Reaction chamber pretreatment method and semiconductor equipment
By pretreating the reaction chamber, adjusting the air pressure and plasma etching power, the dielectric window temperature reaches the target temperature and is cleaned, the problem of unevenness of silicon groove depth in the semiconductor field is solved, and the silicon etching process is realized Depth uniformity and temperature control, suitable for batch wafer processing.
Patent Information
- Application Number
- CN202411242491.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-05
- Publication Date
- 2025-01-17
AI Technical Summary
In the semiconductor field, the STI silicon etching process lacks a stop layer, making it difficult to maintain the uniformity of the silicon trough depth, especially during batch etching, the silicon trough depth of different batches of wafers is uneven, and the reaction chamber dielectric window is also present. The temperature change caused by the uncontrolled temperature device affects the uniformity of etching.
By pretreating the reaction chamber, adjusting the air pressure and plasma etching power, the dielectric window temperature reaches the target temperature, and cleaning is performed to ensure the uniformity of the silicon groove depth during the silicon etching process. The specific steps include adjusting the air pressure and power to heat the reaction chamber after the equipment is started until the target temperature is reached, and then performing preliminary and further cleaning to ensure the stability of the dielectric window temperature.
The stable control of the dielectric window temperature of the reaction chamber in semiconductor equipment is achieved, ensuring the uniformity of the silicon groove depth during silicon etching, reducing the risk of low yield, and is suitable for batch wafer processing.
Smart Images
Figure CN119320936A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a reaction chamber pretreatment method and semiconductor equipment. Background Art
[0002] In the semiconductor field, the STI (Shallow Trench Isolation) process is a process for making isolation regions between active regions of transistors on a substrate to ensure that the N-type and P-type doped regions can be completely isolated. Since STI silicon etching has no stop layer, the etching depth can only be controlled by etching time. Therefore, it is impossible to improve the uniformity of silicon trench depth at the device design end.
[0003] The solution provided by the related technology is to make improvements in semiconductor equipment to improve the uniformity of silicon etching, for example, by adjusting the transformer coupled capacitance tuning (TCCT) of the etching reaction chamber or adjusting the center ratio of the etching gas to control the uniformity of silicon etching, but the above method can only adjust the uniformity inside a wafer.
[0004] In this regard, when etching wafers in batches, it is easy to find it difficult to maintain the uniformity of the depth of the silicon grooves etched on different batches of wafers, such as the situation where the depth of the silicon grooves of the previous batch of wafers is shallower and the depth of the next batch is deeper. In addition, there is no temperature control device in the dielectric window of the reaction chamber, only a temperature detection device is provided. The heating of the reaction chamber during the etching process will cause the depth of the silicon grooves of different batches of wafers at different temperatures to be uneven. Therefore, for batch wafers, the depth uniformity of different wafers cannot be guaranteed. Summary of the invention
[0005] The present application provides a reaction chamber pretreatment method, which solves the problem of uneven silicon groove depth during wafer etching in the related art. The present solution can pretreat the reaction chamber so that the dielectric window temperature of the reaction chamber reaches the target temperature, and can further clean the reaction chamber, which helps to keep the silicon groove depth of the wafer uniform when etching in the reaction chamber.
[0006] In a first aspect, the present application provides a reaction chamber pretreatment method, which is applied to semiconductor equipment, and the method comprises:
[0007] After the device is started, when the reaction chamber is in an idle state, the gas pressure of the reaction chamber is adjusted to a first preset pressure and the plasma etching power is adjusted to a first preset power to heat the reaction chamber, and a first cleaning gas is introduced into the reaction chamber until the dielectric window temperature of the reaction chamber reaches a target temperature;
[0008] The gas pressure of the reaction chamber is adjusted to a second preset pressure and the plasma etching power of the reaction chamber is maintained, and the gas pressure of the reaction chamber is maintained for a first preset time, and a first cleaning gas and a protective gas are introduced into the reaction chamber during the first preset time, and the second preset pressure is greater than the first preset pressure;
[0009] After the first preset time period ends, the gas pressure in the reaction chamber is adjusted to a third preset pressure, and the plasma etching power is adjusted to the second preset power, and the gas pressure and plasma etching power in the reaction chamber are maintained for a second preset time period, and a second cleaning gas is introduced into the reaction chamber during the second preset time period, and the third preset pressure is lower than the first preset pressure, and the second preset power is lower than the first preset power.
