Perovskite crystallization device

Abstract

The invention discloses a perovskite crystallization device, and relates to the technical field of perovskite cell preparation, the perovskite crystallization device comprises a crystallization furnace and an air exhaust system, the crystallization furnace is internally provided with a crystallization cavity, the air exhaust system comprises a plurality of air exhaust nozzles, the plurality of air exhaust nozzles are uniformly arranged on the upper part of the crystallization cavity, and the air exhaust nozzles are arranged in the crystallization cavity. And the central area and the edge area of the crystallization cavity are uniformly exhausted. According to the perovskite crystallization device, air is uniformly exhausted from the upper part of the coating, so that the flow velocity difference between the edge area and the central area of the surface of the coating is eliminated, and the problem of non-uniform crystallization caused by non-uniform flow velocity is avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite cell preparation, and in particular to a perovskite crystallization device. Background Art

[0002] Perovskite solar cells have higher photoelectric conversion efficiency than ordinary solar cells, so they have strong advantages. In the manufacturing process of perovskite solar cells, the crystallization of perovskite film is a key process. At present, the industry generally uses vacuum exhaust method to achieve the drying and crystallization of perovskite film, and the exhaust is usually carried out under the process chamber.

[0003] The specific operating steps of the vacuum pumping method are: first apply the perovskite precursor solution on the surface of the sample to form a coating, and then place the coated sample in a specific process chamber, ensuring that the coating surface is facing up, and then start the vacuum pump below to evacuate the chamber to reach a negative pressure, thereby promoting the volatilization of the perovskite coating solvent and forming crystals. In this process, the airflow above the coating will first go around the edge of the sample and then be discharged from the exhaust nozzle below. The flow rate in the edge area will be faster than the flow rate in the center area, which will cause the solvent evaporation rate at the edge to be greater than that in the center area, causing the problem of uneven crystallization between the edge area and the center area. In the production of small-area batteries, due to the small surface area of ​​the coating, the flow rate difference between the edge area and the center area is not large, so the problem of uneven crystallization will not be too obvious. However, when manufacturing large-area batteries, the increase in coating area will amplify the difference in flow rate between the edge and center areas, which will lead to the prominent phenomenon of uneven crystallization. Summary of the invention

[0004] The main purpose of the present invention is to provide a perovskite crystallization device, aiming to solve the problem of uneven crystallization caused by uneven flow field distribution in the perovskite crystallization device.

[0005] To achieve the above-mentioned purpose, the perovskite crystallization device proposed in the present invention includes a crystallization furnace and an exhaust system. A crystallization chamber is arranged in the crystallization furnace. The exhaust system includes a plurality of exhaust nozzles. The plurality of exhaust nozzles are evenly arranged in the upper part of the crystallization chamber to evenly exhaust the central area and the edge area of ​​the crystallization chamber.

[0006] In one embodiment, the perovskite crystallization device also includes a gas supply system, which includes a plurality of gas supply nozzles, and the plurality of gas supply nozzles are evenly arranged at the upper portion of the crystallization chamber for supplying gas to the crystallization chamber, and at least two gas supply nozzles are evenly arranged around each of the vacuum nozzles.

[0007] In one embodiment, the top wall of the crystallization furnace is provided with an opening, and the perovskite crystallization device further comprises a bellows, which is detachably arranged on the top of the crystallization furnace and blocks the opening. A plurality of air suction ports and a plurality of air supply ports are provided on the bottom plate of the bellows, the number of the air suction ports is consistent with the number of the air suction nozzles, the number of the air supply ports is consistent with the number of the air supply nozzles, at least two air supply ports are evenly arranged around each of the air suction ports, the air suction nozzles and the air supply nozzles are both arranged in the bellows, and one of the air suction nozzles is connected to one of the air suction ports, and one of the air supply nozzles is connected to one of the air supply ports.

[0008] In one embodiment, the air extraction system further includes an air extraction pump and an air extraction pipe, wherein the air extraction pump is arranged outside the bellows, and the air extraction pipe is arranged between the bellows and the air extraction pump for connecting the air extraction nozzle and the air extraction pump.

