Photo-thermal camouflage device and manufacturing method thereof

Abstract

The invention relates to a photo-thermal camouflage device and a manufacturing method thereof. The photo-thermal camouflage device comprises a semiconductor refrigeration substrate, RGB-LEDs are arranged in the semiconductor refrigeration substrate, the semiconductor refrigeration substrate further comprises a lower substrate, an upper substrate, electrodes and semiconductor particles, the lower substrate and the upper substrate are oppositely arranged, the electrodes are arranged on the lower substrate and the upper substrate, and the semiconductor particles are arranged on the electrodes. The semiconductor particles comprise P-type semiconductor particles and N-type semiconductor particles, the P-type semiconductor particles and the N-type semiconductor particles are alternately arranged between the lower substrate and the upper substrate and form a loop together with the electrode, and during working, external voltage is applied to the loop, so that the semiconductor particles are formed by the P-type semiconductor particles and the N-type semiconductor particles; the device is cooled and heated by adjusting the direction and magnitude of the current so as to change the infrared spectrum image of the device. According to the invention, the semiconductor refrigeration substrate and the RGB-LED are integrated by utilizing the advantages of no refrigerant, no vibration and no noise during working and simplicity and convenience in operation of a semiconductor refrigeration technology, so that the photo-thermal camouflage device with independently adjustable visible light and infrared light patterns is manufactured.

Description

Technical Field

[0001] The present invention relates to the technical field of photothermal camouflage, and in particular to a photothermal camouflage device and a manufacturing method thereof. Background Art

[0002] Photothermal camouflage is a technology that uses specific materials and system designs to simulate or mask the photothermal characteristics of a target to make it invisible. With the development of science and technology, modern detection technology can cover a wider spectral range, including visible light, infrared and other spectral regions. This means that in order to cope with increasingly complex detection environments, camouflage systems need to have more complete wide-spectrum control capabilities and be able to simulate or mask the photothermal characteristics of a target in multiple spectral regions.

[0003] Light-emitting diodes (LEDs) are widely used in lighting, display and other fields due to their high efficiency, long life, easy driving and programmability. Due to the unique advantages of LEDs and their high-quality display effects, they have been applied to the field of visible light camouflage and have achieved good results. However, the infrared pattern of LED-based camouflage cannot be changed under the same visible light pattern, which greatly reduces its feasibility of camouflage in the infrared field. Therefore, further research on LED-based visible light-infrared wide-spectrum active camouflage devices has great application prospects.

[0004] Liu Dongqing et al. disclosed in the Chinese invention patent CN 110763084 A the "visible light and thermal infrared compatible adaptive camouflage device and display module", whose display module is a multi-layer stacked planar structure, which includes from the outer layer to the inner layer: multiple layers of ITO transparent films with different emissivity, polarizing films, diffusion films, light guide plates, reflective films, aluminum substrates, and circuit boards, and semiconductor thermoelectric cooling sheets are also attached to the circuit boards. This solution achieves visible light camouflage through LED light emission, but it uses independent semiconductor thermoelectric sheets and embeds them in the circuit board, so the integration is not high. Summary of the invention

[0005] In order to solve at least one of the problems existing in the prior art, the present application provides a photothermal camouflage device, which uses semiconductor refrigeration technology to regulate the temperature of the LED photothermal camouflage device to achieve camouflage of the infrared pattern of the device, so that the visible light pattern and the infrared pattern of the photothermal camouflage device can be independently regulated (the infrared pattern is regulated by the semiconductor refrigeration substrate, and the visible light pattern is regulated by the RGB-LED chip), thereby achieving camouflage in a wide spectral range.