[0010] In a second aspect, the present application further provides a semiconductor device, which uses the above-mentioned reaction chamber pretreatment method to pretreat the reaction chamber.
[0011] The present application scheme can improve the dielectric window temperature and clean the reaction chamber at the same time by pre-treating the reaction chamber, so that the dielectric window temperature of the reaction chamber reaches the target temperature, thereby providing a suitable dielectric window temperature for the silicon etching process on the wafer, so that the silicon groove depth of the etched wafer is stabilized within a normal range, which helps to maintain the uniformity of the silicon groove depth during the etching process. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Figure 1 A schematic diagram of the steps of a reaction chamber pretreatment method provided in one embodiment of the present application;
[0013] Figure 2 A schematic diagram of the relationship between dielectric window temperature and etching depth provided in this application;
[0014] Figure 3 A schematic diagram of steps for cleaning a reaction chamber provided in an embodiment of the present application;
[0015] Figure 4 A schematic diagram of the steps for re-cleaning a reaction chamber provided in an embodiment of the present application. DETAILED DESCRIPTION
[0016] The following is a further detailed description of the embodiments of the present application in conjunction with the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are only used to explain the embodiments of the present application, rather than to limit the embodiments of the present application. It should also be noted that, for ease of description, only the parts related to the embodiments of the present application rather than all structures are shown in the accompanying drawings, and those skilled in the art should be able to think of it after reading the specification of this application that as long as the technical features do not contradict each other, any combination of the technical features can constitute an optional implementation method.
[0017] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally a class, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally represents that the objects associated with each other are in an "or" relationship. In the description of the present application, "multiple" means two or more, and "several" means one or more.
[0018] The STI process is a process for making isolation areas between active areas of transistors on a substrate. It has no stop layer, and the etching depth is controlled only by etching time. In the related art, improvements are made on semiconductor equipment to improve the uniformity of silicon etching, such as adjusting the transformer coupling capacitor of the etching reaction chamber and adjusting the center ratio of the etching gas. However, the above methods can only adjust the etching depth of a wafer to meet the uniformity requirements. For batch wafers, it is difficult to maintain the uniformity of the depth of silicon grooves etched on different batches of wafers.
[0019] Moreover, during the STI silicon etching process, the dielectric window of the reaction chamber will gradually heat up during the etching process, resulting in the silicon groove depth of the first wafer etched in the same batch to be shallower, but as the temperature of the dielectric window increases, the silicon groove depth of subsequent wafers gradually increases; and when the temperature of the dielectric window finally stabilizes, the silicon groove depth of subsequent etching can finally stabilize within the normal range. Furthermore, for batch wafers, it is also difficult to maintain the uniformity of the silicon groove depth etched on wafers of different batches.
[0020] In this regard, the present application provides a reaction chamber pretreatment method, which can be applied to semiconductor devices, such as Figure 1 As shown, Figure 1 This is a schematic diagram of the steps of the reaction chamber pretreatment method provided in an embodiment of the present application. The semiconductor device can maintain the uniformity of the silicon groove depth by pretreatment of the reaction chamber thereon. The specific steps are as follows:
[0021] Step S110, after the equipment is started, when the reaction chamber is in an idle state, the gas pressure of the reaction chamber is adjusted to a first preset pressure and the plasma etching power is adjusted to a first preset power to heat the reaction chamber, and a first cleaning gas is introduced into the reaction chamber until the dielectric window temperature of the reaction chamber reaches the target temperature.
