Semiconductor measurement equipment and semiconductor process system

Abstract

The invention discloses semiconductor measurement equipment and a semiconductor process system. The semiconductor measurement equipment comprises a detection light path unit, at least one detection / measurement receiving end and a wafer bearing table, the detection light path unit is suitable for providing an incident light beam focused on the surface of a wafer to be detected; the incident light beam enters the surface of the to-be-detected wafer and is excited on the surface of the to-be-detected wafer to form an emergent light beam, the emergent light beam enters the detection / measurement receiving ends, and one of the detection / measurement receiving ends comprises an image sensing unit and a line scanning camera; the wafer bearing table is suitable for bearing the to-be-detected wafer on an XY plane below the objective lens assembly for detection, the objective lens assembly moves in the Z direction to adjust the distance between the objective lens assembly and the to-be-detected wafer, and the Z direction is perpendicular to the XY plane. The semiconductor measurement equipment provided by the invention can provide various detection / measurement functions, and is compact and simple in structure.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor measurement / detection technology, and in particular to a semiconductor measurement device and a semiconductor process system. Background Art

[0002] In each link of semiconductor design, manufacturing, and packaging, repeated inspections and tests are required to ensure product quality, so as to develop devices that meet system requirements. The impact cost of defect-related failures ranges from tens of dollars at the IC level to hundreds of dollars at the module level, and even thousands of dollars at the application end level. Therefore, detection equipment plays an irreplaceable and important role from design verification to the entire semiconductor manufacturing process. Detection equipment can help engineers discover, detect and monitor key yield deviations, thereby accelerating yield improvement and achieving higher product yields.

[0003] Front-end measurement inspection equipment: The front-end measurement inspection object is the wafer in the process. It is a physical and functional test to detect whether the processing parameters of the product after each step of the process meet the design requirements, and check whether there are defects on the wafer surface that affect the yield, to ensure that the yield of the processing production line is controlled above the specified level.

[0004] Front-end measurement and testing includes film thickness measurement equipment, OCD key dimension measurement, CD-SEM key dimension measurement, lithography calibration measurement, graphic defect detection equipment, etc. Due to the complexity of the wafer manufacturing process, many types of testing equipment are required, so it is also the link with the highest barriers in all semiconductor testing tracks. The price of a single device is higher than that of back-end test equipment, and the price difference of equipment with different functions is also large.

[0005] In the existing common wafer testing, integrated circuit test equipment (Automatic Test Equipment, ATE), automatic optical inspection (Automatic Optic Inspection, AOI) equipment and spectrum, color, brightness test equipment are usually separated. In this way, one test equipment usually only supports one test function. Wafers need to be transferred and switched for testing on multiple test equipment, and the wafers and probes are crimped multiple times, which increases the consumption of manufacturing materials, labor costs and testing time. Summary of the invention

[0006] The object of the present invention is to provide a semiconductor measuring device and a semiconductor process system to solve the problem that wafers need to be transferred and switched for testing on multiple testing devices.

[0007] To achieve the above object, the present invention provides a semiconductor measuring device, comprising:

[0008] A detection optical path unit, at least one detection / measurement receiving end and a wafer carrier;

[0009] The detection optical path unit is suitable for providing an incident light beam focused onto the surface of the wafer to be tested;

[0010] The incident light beam is incident on the surface of the wafer to be tested, and is excited on the surface of the wafer to be tested to form an outgoing light beam, and the outgoing light beam enters the detection / measurement receiving end, wherein one of the detection / measurement receiving ends includes an image sensor unit and a line scan camera;

[0011] The wafer carrying platform is suitable for carrying the wafer to be tested in an XY plane for testing.

[0012] Preferably, it also includes a robotic arm, which is suitable for conveying the wafer to be tested to the top of the wafer carrier, and controlling the transmission speed to enable the line scan camera to roughly scan the wafer to be tested to preliminarily locate defects; wherein the step of roughly scanning the wafer to be tested is before the step of carrying the wafer to be tested on the wafer carrier for inspection.

[0013] Preferably, the wafer carrying platform comprises a transmission mechanism, which is suitable for driving the wafer to translate along the X direction, translate along the Y direction and / or rotate in the XY plane.

[0014] Preferably, the movement of the wafer to be tested is controlled by a transmission mechanism of the wafer carrier, and the image sensing unit and the line scan camera are cooperated to achieve precise scanning of the wafer to be tested.

[0015] Preferably, it also includes a light splitting unit and other detection / measurement receiving ends, which are suitable for splitting the outgoing light beam excited by the incident light beam on the surface of the wafer to be measured into at least two measurement light paths, which enter different detection / measurement receiving ends respectively.

[0016] Preferably, the incident light beam is incident on the surface of the wafer to be measured through the objective lens assembly, and forms an outgoing light beam on the surface of the wafer to be measured that is incident on the objective lens assembly, and is incident on the spectroscopic unit through the objective lens assembly; the objective lens assembly moves in the Z direction to adjust the distance from the wafer to be measured, and the Z direction is perpendicular to the XY plane.

[0017] Preferably, the wafer carrying platform further includes a first station and a second station, the first station and the second station are respectively located at different heights in the Z direction, and the carrying surfaces are parallel to the XY plane, suitable for carrying the wafer to be tested.

[0018] Preferably, after the first wafer on the first station is inspected, the unloading mechanism performs the unloading operation, and at the same time the loading mechanism moves the second wafer on the second station to the first station for inspection, and the third wafer is loaded to the second station.

[0019] Preferably, the first station and the second station are staggered by a certain distance in the X direction and / or the Y direction, respectively corresponding to different detection / measurement receiving ends, so as to realize defect detection and film thickness measurement of different wafers at the same time.

[0020] Preferably, the incident light beam enters the objective lens assembly through a first reflector, the outgoing light beam passes through the objective lens and then enters the spectroscopic unit through a second reflector, the outgoing light beam also includes an outgoing main light path, the measuring light path is separated from the outgoing main light path by the spectroscopic unit, and the incident light beam and the outgoing main light path are a common light path structure.

[0021] Preferably, the reflection band of the first reflector and the second reflector is 190-1500 nm.

[0022] Preferably, the detection / measurement receiving end further includes an optical power detection unit and / or a spectrum detection unit.

