Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus according to one embodiment of the present invention is provided with a substrate holding unit (31), an optical sensor (60), and a control unit (18). The substrate holding unit (31) holds and rotates a substrate to be processed. The optical sensor (60) irradiates light to the substrate held and rotated by the substrate holding unit (31) and receives reflected light. The control unit (18) controls each unit. The control unit (18) has a generation unit (18a) and a determination unit (18c). The generation unit (18a) emits light from the light sensor (60) to the substrate held and rotated by the substrate holding unit (31), acquires the intensity change of the reflected light during the rotation of the substrate, and generates cycle variation data. The determination unit (18c) determines whether or not the holding state of the substrate held by the substrate holding unit (31) is normal on the basis of the periodic variation data.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Conventionally, single wafer processing is performed to process substrates such as semiconductor wafers (hereinafter also referred to as wafers) one by one while rotating the substrate while the substrate is held by a substrate holding portion (see Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent No. 5661022 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technology capable of detecting the holding state of a substrate with high accuracy.

[0008] Technical solutions for solving technical problems

[0009] A substrate processing device according to one embodiment of the present invention includes a substrate holding unit, a light sensor, and a control unit. The substrate holding unit holds the substrate to be processed and rotates it. The light sensor irradiates light to the substrate held and rotated by the substrate holding unit and receives reflected light. The control unit controls each unit. In addition, the control unit includes a generating unit and a judging unit. The generating unit irradiates light from the light sensor to the substrate held and rotated by the substrate holding unit, and obtains the intensity change of the reflected light during the rotation of the substrate to generate periodic variation data. The judging unit judges whether the holding state of the substrate held by the substrate holding unit is normal based on the periodic variation data.

[0010] Effects of the Invention

[0011] According to the present invention, the holding state of the substrate can be detected with high accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram showing a schematic structure of a substrate processing system according to an embodiment.

[0013] Figure 2 It is a schematic diagram showing an example of a specific structure of a processing unit according to an embodiment.

[0014] Figure 3 This is a block diagram showing an example of the configuration of a control device according to an embodiment.

[0015] Figure 4This is a diagram showing an example of periodic variation data according to the embodiment.

[0016] Figure 5 It is a diagram for explaining the state of a wafer held by a substrate holding portion according to the embodiment.

[0017] Figure 6 This is a diagram showing an example of difference data according to an embodiment.

[0018] Figure 7 This is a flowchart showing an example of the flow of control processing executed by the substrate processing system according to the embodiment.

[0019] Figure 8 This is a flowchart showing an example of the flow of a holding abnormality detection process executed by the substrate processing system according to the embodiment.

[0020] Fig. 9 This is a flowchart showing an example of the flow of the time-varying change detection process executed by the substrate processing system according to the embodiment. DETAILED DESCRIPTION

[0021] Hereinafter, with reference to the accompanying drawings, the embodiments of the substrate processing device and the substrate processing method disclosed in the present application are described in detail. The present invention is not limited to the embodiments shown below. It should be noted that the accompanying drawings are schematic diagrams, and the relationship between the dimensions of the elements, the ratio of the elements, etc. are sometimes different from the actual. The drawings sometimes also include parts with different dimensional relationships and ratios.

[0022] Conventionally, substrates such as semiconductor wafers (hereinafter also referred to as wafers) are processed one by one while rotating the substrates while being held by a substrate holding portion. Therefore, when substrate processing is performed without completely holding the substrates, there is a possibility that the substrate processing cannot be performed sufficiently, the processing liquid may be largely scattered on the inner wall of the chamber, and the like.

[0023] The main causes of the deterioration of the holding state include, for example, defective parts or assembly of the holding jig or pins, deterioration due to wear and thermal deformation of the holding jig or pins, and poor centering adjustment of the conveying arm position.

[0024] Therefore, the following technology is known: using an imaging device to capture the held substrate, and detecting the holding state of the substrate by comparing the captured image with a reference image. On the other hand, in this prior art, there is room for further improvement in detecting the holding state of the substrate with high accuracy.

[0025] Therefore, people are looking forward to realizing a technology that can overcome the above-mentioned problems and detect the holding state of the substrate with high accuracy.

