Process and device for cleaning photomask substrate after chemical mechanical polishing

Abstract

The invention provides a cleaning process and device for a photomask substrate after chemical mechanical polishing, and the process comprises the following steps: cleaning the photomask substrate after chemical mechanical polishing by sequentially using an alkaline cleaning agent, an acidic cleaning agent, an SC1 cleaning solution, hydrofluoric acid and ozone, and synchronously treating by adopting ultrasonic waves in the cleaning process, the cleaned photomask substrate is obtained; the photomask substrate cleaned each time is rinsed, and after rinsing is completed, the rinsed photomask substrate is obtained; and carrying out drying treatment on the rinsed photomask substrate to obtain the cleaned photomask substrate. According to the method, the alkaline cleaning agent, the acidic cleaning agent, the SC1 cleaning solution, the hydrofluoric acid and the ozone are sequentially used for cleaning the photomask substrate, rinsing is carried out after each time of cleaning, and finally drying is carried out, so that impurities such as residual particles, organic matters, the cleaning agent and water stains attached to the photomask substrate can be effectively removed, and the cleaning effect of the polished photomask substrate is improved.

Description

Technical Field

[0001] The present application relates to the technical field of photomask substrate processing, and in particular to a cleaning process and device for a photomask substrate after chemical mechanical polishing. Background Art

[0002] Photomask substrates, also known as chromium-coated plates, are the mainstream photosensitive materials for the production of micro-machining photomasks in the present and future, and have the advantages of high photosensitivity, high resolution, low defect density, wear resistance, easy cleaning, and long service life. The product structure is to deposit chromium nitride-chromium nitride oxide thin films on a flat, high-finish glass substrate by DC magnetron sputtering to form a chromium film substrate, and then coat a layer of photoresist (also known as photoresist) or electron beam resist on it.

[0003] The substrate material of the photomask substrate is mainly composed of a glass substrate, including ordinary soda lime glass and quartz glass. The glass substrate material is required to have high flatness and high finish. First, the substrate material needs to be processed by chemical mechanical polishing. During the polishing process, cerium oxide and silicon dioxide and other polishing liquids are mainly used as the main polishing auxiliary materials. After polishing, the particles generated during the polishing process such as cerium oxide and silicon dioxide will adhere to the glass substrate. The subsequent process requires the polished glass substrate to be precisely cleaned.

[0004] Currently, existing cleaning processes and devices have poor cleaning effects on polished glass substrates.

[0005] Therefore, how to improve the cleaning effect of the polished glass substrate becomes a problem that needs to be solved.

[0006] The above information disclosed in the background section is only for enhancing understanding of the background of the present application and therefore it may contain information that does not form the prior art known to a person of ordinary skill in the art. Summary of the invention

[0007] The present application provides a cleaning process and device for a photomask substrate after chemical mechanical polishing, which are used to solve the problems existing in the prior art.

[0008] In a first aspect, the present application provides a cleaning process for a photomask substrate after chemical mechanical polishing, comprising:

[0009] S100, using an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, hydrofluoric acid, and ozone in sequence to clean the photomask substrate after chemical mechanical polishing, and using ultrasonic waves to simultaneously perform treatment during the above cleaning processes to obtain a cleaned photomask substrate;

[0010] S200, rinsing the photomask substrate after each cleaning in S100, and obtaining a rinsed photomask substrate after the rinsing is completed;

[0011] S300 , drying the rinsed photomask substrate to remove the residual water film on the photomask substrate, thereby obtaining a cleaned photomask substrate.

