Method for preparing Real RGB OLEDoS through anodic protection

Abstract

The invention provides a method for preparing Real RGB OLEDoS through anodic protection, and belongs to the technical field of semiconductors. The invention provides a method for preparing Real RGB OLEDoS through anodic protection, and the method comprises the steps: firstly forming a first dielectric material layer (200), and then carrying out the first etching, the third etching and the fifth etching through employing a photoetching photoresist removing technology, thereby exposing an anode structure (110) of a sub-pixel region, achieving the protection of an anode, and improving the quality and yield of Real RGB OLEDoS.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method for preparing Real RGB OLEDoS by using anode protection. Background Art

[0002] The current mainstream technology solution for silicon-based OLED (OLEDoS) microdisplays is white light OLED (WOLED) emitting light, which generates RGB three colors through a color filter (CF) to achieve full-color display. The main problems of this technology are low efficiency and serious crosstalk between sub-pixels. The Real RGB structure is that the R / G / B three-color OLED is on the corresponding sub-pixel, and the specific structural diagram is as follows Figure 1 As shown in the figure, since this structure does not use CF, its efficiency is much higher than the traditional WOLED+CF solution. In addition, the reasonable Real RGB structure can also effectively reduce the crosstalk problem between sub-pixels.

[0003] Prior art, such as Chinese patent CN115720461A, discloses a method for preparing a silicon-based OLED microdisplay, which includes the steps of preparing a CMOS driving circuit on a silicon substrate, preparing an anode layer on the CMOS driving circuit, and preparing an OLED film layer, a cathode layer and an optical covering layer on the anode layer. However, there is a problem that the anode material is easily damaged. Summary of the invention

[0004] In view of this, an object of the present invention is to provide a method for preparing Real RGB OLEDoS by anode protection, which can achieve protection of anode materials.

[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0006] The present invention provides a method for preparing Real RGB OLEDoS by anode protection, wherein the Real RGB OLEDoS comprises:

[0007] Silicon-based backplane 100;

[0008] Sub-pixel areas, the number of the sub-pixel areas is 3N, wherein N≥1, the sub-pixel areas include an anode structure 110, an OLED functional material layer, a cathode layer 600 and a thin film encapsulation layer 700 which are stacked in sequence, the anode structure 110 is embedded in the upper surface of the silicon-based backplane 100, the sub-pixel areas are arranged at intervals by spacing units, the spacing units include a first dielectric material layer 200, a conductor material layer 300 and a second dielectric material layer 400 which are stacked in sequence, the first dielectric material layer 200 is arranged on the upper surface of the silicon-based backplane 100; the OLED functional material layers of the three sub-pixel areas are a first sub-pixel area OLED functional material layer 500, a second sub-pixel area OLED functional material layer 800 and a third sub-pixel area OLED functional material layer 900, the colors of the first sub-pixel area OLED functional material layer 500, the second sub-pixel area OLED functional material layer 800 and the third sub-pixel area OLED functional material layer 900 are RGB any color emitting light and are all different;

[0009] The method comprises the following steps:

[0010] A first dielectric material layer precursor 200 - 1 , a conductor material layer precursor 300 - 1 , and a second dielectric material layer precursor 400 - 1 are sequentially deposited on the upper surfaces of the silicon-based backplane 100 and the anode structure 110 ;

[0011] Performing bottom incision on the conductor material layer precursor 300 - 1 and the second dielectric material layer precursor 400 - 1 to form the conductor material layer 300 and the second dielectric material layer 400 ;

[0012] Performing a first etching on the first dielectric material layer precursor 200-1 to expose the anode structure 110 of the first sub-pixel region, and then sequentially performing a first deposition of the first sub-pixel region OLED functional material layer 500, cathode layer 600 and thin film encapsulation layer 700 to form the first sub-pixel region;

[0013] Performing a second etching on the OLED functional material layer 500, the cathode layer 600 and the thin film encapsulation layer 700 in the first sub-pixel region other than the first sub-pixel region;