[0023] Preferably, the detection optical path unit is provided with an incident light beam by a light source assembly, and the spectroscopic unit comprises n spectroscopes which are sequentially arranged on the optical path of the outgoing light beam to separate the outgoing light beam into n+1 measurement optical paths, which enter n+1 detection / measurement receiving ends respectively.

[0024] Preferably, the outgoing light beam is split by a first beam splitter to form the first beam splitter and the second beam splitter, and the first beam splitter passes through an achromatic lens and a cylindrical mirror in sequence and enters an optical power detection unit for obtaining the spot power to calculate and analyze the defocus amount of the objective lens.

[0025] Preferably, the second beam splits into a third beam and a fourth beam through the tube lens and the second beam splitter, and the third beam enters the image sensing unit to obtain image signal information, or the third beam enters the spectrum detection unit to obtain reflection spectrum information of the film.

[0026] Preferably, the fourth beam splitter is split by a third beam splitter to form a fifth beam splitter and a sixth beam splitter, and the fifth beam splitter enters a spectrum detection unit to obtain reflection spectrum information of the film, or the fifth beam splitter enters the image sensing unit to obtain image signal information.

[0027] Preferably, the detection optical path unit is provided with an incident light beam by a light source assembly, and the light source assembly is one or more independent light sources, including an ultraviolet segment, a visible segment and / or an infrared segment.

[0028] Preferably, the light source assembly is coaxial illumination, bright field illumination or / and dark field illumination.

[0029] Preferably, the detection / measurement receiving end receives by optical fiber coupling or spatial direct coupling.

[0030] Preferably, it also includes a data analysis unit, which is suitable for acquiring image signal data, reflection spectrum data and / or optical power data of the detection / measurement receiving end to calculate and process wafer defects, surface film information and / or defocus amount.

[0031] Preferably, the light splitting unit is a wide-band coated element and / or a dot-grid light splitter.

[0032] Preferably, the spectroscopic band of the spectroscopic unit is 190-1500 nm.

[0033] On the other hand, the technical solution of the present invention further provides a semiconductor process system, including: a process device and a measurement / measuring device;

[0034] The process device is suitable for treating or processing a wafer in a semiconductor process;

[0035] The measurement / testing device comprises the semiconductor test equipment as described above, and the semiconductor test equipment is suitable for testing the wafers after being processed or processed by the process device to determine whether the processing or processing of the semiconductor process meets the standards;

[0036] If the standards are not met, the wafer is moved to the process device for treatment or processing.

[0037] Preferably, the semiconductor process processing or machining performed by the process device is photolithography, etching, thin film deposition, cleaning or CMP.

[0038] Due to the application of the above scheme, the present invention has the following advantages and effects compared with the prior art:

[0039] In the semiconductor measuring equipment provided by the technical solution of the present invention, at least one detection / measurement receiving end is provided, and one of the detection / measurement receiving ends includes an image sensor unit and a line scan camera. The wafer carrier carries the wafer to be tested for detection, thereby providing a semiconductor measuring equipment that includes at least a line scan of wafer surface defects.

[0040] Furthermore, in the semiconductor measuring equipment provided by the technical solution of the present invention, the wafer to be tested is also transported by a robotic arm, and the transport speed is controlled, so that the line scan camera can perform a rough scan of the wafer to be tested, so as to preliminarily locate defects on the surface of the wafer to be tested, thereby making the detection quick and accurate.

[0041] Furthermore, in the semiconductor measurement equipment provided by the technical solution of the present invention, at least partially overlapping upper and lower double workstations are arranged on the wafer carrier, thereby reducing the measurement waiting time, improving the measurement efficiency, and not occupying too much machine space.

[0042] Furthermore, in the semiconductor measurement equipment provided by the technical solution of the present invention, by setting up upper and lower double workstations that are staggered by a certain distance, defect detection and film thickness measurement of different wafers can be achieved simultaneously.

[0043] Furthermore, in the semiconductor measuring device provided by the technical solution of the present invention, the measuring optical path is separated from the main optical path through the optical splitter unit, so that the semiconductor measuring device provided by the present invention can realize multiple detection or measurement functions simultaneously in the same device or in the same detection. Compared with the solution of realizing multiple detection or measurement functions in the traditional technology, the present invention reduces the number of required focusing lenses, makes the optical path structure more compact, saves costs, and keeps the structure of the device simple, solving the problem of single function and difficult integration of existing machines.

[0044] Furthermore, in the semiconductor measuring device provided by the technical solution of the present invention, the common optical path structure design of the incident light beam and the outgoing main optical path can make the structure of the device more compact and simple, improve the anti-interference ability of the machine, and enhance the measurement stability and repeatability of the machine. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 A schematic diagram of a semiconductor measuring device provided in Embodiment 1 of the present invention;

[0046] Figure 2 It is a schematic diagram of a semiconductor measuring device provided in the second embodiment of the present invention;

[0047] Figure 3 It is a schematic diagram of a semiconductor measuring device provided in Embodiment 3 of the present invention;

[0048] Figures 4 to 5 It is a schematic diagram of a semiconductor measuring device provided in a fourth embodiment of the present invention;

[0049] Figure 6 to Figure 7 It is a schematic diagram of a semiconductor measuring device provided in a fifth embodiment of the present invention;

[0050] Figures 8 to 9 It is a schematic diagram of a semiconductor measuring device provided in a sixth embodiment of the present invention;

[0051] Fig.10 It is a schematic diagram of a semiconductor process system provided in the seventh embodiment of the present invention. DETAILED DESCRIPTION

[0052] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0053] In the present invention, unless otherwise clearly defined and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0054] In the present invention, the orientation or position relationship indicated by terms such as "center", "upper", "lower", "axial", "bottom", "inside" and "outside" is based on the orientation or position assembly relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0055] In addition, the terms "first", "second", etc. are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0056] Embodiment 1

[0057] refer to Figure 1 As shown, an embodiment of the present invention provides a semiconductor measuring device, comprising:

[0058] A detection optical path unit 900, at least one detection / measurement receiving end and a wafer carrier;

[0059] The detection optical path unit 900 is adapted to provide an incident light beam Li focused onto the surface of the wafer to be tested;

[0060] The incident light beam Li is incident on the surface of the wafer 100 to be tested, and is excited on the surface of the wafer to be tested to form an outgoing light beam, and the outgoing light beam enters the detection / measurement receiving end, wherein one of the detection / measurement receiving ends includes an image sensor unit and a line scan camera;

[0061] The wafer carrying platform is suitable for carrying the wafer to be tested in the XY plane below the objective lens assembly for detection. The objective lens assembly moves in the Z direction to adjust the distance from the wafer to be tested, and the Z direction is perpendicular to the XY plane.

