Trench gate RC-IGBT device structure

Abstract

The invention discloses a trench gate RC-IGBT device structure, and relates to the technical field of semiconductor devices. According to the trench gate RC-IGBT device structure, a trench gate and field stop layer structure is adopted in the IGBT substrate, the surface channel density is increased, the near-surface carrier concentration is improved, the chip area is reduced, meanwhile, the operating power of the chip is ensured, integrated packaging of the IGBT substrate, the power chip and the driving chip is achieved through a frame European DBC composite structure, and the reliability of the device is improved. The use effect is ensured, electromagnetic interference is effectively prevented, false triggering is prevented, and the operation stability of the chip is further ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to a trench gate RC-IGBT device structure. Background Art

[0002] IGBT, which stands for Insulated Gate Bipolar Transistor in Chinese, is a bipolar device and one of the most widely used power devices today, especially in the medium and high power fields. Referring to the Chinese patent, the announcement number is "CN212365970U", "A Trench RC-IGBT Device Structure", which points out that due to structural limitations, the existing RC-IGBT device cannot optimize the FRD device problem alone without affecting the IGBT performance; however, this method still has the problem that the package is susceptible to electromagnetic interference and has poor operating stability. In response to this, we propose a trench gate RC-IGBT device structure to solve the above problems. Summary of the invention

[0003] In view of the deficiencies in the prior art, the present invention provides a trench gate RC-IGBT device structure, which solves the problems raised in the above background technology.

[0004] To achieve the above objectives, the present invention is implemented through the following technical solutions: a trench gate RC-IGBT device structure, including a DBC substrate, a ceramic substrate is fixedly mounted on the top surface of the DBC substrate, an IGBT substrate and a fast recovery diode are arranged inside the ceramic substrate, and the IGBT substrate and the fast recovery diode are fixedly connected to the DBC substrate; An organic substrate is fixedly installed inside the DBC substrate, a thick aluminum wire is fixedly installed inside the DBC substrate, one end of the thick aluminum wire is connected to the organic substrate, multiple copper lead frames are arranged on both sides of the DBC substrate, one end of the thick aluminum wire away from the organic substrate is connected to the copper lead frame, and the IGBT substrate and the fast recovery diode are both connected to the thick aluminum wire.

[0005] Preferably, a driving chip is fixedly mounted on the bottom of the organic substrate, and a gold wire is fixedly mounted on the outer side of the driving chip.

[0006] Preferably, an injection molded body is filled between the organic substrate and the ceramic substrate, and the injection molded body is formed by injection molding of epoxy resin material.

[0007] Preferably, the side surface of the organic substrate is connected to a corresponding copper lead frame.

[0008] Preferably, the outer side of the ceramic substrate is connected to a corresponding copper lead frame.

[0009] Preferably, a plurality of connection terminals are fixedly mounted on the top surface of the DBC substrate.

[0010] Preferably, a plurality of assembly holes are provided inside the DBC substrate, and positioning screws are provided inside each of the assembly holes, and the positioning screws are used to assemble the DBC substrate to a preset position.

[0011] Preferably, an insulating rubber ring is provided inside the assembly hole, the positioning screw passes through the corresponding insulating rubber ring and is slidably connected thereto, an annular cavity is provided inside the insulating rubber ring and a plurality of through holes are provided on the top surface, so that during the assembly of the DBC substrate, as the positioning screw applies pressure, the insulating rubber ring can be compressed and deformed, and the gas inside the annular cavity can be squeezed out through the plurality of through holes, a bottom positioning sheet is fixedly installed at the end of the insulating rubber ring, and a plurality of anti-slip protrusions are fixedly installed below the bottom positioning sheet.

[0012] Preferably, a plurality of support members are fixedly installed inside the annular cavity, the interiors of the support members are slidably connected with inner sliding rods, the inner sliding rods are fixedly connected to the inner wall of the annular cavity, and a spring body is fixedly installed between the end of the inner sliding rod and the interior of the support member.

[0013] Preferably, a positioning end head is fixedly mounted on the end of the support member, and the positioning end head is fixedly connected to the inner wall of the annular cavity.

[0014] The present invention provides a trench gate RC-IGBT device structure. Compared with the prior art, it has the following beneficial effects: (1) The trench gate RC-IGBT device structure adopts a trench gate plus a field stop layer structure inside the IGBT substrate, which increases the surface channel density, improves the near-surface carrier concentration, and reduces the chip area while ensuring the operating power of the chip. Through the frame-European-space DBC composite structure, the integrated packaging of the IGBT substrate, power chip and driver chip is realized, which ensures the use effect while effectively preventing electromagnetic interference and false triggering, further ensuring the operating stability of the chip.