[0009] In one embodiment, the exhaust pipe includes a first branch pipe, a first shunt pipe and a first confluence pipe, the number of the first branch pipes is consistent with the number of the exhaust nozzles, the first branch pipes are arranged in the bellows, and one first branch pipe is connected to one exhaust nozzle, and the first branch pipes are divided into several groups; the number of the first shunt pipes is the same as the number of groups of the first branch pipes, the first shunt pipes are at least partially arranged in the bellows, and a group of first branch pipes intersects with one first shunt pipe; the first confluence pipe is arranged outside the bellows, the end of the first shunt pipe away from the first branch pipe intersects with the first confluence pipe, and the end of the first confluence pipe away from the first shunt pipe is connected to the exhaust pump. Wherein, a first regulating valve is arranged on the first confluence pipe, and the first regulating valve is used to adjust the size of the flow cross section of the first confluence pipe.

[0010] In one embodiment, the air supply system also includes a plurality of air supply tanks and air supply pipes, wherein the plurality of air supply tanks are arranged outside the bellows, and each air supply tank is used to store a different type of gas, and the air supply pipe is arranged between the bellows and the air supply tank, and is used to connect the air supply nozzle and the air supply tank.

[0011] In one embodiment, the air supply pipe includes a first air supply pipe, a second air supply pipe and a third air supply pipe, the number of the first air supply pipes is consistent with the number of the air supply nozzles, the first air supply pipes are at least partially arranged in the bellows, and one of the first air supply pipes is connected to one of the air supply nozzles; all of the first air supply pipes are connected to the second air supply pipes. The number of the third air supply pipes is consistent with the number of the air supply tanks, the third air supply pipes are arranged outside the bellows, one end of the third air supply pipe is connected to the second air supply pipe, and the other end of the third air supply pipe is connected to one of the air supply tanks. Each of the third air supply pipes is provided with a second regulating valve, and the second regulating valve is used to adjust the size of the flow cross-section of the corresponding third air supply pipe.

[0012] In one embodiment, the crystallization furnace has a feed end and a discharge end that are arranged opposite to each other, and a first conveying structure is arranged in the crystallization furnace, and the first conveying structure is used to drive the sample to move between the feed end and the discharge end.

[0013] In one embodiment, a first heating platform is disposed in the crystallization furnace. The first heating platform is disposed on a transmission belt of the first conveying structure and is used to carry the sample conveyed by the first conveying structure and heat the sample.

[0014] In one embodiment, the perovskite crystallization device further includes a feed furnace and a discharge furnace, wherein the feed furnace is arranged at the feed end of the crystallization furnace, and the discharge port of the feed furnace is docked with the feed port of the crystallization furnace, and the discharge furnace is arranged at the discharge end of the crystallization furnace, and the feed port of the discharge furnace is docked with the discharge port of the crystallization furnace. A second conveying structure is arranged in the feed furnace, and a third conveying structure is arranged in the discharge furnace, and the conveying surfaces of the first conveying structure, the second conveying structure and the third conveying structure are arranged in the same plane. Among them, at least two crystallization furnaces are arranged, and more than two crystallization furnaces are arranged side by side between the feed furnace and the discharge furnace; or, the length of the crystallization furnace is greater than the length of the feed furnace and the discharge furnace.

[0015] The exhaust system in the perovskite crystallization device includes a plurality of exhaust nozzles, and the plurality of exhaust nozzle arrays are arranged in the upper part of the crystallization chamber, and the exhaust nozzles are evenly arranged from the central area to the edge area, so that the central area and the edge area of ​​the crystallization chamber can be evenly exhausted, ensuring that the central area and the edge area of ​​the coating can form a uniform airflow, ensuring that the solvent evaporation rate of each area of ​​the coating remains consistent, and ensuring the uniformity of crystallization. Moreover, the exhaust nozzle in the technical solution exhausts air from above the coating, and the airflow direction is upward. The solvent carried in the airflow is discharged upward with the airflow, and will not flow through the adjacent area, and will not interfere with the crystallization of the adjacent area, making the crystallization more uniform. Obviously, the perovskite crystallization device eliminates the flow velocity difference between the edge area and the central area of ​​the coating surface, avoids the problem of uneven crystallization caused by uneven flow velocity, and can not only ensure the uniformity of crystallization of small-area perovskite solar cells, but also ensure the uniformity of crystallization of large-area perovskite solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0017] Figure 1 A schematic structural diagram of an embodiment of a perovskite crystallization device provided by the present invention;

