Method, device and equipment for determining optimal aging condition of semiconductor laser

Abstract

The invention discloses a method, a device and equipment for determining an optimal aging condition of a semiconductor laser, relates to the technical field of optical communication, and can solve the technical problem that the optimal aging condition of the semiconductor laser is determined inaccurately due to the fact that interference caused by chip junction temperature change due to application of driving current is not eliminated at present. Comprising the following steps: acquiring a to-be-tested semiconductor laser chip, and testing first wavelength values at different temperatures and saturation current corresponding to saturation optical power based on threshold current of the to-be-tested semiconductor laser chip; packaging the to-be-tested semiconductor laser chip into an assembly, and testing a second wavelength value of the assembly at a preset fixed environment temperature and under different driving currents; according to the first wavelength value, the second wavelength value, the saturation current and the driving current, determining an ultimate aging current at a preset fixed environment temperature; and performing an aging test based on the preset fixed environment temperature and the limit aging current to obtain an optimal aging condition.

Description

Technical Field

[0001] The present invention relates to the field of optical communication technology, and in particular to a method, device and equipment for determining optimal aging conditions of a semiconductor laser. Background Art

[0002] Laser chips are also called laser chips. Their reliability is a very critical indicator. Whether it is a low-power laser transmitter or a laser communication chip with higher requirements, chip aging and reliability tests are required. Therefore, aging is an important process in laser product screening. Products with a potentially short lifespan are screened out, so that the remaining large number of lasers have satisfactory and acceptable reliability.

[0003] Chip aging needs to be carried out under optimal aging conditions to effectively eliminate early failure samples without causing additional damage to the chip. However, changes in chip junction temperature caused by the application of driving current will cause interference, making it difficult to accurately determine the optimal aging conditions for semiconductor lasers. Currently, there is an urgent need for a method that can accurately determine the optimal aging conditions for semiconductor lasers. Summary of the invention

[0004] In view of this, the present invention provides a method, device and equipment for determining the optimal aging conditions of a semiconductor laser, which can solve the current technical problem that the optimal aging conditions of a semiconductor laser are inaccurately determined due to interference caused by changes in chip junction temperature caused by applying a driving current.

[0005] According to a first aspect of the present invention, a method for determining an optimal aging condition of a semiconductor laser is provided, the method comprising:

[0006] Acquire a semiconductor laser chip to be tested, and test the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power based on the threshold current of the semiconductor laser chip to be tested;

[0007] The semiconductor laser chip to be tested is packaged into a component, and the second wavelength value of the component is tested under different driving currents at a preset fixed ambient temperature;

[0008] Determine the limit aging current at the preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current and the driving current;

[0009] An aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain an optimal aging condition.

[0010] Preferably, determining the limit aging current at the preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current and the driving current includes:

[0011] Determine a target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the drive current, and use the target current as the limit aging current under the preset fixed ambient temperature.

[0012] Preferably, the determining the target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the drive current includes:

[0013] Constructing a first fitting curve between the first wavelength value and the saturation current;

[0014] Constructing a second fitting curve between the second wavelength value and the driving current;

[0015] The point where the first fitting curve intersects with the second fitting curve is fitted to obtain a target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the drive current.

[0016] Preferably, the aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain the optimal aging condition, including:

[0017] Obtaining a second preset number of chips to be tested for aging;

[0018] Obtaining a preset step size, and setting different test drive currents according to the preset step size based on the limit aging current;

[0019] Obtaining a preset aging time, a preset extended aging time, and a high-temperature working life test time, and performing an aging test on all the chips to be tested for aging based on the preset fixed ambient temperature and the test drive current at the preset aging time, the preset extended aging time, and the high-temperature working life test time, respectively, to obtain a first failure number, a newly added failure number, and a second failure number;

[0020] An optimal aging condition is determined according to the number of newly added failures and the second number of failures.

