is located at the edge of the ferrite electrode and corresponds to the plurality of electrode endpoints.
[0007] Furthermore, the dielectric film includes a first dielectric film, a second dielectric film and a third dielectric film, the plurality of groups of electrodes include a first electrode, a second electrode and a third electrode, and the first electrode, the second electrode and the third electrode are distributed at an angle of degrees.
[0008] Furthermore, the length, width and shape characteristics of the first electrode, the second electrode and the third electrode may be different depending on the frequency characteristics of the device, and the two edges of the first electrode, the second electrode and the third electrode are flush with the edges of the first dielectric film, the second dielectric film and the third dielectric film respectively.
[0009] Furthermore, the size of the ferrite sheet is flush with the thin film electrode, the edge of the ferrite sheet is punched, each punched location is made with a metallized via, the metallized via corresponds to the end point position of each group of electrodes one by one, and is connected after welding.
[0010] Furthermore, an annular dielectric epitaxial ring is arranged outside the ferrite sheet, and a single-sided metallized ferrite sheet is embedded in the annular dielectric cavity of the annular dielectric epitaxial ring.
[0011] Furthermore, the size of the annular dielectric epitaxial ring is flush with the thin film electrode, the edge has multiple half holes, and the interior is provided with metallized vias, the positions of the metallized vias correspond one-to-one to the end positions of each group of the electrodes, and are connected after welding.
[0012] Furthermore, the thin film electrode and the ferrite electrode are welded together to form a thin film ferrite assembly, and the thin film ferrite assembly is a core component of the lumped parameter ring spacer, which is mounted on a PCB substrate and connected to a PCB circuit.
[0013] Furthermore, the length and width of the first electrode, the second electrode and the third electrode are slightly larger than those of the first dielectric film, the second dielectric film and the third dielectric film by about 0.5-1 mm, and the portion of the electrode that exceeds the dielectric film is used for pressing and folding.
[0014] Furthermore, the thin film electrode and the non-metallized surface of the ferrite electrode are bonded together to form a thin film ferrite assembly, and the thin film ferrite assembly is a core component of the lumped parameter ring spacer and is mounted on the PCB substrate of the ring spacer cavity.
[0015] Furthermore, the thin film ferrite component and PCB substrate assembly is covered with a film and evacuated. Under the action of air pressure, the electrodes extending beyond the thin film ferrite component are subjected to pressure, deformed and bent, and closely attached to the PCB substrate.
[0016] The beneficial effects of the present invention are:
[0017] 1. This patent proposes a variety of laminated planar electrode structures, which can utilize the mature process of circuit board manufacturing, etching, pressing, and one-piece molding. Compared with mechanical bending and manual shaping, the production efficiency and product consistency can be greatly improved, thereby reducing costs and improving production efficiency.
[0018] 2. This patent proposes a variety of laminated planar electrode structures, which make greater use of planar etching, punching, and pressing processes. The electrodes produced have good batch consistency and the cost is reduced.
[0019] 3. The thin film laminated ferrite component is mounted on the PCB board and interconnected with the matching circuit on the PCB to form a complete device. This structure makes more use of planar etching, punching and pressing processes, and the batch production consistency of the electrodes is good, and the cost is compressed.
[0020] 4. This patent proposes a variety of laminated planar electrode structures, which can be interconnected with the PCB substrate using a metallized via structure or an electrode port deformation bending structure as needed. Different structures are suitable for different batch production modes, with flexible structures and a wide range of applications.
[0021] 5. The device has low loss and high isolation characteristics near the 2.1GHZ frequency and is used in 4G and 5G communication base stations. With the widespread popularization of 4G and 5G communications, its application will gradually expand. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the specific embodiments of the present invention, the following will briefly introduce the drawings required for the description of the specific embodiments. The drawings described below are example drawings of the elastic wave device involving the interdigital transducer described above. Obviously, the drawings described below are only exemplary, and for ordinary technicians in this field, other embodiment drawings can be derived from the provided drawings without creative work.