[0015] (2) The trench gate RC-IGBT device structure, through the setting of the insulating rubber ring, can squeeze the gas inside the annular cavity through multiple through holes through the compression deformation of the insulating rubber ring after the DBC substrate is assembled, and form support through the inner sliding rod and the support member. On the one hand, it can ensure the assembly stability of the DBC substrate, and at the same time avoid the normal operation of the DBC substrate being affected by impact, thereby improving the protection performance and heat dissipation effect of the DBC substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the structure of the DBC substrate of the present invention; Figure 2 This is a schematic cross-sectional structure diagram of a DBC substrate of the present invention; Figure 3 For the present invention Figure 2 The enlarged structural diagram at A in the middle; Figure 4 For the present invention Figure 2 The enlarged structural diagram at B in the middle; Figure 5 This is a schematic diagram of the cross-sectional structure of the insulating rubber ring of the present invention; Figure 6 This is a schematic diagram of the cross-sectional structure of the insulating rubber ring of the present invention; Figure 7 It is a schematic diagram of the IGBT substrate structure of the present invention.

[0017] In the figure: 1. DBC substrate; 101. Assembly hole; 2. Positioning screw; 3. Insulating rubber ring; 301. Through hole; 302. Annular cavity; 4. Support member; 401. Inner slide rod; 402. Positioning terminal; 5. Bottom positioning sheet; 501. Anti-slip bump; 6. Connecting terminal; 7. Ceramic substrate; 8. IGBT substrate; 9. Fast recovery diode; 10. Copper lead frame; 11. Organic substrate; 12. Gold wire; 13. Thick aluminum wire; 14. Driver chip. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] See also Figure 1-Figure 7 The present invention provides two technical solutions, which specifically include the following embodiments: Example

[0020] In an embodiment of the present invention, a trench gate RC-IGBT device structure includes a DBC substrate 1, a ceramic substrate 7 is fixedly mounted on the top surface of the DBC substrate 1, an IGBT substrate 8 and a fast recovery diode 9 are arranged inside the ceramic substrate 7, and the IGBT substrate 8 and the fast recovery diode 9 are both fixedly connected to the DBC substrate 1; In the embodiment of the present invention, an organic substrate 11 is fixedly installed inside the DBC substrate 1, a thick aluminum wire 13 is fixedly installed inside the DBC substrate 1, one end of the thick aluminum wire 13 is connected to the organic substrate 11, a plurality of copper lead frames 10 are arranged on both sides of the DBC substrate 1, one end of the thick aluminum wire 13 away from the organic substrate 11 is connected to the copper lead frame 10, and the IGBT substrate 8 and the fast recovery diode 9 are both connected to the thick aluminum wire 13; In the embodiment of the present invention, reference Figure 7A trench gate is provided inside the IGBT substrate 8. By adopting a trench gate plus a field stop layer structure, the trench gate eliminates the JFET effect, increases the surface channel density, improves the near-surface carrier concentration, and achieves low Vcesat. The chip cell size is reduced from 6um to 1.6um, and the power density is increased from about 100A / cm2 to about 250A / cm2. The IGBT chip area is reduced by more than 40%; In the embodiments of the present invention, the "JFET effect" mentioned above refers to the phenomenon that the width of the pn junction inside the junction field effect transistor is controlled by applying an external electric field, thereby controlling the conductive performance of the junction field effect transistor. In the embodiment of the present invention, a driving chip 14 is fixedly mounted on the bottom of the organic substrate 11, and a gold wire 12 is fixedly mounted on the outer side of the driving chip 14; In the embodiment of the present invention, an injection molded body is filled between the organic substrate 11 and the ceramic substrate 7, and the injection molded body is formed by injection molding of epoxy resin material; In the embodiment of the present invention, specifically, the internal frame structure of the DBC substrate 1 and the frame and DBC composite structure are used to realize the integrated packaging of the power chip and the driver chip 14, and the current can be not less than 30A under the unified packaging structure, and at least 2 types of product compatible designs can be realized; In the embodiment of the present invention, specifically, the internal frame structure of the DBC substrate 1 is formed by injection molding of insulating materials. Before integrated packaging, the DBC composite structure frame is first preset according to the size of the chip, and then the chip packaging process is completed uniformly; In the embodiment of the present invention, specifically, the stray parameters of the internal loop, frame and bonding wire of the DBC substrate 1 are calculated by the boundary element algorithm, a coupling model of the low-voltage loop and the high-voltage loop is established, and the electromagnetic interference of the driver chip 14 and the power chip is analyzed to prevent false triggering; In the embodiment of the present invention, specifically, through mold flow analysis and three-dimensional bonding wire, path optimization design is used to reduce the impact of the injection plastic fluid on the fine wire during the injection molding process, and reduce the product failure problem caused by wire collision and other problems; In the embodiment of the present invention, the side of the organic substrate 11 is connected to the corresponding copper lead frame 10; the outer side of the ceramic substrate 7 is connected to the corresponding copper lead frame 10; a plurality of connection terminals 6 are fixedly mounted on the top surface of the DBC substrate 1; In the embodiment of the present invention, a plurality of assembly holes 101 are provided inside the DBC substrate 1 , and positioning screws 2 are provided inside each of the assembly holes 101 . The positioning screws 2 are used to assemble the DBC substrate 1 to a preset position.