[0021] Preferably, the step of obtaining the semiconductor laser chip to be tested and testing the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power based on the threshold current of the semiconductor laser chip to be tested comprises:

[0022] Acquire a first preset number of semiconductor laser chips to be tested;

[0023] Calculating the sum of the threshold current and the preset current of the semiconductor laser chip to be tested to obtain an initial spectrum value, and testing the first initial wavelength value and the initial saturation current corresponding to the saturation optical power of each semiconductor laser chip to be tested at different temperatures under the initial spectrum value;

[0024] Calculating an average of the first initial wavelength values ​​to obtain a first wavelength value;

[0025] The average of the initial saturation currents is calculated to obtain the saturation current.

[0026] Preferably, packaging the semiconductor laser chip to be tested into a component, and testing the second wavelength value of the component under different driving currents at a preset fixed ambient temperature, comprises:

[0027] Packing one of the semiconductor laser chips to be tested into a component, and testing the second initial wavelength value of each component under a preset fixed ambient temperature and different driving currents;

[0028] The average of the second initial wavelength values ​​is calculated to obtain a second wavelength value.

[0029] Preferably, before testing the second wavelength value of the component at a preset fixed ambient temperature and different driving currents, the method further comprises:

[0030] Set the starting drive current, ending drive current and drive current step to obtain different drive currents.

[0031] According to a second aspect of the present invention, there is provided a device for determining an optimal aging condition of a semiconductor laser, the device comprising:

[0032] A first test module is used to obtain a semiconductor laser chip to be tested, and test a first wavelength value at different temperatures and a saturation current corresponding to a saturation optical power based on a threshold current of the semiconductor laser chip to be tested;

[0033] A second testing module is used to package the semiconductor laser chip to be tested into a component, and test the second wavelength value of the component under different driving currents at a preset fixed ambient temperature;

[0034] A determination module, configured to determine a limit aging current at a preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current, and the drive current;

[0035] The test module is used to perform an aging test based on the preset fixed ambient temperature and the limit aging current to obtain an optimal aging condition.

[0036] According to a third aspect of the present application, a storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the method for determining the optimal aging condition of the semiconductor laser described above is implemented.

[0037] According to a fourth aspect of the present application, a computer device is provided, comprising a storage medium, a processor, and a computer program stored on the storage medium and executable on the processor, wherein the processor implements the method for determining the optimal aging condition of the semiconductor laser when executing the program.

[0038] By means of the above technical scheme, the present invention provides a method, device and equipment for determining the optimal aging condition of a semiconductor laser. First, a semiconductor laser chip to be tested is obtained, and the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power are tested based on the threshold current of the semiconductor laser chip to be tested; then, the semiconductor laser chip to be tested is packaged into a component, and the second wavelength value of the component under different driving currents at a preset fixed ambient temperature is tested; next, the limit aging current at the preset fixed ambient temperature is determined according to the first wavelength value, the second wavelength value, the saturation current and the driving current; finally, an aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain the optimal aging condition. Through the technical scheme of the present invention, since the junction temperature of the chip is the same when the wavelength value of the chip is the same, in order to eliminate the interference caused by the junction temperature of the chip, the wavelength value of the chip under different conditions is the same as the goal, and this condition is obtained. The aging test is performed according to this condition, which is the optimal aging condition. In order to improve the efficiency of determining this condition, the control variable method is used to set different conditions as different conditions 1 and 2. Condition 1: only the temperature changes, and condition 2: only the drive current changes at a preset fixed ambient temperature. In this way, when the wavelength is the same, the only target current, that is, the limit aging current, can be determined at the preset fixed ambient temperature. This effectively eliminates the interference caused by the change in chip junction temperature due to the application of the drive current, and effectively improves the accuracy of determining the optimal aging conditions of the semiconductor laser.