[0023] Figure 1 is a schematic diagram of the layered structure of the thin film ferrite component in Example 1;
[0024] Figure 2 is a schematic structural diagram of the laminated thin film electrode pressed in Example 1;
[0025] Figure 3 is a schematic structural diagram of a ferrite electrode in Example 1;
[0026] Figure 4 is a schematic diagram of the overall shape of the thin film ferrite assembly after lamination in Example 1;
[0027] Figure 5 is a schematic structural diagram of a bowl-shaped thin film electrode ferrite component mounted on a PCB in Example 1;
[0028] Figure 6 is a schematic diagram of the layered structure of the thin film ferrite component in Example 2;
[0029] Figure 7 is a schematic diagram of the overall shape of the thin film ferrite assembly after lamination in Example 2;
[0030] Figure 8 is a schematic structural diagram of a bowl-shaped thin film electrode ferrite component mounted on a PCB in Example 2;
[0031] Fig. 9 is a schematic diagram of the layered structure of the thin film ferrite component in Example 3;
[0032] Fig.10 is a schematic structural diagram of the electrode appearance after the film for assisting vacuuming in Example 3 has been removed and pressed;
[0033] Fig.11 It is a schematic diagram of the structure in which the bowl-shaped thin film electrode ferrite component pressed in Example 3 is mounted on a PCB board;
[0034] Fig.12 It is a schematic diagram of device simulation results.
[0035] In the figure, 1-first dielectric film; 2-first electrode; 3-second dielectric film; 4-second electrode; 5-third dielectric film; 6-third electrode; 7-ferrite sheet; 8-bottom metallization layer of ferrite sheet; 9-metallized via; 10-annular dielectric epitaxial ring; 11-thin film ferrite component; 12-PCB substrate. DETAILED DESCRIPTION
[0036] The exemplary embodiments of the present patent will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present patent are shown in the accompanying drawings, it should be understood that the present patent can be implemented in various forms and should not be limited by the embodiments described herein; on the contrary, these embodiments are provided to enable a more thorough understanding of the present patent and to fully convey the scope of the present patent to those skilled in the art. It should be noted that the embodiments and features in the embodiments of the present patent can be combined with each other without conflict. The present patent will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0037] like Figure 5 , Figure 8 , Fig.11As shown, the present invention provides a lumped parameter ring spacer laminated thin film electrode ferrite component, including a laminated thin film electrode and a ferrite electrode that are pressed together, the thin film electrode is arranged on the upper layer of the ferrite electrode, the laminated thin film electrode and the ferrite electrode are interconnected through a connecting structure, the laminated thin film electrode includes multiple groups of alternately distributed dielectric films and electrodes, the dielectric film adopts resin or other low-loss organic films, and the electrode is made of copper or silver; the electrodes are electrically insulated by the dielectric film, the middle positions of the multiple groups of electrodes overlap, and the end points of the electrodes are located at the edge of the dielectric film, the ferrite electrode includes a single-sided metallized ferrite sheet 7, the bottom of the ferrite sheet 7 is metallized to form a ferrite bottom metallization layer 8, the non-metallized surface of the ferrite sheet 7 is connected to the laminated thin film electrode, the connecting structure is located at the edge of the ferrite electrode and corresponds to multiple electrode end points, the thin film electrode and the ferrite electrode are welded together to form a thin film ferrite component 11, and the thin film ferrite component 11 is a core component of the lumped parameter ring spacer and is mounted on a PCB substrate and connected to a PCB circuit.