[0022] It is understandable that the object of pretreatment in this scheme is an empty reaction chamber, and there is no wafer in the reaction chamber, that is, the reaction chamber is in an idle state. Then the equipment is started, and the gas pressure of the reaction chamber is adjusted to the first preset pressure, and the plasma etching power of the reaction chamber is adjusted to the first preset power. In addition, the first cleaning gas is introduced into the reaction chamber to heat the reaction chamber so that the dielectric window temperature of the reaction chamber can reach the target temperature. The process endpoint can be captured by the temperature detection device set on the equipment, and the corresponding temperature information can be obtained to determine whether the target temperature is reached. It is conceivable that after the dielectric window temperature reaches the target temperature, the dielectric window temperature can be maintained at the target temperature by the corresponding constant temperature control when the wafer is subsequently placed for etching. In this regard, by using the first cleaning gas and plasma to heat the reaction chamber, the problem of low yield in the etching process caused by the dielectric window temperature being too low can be effectively avoided.
[0023] Step S120, adjusting the gas pressure of the reaction chamber to a second preset pressure and maintaining the plasma etching power of the reaction chamber, and maintaining the gas pressure of the reaction chamber for a first preset time, and introducing a first cleaning gas and a protective gas into the reaction chamber during the first preset time, the second preset pressure being greater than the first preset pressure.
[0024] Accordingly, the reaction chamber needs to be preliminarily cleaned, and the gas pressure of the reaction chamber needs to be adjusted. Specifically, the gas pressure of the reaction chamber is adjusted to a second preset pressure, and the plasma etching power of the reaction chamber is maintained, that is, the plasma etching power of the reaction chamber is the first preset power. The second preset pressure is greater than the first preset pressure, that is, when adjusting the parameters of the reaction chamber, the gas pressure is increased and the plasma etching power is maintained.
[0025] Furthermore, after completing the adjustment of the gas pressure in the reaction chamber, the gas pressure and plasma etching power in the reaction chamber are maintained for a first preset time period. In addition, during the first preset time period, a first cleaning gas and a protective gas are introduced into the reaction chamber. It can be imagined that the plasma etching power of the reaction chamber is maintained at the first preset power. After the gas pressure in the reaction chamber is adjusted to a second preset pressure, a cleaning process of a first preset time period is started. During this process, the gas pressure is maintained at the second preset pressure, the plasma etching power is maintained at the first preset power, and the first cleaning gas and the protective gas are continuously introduced during the cleaning process. That is, the cleaning process is carried out when the gas pressure in the reaction chamber is the second preset pressure and the plasma etching power in the reaction chamber is the first preset power.
[0026] Step S130, after the first preset time ends, the gas pressure of the reaction chamber is adjusted to a third preset pressure, the plasma etching power is adjusted to the second preset power, and the gas pressure and plasma etching power of the reaction chamber are maintained for a second preset time, and a second cleaning gas is introduced into the reaction chamber during the second preset time, the third preset pressure is lower than the first preset pressure, and the second preset power is lower than the first preset power.
[0027] After the first preset time period, the reaction chamber is further cleaned, and similarly, the gas pressure of the reaction chamber is adjusted, and the plasma etching power is also adjusted. Specifically, the gas pressure of the reaction chamber is adjusted to a third preset pressure, and the plasma etching power is adjusted to a second preset power, wherein the third preset pressure is less than the first preset pressure, and the second preset power is less than the first preset power. That is, when adjusting the parameters of the reaction chamber, both its gas pressure and plasma etching power are reduced.
[0028] Furthermore, after completing the adjustment of the gas pressure and the plasma etching power, the gas pressure and the plasma etching power in the reaction chamber are maintained for a second preset time period. In addition, during the second preset time period, a second cleaning gas is introduced into the reaction chamber. It can be imagined that after the gas pressure in the reaction chamber is adjusted to the third preset pressure and the plasma etching power is adjusted to the second preset power, a cleaning process of the second preset time period is started. During this process, the gas pressure is maintained at the third preset pressure, the plasma etching power is maintained at the second preset power, and the second cleaning gas is continuously introduced during the cleaning process, that is, the cleaning process is carried out when the gas pressure in the reaction chamber is the third preset pressure and the plasma etching power in the reaction chamber is the second preset power.