[0021] Embodiment 2: Based on embodiment 1, a trench gate RC-IGBT device structure includes a DBC substrate 1, a ceramic substrate 7 is fixedly mounted on the top surface of the DBC substrate 1, an IGBT substrate 8 and a fast recovery diode 9 are arranged inside the ceramic substrate 7, and the IGBT substrate 8 and the fast recovery diode 9 are both fixedly connected to the DBC substrate 1; In the embodiment of the present invention, an organic substrate 11 is fixedly installed inside the DBC substrate 1, a thick aluminum wire 13 is fixedly installed inside the DBC substrate 1, one end of the thick aluminum wire 13 is connected to the organic substrate 11, a plurality of copper lead frames 10 are arranged on both sides of the DBC substrate 1, one end of the thick aluminum wire 13 away from the organic substrate 11 is connected to the copper lead frame 10, and the IGBT substrate 8 and the fast recovery diode 9 are both connected to the thick aluminum wire 13; In the embodiment of the present invention, reference Figure 7 A trench gate is provided inside the IGBT substrate 8. By adopting a trench gate plus a field stop layer structure, the trench gate eliminates the JFET effect, increases the surface channel density, improves the near-surface carrier concentration, and achieves low Vcesat. The chip cell size is reduced from 6um to 1.6um, and the power density is increased from about 100A / cm2 to about 250A / cm2. The IGBT chip area is reduced by more than 40%; In the embodiments of the present invention, the "JFET effect" mentioned above refers to the phenomenon that the width of the pn junction inside the junction field effect transistor is controlled by applying an external electric field, thereby controlling the conductive performance of the junction field effect transistor. In the embodiment of the present invention, a driving chip 14 is fixedly mounted on the bottom of the organic substrate 11, and a gold wire 12 is fixedly mounted on the outer side of the driving chip 14; In the embodiment of the present invention, an injection molded body is filled between the organic substrate 11 and the ceramic substrate 7, and the injection molded body is formed by injection molding of epoxy resin material; In the embodiment of the present invention, specifically, the internal frame structure of the DBC substrate 1 and the frame and DBC composite structure are used to realize the integrated packaging of the power chip and the driver chip 14, and the current can be not less than 30A under the unified packaging structure, and at least 2 types of product compatible designs can be realized; In the embodiment of the present invention, specifically, the internal frame structure of the DBC substrate 1 is formed by injection molding of insulating materials. Before integrated packaging, the DBC composite structure frame is first preset according to the size of the chip, and then the chip packaging process is completed uniformly; In the embodiment of the present invention, specifically, the stray parameters of the internal loop, frame and bonding wire of the DBC substrate 1 are calculated by the boundary element algorithm, a coupling model of the low-voltage loop and the high-voltage loop is established, and the electromagnetic interference of the driver chip 14 and the power chip is analyzed to prevent false triggering; In the embodiment of the present invention, specifically, through mold flow analysis and three-dimensional bonding wire, path optimization design is used to reduce the impact of the injection plastic fluid on the fine wire during the injection molding process, and reduce the product failure problem caused by wire collision and other problems; In the embodiment of the present invention, the side of the organic substrate 11 is connected to the corresponding copper lead frame 10; the outer side of the ceramic substrate 7 is connected to the corresponding copper lead frame 10; a plurality of connection terminals 6 are fixedly mounted on the top surface of the DBC substrate 1; In the embodiment of the present invention, a plurality of assembly holes 101 are provided inside the DBC substrate 1, and positioning screws 2 are provided inside the assembly holes 101. The positioning screws 2 are used to assemble the DBC substrate 1 to a preset position. In the embodiment of the present invention, an insulating rubber ring 3 is provided inside the assembly hole 101, and a positioning screw 2 passes through the corresponding insulating rubber ring 3 and is slidably connected thereto. An annular cavity 302 is provided inside the insulating rubber ring 3 and a plurality of through holes 301 are provided on the top surface, so that during the assembly of the DBC substrate 1, as the positioning screw 2 applies pressure, the insulating rubber ring 3 can be deformed under pressure, and the gas inside the annular cavity 302 can be squeezed out through the plurality of through holes 301. A bottom positioning sheet 5 is fixedly installed at the end of the insulating rubber ring 3, and a plurality of anti-slip protrusions 501 are fixedly installed below the bottom positioning sheet 5; In the embodiment of the present invention, a plurality of support members 4 are fixedly installed inside the annular cavity 302, and the interior of each support member 4 is slidably connected with an inner slide bar 401, the inner slide bar 401 is fixedly connected to the inner wall of the annular cavity 302, and a spring body is fixedly installed between the end of the inner slide bar 401 and the interior of the support member 4; In the embodiment of the present invention, a positioning end 402 is fixedly installed at the end of the support member 4, and the positioning end 402 is fixedly connected to the inner wall of the annular cavity 302; Specifically, when assembling the DBC substrate 1, as the positioning screw 2 is turned, the insulating rubber ring 3 can be compressed and deformed, and the gas inside the annular cavity 302 is squeezed out through the multiple through holes 301, while the inner slide rod 401 and the support member 4 are squeezed, so that the inner slide rod 401 is retracted into the support member 4, and the spring body is squeezed. On the one hand, the assembly stability of the DBC substrate 1 can be ensured, and at the same time, the normal operation of the DBC substrate 1 can be prevented from being affected by impact, etc., thereby improving the protection performance and heat dissipation effect of the DBC substrate 1.

