Line width adjusting method and conductive material

Abstract

The invention belongs to the technical field of semiconductor manufacturing, and relates to a line width adjusting method and a conductive material. The method comprises the following steps: processing a first substrate to obtain a first circuit pattern; performing measurement processing on the first circuit pattern to obtain a first line width distribution diagram; line width uniformity inspection is carried out on the first line width distribution diagram, if the line width uniformity does not meet a preset range, a cyclic process is executed until preset conditions are met, and the cyclic process comprises the steps that regional adjustment is carried out on the height of the nozzle; processing a second base material according to the adjusted height of the nozzle to obtain a second circuit pattern; performing measurement processing on the second line pattern to obtain a second line width distribution diagram; and performing the line width uniformity test on the second line width distribution diagram. The etching effects of different areas are accurately controlled, so that the line width of the circuit of the conductive material is uniform and consistent, and the manufacturing of a high-precision electronic device is facilitated.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor manufacturing technology, and specifically relates to a line width adjustment method and a conductive material. Background Art

[0002] In the wet process of traditional yellow light processing (such as line development or etching), the "pool effect" often occurs. This effect causes the line width of the edge of the conductive material to be generally narrower than the line width of the center of the material, thus affecting the uniformity of the line width on the entire material. This uneven line width distribution will cause the thick line area to appear darker, while the thin line area will appear lighter. The overall appearance may have color differences and shadows, thus affecting the aesthetics of the material. This problem is particularly prominent in the manufacturing process of transparent electrodes. The uneven line width will cause differences in the resistance values ​​of different areas of the material, which will adversely affect the performance stability of the final device. Summary of the invention

[0003] The embodiments of the present application provide a line width adjustment method and a conductive material, which can solve the problem of uneven line width of circuits caused by the pool effect in the wet process, so as to accurately adjust the etching degree of different areas.

[0004] In a first aspect, an embodiment of the present application provides a line width adjustment method, which is applied to an etching machine, wherein the etching machine includes a nozzle, and the method includes: processing a first substrate to obtain a first circuit pattern; measuring the first circuit pattern to obtain a first line width distribution diagram; performing a line width uniformity test on the first line width distribution diagram, and if the line width uniformity does not meet a preset range, executing a cycle process until a preset condition is met, the cycle process includes: regionally adjusting the height of the nozzle; according to the adjusted height of the nozzle, performing the processing on a second substrate to obtain a second circuit pattern; measuring the second circuit pattern to obtain a second line width distribution diagram; performing the line width uniformity test on the second line width distribution diagram; wherein the preset condition is that the line width uniformity meets the preset range, and the first substrate and the second substrate are substrates of the same type.

[0005] In some embodiments, the processing of the first substrate to obtain a first circuit pattern includes: uniformly coating a photoresist on the surface of the first substrate, and stabilizing the photoresist on the surface of the first substrate through a pre-drying treatment; exposing the surface of the first substrate through a photomask to form a pattern; developing the surface of the first substrate after exposure to reveal the pattern; and sequentially etching and stripping the surface of the first substrate after development to obtain the first circuit pattern.

[0006] In some embodiments, the measuring and processing of the first line pattern to obtain a first line width distribution diagram includes: taking the edge and middle area of ​​the first line pattern as target measurement areas; performing multi-point measurement on the target measurement area to obtain line width data for each point; and analyzing and processing the line width data of each point to obtain the first line width distribution diagram.

[0007] In some embodiments, the line width uniformity test on the first line width distribution diagram includes: performing range calculation based on the first line width distribution diagram to obtain the range; performing average line width calculation based on the first line width distribution diagram to obtain the average line width; performing standard deviation calculation based on the average line width and the first line width distribution diagram to obtain the standard deviation; comparing the standard deviation and the range with the preset range to determine whether the standard deviation and the range meet the preset range.

[0008] In some embodiments, the preset range includes: the standard deviation is less than 5% to 10% of the preset line width, and the range is less than 10% to 15% of the preset line width.