[0039] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the local application. In the drawings:

[0041] Figure 1 A schematic flow chart of a method for determining an optimal aging condition of a semiconductor laser provided by an embodiment of the present invention is shown;

[0042] Figure 2 A schematic flow chart of another method for determining an optimal aging condition of a semiconductor laser provided by an embodiment of the present invention is shown;

[0043] Figure 3 A schematic diagram showing the structure of a device for determining an optimal aging condition of a semiconductor laser provided by an embodiment of the present invention;

[0044] Figure 4 A schematic structural diagram of another device for determining optimal aging conditions of a semiconductor laser provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0045] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments. It should be noted that the embodiments and features in the embodiments of the present invention can be combined with each other without conflict.

[0046] This embodiment provides a method for determining the optimal aging condition of a semiconductor laser. Figure 1 As shown, the method includes:

[0047] 101. Obtain a semiconductor laser chip to be tested, and test first wavelength values ​​at different temperatures and saturation currents corresponding to saturation optical powers based on threshold currents of the semiconductor laser chip to be tested.

[0048] In this embodiment, the threshold current distribution interval range of the semiconductor laser chip to be tested is ≤0.1 mA, and the wavelength distribution interval range of the semiconductor laser chip to be tested is ≤0.1 nm.

[0049] 102. Package the semiconductor laser chip to be tested into a component, and test the second wavelength value of the component under different driving currents at a preset fixed ambient temperature.

[0050] 103. Determine a limit aging current at the preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current, and the driving current.

[0051] 104. Perform an aging test based on the preset fixed ambient temperature and the limit aging current to obtain an optimal aging condition.

[0052] For the embodiment steps 101-104, since when the wavelength value of the chip is the same, the junction temperature of the chip is also the same, therefore, in order to eliminate the interference caused by the junction temperature of the chip, the wavelength value of the chip under different conditions is the same as the goal, and this condition is obtained. The aging test is performed according to this condition, which is the optimal aging condition. In order to improve the efficiency of determining this condition, the control variable method is adopted to set different conditions as different conditions 1 and 2. Condition 1: only the temperature changes (i.e., at different temperatures in the embodiment step 101), condition 2: at a preset fixed ambient temperature, only the driving current changes (i.e., at different driving currents in the embodiment step 102). In this way, when the wavelength is the same (i.e., in the embodiment step 103, the first wavelength value is the same as the second wavelength value), the only target current at the preset fixed ambient temperature can be determined, that is, the limit aging current. Thus, the interference caused by the change of the chip junction temperature caused by the application of the driving current is efficiently eliminated, and the accuracy of determining the optimal aging condition of the semiconductor laser is efficiently improved. Then in the embodiment step 104, the aging test is performed to obtain the optimal aging condition.

[0053] The present invention provides a method, device and equipment for determining the optimal aging condition of a semiconductor laser. First, a semiconductor laser chip to be tested is obtained, and the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power are tested based on the threshold current of the semiconductor laser chip to be tested; then, the semiconductor laser chip to be tested is packaged into a component, and the second wavelength value of the component under different driving currents at a preset fixed ambient temperature is tested; next, the limit aging current at the preset fixed ambient temperature is determined based on the first wavelength value, the second wavelength value, the saturation current and the driving current; finally, an aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain the optimal aging condition. Through the technical solution of the present invention, since the junction temperature of the chip is the same when the wavelength value of the chip is the same, in order to eliminate the interference caused by the junction temperature of the chip, the wavelength value of the chip under different conditions is the same as the goal, and this condition is obtained. The aging test is performed according to this condition, which is the optimal aging condition. In order to improve the efficiency of determining this condition, the control variable method is used to set different conditions as different conditions 1 and 2. Condition 1: only the temperature changes, and condition 2: only the drive current changes at a preset fixed ambient temperature. In this way, when the wavelength is the same, the only target current, that is, the limit aging current, can be determined at the preset fixed ambient temperature. This effectively eliminates the interference caused by the change in chip junction temperature due to the application of the drive current, and effectively improves the accuracy of determining the optimal aging conditions of the semiconductor laser.

[0054] Further, as a refinement and extension of the specific implementation of the above embodiment, in order to fully illustrate the specific implementation process of this embodiment, another method for determining the optimal aging condition of a semiconductor laser is provided, such as Figure 2 As shown, the method includes:

[0055] 201. Obtain a first preset number of semiconductor laser chips to be tested.