[0018] Figure 2 A schematic diagram of the internal structure of a bellows in an embodiment of a perovskite crystallization device provided by the present invention;

[0019] Figure 3 for Figure 2 A magnified view of the structure at center A;

[0020] Figure 4 This is a diagram showing the arrangement of the air suction nozzle and the air delivery nozzle in one embodiment of the perovskite crystallization device provided by the present invention;

[0021] Figure 5 A simplified structural diagram of an exhaust system in an embodiment of a perovskite crystallization device provided by the present invention;

[0022] Figure 6 A simplified structural diagram of a gas supply system in an embodiment of a perovskite crystallization device provided by the present invention;

[0023] Figure 7 This is a simplified structural diagram of an embodiment of a perovskite crystallization device provided by the present invention.

[0024] Description of Figure Numbers:

[0025] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0028] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0029] The present invention provides a perovskite crystallization device 100 .

[0030] See also Figures 1 to 4 The embodiment of the perovskite crystallization device 100 includes a crystallization furnace 1 and an exhaust system. A crystallization chamber is provided in the crystallization furnace 1. The exhaust system includes a plurality of exhaust nozzles 51. The plurality of exhaust nozzles 51 are evenly arranged on the upper part of the crystallization chamber to evenly exhaust the central area and the edge area of ​​the crystallization chamber.

[0031] In addition to the suction nozzle 51, the suction system also includes a suction pump 52 and a suction pipe 53. Figure 4As shown, the vacuum pump 52 is arranged outside the crystallization furnace 1, and the vacuum pipe 53 is arranged between the crystallization furnace 1 and the vacuum pump 52, for connecting the vacuum nozzle 51 and the vacuum pump 52. During the crystallization operation, the sample 200 coated with the perovskite precursor solution is placed in the crystallization furnace 1, and it is ensured that the coating surface is placed upward, and then the vacuum pump 52 is started to evacuate air, so that a negative pressure is formed in the crystallization chamber, and the solvent in the perovskite coating evaporates rapidly under the action of negative pressure and airflow, and the evaporation of the solvent will cause the concentration of the perovskite precursor solution in the solution to increase, thereby reaching a supersaturated state to form crystals.

[0032] The conventional perovskite crystallization device 100 usually exhausts air at the bottom of the crystallization furnace 1. When exhausting air, the airflow above the coating will first go around the edge of the sample 200 and then be discharged from the exhaust nozzle 51 below. This will cause the flow rate in the edge area of ​​the sample 200 to be faster and the flow rate in the center area to be slower, which will in turn cause the solvent evaporation rate at the edge to be greater than that in the center area, thereby causing the problem of uneven crystallization.

[0033] Unlike the traditional perovskite crystallization device, the perovskite crystallization device 100 of the present invention performs exhaust above the crystallization chamber. Specifically, the exhaust system in the perovskite crystallization device 100 includes a plurality of exhaust nozzles 51, and the plurality of exhaust nozzles 51 are arranged in an array at the upper part of the crystallization chamber, and the exhaust nozzles 51 are evenly arranged from the central area to the edge area, so that the central area and the edge area of ​​the crystallization chamber can be evenly exhausted, ensuring that the central area and the edge area of ​​the coating can form a uniform airflow, ensuring that the solvent evaporation rate of each area of ​​the coating remains consistent, and ensuring the uniformity of crystallization. Moreover, the exhaust nozzle 51 in the present technical solution performs exhaust from above the coating, and the airflow direction is upward. The solvent carried in the airflow is quickly discharged upward with the airflow, and will not flow through the adjacent areas (the airflow will not go around the edge like the exhaust below), and will not interfere with the crystallization of the adjacent areas, making the crystallization more uniform. Obviously, the perovskite crystallization device 100 eliminates the flow velocity difference between the edge area and the central area of ​​the coating surface, avoids the problem of uneven crystallization caused by uneven flow velocity, and can not only ensure the uniformity of crystallization of small-area perovskite solar cells, but also ensure the uniformity of crystallization of large-area perovskite solar cells.