[0026] <Overview of substrate processing system>

[0027] First, refer to Figure 1 , a schematic structure of the substrate processing system 1 according to the embodiment is described. Figure 1 1 is a diagram showing a schematic structure of a substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing device. In order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is set to be the vertical upward direction.

[0028] like Figure 1 As shown, the substrate processing system 1 includes a feeding station 2 and a processing station 3. The feeding station 2 and the processing station 3 are arranged adjacent to each other.

[0029] The loading and unloading station 2 includes a front opening pod (FOUP) loading unit 11 and a conveying unit 12. A plurality of front opening pods H are loaded on the front opening pod loading unit 11, and the plurality of front opening pods H store a plurality of substrates, in the embodiment, semiconductor wafers W (hereinafter referred to as wafers W) in a horizontal state.

[0030] The conveying section 12 is provided adjacent to the front-opening wafer pod loading section 11, and has a substrate conveying device 13 and an interface 14 therein. The substrate conveying device 13 includes a wafer holding mechanism for holding a wafer W. The substrate conveying device 13 is capable of moving in the horizontal and vertical directions and rotating about a vertical axis, and conveys the wafer W between the front-opening wafer pod H and the interface 14 using the wafer holding mechanism.

[0031] The processing station 3 is disposed adjacent to the conveying portion 12. The processing station 3 includes a conveying portion 15 and a plurality of processing units 16. The plurality of processing units 16 are disposed on both sides of the conveying portion 15 in an array.

[0032] The conveying section 15 has a substrate conveying device 17 therein. The substrate conveying device 17 includes a wafer holding mechanism for holding the wafer W. In addition, the substrate conveying device 17 is capable of moving in the horizontal direction and the vertical direction and rotating around the vertical axis, and conveys the wafer W between the interface 14 and the processing unit 16 using the wafer holding mechanism.

[0033] The processing unit 16 performs a predetermined substrate process on the wafer W transported by the substrate transport device 17 .

[0034] In addition, the substrate processing system 1 includes a control device 4. The control device 4 is, for example, a computer, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs for controlling various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.

[0035] In addition, the program may be recorded in a computer-readable storage medium and installed from the storage medium to the storage unit 19 of the control device 4. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0036] In the substrate processing system 1 configured as described above, first, the substrate conveying device 13 of the in-and-out station 2 takes out a wafer W from the front-opening pod H placed on the front-opening pod placement portion 11, and places the taken-out wafer W on the delivery portion 14. The wafer W placed on the delivery portion 14 is taken out from the delivery portion 14 by the substrate conveying device 17 of the processing station 3 and is carried into the processing unit 16.

[0037] After being processed by the processing unit 16, the wafer W sent to the processing unit 16 is sent out from the processing unit 16 by the substrate transfer device 17 and placed in the delivery section 14. Then, the processed wafer W placed in the delivery section 14 is returned to the front-opening wafer pod H of the front-opening wafer pod placement section 11 by the substrate transfer device 13.

[0038] <Structure of Processing Unit>

[0039] Next, refer to Figure 2 , the structure of the processing unit 16 of the implementation method is explained. Figure 2 1 is a schematic diagram showing an example of a specific structure of the processing unit 16. Figure 2 As shown, the processing unit 16 includes a chamber 20 , a substrate processing portion 30 , a liquid supply portion 40 , a recovery cup 50 , a light sensor 60 and a photographing device 70 .

[0040] The chamber 20 accommodates a substrate processing unit 30, a liquid supply unit 40, a recovery cup 50, an optical sensor 60, and an imaging device 70. A fan filter unit (FFU) 21 is provided on the top of the chamber 20. The FFU 21 forms a downward flow in the chamber 20.

[0041] The substrate processing unit 30 includes a substrate holding unit 31, a support unit 32, and a driving unit 33, and performs a predetermined substrate processing on the mounted wafer W. The substrate holding unit 31 horizontally holds the wafer W. The support unit 32 is a member extending in the vertical direction, and the base end is rotatably supported by the driving unit 33, and the front end horizontally supports the substrate holding unit 31. The driving unit 33 rotates the support unit 32 around the vertical axis.

[0042] The substrate processing section 30 rotates the support column 32 using the driving section 33 , thereby rotating the substrate holding section 31 supported by the support column 32 , thereby rotating the wafer W held by the substrate holding section 31 .

