Image sensor and processing method

Abstract

The invention provides an image sensor and a processing method, the image sensor comprises a plurality of pixels, each pixel comprises an optical filter, a first electrode layer, a first transmission layer, a photosensitive layer, a second transmission layer and a second electrode layer, and the optical filter, the first electrode layer, the first transmission layer, the photosensitive layer, the second transmission layer and the second electrode layer are sequentially stacked and arranged; the photosensitive layer is made of lead sulfide quantum dots and can receive light rays absorbed by the optical filter and generate photon-generated carriers; the photosensitive layers of the plurality of pixels are integrally connected. Due to the fact that the migration rate of the lead sulfide quantum dots is low, photon-generated carriers generated by the photosensitive layer are not prone to diffusion in the direction perpendicular to the arrangement direction of all the layers, and the crosstalk phenomenon is reduced. According to the image sensor and the processing method provided by the embodiment of the invention, the photosensitive layer of each pixel does not need to be independently processed, the manufacturing process of the photosensitive layer is further simplified, and the processing cost is effectively reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of photoelectric sensors, and in particular to image sensors and processing methods thereof. Background Art

[0002] In the related art, the photosensitive area array of the image sensor includes pixels for capturing light; the photosensitive layers of each pixel of the existing image sensor are separated from each other, so that the photogenerated carriers generated by the photosensitive layer of each pixel will not diffuse into the photosensitive layer of another pixel, reducing crosstalk and thus avoiding the reduction of image resolution. However, in order to produce the above-mentioned image sensor, it is necessary to physically divide an entire photosensitive chip into a photosensitive layer of a pixel, or to manufacture the photosensitive layer of each pixel one by one, and the production process is relatively complicated. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides an image sensor that can reduce the crosstalk phenomenon while simplifying the manufacturing process of the photosensitive layer to reduce the processing cost.

[0004] The present invention also provides an image sensor processing method for processing the above image sensor.

[0005] An image sensor according to an embodiment of a first aspect of the present invention includes:

[0006] A plurality of pixels, wherein the pixels include a color filter, a first electrode layer, a first transmission layer, a photosensitive layer, a second transmission layer, and a second electrode layer, wherein the color filter, the first electrode layer, the first transmission layer, the photosensitive layer, the second transmission layer, and the second electrode layer are sequentially stacked and arranged; the photosensitive layer is made of lead sulfide quantum dots and is capable of receiving light absorbed by the color filter and generating photogenerated carriers;

[0007] The photosensitive layers of the plurality of pixels are integrally connected.

[0008] The image sensor according to the embodiment of the present invention has at least the following beneficial effects: due to the low mobility of lead sulfide quantum dots, the photogenerated carriers generated by the photosensitive layer are not easy to diffuse in the direction perpendicular to the arrangement of the layers, thereby reducing the crosstalk phenomenon; the image sensor of the present invention does not need to separately process the photosensitive layer of each pixel, further simplifying the manufacturing process of the photosensitive layer and effectively reducing the processing cost.

[0009] According to some embodiments of the present invention, the pixel further comprises a first passivation layer, the first passivation layer being located between the first transmission layer and the photosensitive layer and being used to reduce lateral diffusion of photogenerated carriers;

[0010] And / or, the pixel further includes a second passivation layer, which is located between the second transmission layer and the photosensitive layer and is used to reduce lateral diffusion of photogenerated carriers.

[0011] According to some embodiments of the present invention, the first electrode layer is a transparent ITO electrode, the first transport layer is a hole transport layer, the second transport layer is an electron transport layer, and the second electrode layer is a metal electrode.

[0012] According to some embodiments of the present invention, the first electrode layers of a plurality of the pixels are connected as a whole; the first transmission layers of a plurality of the pixels are connected as a whole; and the second transmission layers of a plurality of the pixels are connected as a whole.

[0013] According to some embodiments of the present invention, four pixels are defined as a pixel array, and the four filters of the pixel array are used to transmit red light, green light, blue light and infrared light, respectively.

[0014] According to some embodiments of the present invention, the arrangement direction of the filter, the first electrode layer, the first transmission layer, the photosensitive layer, the second transmission layer and the second electrode layer is defined as a first direction, and the four pixels in each pixel array are arranged along a second direction and / or a third direction, and the first direction, the second direction and the third direction are perpendicular to each other.