[0006] In order to achieve the purpose of the present invention, the present invention provides a photothermal camouflage device, including a luminous semiconductor refrigeration substrate, an RGB-LED is arranged in the semiconductor refrigeration substrate, the semiconductor refrigeration substrate also includes a lower substrate, an upper substrate, electrodes and semiconductor particles, the lower substrate and the upper substrate are arranged opposite to each other, the lower substrate and the upper substrate are both provided with the electrodes, the semiconductor particles include P-type semiconductor particles and N-type semiconductor particles, the P-type semiconductor particles and the N-type semiconductor particles are alternately arranged between the lower substrate and the upper substrate, and the electrodes form a loop. When working, an external voltage is applied to the loop, and the device is cooled and heated by adjusting the direction and magnitude of the current to change the infrared spectrum image of the device.

[0007] Furthermore, the semiconductor refrigeration substrate is located at the bottom of the device.

[0008] Furthermore, the semiconductor refrigeration substrate also includes an RGB-LED power supply circuit, which is patterned and printed on the lower substrate, and the pins of the RGB-LED are connected to the soldering contacts of the RGB-LED power supply circuit.

[0009] Specifically, the RGB-LED power supply circuit is patterned and printed at a vacant position on the upper surface of the lower substrate.

[0010] Furthermore, the RGB-LED outputs a visible light image when powered on, and the output of the visible light pattern of the device is changed by changing the power supply mode of the RGB-LED.

[0011] The RGB-LED is mounted on the upper surface of the lower substrate of the semiconductor refrigeration substrate and is connected to the RGB-LED power supply circuit. By supplying power to the RGB-LED, it can emit the visible light required by the photothermal camouflage device, and by adjusting the power supply mode to the RGB-LED chip (by adjusting the voltage of the three components of R, G, and B of the LED to adjust the color of the visible light emitted by the LED to change the output of the visible light), the purpose of changing the visible light pattern of the photothermal camouflage device can be achieved.

[0012] Furthermore, it also includes a control system, which is connected to the semiconductor refrigeration substrate and is used to control the voltage input of the semiconductor refrigeration substrate and the RGB-LED.

[0013] The control system can be connected to the circuit composed of semiconductor particles and electrodes in the semiconductor refrigeration substrate and the RGB-LED power supply circuit. By controlling the voltage input of the circuit in the semiconductor refrigeration substrate and the voltage input of the RGB-LED at the same time, the infrared image output and the visible light image output of the device can be independently controlled.

[0014] The control system includes a single-chip microcomputer control chip, a power supply and a power drive module, a step-down module and a temperature sensor, and is connected to a circuit composed of semiconductor particles and electrodes in a semiconductor refrigeration substrate and an RGB-LED power supply circuit. Based on the temperature feedback and fuzzy PID algorithm of the temperature sensor, the single-chip microcomputer control chip can complete the input control of the voltage magnitude and direction of the circuit in the semiconductor refrigeration substrate, thereby adjusting the device to the corresponding temperature to complete the control requirements for infrared image output. At the same time, the single-chip microcomputer control chip can also be used to control the voltage input of the RGB-LED to complete the control of the visible light image output.

[0015] Furthermore, it also includes a flexible scattering layer, which is located on the surface of the semiconductor refrigeration substrate. The flexible scattering layer can improve the uniformity of visible light distribution without affecting the transmission of infrared radiation.

[0016] Furthermore, the flexible scattering layer is a flexible film made of a material with high infrared transparency and high visible light scattering ability, which can improve the uniformity of visible light distribution without affecting the transmission of infrared radiation.

[0017] Furthermore, it also includes a photothermal conversion layer, which covers the flexible scattering layer and is used to convert part of the visible light into infrared radiation to improve the infrared pattern clarity of the photothermal camouflage device.

[0018] Furthermore, the light-to-heat conversion layer is a black colloidal film made of a flexible substrate and a light-absorbing and heat-generating material. The color of the light-to-heat conversion layer is black, which can make the light-to-heat camouflage device appear black when there is no external current on the RGB-LED, making up for the defect that the RGB-LED cannot display black, and making the visible light display of the light-to-heat camouflage device full-color.