[0043] A holding member 31a for holding the wafer W from the side is provided on the upper surface of the substrate holding portion 31 included in the substrate processing portion 30. The wafer W is horizontally held by the holding member 31a in a state slightly separated from the upper surface of the substrate holding portion 31. The wafer W is held in the substrate holding portion 31 in a state where the front side for substrate processing faces upward.

[0044] The substrate holding portion 31 is not limited to holding the substrate by the holding member 31 a, and may hold the wafer W horizontally by, for example, sucking the lower surface of the wafer W. Furthermore, the substrate holding portion 31 may be an electrostatic chuck or the like.

[0045] The liquid supply unit 40 supplies the processing fluid to the wafer W. The liquid supply unit 40 includes nozzles 41a and 41b, an arm 42 that horizontally supports the nozzles 41a and 41b, and a rotation and lifting mechanism 43 that rotates and lifts the arm 42.

[0046] The nozzle 41a is connected to a processing liquid supply source 46a via a valve 44a and a flow regulator 45a. The processing liquid supply source 46a is a tank storing a processing liquid. The processing liquid is used for liquid processing of the wafer W (eg, etching processing, cleaning processing, etc.).

[0047] The nozzle 41b is connected to a DIW supply source 46b via a valve 44b and a flow rate regulator 45b. The DIW supply source 46b is, for example, a tank storing DIW (DeIonized Water). This DIW is used for rinsing of wafers W, for example.

[0048] In addition, Figure 2 In the example of FIG. 1 , an example is shown in which the liquid supply unit 40 supplies the processing liquid and the rinse liquid (DIW) to the wafer W. However, the present invention is not limited to this example, and may also be configured to be able to supply other liquids to the wafer W.

[0049] The recovery cup 50 is arranged to surround the substrate holding portion 31 and collect the processing liquid scattered from the wafer W due to the rotation of the substrate holding portion 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 from the drain port 51. In addition, an exhaust port 52 is formed at the bottom of the recovery cup 50 to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16.

[0050] The optical sensor 60 irradiates light to the wafer W held and rotated by the substrate holding portion 31, and receives reflected light from the wafer W. The optical sensor 60 is disposed, for example, above the peripheral portion of the wafer W, and irradiates light vertically downward to the peripheral portion of the wafer W. Then, the optical sensor 60 receives light reflected from the peripheral portion of the wafer W, and detects the intensity of the reflected light.

[0051] The imaging device 70 is disposed, for example, above the wafer W, and images the wafer W held by the substrate holding portion 31 and processed by the processing fluid from the liquid supply portion 40 .

[0052] <Details of detection processing>

[0053] Next, refer to Figure 3 to Figure 6 , details of the detection processing of the implementation method are explained. Figure 3 4 is a block diagram showing an example of the structure of the control device 4 according to the embodiment. Figure 3 As shown, the control device 4 includes a control unit 18 and a storage unit 19 .

[0054] In addition, the substrate processing unit 30, the liquid supply unit 40, the optical sensor 60 and the imaging device 70 are connected to the control device 4. Figure 3 In addition to the functional units shown, various functional units that a known computer has, such as various input devices, sound output devices, and the like, may be provided.

[0055] The storage unit 19 is implemented by a storage device such as a RAM, a flash memory or other semiconductor memory element, a hard disk, an optical disk or the like. The storage unit 19 includes a reference period variation data storage unit 19a, a captured image storage unit 19b, and a difference data storage unit 19c. Details of these storage units will be described later. In addition, the storage unit 19 stores information used for various processes in the control unit 18.

[0056] The control unit 18 is implemented by, for example, a CPU, an MPU (Micro Processing Unit), a GPU (Graphics Processing Unit), etc., and executes a program stored in the storage unit 19 using a RAM as a work area.

[0057] In addition, the control unit 18 may be realized by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

[0058] The control unit 18 includes a generating unit 18a, a calculating unit 18b, a judging unit 18c, an abnormality handling unit 18d, and a predicting unit 18e, and realizes or executes the functions and effects of the control processing described below. Figure 3 The structure shown may be another structure as long as it is a structure for performing the control processing described later.

[0059] The generating unit 18a irradiates light from the optical sensor 60 to the wafer W held and rotated by the substrate holding unit 31, acquires the intensity change of the reflected light during the rotation of the wafer W, and generates periodic variation data. Figure 4 , the details of the periodic variation data are explained.