[0062] Furthermore, the detection / measurement receiving end also includes an image sensing unit and a line scan camera; the wafer to be tested is driven by a wafer transmission unit to enable the line scan camera to capture images to detect defects.

[0063] The wafer carrier includes a transmission mechanism, which is suitable for driving the wafer to translate along the X direction, translate along the Y direction, or / and rotate in the XY plane. The movement of the wafer to be tested is controlled by the transmission mechanism of the wafer carrier, and the image sensor unit and the line scan camera are used to achieve a precise scan of the wafer to be tested 100.

[0064] The wafer carrying platform further includes a first station 81 and a second station 82 , wherein the first station 81 and the second station 82 are respectively located at different heights in the Z direction, and the carrying surfaces are both parallel to the XY plane, suitable for carrying the wafer to be tested.

[0065] In one implementation, after the first wafer on the first station 81 is inspected, the unloading mechanism 84 performs the unloading operation, and at the same time, the loading mechanism 85 moves the second wafer of the second station 82 to the first station 81 for inspection, and at the same time, the third wafer is loaded to the second station 82.

[0066] In one implementation, the first station 81 and the second station 82 are staggered by a certain distance in the X direction and / or the Y direction, respectively corresponding to different detection / measurement receiving ends, so as to simultaneously realize defect detection and film thickness measurement of different wafers.

[0067] In this embodiment, the semiconductor measuring device also includes a spectroscopic unit 700, which is suitable for dividing the outgoing light beam Lr excited by the incident light beam Li on the surface of the wafer 100 to be measured into at least two measurement light paths, which enter different detection / measurement receiving ends respectively to perform defect detection, image focusing and / or film thickness measurement.

[0068] Specifically, in this embodiment, the detection optical path unit 900 is provided with an incident light beam Li by a light source assembly.

[0069] The light source assembly includes one or more independent light sources, and multiple independent light sources such as ultraviolet, visible, infrared, etc. can be selected according to needs, or they can be used in combination to couple light sources of multiple bands into the optical system at the same time. The multiple independent light sources can be optically coupled or spatially directly coupled according to the use conditions.

[0070] Furthermore, the light source assembly is coaxial illumination, bright field illumination and / or dark field illumination.

[0071] Continue to refer Figure 1 As shown, in this embodiment, the light source assembly includes two independent light sources: a first light source S1 and a second light source S2. The light beams emitted from the first light source S1 and the second light source S2 are combined by a beam splitter (not shown) to form a first light path, which is projected onto the surface of the wafer 100 to be tested as a detection light beam.

[0072] Furthermore, in this embodiment, the first optical path may also pass through a tube lens and / or an objective lens to achieve focusing and collimation of the incident light beam Li.

[0073] Continue to refer Figure 1 As shown, in this embodiment, the incident light beam Li is projected onto the measuring area / point on the surface of the wafer 100 to be measured, and an outgoing light beam Lr is formed on the surface of the wafer 100 to be measured.

[0074] In some embodiments, the outgoing light beam Lr may enter the light splitting unit 700 through a tube lens and / or an objective lens.

[0075] In some embodiments, the incident light beam Li and the outgoing light beam Lr may change the propagation direction of light through a reflector, and the specific setting of the reflector is set according to the internal structure of the semiconductor measurement device and the specific application scenario.

[0076] Continue to refer Figure 1 As shown, in this embodiment, the light splitting unit includes n light splitters, which are sequentially arranged on the optical path of the outgoing light beam to split the outgoing light beam into n+1 measurement light paths Lt1, Lt2, Lt3, ..., Lt n+1 , respectively enter n+1 detection / measurement receiving ends: the first detection / measurement receiving end, the second detection / measurement receiving end, ..., the nth detection / measurement receiving end, and the n+1th detection / measurement receiving end.

[0077] exist Figure 1In the illustrated embodiment, the n beam splitters are arranged in parallel and along the main optical path of the outgoing light beam Lr. In other embodiments, the n beam splitters may also be arranged in a staggered manner, with the latter beam splitter being arranged on the beam splitting optical path of the outgoing light beam Lr on the former beam splitter to split the outgoing light beam Lr into corresponding detection / measurement receiving ends.

[0078] Furthermore, in this embodiment, the spectroscopic unit can adopt various forms of spectroscopes, such as plane spectroscopes, spectroscopic prisms, single-wavelength spectroscopes, broadband spectroscopes, ordinary spectroscopic prisms, polarizing spectroscopic prisms, depolarizing spectroscopic prisms, ultraviolet spectroscopes, visible spectroscopes, near-infrared spectroscopes, infrared spectroscopes, and thin film spectroscopes.

[0079] Furthermore, the light splitting unit may be in the form of an anti-reflection film or a substrate.

[0080] Furthermore, the light splitting unit can split light according to a specified ratio (with independent wavelengths or polarization states), and can also be used as a one-way reflector. The light splitting unit can also split light according to wavelength, or according to light intensity.

[0081] Preferably, in this embodiment, the light splitting unit may use a wide-band coated light splitting element or a dot-grid light splitter.

[0082] Preferably, the spectroscopic band of the spectroscopic unit is 190-1500 nm.

[0083] Continue to refer Figure 1 As shown, in this embodiment, the detection / measurement receiving end includes: a first detection / measurement receiving end, a second detection / measurement receiving end, ..., an nth detection / measurement receiving end, and an n+1th detection / measurement receiving end. In a specific implementation, the detection / measurement receiving end may also include one or more of an optical power detection unit, an image sensing unit, or a spectrum detection unit as required.

[0084] Furthermore, the detection / measurement receiving end receives the incident light beam Lr by optical fiber coupling or spatial direct coupling.

[0085] In a specific implementation, one of the detection / measurement receiving ends is an optical power detection unit. Further, a certain path of split light passes through an achromatic lens and a cylindrical mirror in sequence and enters the optical power detection unit to obtain the spot power to calculate and analyze the defocus amount of the objective lens.

[0086] In a specific implementation, one of the detection / measurement receiving ends is an image sensing unit. Further, the outgoing light beam Lr or a certain path of split light passes through the tube lens and a beam splitter and then enters the image sensing unit to obtain image signal information.