[0009] In some embodiments, the nozzle includes a plurality of nozzles, and the plurality of nozzles are arranged in a square position distribution. The regional adjustment of the height of the nozzle includes: fixing the middle nozzle of the nozzle, and dividing the nozzles arranged in a square position distribution into a plurality of regions based on the position of the middle nozzle; moving the nozzles at a corresponding position of each region upward along the Z-axis direction by a first preset distance; or moving the nozzles at a corresponding position of each region downward along the Z-axis direction by a second preset distance.

[0010] In some embodiments, the range corresponding to the first preset distance is: 5cm≤S1≤7cm; wherein S1 is the first preset distance.

[0011] In some embodiments, the range corresponding to the second preset distance is: 2cm≤S2≤4cm; wherein S2 is the second preset distance.

[0012] In a second aspect, an embodiment of the present application provides a conductive material, wherein the conductive material is obtained by the line width adjustment method described in the first aspect.

[0013] In an embodiment of the present application, a first circuit pattern is obtained by processing a first substrate; a first line width distribution diagram is obtained by measuring the first line pattern; a line width uniformity test is performed on the first line width distribution diagram, and if the line width uniformity does not meet the preset range, a cycle process is performed until a preset condition is met, and the cycle process includes: regional adjustment of the height of the nozzle; according to the adjusted height of the nozzle, the second substrate is processed to obtain a second circuit pattern; the second line pattern is measured to obtain a second line width distribution diagram; and the second line width distribution diagram is tested for line width uniformity. During the wet process, the height of the nozzle in different areas is repeatedly adjusted, so that the etching liquid sprayed from the nozzle is evenly distributed during the entire etching process, and the etching effect in different areas is also ensured to be consistent with the middle area. By accurately controlling the etching effect in different areas, the line width of the conductive material circuit is uniform, which is conducive to the production of high-precision electronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a flow chart of a line width adjustment method provided in an embodiment of the present application;

[0015] Figure 2 It is a flowchart of the processing provided by the embodiment of the present application;

[0016] Figure 3 It is a flow chart of the measurement process provided in the embodiment of the present application. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be described clearly and in detail in combination with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0018] The technical features involved in the various embodiments of the present application described below do not conflict with each other and can be combined with each other.

[0019] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of the same type, and the number of objects is not limited. For example, the first object can be one or more.

[0020] In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the previously and subsequently associated objects are in an "or" relationship.

[0021] See also Figure 1 , Figure 1 1 is a flow chart of a line width adjustment method provided in an embodiment of the present application. Figure 1 As shown, the method is applied to an etching machine, the etching machine includes a nozzle, and the method includes steps S101-S103:

[0022] S101: Processing a first substrate to obtain a first circuit pattern.

[0023] First, select the type of the first substrate, for example, the first substrate can be PET, PI, FR4, COP, CPI, glass, silicon substrate, etc., and ensure that its surface is clean and dust-free. The first substrate is usually covered with a conductive layer (such as copper, silver, gold, graphene, ITO or an organic conductive layer).

[0024] See also Figure 2 , Figure 2 This is a flowchart of the processing provided by the embodiment of the present application. Figure 2 As shown, the first substrate is processed to obtain a first circuit pattern, including steps S1011-S1014:

[0025] S1011: uniformly coating the photoresist on the surface of the first substrate, and stabilizing the photoresist on the surface of the first substrate through a pre-drying treatment.

[0026] When coating the surface of the first substrate, different coating methods can be selected. It is understandable that if a liquid photoresist, such as photoresist (photosensitive adhesive), is used, the photosensitive adhesive is evenly coated on the surface of the first substrate by spin coating. Among them, the speed and time of spin coating need to be adjusted according to the viscosity of the photoresist and the target film thickness; if a dry film photoresist, such as a photosensitive film, is used, it is applied to the surface of the first substrate. The coating temperature is usually controlled between 80-120°C, so that the photosensitive film can be evenly attached to the substrate without bubbles or defects.

[0027] The coated first substrate is pre-dried to remove the solvent in the photoresist and solidify the film layer. The temperature is generally controlled between 80-120°C, and the specific time depends on the film thickness and material properties.

[0028] S1012: Expose the surface of the first substrate through a photomask to form a pattern.