[0029] It can be seen from the above scheme that the semiconductor equipment can improve the dielectric window temperature and clean the reaction chamber by pre-treating the reaction chamber, so that the dielectric window temperature of the reaction chamber reaches the target temperature, thereby providing a suitable dielectric window temperature for the silicon etching process on the wafer, so that the silicon groove depth of the etched wafer is stabilized within a normal range, which helps to maintain the uniformity of the silicon groove depth during the etching process.
[0030] In one embodiment, during the pretreatment process, the reaction chamber is first heated, and accordingly, the gas pressure and plasma etching power in the reaction chamber are adjusted, specifically, the gas pressure of the reaction chamber is adjusted to a first preset pressure, and the plasma etching power of the reaction chamber is adjusted to a first preset power. When the gas pressure of the reaction chamber is adjusted to the first preset pressure and the plasma etching power is adjusted to the first preset power, a first cleaning gas with a first preset volume flow rate is introduced into the reaction chamber, and when the dielectric window temperature reaches the target temperature, the heating of the reaction chamber is stopped.
[0031] Among them, the first preset pressure is greater than or equal to 60mtorr and less than or equal to 72mtorr, the first cleaning gas is nitrogen trifluoride gas, the first preset volume flow rate is greater than or equal to 40sccm and less than or equal to 60sccm, and the target temperature is greater than or equal to 80°C and less than or equal to 100°C.
[0032] It can be understood that when the gas pressure is the first preset pressure and the plasma etching power is the first preset power, the reaction chamber is heated by plasma through the corresponding volume flow rate of nitrogen trifluoride gas (NF3), so that the dielectric window temperature of the reaction chamber can reach the target temperature, which helps to improve the uniformity of the silicon groove depth during the etching process.
[0033] It should be noted that, in some embodiments, the target temperature is 90°C. Figure 2 A schematic diagram of the relationship between the dielectric window temperature and the etching depth provided in the present application is shown in the figure, where the horizontal axis is the dielectric window temperature (unit: ° C), and the vertical axis is the etching depth (unit: nm). As the dielectric window temperature gradually increases, the etching depth gradually tends to stabilize within a certain range. For example, when the dielectric window temperature is in the range of [80, 100], the etching depth begins to stabilize. For this, 90°C can be selected as the target temperature. After the reaction chamber is heated to a dielectric window temperature of 90°C, the uniformity of the silicon groove depth when etching the wafer can be guaranteed.
[0034] Figure 3 A schematic diagram of steps for cleaning a reaction chamber provided in an embodiment of the present application. In one embodiment, during the pretreatment of the reaction chamber, the semiconductor device may heat the reaction chamber to a target temperature, and then perform preliminary cleaning and further cleaning of the reaction chamber. The specific steps of the first cleaning of the reaction chamber by the semiconductor device are as follows:
[0035] Step S210: increasing the gas pressure of the reaction chamber so that the gas pressure of the reaction chamber reaches a second preset pressure.
[0036] Step S220: maintaining the plasma etching power of the reaction chamber at a first preset power.
[0037] Step S230: introducing a first cleaning gas with a second preset volume flow rate and a shielding gas with a third preset volume flow rate into the reaction chamber within a first preset time period.
[0038] During the preliminary cleaning of the reaction chamber, it is necessary to adjust the gas pressure of the reaction chamber and maintain the plasma etching power. Since the second preset pressure is greater than the first preset pressure, accordingly, after heating the reaction chamber and making the dielectric window temperature reach the target temperature, the gas pressure of the reaction chamber is increased so that the gas pressure of the reaction chamber reaches the second preset pressure, and the plasma etching power of the reaction chamber is maintained at the first preset power.
[0039] It is understandable that, when the reaction chamber pressure is the second preset pressure and the plasma etching power of the reaction chamber is the first preset power, a cleaning process of the first preset duration is performed, and then the first cleaning gas of the second preset volume flow rate and the protective gas of the third preset volume flow rate are introduced into the reaction chamber within the first preset duration. Wherein, the first preset duration is greater than or equal to 40s and less than or equal to 50s, the first cleaning gas is nitrogen trifluoride gas (NF3), the second preset volume flow rate is greater than or equal to 400sccm and less than or equal to 600sccm, the protective gas is helium (He), and the third preset volume flow rate is greater than or equal to 120sccm and less than or equal to 140sccm. It is understandable that by introducing nitrogen trifluoride gas to clean the reaction chamber, the semiconductor equipment can clean the reaction chamber, thereby reducing the risk of low yield in the etching process, and helping to maintain the uniformity of silicon groove depth during the etching process.