[0087] In a specific implementation, one of the detection / measurement receiving ends is a spectrum detection unit. Further, the outgoing light beam Lr or a certain path of split light passes through the tube lens and a beam splitter and then enters the spectrum detection unit to obtain the reflection spectrum information of the film.

[0088] Furthermore, the detection / measurement receiving end also includes an image sensing unit and an area array camera; the area array camera can collect image information of surrounding points while measuring film thickness, or perform defect detection alone.

[0089] Furthermore, a semiconductor measuring device provided in an embodiment of the present invention also includes a data analysis unit, which is suitable for obtaining image signal data, reflection spectrum data and / or optical power data obtained from the detection / measurement receiving end, so as to calculate and process wafer defects, surface film information and / or defocus amount.

[0090] Embodiment 2

[0091] refer to Figure 2 As shown, an embodiment of the present invention provides a semiconductor measuring device, comprising:

[0092] The detection optical path unit 900 is adapted to provide an incident light beam Li focused onto the surface of the wafer to be tested;

[0093] The light splitting unit 700 is adapted to split the outgoing light beam Lr excited by the incident light beam Li on the surface of the wafer 100 to be tested into at least two measuring light paths, which enter different detection / measurement receiving ends respectively, for defect detection, image focusing and / or film thickness measurement.

[0094] The incident light beam Li is incident on the surface of the wafer 100 to be tested through the objective lens assembly B, and forms an outgoing light beam Lr on the surface of the wafer 100 to be tested and incident on the objective lens assembly B, and then incident on the light splitting unit 700 through the objective lens assembly B.

[0095] Specifically, in this embodiment, the detection optical path unit 900 is provided with incident light beams Li by independent light sources S1 and S2.

[0096] refer to Figure 2 As shown, in one embodiment, the incident light beam Li enters the objective lens assembly B through the first reflector C1, and the outgoing light beam Lr passes through the objective lens assembly B and then enters the light splitting unit 700 through the second reflector C2.

[0097] The outgoing light beam Lr also includes an outgoing main light path, and the measuring light paths Lt1, Lt2, Lt3, ..., Lt n+1 The light is separated from the outgoing main light path by the light splitting unit.

[0098] Furthermore, the spectroscopic band of the spectroscopic unit is 190-1500 nm.

[0099] Furthermore, the reflection band of the first reflector and the second reflector is 190-1500 nm.

[0100] Embodiment 3

[0101] refer to Figure 3 As shown, an embodiment of the present invention provides a semiconductor measuring device, comprising:

[0102] The detection optical path unit 900 is adapted to provide an incident light beam Li focused onto the surface of the wafer to be tested;

[0103] The light splitting unit 700 is adapted to split the outgoing light beam Lr excited by the incident light beam Li on the surface of the wafer 100 to be tested into at least two measuring light paths, which enter different detection / measurement receiving ends respectively, for defect detection, image focusing and / or film thickness measurement.

[0104] The incident light beam Li is incident on the surface of the wafer 100 to be tested through the objective lens assembly B, and forms an outgoing light beam Lr on the surface of the wafer 100 to be tested and incident on the objective lens assembly B, and then incident on the light splitting unit 700 through the objective lens assembly B.

[0105] refer to Figure 2 As shown, in one embodiment, the incident light beam Li enters the objective lens assembly B through the third reflector C3, and the outgoing light beam Lr passes through the objective lens assembly B and then enters the light splitting unit 700 through the third reflector C3.

[0106] The outgoing light beam Lr also includes an outgoing main light path, and the measuring light paths Lt1, Lt2, Lt3, ..., Lt n+1 The light is separated from the outgoing main light path by the light splitting unit.

[0107] In this embodiment, the incident light beam Li and the outgoing main light path are a common light path structure.

[0108] refer to Figure 4 As shown, Figure 4 This is a specific implementation of the incident light beam Li and the outgoing main light path in this embodiment as a common light path structure.

[0109] In this embodiment, the incident light beam Li, after being irradiated from the first light source S1 and / or the second light source S2, further includes a configuration for changing the direction of the light path through a fourth reflector C4 before entering the objective lens assembly B. Specifically, in this embodiment, the light path of the incident light beam Li between the fourth reflector C4 and the objective lens overlaps with the outgoing main light path or is parallel to form a common light path structure of the incident light beam Li and the outgoing main light path.

[0110] In this embodiment, the measuring light path is separated from the main output light path by a spectroscopic unit, so that the semiconductor measuring device provided by the present invention can realize multiple detection or measurement functions simultaneously in the same device or in the same detection, and keep the structure of the device simple and compact, thus solving the problem of single function and difficult integration of existing machines.

[0111] Furthermore, in this embodiment, the common optical path structure design of the incident light beam Li and the outgoing main optical path can make the structure of the equipment more compact and simple, thereby saving costs, improving the anti-interference ability of the machine, and enhancing the measurement stability and repeatability of the machine.

[0112] Embodiment 4

[0113] Specifically, the following combination Figures 4 to 5 The specific embodiments of the semiconductor measuring device shown are used to illustrate the technical core of the present invention. However, the following specific embodiments cannot be understood as limiting all technical solutions and specific implementation situations that can be covered by the technical principles of the present invention.

[0114] Figures 4 to 5 The semiconductor measurement device shown integrates wafer thickness detection, image real-time focusing, and wafer defect detection functions.

[0115] Specifically, in this embodiment, the detection optical path unit 900 may include, according to specific needs: a light source for providing a light beam required for defect detection, image focusing and film thickness measurement; a pinhole for limiting the size of the light spot; a spectrometer for splitting and combining the light beam; and a reflector for deflecting the direction of the light beam.

[0116] Specifically, in this embodiment, Figure 4 As shown, the light source includes a first light source 1 and a second light source 18. The first light source 1 and the second light source 18 can be selected from a variety of independent light sources such as ultraviolet, visible, infrared, etc. according to needs, or can be used in combination to couple light sources of multiple bands into the optical system at the same time to provide the light beam required for wafer film thickness measurement, defect detection and real-time image focusing.

[0117] Furthermore, in this embodiment, the light source can extract light in the manner of optical fiber coupling, spatial direct coupling, etc. according to the use conditions. Furthermore, in this embodiment, the first light source 1 selects a light source in the 190-1500nm band, and extracts light through the first small hole 2 through optical fiber coupling, and the second light source 18 selects a light source in the 400-700nm band, and extracts light directly through spatial coupling.