[0029] Place the first substrate coated with the photosensitive film or photosensitive glue on the exposure machine and align the photomask with the pattern on the first substrate. The exposure energy is set according to the selected photosensitive material, generally at 20mj / cm 2 ~1000mj / cm 2 During exposure, the ultraviolet light will irradiate the photosensitive material on the first substrate through the transparent part of the photomask, causing chemical changes in these areas.

[0030] After exposure, post-baking is performed, which can help the photosensitive material to further solidify and improve the resolution and stability of the pattern. The temperature and time also need to be adjusted according to the material.

[0031] S1013: performing a development process on the surface of the first substrate after exposure to reveal the pattern.

[0032] The exposed first substrate is placed in a developer, usually an alkaline solution (such as NaOH or KOH solution), which will dissolve the unexposed or insufficiently cured photosensitive material. The development time is generally 5s to 5min, and the development temperature is controlled between 10℃ and 60℃. After development, only the exposed and cured pattern remains on the surface of the first substrate.

[0033] S1014: performing etching treatment and film stripping treatment on the surface of the first substrate after the development treatment in sequence to obtain the first circuit pattern.

[0034] After development is completed, the first substrate is placed in an etching solution. The etching solution will etch away the conductive layer that is not protected by the photosensitive material, leaving behind the exposed pattern portion. Commonly used etching solutions are acidic or alkaline solutions, depending on the properties of the conductive material (first substrate). Etching time and temperature need to be controlled according to the choice of conductive material and etching solution.

[0035] After etching is completed, a stripper or organic solvent is used to remove the remaining photosensitive material. This process is usually carried out at a relatively low temperature (10°C to 60°C) and the time is between 5s and 5min. After stripping, the final conductive pattern, i.e. the first circuit pattern, will appear on the substrate.

[0036] Additionally, the first substrate is washed to remove any residual chemicals and then dried, ensuring that the first substrate surface is clean and ready for subsequent processing or application.

[0037] S102: measuring and processing the first line pattern to obtain a first line width distribution diagram.

[0038] See also Figure 3 , Figure 3 is a flow chart of the measurement process provided by the embodiment of the present application. Figure 3As shown, the first line pattern is measured and processed to obtain a first line width distribution diagram, including steps S1021-S1023:

[0039] S1021: taking the edge and middle area of ​​the first line pattern as target measurement areas.

[0040] First, before the measurement process is carried out, select the appropriate measurement equipment. For example, the measurement equipment can be an optical microscope: used for preliminary observation of the line morphology and rough measurement; a scanning electron microscope (SEM): used for high-resolution measurement, suitable for micron-level or even nanometer-level line measurement; a laser thickness gauge: used for non-contact measurement, suitable for large-area, high-precision line width measurement; an automatic optical inspection instrument (AOI): can automatically scan the entire piece of material to detect the line width and uniformity of the line.

[0041] Secondly, in order to accurately evaluate the line width uniformity of the first circuit pattern, multiple measurement points need to be selected. The measurement points are usually distributed in: the center of the material: to understand the line width of the central area; the edge of the material: to evaluate the line width changes in the edge area; the four corners of the material: to check the line width of the corner area to ensure that there are no abnormalities; the middle area of ​​the material: these areas are the transition areas between the center and the edge, which can help understand the trend of line width changes. It should be noted that this application does not limit the selection of the target measurement area, as long as it complies with the process manufacturing process. In addition, depending on the size and complexity of the material, 10 to dozens of measurement points are usually selected to obtain statistically significant line width data.

[0042] S1022: Perform multi-point measurement on the target measurement area to obtain line width data of each point.

[0043] First, use the measuring equipment to accurately locate each measuring point and adjust the focus or parameters to obtain a clear image; second, at each measuring point, use the measuring function of the measuring equipment to directly measure the width of the line. Usually multiple measurements are taken and the average is taken to reduce accidental errors. Finally, the line width data of each measuring point is recorded, and the position of each point is noted.

[0044] S1023: Analyze and process the line width data of each point to obtain the first line width distribution diagram.