[0014] Performing a third etching on the first dielectric material layer precursor 200-1 to expose the anode structure 110 of the second sub-pixel region, and then sequentially depositing the second sub-pixel region OLED functional material layer 800, cathode layer 600 and thin film encapsulation layer 700 to form the second sub-pixel region;

[0015] Performing a fourth etching to remove the second sub-pixel region OLED functional material layer 800, the cathode layer 600, and the thin film encapsulation layer 700 formed by the second deposition and not in the second sub-pixel region;

[0016] The first dielectric material layer precursor 200-1 is subjected to a fifth etching to expose the anode structure 110 of the third sub-pixel region to form the first dielectric material layer 200, and then the third sub-pixel region OLED functional material layer 900, cathode layer 600 and thin film encapsulation layer 700 are sequentially deposited for a third time to form a third sub-pixel region;

[0017] A sixth etching is performed to remove the OLED functional material layer 900 , the cathode layer 600 , and the thin film encapsulation layer 700 in the third sub-pixel region which are not in the third sub-pixel region and are formed by the third deposition, to obtain the Real RGB OLEDoS.

[0018] Preferably, the materials of the first dielectric material layer 200 and the second dielectric material layer 400 independently include one or more of silicon oxide material, silicon nitride material, silicon oxynitride material and Al2O3.

[0019] Preferably, the material of the conductor material layer 300 includes conductive metal oxide and / or conductive metal; the conductive metal oxide includes indium tin oxide and / or indium zinc oxide; the conductive metal includes one or more of Ag, Al, Mo, W, Cu and Au.

[0020] Preferably, the OLED functional material layer includes one or more of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron blocking layer, an electron injection layer and a hole blocking layer.

[0021] Preferably, the material of the OLED functional material layer includes one or more of phosphorescent materials, fluorescent materials and high-fluorescence OLED materials.

[0022] Preferably, the cathode layer 600 is a single-layer film or a multi-layer composite film, and the material of the cathode layer 600 includes one or more of Mg, Ag, Al, indium zinc oxide and aluminum zinc oxide.

[0023] Preferably, the thin film encapsulation layer 700 is a single-layer thin film or a multi-layer composite thin film, and the material of the thin film encapsulation layer 700 includes one or more of Al2O3, TiO2, silicon oxide material, silicon nitride material and silicon oxynitride material.

[0024] Preferably, the anode structure 110 is a single-layer film or a multi-layer composite film, and the material of the anode structure 110 includes one or more of Al, Ag, TiN and indium tin oxide.

[0025] Preferably, the silicon-based backplane 100 is a bare silicon substrate or a circuit-containing silicon substrate.