[0118] Furthermore, in this embodiment, the light beams emitted by the first light source 1 and the second light source 18 are combined by the fourth beam splitter 19 to form a first light path as the incident light beam Li.

[0119] The incident light beam Li is guided to the objective lens through the tube lens and the reflector, and the objective lens 10 focuses the light beam onto the surface of the wafer 100 to be tested on the carrier. The tube lens is used to adjust the focus of the light beam. The reflector is used to change the direction of the light beam; the objective lens is used to make the light path perpendicular to the wafer surface and form a focused light spot that can move on the wafer surface.

[0120] Specifically, in this embodiment, the first light path passes through the third beam splitter 3, the second beam splitter 20, the first tube lens 4, the first beam splitter 5, the first reflector 6, and the second reflector 9, and enters the first objective lens 10, and the first objective lens 10 focuses the light beam onto the wafer surface.

[0121] The first objective lens 10 may be a single objective lens, or two or more objective lenses may be installed and switched through a conversion table. In the case where the first objective lens 10 is a single objective lens, the specific model parameters are replaced independently according to the required magnification and band.

[0122] In this embodiment, the objective lens assembly includes a first objective lens 10 and a switching platform, and the first objective lens 10 is connected to the switching platform (not shown). The first objective lens and the first tube lens 4 cooperate to achieve 8 times, 20 times, and 50 times field magnification, so as to detect defects of different sizes. The first objective lens 10 has a focal length of 25 mm, 10 mm, or 4 mm, and the focal length of the first tube lens 4 is 200 mm.

[0123] Furthermore, in this embodiment, the objective lens assembly further includes a Z-direction driving device 31, and the first objective lens 10 is translated in the Z direction by the Z-direction driving device 31 to adjust the distance from the wafer to be measured 100. Furthermore, in the case where the focusing accuracy is required to be high, the Z-direction driving device 31 can be controlled by a piezoelectric displacement stage to achieve nanometer-level transmission.

[0124] In this embodiment, the objective lens assembly 80 is also suitable for being driven as a whole by the first X-direction driving device 11 to translate in the X direction, serving as the scanning axis X axis of the first objective lens 10 .

[0125] Further, in this embodiment, the surface of the wafer to be tested is excited to form an outgoing light beam Lr, and after the outgoing light beam Lr passes through the first objective lens 10, the second reflector 9, and the first reflector 6, it is split by the first beam splitter 5 and the second beam splitter 20 into a first beam splitter, a third beam splitter, and a fifth beam splitter, which enter different detection / measurement receiving ends respectively. Specifically, the different detection / measurement receiving ends in this embodiment include an image sensing unit, a spectrum detection unit detection, or an optical power detection unit.

[0126] Specifically, the first reflector 6 is connected to the second X-direction driving device 7 to be translated in the X-direction under the drive of the second X-direction driving device 7. When measuring the film thickness of a wafer, the first X-direction driving device 7 is first used to drive the first reflector 6 along the X-direction to move out of the optical path to obtain a reference beam of the reference sheet 8, and then the second X-direction driving device 7 is used to cut the first reflector 6 into the optical path to measure the film thickness of the wafer 100 to be measured on the upper station 81.

[0127] In other implementations, the detection / measurement receiving end may include a spectrometer, CMOS, CCD, diode detection array, optical power detector or four-quadrant detector and signal processing circuit and other different methods to receive and process the reflected light signal. The receiving end may use optical fiber or direct coupling to receive the outgoing light beam Lr. Further, when using optical fiber, the wide spectrum can be divided into the corresponding detection / measurement receiving end in a one-to-many manner so as to collect data and analyze it at one time.

[0128] Specifically, in this embodiment, the outgoing light beam Lr is split by the first beam splitter 5 to form the first sub-beam and the second sub-beam, and the first sub-beam passes through the first achromatic lens 12 and the first cylindrical lens 13 in sequence and enters the first optical power detection unit 14, which is used to obtain the spot power of the spot at different positions, so as to calculate and analyze the defocus amount of the objective lens, so as to determine whether the first objective lens 10 is defocused and the defocus amount. Among them, the first achromatic lens 12 and the first cylindrical lens 13 are used to generate astigmatic spots.

[0129] The second split beam is split by the first tube lens 4 and the second beam splitter 20 to form a third split beam and a fourth split beam, and the third split beam enters the image sensing unit 21 to obtain image signal information, or the third split beam enters the spectrum detection unit to obtain the reflection spectrum information of the film to calculate the film thickness of the wafer 100 to be tested. The first tube lens 4 is used to adjust the focus of the beam.

[0130] In this embodiment, according to the needs of the specific scene, a polarizing device can be added at the parallel light between the first tube lens 4 and the first objective lens 10, and the polarizing device can move in the X direction with the first objective lens 10, or can be fixed at the parallel light. The polarizing device can select a birefringent device with a fixed polarization state and angle or an elastic light modulator that changes the polarization state by modulating the voltage according to the needs.

[0131] The fourth beam splitter is split by the third beam splitter 3 to form a fifth beam splitter and a sixth beam splitter. The fifth beam splitter enters the spectrum detection unit 17 to obtain the reflection spectrum information of the thin film to calculate the film thickness information of the wafer 100 to be tested, or the fifth beam splitter enters the image sensing unit to obtain image signal information.

[0132] In this embodiment, the spectrum detection unit 17 uses a spectrometer with a wavelength range of 190 to 1500 nm, and couples the measurement light beam through the second pinhole 15 and the spectrum optical fiber 16. The first optical power detection unit 14 uses a four-quadrant detector, and the receiving light beam adopts a direct coupling method. Among them, the spectrum optical fiber is used to guide the light into the spectrum detection unit.

[0133] In this embodiment, the image sensor unit 21 can select a line scan camera in combination with a transmission method or directly use an area array camera to receive wafer surface information according to demand.

[0134] In the implementation using a line scan camera, a rough scan can be performed to locate defects by controlling the speed of the robot arm during wafer transfer, and then a fine scan can be performed to detect defects by a wafer transfer unit;

[0135] In the implementation using the area array camera, the semiconductor measurement device used in this embodiment can obtain defect information around the measurement point of the wafer 100 to be tested while measuring the film thickness of the wafer 100 to be tested, and can also perform defect detection of the entire wafer separately. The defects that can be detected by the semiconductor measurement device used in this embodiment include but are not limited to scratches, particles, dirt, etc.