[0056] 202. Calculate the sum of the threshold current and the preset current of the semiconductor laser chip to be tested to obtain an initial spectrum value, and under the initial spectrum value, test the first initial wavelength value of each semiconductor laser chip to be tested at different temperatures and the initial saturation current corresponding to the saturation optical power.

[0057] 203. Calculate an average of the first initial wavelength values ​​to obtain a first wavelength value, and calculate an average of the initial saturation currents to obtain a saturation current.

[0058] For the steps 201-203 of the embodiment, the laser will generate a laser of a specific wavelength when current is injected, but not all currents will generate lasers. The relationship between the optical power and the current is that the light will only start to emit light when a "certain current" is reached. This high current point at which light starts to emit light is called the threshold current. By applying some preset currents based on the threshold current, a relatively stable initial spectrum value can be obtained. Preferably, the preset current can be selected within the range of 1 to 2 mA, such as 1.5 mA. Then, each semiconductor laser chip to be tested is tested at different temperatures, and the first initial wavelength value under the initial spectrum value and the initial saturation current corresponding to the saturated optical power are recorded.

[0059] In order to reduce the error, the average of the first initial wavelength value is calculated to obtain the first wavelength value. Similarly, the average of the initial saturation current is calculated to obtain the saturation current.

[0060] 204. Set a starting driving current, an ending driving current and a driving current step to obtain different driving currents, package a semiconductor laser chip to be tested into a component, and test the second initial wavelength value of each component under different driving currents at a preset fixed ambient temperature.

[0061] 205. Calculate the average of the second initial wavelength values ​​to obtain a second wavelength value.

[0062] For steps 204 and 205 of the embodiment, the starting drive current is the first drive current, the starting drive current plus one drive current step is the second drive current, the starting drive current plus two drive current steps is the third drive current, until the ending drive current is the last drive current, the component can be a To or COC component, after each semiconductor laser chip to be tested is packaged into a component, all the components are placed in an aging device, the oven ambient temperature is set, that is, the preset fixed ambient temperature, and during the test process, the second initial wavelength value of each semiconductor laser chip to be tested under different drive currents is recorded.

[0063] In order to reduce the error, the average of the second initial wavelength values ​​is calculated to obtain the second wavelength value.

[0064] 206. Determine a target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the drive current, and use the target current as a limit aging current at the preset fixed ambient temperature.

[0065] For this embodiment, as an implementation method, determining the target current when the first wavelength value is equal to the second wavelength value, and the saturation current is equal to the drive current, includes: constructing a first fitting curve of the first wavelength value and the saturation current; constructing a second fitting curve of the second wavelength value and the drive current; fitting the points where the first fitting curve intersects with the second fitting curve to obtain the target current when the first wavelength value is equal to the second wavelength value, and the saturation current is equal to the drive current.

[0066] Since only the temperature changes in the first fitting curve and only the driving current changes in the second fitting curve, when the wavelengths are the same (that is, when the first fitting curve intersects the second fitting curve), the target current that makes the saturation current equal to the driving current under the preset fixed ambient temperature of the second fitting curve can be determined. This target current is the limit aging current under the preset fixed ambient temperature.

[0067] 207. Perform an aging test based on the preset fixed ambient temperature and the limit aging current to obtain an optimal aging condition.

[0068] With the preset fixed ambient temperature and the limit aging current as the limit aging conditions, for this embodiment, the aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain the optimal aging condition, including: obtaining a second preset number of chips to be tested for aging; obtaining a preset step size, and based on the limit aging current, setting different test drive currents according to the preset step size; obtaining a preset aging time, a preset extended aging time, and a high-temperature working life test time, and performing aging tests on all the chips to be tested for aging based on the preset fixed ambient temperature and the test drive current at the preset aging time, the preset extended aging time, and the high-temperature working life test time, respectively, to obtain a first failure number, a newly added failure number, and a second failure number; determining the optimal aging condition according to the newly added failure number and the second failure number.