[0045] According to the line width data obtained in step S1022, it is recorded in a table, and the measurement position (edge ​​or middle) and the corresponding line width value are marked, so as to obtain a first line width distribution diagram. In this case, multiple measurements are required to ensure the repeatability and reliability of the data.

[0046] S103: Performing a line width uniformity test on the first line width distribution diagram. If the line width uniformity does not meet a preset range, executing a loop process until a preset condition is met, the loop process includes: regionally adjusting the height of the nozzle; performing the processing on the second substrate according to the adjusted height of the nozzle to obtain a second circuit pattern; performing the measurement process on the second circuit pattern to obtain a second line width distribution diagram; performing the line width uniformity test on the second line width distribution diagram; wherein the preset condition is that the line width uniformity meets the preset range, and the first substrate and the second substrate are substrates of the same type.

[0047] First, performing a line width uniformity test on the first line width distribution diagram includes:

[0048] According to the first line width distribution diagram, performing range calculation to obtain the range;

[0049] Calculating the average line width according to the first line width distribution diagram to obtain the average line width;

[0050] Calculating a standard deviation according to the average line width and the first line width distribution graph to obtain a standard deviation;

[0051] The standard deviation and the range are compared with the preset range to determine whether the standard deviation and the range meet the preset range.

[0052] It can be understood that, according to the first line width distribution diagram, the range is calculated to obtain the range. The range calculation formula is as follows:

[0053] R=W max -W min ;

[0054] The range R is the difference between the maximum and minimum values ​​of the line width, indicating the range of the line width distribution. If the range R is small, it means that the line width does not change much between the measurement points and the uniformity is good.

[0055] According to the first line width distribution diagram, an average line width calculation is performed to obtain an average line width. The average line width calculation formula is as follows:

[0056]

[0057] in, is the average line width, w i is the line width of the ith measurement point, and N is the total number of measurement points.

[0058] The standard deviation is calculated based on the average line width and the first line width distribution diagram to obtain the standard deviation. The standard deviation calculation formula is as follows:

[0059]

[0060] Among them, the standard deviation σ reflects the degree of dispersion of the line width, and the smaller the value, the more uniform the line width.

[0061] The standard deviation and the range are compared with the preset range to determine whether the standard deviation and the range meet the preset range. The preset range includes: the standard deviation is less than 5% to 10% of the preset line width, and the range is less than 10% to 15% of the preset line width. It can be understood that the preset line width is the width of the wire or electrode in the circuit pattern during the design stage of the integrated circuit or microelectronic device, which is called the preset line width, and is the ideal size that the photolithography process hopes to achieve. For example, if the preset line width is 1μm, the allowable standard deviation is usually between 0.05μm and 0.1μm. It should be noted that for higher precision applications, such as advanced integrated circuit manufacturing, the standard deviation requirements may be more stringent, generally requiring less than 3% to 5% of the preset line width. For another example, assuming that the preset line width is 1μm, the range should generally be controlled within 0.1μm to 0.15μm. It should be noted that in some processes with high precision requirements, the range may be required to be between 5% and 10%.

[0062] Secondly, the nozzle comprises a plurality of nozzles, and the plurality of nozzles are arranged in a square position distribution, and the regional adjustment of the height of the nozzle comprises: fixing the middle nozzle of the nozzle, and dividing the nozzles arranged in a square position distribution into a plurality of areas based on the position of the middle nozzle; moving the nozzles at the corresponding position of each area upward along the Z-axis direction by a first preset distance; or moving the nozzles at the corresponding position of each area downward along the Z-axis direction by a second preset distance.