[0136] Furthermore, in this embodiment, the image sensing unit 21 uses a planar CCD with a resolution of 5120*5120 and a pixel size of 2.5 μm, and the receiving light beam adopts a direct coupling method.

[0137] In this embodiment, the first beam splitter 5, the second beam splitter 20, the third beam splitter 3, and the fourth beam splitter 19 can use wide-band coated elements or dot-grid beam splitters, and the beam splitting band is selected according to needs. In some implementations, 190-1500 nm can be selected.

[0138] In this embodiment, the reflection band of the first reflector 6 and the second reflector 9 is selected to be 190-1500 nm.

[0139] In this embodiment, a structure in which the incident light beam Li and the outgoing main light path share a common optical path is adopted, so that the structure of the device is compact, the internal accessories are relatively few, and two or more semiconductor detection or measurement are provided at the same time, including wafer film thickness measurement, defect detection and real-time image focusing.

[0140] Furthermore, in some implementations, the illumination method of the light source of the semiconductor measuring device adopted in this embodiment can not only adopt the coaxial illumination method as in this example, but also adopt a variety of independent illumination methods such as bright field illumination, dark field illumination, etc., or use them in combination. A variety of illumination methods can be simultaneously applied to the optical system of the semiconductor measuring device provided by the present invention to meet a variety of detection / measurement needs.

[0141] The semiconductor measuring device provided in the technical solution of the present invention may also include a wafer carrying table, which is suitable for carrying the wafer 100 to be tested in the XY plane below the objective lens assembly 10 for detection, and the objective lens assembly moves in the Z direction to adjust the distance from the wafer to be tested, and the Z direction is perpendicular to the XY plane.

[0142] Furthermore, the wafer carrier includes a transmission mechanism suitable for driving the wafer to translate along the X direction, translate along the Y direction and / or rotate in the XY plane, wherein the X direction is parallel to the optical path of the incident light beam between the light source and the first reflector.

[0143] Furthermore, the detection / measurement receiving end also includes an image sensing unit and a line scan camera;

[0144] The line scan camera can realize line scan acquisition through a wafer transmission unit to detect defects.

[0145] Specific, combined Figure 4 and Figure 5 In this embodiment, the wafer carrier includes an upper station 81 and a lower station 82. The wafers to be tested carried by the upper station 81 and the lower station 82 can be 8-inch or 12-inch wafers. Furthermore, the wafer carrier also includes a first arm and a second arm. During detection, the first wafer to be tested is transported into the upper station 81 by the first arm, and the first arm becomes the upper arm 84. At the same time, the second wafer is transported into the lower station by the second arm, and the second arm becomes the lower arm 85. The upper station 81 is the current measurement station, that is, the incident light beam Li is excited by the surface of the wafer to be tested in the upper station 81 and enters the first objective lens 10 to form the outgoing light beam Lr. Furthermore, the positional relationship of "upper" and "lower" of the upper station 81 and the lower station 82 is set along the Z direction. The waiting time for measurement is saved and the measurement efficiency is improved.

[0146] Furthermore, the wafer carrier also includes a transmission module part, which can drive the upper station 81 to translate in the X direction or the Y direction, or to rotate around the wafer center θ axis in the XY plane.

[0147] In this embodiment, it is suitable to utilize the translation of the objective lens assembly 80 in the X direction, combined with the wafer support table to drive the wafer to be tested 100 to rotate around the center axis θ of the wafer in the XY plane or translate along the Y direction, so as to complete the film thickness measurement and defect detection of the entire wafer. At the same time, the output end of the objective lens adopts a parallel light design, and the measurement is not affected during movement.

[0148] In this embodiment, the objective lens assembly 80 only needs to move in the X direction by the length of the radius of the wafer to be measured, and with the cooperation of the wafer supporting platform, the film thickness measurement and defect detection of the entire wafer surface can be achieved.

[0149] In this embodiment, the wafer carrier can be driven in three axes, X, Y, and θ, to meet the requirements of high-precision repeated measurement and high-precision positioning. The movement distance and accuracy of the Y-axis transmission component can be adjusted according to requirements. When high-precision alignment and wafer Y-direction transmission are not required, the Y-axis can be cancelled.

[0150] In this embodiment, when high-precision center alignment is required, a Y-axis with a shorter stroke and higher precision can be used. When the distance between the wafer loading port and the measurement position is long, a Y-axis with a longer stroke can be used for wafer transmission.

[0151] In addition, in this embodiment, the first displacement linear device 7 drives the first reflector 6 to move in the X direction. The first displacement linear device 7 is first used to move the first reflector 6 out of the optical path to obtain the reference beam of the reference film 8, and then the first displacement linear device 7 is used to cut the first reflector 6 into the optical path to perform wafer film thickness measurement at the upper workstation 81.

[0152] Furthermore, the wafer carrier also includes an inspection station and a waiting station. When the inspection of the first wafer at the inspection station is completed, the unloading unit performs the unloading operation, and at the same time, the loading unit moves the second wafer at the waiting station to the inspection station for inspection, and at the same time, the third wafer is loaded to the waiting station.

[0153] Furthermore, the semiconductor measuring device used in this embodiment also includes a data analysis unit, which is suitable for obtaining image signal data, reflection spectrum data and / or optical power data obtained from the detection / measurement receiving end to calculate and process wafer defects, surface film information and / or defocus amount.

[0154] Embodiment 5

[0155] Figure 6 and Figure 7 A semiconductor measuring device provided in this embodiment includes:

[0156] The detection optical path unit 900 is adapted to provide an incident light beam Li focused onto the surface of the wafer to be tested;

[0157] The light splitting unit 700 is adapted to split the outgoing light beam Lr excited by the incident light beam Li on the surface of the wafer 100 to be tested into at least two measuring light paths, which enter different detection / measurement receiving ends respectively, for defect detection, image focusing and / or film thickness measurement.

[0158] The incident light beam Li is incident on the surface of the wafer 100 to be tested through the objective lens assembly B, and forms an outgoing light beam Lr on the surface of the wafer 100 to be tested and incident on the objective lens assembly B, and then incident on the light splitting unit 700 through the objective lens assembly B.