[0060] Figure 4 FIG. 1 is a diagram showing an example of periodic variation data of an implementation method. Figure 4 As shown, the periodic variation data of the embodiment is represented by a curve showing the change in the intensity of the reflected light over a whole rotation of the wafer W (ie, within the range of the rotation angle of 0 (deg) to 360 (deg)).

[0061] In addition, Figure 4 3 and 4. The actual measured values ​​measured by the gauge which have been conventionally performed to confirm the holding state of the wafer W are also shown in parallel. The actual measured values ​​measured by the gauge are data obtained by bringing the gauge into contact with the peripheral edge of the wafer W held by the substrate holding portion 31, measuring the height position of the peripheral edge, and measuring the change in the height position of the wafer W over the entire circumference.

[0062] Conventionally, the quality of the holding state of the wafer W is determined based on the actual value measured by the gauge. For example, if the variation in the height position of the peripheral edge of the wafer W is not within a predetermined range, it can be determined that the holding state of the wafer W is poor.

[0063] On the other hand, this method requires that the processing unit 16 be opened and the operator place the gauge against the wafer W inside to perform the operation, which is very laborious and the measurement cannot be performed while the wafer W is being processed.

[0064] Therefore, in the embodiment, the optical sensor 60 provided inside the processing unit 16 is used to generate periodic variation data representing the intensity variation of the reflected light of the wafer W over a whole cycle. Figure 4 As shown, there is a high correlation between the actual value measured by the gauge in the prior art and the periodic variation data of the present invention.

[0065] In addition, in the present invention, based on the periodic variation data, it is possible to detect with high accuracy the minute deflection of the wafer W caused by the deterioration of the holding state throughout the entire circumference of the wafer W. This is because, even when the deflection amount is small, the amount of light reflected vertically upward from the wafer W and incident on the optical sensor 60 decreases at the portion where the wafer W is deflected and tilted.

[0066] In addition, if Figure 4 As shown in Figure 1, in the periodic variation data and the actual values ​​measured by the gauge, three low value areas can be observed, such as Figure 5As shown, this is caused by three recesses Wa formed on the wafer W when the wafer W is supported by the three holding members 31a. Figure 5 1 and 2 are diagrams for explaining a state of a wafer W held by a substrate holding portion 31 according to the embodiment.

[0067] As described above, in the embodiment, regarding the presence or absence and state of the warp (here, the recess Wa) of the wafer W, data including position information up to the warp can be generated as period variation data.

[0068] In the embodiment, the generation unit 18a controls the substrate processing unit 30 to rotate the wafer W within the range of 1 (rpm) to 100 (rpm) while using the optical sensor 60 to measure the change in the intensity of the reflected light over a whole cycle of the wafer W. In this way, the influence of the deflection of the wafer W caused by excessively increasing the rotation speed can be reduced, so that high-precision period variation data can be generated.

[0069] return Figure 3 The calculation unit 18b calculates the difference between the pre-stored reference period variation data and the period variation data generated by the generation unit 18a. The reference period variation data is, for example, the period variation data generated by the generation unit 18a just after the substrate holding unit 31 is returned to a normal state (for example, just after the substrate holding unit 31 is replaced with a new one).

[0070] That is, the difference between the reference period variation data calculated by the calculation unit 18b and the period variation data indicates the difference between the substrate holding unit 31 in the normal state and the holding state of the substrate holding unit 31 at the time when the period variation data is generated. The reference period variation data is stored in the reference period variation data storage unit 19a of the storage unit 19, for example.

[0071] The determination unit 18c determines whether the holding state of the wafer W held by the substrate holding unit 31 is normal based on the periodic variation data generated by the generation unit 18a. For example, the determination unit 18c determines that the holding state of the wafer W is normal when the difference between the reference periodic variation data and the periodic variation data is within a predetermined range.

[0072] On the other hand, when the difference between the reference period variation data and the period variation data is not within the predetermined range, the determination unit 18c determines that the holding state of the wafer W is not normal.

[0073] As described so far, in the embodiment, by determining whether the holding state of the wafer W is good or not based on the period variation data, the holding state of the wafer W can be detected with high accuracy.