[0026] The present invention provides a method for preparing Real RGB by using anode protection The OLEDoS method comprises the following steps: depositing a first dielectric material layer precursor 200-1, a conductor material layer precursor 300-1 and a second dielectric material layer precursor 400-1 on the upper surface of a silicon-based backplane 100 and an anode structure 110 in sequence; performing bottom incision by using a photolithography and etching process to form a conductor material layer 300 and a second dielectric material layer 400; performing a first etching on the first dielectric material layer precursor 200-1 by using a photolithography and etching process to expose the anode structure 110 of a first sub-pixel region, and then first depositing an OLED functional material layer 500, a cathode layer 600 and a thin film encapsulation layer 700 in the first sub-pixel region in sequence to form a first sub-pixel region; performing a second etching by using a photolithography and etching process to remove the OLED functional material layer 500, the cathode layer 600 and the thin film encapsulation layer 700 of the first sub-pixel region other than the first sub-pixel region; performing a third etching on the first dielectric material layer precursor 200-1 by using a photolithography and etching process to expose the second sub-pixel region The anode structure 110 of the third sub-pixel region is formed, and then the second sub-pixel region OLED functional material layer 800, the cathode layer 600 and the thin film encapsulation layer 700 are sequentially deposited for the second time to form the second sub-pixel region; the fourth etching is performed by using a photolithography and etching stripping process to remove the second sub-pixel region OLED functional material layer 700, the cathode layer 600 and the thin film encapsulation layer 700 formed by the second deposition and not the second sub-pixel region) The first dielectric material layer precursor 200-1 is fifthly etched by using a photolithography and etching stripping process to expose the anode structure 110 of the third sub-pixel region to form the first dielectric material layer 200, and then the third sub-pixel region OLED functional material layer 900, the cathode layer 600 and the thin film encapsulation layer 700 are sequentially deposited for the third time to form the third sub-pixel region; the sixth etching is performed by using a photolithography and etching stripping process to remove the third sub-pixel region OLED functional material layer 900, the cathode layer 600 and the thin film encapsulation layer 700 formed by the third deposition and not the third sub-pixel region to obtain the Real RGB OLEDoS.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] The present invention first forms a first dielectric material layer 200, and then performs a first etching, a third etching and a fifth etching respectively to expose the anode structure 110 of the sub-pixel area, and etches each sub-pixel area respectively to reduce damage to the anode. It only needs to withstand one etching damage when opening the material on the anode, thereby protecting the anode and improving the quality and yield rate of Real RGB OLEDoS. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a schematic diagram of the structure of Real RGB OLEDoS;

[0030] Figure 2 This is a schematic diagram of the process of preparing Real RGB OLEDoS by anode protection of the present invention;

[0031] In the figure, 100 is a silicon-based backplane, 110 is an anode structure, 200 is a first dielectric material layer, 200-1 is a first dielectric material layer precursor, 300 is a conductor material layer, 300-1 is a conductor material layer precursor, 400 is a second dielectric material layer, 400-1 is a second dielectric material layer precursor, 500 is a first sub-pixel area OLED functional material layer, 600 is a cathode layer, 700 is a thin film encapsulation layer, 800 is a second sub-pixel area OLED functional material layer, and 900 is a third sub-pixel area OLED functional material layer. DETAILED DESCRIPTION

[0032] The present invention provides a method for preparing Real RGB OLEDoS by anode protection, wherein the Real RGB OLEDoS comprises:

[0033] Silicon-based backplane 100;

[0034] Sub-pixel areas, the number of the sub-pixel areas is 3N, wherein N≥1, the sub-pixel areas include an anode structure 110, an OLED functional material layer, a cathode layer 600 and a thin film encapsulation layer 700 which are stacked in sequence, the anode structure 110 is embedded in the upper surface of the silicon-based backplane 100, the sub-pixel areas are arranged at intervals by spacing units, the spacing units include a first dielectric material layer 200, a conductor material layer 300 and a second dielectric material layer 400 which are stacked in sequence, the first dielectric material layer 200 is arranged on the upper surface of the silicon-based backplane 100; the OLED functional material layers of the three sub-pixel areas are a first sub-pixel area OLED functional material layer 500, a second sub-pixel area OLED functional material layer 800 and a third sub-pixel area OLED functional material layer 900, the colors of the first sub-pixel area OLED functional material layer 500, the second sub-pixel area OLED functional material layer 800 and the third sub-pixel area OLED functional material layer 900 are RGB any color emitting light and are all different;

[0035] The method comprises the following steps:

[0036] A first dielectric material layer precursor 200 - 1 , a conductor material layer precursor 300 - 1 , and a second dielectric material layer precursor 400 - 1 are sequentially deposited on the upper surfaces of the silicon-based backplane 100 and the anode structure 110 ;

[0037] Performing bottom incision on the conductor material layer precursor 300 - 1 and the second dielectric material layer precursor 400 - 1 to form the conductor material layer 300 and the second dielectric material layer 400 ;

[0038] Performing a first etching on the first dielectric material layer precursor 200-1 to expose the anode structure 110 of the first sub-pixel region, and then sequentially performing a first deposition of the first sub-pixel region OLED functional material layer 500, cathode layer 600 and thin film encapsulation layer 700 to form the first sub-pixel region;