[0040] It should be noted that, in some embodiments, the second preset pressure is greater than or equal to 200 mtorr and less than or equal to 300 mtorr, that is, when the reaction chamber is initially cleaned, the gas pressure in the reaction chamber is increased so that the gas pressure in the reaction chamber reaches the second preset pressure, so as to better clean the reaction chamber.
[0041] In some embodiments, during the process of heating the reaction chamber and the process of performing preliminary cleaning of the reaction chamber, the plasma etching power is maintained at a first preset power, which is greater than or equal to 1200W and less than or equal to 1400W. The semiconductor equipment can perform cleaning of the reaction chamber through plasma and, under corresponding plasma etching power conditions, through a cleaning gas to facilitate subsequent etching of the wafer in the reaction chamber.
[0042] Figure 4 A schematic diagram of steps for cleaning the reaction chamber again is provided for one embodiment of the present application. In one embodiment, the semiconductor device needs to further clean the reaction chamber. Accordingly, the gas pressure of the reaction chamber and the plasma etching power are adjusted. The specific steps of the second cleaning of the reaction chamber by the semiconductor device are as follows:
[0043] Step S310: reducing the gas pressure in the reaction chamber so that the gas pressure in the reaction chamber reaches a third preset pressure.
[0044] Step S320, reducing the plasma etching power of the reaction chamber so that the plasma etching power of the reaction chamber reaches a second preset power.
[0045] Step S330: introducing a second cleaning gas with a fourth preset volume flow rate into the reaction chamber within a second preset time period.
[0046] During the second cleaning process, the semiconductor equipment reduces the gas pressure in the reaction chamber so that the gas pressure in the reaction chamber reaches a third preset pressure, which is less than the first preset pressure; in addition, it is also necessary to reduce the plasma etching power of the reaction chamber so that the plasma etching power of the reaction chamber reaches a second preset power, which is less than the first preset power.
[0047] Then, when the gas pressure of the reaction chamber reaches the third preset pressure and the plasma etching power reaches the second preset power, the cleaning process of the second preset duration is started, so that the second cleaning gas of the fourth preset volume flow rate is introduced into the reaction chamber within the second preset duration, wherein the second preset duration is greater than or equal to 20s and less than or equal to 30s, the second cleaning gas is oxygen (O2), and the fourth preset volume flow rate is greater than or equal to 200sccm and less than or equal to 250sccm. It can be understood that by introducing oxygen to clean the reaction chamber again, the semiconductor equipment can clean the reaction chamber, thereby reducing the risk of low yield in the etching process, and helping to maintain the uniformity of the silicon groove depth during the etching process.
[0048] It should be noted that, in some embodiments, the third preset pressure is greater than or equal to 10 mtorr and less than or equal to 20 mtorr, that is, when the reaction chamber is cleaned again, the gas pressure in the reaction chamber is reduced so that the gas pressure in the reaction chamber reaches the third preset pressure to facilitate further cleaning of the reaction chamber.
[0049] In some embodiments, when further cleaning the reaction chamber, it is necessary to adjust the plasma etching power of the reaction chamber to a second preset power, wherein the second preset power is greater than or equal to 900 W and less than or equal to 1100 W, and the second preset power is less than the first preset power. Accordingly, when the semiconductor device cleans the reaction chamber again during the pretreatment process of the reaction chamber, the plasma etching power of the reaction chamber is reduced, and the reaction chamber is cleaned again by the cleaning gas to facilitate the subsequent etching of the wafer in the reaction chamber.