[0019] Furthermore, it also includes an external heat dissipation component, which is used to dissipate the heat emitted by the semiconductor refrigeration substrate when it is working.

[0020] Furthermore, the heat dissipation component can be selectively placed under the lower substrate of the semiconductor refrigeration substrate. Due to the thermoelectric effect, when the semiconductor refrigeration substrate is working, the upper surface will radiate heat while the lower surface will cool. A certain heat dissipation component installed at the bottom can dissipate the excess heat generated at the lower surface of the lower substrate when the device is working through heat conduction and convection heat transfer to protect the device from the influence of excess heat.

[0021] Preferably, the external heat dissipation component includes a copper heat pipe, fins and a heat dissipation fan.

[0022] The present invention also provides a method for manufacturing a photothermal camouflage device, including the steps of manufacturing a semiconductor refrigeration substrate, the steps of manufacturing the semiconductor refrigeration substrate comprising: patterning electrodes of a preset thickness on the upper surface of a lower substrate and the lower surface of an upper substrate, arranging the P-type semiconductor particles and the N-type semiconductor particles alternately at the positions where the electrodes on the surfaces of the upper substrate and the lower substrate overlap, and connecting each semiconductor particle to the electrodes on the surfaces of the upper substrate and the lower substrate to form a loop.

[0023] The invention also includes an RGB-LED installation method, which includes the steps of: printing a patterned copper power supply circuit at a free position on the upper surface of the lower substrate, and connecting the pins of the RGB-LED to the soldering contacts of the copper power supply circuit by soldering.

[0024] The invention also includes a method for manufacturing a flexible scattering layer, which comprises: placing PMMA particles into a reagent bottle containing DMF, stirring to fully dissolve them to obtain a PMMA solution, then performing ultrasonic treatment, evenly applying the PMMA solution on a clean glass substrate, starting a coating machine for spin coating, performing volatilization treatment to obtain a PMMA flexible scattering film adsorbed on the glass substrate, and performing ultrasonic cleaning to obtain the flexible scattering layer.

[0025] It also includes a method for manufacturing a light-to-heat conversion layer, which includes: adding a light-absorbing and heat-generating material to a flexible substrate to obtain a light-absorbing and heat-generating colloid, vacuum degassing the obtained light-absorbing and heat-generating colloid, and obtaining the light-to-heat conversion layer after injection molding and curing.

[0026] Compared with the prior art, the present invention has the following beneficial effects:

[0027] (1) The present invention utilizes an integrated semiconductor refrigeration substrate to control the temperature of the photothermal camouflage device, thereby reducing the size of the photothermal camouflage device while increasing the modulatable range of its infrared image.

[0028] (2) The introduction of the flexible scattering layer makes the light spot of the RGB-LED display more uniform, giving the photothermal camouflage device a better visible light image output effect.

[0029] (3) The black photothermal conversion layer used on the surface of the photothermal camouflage device not only enhances the clarity of the infrared image, but also makes up for the defect that the RGB-LED chip cannot display black, thus achieving full colorization of the visible light image.

[0030] (4) The present invention proposes a semiconductor refrigeration substrate with a semiconductor thermoelectric effect. While having the ability to output infrared images of a semiconductor thermoelectric chip control device, it can also replace the circuit board as a substrate for carrying LEDs and has the ability to output visible light patterns. Compared with existing patent technology documents, the present invention has higher integration and integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic diagram of the overall structure of a photothermal camouflage device in an embodiment of the present application.

[0032] Figure 2 It is a schematic diagram of the local structure of the semiconductor refrigeration substrate in the embodiment of the present application.

[0033] Figure 3 It is a working principle diagram of the photothermal camouflage device in the embodiment of the present application, including the principle of regulating the temperature of the semiconductor substrate to control the infrared spectrum and the output of the visible light pattern.