[0034] An embodiment of the perovskite crystallization device 100 further includes a gas supply system, which includes a plurality of gas supply nozzles 61 , which are evenly arranged at the upper portion of the crystallization chamber for supplying gas to the crystallization chamber, and at least two gas supply nozzles 61 are evenly arranged around each vacuum nozzle 51 .

[0035] Reference Figure 6The gas supply system further includes a plurality of gas supply tanks 62 and gas supply pipes 63. The plurality of gas supply tanks 62 are arranged outside the crystallization furnace 1. The gas supply pipes 63 are arranged between the crystallization furnace 1 and the gas supply tanks 62, and are used to connect the gas supply nozzles 61 and the gas supply tanks 62. Each gas supply tank 62 is used to store different types of gases, such as nitrogen, argon, chlorobenzene, toluene and other single gases or mixed gases. These gases are transported to the crystallization chamber through the gas supply nozzles 61, which can provide a suitable chemical atmosphere to promote the uniform nucleation and growth of perovskite crystals.

[0036] In the present technical solution, the air supply nozzles 61 are evenly arranged at the upper part of the crystallization chamber, and the air supply nozzles 61 are staggered with the air extraction nozzles 51, that is, at least two air supply nozzles 61 are evenly arranged around each air extraction nozzle 51. Figure 4 In the illustrated embodiment, the air suction nozzles 51 and the air supply nozzles 61 are arranged in a row and column array, and except for the edge area, each air suction nozzle 51 is provided with an air supply nozzle 61 in four directions, front, back, left, and right, at intervals, that is, one air suction nozzle 51 is surrounded by four air supply nozzles 61. Of course, in other embodiments, the arrangement of the air suction nozzles 51 and the air supply nozzles 61 can be flexibly changed, such as one air suction nozzle 51 can be surrounded by three air supply nozzles 61, or one air suction nozzle 51 is arranged between two air supply nozzles 61, which is not limited here.

[0037] During the crystallization operation, the gas supply system and the gas extraction system can be started at the same time. The gas supply nozzle 61 applies auxiliary gas toward the perovskite coating, and the gas extraction nozzle 51 quickly extracts the gas around the air inlet, thereby forming an airflow of air inlet and air outlet above the coating. The airflow can increase the volatilization rate of the solvent and further accelerate the crystallization rate. At the same time, the gas supply nozzle 61 and the gas extraction nozzle 51 are evenly staggered, which can form a stable flow field on the entire coating surface, ensuring that the solvent volatilization rate in each area of ​​the coating is equivalent, and ensuring the uniformity of crystallization.

[0038] In one embodiment of the present invention, the top wall of the crystallization furnace 1 is provided with an opening, and the perovskite crystallization device 100 further includes a bellows 4, which is detachably arranged on the top of the crystallization furnace 1 and blocks the opening. A plurality of air suction ports and a plurality of air supply ports are provided on the bottom plate of the bellows 4, the number of the air suction ports is consistent with the number of the air suction nozzles 51, the number of the air supply ports is consistent with the number of the air supply nozzles 61, at least two air supply ports are evenly arranged around each air suction port, the air suction nozzles 51 and the air supply nozzles 61 are both arranged in the bellows 4, and one air suction nozzle 51 is connected to one air suction port, and one air supply nozzle 61 is connected to one air supply port.