[0012] In some embodiments, the cleaning process of S100 specifically includes:

[0013] S101, using an alkaline cleaning agent to perform a first cleaning on the photomask substrate, and simultaneously using ultrasonic waves to perform synchronous treatment, to obtain a photomask substrate after the first cleaning;

[0014] S102, using an acidic cleaning agent to perform a second cleaning on the photomask substrate after the first cleaning, and simultaneously using ultrasonic waves to perform synchronous processing, to obtain a photomask substrate after the second cleaning;

[0015] S103, using SC1 cleaning solution to perform a third cleaning on the photomask substrate after the second cleaning, and simultaneously using ultrasonic waves to perform synchronous treatment, to obtain a photomask substrate after the third cleaning;

[0016] S104, cleaning the photomask substrate after the third cleaning with hydrofluoric acid, and simultaneously treating it with ultrasonic waves to obtain a photomask substrate after the fourth cleaning;

[0017] S105 , cleaning the photomask substrate after the fourth cleaning with ozone, and simultaneously treating it with ultrasound to obtain the photomask substrate after the fifth cleaning, that is, the cleaned photomask substrate.

[0018] In some embodiments, the concentration of the alkaline cleaning agent is 5-10%, and the use temperature is 30-60°C.

[0019] In some embodiments, the concentration of the acid cleaning agent is 3-5%, and the use temperature is 30-60°C.

[0020] In some embodiments, in S104, the concentration of the hydrofluoric acid is 0.5-1%, the operating temperature is 30-60° C., and the cleaning soaking time does not exceed 60 seconds.

[0021] In some embodiments, the S200 includes:

[0022] S201, after cleaning the photomask substrate with an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, and hydrofluoric acid, rinsing is performed by pure water spraying, nitrogen bubbling, and pure water rapid discharge;

[0023] S202, after cleaning the photomask substrate with ozone, rinsing is performed by nitrogen bubbling and overflow rinsing.

[0024] In some embodiments, in S202, the nitrogen flow rate is controlled at 30-100 L / min.

[0025] In some embodiments, the S300 includes:

[0026] S301, drying the rinsed photomask substrate for the first time by slowly pulling with pure water, wherein the pure water temperature is 50-80° C. and the pulling speed is 10-50 mm / min, to obtain the photomask substrate after the first drying;

[0027] S302, using clean hot air to perform a second drying on the photomask substrate after the first drying, with the hot air temperature set to 70-120°C, to obtain the photomask substrate after the second drying.

[0028] In some embodiments, the ratio of hydrogen peroxide, ammonia and water in the SC1 cleaning solution is 1:1:500.

[0029] In a second aspect, the present application provides a cleaning device for a photomask substrate after chemical mechanical polishing, comprising:

[0030] A cleaning unit, which sequentially uses an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, hydrofluoric acid, and ozone to clean the photomask substrate after chemical mechanical polishing, and ultrasonic waves are used synchronously in the above cleaning processes to obtain a cleaned photomask substrate;

[0031] A rinsing unit, rinsing the photomask substrate after each cleaning, and obtaining a rinsed photomask substrate after the rinsing is completed;

[0032] The drying unit dries the rinsed photomask substrate to remove the residual water film on the photomask substrate to obtain a cleaned photomask substrate.

[0033] The present application provides a cleaning process and device for a photomask substrate after chemical mechanical polishing. The cleaning process includes: using an alkaline cleaning agent, an acidic cleaning agent, an SC1 cleaning liquid, hydrofluoric acid, and ozone in sequence to clean the photomask substrate after chemical mechanical polishing, and using ultrasonic waves to simultaneously treat the cleaning process to obtain a cleaned photomask substrate; rinsing the photomask substrate after each cleaning, and obtaining a rinsed photomask substrate after rinsing; drying the rinsed photomask substrate to remove the residual water film on the photomask substrate to obtain a cleaned photomask substrate. The present application uses an alkaline cleaning agent, an acidic cleaning agent, an SC1 cleaning liquid, hydrofluoric acid, and ozone to clean the photomask substrate in sequence, and rinses the photomask substrate after each cleaning, and finally dries it, so as to effectively remove impurities such as residual particles, organic matter, cleaning agents, and water stains attached to the photomask substrate, thereby improving the cleaning effect of the photomask substrate after polishing. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0035] Figure 1 A flow chart of a cleaning process after chemical mechanical polishing of a photomask substrate provided in the present application;

[0036] Figure 2 A schematic diagram of a cleaning process after chemical mechanical polishing of a photomask substrate provided in the present application.