[0034] Figure 4 It is an electronic circuit diagram on the lower substrate and the upper substrate inside the semiconductor refrigeration substrate in the embodiment of the present application, including a schematic diagram of the electronic circuit for powering the semiconductor refrigeration substrate and the RGB-LED.

[0035] In the figure, 1, semiconductor refrigeration substrate, 11, lower substrate, 12, upper substrate, 13, electrodes, 14, semiconductor particles, including P-type semiconductor particles 141 and N-type semiconductor particles 142), 15, RGB-LED, 16, RGB-LED power supply circuit; 2, flexible scattering layer; 3, light-to-heat conversion layer; 4, external heat dissipation component; 5, control system; 6, semiconductor refrigeration substrate power supply circuit on the lower substrate; 7, semiconductor refrigeration substrate power supply circuit on the upper substrate; 8, RGB-LED welding contact; 9, semiconductor refrigeration substrate power input terminal; 10, RGB-LED power input terminal. DETAILED DESCRIPTION

[0036] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments; based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0037] The present invention provides a photothermal camouflage device, such as Figure 1 As shown, it mainly includes a semiconductor refrigeration substrate 1, a flexible scattering layer 2, a photothermal conversion layer 3, an external heat dissipation component 4 and a control system. The semiconductor refrigeration substrate 1 is located at the bottom of the device, and the semiconductor refrigeration substrate 1 is the main body of the photothermal camouflage device, which is used to adjust the temperature of the photothermal camouflage device to modulate its infrared image output.

[0038] The RGB-LED is installed inside the semiconductor refrigeration substrate 1 to output visible light images. The flexible scattering layer 2 is installed above the semiconductor refrigeration substrate 1 to make the visible light spot emitted by the RGB-LED uniform. The photothermal conversion layer 3 is installed above the flexible scattering layer 2 to increase the clarity of the infrared image and make the visible light image full-color. The external heat dissipation component 4 is installed below the semiconductor refrigeration substrate 1 of the photothermal camouflage device to eliminate the excess heat generated when the semiconductor refrigeration substrate 1 is working. The control system 5 is connected to the semiconductor refrigeration substrate 1 to control the voltage input of the semiconductor refrigeration substrate 1 and the RGB-LED to control the visible light image and infrared light image output of the photothermal camouflage device.

[0039] In some embodiments of the present invention, the model of the RGB-LED used is 0805.

[0040] In some embodiments of the present invention, the external heat dissipation component 4 includes a copper heat pipe, a fin heat sink and a fan.

[0041] In some embodiments of the present invention, the control system 5 uses STM32F103C8T6 as the main control chip, selects LD1117-5 and LD1117-3.3 as power driver chips and uses a 12V battery to power the device, and selects a DS18B20 digital temperature sensor as a negative feedback element.

[0042] like Figure 2 As shown, the semiconductor refrigeration substrate 1 includes a lower substrate 11, an upper substrate 12, electrodes 3, semiconductor particles 14, RGB-LEDs 5 and RGB-LED power supply circuits 16.

[0043] like Figure 2 As shown, the electrodes 3 are patterned and printed on the upper surface of the lower substrate 11 and the lower surface of the upper substrate 12. The semiconductor particles 14 include P-type semiconductor particles 141 and N-type semiconductor particles 142, which are alternately arranged at the positions where the electrodes 3 on the surfaces of the upper substrate 12 and the lower substrate 11 overlap, and each semiconductor particle is connected to the electrodes on the surfaces of the upper and lower substrates by soldering to form an energized circuit, thereby achieving the function of connecting the upper and lower substrates.

[0044] In some embodiments of the present invention, the lower substrate 11 is made of ceramic, and in other embodiments, it can be replaced by other insulating materials with high thermal conductivity. The upper substrate 12 can be made of insulating ceramic material with high thermal conductivity, and a hole is opened at the position corresponding to the LED to avoid affecting the visible light pattern output performance of the device.