[0039] In this embodiment, the air suction nozzle 51 and the air supply nozzle 61 are both arranged in the bellows 4, and the position of the air suction port is the installation position of the air suction nozzle 51, and the installation position of the air supply port is the installation position of the air supply nozzle 61. A bracket may be arranged in the bellows 4 for fixing the air suction nozzle 51 and the air supply nozzle 61, or the air suction nozzle 51 and the air supply nozzle 61 are directly bonded and fixed to the bottom wall of the bellows 4. In this embodiment, all the air suction nozzles 51 and all the air supply nozzles 61 are arranged in the bellows 4, and all the air suction nozzles 51 and all the air supply nozzles 61 can be assembled into a whole, and then the bellows 4 is installed on the top of the crystallization furnace 1 to block the opening on the top of the bellows 4, and the opening on the top of the bellows 4 covers all the air suction ports and the air supply ports, thereby ensuring that all the air suction nozzles 51 and the air supply nozzles 61 can be connected to the crystallization chamber. In this embodiment, the exhaust nozzle 51 and the air supply nozzle 61 are all arranged in the bellows 4, and the bellows 4 is detachably arranged on the top of the crystallization furnace 1. As long as the bellows 4 is removed, all the exhaust nozzles 51 and the air supply nozzles 61 can be removed at the same time, which is convenient for inspection and cleaning of the inside of the crystallization furnace 1.

[0040] At this time, the air pump 52 of the air extraction system is arranged outside the bellows 4, and the air extraction pipe 53 is arranged between the bellows 4 and the air extraction pump 52, for connecting the air extraction nozzle 51 and the air extraction pump 52. Specifically, the air extraction pipe 53 includes a first branch pipe 531, a first shunt pipe 532 and a first converging pipe 533. Figure 5 The number of first branch pipes 531 is consistent with the number of exhaust nozzles 51, the first branch pipes 531 are arranged in the bellows 4, and a first branch pipe 531 is connected to an exhaust nozzle 51, and the first branch pipes 531 are divided into several groups; the number of first diversion pipes 532 is the same as the number of groups of first branch pipes 531, the first diversion pipes 532 are at least partially arranged in the bellows 4, and a group of first branch pipes 531 converge into a first diversion pipe 532; the first converging pipe 533 is arranged outside the bellows 4, and the end of the first diversion pipe 532 facing away from the first branch pipe 531 converges into the first converging pipe 533, and the end of the first converging pipe 533 facing away from the first diversion pipe 532 is connected to the exhaust pump 52.

[0041] For example, 30 suction nozzles 51 are evenly arranged in the bellows 4, and the 30 suction nozzles 51 are divided into 5 groups, each group of suction nozzles 51 has 6 suction nozzles. At this time, 30 first branch pipes 531 are provided, 5 first shunt pipes 532 are provided, and 1 first confluence pipe 533 is provided. Each first branch pipe 531 is connected with a suction nozzle 51, 1 first shunt pipe 532 is connected with 6 first branch pipes 531, and 5 are connected with 1 first confluence pipe 533, and the first confluence pipe 533 is connected with the suction pump 52. That is, the suction pipe 53 is designed as a tree-like structure with branches layer by layer, so that the gas in the crystallization cavity can be efficiently collected from multiple suction nozzles 51 and transmitted to the suction pump 52 through fewer pipes, ensuring the uniformity of gas flow.

[0042] The first regulating valve 54 is provided on the first confluence pipe 533, and the first regulating valve 54 is used to adjust the size of the flow cross section of the first confluence pipe 533, so as to allow the operator to adjust the rate at which the vacuum pump 52 extracts air from the crystallization chamber according to the specific needs in the crystallization process. When the flow cross section of the first confluence pipe 533 is large, the vacuum pump 52 has a faster vacuum rate, and when the flow cross section of the first confluence pipe 533 is small, the vacuum pump 52 has a lower vacuum rate.