[0069] Wherein, the preset step size is obtained, based on the limit aging current, and different test drive currents are set according to the preset step size, including: the limit aging current is the first test drive current, and on the basis of the limit aging current, one preset step size is reduced to obtain the second test drive current, and on the basis of the limit aging current, two preset step sizes are reduced to obtain the third test drive current... thereby obtaining different test drive currents, wherein, preferably, the preset step size can be selected as 0.2*limit aging current or 20mA. Wherein, the number of newly added failures corresponding to the preset extended aging time refers to the aging that is extended on the basis of the preset aging time, which is newly added compared to the first failure time, and preferably, the preset extended aging time = preset aging time*2.

[0070] For the high temperature operating life test (HTOL), preferably, the conditions are set at 85°C / 60-80mA.

[0071] As for determining the optimal aging condition according to the number of newly added failures and the second number of failures, as an implementation mode, if the number of newly added failures is 0 and the random failure rate during HTOL is controlled at ≤0.03%, the preset fixed ambient temperature and the current at this time are the optimal aging conditions.

[0072] The following uses specific data to illustrate the steps 201-207 of the embodiment:

[0073] Step 1: Take 3Lot*11PCS chips from different batches as the chips to be tested for aging. The temperature starts from 40℃ and ends at 100℃ with a step of 5℃ to obtain different temperatures. Test the saturation current and the first wavelength value at different temperatures.

[0074] Step 2: Package the chip into a To component, set the oven ambient temperature to 100°C, the starting drive current to 80mA, the ending drive current to 250mA, the drive current step to 20mA, and test the second wavelength value under different drive currents.

[0075] Step 3: Draw the first fitting curve with the statistical values ​​of step 1, and draw the second fitting curve with the statistical values ​​of step 2. The intersection point corresponds to a target current value of 180mA.

[0076] Step 4: According to steps 1-3, the extreme aging condition is obtained under the oven environment temperature of 100℃, and the target current value is 180mA. Therefore, the preset aging time is 12H, the preset extended aging time is 24H, the high temperature working life test time is 2000H, 20mA is the preset step size, and different test drive currents are set to 180mA, 160mA, 140mA, 120mA, 100mA, and 80mA, and 6 experimental groups are formulated.

[0077]

[0078]

[0079] Combined with the data, 100℃ / 120~140mA is the optimal aging condition for this product.

[0080] The present invention provides a method, device and equipment for determining the optimal aging condition of a semiconductor laser. First, a semiconductor laser chip to be tested is obtained, and the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power are tested based on the threshold current of the semiconductor laser chip to be tested; then, the semiconductor laser chip to be tested is packaged into a component, and the second wavelength value of the component under different driving currents at a preset fixed ambient temperature is tested; next, the limit aging current at the preset fixed ambient temperature is determined based on the first wavelength value, the second wavelength value, the saturation current and the driving current; finally, an aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain the optimal aging condition. Through the technical solution of the present invention, since the junction temperature of the chip is the same when the wavelength value of the chip is the same, in order to eliminate the interference caused by the junction temperature of the chip, the wavelength value of the chip under different conditions is the same as the goal, and this condition is obtained. The aging test is performed according to this condition, which is the optimal aging condition. In order to improve the efficiency of determining this condition, the control variable method is used to set different conditions as different conditions 1 and 2. Condition 1: only the temperature changes, and condition 2: only the drive current changes at a preset fixed ambient temperature. In this way, when the wavelength is the same, the only target current, that is, the limit aging current, can be determined at the preset fixed ambient temperature. This effectively eliminates the interference caused by the change in chip junction temperature due to the application of the drive current, and effectively improves the accuracy of determining the optimal aging conditions of the semiconductor laser.