[0022] Meanwhile, the contents not described in detail in this specification belong to the prior art known to those skilled in the art.

[0023] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the present invention.

Claims

1. A trench gate RC-IGBT device structure, comprising a DBC substrate (1), characterized in that: A ceramic substrate (7) is fixedly mounted on the top surface of the DBC substrate (1); an IGBT substrate (8) and a fast recovery diode (9) are provided on the inner side of the ceramic substrate (7); and the IGBT substrate (8) and the fast recovery diode (9) are both fixedly connected to the DBC substrate (1); An organic substrate (11) is fixedly mounted inside the DBC substrate (1), a thick aluminum wire (13) is fixedly mounted inside the DBC substrate (1), one end of the thick aluminum wire (13) is connected to the organic substrate (11), a plurality of copper lead frames (10) are provided on both sides of the DBC substrate (1), one end of the thick aluminum wire (13) away from the organic substrate (11) is connected to the copper lead frame (10), and the IGBT substrate (8) and the fast recovery diode (9) are both connected to the thick aluminum wire (13).

2. A trench gate RC-IGBT device structure according to claim 1, characterized in that: A driving chip (14) is fixedly mounted on the bottom of the organic substrate (11), and a gold wire (12) is fixedly mounted on the outer side of the driving chip (14).

3. A trench gate RC-IGBT device structure according to claim 1, characterized in that: An injection molded body is filled between the organic substrate (11) and the ceramic substrate (7), and the injection molded body is formed by injection molding of epoxy resin material.

4. A trench gate RC-IGBT device structure according to claim 1, characterized in that: The side surface of the organic substrate (11) is connected to the corresponding copper lead frame (10).

5. The trench gate RC-IGBT device structure according to claim 1, characterized in that: The outer side of the ceramic substrate (7) is connected to a corresponding copper lead frame (10).

6. The trench gate RC-IGBT device structure according to claim 1, characterized in that: A plurality of connection terminals (6) are fixedly mounted on the top surface of the DBC substrate (1).

7. The trench gate RC-IGBT device structure according to claim 1, characterized in that: A plurality of assembly holes (101) are provided inside the DBC substrate (1), and positioning screws (2) are provided inside each of the assembly holes (101). The positioning screws (2) are used to assemble the DBC substrate (1) to a preset position.

8. A trench gate RC-IGBT device structure according to claim 7, characterized in that: An insulating rubber ring (3) is provided inside the assembly hole (101); the positioning screw (2) penetrates the corresponding insulating rubber ring (3) and is slidably connected thereto; an annular cavity (302) is provided inside the insulating rubber ring (3) and a plurality of through holes (301) are provided on the top surface thereof, so that during the process of assembling the DBC substrate (1), as the positioning screw (2) applies pressure, the insulating rubber ring (3) is deformed under pressure, and the gas inside the annular cavity (302) is squeezed out through the plurality of through holes (301); a bottom positioning sheet (5) is fixedly mounted on the end of the insulating rubber ring (3); and a plurality of anti-slip protrusions (501) are fixedly mounted below the bottom positioning sheet (5).

9. A trench gate RC-IGBT device structure according to claim 8, characterized in that: A plurality of support members (4) are fixedly installed inside the annular cavity (302), and an inner sliding rod (401) is slidably connected inside each of the support members (4). The inner sliding rod (401) is fixedly connected to the inner wall of the annular cavity (302), and a spring body is fixedly installed between the end of the inner sliding rod (401) and the inside of the support member (4).

10. A trench gate RC-IGBT device structure according to claim 9, characterized in that: A positioning end head (402) is fixedly mounted on the end of the support member (4), and the positioning end head (402) is fixedly connected to the inner wall of the annular cavity (302).

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