[0037] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The singular forms "a", "an" and "the" used in the embodiments of the present application are also intended to include plural forms, unless the context clearly indicates other meanings.

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" and "several" mean two or more, unless otherwise clearly and specifically defined.

[0041] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the conditions under which this application can be implemented. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in this application without affecting the effects and purposes that can be achieved by this application.

[0042] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0043] As used herein, the words "if" and "if" may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)", depending on the context.

[0044] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a product or system including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such a product or system. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the product or system including the elements.

[0045] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0046] Figure 1 The flowchart of the cleaning process after chemical mechanical polishing of the photomask substrate provided in this application is as follows: Figure 2 A schematic diagram of a cleaning process after chemical mechanical polishing of a photomask substrate provided in this application, such as Figure 1 , Figure 2 As shown, the present application provides a cleaning process for a photomask substrate after chemical mechanical polishing, comprising:

[0047] S100, using an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, hydrofluoric acid (DHF acid), and ozone in sequence to clean the photomask substrate after chemical mechanical polishing, and using ultrasonic waves to simultaneously perform treatment during the above cleaning processes to obtain a cleaned photomask substrate;

[0048] In some embodiments, the cleaning process of S100 specifically includes:

[0049] S101, using an alkaline cleaning agent to perform a first cleaning on the photomask substrate, and simultaneously using ultrasonic waves to perform synchronous treatment, to obtain a photomask substrate after the first cleaning;

[0050] In some embodiments, the concentration of the alkaline cleaning agent is 5-10%, and the use temperature is 30-60°C.

[0051] Specifically, in the embodiment of the present application, 40KHZ ordinary ultrasound is used in S101, and the ultrasound power density is 2W / cm 2 .

[0052] It should be noted that in this stage, the cavitation effect of ultrasound in the liquid is used to remove particles and other impurities remaining on the glass substrate. The cleaning time can be adjusted according to the cleaning effect. The main purpose of this treatment step is to remove particles larger than 1 micron and organic residues through the cleaning effect of alkaline detergent and the cavitation effect of ultrasound.

[0053] After completing the first cleaning, QDR technology, i.e., pure water quick drain rinsing process, is used. This process includes pure water spraying, nitrogen bubbling and pure water quick drain treatment. The number of pure water quick drains depends on the cleaning effect. Generally, the water is quickly drained 2-3 times within one cleaning cycle (i.e., from the start of the last cleaning to the start of the next cleaning). This technology can effectively remove particles remaining on the surface of the substrate and detergents remaining from pre-treatment.

[0054] S102, using an acidic cleaning agent to perform a second cleaning on the photomask substrate after the first cleaning, and simultaneously using ultrasonic waves to perform synchronous processing, to obtain a photomask substrate after the second cleaning;

[0055] In some embodiments, the concentration of the acid cleaning agent is 3-5%, and the use temperature is 30-60°C.

[0056] Specifically, in the embodiment of the present application, ordinary ultrasound at 80KHZ is used in S102, and the ultrasound power density is 1W / cm 2 .

[0057] It should be noted that in this stage, the cavitation effect of ultrasound in the liquid is used to remove particles and other impurities remaining on the glass substrate. The cleaning time can be adjusted according to the cleaning effect. The main purpose of this treatment step is to remove particles larger than 1 micron through the cleaning effect of the acidic detergent and the cavitation effect of ultrasound.

[0058] After completing the second cleaning, QDR technology, i.e., pure water quick drain rinsing process, is used. This process includes pure water spraying, nitrogen bubbling and pure water quick discharge treatment. The number of pure water quick discharges depends on the cleaning effect. Generally, the water is quickly drained 1-2 times within a cleaning cycle (i.e., from the start of the last cleaning to the start of the next cleaning). This technology can effectively remove particles remaining on the surface of the substrate and detergents remaining from pre-treatment.