[0081] Further, as Figure 1 and Figure 2 The specific implementation of the method shown in the figure, the embodiment of the present invention provides a device for determining the optimal aging condition of a semiconductor laser, such as Figure 3 As shown, the device includes: a first test module 31, a second test module 32, a determination module 33, and a test module 34;

[0082] A first test module 31 is used to obtain a semiconductor laser chip to be tested, and test the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power based on the threshold current of the semiconductor laser chip to be tested;

[0083] The second test module 32 is used to package the semiconductor laser chip to be tested into a component, and test the second wavelength value of the component under different driving currents at a preset fixed ambient temperature;

[0084] A determination module 33, configured to determine a limit aging current at the preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current and the drive current;

[0085] The test module 34 is used to perform an aging test based on the preset fixed ambient temperature and the limit aging current to obtain an optimal aging condition.

[0086] Correspondingly, in order to determine the limit aging current at the preset fixed ambient temperature based on the first wavelength value, the second wavelength value, the saturation current and the driving current, the determination module 33 can be specifically used to determine the target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the driving current, and use the target current as the limit aging current at the preset fixed ambient temperature.

[0087] Correspondingly, in order to determine the target current when the first wavelength value is equal to the second wavelength value, and the saturation current is equal to the drive current, the determination module 33 can also be used to construct a first fitting curve of the first wavelength value and the saturation current; construct a second fitting curve of the second wavelength value and the drive current; fit the point where the first fitting curve intersects the second fitting curve to obtain the target current when the first wavelength value is equal to the second wavelength value, and the saturation current is equal to the drive current.

[0088] Accordingly, in order to perform an aging test based on the preset fixed ambient temperature and the limit aging current to obtain the optimal aging condition, the test module 34 can be specifically used to obtain a second preset number of chips to be tested for aging; obtain a preset step size, and based on the limit aging current, set different test drive currents according to the preset step size; obtain a preset aging time, a preset extended aging time, and a high-temperature working life test time, and perform an aging test on all the chips to be tested for aging based on the preset fixed ambient temperature and the test drive current at the preset aging time, the preset extended aging time, and the high-temperature working life test time, respectively, to obtain a first failure number, a newly added failure number, and a second failure number; determine the optimal aging condition according to the newly added failure number and the second failure number.

[0089] Accordingly, in order to obtain the semiconductor laser chip to be tested, the first wavelength value at different temperatures and the saturation current corresponding to the saturation light power are tested based on the threshold current of the semiconductor laser chip to be tested. The first test module 31 can be specifically used to obtain a first preset number of semiconductor laser chips to be tested; the sum of the threshold current of the semiconductor laser chip to be tested and the preset current is calculated to obtain an initial spectrum value, and under the initial spectrum value, the first initial wavelength value of each semiconductor laser chip to be tested at different temperatures and the initial saturation current corresponding to the saturation light power are tested; the average of the first initial wavelength value is calculated to obtain the first wavelength value; the average of the initial saturation current is calculated to obtain the saturation current.

[0090] Accordingly, in order to package the semiconductor laser chip to be tested into a component and test the second wavelength value of the component under a preset fixed ambient temperature and different driving currents, the second testing module 32 can be specifically used to package one semiconductor laser chip to be tested into a component and test the second initial wavelength value of each component under a preset fixed ambient temperature and different driving currents; and calculate the average of the second initial wavelength values ​​to obtain the second wavelength value.

[0091] In specific application scenarios, such as Figure 4 As shown, a device for determining the optimal aging condition of a semiconductor laser, the device also includes: a setting module 35, which is specifically used to set the starting driving current, the ending driving current and the driving current step to obtain different driving currents.

[0092] It should be noted that for other corresponding descriptions of the functional units involved in the device for determining the optimal aging condition of a semiconductor laser provided in this embodiment, reference can be made to Figure 1 to Figure 2 The corresponding description will not be repeated here.

[0093] Based on the above Figure 1 to Figure 2 The method shown in the embodiment, accordingly, also provides a storage medium, which can be volatile or non-volatile, and stores a computer program, which is executed by a processor to implement the above-mentioned Figure 1 to Figure 2 The method for determining the optimal aging conditions of semiconductor lasers is shown.