[0038] Example 1
[0039] like Figure 1-Figure 5 As shown, the dielectric film includes a first dielectric film 1, a second dielectric film 3 and a third dielectric film 5, and the plurality of groups of electrodes include a first electrode 2, a second electrode 4 and a third electrode 6, which are distributed at an angle of 120 degrees. The length, width and shape characteristics of the first electrode 2, the second electrode 4 and the third electrode 6 may be different due to different device frequency characteristics. The two edges of the first electrode 2, the second electrode 4 and the third electrode 6 are flush with the edges of the first dielectric film 1, the second dielectric film 3 and the third dielectric film 5 respectively. The size of the ferrite sheet 7 is flush with the edges of the first dielectric film 1, the second dielectric film 3 and the third dielectric film 5, that is, flush with the laminated thin film electrode. The edge of the ferrite sheet 7 is punched, and a metallized via 9 is made at each punched position. The metallized via 9 corresponds to the end position of each group of electrodes one by one and is connected after welding.
[0040] like Figure 1 , Figure 2 As shown, this embodiment utilizes PCB lamination technology to press the first electrode 2, the second electrode 4, and the third electrode 6 together through the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5, respectively, and are distributed at an angle of 120 degrees. The electrodes are electrically insulated by the dielectric film. The length, width, and shape characteristics of the electrodes may be different depending on the frequency characteristics of the device. There are six endpoints at both ends of the three electrodes.
[0041] like Figure 1 , Figure 3As shown, the ferrite sheet 7 is punched, electrodes are made on both sides and interconnected through metallized holes. In this embodiment, the ferrite sheet 7 is made of gyromagnetic ferrite, and its saturation magnetic moment is several hundred to one thousand eight hundred gauss, depending on the selection of different frequency devices. The six pad holes of the electrode correspond to the six end positions of the thin film electrode one by one, and are connected after welding; Figure 4 As shown, the thin film electrode and the electrode on the ferrite surface are welded together to form a combination, namely, a thin film ferrite assembly 11.
[0042] like Figure 5 As shown, the thin film ferrite component 11 is the core component of the lumped parameter ring spacer and is mounted on the ring spacer cavity PCB substrate 12, connected to the PCB circuit, and the PCB circuit provides a matching network to form a complete device.
[0043] Example 2
[0044] like Figure 6-Figure 8 As shown, the present embodiment provides a bowl-shaped (i.e., conductive sidewall) laminated thin film electrode ferrite component with vias, an annular dielectric epitaxial ring 10 is arranged on the outside of the ferrite sheet 7, and the annular dielectric cavity of the annular dielectric epitaxial ring 10 is embedded with a single-sided metallized ferrite sheet 7, the size of the annular dielectric epitaxial ring 10 is flush with the thin film electrode, there are six and a half holes on the edge, and metallized vias 9 are arranged inside, the positions of the metallized vias 9 correspond one-to-one to the end points of each group of electrodes, and they are connected after welding. Other technical features are the same as those in Example 1.
[0045] In this embodiment, the structure of the thin film electrode is the same as that of Embodiment 1. Embodiment 2 adds a circle of dielectric epitaxy to the ferrite electrode layer, and makes six metallized vias 9 in this epitaxial ring to form upper and lower interconnections. The metallized vias 9 of Embodiment 1 are made at the edge of the ferrite sheet, and the processing methods and costs of the two are different.
[0046] like Figure 6 As shown, by using the PCB lamination process, the first electrode 2, the second electrode 4, and the third electrode 6 are pressed together through the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5, respectively, and are distributed at an angle of 120 degrees. The electrodes are electrically insulated by the dielectric film. The length, width, and shape characteristics of the electrodes can be different depending on the frequency characteristics of the device. There are six endpoints at both ends of the three electrodes; the size of the annular dielectric epitaxial ring 10 is flush with the upper thin film electrode, and there are six half holes on the edge. The inside is metallized, and the position of the metallized hole corresponds to the six endpoints of the upper surface thin film electrode one by one. After welding, they are connected, and six pads are exposed at the bottom of the annular dielectric.
[0047] like Figure 7 As shown, a single-sided metallized ferrite sheet 7 is embedded in the annular dielectric cavity, with the metallized surface facing outward. In this embodiment, the ferrite sheet 7 is a gyromagnetic ferrite, and its saturation magnetic moment is several hundred to one thousand eight hundred gauss, which is selected according to different frequency devices.