[0043] At this time, the air supply tank 62 and the air supply pipe 63 of the air supply system are also arranged outside the bellows 4, and the air supply pipe 63 is arranged between the bellows 4 and the air supply tank 62, and is used to connect the air supply nozzle 61 and the air supply tank 62. Specifically, the air supply pipe 63 includes a first air supply pipe 631, a second air supply pipe 632 and a third air supply pipe 633, Figure 6 , the number of the first gas pipes 631 is consistent with the number of the gas supply nozzles 61, the first gas pipes 631 are at least partially arranged in the bellows 4, and one first gas pipe 631 is connected to one gas supply nozzle 61; all first gas pipes 631 are connected to the second gas pipe 632. The number of the third gas pipes 633 is consistent with the number of the gas supply tanks 62, the third gas pipes 633 are arranged outside the bellows 4, and one end of the third gas pipe 633 is connected to the second gas pipe 632, and the other end of the third gas pipe 633 is connected to a gas supply tank 62. Thus, the gas in the gas supply tank 62 enters the second gas pipe 632 after passing through the third gas pipe 633, and then is divided into each first gas pipe 631 to be transported to the crystallization chamber. That is, the gas supply pipe 63 also adopts a tree structure to ensure that the gas can be efficiently and evenly transported to each gas supply nozzle 61 in the crystallization chamber.

[0044] Among them, each third gas pipe 633 is provided with a second regulating valve 64, and the second regulating valve 64 is used to adjust the size of the flow cross-section of the corresponding third gas pipe 633, thereby allowing the operator to control the gas flow according to the specific needs of the crystallization process, optimize the chemical atmosphere in the crystallization process, and improve the quality of the perovskite crystal.

[0045] The crystallization furnace 1 in the perovskite crystallization device 100 has a feed end and a discharge end arranged opposite to each other, and a first conveying structure 11 is arranged in the crystallization furnace 1. Figure 3 As shown, the first conveying structure 11 is used to drive the sample 200 to move between the feeding end and the discharging end, thereby ensuring that each area of ​​the sample 200 can evenly pass through the air suction port and the air delivery port to achieve a uniform crystallization process.

[0046] Furthermore, a first heating platform 12 is provided in the crystallization furnace 1 . The first heating platform 12 is provided on the transmission belt of the first conveying structure 11 , and is used for carrying the sample 200 conveyed by the first conveying structure 11 and heating the sample 200 .

[0047] Among them, a sample 200 groove can be provided on the heating platform to realize the positioning of the sample 200, and a heating wire or a heat source channel can be provided in the heating platform to heat the heating platform, and then heat the sample 200, so as to promote the rapid volatilization of the solvent in the precursor solution and promote the formation of crystals.

[0048] Reference Figure 1 and Figure 7 The perovskite crystallization device 100 also includes a feeding furnace 2 and a discharging furnace 3. A feeding port is provided at the feeding end, and a discharging port is provided at the discharging end. The feeding furnace 2 is arranged at the feeding end of the crystallization furnace 1, and the discharging port of the feeding furnace 2 is docked with the feeding port of the crystallization furnace 1. The discharging furnace 3 is arranged at the discharging end of the crystallization furnace 1, and the feeding port of the discharging furnace 3 is docked with the discharging port of the crystallization furnace 1.

[0049] Among them, a second conveying structure 23 is provided in the feeding furnace 2, a third conveying structure 33 is provided in the discharging furnace 3, and the conveying surfaces of the first conveying structure 11, the second conveying structure 23 and the third conveying structure 33 are arranged in the same plane. The perovskite crystallization device 100 also includes a controller, which is transmission-connected to the first conveying structure 11, the second conveying structure 23 and the third conveying structure 33 to control the reciprocating rotation of the first conveying structure 11, the second conveying structure 23 and the third conveying structure 33.

[0050] A second heating platform (not shown) is also provided in the feeding furnace 2 . The second heating platform is provided on the conveyor belt of the second conveying structure 23 , and is used for carrying the sample 200 and preheating the sample 200 .