[0074] In addition, in an embodiment, the difference between the holding state of the substrate holding part 31 in a normal state and the holding state of the substrate holding part 31 at the measurement time is evaluated based on the difference between the reference periodic variation data and the periodic variation data, thereby enabling the difference between the devices of each of the multiple processing units 16 to be included in the judgment of the quality of the holding state.

[0075] Therefore, according to the embodiment, the holding state of the wafer W can be detected with higher accuracy.

[0076] In the embodiment, the period variation data generated before substrate processing is performed on a certain wafer W may be used as reference period variation data when the calculation unit 18 b performs calculation processing after substrate processing is performed on the same wafer W.

[0077] Thus, deterioration of the holding state that occurs during a predetermined substrate process (eg, a process involving a rapid temperature change) can be detected immediately after the process. Therefore, according to the embodiment, the holding state of the wafer W can be detected with higher accuracy.

[0078] In this case, the period variation data generated before substrate processing for a certain wafer W may be stored as the reference period variation data of the wafer W in the reference period variation data storage unit 19 a of the storage unit 19 .

[0079] When the determination unit 18c determines that the holding state of the wafer W is abnormal, the abnormality handling unit 18d executes various abnormality handling processes.

[0080] The abnormality handling process of the embodiment is, for example, to notify the operator that the holding state of the wafer W in the processing unit 16 is abnormal. Thus, the operator can recognize the abnormal state of the substrate holding portion 31.

[0081] In addition, the abnormality handling process of the embodiment may be, for example, to temporarily return the wafer W to the substrate transport device 17 (see Figure 1 ), and the wafer W is re-held by the substrate holding portion 31. Thus, when the abnormality in the holding state is temporary, the holding state of the target wafer W can be restored to normal.

[0082] Furthermore, when the determination unit 18c determines that the holding state of the wafer W after the substrate processing is abnormal, the abnormality handling unit 18d may store the captured image of the wafer W during the processing. The captured image is, for example, a dynamic image and is stored in the captured image storage unit 19b of the storage unit 19.

[0083] In this case, the determination unit 18c can use the period variation data generated before substrate processing of the target wafer W as reference period variation data when the calculation unit 18b performs calculation processing after substrate processing of the same wafer W is performed.

[0084] Furthermore, the abnormality handling unit 18d may associate the captured images during the substrate processing stored in the captured image storage unit 19b as described above with the log information notifying that the abnormal state has occurred with respect to the same wafer W.

[0085] In this way, for the wafer W determined to be in an abnormal state, the operator can confirm the details of the abnormal state again based on the stored captured images later by storing the captured images during processing in the storage unit 19. In addition, by associating the captured images during substrate processing with the log information notifying the abnormal state, the operator can easily confirm the captured images at the time of the abnormality.

[0086] In addition to the above calculation processing, the calculation unit 18 b calculates the difference between the reference period variation data and the period variation data for each of the plurality of wafers W subsequently fed into the processing unit 16 , and calculates the maximum value of the difference as difference data.

[0087] In this case, the period variation data generated by the generation unit 18a immediately after the substrate holding unit 31 is returned to a normal state (for example, immediately after the substrate holding unit 31 is replaced with a new one) is used as the reference period variation data. Then, the difference data is stored in the difference data storage unit 19c of the storage unit 19, for example, Figure 6 Draw it like that.

[0088] Figure 6 FIG. 1 is a diagram showing an example of difference data in an implementation mode. Figure 6 As shown, the difference data of the embodiment is, for example, plotted in an XY space with time (or the number of processed wafers W) on the horizontal axis and the maximum value of the difference between the reference period variation data and the period variation data on the vertical axis.

[0089] The prediction unit 18e is based on Figure 6 The holding state of the substrate holding portion 31 is predicted by looking at the temporal change of the difference data shown. The prediction unit 18e predicts the holding state of the substrate holding portion 31 by, for example, linear regression analysis.

[0090] For example, in Figure 6 In the example of , the time course of the maximum value of the difference returns to the straight line of the maximum value of the difference = 0 during the period until time T0. Figure 6In the example shown in FIG. 1 , before time T0 , the holding state of the substrate holding portion 31 does not change significantly compared to immediately after the substrate holding portion 31 is returned to the normal state, and it is inferred that a good holding state is maintained.