[0045] In some embodiments of the present invention, the upper substrate 12 may also be made of a transparent material, preferably a glass material such as sapphire glass or quartz glass.

[0046] In some embodiments of the present invention, the electrode 3 is made of a conductive material, such as copper, aluminum, etc.

[0047] In this embodiment, if Figure 2 As shown, the RGB-LED 5 is welded and installed in the free position on the upper surface of the lower substrate 11 (according to Figure 4 In the RGB-LED power supply circuit, the RGB-LED is soldered at the position of the RGB-LED soldering contact 8) and powered by a copper power supply circuit printed on the lower substrate 11.

[0048] In this embodiment, if Figure 3 As shown, a current in the direction shown in the figure is applied to the loop formed by the semiconductor particles and the electrode 3. Due to the thermoelectric effect, heat is absorbed at the node of the upper substrate 12, showing a cooling effect, and heat is released at the node of the lower substrate 11, showing a heating effect. If the current is reversed, the opposite is true. By controlling this phenomenon, the surface temperature of the photothermal camouflage device can be adjusted to control the output of the infrared spectrum pattern of the photothermal camouflage device.

[0049] In this embodiment, if Figure 3 As shown, the visible light emitted by the RGB-LED 5 is scattered by the flexible scattering layer, thereby emitting a uniform visible light pattern.

[0050] In this embodiment, if Figure 4 As shown, the RGB-LED 5 is welded on the contact point in the figure, and the working circuit of the semiconductor cooling substrate 1 and the power supply circuit of the RGB-LED 5 are connected according to the circuit in the figure. In this embodiment, the RGB-LED power supply circuit 16 welds the four RGB-LEDs on the position of the RGB-LED welding contact 8 and uses the RGB-LED power supply circuit 16 to connect the common anode and the R, G, and B triodes of the LED to the four RGB-LED power input terminals 10 respectively. By controlling the voltage between the R, G, and B triodes and the common anode respectively, the red, green, and blue light components of the LED can be adjusted respectively to output the required visible light.

[0051] The photothermal camouflage device provided in the aforementioned embodiment of the present invention increases the modulatable range of the device for infrared images by applying semiconductor refrigeration technology to the photothermal camouflage device. At the same time, the device has the ability to output uniform and full-color visible light images, thereby realizing wide-spectrum photothermal camouflage.

[0052] Semiconductor refrigeration technology, also known as thermoelectric refrigeration technology, is a refrigeration method based on the thermoelectric phenomenon. The so-called thermoelectric phenomenon refers to the phenomenon that when direct current passes through a closed loop composed of two different materials, one contact surface will be cold and the other contact surface will be hot. Compared with traditional refrigeration technology, it has the characteristics of simple structure and reversible conversion of cold and heat. It can be well applied to the temperature control of photothermal camouflage devices to achieve the camouflage of their infrared patterns.

[0053] The above-mentioned embodiment of the present invention provides a photothermal camouflage device, the main body of which is a luminous semiconductor refrigeration substrate, on which a flexible scattering layer and a photothermal conversion layer can be added and externally connected to a heat dissipation component and a control system for use. The heat dissipation component can be installed at the bottom of the semiconductor substrate to remove the extra heat generated during the operation of the device. The control system is connected to the semiconductor refrigeration substrate and the internal RGB-LED to control the output of the device's visible light pattern and infrared pattern. The present invention utilizes the advantages of semiconductor refrigeration technology that does not require refrigerants, operates without vibration and noise, and is easy to operate, and integrates the semiconductor refrigeration substrate with RGB-LED to manufacture a photothermal camouflage device with independently adjustable visible light and infrared light patterns.

[0054] In some embodiments of the present invention, a method for manufacturing a photothermal camouflage device is also provided.

[0055] The photothermal camouflage device manufacturing method includes a semiconductor refrigeration substrate manufacturing method, an RGB-LED installation method, a flexible scattering layer manufacturing method and a photothermal conversion layer manufacturing method.