[0063] It is understood that the central nozzle of the nozzle distribution is selected as the reference nozzle to ensure that its position and height remain unchanged. The height and position of this nozzle will be used as a reference point for adjusting the height of other nozzles. According to the square distribution of the nozzles, the nozzle area is divided into multiple sub-areas. The division of these areas can be a square grid, each sub-area containing one or more nozzles. This division method allows separate height adjustments for different areas to achieve the desired etching effect. For areas where the etching intensity needs to be reduced (such as edge areas), the nozzles in these areas are moved upward along the Z-axis direction, and the moving distance is the first preset distance (S1), which ranges from 5cm to 7cm. Moving the nozzle upward can increase the distance between the nozzle and the substrate, reduce the impact force of the liquid, and thus reduce the etching ability. This can avoid excessive etching in the edge area and help maintain the uniformity of the line width. For areas where the etching intensity needs to be increased (such as the middle area), the nozzles in these areas are moved downward along the Z-axis direction, and the moving distance is the second preset distance (S2), which ranges from 2cm to 4cm. Wherein, Z represents the vertical movement of the nozzle in three-dimensional space. In a three-dimensional coordinate system, there are usually three axes: X-axis: horizontal axis, usually indicating the left-right direction; Y-axis: horizontal axis perpendicular to the X-axis, usually indicating the front-back direction; Z-axis: axis perpendicular to the X-axis and Y-axis, usually indicating the up-down direction. Moving the nozzle downward can shorten the distance between the nozzle and the substrate, increase the impact force of the liquid, and thus increase the etching ability. This ensures that the etching intensity in the middle area is consistent with the edge area.

[0064] It should be noted that, regarding the range setting of the first preset distance, the larger nozzle height adjustment distance (5cm to 7cm) is mainly used to reduce the impact force of the nozzle on the substrate. This is because at a higher nozzle position, the flow rate and impact force of the developer or etching solution will be reduced, thereby reducing the etching effect on the substrate, which helps to maintain the uniformity of the line width, especially in the edge area where excessive etching is prone to occur. In addition, the etching depth can be reduced to avoid the thinning of the line width in the edge area, thereby improving the overall quality of the final pattern. Regarding the range setting of the second preset distance, the smaller nozzle height adjustment distance (2cm to 4cm) is mainly used to increase the impact force of the nozzle on the substrate. The smaller distance will cause the developer or etching solution to be sprayed more concentratedly on the substrate, increase the etching intensity, and ensure that the etching intensity in the middle area is consistent with the edge area, thereby forming a uniform etching effect on the entire substrate. By controlling the nozzle height, the etching effect in the middle area can be accurately adjusted to ensure the accuracy and consistency of the pattern. Finally, regarding the setting of fixing the middle nozzle as the reference, it can also be based on the nozzles in other areas, which is not limited here.

[0065] The working principle of the line width adjustment method provided in the embodiment of the present application is as follows:

[0066] First, the first substrate is processed, i.e., coated, exposed, developed, etched, and stripped to obtain a first circuit pattern. Secondly, after obtaining the first circuit pattern, it is measured and processed to obtain a first line width distribution diagram. Thirdly, according to the first line width distribution diagram, a line width uniformity test is performed. If the line width uniformity meets the preset range, it indicates that there is no need to adjust the nozzle regionally, and the product can be directly mass-produced; if the line width uniformity does not meet the preset range, it indicates that the nozzle needs to be adjusted regionally, and the following cycle process is performed until the preset conditions are met, and the cycle process includes: regional adjustment of the height of the nozzle (for details, please see the above description of regional adjustment). It can be understood that the nozzle corresponding to the edge area where the line width is different is adjusted, and the edge line width is thinner, which proves that the edge etching ability is stronger. The nozzle at the edge is moved upward to increase its distance from the material, reduce the impact of the liquid on the material, and thus reduce its etching ability. After adjustment, the second substrate is processed according to the adjusted height of the nozzle to obtain a second circuit pattern. It can be understood that the first substrate and the second substrate are the same type of substrate, that is, the material remaining after the photosensitive film is taken and exposed, and is placed in the adjusted wet process equipment for development, etching, and film stripping, and the parameters are consistent with the first test sample. Then, the second circuit pattern is measured according to the measurement process described above to obtain a second line width distribution diagram. Again, the line width uniformity test is performed on the second line width distribution diagram to determine whether the line width uniformity meets the preset range. Among them, the preset range includes: the standard deviation is less than 5% to 10% of the preset line width, and the range is less than 10% to 15% of the preset line width. It can be understood that after the line width measurement of the substrate after each processing, a line width uniformity test is required. If the preset conditions are met, it indicates that there is no need to adjust the nozzle regionally, and the product can be directly mass-produced; if the line width uniformity does not meet the preset range, it indicates that the nozzle needs to be adjusted regionally, and the above cycle process is continued until the preset conditions are met.