[0015] An image sensor processing method according to a second aspect of the present invention is used to process the image sensor described in any one of the above embodiments, comprising the following steps:

[0016] preparing the second transport layer on the second electrode layer;

[0017] The photosensitive layer is prepared on the second transmission layer, and the photosensitive layers in a plurality of the pixels are integrally formed at the same time;

[0018] preparing the first transmission layer on the photosensitive layer;

[0019] preparing the first electrode layer on the first transmission layer;

[0020] The filter is arranged on the first electrode layer.

[0021] The image sensor processing method according to the embodiment of the present invention has at least the following beneficial effects: when preparing the photosensitive layer, the photosensitive layers of multiple pixels are integrally formed, which can effectively simplify the production of the photosensitive layer of each pixel and effectively reduce the processing cost.

[0022] According to some embodiments of the present invention, the photosensitive layers in a plurality of pixels are simultaneously integrally formed by multiple spin coating annealing processes.

[0023] According to some embodiments of the present invention, the first transport layer is prepared by magnetron sputtering or spin coating; and / or the second transport layer is prepared by magnetron sputtering or spin coating.

[0024] According to some embodiments of the present invention, the color filter is manufactured on the first electrode layer using a color filter array process.

[0025] According to some embodiments of the present invention, after preparing the second transmission layer, a second passivation layer is first prepared, and then the photosensitive layer is prepared on the second passivation layer, and the second passivation layer is used to reduce the lateral diffusion of photogenerated carriers; and / or, after preparing the photosensitive layer, a first passivation layer is first prepared, and then the first transmission layer is prepared on the first passivation layer, and the first passivation layer is used to reduce the lateral diffusion of photogenerated carriers.

[0026] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0028] Figure 1 A schematic diagram of the structure of an image sensor according to some embodiments of the present invention;

[0029] Figure 2 for Figure 1 Schematic diagram of a single pixel in ;

[0030] Figure 3 A schematic diagram of the structure of an image sensor according to some embodiments of the present invention;

[0031] Figure 4 for Figure 3 Schematic diagram of a single pixel in ;

[0032] Figure 5 Schematic diagram of arrangement of filters in some embodiments of the present invention;

[0033] Figure 6 for Figure 5 A partial enlarged view of .

[0034] Reference numerals:

[0035] Pixel array 10;

[0036] A first light filtering region 110, a first electrode region 120, a first transmission region 130, a photosensitive region 140, a second transmission region 150, a second electrode region 160, a first passivation region 170, and a second passivation region 180;

[0037] Pixels: 1000;

[0038] Filter 1100, first filter 1100a, second filter 1100b, third filter 1100c, fourth filter 1100d, first electrode layer 1200, first transmission layer 1300, photosensitive layer 1400, second transmission layer 1500, second electrode layer 1600, first passivation layer 1700, and second passivation layer 1800. DETAILED DESCRIPTION

[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0040] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0041] In the description of the present invention, "several" means more than one, "many" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0042] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0043] In the description of the present invention, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0044] Please refer to Figure 1 , Figure 2As shown, the present invention proposes an image sensor, including multiple pixels 1000, each pixel 1000 includes a filter 1100, a first electrode layer 1200, a first transmission layer 1300, a photosensitive layer 1400, a second transmission layer 1500 and a second electrode layer 1600, the filter 1100, the first electrode layer 1200, the first transmission layer 1300, the photosensitive layer 1400, the second transmission layer 1500 and the second electrode layer 1600 are stacked in sequence; the photosensitive layer 1400 is made of lead sulfide quantum dots, and can receive light absorbed by the filter 1100 and generate photogenerated carriers; the photosensitive layers 1400 of multiple pixels 1000 are connected as a whole.

[0045] In order to reduce the crosstalk phenomenon, the photosensitive layers 1400 of different pixels 1000 need to be physically separated. The existing technology usually physically divides an entire photosensitive chip into multiple photosensitive layers 1400 of pixels 1000, or manufactures the photosensitive layer 1400 of each pixel 1000 one by one, so that the different photosensitive layers 1400 of the image sensor are separated from each other. The manufacturing process is relatively complicated and the cost is high.

[0046] The photosensitive layer 1400 of the image sensor of the present invention is made of lead sulfide quantum dots. Since the mobility of lead sulfide quantum dots is low, when the photosensitive layer 1400 of each pixel 1000 is connected as a whole, the photogenerated carriers generated by the photosensitive layer 1400 are not easy to diffuse in the direction perpendicular to the arrangement of each layer, and the crosstalk phenomenon is reduced; the manufacturing process is simpler and the processing cost is lower.