[0091] On the other hand, after time T0, the time elapse of the maximum value of the difference returns to the straight line L having a slope. Therefore, when the holding state becomes abnormal at time T2, which is the intersection of the straight line L and the upper limit value (or lower limit value) of the maximum value of the difference considered to maintain the holding state well, the prediction unit 18e predicts that it is the time of time T1.

[0092] Thus, in the embodiment, the holding state of the substrate holding unit 31 can be predicted with high accuracy based on the temporal change of the difference data. Therefore, according to the embodiment, based on the obtained prediction, the operator can prepare components such as the substrate holding unit 31 in advance and plan maintenance.

[0093] In the above-described embodiment, the difference between the reference period variation data and the period variation data is calculated for each of the plurality of wafers W successively fed into the processing unit 16, and the maximum value of the difference is calculated as the difference data. However, the present invention is not limited to this example.

[0094] For example, in the present invention, the difference between the reference period variation data and the period variation data may be calculated for each of the plurality of wafers W successively fed into the processing unit 16, and the average value of the difference may be calculated as the difference data.

[0095] Then, the prediction unit 18e may predict the holding state of the substrate holding unit 31 based on the temporal change of the difference data. Thus, the holding state of the substrate holding unit 31 can be predicted with high accuracy.

[0096] In addition, Figure 6 In the example of FIG. 1 , an example is shown in which the prediction unit 18 e predicts the holding state of the substrate holding unit 31 by linear regression analysis, but the present invention is not limited to this example, and various analysis methods can also be used to predict the holding state of the substrate holding unit 31.

[0097] The substrate processing device (substrate processing system 1) of the embodiment includes a substrate holding part 31, a light sensor 60 and a control part 18. The substrate holding part 31 holds the substrate (wafer W) to be processed and rotates it. The light sensor 60 irradiates light to the substrate (wafer W) held and rotated by the substrate holding part 31 and receives reflected light. The control part 18 controls each part. In addition, the control part 18 has a generation part 18a and a judgment part 18c. The generation part 18a irradiates light from the light sensor 60 to the substrate (wafer W) held and rotated by the substrate holding part 31, and obtains the intensity change of the reflected light during the rotation of the substrate (wafer W) to generate periodic variation data. The judgment part 18c judges whether the holding state of the substrate (wafer W) held by the substrate holding part 31 is normal based on the periodic variation data. Thereby, the holding state of the wafer W can be detected with high precision.

[0098] In addition, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the control unit 18 further includes a calculation unit 18b, which calculates the difference between the pre-stored reference period variation data and the period variation data generated by the generation unit 18a. In addition, the judgment unit 18c judges that the holding state of the substrate (wafer W) is normal when the difference is within a prescribed range, and judges that the holding state of the substrate (wafer W) is abnormal when the difference is not within the prescribed range. Thus, the holding state of the wafer W can be detected with higher accuracy.

[0099] In addition, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the reference period variation data is period variation data generated for other substrates held on the substrate holding portion before the substrate (wafer W) held on the substrate holding portion 31 is brought in. Thus, the reference period variation data can be obtained when the substrate holding portion 31 is normal.

[0100] In addition, in the substrate processing device (substrate processing system 1) of the embodiment, when a plurality of substrates (wafers W) are fed one by one, the generating unit 18a generates a separate period variation data for each substrate. In addition, the calculating unit 18b calculates the maximum value of the difference between the plurality of substrates (wafers W) as the difference data. In addition, the control unit 18 further includes a predicting unit 18e, which predicts the holding state of the substrate holding unit 31 based on the time-dependent change of the difference data. Thus, the holding state of the substrate holding unit 31 can be predicted with high accuracy.

[0101] In addition, in the substrate processing device (substrate processing system 1) of the embodiment, when a plurality of substrates (wafers W) are fed one by one, the generating unit 18a generates a separate period variation data for each substrate. In addition, the calculating unit 18b calculates the average value of the differences between the plurality of substrates (wafers W) as the difference data. In addition, the control unit 18 further includes a predicting unit 18e, which predicts the holding state of the substrate holding unit 31 based on the time-dependent change of the difference data. Thus, the holding state of the substrate holding unit 31 can be predicted with high accuracy.