[0059] S103, using SC1 cleaning solution to perform a third cleaning on the photomask substrate after the second cleaning, and simultaneously using ultrasonic waves to perform synchronous treatment, to obtain a photomask substrate after the third cleaning;

[0060] In some embodiments, the ratio of hydrogen peroxide, ammonia and water in the SC1 cleaning solution is 1:1:500.

[0061] Specifically, in the embodiment of the present application, a diluted SC1 cleaning solution is used, and the solution is automatically replenished during the process control process. The use temperature is 30-60°C. The process utilizes the oxidation and reduction reactions of the medium hydrogen peroxide and ammonia in the SC1 cleaning solution to effectively peel off fine particles. At the same time, ultrasonic waves are used. The ultrasonic waves use ordinary ultrasound waves of 100KHZ, and the ultrasonic power density is 1W / cm 2 , the cavitation effect of ultrasound in liquid is used to remove particles and other impurities remaining on the glass substrate. The cleaning time can be adjusted according to the cleaning effect. The main purpose of this processing step is to remove particles larger than 1 micron through the cleaning effect of SC1 cleaning liquid and the cavitation effect of ultrasound.

[0062] After the third cleaning, QDR technology is used, i.e., pure water quick drain rinsing process. This process includes pure water spraying, nitrogen bubbling and pure water quick discharge treatment. The number of pure water quick discharges depends on the cleaning effect. Generally, the water is quickly drained 2-3 times within one cleaning cycle (i.e., from the start of the last cleaning to the start of the next cleaning). This technology can effectively remove particles remaining on the surface of the substrate and residual ammonia ions from the pre-treatment.

[0063] S104, cleaning the photomask substrate after the third cleaning with diluted hydrofluoric acid, and simultaneously treating it with ultrasonic waves to obtain a photomask substrate after the fourth cleaning;

[0064] In some embodiments, the concentration of the hydrofluoric acid is 0.5-1%, the operating temperature is 30-60° C., and the cleaning soaking time does not exceed 60 seconds.

[0065] It should be noted that this stage is automatically replenished during the process control process. This process uses the corrosive effect of hydrofluoric acid on glass to peel off the firmly adhered particles. Since hydrofluoric acid has a significant corrosive effect on glass, the cleaning immersion time needs to be strictly controlled, and the cleaning immersion time is generally set to no more than 60 seconds. Because there is a certain amount of stress damage on the surface of the polished photomask glass substrate, a long hydrofluoric acid immersion time may lead to a significant increase in defects such as scratches caused by stress.

[0066] This process is combined with the use of ultrasound, which uses 100KHZ ordinary ultrasound with an ultrasonic power density of 1W / cm 2 , the cavitation effect of ultrasound in liquid is used to remove particles and other impurities remaining on the glass substrate. The cleaning time can be adjusted according to the cleaning effect. The main purpose of this treatment step is to remove particles larger than 1 micron through the corrosion effect of hydrofluoric acid and the cavitation effect of ultrasound.

[0067] After completing the fourth cleaning, QDR technology, i.e., pure water quick drain rinsing process, is used. This process includes pure water spraying, nitrogen bubbling and pure water quick discharge treatment. The number of pure water quick discharges depends on the cleaning effect. Generally, the water is quickly drained 2-3 times within one cleaning cycle (i.e., from the start of the last cleaning to the start of the next cleaning). This technology can effectively remove particles remaining on the surface of the substrate and fluoride ions remaining in the pre-treatment steps.

[0068] S105 , cleaning the photomask substrate after the fourth cleaning with ozone, and simultaneously treating it with ultrasound to obtain the photomask substrate after the fifth cleaning, that is, the cleaned photomask substrate.