[0050] In one embodiment, after the semiconductor device is started, the reaction chamber is pretreated, and the reaction chamber is in an idle state. The semiconductor device first heats the reaction chamber, and accordingly, adjusts the gas pressure of the reaction chamber to a first preset pressure, and adjusts the plasma etching power of the reaction chamber to a first preset power, wherein the first preset pressure is greater than or equal to 60mtorr and less than or equal to 72mtorr, and the first preset power is greater than or equal to 1200W and less than or equal to 1400W. Then, nitrogen trifluoride gas is introduced as the first cleaning gas to heat the reaction chamber until the dielectric window temperature of the reaction chamber reaches the target temperature, such as heating to 90°C.
[0051] After completing the heating of the reaction chamber, the semiconductor device also performs the first cleaning of the reaction chamber, and accordingly, increases the gas pressure of the reaction chamber to reach the second preset pressure, and maintains the plasma etching power at the first preset power, wherein the second preset pressure is greater than or equal to 200 mtorr and less than or equal to 300 mtorr. Then, the cleaning is performed for the first preset time, and the second volume flow rate of nitrogen trifluoride gas and the third volume flow rate of helium are introduced into the reaction chamber, specifically, the first preset time is greater than or equal to 40s and less than or equal to 50s, the second preset volume flow rate is greater than or equal to 400sccm and less than or equal to 600sccm, and the third preset volume flow rate is greater than or equal to 120sccm and less than or equal to 140sccm.
[0052] Finally, the semiconductor equipment also needs to clean the reaction chamber for the second time, reduce the gas pressure of the reaction chamber accordingly, so that the gas pressure of the reaction chamber reaches the third preset pressure, and reduce the plasma etching power of the reaction chamber so that the plasma etching power of the reaction chamber reaches the second preset power, wherein the third preset pressure is greater than or equal to 10mtorr and less than or equal to 20mtorr, and the second preset power is greater than or equal to 900W and less than or equal to 1100W. Then, cleaning is performed for a second preset time, and a fourth volume flow rate of oxygen is introduced into the reaction chamber, the second preset time is greater than or equal to 20s and less than or equal to 30s, and the fourth preset volume flow rate is greater than or equal to 200sccm and less than or equal to 250sccm.
[0053] Therefore, semiconductor equipment can improve the dielectric window temperature and clean the reaction chamber by pre-treating the reaction chamber, so that the dielectric window temperature of the reaction chamber reaches the target temperature, which helps to maintain the uniformity of the silicon groove depth during the etching process.
[0054] The present application also provides a semiconductor device, which pre-treats the reaction chamber thereon through the above-mentioned reaction chamber pre-treatment method to facilitate subsequent processing of batch wafers. After the semiconductor device has pre-treated the reaction chamber, it can better etch the wafer so that the depth of the silicon groove remains uniform during the etching process, thereby effectively reducing the risk of low yield during the etching process.
[0055] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.
[0056] Note that the above are only preferred embodiments of the present application and the technical principles used. Those skilled in the art will understand that the present application is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present application. Therefore, although the present application is described in more detail through the above embodiments, the present application is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present application, and the scope of the present application is determined by the scope of the appended claims.
Claims
1. A reaction chamber pretreatment method, characterized in that: Applied in semiconductor equipment, the reaction chamber pretreatment method comprises: After the device is started, when the reaction chamber is in an idle state, the gas pressure of the reaction chamber is adjusted to a first preset pressure and the plasma etching power is adjusted to a first preset power to heat the reaction chamber, and a first cleaning gas is introduced into the reaction chamber until the dielectric window temperature of the reaction chamber reaches a target temperature; The gas pressure of the reaction chamber is adjusted to a second preset pressure and the plasma etching power of the reaction chamber is maintained, and the gas pressure of the reaction chamber is maintained for a first preset time, and a first cleaning gas and a protective gas are introduced into the reaction chamber during the first preset time, wherein the second preset pressure is greater than the first preset pressure; After the first preset time period ends, the gas pressure of the reaction chamber is adjusted to a third preset pressure, and the plasma etching power is adjusted to a second preset power, and the gas pressure and plasma etching power of the reaction chamber are maintained for a second preset time period, and a second cleaning gas is introduced into the reaction chamber during the second preset time period, and the third preset pressure is lower than the first preset pressure, and the second preset power is lower than the first preset power.