[0039] Performing a second etching on the OLED functional material layer 500, the cathode layer 600 and the thin film encapsulation layer 700 in the first sub-pixel region other than the first sub-pixel region;

[0040] Performing a third etching on the first dielectric material layer precursor 200-1 to expose the anode structure 110 of the second sub-pixel region, and then sequentially depositing the second sub-pixel region OLED functional material layer 800, cathode layer 600 and thin film encapsulation layer 700 to form the second sub-pixel region;

[0041] Performing a fourth etching to remove the second sub-pixel region OLED functional material layer 800, the cathode layer 600, and the thin film encapsulation layer 700 formed by the second deposition and not in the second sub-pixel region;

[0042] The first dielectric material layer precursor 200-1 is subjected to a fifth etching to expose the anode structure 110 of the third sub-pixel region to form the first dielectric material layer 200, and then the third sub-pixel region OLED functional material layer 900, cathode layer 600 and thin film encapsulation layer 700 are sequentially deposited for a third time to form a third sub-pixel region;

[0043] A sixth etching is performed to remove the OLED functional material layer 900 , the cathode layer 600 , and the thin film encapsulation layer 700 in the third sub-pixel region which are not in the third sub-pixel region and are formed by the third deposition, to obtain the Real RGB OLEDoS.

[0044] Figure 1 This is a schematic diagram of the structure of Real RGB OLEDoS. Figure 1 The structure of the Real RGB OLEDoS is described. In the figure, 100 is a silicon-based backplane, 110 is an anode structure, 200 is a first dielectric material layer, 300 is a conductor material layer, 400 is a second dielectric material layer, 500 is a first sub-pixel area OLED functional material layer, 600 is a cathode layer, 700 is a thin film encapsulation layer, 800 is a second sub-pixel area OLED functional material layer, and 900 is a third sub-pixel area OLED functional material layer.

[0045] The Real RGB OLEDoS of the present invention includes a silicon-based backplane 100, and the silicon-based backplane 100 is preferably a bare silicon substrate or a circuit-containing silicon substrate.

[0046] In the present invention, the circuit-containing silicon substrate is preferably a CMOS (Complementary Metal Oxide Semiconductor) circuit-containing silicon substrate.

[0047] The Real RGB OLEDoS of the present invention includes sub-pixel areas, the number of which is 3N, where N≥1, and the sub-pixel areas include an anode structure 110, an OLED functional material layer, a cathode layer 600, and a thin film encapsulation layer 700 stacked in sequence, the anode structure 110 is embedded in the upper surface of the silicon-based backplane 100, and the sub-pixel areas are arranged at intervals by spacing units, and the spacing units include a first dielectric material layer 200, a conductor material layer 300, and a second dielectric material layer 400 stacked in sequence, and the first dielectric material layer 200 is arranged on the upper surface of the silicon-based backplane 100; the OLED functional material layers of the three sub-pixel areas are a first sub-pixel area OLED functional material layer 500, a second sub-pixel area OLED functional material layer 800, and a third sub-pixel area OLED functional material layer 900, and the colors of the first sub-pixel area OLED functional material layer 500, the second sub-pixel area OLED functional material layer 800, and the third sub-pixel area OLED functional material layer 900 are any RGB colors and are different.

[0048] In the present invention, the anode structure 110 is preferably a single-layer film or a multi-layer composite film, the number of layers of the multi-layer composite film is preferably ≥3, and the material of the anode structure 110 preferably includes one or more of Ti, Al, Ag, TiN and indium tin oxide (ITO).

[0049] When the anode structure 110 is preferably a multi-layer composite film, the anode structure 110 is preferably composed of two or more materials selected from Ti, Al, Ag, TiN and indium tin oxide to form the multi-layer composite film.