[0102] In addition, in the substrate processing apparatus (substrate processing system 1) of the embodiment, the control unit 18 further includes an abnormality response unit 18d, which performs abnormality response processing when the determination unit 18c determines that the holding state of the substrate (wafer W) is abnormal. Thus, the operator can recognize the abnormal state of the substrate holding unit 31.

[0103] In addition, the substrate processing device (substrate processing system 1) of the embodiment further includes an imaging device 70 for imaging the substrate (wafer W) held by the substrate holding portion 31. In addition, the generating unit 18a generates periodic variation data of the processed substrate (wafer W). In addition, when the judging unit 18c judges that the holding state of the processed substrate (wafer W) is abnormal, the abnormality handling unit 18d saves the image captured during the processing of the substrate. Thus, the operator can re-confirm the details of the defective condition based on the stored image later.

[0104] <Control Processing Flow>

[0105] Next, refer to Figure 7 to Figure 9 , the flow of control processing of the implementation method is explained. Figure 7 1 is a flowchart showing an example of the flow of control processing executed by the substrate processing system 1 according to the embodiment.

[0106] In the control process of the embodiment, first, the control unit 18 holds the wafer W carried into the processing unit 16 by the substrate holding unit 31 (step S101). Then, the control unit 18 performs a holding abnormality detection process for detecting an abnormality in the holding state of the wafer W held by the substrate holding unit 31 (step S102). The details of the holding abnormality detection process will be described later.

[0107] Next, the control unit 18 performs a temporal change detection process for detecting a temporal change in the holding state of the wafer W held by the substrate holding unit 31 (step S103). The details of the temporal change detection process will be described later.

[0108] Next, the control unit 18 supplies a processing liquid and a rinse liquid to the wafer W while rotating the wafer W held by the substrate holding unit 31, thereby performing a predetermined process on the wafer W (step S104).

[0109] In the process of step S104, for example, the control unit 18 controls the substrate processing unit 30, etc. to rotate the wafer W at a predetermined rotation speed, and controls the liquid supply unit 40, etc. to supply the processing liquid onto the wafer W at a predetermined supply amount.

[0110] In addition, the control unit 18 performs a rinse process using DIW on the wafer W after the liquid treatment using the treatment liquid is completed. Furthermore, the control unit 18 performs a drying process such as spin drying on the wafer W after the rinse process is completed.

[0111] Finally, the control section 18 performs a holding abnormality detection process for detecting an abnormality in the holding state of the wafer W held by the substrate holding section 31 (step S105), and ends a series of control processes.

[0112] Figure 8 1 is a flowchart showing an example of the flow of the holding abnormality detection process executed by the substrate processing system 1 according to the embodiment.

[0113] In the holding abnormality detection process, first, the control unit 18 rotates the wafer W at a predetermined rotation speed (eg, in the range of 1 (rpm) to 100 (rpm)) while measuring the peripheral edge of the wafer W using the optical sensor 60 (step S201).

[0114] Next, the control unit 18 generates period variation data of the wafer W based on the measurement result of the optical sensor 60 (step S202 ). Then, the control unit 18 calculates the difference between the pre-stored reference period variation data and the period variation data of the wafer W (step S203 ).

[0115] Next, the control unit 18 determines whether the calculated difference is within a predetermined range (step S204). If the difference is within the predetermined range (step S204, yes), the control unit 18 regards the holding state of the wafer W as normal and ends a series of holding abnormality detection processes.

[0116] On the other hand, when the difference is not within the predetermined range (step S204, No), the control unit 18 regards that the holding state of the wafer W is abnormal and executes various abnormality handling processes (step S205).

[0117] Next, the control unit 18 determines whether the wafer W considered to be abnormal in the holding state has been subjected to a predetermined substrate process (step S206). Then, if the target wafer W has been subjected to the predetermined substrate process (step S206, yes), the control unit 18 stores the captured image of the wafer W that has just been subjected to the (prescribed substrate process) substrate process in the storage unit 19 (step S207), and ends a series of holding abnormality detection processes.

[0118] On the other hand, when the target wafer W has not been subjected to the predetermined substrate processing (step S206, No), the series of holding abnormality detection processing ends.

[0119] Fig. 9 1 is a flowchart showing an example of the flow of the temporal change detection process executed by the substrate processing system 1 according to the embodiment.