[0159] In this embodiment, the detection optical path unit 900 may include two incident light beams Li from light sources in different directions, and different outgoing light beams Lr that penetrate from the objective lens assembly along the common optical path of the incident light beams Li, so as to enter multiple detection / measurement receiving ends distributed on the main optical paths of different incident light beams Li, thereby enabling the arrangement of the internal structure of the device to be more flexible and better adaptable to the limitations of machine space in some application scenarios.

[0160] Specifically, refer to Figure 6 As shown, the first light source 1 and the second light source 18 are respectively located on both sides of the objective lens assembly in the X direction, providing different incident light beams Li1, Li2.

[0161] Combined with reference Figure 7 As described above, the outgoing light beam formed from the surface of the wafer to be tested on the receiving table passes through different second beam splitters 91 and fourth reflectors 24 respectively, and the first outgoing light beam Lr1 and the second outgoing light beam Lr2 are derived, each of which propagates along the optical path common to the incident light beams Li1 and Li2.

[0162] The first outgoing light beam Lr1 is reflected by the first reflector 6, and then passes through the first beam splitter 5 to be divided into two sub-beams. One beam passes through the first achromatic lens 12 and the first cylindrical lens 13 to enter the first optical power detection unit 14, and the other beam continues to propagate along the main light path of the incident light beam Li1 and the first outgoing light beam Lr1, passes through the first tube lens 4, and then enters the third beam splitter 3. One of the sub-beams passes through the second small hole 15 and the spectral optical fiber 16 to enter the spectral detector unit 17.

[0163] The second outgoing light beam Lr2 is reflected by the third reflector 23 , passes through the second tube lens 22 , and enters the fourth beam splitter 19 , where one of the split light beams enters the image sensor 22 .

[0164] In this embodiment, the fourth beam splitter 19 is a wide-band coated element, the beam splitting band is 400-700 nm, and the reflection bands of the third reflector 23 and the fourth reflector 24 are 400-700 nm.

[0165] Embodiment 6

[0166] Figure 8 and Fig. 9 A semiconductor measuring device provided in this embodiment includes:

[0167] The detection optical path unit 900 is adapted to provide an incident light beam Li focused onto the surface of the wafer to be tested;

[0168] The light splitting unit 700 is adapted to split the outgoing light beam Lr excited by the incident light beam Li on the surface of the wafer 100 to be tested into at least two measuring light paths, which enter different detection / measurement receiving ends respectively, for defect detection, image focusing and / or film thickness measurement.

[0169] The incident light beam Li is incident on the surface of the wafer 100 to be tested through the objective lens assembly B, and forms an outgoing light beam Lr on the surface of the wafer 100 to be tested and incident on the objective lens assembly B, and then incident on the light splitting unit 700 through the objective lens assembly B.

[0170] The light source includes a first light source 1 and a second light source 18 , which respectively provide a first incident light beam and a second incident light beam, and the objective lens assembly B includes two objective lenses: a first objective lens 10 and a second objective lens 25 .

[0171] In the carrier, the upper and lower stations are staggered by a certain distance, the upper station 81 is located below the second objective lens 25, and is used to detect wafer defects, and the lower station 82 is located below the first objective lens 10, and is used to measure the film thickness. In this embodiment, the upper station 81 and the lower station 82 can simultaneously provide different wafers for measurement under different objective lenses, and the wafer measurement efficiency can be greatly accelerated through the circular transmission of the robot arm.

[0172] According to different requirements, in this embodiment, a rough defect inspection can also be performed at the upper station 81, and then the thickness of the defect of interest can be accurately measured at the lower station to analyze the specific defect.

[0173] In this embodiment, the fourth beam splitter 19 and the fifth beam splitter 27 are broadband coated components, the beam splitting band is 400-700 nm, and the reflection band of the third reflector 23 and the fourth reflector 24 is 400-700 nm.

[0174] The image sensing unit 21 can select a line scan camera in combination with a transmission method or directly use an area array camera to receive wafer surface information according to demand.

[0175] The use of a line scan camera can achieve a coarse scan to locate defects by controlling the speed of the robotic arm when transmitting the film, or a fine scan to detect defects can be achieved through the wafer transmission unit. The use of an area array camera can obtain image recognition of surrounding points, defect information, and other information while measuring the film thickness, and can also perform defect detection independently.

[0176] In this embodiment, the image sensing unit 21 uses a line scan CCD with 8K resolution and 5 μm pixel size, and the receiving light beam adopts a direct coupling method.

[0177] like Fig. 9 As shown, the distance between the upper station 81 and the lower station 82 can be set according to the machine structure size and the measuring range of the transmission module. In this embodiment, the distance between the upper and lower stations is 1 / 4 to 1 / 2 of a 12-inch wafer, preferably 1 / 3. In this way, it can not hinder the two measurements / detections from being carried out at the same time, and it can also ensure that the transmission distance is at a suitable distance, while ensuring that the structure of the entire semiconductor measurement equipment is compact.

[0178] The first wafer is transported to the upper station 81 by the first arm, and the first arm becomes the loading mechanism 84; after the wafer at the upper station 81 completes wafer defect detection, it is transported to the lower station 82 by the first arm for wafer film thickness measurement, and the first arm becomes the lower mechanism 85 at this time; at the same time, the second wafer is transported to the upper station 81 by the second arm for wafer defect detection, and the second arm becomes the loading mechanism 84; in this way, the wafer defect detection can be performed on the wafer at the upper station 81 and the wafer surface thin film measurement can be performed on the wafer at the lower station 82 at the same time, which saves the waiting time for measurement and improves the measurement efficiency while expanding the function.

[0179] Embodiment 7

[0180] refer to Fig.10 As shown, the technical solution of the present invention further provides a semiconductor process system 900, including: a process device 910 and a measurement / measuring device 920;

[0181] The process device 910 is suitable for processing or machining a wafer in a semiconductor process;

[0182] The measurement / testing device comprises the semiconductor test equipment as described in all the above embodiments, and the semiconductor test equipment is suitable for testing the wafers after being processed or processed by the process device to determine whether the processing or processing of the semiconductor process meets the standards;

[0183] If the standards are not met, the wafer is moved to the process device for treatment or processing.

[0184] Preferably, the semiconductor process processing or machining performed by the process device is photolithography, etching, thin film deposition, cleaning or CMP.