[0056] The manufacturing method of the semiconductor refrigeration substrate is as follows: the electrodes 3 of a preset thickness (e.g., a thickness of about 100 um) are patterned and printed on the upper surface of the lower substrate and the lower surface of the upper substrate. The P-type semiconductor particles and the N-type semiconductor particles are arranged alternately at the positions where the electrodes on the upper and lower substrate surfaces overlap. Each semiconductor particle is connected to the electrodes on the upper and lower substrate surfaces by soldering to form a loop, thereby achieving the effect of connecting the upper and lower substrates.

[0057] The RGB-LED installation method is as follows: a patterned copper power supply circuit is printed at a free position on the upper surface of the lower substrate, the pins of the RGB-LED are connected to the soldering contacts of the copper power supply circuit by soldering to achieve the purpose of installation connection, and the purpose of powering the RGB-LED is achieved by energizing the copper power supply circuit.

[0058] The flexible scattering layer 2 is a flexible film made of a material with high infrared transparency and high visible light scattering ability. In some embodiments of the present invention, the material used for the flexible scattering layer is PMMA (in other embodiments, infrared transparent materials such as calcium fluoride and barium fluoride can also be used), and the phase separation process is carried out by DMF solvent. The specific manufacturing method is: put an appropriate amount of PMMA particles (PMMA concentration 0.1 to 0.3g / mL, the optimal concentration is 0.2g / mL) into a reagent bottle containing DMF, add a magnetic stirrer and use a magnetic stirrer to stir for more than 6h to fully dissolve it until there is no particle residue at the bottom of the bottle. The above PMMA solution is ultrasonically treated with an ultrasonic crusher. Ultrasonic treatment can cut the long polymer chain in PMMA into small molecules, which is conducive to enhancing the transmission and scattering ability of PMMA to light. The optimal parameters of the ultrasonic treatment process are to use 90w power, and after each ultrasonic first preset time (such as 40s), it is still for a second preset time (such as 20s) to prevent overheating, and lasts for a third preset time (such as 5h). The PMMA solution after the ultrasonic treatment is spin-coated using a glue machine, and the steps are as follows: first, a clean glass substrate after ethanol cleaning and plasma cleaning is adsorbed on the glue machine, and then the PMMA solution is evenly applied on the clean glass substrate, and the glue machine is turned on for spin coating, and the optimal speed of the glue machine is 250r / min. After the spin coating is completed, the glass substrate is placed in a fume hood for volatilization treatment for more than a fourth preset time (such as 1h) to obtain a PMMA flexible scattering film adsorbed on the glass substrate. Finally, an ultrasonic cleaning machine is used for ultrasonic cleaning to make the film fall off on the glass substrate to obtain the flexible scattering layer.

[0059] Polymethyl methacrylate (PMMA) is a polymer material with stable chemical properties and high mechanical strength. The phase separation process combined with N,N-dimethylformamide (DMF) can make the PMMA material form a porous structure with high visible light scattering and infrared light transmittance. The scattering film manufactured by this method can improve the uniformity of the device's visible light pattern without affecting the infrared pattern of the photothermal camouflage device.

[0060] The photothermal conversion layer is a black colloidal film made of a flexible substrate and a light-absorbing and heating material. In some embodiments of the present invention, PDMS is used as a flexible substrate, and black carbon powder is selected as a light-absorbing and heating material (in other embodiments, the light-absorbing and heating material can be replaced by materials such as graphene, carbon nanotubes, etc., and the flexible material can also be replaced by PET, etc.). The specific manufacturing method is: the A component and the B component of PDMS are prepared in a mass ratio of 10:1, and then an appropriate mass of carbon powder is added, and the optimal concentration of carbon powder is 2wt% to obtain a light-absorbing and heating colloid. The prepared light-absorbing and heating colloid is vacuum degassed for 5min to ensure the uniformity of film formation, and the vacuum degassed speed is 1000r / min and the vacuum degree is lower than -95kPa. The degassed colloid is extracted with a syringe and injected into the mold. It is necessary to ensure that there is no air entering during the extraction and injection molding process. During injection molding, it can be judged whether it is filled by observing the overflow of the colloid from the exhaust hole. The mold filled with the colloid is placed in an oven at a preset temperature (such as 90°C) for curing (such as curing for 30min). After curing is completed, the mold is taken out, and the protrusions of the injection port and the outflow port at both ends are removed to obtain the manufactured black light-to-heat conversion layer.