[0094] Based on this understanding, the technical solution of the present invention can be embodied in the form of a software product, which can be stored in a storage medium (which can be a CD-ROM, a USB flash drive, a mobile hard disk, etc.), and includes a number of instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods of various implementation scenarios of the present invention.

[0095] Based on the above Figure 1 to Figure 2 The method shown and Figure 3 , Figure 4 In order to achieve the above-mentioned purpose, the present embodiment further provides a computer device, which includes a storage medium and a processor; the storage medium is used to store a computer program; the processor is used to execute the computer program to achieve the above-mentioned Figure 1 to Figure 2 The method for determining the optimal aging conditions of semiconductor lasers is shown.

[0096] Optionally, the computer device may further include a user interface, a network interface, a camera, a radio frequency (RF) circuit, a sensor, an audio circuit, a WI-FI module, etc. The user interface may include a display, an input unit such as a keyboard, etc., and the optional user interface may also include a USB interface, a card reader interface, etc. The network interface may optionally include a standard wired interface, a wireless interface (such as a WI-FI interface), etc.

[0097] Those skilled in the art will appreciate that the computer device structure provided in this embodiment does not constitute a limitation on the physical device, and may include more or fewer components, or a combination of certain components, or different component arrangements.

[0098] The storage medium may also include an operating network communication module. The operating is a program that manages the hardware and software resources of the above-mentioned computer device, supporting the operation of the information processing program and other software and / or programs. The network communication module is used to communicate between the components inside the storage medium, and to communicate with other hardware and software in the information processing entity device.

[0099] Through the description of the above implementation modes, those skilled in the art can clearly understand that the present invention can be implemented by means of software plus a necessary general hardware platform, or by hardware.

[0100] The present invention provides a method, device and equipment for determining the optimal aging condition of a semiconductor laser. First, a semiconductor laser chip to be tested is obtained, and the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power are tested based on the threshold current of the semiconductor laser chip to be tested; then, the semiconductor laser chip to be tested is packaged into a component, and the second wavelength value of the component under different driving currents at a preset fixed ambient temperature is tested; next, the limit aging current at the preset fixed ambient temperature is determined based on the first wavelength value, the second wavelength value, the saturation current and the driving current; finally, an aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain the optimal aging condition. Through the technical solution of the present invention, since the junction temperature of the chip is the same when the wavelength value of the chip is the same, in order to eliminate the interference caused by the junction temperature of the chip, the wavelength value of the chip under different conditions is the same as the goal, and this condition is obtained. The aging test is performed according to this condition, which is the optimal aging condition. In order to improve the efficiency of determining this condition, the control variable method is used to set different conditions as different conditions 1 and 2. Condition 1: only the temperature changes, and condition 2: only the drive current changes at a preset fixed ambient temperature. In this way, when the wavelength is the same, the only target current, that is, the limit aging current, can be determined at the preset fixed ambient temperature. This effectively eliminates the interference caused by the change in chip junction temperature due to the application of the drive current, and effectively improves the accuracy of determining the optimal aging conditions of the semiconductor laser.

[0101] Those skilled in the art will appreciate that the accompanying drawings are only schematic diagrams of a preferred implementation scenario, and the modules or processes in the accompanying drawings are not necessarily necessary for implementing the present invention. Those skilled in the art will appreciate that the modules in the devices in the implementation scenario can be distributed in the devices of the implementation scenario according to the description of the implementation scenario, or can be changed accordingly and located in one or more devices different from the present implementation scenario. The modules of the above-mentioned implementation scenario can be combined into one module, or can be further split into multiple submodules.

[0102] The above serial numbers of the present invention are only for description and do not represent the advantages and disadvantages of the implementation scenarios. The above disclosure is only a few specific implementation scenarios of the present invention, but the present invention is not limited thereto, and any changes that can be thought of by those skilled in the art should fall within the protection scope of the present invention.