[0051] A feeding door 21 is provided at one end of the feeding furnace 2 which is away from the crystallization furnace 1, and a discharging door 31 is provided at one end of the discharging furnace 3 which is away from the crystallization furnace 1. A first material stop valve 22 is provided at the connection between the feeding furnace 2 and the crystallization furnace 1, and a second material stop valve 32 is provided at the connection between the crystallization furnace 1 and the discharging furnace 3. The first material stop valve 22 is used to prevent the material in the feeding furnace 2 from entering the crystallization chamber in advance, and the second material stop valve 32 is used to prevent the material in the crystallization chamber from entering the discharging furnace 3 in advance. A vacuum pump 9 is provided on both the feeding furnace 2 and the discharging furnace 3 for vacuuming.

[0052] In the initial state, the first stop valve 22, the second stop valve 32 and the discharge door 31 are all in a closed state, and the feed chamber, the crystallization chamber and the discharge chamber are isolated from each other. Subsequently, the feed door 21 is opened, the sample 200 (glass substrate) is placed on the second heating stage of the feed furnace 2, the feed door 21 is closed, and the vacuum pump 9 on the feed furnace 2 is turned on to evacuate. In this process, the second heating stage is started to preheat the sample 200, so that the sample 200 has reached an appropriate temperature before entering the crystallization furnace 1, which helps to improve the crystallization efficiency and quality. At the same time, the exhaust system and the air supply system are turned on to form a uniform and stable flow field in the crystallization chamber. After the preparation work is done, the first stop valve 22 is opened, and the substrate enters the crystallization chamber under the action of the second conveying structure 23 and the first conveying structure 11, and the drying and crystallization process begins. During the drying and crystallization process, the vacuum pump 9 on the discharge furnace 3 is turned on to evacuate. After the crystallization is completed, the second stop valve 32 is opened, and the crystallized product enters the discharge chamber under the action of the first conveying structure 11 and the third transmission structure. After the product is left to cool, the discharging door 31 is opened to take out the product, and the crystallization process is finished.

[0053] In some embodiments of the perovskite crystallization device 100, at least two crystallization furnaces 1 are provided, and the two or more crystallization furnaces 1 are arranged side by side between the feeding furnace 2 and the discharging furnace 3. Alternatively, the length of a single crystallization furnace 1 is greater than the length of the feeding furnace 2 and the discharging furnace 3. In this way, the length of the crystallization furnace 1 can be extended, so that the sample 200 placed in the crystallization furnace 1 at a time is not limited to one piece, thereby improving production efficiency.

[0054] During the crystallization process, the sample 200 may pass through the feed chamber, one or more crystallization chambers in sequence, and then be discharged from the discharge chamber; or, after the sample 200 enters the crystallization chamber through the feed chamber, it moves back and forth in the crystallization chamber, and finally is discharged from the discharge chamber. This method can shorten the length of the crystallization furnace 1; or, after the sample 200 enters the crystallization chamber through the feed chamber, it moves back and forth in the crystallization chamber, and finally is discharged from the feed chamber in the opposite direction. At this time, the discharge chamber can be cancelled to shorten the total length of the equipment.

[0055] The above description is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A perovskite crystallization device, characterized in that: include: A crystallization furnace, wherein a crystallization chamber is provided in the crystallization furnace; The exhaust system comprises a plurality of exhaust nozzles, and the plurality of exhaust nozzles are evenly arranged on the upper part of the crystallization chamber to evenly exhaust the central area and the edge area of ​​the crystallization chamber.

2. The perovskite crystallization device according to claim 1, characterized in that: The perovskite crystallization device also includes a gas supply system, which includes a plurality of gas supply nozzles, which are evenly arranged on the upper part of the crystallization chamber and are used to supply gas to the crystallization chamber, and at least two gas supply nozzles are evenly arranged around each of the exhaust nozzles.

3. The perovskite crystallization device according to claim 2, characterized in that: The top wall of the crystallization furnace is provided with an opening, and the perovskite crystallization device further comprises a bellows, which is detachably arranged on the top of the crystallization furnace and blocks the opening; A plurality of air suction ports and a plurality of air supply ports are provided on the bottom plate of the bellows, the number of the air suction ports is consistent with the number of the air suction nozzles, the number of the air supply ports is consistent with the number of the air supply nozzles, at least two air supply ports are evenly arranged around each of the air suction ports, the air suction nozzles and the air supply nozzles are both arranged in the bellows, and one of the air suction nozzles is connected to one of the air suction ports, and one of the air supply nozzles is connected to one of the air supply ports.