[0048] like Figure 8 As shown, the thin film electrode, the conductive through-hole medium on the side wall of the annular belt, and the ferrite sheet 7 together constitute the core component of the lumped ring spacer, which is mounted on the PCB substrate 12 of the ring spacer cavity. The six solder joints at the bottom of the component are interconnected with the corresponding electrodes on the PCB and connected to the PCB circuit. The PCB circuit provides a matching network to form a complete device.
[0049] Example 3
[0050] like Figure 9-11 As shown, this embodiment provides a pressed bowl-shaped laminated thin film electrode ferrite component. Compared with Embodiment 1 and Embodiment 2, the length and width dimensions of the first electrode 2, the second electrode 4 and the third electrode 6 are slightly larger than the first dielectric film 1, the second dielectric film 3 and the third dielectric film 5 by about 0.5-1 mm. The portion of each electrode that exceeds the dielectric film is used for pressing and folding, that is, the connecting structure in this embodiment is the edge of the thin film motor.
[0051] Compared with Example 1 and Example 2, both Example 1 and Example 2 have metallized vias. This embodiment uses vacuum pressing to interconnect the six ports of the thin film electrode with the underlying PCB board through deformation and bending. Different structures are suitable for different batch production modes.
[0052] like Fig. 9 , Fig.11 As shown, the PCB lamination process is used to press the first electrode 2, the second electrode 4, and the third electrode 6 shown in the figure together through the first dielectric film 1, the second dielectric film 3, and the third dielectric film 5, respectively, and they are distributed at an angle of 120 degrees; the electrodes are electrically insulated by the dielectric film, and the length, width, and shape characteristics of the electrodes can be different depending on the frequency characteristics of the device. The entire electrode is a laminated planar structure. The length and width of the thin film electrode is slightly about 0.5-1mm larger than the size of the ferrite sheet, and the excess part is used for pressing and folding, and the bottom surface of the ferrite sheet 7 is metallized to form a metallized layer 8 at the bottom of the ferrite sheet. The thin film electrode and the non-metallized surface of the ferrite electrode are bonded together to form a combination, and the centers of the two are aligned and the edges are parallel. Since the thin film electrode is larger than the ferrite, the edge of the thin film electrode protrudes from the ferrite. The combination is the core component of the lumped parameter ring spacer and is mounted on the PCB substrate 12 of the ring spacer cavity.
[0053] like Fig.10 As shown, the PCB assembly is covered with a film and evacuated. Under the action of air pressure, the protruding ferrite electrode is subjected to pressure, deformed and bent, and tightly attached to the PCB substrate 12. The six ports of the film electrode correspond one by one to the positions of the electrodes (covered with the solder layer) on the PCB and are pressed tightly under the action of air pressure.
[0054] like Fig.11As shown, the electrodes of the thin film ferrite component 11 are interconnected with the lower PCB through a welding process, and the corresponding matching inductance and capacitance are connected at each electrode port to achieve device performance.
[0055] Simulation Example
[0056] The thin film laminated ferrite components 11 of Example 1, Example 2, and Example 3 are mounted on a PCB substrate 12 and interconnected with the matching circuit on the PCB to form a complete device, such as Fig.12 Figure 2 shows a simulation example of a 2.1 GHz isolator.
[0057] The simulation example uses 2.5*2.0*0.25mm 3 The ferrite is embedded in a bowl-shaped laminated thin-film electrode with an epitaxial size of 3.2*2.7. The three output stage ports are connected in parallel with a 1.6pF capacitor to the ground. The simulation performance shows that the transmission loss from end 1 to end 2 of the device is less than 0.6dB, and the isolation from end 2 to end 1 is greater than 20dB in the passband. The echoes at the three ports are very small, and the device shows excellent performance.
[0058] This device has low loss and high isolation characteristics near the 2.1GHZ frequency, and is compact in size, making it convenient for use in 4G and 5G communication base stations.