[0047] For more information, see Figure 1 , Figure 2 As shown, the arrangement direction of the filter 1100, the first electrode layer 1200, the first transmission layer 1300, the photosensitive layer 1400, the second transmission layer 1500 and the second electrode layer 1600 is defined as a first direction (i.e., the downward direction in the figure). In some embodiments, the image sensor includes a first filter area 110, a first electrode area 120, a first transmission area 130, a photosensitive area 140, a second transmission area 150 and a second electrode area 160. The first filter area 110, the first electrode area 120, the first transmission area 130, the photosensitive area 140, the second transmission area 150 and the second electrode area 160 are stacked along the first direction, and the photosensitive area 140 is formed at one time through a process; the photosensitive layer 1400 of each pixel 1000 is a part of the photosensitive area 140. When the image sensor of the present invention is working, due to the use of lead sulfide quantum dots, the photogenerated carriers of each photosensitive layer 1400 are less likely to move perpendicularly to the first direction to the photosensitive layer 1400 of another pixel 1000, the second transmission layer 1500 or the second electrode layer 1600, and the crosstalk phenomenon is reduced.

[0048] Therefore, the image sensor of the present invention does not need to separately process the photosensitive layer 1400 of each pixel 1000, nor does it need to manufacture the photosensitive layer 1400 of each pixel 1000 one by one, and the resolution of the image sensor can be guaranteed; it further simplifies the manufacturing process of the photosensitive layer 1400, effectively reducing the processing cost.

[0049] For further information, please refer to Figure 1 , Figure 2 As shown, the first electrode layers 1200 of the plurality of pixels 1000 are connected as one; the first transmission layers 1300 of the plurality of pixels 1000 are connected as one; and the second transmission layers 1500 of the plurality of pixels 1000 are connected as one. The above solution does not increase the crosstalk phenomenon generated by the image sensor, and the manufacturing process does not need to manufacture the first electrode layer 1200, the first transmission layer 1300 and the second transmission layer 1500 of each pixel 1000 one by one, so the manufacturing process of the image sensor can be further simplified.

[0050] In some embodiments, the image sensor includes a first filter area 110, a first electrode area 120, a first transmission area 130, a photosensitive area 140, a second transmission area 150 and a second electrode area 160. The first electrode area 120 is formed by a one-time process, and the first electrode layer 1200 of each pixel 1000 is a part of the first electrode area 120; the first transmission area 130 is formed by a one-time process, and the first transmission layer 1300 of each pixel 1000 is a part of the first transmission area 130; the second transmission area 150 is formed by a one-time process, and the second transmission layer 1500 of each pixel 1000 is a part of the second transmission area 150.

[0051] The image sensor of the present invention absorbs light of different intensities through the filter 1100 to form a high-resolution image; in some embodiments, the filters 1100 of different pixels 1000 are respectively used to absorb light of different wavelength ranges, so that the image sensor can form a color image.

[0052] For further information, please refer to Figure 4 , Figure 5As shown, in some embodiments, four pixels 1000 are defined as a pixel array 10, and the four filters 1100 of the pixel array 10 are used to transmit red light, green light, blue light and infrared light respectively; illustratively, the first filter 1100a is used to absorb red light, the second filter 1100b is used to absorb green light, the third filter 1100c is used to absorb blue light, and the fourth filter 1100d is used to absorb infrared light. Since the detectable spectral range of lead sulfide quantum dots is larger, the longest detectable spectrum can reach 2000nm, and the spectral range of lead sulfide quantum dots can cover visible light and infrared light, when the pixel array 10 is provided with filters 1100 for transmitting visible light and infrared light, the photosensitive layer 1400 of the pixel array 10 can sense visible light and infrared light respectively, so that the image sensor can detect visible light and infrared light at the same time and generate corresponding signals.

[0053] It should be noted that the wavelength range of red light referred to in the present invention is 615-655nm, the wavelength range of green light is 535-565nm, the wavelength range of blue light is 435-465nm, and the wavelength range of infrared light is 1342.5-1357.5nm.

[0054] Without departing from the inventive concept of the present invention, in some embodiments, four pixels 1000 in a pixel array 10 may be arranged perpendicular to the first direction.

[0055] As a preferred option, please refer to Figure 4 , Figure 5 As shown, in some embodiments, four pixels 1000 in each pixel array 10 are arranged along the second direction and / or the third direction, and the first direction, the second direction, and the third direction are perpendicular to each other. The above scheme makes it easier for an image system integrated with the image sensor of the present invention to process the electrical signal output by the image sensor of the present invention, thereby enhancing the stability of image generation.