[0069] Specifically, in the embodiment of the present application, mega-ultrasound with a power density greater than 950 kHz is used in S105, and the ultrasonic power density is 0.5 W / cm 2 , using the impact force of mega-ultrasound in the liquid, remove the tiny particles and other impurities remaining on the glass substrate. The cleaning time can be adjusted according to the cleaning effect. At the same time, ozone cleaning is used in this stage. This processing unit is equipped with an ozone generator, which converts ozone into the pure water of this processing unit. The main purpose of this processing step is to use the cleaning effect of mega-ultrasound in combination with the use of ozone to remove particles larger than 0.2 microns; and to remove tiny bacteria and other organic matter through the strong oxidizing effect of ozone.

[0070] After completing the fifth cleaning, a nitrogen bubbling overflow rinsing process is adopted. The main cleaning medium in this treatment step is pure water. By evenly and densely distributing nitrogen outlets at the bottom of the processing unit, clean nitrogen is evenly passed to the bottom of the pure water unit. The nitrogen flow rate is controlled at 30-100L / min. The impact force of nitrogen in water is used to rinse and remove very small particles attached to the surface of the substrate. This technology can effectively remove very small particles remaining on the surface of the substrate.

[0071] It should be noted that in S101-S105, electronic grade ultrapure water is used as the cleaning medium.

[0072] S300 , drying the rinsed photomask substrate to remove the residual water film on the photomask substrate, thereby obtaining a cleaned photomask substrate.

[0073] In some embodiments, the S300 includes:

[0074] S301, drying the rinsed photomask substrate for the first time by slowly pulling with pure water, wherein the pure water temperature is 50-80° C. and the pulling speed is 10-50 mm / min, to obtain the photomask substrate after the first drying;

[0075] S302, using clean hot air to perform a second drying on the photomask substrate after the first drying, the hot air temperature is set to 70-120°C, and the hot air is used to remove the water film remaining on the substrate surface after the warm water slow pull drying, so that the substrate can achieve a more thorough drying effect, and obtain the photomask substrate after the second drying.

[0076] The present application is composed of 12 processing units, including 5 cleaning units, 5 rinsing units and 2 drying units. After the polished photomask substrate is processed by the cleaning process of the present application, the cleaning effect can achieve less than 20 particles larger than 0.2 microns attached to the photomask substrate.

[0077] The present application uses alkaline cleaning agent, acidic cleaning agent, SC1 cleaning liquid, hydrofluoric acid, and ozone to clean the photomask substrate in sequence, rinses the photomask substrate after each cleaning, and finally dries it. It can effectively remove residual particles, organic matter, cleaning agents, water stains and other impurities attached to the photomask substrate, and improve the cleaning effect of the polished photomask substrate.

[0078] The present application also provides a cleaning device for a photomask substrate after chemical mechanical polishing, comprising:

[0079] A cleaning unit, which sequentially uses an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, hydrofluoric acid, and ozone to clean the photomask substrate after chemical mechanical polishing, and ultrasonic waves are used synchronously in the above cleaning processes to obtain a cleaned photomask substrate;

[0080] A rinsing unit, rinsing the photomask substrate after each cleaning, and obtaining a rinsed photomask substrate after the rinsing is completed;

[0081] The drying unit dries the rinsed photomask substrate to remove the residual water film on the photomask substrate to obtain a cleaned photomask substrate.

[0082] It should be understood that, although the various steps in the flowcharts in the above-described embodiments are sequentially displayed according to the indications of the arrows, these steps are not necessarily executed sequentially in the order indicated by the arrows. Unless there is a clear description in this article, the execution of these steps is not strictly limited in order, and they can be executed in other orders. Moreover, at least a portion of the steps in the figure may include a plurality of sub-steps or a plurality of stages, and these sub-steps or stages are not necessarily executed at the same time, but can be executed at different times, and their execution order is not necessarily to be carried out sequentially, but can be executed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.

[0083] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the application disclosed herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the general principles of the present application and includes common knowledge or customary techniques in the art that are not disclosed in the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the claims.