[0050] In the present invention, the materials of the first dielectric material layer 200 and the second dielectric material layer 400 are independently preferably silicon oxide materials (SiO x ), silicon nitride material (SiN x ), silicon oxynitride materials (SiO x N y ) and Al2O3 or more.

[0051] In the present invention, the material of the conductor material layer 300 preferably includes conductive metal oxide and / or conductive metal; the conductive metal oxide includes indium tin oxide and / or indium zinc oxide (IZO); the conductive metal includes one or more of Ag, Al, Mo, W, Cu and Au.

[0052] In the present invention, the OLED functional material layer preferably includes one or more of a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), an electron blocking layer (EBL), an electron injection layer (EIL) and a hole blocking layer (HBL). The present invention has no particular limitation on the thickness and arrangement order of the hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron blocking layer, electron injection layer and hole blocking layer, and the schemes well known to those skilled in the art can be adopted.

[0053] In the present invention, the material of the OLED functional material layer preferably includes one or more of phosphorescent materials, fluorescent materials and high-fluorescent OLED materials. The present invention has no particular limitation on the specific types of the phosphorescent materials, fluorescent materials and high-fluorescent OLED materials, and any solution known to those skilled in the art can be used.

[0054] In the present invention, the first sub-pixel area OLED functional material layer 500 preferably emits light in any RGB color, the second sub-pixel area OLED functional material layer 800 emits light in any RGB color other than the light emitted by the first sub-pixel area OLED functional material layer 500, and the third sub-pixel area OLED functional material layer 900 emits light in any RGB color other than the light emitted by the first sub-pixel area OLED functional material layer 500 and the light emitted by the second sub-pixel area OLED functional material layer 800.

[0055] In the present invention, the cathode layer 600 is preferably a single-layer film or a multi-layer composite film, the number of layers of the multi-layer composite film is preferably ≥3, and the material of the cathode layer 600 preferably includes one or more of Mg, Ag, Al, indium zinc oxide and aluminum zinc oxide (AZO).

[0056] When the cathode layer 600 is preferably a multi-layer composite film, the cathode layer 600 is preferably composed of two or more materials selected from the group consisting of Mg, Ag, Al, indium zinc oxide, and aluminum zinc oxide.

[0057] In the present invention, the thin film encapsulation layer 700 is preferably a single-layer thin film or a multi-layer composite thin film, the number of layers of the multi-layer composite thin film is preferably ≥3, and the material of the thin film encapsulation layer 700 preferably includes one or more of Al2O3, TiO2, silicon oxide material, silicon nitride material and silicon oxynitride material.

[0058] When the thin film encapsulation layer 700 is preferably a multi-layer composite thin film, the thin film encapsulation layer 700 is preferably composed of two or more materials selected from the group consisting of Al2O3, TiO2, silicon oxide materials, silicon nitride materials and silicon oxynitride materials.

[0059] Figure 2The schematic diagram of the process of preparing Real RGB OLEDoS by the anode protection process of the present invention is shown below. Figure 2 The method of the present invention will be described.

[0060] The present invention sequentially deposits a first dielectric material layer precursor 200 - 1 , a conductor material layer precursor 300 - 1 and a second dielectric material layer precursor 400 - 1 on the upper surfaces of a silicon-based backplane 100 and an anode structure 110 .

[0061] In the present invention, the anode structure 110 is preferably integrated on the silicon-based backplane 100 .

[0062] After obtaining the first dielectric material layer precursor 200 - 1 , the conductor material layer precursor 300 - 1 and the second dielectric material layer precursor 400 - 1 , the present invention performs bottom incision on the conductor material layer precursor 300 - 1 and the second dielectric material layer precursor 400 - 1 to form the conductor material layer 300 and the second dielectric material layer 400 .

[0063] In the present invention, the material of the first dielectric material layer precursor 200 - 1 is the same as that of the first dielectric material layer 200 , the material of the conductor material layer precursor 300 - 1 is the same as that of the conductor material layer 300 , and the material of the second dielectric material layer precursor 400 - 1 is the same as that of the second dielectric material layer precursor 400 .