[0185] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor measuring device, characterized in that: include: A detection optical path unit, at least one detection / measurement receiving end and a wafer carrier; The detection optical path unit is suitable for providing an incident light beam focused onto the surface of the wafer to be tested; The incident light beam is incident on the surface of the wafer to be tested, and is excited on the surface of the wafer to be tested to form an outgoing light beam, and the outgoing light beam enters the detection / measurement receiving end, wherein one of the detection / measurement receiving ends includes an image sensor unit and a line scan camera; The wafer carrying platform is suitable for carrying the wafer to be tested in an XY plane for testing.

2. The semiconductor measuring device according to claim 1, characterized in that It also includes a robotic arm, which is suitable for conveying the wafer to be tested to the top of the wafer carrier, and controlling the transmission speed to enable the line scan camera to roughly scan the wafer to be tested to preliminarily locate defects; wherein the step of roughly scanning the wafer to be tested is before the step of carrying the wafer to be tested on the wafer carrier for inspection.

3. The semiconductor measuring device according to claim 2, characterized in that The wafer carrying platform comprises a transmission mechanism, which is suitable for driving the wafer to translate along the X direction, translate along the Y direction and / or rotate in the XY plane.

4. The semiconductor measuring device according to claim 3, characterized in that The movement of the wafer to be tested is controlled by the transmission mechanism of the wafer carrier, and the image sensing unit and the line scan camera are cooperated to achieve precise scanning of the wafer to be tested.

5. The semiconductor measuring device according to claim 1, wherein: Also includes: The light splitting unit and other detection / measurement receiving ends are suitable for dividing the outgoing light beam excited by the incident light beam on the surface of the wafer to be measured into at least two measurement light paths, which enter different detection / measurement receiving ends respectively.

6. The semiconductor measuring device according to claim 5, characterized in that The incident light beam is incident on the surface of the wafer to be measured through the objective lens assembly, and forms an outgoing light beam on the surface of the wafer to be measured, which is incident on the objective lens assembly, and is incident on the light splitting unit through the objective lens assembly; The objective lens assembly moves in a Z direction to adjust the distance from the wafer to be measured, and the Z direction is perpendicular to the XY plane.

7. The semiconductor measuring device according to claim 6, characterized in that The wafer carrying platform also includes a first station and a second station, wherein the first station and the second station are respectively located at different heights in the Z direction, and the carrying surfaces are parallel to the XY plane, suitable for carrying the wafer to be tested.

8. The semiconductor measuring device according to claim 7, characterized in that When the first wafer on the first station is inspected, the unloading mechanism performs the unloading operation, and the loading mechanism moves the second wafer on the second station to the first station for inspection, and the third wafer is loaded to the second station.

9. The semiconductor measuring device according to claim 7, characterized in that The first station and the second station are staggered by a certain distance in the X direction and / or the Y direction, and correspond to different detection / measurement receiving ends respectively, so as to realize defect detection and film thickness measurement of different wafers at the same time.

10. The semiconductor measuring device according to claim 6, wherein: The incident light beam enters the objective lens assembly through the first reflector, the outgoing light beam passes through the objective lens and then enters the spectroscopic unit through the second reflector, the outgoing light beam also includes an outgoing main light path, the measuring light path is separated from the outgoing main light path by the spectroscopic unit, and the incident light beam and the outgoing main light path are a common light path structure.

11. The semiconductor measuring device according to claim 10, characterized in that The reflection band of the first reflector and the second reflector is 190-1500 nm.

12. The semiconductor measuring device according to claim 5, characterized in that The detection / measurement receiving end also includes an optical power detection unit and / or a spectrum detection unit.

13. The semiconductor measuring device according to claim 5, characterized in that The detection optical path unit is provided with an incident light beam by a light source assembly, and the light splitting unit comprises n beam splitters which are sequentially arranged on the optical path of the outgoing light beam to split the outgoing light beam into n+1 measurement optical paths which enter n+1 detection / measurement receiving ends respectively.

14. The semiconductor measuring device according to claim 13, characterized in that The outgoing light beam is split by the first beam splitter to form the first beam splitter and the second beam splitter. The first beam splitter passes through an achromatic lens and a cylindrical mirror in sequence and enters an optical power detection unit to obtain a spot power to calculate and analyze the defocus amount of the objective lens.

15. The semiconductor measuring device according to claim 14, characterized in that The second sub-beam is split by the tube lens and the second beam splitter to form a third sub-beam and a fourth sub-beam. The third sub-beam enters the image sensing unit to obtain image signal information, or the third sub-beam enters the spectrum detection unit to obtain reflection spectrum information of the film.

16. The semiconductor measuring device according to claim 15, characterized in that The fourth beam splits into a fifth beam and a sixth beam through the third beam splitter, and the fifth beam enters the spectrum detection unit to obtain the reflection spectrum information of the film, or the fifth beam enters the image sensing unit to obtain image signal information.

17. The semiconductor measuring device according to claim 1, wherein: The detection optical path unit is provided with an incident light beam by a light source assembly, and the light source assembly is one or more independent light sources, including an ultraviolet segment, a visible segment and / or an infrared segment.

18. The semiconductor measuring device according to claim 17, characterized in that The light source assembly is coaxial illumination, bright field illumination or / and dark field illumination.

19. The semiconductor measuring device according to claim 17, wherein: The detection / measurement receiving end receives the signals in the form of optical fiber coupling or spatial direct coupling.

20. The semiconductor measuring device according to claim 5, characterized in that It also includes a data analysis unit, which is suitable for acquiring image signal data, reflection spectrum data and / or optical power data of the detection / measurement receiving end to calculate and process the wafer defects, surface film information and / or defocus amount.

21. The semiconductor measuring device according to claim 5, characterized in that The light splitting unit is a wide-band coated element and / or a dot-grid light splitter.

22. The semiconductor measuring device according to claim 5, characterized in that The spectroscopic band of the spectroscopic unit is 190-1500nm.

23. A semiconductor process system, characterized in that: include: Process equipment and metrology / measurement equipment; The process device is suitable for treating or processing a wafer in a semiconductor process; The measurement / testing device comprises the semiconductor test equipment as claimed in claim 1, wherein the semiconductor test equipment is suitable for testing the wafers after being processed or processed by the process device to determine whether the processing or processing of the semiconductor process meets the standards; If the standards are not met, the wafer is moved to the process device for treatment or processing.

24. The semiconductor process system according to claim 23, characterized in that: The semiconductor process processing or machining performed by the process device is photolithography, etching, thin film deposition, cleaning or CMP.

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