[0056] For further information, please refer to Figure 3 , Figure 4As shown, in some embodiments, the pixel 1000 further includes a first passivation layer 1700 and a second passivation layer 1800. The first passivation layer 1700 is located between the first transmission layer 1300 and the photosensitive layer 1400, and is used to reduce the lateral diffusion of photogenerated carriers; the second passivation layer 1800 is located between the second transmission layer 1500 and the photosensitive layer 1400, and is used to reduce the lateral diffusion of photogenerated carriers. The photosensitive layer 1400 is made of lead sulfide quantum dots, and the lead sulfide quantum dots are small in size and easily penetrate from the photosensitive layer 1400 to the first transmission layer 1300 or the second transmission layer 1500, forming a leakage channel, resulting in an increase in dark current, thereby affecting the resolution of the final imaging. By providing a passivation layer with poor conductivity to form a high barrier layer, the possibility of carriers drifting to the external circuit and being collected under the influence of the built-in electric field formed at the transmission interface between the photosensitive layer 1400 and the first transmission layer 1300 or between the photosensitive layer 1400 and the second transmission layer 1500 in the dark state can be reduced. The first passivation layer 1700 and the second passivation layer 1800 can not only cooperate with the photosensitive layer 1400 to further reduce the lateral diffusion of photogenerated carriers, but also hinder the lead sulfide quantum dots from penetrating into the transmission layer, thereby reducing dark current and improving quantum measurement rate, which helps to improve the imaging resolution of imaging devices in low light conditions.

[0057] It should be noted that, in order to enable the first passivation layer 1700 and the second passivation layer 1800 to reduce the lateral diffusion of photogenerated carriers, the first passivation layer 1700 and the second passivation layer 1800 may be a film with poor conductivity, for example, the material may be set to dense oxide, high molecular material, polymer, dielectric material, etc. On the other hand, those skilled in the art may select one of the first passivation layer 1700 and the second passivation layer 1800 according to actual processing conditions.

[0058] In some embodiments, please refer to Figure 3 As shown, the image sensor includes a first filter area 110, a first electrode area 120, a first transmission area 130, a first passivation area 170, a photosensitive area 140, a second passivation area 180, a second transmission area 150 and a second electrode area 160. The first passivation area 170 is formed by a one-time process, and the first passivation layer 1700 of each pixel 1000 is a part of the first passivation area 170; the second passivation area 180 is formed by a one-time process, and the second passivation layer 1800 of each pixel 1000 is a part of the second passivation area 180.

[0059] In order to enable the image sensor to detect light, in some embodiments, the first electrode layer 1200 is a metal layer, the first transmission layer 1300 is an electron transmission layer, the second transmission layer 1500 is a hole transmission layer, and the second electrode layer 1600 is a transparent conductive film.

[0060] As a preferred option, please refer to Figure 2As shown, on the basis of providing a first passivation layer 1700 or a second passivation layer 1800, usually, one of the first electrode layer 1200 or the second electrode layer 1600 is set as a metal electrode, such as silver, aluminum, etc., and the other is set as a transparent ITO (indium tin oxide) electrode, and the transmission layer (the first transmission layer 1300 or the second transmission layer 1500) close to the metal electrode side is mainly used to transmit electrons, and the transmission layer close to the transparent ITO electrode side is mainly used to transmit holes. When the transmission layer in contact with the metal electrode has a lower electron mobility, the lateral electrical crosstalk between the metal electrodes of different pixels 1000 can be further suppressed. Based on this, in some embodiments, the first electrode layer 1200 is a transparent ITO electrode, the first transmission layer 1300 is a hole transmission layer; the second transmission layer 1500 is an electron transmission layer; and the second electrode layer 1600 is a metal electrode. Setting the above-mentioned first electrode layer 1200, first transmission layer 1300, second transmission layer 1500, and second electrode layer 1600 in one of the first transmission layer 1300 or the second transmission layer 1500 can effectively further suppress the crosstalk phenomenon generated by the second electrode layer 1600; setting the passivation layer can improve the penetration effect between the photosensitive layer 1400 and the transmission layer, reduce the dark current in the image sensor, improve the resolution, and further reduce the crosstalk.