[0064] In the present invention, the conductor material layer precursor 300-1 undergoes bottom incision to obtain the conductor material layer 300, the second dielectric material layer precursor 400-1 undergoes bottom incision to obtain the second dielectric material layer 400, and the first dielectric material layer precursor 200-1 does not undergo bottom incision.

[0065] The present invention has no particular limitation on the specific method of the bottom incision, and a method well known to those skilled in the art may be used, such as dry etching, wet etching or a combination of the two.

[0066] After forming the conductor material layer 300 and the second dielectric material layer 400, the present invention performs a first etching on the first dielectric material layer precursor 200-1 to expose the anode structure 110 of the first sub-pixel area, and then sequentially performs a first deposition of the first sub-pixel area OLED functional material layer 500, cathode layer 600 and thin film encapsulation layer 700 to form the first sub-pixel area.

[0067] In the present invention, the first deposition includes deposition on the surfaces of the anode structure 110 , the first dielectric material layer precursor 200 - 1 and the second dielectric material layer 400 in the first sub-pixel region.

[0068] After forming the first sub-pixel region, the present invention performs a second etching to remove the first sub-pixel region OLED functional material layer 500, cathode layer 600 and thin film encapsulation layer 700 other than the first sub-pixel region, exposing the second dielectric material layer 400 and the first dielectric material layer precursor 200-1.

[0069] After the second etching is completed, the present invention performs a third etching on the first dielectric material layer precursor 200-1 to expose the anode structure 110 of the second sub-pixel area, and then sequentially deposits the second sub-pixel area OLED functional material layer 800, cathode layer 600 and thin film encapsulation layer 700 to form the second sub-pixel area.

[0070] In the present invention, the second deposition includes deposition on the surfaces of the anode structure 110, the first dielectric material layer precursor 200-1, the second dielectric material layer 400 and the thin film encapsulation layer 700 of the first sub-pixel region.

[0071] After forming the second sub-pixel area, the present invention performs a fourth etching to remove the second sub-pixel area OLED functional material layer 800, cathode layer 600 and thin film encapsulation layer 700 formed by the second deposition and not the second sub-pixel area, exposing the second dielectric material layer 400 and the first dielectric material layer precursor 200-1.

[0072] After the fourth etching is completed, the present invention performs a fifth etching on the first dielectric material layer precursor 200-1 to expose the anode structure 110 of the third sub-pixel area, forming the first dielectric material layer 200, and then sequentially deposits the third sub-pixel area OLED functional material layer 900, cathode layer 600 and thin film encapsulation layer 700 for the third time to form the third sub-pixel area.

[0073] In the present invention, the third deposition includes deposition on the surfaces of the anode structure 110 , the second dielectric material layer 400 , the thin film encapsulation layer 700 of the first sub-pixel region and the thin film encapsulation layer 700 of the second sub-pixel region in the third sub-pixel region.

[0074] After forming the third sub-pixel area, the present invention performs a sixth etching to remove the third sub-pixel area OLED functional material layer 900, cathode layer 600 and thin film encapsulation layer 700 formed by the third deposition and not the third sub-pixel area, to obtain the RealRGB OLEDoS.

[0075] In the present invention, the deposition, first deposition, second deposition and third deposition methods are preferably evaporation, physical vapor deposition (PVD), atomic layer deposition (ALD) or chemical vapor deposition (CVD). The present invention has no special restrictions on the specific parameters of the deposition, and methods familiar to those skilled in the art can be used.

[0076] The present invention has no special limitation on the methods of the first etching, the second etching, the third etching, the fourth etching, the fifth etching and the sixth etching, and may adopt a photolithography etching and resist stripping process well known to those skilled in the art. The present invention has no special limitation on the specific method of the photolithography etching and resist stripping process, and may adopt a method well known to those skilled in the art, such as dry etching, wet etching or a combination of the two. The first etching, the third etching and the fifth etching are preferably dry etching.