Claims

1. A method for determining the optimal aging condition of a semiconductor laser, characterized in that: The method comprises: Acquire a semiconductor laser chip to be tested, and test the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power based on the threshold current of the semiconductor laser chip to be tested; The semiconductor laser chip to be tested is packaged into a component, and the second wavelength value of the component is tested under different driving currents at a preset fixed ambient temperature; Determine the limit aging current at the preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current and the driving current; An aging test is performed based on the preset fixed ambient temperature and the limit aging current to obtain an optimal aging condition.

2. The method according to claim 1, characterized in that: The determining the limit aging current at the preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current and the driving current includes: Determine a target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the drive current, and use the target current as the limit aging current under the preset fixed ambient temperature.

3. The method according to claim 2, characterized in that The determining the target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the driving current includes: Constructing a first fitting curve between the first wavelength value and the saturation current; Constructing a second fitting curve between the second wavelength value and the driving current; The point where the first fitting curve intersects with the second fitting curve is fitted to obtain a target current when the first wavelength value is equal to the second wavelength value and the saturation current is equal to the drive current.

4. The method according to claim 1, characterized in that The performing of an aging test based on the preset fixed ambient temperature and the limiting aging current to obtain an optimal aging condition includes: Obtaining a second preset number of chips to be tested for aging; Obtaining a preset step size, and setting different test drive currents according to the preset step size based on the limit aging current; Obtaining a preset aging time, a preset extended aging time, and a high-temperature working life test time, and performing an aging test on all the chips to be tested for aging based on the preset fixed ambient temperature and the test drive current at the preset aging time, the preset extended aging time, and the high-temperature working life test time, respectively, to obtain a first failure number, a newly added failure number, and a second failure number; An optimal aging condition is determined according to the number of newly added failures and the second number of failures.

5. The method according to claim 1, characterized in that The step of obtaining a semiconductor laser chip to be tested and testing the first wavelength value at different temperatures and the saturation current corresponding to the saturation optical power based on the threshold current of the semiconductor laser chip to be tested comprises: Acquire a first preset number of semiconductor laser chips to be tested; Calculating the sum of the threshold current and the preset current of the semiconductor laser chip to be tested to obtain an initial spectrum value, and testing the first initial wavelength value and the initial saturation current corresponding to the saturation optical power of each semiconductor laser chip to be tested at different temperatures under the initial spectrum value; Calculating an average of the first initial wavelength values ​​to obtain a first wavelength value; The average of the initial saturation currents is calculated to obtain the saturation current.

6. The method according to claim 1, characterized in that The step of packaging the semiconductor laser chip to be tested into a component and testing the second wavelength value of the component under different driving currents at a preset fixed ambient temperature comprises: Packing one of the semiconductor laser chips to be tested into a component, and testing the second initial wavelength value of each component under a preset fixed ambient temperature and different driving currents; The average of the second initial wavelength values ​​is calculated to obtain a second wavelength value.

7. The method according to claim 1, characterized in that Before testing the second wavelength value of the component at a preset fixed ambient temperature and different driving currents, the method further includes: Set the starting drive current, ending drive current and drive current step to obtain different drive currents.

8. A device for determining the optimal aging condition of a semiconductor laser, characterized in that: The device comprises: A first test module is used to obtain a semiconductor laser chip to be tested, and test a first wavelength value at different temperatures and a saturation current corresponding to a saturation optical power based on a threshold current of the semiconductor laser chip to be tested; A second testing module is used to package the semiconductor laser chip to be tested into a component, and test the second wavelength value of the component under different driving currents at a preset fixed ambient temperature; A determination module, configured to determine a limit aging current at a preset fixed ambient temperature according to the first wavelength value, the second wavelength value, the saturation current, and the drive current; The test module is used to perform an aging test based on the preset fixed ambient temperature and the limit aging current to obtain an optimal aging condition.

9. A storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for determining the optimal aging condition of a semiconductor laser according to any one of claims 1 to 7 is implemented.

10. A computer device comprising a storage medium, a processor, and a computer program stored in the storage medium and executable on the processor, characterized in that: When the processor executes the computer program, the method for determining the optimal aging condition of the semiconductor laser according to any one of claims 1 to 7 is implemented.

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