[0084] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A cleaning process for a photomask substrate after chemical mechanical polishing, characterized in that: include: S100, using an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, hydrofluoric acid, and ozone in sequence to clean the photomask substrate after chemical mechanical polishing, and using ultrasonic waves to simultaneously perform treatment during the above cleaning processes to obtain a cleaned photomask substrate; S200, rinsing the photomask substrate after each cleaning in S100, and obtaining a rinsed photomask substrate after the rinsing is completed; S300 , drying the rinsed photomask substrate to remove the residual water film on the photomask substrate, thereby obtaining a cleaned photomask substrate.

2. The cleaning process according to claim 1, characterized in that: The cleaning process of S100 specifically includes: S101, using an alkaline cleaning agent to perform a first cleaning on the photomask substrate, and simultaneously using ultrasonic waves to perform synchronous treatment, to obtain a photomask substrate after the first cleaning; S102, using an acidic cleaning agent to perform a second cleaning on the photomask substrate after the first cleaning, and simultaneously using ultrasonic waves to perform synchronous processing, to obtain a photomask substrate after the second cleaning; S103, using SC1 cleaning solution to perform a third cleaning on the photomask substrate after the second cleaning, and simultaneously using ultrasonic waves to perform synchronous treatment, to obtain a photomask substrate after the third cleaning; S104, cleaning the photomask substrate after the third cleaning with hydrofluoric acid, and simultaneously treating it with ultrasonic waves to obtain a photomask substrate after the fourth cleaning; S105 , cleaning the photomask substrate after the fourth cleaning with ozone, and simultaneously treating it with ultrasound to obtain the photomask substrate after the fifth cleaning, that is, the cleaned photomask substrate.

3. The cleaning process according to claim 2, characterized in that: The concentration of the alkaline cleaning agent is 5-10%, and the use temperature is 30-60°C.

4. The cleaning process according to claim 2, characterized in that: The concentration of the acid cleaning agent is 3-5%, and the use temperature is 30-60°C.

5. The cleaning process according to claim 2, characterized in that: In S104, the concentration of the hydrofluoric acid is 0.5-1%, the use temperature is 30-60° C., and the cleaning soaking time does not exceed 60 seconds.

6. The cleaning process according to claim 1, characterized in that: The S200 includes: S201, after cleaning the photomask substrate with an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, and hydrofluoric acid, rinsing is performed by pure water spraying, nitrogen bubbling, and pure water rapid discharge; S202, after cleaning the photomask substrate with ozone, rinsing is performed by nitrogen bubbling and overflow rinsing.

7. The cleaning process according to claim 6, characterized in that: In the S202, the nitrogen flow rate is controlled at 30-100 L / min.

8. The cleaning process according to claim 1, characterized in that: The S300 includes: S301, drying the rinsed photomask substrate for the first time by slowly pulling with pure water, wherein the pure water temperature is 50-80° C. and the pulling speed is 10-50 mm / min, to obtain the photomask substrate after the first drying; S302, using clean hot air to perform a second drying on the photomask substrate after the first drying, with the hot air temperature set to 70-120°C, to obtain the photomask substrate after the second drying.

9. The cleaning process according to any one of claims 1 to 8, characterized in that: The ratio of hydrogen peroxide, ammonia and water in the SC1 cleaning solution is 1:1:

500.

10. A cleaning device for a photomask substrate after chemical mechanical polishing, characterized in that: include: A cleaning unit, which sequentially uses an alkaline cleaning agent, an acid cleaning agent, an SC1 cleaning solution, hydrofluoric acid, and ozone to clean the photomask substrate after chemical mechanical polishing, and ultrasonic waves are used synchronously in the above cleaning processes to obtain a cleaned photomask substrate; A rinsing unit, rinsing the photomask substrate after each cleaning, and obtaining a rinsed photomask substrate after the rinsing is completed; The drying unit dries the rinsed photomask substrate to remove the residual water film on the photomask substrate to obtain a cleaned photomask substrate.

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