[0067] The embodiment of the present application adjusts the etching capacity of different areas by precisely adjusting the height of the nozzles in different areas, thereby reducing the impact of uneven line width caused by the pool effect. The etching capacity of different areas can be precisely adjusted, which is beneficial to industrial manufacturing.

[0068] The embodiment of the present application further provides a conductive material, which is obtained by the line width adjustment method described above.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them. Under the concept of the present invention, the technical features in the above embodiments or different embodiments may also be combined, the steps may be implemented in any order, and there are many other changes in different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they may still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A line width adjustment method, applied to an etching machine, wherein the etching machine comprises a nozzle, characterized in that: The method comprises: Processing the first substrate to obtain a first circuit pattern; Performing measurement processing on the first line pattern to obtain a first line width distribution diagram; Performing a line width uniformity test on the first line width distribution diagram, if the line width uniformity does not meet a preset range, executing a loop process until a preset condition is met, the loop process includes: Performing regional adjustment on the height of the nozzle; According to the adjusted height of the nozzle, the second substrate is processed to obtain a second circuit pattern; Performing the measurement process on the second line pattern to obtain a second line width distribution diagram; Performing the line width uniformity test on the second line width distribution diagram; Wherein, the preset condition is that the line width uniformity satisfies the preset range, and the first substrate and the second substrate are substrates of the same type.

2. The line width adjustment method according to claim 1, characterized in that: The processing of the first substrate to obtain the first circuit pattern comprises: Uniformly coating the photoresist on the surface of the first substrate, and stabilizing the photoresist on the surface of the first substrate by pre-baking treatment; Expose the surface of the first substrate through a photomask to form a pattern; Performing a development process on the surface of the first substrate after exposure to reveal the pattern; The surface of the first substrate after the development treatment is sequentially subjected to etching treatment and film stripping treatment to obtain the first circuit pattern.

3. The line width adjustment method according to claim 1, characterized in that: The measuring and processing the first line pattern to obtain a first line width distribution diagram includes: Using the edge and middle area of ​​the first line pattern as the target measurement area; Perform multi-point measurement on the target measurement area to obtain line width data of each point; The line width data of each point is analyzed and processed to obtain the first line width distribution diagram.

4. The line width adjustment method according to claim 1, characterized in that: The performing a line width uniformity test on the first line width distribution diagram comprises: According to the first line width distribution diagram, performing range calculation to obtain the range; Calculating the average line width according to the first line width distribution diagram to obtain the average line width; Calculating a standard deviation according to the average line width and the first line width distribution graph to obtain a standard deviation; The standard deviation and the range are compared with the preset range to determine whether the standard deviation and the range meet the preset range.

5. The line width adjustment method according to claim 4, characterized in that: The preset range includes: the standard deviation is less than 5% to 10% of the preset line width, and the range is less than 10% to 15% of the preset line width.

6. The line width adjustment method according to claim 1, characterized in that: The nozzles include a plurality of nozzles, and the plurality of nozzles are arranged in a square position distribution, and the regional adjustment of the height of the nozzles includes: Fixing the middle nozzle of the nozzles, and dividing the nozzles arranged in a square position distribution into a plurality of areas based on the position of the middle nozzle; The nozzles at the corresponding positions of the nozzles in each area are moved upwards by a first preset distance along the Z-axis direction; or, the nozzles at the corresponding positions of the nozzles in each area are moved downwards by a second preset distance along the Z-axis direction.

7. The line width adjustment method according to claim 6, characterized in that: The range corresponding to the first preset distance is: 5cm≤S1≤7cm; Wherein, S1 is the first preset distance.

8. The line width adjustment method according to claim 6, characterized in that: The range corresponding to the second preset distance is: 2cm≤S2≤4cm; Wherein, S2 is the second preset distance.

9. A conductive material, characterized in that: The conductive material is obtained by the line width adjustment method as described in any one of claims 1 to 8.

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