[0061] Polydimethylsiloxane (PDMS) is a flexible substrate. By encapsulating black carbon powder, graphene, carbon nanotubes and other light-absorbing and heat-generating materials in PDMS to form a photothermal conversion film, it can be used to improve the brightness of infrared images.

[0062] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A photothermal camouflage device, characterized in that: It includes a semiconductor refrigeration substrate, in which an RGB-LED is arranged. The semiconductor refrigeration substrate also includes a lower substrate, an upper substrate, electrodes and semiconductor particles. The lower substrate and the upper substrate are arranged opposite to each other, and the lower substrate and the upper substrate are both provided with the electrodes. The semiconductor particles include P-type semiconductor particles and N-type semiconductor particles. The P-type semiconductor particles and the N-type semiconductor particles are alternately arranged between the lower substrate and the upper substrate and form a loop with the electrodes. When working, an external voltage is applied to the loop, and the temperature of the device is reduced or increased by adjusting the direction and size of the current to change the infrared spectrum image of the device.

2. A photothermal camouflage device according to claim 1, characterized in that: The semiconductor refrigeration substrate also includes an RGB-LED power supply circuit, which is patterned and printed on the lower substrate, and the pins of the RGB-LED are connected to the welding contacts of the RGB-LED power supply circuit.

3. A photothermal camouflage device according to claim 2, characterized in that: The RGB-LED outputs a visible light image after being powered, and the output of the device's visible light pattern can be changed by changing the power supply mode of the RGB-LED.

4. The photothermal camouflage device according to claim 2, characterized in that: It also includes a control system, which is connected to the semiconductor refrigeration substrate and is used to control the voltage input of the semiconductor refrigeration substrate and the RGB-LED.

5. The photothermal camouflage device according to claim 1, characterized in that: It also includes a flexible scattering layer, which is located on the surface of the semiconductor refrigeration substrate and is used to make the visible light spot emitted by the RGB-LED uniform.

6. The photothermal camouflage device according to claim 5, characterized in that: The flexible scattering layer is a flexible film made of a material with high infrared transparency and high visible light scattering ability.

7. The photothermal camouflage device according to claim 5, characterized in that: It also includes a light-to-heat conversion layer, which covers the flexible scattering layer and is used to convert part of the visible light into infrared radiation.

8. The photothermal camouflage device according to claim 7, characterized in that: The light-to-heat conversion layer is a black colloidal film made of a flexible substrate and a light-absorbing and heat-generating material.

9. A photothermal camouflage device according to any one of claims 1 to 8, characterized in that: It also includes an external heat dissipation component, which is used to dissipate the extra heat generated during the operation of the device.

10. A method for manufacturing a photothermal camouflage device, characterized in that: The method comprises the steps of manufacturing a semiconductor refrigeration substrate, wherein the manufacturing steps of the semiconductor refrigeration substrate include: patterning electrodes of a preset thickness on the upper surface of a lower substrate and the lower surface of an upper substrate, alternately arranging the P-type semiconductor particles and the N-type semiconductor particles at the overlapping positions of the electrodes on the surfaces of the upper substrate and the lower substrate, and connecting each semiconductor particle to the electrodes on the surfaces of the upper substrate and the lower substrate to form a loop.

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