4. The perovskite crystallization device according to claim 3, characterized in that: The air extraction system also includes: an air suction pump, the air suction pump being arranged outside the bellows; and An air extraction pipe is arranged between the bellows and the air extraction pump, and is used to connect the air extraction nozzle and the air extraction pump.

5. The perovskite crystallization device according to claim 4, characterized in that: The exhaust pipe comprises: first branch pipes, the number of the first branch pipes is consistent with the number of the air extraction nozzles, the first branch pipes are arranged in the wind box, and one first branch pipe is connected to one air extraction nozzle, and the first branch pipes are divided into a plurality of groups; A first shunt pipe, the number of the first shunt pipes is the same as the number of the first branch pipes, the first shunt pipes are at least partially disposed in the wind box, and a group of first branch pipes intersects with one first shunt pipe; a first confluence pipe, wherein the first confluence pipe is arranged outside the wind box, an end of the first shunt pipe facing away from the first branch pipe converges with the first confluence pipe, and an end of the first confluence pipe facing away from the first shunt pipe is connected to the air pump; Wherein, a first regulating valve is arranged on the first confluence pipe, and the first regulating valve is used to adjust the size of the flow cross section of the first confluence pipe.

6. The perovskite crystallization device according to claim 3, characterized in that: The air supply system also includes: A plurality of gas supply tanks, wherein the plurality of gas supply tanks are arranged outside the bellows, and each gas supply tank is used to store a different type of gas; and An air supply pipe is arranged between the bellows and the air supply tank, and is used for connecting the air supply nozzle and the air supply tank.

7. The perovskite crystallization device according to claim 6, characterized in that: The air supply pipe comprises: a first air delivery pipe, wherein the number of the first air delivery pipes is consistent with the number of the air delivery nozzles, the first air delivery pipes are at least partially disposed in the wind box, and one of the first air delivery pipes is connected to one of the air delivery nozzles; a second gas pipeline, wherein all the first gas pipelines are connected to the second gas pipeline; A third gas pipeline, the number of which is consistent with the number of the gas delivery tanks, the third gas pipeline is arranged outside the bellows, one end of the third gas pipeline is connected to the second gas pipeline, and the other end of the third gas pipeline is connected to one of the gas delivery tanks; Wherein, each of the third gas pipelines is provided with a second regulating valve, and the second regulating valve is used to adjust the size of the flow cross section of the corresponding third gas pipeline.

8. The perovskite crystallization device according to any one of claims 1 to 7, characterized in that: The crystallization furnace has a feed end and a discharge end that are arranged opposite to each other. A first conveying structure is arranged in the crystallization furnace. The first conveying structure is used to drive the sample to move between the feed end and the discharge end.

9. The perovskite crystallization device according to claim 8, characterized in that: A first heating platform is arranged in the crystallization furnace. The first heating platform is arranged on the transmission belt of the first conveying structure and is used for carrying the sample conveyed by the first conveying structure and heating the sample.

10. The perovskite crystallization device according to claim 8, characterized in that: The perovskite crystallization device further includes a feeding furnace and a discharging furnace, wherein the feeding furnace is arranged at the feeding end of the crystallization furnace, and the discharging port of the feeding furnace is docked with the feeding port of the crystallization furnace, and the discharging furnace is arranged at the discharging end of the crystallization furnace, and the feeding port of the discharging furnace is docked with the discharging port of the crystallization furnace; A second conveying structure is provided in the feeding furnace, a third conveying structure is provided in the discharging furnace, and the conveying surfaces of the first conveying structure, the second conveying structure and the third conveying structure are arranged on the same plane; There are at least two crystallization furnaces, and the two or more crystallization furnaces are arranged side by side between the feeding furnace and the discharging furnace; or, the length of the crystallization furnace is greater than the length of the feeding furnace and the discharging furnace.

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