[0059] It should be noted that the content and exemplary embodiments of this article are only used to illustrate the technical solution of this patent, but the implementation of this patent is not limited by the above content. Any other changes, modifications, substitutions, combinations, etc. that do not deviate from the innovative essence and principles of this patent are included in the protection scope of this patent. For those skilled in the art, the specific meanings of the above terms in the patent can be understood according to the specific circumstances.
Claims
1. A lumped parameter ring spacer laminated thin film electrode ferrite component, characterized in that: The invention comprises a laminated thin film electrode and a ferrite electrode which are pressed together. The laminated thin film electrode is arranged on the upper layer of the ferrite electrode. The laminated thin film electrode and the ferrite electrode are interconnected via a connecting structure. The laminated thin film electrode comprises a plurality of groups of alternately distributed dielectric films and electrodes. The electrodes are electrically insulated by the dielectric films. The middle positions of the plurality of groups of electrodes overlap. The end points of the electrodes are located at the edge of the dielectric film. The ferrite electrode comprises a single-sided metallized ferrite sheet (7). The non-metallized surface of the ferrite sheet (7) is connected to the laminated thin film electrode. The connecting structure is located at the edge of the ferrite electrode and corresponds to the end points of the plurality of electrodes.
2. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 1, characterized in that: The dielectric film comprises a first dielectric film (1), a second dielectric film (3) and a third dielectric film (5); the plurality of groups of electrodes comprise a first electrode (2), a second electrode (4) and a third electrode (6); the first electrode (2), the second electrode (4) and the third electrode (6) are distributed at an angle of 120 degrees.
3. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 2, characterized in that: The length, width and shape characteristics of the first electrode (2), the second electrode (4) and the third electrode (6) may be different depending on the frequency characteristics of the device, and the two edges of the first electrode (2), the second electrode (4) and the third electrode (6) are respectively flush with the edges of the first dielectric film (1), the second dielectric film (3) and the third dielectric film (5).
4. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 1, characterized in that: The size of the ferrite sheet (7) is flush with the laminated thin film electrode. The edge of the ferrite sheet (7) is punched, and a metallized via (9) is made at each punched position. The metallized via (9) corresponds to the end point position of each group of electrodes one by one and is connected after welding.
5. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 1, characterized in that: An annular dielectric epitaxial ring (10) is arranged outside the ferrite sheet (7), and a single-sided metallized ferrite sheet (7) is embedded in an annular dielectric cavity of the annular dielectric epitaxial ring (10).
6. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 5, characterized in that: The size of the annular dielectric epitaxial ring (10) is flush with the thin film electrode, the edge has a plurality of half holes, and the interior is provided with metallized vias (9). The positions of the metallized vias (9) correspond one-to-one to the end positions of each group of electrodes, and are connected after welding.
7. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 1, characterized in that: The thin film electrode and the ferrite electrode are welded together to form a thin film ferrite component (11); the thin film ferrite component (11) is a core component of a lumped parameter ring spacer, mounted on a PCB substrate, and connected to a PCB circuit.
8. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 2, characterized in that: The length and width of the first electrode (2), the second electrode (4) and the third electrode (6) are slightly larger than those of the first dielectric film (1), the second dielectric film (3) and the third dielectric film (5) by about 0.5-1 mm, and the portion of the electrode that protrudes beyond the dielectric film is used for pressing and folding.
9. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 8, characterized in that: The thin film electrode and the non-metallized surface of the ferrite electrode are bonded together to form a thin film ferrite component (11); the thin film ferrite component (11) is a core component of the lumped parameter ring spacer and is mounted on a PCB substrate (12) of the ring spacer cavity.
10. The lumped parameter ring spacer laminated thin film electrode ferrite component according to claim 9, characterized in that: The thin film ferrite component (11) and the PCB substrate (12) assembly are covered with a film and evacuated. Under the action of air pressure, the electrodes extending beyond the thin film ferrite component (11) are subjected to pressure, deform and bend, and closely adhere to the PCB substrate (12).