[0077] The technical solutions in the present invention will be described clearly and completely below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0078] Example 1

[0079] The structure of the prepared Real RGB OLEDoS is as follows Figure 1 As shown, the specific anode protection preparation method is as follows:

[0080] Step 1. SiO is deposited on the silicon-based backplane 100 with the anode structure 110. x , W and SiO x , the deposition methods are CVD, PVD and CVD in sequence, forming a first dielectric material layer precursor 200-1, a conductor material layer precursor 300-1 and a second dielectric material layer precursor 400-1 respectively;

[0081] Step 2. Undercut the conductor material layer precursor 300-1 and the second dielectric material layer precursor 400-1 by using a photolithography and etching process to make an undercut structure, thereby forming the conductor material layer 300 and the second dielectric material layer 400. The etching process is a combination of dry etching and wet etching.

[0082] Step 3. Use a photolithography and etching process to etch out the anode metal of the first sub-pixel area (R), and the etching process is dry etching;

[0083] Step 4. Sequentially deposit the OLED layer (OLED functional material layer 500 in the first sub-pixel region), cathode layer 600 and thin film encapsulation layer 700 in the R pixel region. The cathode layer 600 is a Mg / Ag alloy, and the thin film encapsulation layer 700 is a SiN x , the deposition methods are evaporation, evaporation and CVD;

[0084] Step 5. Remove the OLED functional material layer 500, cathode layer 600 (Mg / Ag alloy) and thin film encapsulation layer 700 (SiN) in the first sub-pixel region not in the R sub-pixel region formed in Step 4 by photolithography and etching. x );

[0085] Step 6. Use a photolithography and etching process to etch out the anode metal of the second sub-pixel area (G), and the etching process is dry etching;

[0086] Step 7. Sequentially deposit the OLED layer of the G pixel area (the second sub-pixel area OLED functional material layer 800), the cathode layer 600 and the thin film encapsulation layer 700. The cathode layer 600 is a Mg / Ag alloy, and the thin film encapsulation layer 700 is a SiN x , the deposition methods are evaporation, evaporation and CVD;

[0087] Step 8. Remove the OLED functional material layer 800, cathode layer 600 (Mg / Ag alloy) and thin film encapsulation layer 700 (SiN2O3) in the second sub-pixel region not in the G sub-pixel region formed in Step 7 by photolithography and etching. x );

[0088] Step 9. Use a photolithography and etching process to etch out the anode metal of the third sub-pixel area (B), and the etching process is dry etching;

[0089] Step 10. Sequentially deposit the OLED layer of the B pixel area (the third sub-pixel area OLED functional material layer 900), the cathode layer 600 and the thin film encapsulation layer 700. The cathode layer 600 is a Mg / Ag alloy, and the thin film encapsulation layer 700 is a SiN x , the deposition methods are evaporation, evaporation and CVD;

[0090] Step 11. Remove the OLED functional material layer 900, cathode layer 600 (Mg / Ag alloy and thin film encapsulation layer 700 (SiN) in the third sub-pixel region other than the B sub-pixel region formed in Step 10 by photolithography and etching. x ) to get Real RGBOLEDoS.