[0061] Please refer to Figure 1 As shown, the present invention further provides an image sensor processing method, which is used to process the image sensor of any of the above embodiments, comprising the following steps:

[0062] A second transmission layer 1500 is prepared on the second electrode layer 1600;

[0063] A photosensitive layer 1400 is prepared on the second transmission layer 1500, and the photosensitive layer 1400 in each pixel 1000 is integrally formed at the same time;

[0064] Preparing a first transmission layer 1300 on the photosensitive layer 1400;

[0065] Preparing a first electrode layer 1200 on the first transmission layer 1300;

[0066] The filter 1100 is disposed on the first electrode layer 1200 .

[0067] When preparing the photosensitive layer 1400 , the above method enables the photosensitive layers 1400 of multiple pixels 1000 to be integrally formed, which can effectively simplify the production of the photosensitive layer 1400 of each pixel 1000 and effectively reduce the processing cost.

[0068] As a preferred solution, multiple spin coating annealing methods are used to make the photosensitive layer 1400 in each pixel 1000 be formed in one piece at the same time. The above processing method can further enhance the uniformity and stability of the prepared photosensitive layer. Exemplarily, after the second transmission layer 1500 is prepared on the second electrode layer 1600, the combination formed by the second transmission layer 1500 and the second electrode layer 1600 is fixed to the center of the spin coating heating table, and lead sulfide quantum dots are added to the surface of the second transmission layer 1500, and then a uniform and flat lead sulfide quantum dot film is obtained by controlling the parameters such as the heating temperature, heating rate, and spin coating speed of the spin coating, and the lead sulfide quantum dot film is further annealed, and the combination of multiple photosensitive layers 1400 is finally obtained by controlling the annealing temperature and heating rate, so that the photosensitive layers 1400 of multiple pixels 1000 are formed in one piece.

[0069] As a preferred solution, the transport layer may be prepared by magnetron sputtering or spin coating. The preparation by magnetron sputtering or spin coating can further obtain a more uniform transport layer.

[0070] Furthermore, when preparing the filter 1100 of multiple pixels 1000 on the first electrode layer 1200, a color filter array process is adopted; the above scheme enables the image sensor to set a color filter array on the surface of the first electrode layer 1200 of multiple pixels 1000, without passing through the microlens group and the micro-light path, and it is not easy to form optical crosstalk, thereby further reducing the optical crosstalk phenomenon in the photosensitive layer 1400.

[0071] As a preferred option, please refer to Figure 3 , Figure 4 As shown, in some embodiments, after preparing the second transmission layer 1500, the second passivation layer 1800 is first prepared, and then the photosensitive layer 1400 is prepared on the second passivation layer 1800; in some embodiments, after preparing the photosensitive layer 1400, the first passivation layer 1700 is first prepared, and then the first transmission layer 1300 is prepared on the first passivation layer 1700. The passivation layer of the above scheme can cooperate with the photosensitive layer 1400 to further reduce the lateral diffusion of photogenerated carriers, and can also reduce dark current and improve quantum measurement rate, which is helpful to improve the imaging resolution of the imaging device in low light conditions.

[0072] When the first transmission layer 1300 to be prepared is a hole transmission layer, first preparing the first passivation layer 1700 on the photosensitive layer 1400 and then preparing the first transmission layer 1300 on the first passivation layer 1700 can avoid dissolving the photosensitive layer 1400 when preparing the first transmission layer 1300, thereby avoiding an increase in dark current and a decrease in resolution.

[0073] To facilitate understanding by those skilled in the art, a preferred processing method is provided below.

[0074] First, an array substrate is selected. The array substrate includes a second electrode layer 1600 of multiple pixels 1000. The multiple second electrode layers 1600 together form a second electrode region 160 of the image sensor. The array substrate can be made of common photosensitive elements such as TFT (Thin film transistor) and CMOS (Complementary Metal Oxide Semiconductor).

[0075] Secondly, a second transmission region 150 with an integrated structure is prepared on the second electrode region 160 by magnetron sputtering or spin coating, and different parts of the second transmission region 150 form the second transmission layers 1500 of different pixels 1000 .

[0076] Secondly, the second passivation region 180 is prepared on the second transmission region 150 by using evaporation, magnetron sputtering or spin coating, and different parts of the second passivation region 180 form the second passivation layer 1800 of different pixels 1000.

[0077] Secondly, multiple spin coating annealing methods are used on the second passivation area 180, and lead sulfide quantum dots are selected as the material to prepare the photosensitive area 140, and different parts of the photosensitive area 140 form photosensitive layers 1400 of different pixels 1000.