2. The reaction chamber pretreatment method according to claim 1, characterized in that: After the device is started, when the reaction chamber is in an idle state, the gas pressure of the reaction chamber is adjusted to a first preset pressure and the plasma etching power is adjusted to a first preset power to heat the reaction chamber, and a first cleaning gas is introduced into the reaction chamber until the dielectric window temperature of the reaction chamber reaches a target temperature, including: When the gas pressure of the reaction chamber is adjusted to the first preset pressure and the plasma etching power is adjusted to the first preset power, introducing a first cleaning gas with a first preset volume flow rate into the reaction chamber; When the temperature of the dielectric window reaches the target temperature, stopping heating the reaction chamber; Among them, the first preset pressure is greater than or equal to 60mtorr and less than or equal to 72mtorr, the first cleaning gas is nitrogen trifluoride gas, the first preset volume flow rate is greater than or equal to 40sccm and less than or equal to 60sccm, and the target temperature is greater than or equal to 80°C and less than or equal to 100°C.
3. The reaction chamber pretreatment method according to claim 2, characterized in that: The target temperature is 90°C.
4. The reaction chamber pretreatment method according to claim 1, characterized in that: The step of adjusting the gas pressure of the reaction chamber to a second preset pressure and maintaining the plasma etching power of the reaction chamber, maintaining the gas pressure of the reaction chamber for a first preset time, and introducing a first cleaning gas and a protective gas into the reaction chamber during the first preset time, wherein the second preset pressure is greater than the first preset pressure, comprises: Increasing the gas pressure of the reaction chamber so that the gas pressure of the reaction chamber reaches the second preset pressure; Maintaining the plasma etching power of the reaction chamber at the first preset power; Introducing a first cleaning gas with a second preset volume flow rate and a shielding gas with a third preset volume flow rate into the reaction chamber within the first preset time period; Among them, the first preset time is greater than or equal to 40s and less than or equal to 50s, the first cleaning gas is nitrogen trifluoride gas, the second preset volume flow rate is greater than or equal to 400sccm and less than or equal to 600sccm, the protective gas is helium, and the third preset volume flow rate is greater than or equal to 120sccm and less than or equal to 140sccm.
5. The reaction chamber pretreatment method according to claim 4, characterized in that: The second preset pressure is greater than or equal to 200 mtorr and less than or equal to 300 mtorr.
6. The reaction chamber pretreatment method according to any one of claims 1 to 5, characterized in that: The first preset power is greater than or equal to 1200W and less than or equal to 1400W.
7. The reaction chamber pretreatment method according to claim 1, characterized in that: After the first preset time period ends, the gas pressure of the reaction chamber is adjusted to a third preset pressure, the plasma etching power is adjusted to a second preset power, and the gas pressure and plasma etching power of the reaction chamber are maintained for a second preset time period, and a second cleaning gas is introduced into the reaction chamber within the second preset time period, the third preset pressure is less than the first preset pressure, and the second preset power is less than the first preset power, including: Reducing the gas pressure of the reaction chamber so that the gas pressure of the reaction chamber reaches the third preset pressure; Reducing the plasma etching power of the reaction chamber so that the plasma etching power of the reaction chamber reaches the second preset power; Introducing a second cleaning gas with a fourth preset volume flow rate into the reaction chamber within the second preset time period; The second preset time is greater than or equal to 20 seconds and less than or equal to 30 seconds, the second cleaning gas is oxygen, and the fourth preset volume flow rate is greater than or equal to 200 sccm and less than or equal to 250 sccm.
8. The reaction chamber pretreatment method according to claim 7, characterized in that: The third preset pressure is greater than or equal to 10 mtorr and less than or equal to 20 mtorr.
9. The reaction chamber pretreatment method according to claim 7 or 8, characterized in that: The second preset power is greater than or equal to 900W and less than or equal to 1100W.
10. A semiconductor device, characterized in that: The semiconductor device pretreats the reaction chamber using the reaction chamber pretreating method as described in any one of claims 1 to 9.