[0091] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A method for preparing Real RGB OLEDoS by anode protection, characterized in that: The Real RGB OLEDoS includes: Silicon-based backplane (100); Sub-pixel regions, the number of the sub-pixel regions is 3N, wherein N≥1, the sub-pixel regions comprising an anode structure (110), an OLED functional material layer, a cathode layer (600) and a thin film encapsulation layer (700) which are sequentially stacked, the anode structure (110) being embedded in the upper surface of the silicon-based backplane (100) at intervals, the sub-pixel regions being spaced apart by a spacing unit, the spacing unit comprising a first dielectric material layer (200), a conductor material layer (300) and a second dielectric material layer (400) which are sequentially stacked, the first dielectric material layer (200) is arranged on the upper surface of the silicon-based backplane (100); the three sub-pixel area OLED functional material layers are a first sub-pixel area OLED functional material layer (500), a second sub-pixel area OLED functional material layer (800) and a third sub-pixel area OLED functional material layer (900); the colors of the first sub-pixel area OLED functional material layer (500), the second sub-pixel area OLED functional material layer (800) and the third sub-pixel area OLED functional material layer (900) are any RGB colors and are all different; The method comprises the following steps: Depositing a first dielectric material layer precursor (200-1), a conductor material layer precursor (300-1) and a second dielectric material layer precursor (400-1) in sequence on the upper surfaces of the silicon-based backplane (100) and the anode structure (110); Performing bottom incision on the conductor material layer precursor (300-1) and the second dielectric material layer precursor (400-1) to form a conductor material layer (300) and a second dielectric material layer (400); Performing a first etching on the first dielectric material layer precursor (200-1) to expose the anode structure (110) of the first sub-pixel region, and then sequentially performing a first deposition on the first sub-pixel region OLED functional material layer (500), cathode layer (600) and thin film encapsulation layer (700) to form the first sub-pixel region; Performing a second etching on the OLED functional material layer (500), the cathode layer (600) and the thin film encapsulation layer (700) in the first sub-pixel region other than the first sub-pixel region; Performing a third etching on the first dielectric material layer precursor (200-1) to expose the anode structure (110) of the second sub-pixel region, and then sequentially depositing the second sub-pixel region OLED functional material layer (800), cathode layer (600) and thin film encapsulation layer (700) to form the second sub-pixel region; Performing a fourth etching to remove the second sub-pixel region OLED functional material layer (800), the cathode layer (600) and the thin film encapsulation layer (700) formed by the second deposition and not in the second sub-pixel region; Performing a fifth etching on the first dielectric material layer precursor (200-1) to expose the anode structure (110) of the third sub-pixel region to form the first dielectric material layer (200), and then sequentially depositing a third sub-pixel region OLED functional material layer (900), a cathode layer (600) and a thin film encapsulation layer (700) to form a third sub-pixel region; A sixth etching is performed to remove the OLED functional material layer (900), the cathode layer (600) and the thin film encapsulation layer (700) in the third sub-pixel region which are not in the third sub-pixel region and are formed by the third deposition, thereby obtaining the Real RGB OLEDoS.

2. The method according to claim 1, characterized in that The materials of the first dielectric material layer (200) and the second dielectric material layer (400) independently include one or more of silicon oxide material, silicon nitride material, silicon oxynitride material and Al2O3.

3. The method according to claim 1, characterized in that The material of the conductor material layer (300) includes conductive metal oxide and / or conductive metal; the conductive metal oxide includes indium tin oxide and / or indium zinc oxide; the conductive metal includes one or more of Ag, Al, Mo, W, Cu and Au.

4. The method according to claim 1, characterized in that: The OLED functional material layer includes one or more of a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer and an electron injection layer.

5. The method according to claim 1, characterized in that The material of the OLED functional material layer includes one or more of phosphorescent materials, fluorescent materials and high-fluorescence OLED materials.

6. The method according to claim 1, characterized in that The cathode layer (600) is a single-layer thin film or a multi-layer composite thin film, and the material of the cathode layer (600) includes one or more of Mg, Ag, Al, indium zinc oxide and zinc aluminum oxide.

7. The method according to claim 1, characterized in that The thin film encapsulation layer (700) is a single-layer thin film or a multi-layer composite thin film, and the material of the thin film encapsulation layer (700) includes one or more of Al2O3, TiO2, silicon oxide material, silicon nitride material and silicon oxynitride material.

8. The method according to claim 1, characterized in that The anode structure (110) is a single-layer thin film or a multi-layer composite thin film, and the material of the anode structure (110) includes one or more of Al, Ag, TiN and indium tin oxide.

9. The method according to claim 1, characterized in that: The silicon-based backplane (100) is a bare silicon substrate or a circuit-containing silicon substrate.

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