[0078] Secondly, the first passivation region 170 is prepared on the photosensitive layer 1400 by evaporation, magnetron sputtering or spin coating, and different parts of the first passivation region 170 form the first passivation layer 1700 of different pixels 1000.

[0079] Secondly, the first transmission region 130 is prepared on the first passivation region 170 by magnetron sputtering or spin coating, and different parts of the first transmission region 130 form the first transmission layers 1300 of different pixels 1000.

[0080] Secondly, the first electrode region 120 is prepared on the first transmission region 130 by magnetron sputtering or thermal evaporation, and different parts of the first electrode region 120 form the first electrode layers 1200 of different pixels 1000.

[0081] Finally, a plurality of filters 1100 are prepared on the first electrode region 120 by using a color filter array process.

[0082] The above scheme does not need to segment the second transmission layer 1500 , the second passivation layer 1800 , the photosensitive layer 1400 , the first passivation layer 1700 and the first transmission layer 1300 of the pixel 1000 according to the position of the pixel 1000 , which greatly simplifies the processing technology.

[0083] The embodiments of the present invention are described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the purpose of the present invention. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. An image sensor, characterized in that include: A plurality of pixels, wherein the pixels include a color filter, a first electrode layer, a first transmission layer, a photosensitive layer, a second transmission layer, and a second electrode layer, wherein the color filter, the first electrode layer, the first transmission layer, the photosensitive layer, the second transmission layer, and the second electrode layer are sequentially stacked and arranged; the photosensitive layer is made of lead sulfide quantum dots and is capable of receiving light absorbed by the color filter and generating photogenerated carriers; The photosensitive layers of the plurality of pixels are integrally connected.

2. The image sensor according to claim 1, characterized in that The pixel further includes a first passivation layer, which is located between the first transmission layer and the photosensitive layer and is used to reduce the lateral diffusion of photogenerated carriers; And / or, the pixel further includes a second passivation layer, which is located between the second transmission layer and the photosensitive layer and is used to reduce lateral diffusion of photogenerated carriers.

3. The image sensor according to claim 2, characterized in that The first electrode layer is a transparent ITO electrode, the first transport layer is a hole transport layer, the second transport layer is an electron transport layer, and the second electrode layer is a metal electrode.

4. The image sensor according to claim 1, characterized in that The first electrode layers of the plurality of pixels are connected as a whole; the first transmission layers of the plurality of pixels are connected as a whole; and the second transmission layers of the plurality of pixels are connected as a whole.

5. The image sensor according to claim 1, characterized in that The four pixels are defined as a pixel array, and the four filters of the pixel array are used to transmit red light, green light, blue light and infrared light respectively.

6. The image sensor according to claim 5, characterized in that The arrangement direction of the filter, the first electrode layer, the first transmission layer, the photosensitive layer, the second transmission layer and the second electrode layer is defined as a first direction, and the four pixels in each pixel array are arranged along a second direction and / or a third direction, and the first direction, the second direction and the third direction are perpendicular to each other.

7. An image sensor processing method, characterized in that: The method for processing the image sensor according to any one of claims 1 to 6 comprises the following steps: preparing the second transport layer on the second electrode layer; The photosensitive layer is prepared on the second transmission layer, and the photosensitive layers in a plurality of the pixels are integrally formed at the same time; preparing the first transmission layer on the photosensitive layer; preparing the first electrode layer on the first transmission layer; The filter is arranged on the first electrode layer.

8. The image sensor processing method according to claim 7, characterized in that: The photosensitive layers in a plurality of pixels are formed integrally at the same time by using a multiple number of spin coating annealing methods.

9. The image sensor processing method according to claim 7, characterized in that: The first transport layer is prepared by magnetron sputtering or spin coating; and / or the second transport layer is prepared by magnetron sputtering or spin coating.

10. The image sensor processing method according to claim 7, characterized in that: The color filter is prepared on the first electrode layer by using a color filter array process.

11. The image sensor processing method according to claim 7, characterized in that: After preparing the second transmission layer, first prepare a second passivation layer, and then prepare the photosensitive layer on the second passivation layer, wherein the second passivation layer is used to reduce the lateral diffusion of photogenerated carriers; And / or, after preparing the photosensitive layer, first prepare a first passivation layer, and then prepare the first transmission layer on the first passivation layer, wherein the first passivation layer is used to reduce lateral diffusion of photogenerated carriers.

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