[0120] In the temporal change detection process, first, the control unit 18 calculates the maximum value or average value of the difference between the pre-stored reference period variation data and the period variation data generated in the temporal change detection process as difference data (step S301 ).

[0121] Next, the control unit 18 plots the maximum value or average value of the difference between the reference period variation data and the period variation data on a graph such as Figure 6 Then, the control unit 18 performs linear regression analysis on the temporal change of the difference data in the XY space where the maximum value or average value of the difference of the plurality of wafers W is plotted (step S303).

[0122] Next, the control unit 18 determines whether the slope of the straight line generated by the linear regression analysis is statistically significant (step S304). Then, if it is determined that the slope of the straight line generated by the linear regression analysis is statistically significant (step S304, yes), the control unit 18 predicts the timing when the maximum value or average value of the difference deviates from the allowable range (step S305).

[0123] Furthermore, the control unit 18 notifies the operator of the predicted separation timing (step S306), and ends the series of time-varying change detection processing. On the other hand, if it is determined that the slope of the straight line generated by the linear regression analysis is not statistically significant (step S304, no), the series of time-varying change detection processing is ended.

[0124] The substrate processing method of the embodiment includes a holding step (step S101), a generating step (step S202) and a judging step (step S204). In the holding step (step S101), the substrate (wafer W) is held by the substrate holding part 31. In the generating step (step S202), periodic variation data is generated at least one of before and after the substrate (wafer W) is processed. The light sensor 60 that irradiates light and receives reflected light is irradiated to the substrate (wafer W) held and rotated by the substrate holding part 31, and the intensity change of the reflected light during the rotation of the substrate (wafer W) is obtained to generate the periodic variation data. In the judging step (step S204), based on the periodic variation data, it is judged whether the holding state of the substrate (wafer W) held by the substrate holding part 31 is normal. In this way, the holding state of the wafer W can be detected with high precision.

[0125] In addition, the substrate processing method of the embodiment further includes a calculation step (step S203). In the calculation step (step S203), the difference between the pre-stored reference period variation data and the period variation data generated in the generation step (step S202) is calculated. In addition, in the judgment step (step S204), when the difference is within the prescribed range, it is judged that the holding state of the substrate (wafer W) is normal, and when the difference is not within the prescribed range, it is judged that the holding state of the substrate (wafer W) is abnormal. Thus, the holding state of the wafer W can be detected with higher accuracy.

[0126] In addition, in the substrate processing method of the embodiment, the reference period variation data is period variation data generated for other substrates held by the substrate holding portion 31 before the substrate (wafer W) held by the substrate holding portion 31 is brought in. Thus, the reference period variation data can be obtained when the substrate holding portion 31 is normal.

[0127] In addition, in the substrate processing method of the embodiment, in the generating step (step S202), when a plurality of substrates (wafers W) are fed in one by one, a separate periodic variation data is generated for each substrate. In addition, in the calculating step (step S203), the average value of the difference of the plurality of substrates (wafers W) is calculated as the difference data. In addition, the substrate processing method of the embodiment further includes a step (step S305) of predicting the holding state of the substrate holding portion 31 based on the time variation of the difference data. Thus, the holding state of the substrate holding portion 31 can be predicted with high accuracy.

[0128] In addition, the substrate processing method of the embodiment further includes the following step (step S205): when the determination step (step S204) determines that the holding state of the substrate (wafer W) is abnormal, executing abnormality handling processing. Thus, the operator can recognize the abnormal state of the substrate holding part 31.

[0129] The above is a description of the embodiment of the present invention, but the present invention is not limited to the above embodiment, and various changes can be made as long as they do not deviate from the main purpose. For example, in the above embodiment, an example of storing reference period variation data, captured images, difference data, etc. in the storage unit 19 of the control device 4 provided in the substrate processing system 1 is shown, but the present invention is not limited to this example. For example, in the present invention, the reference period variation data, captured images, difference data, etc. can also be stored in other storage devices connected to the control device 4 via a network.

[0130] The embodiments disclosed herein are illustrative and non-restrictive in all aspects. In fact, the above embodiments can be implemented in many ways. In addition, the above embodiments can also be omitted, replaced, and changed in various ways without departing from the scope of the invention and its purpose.

[0131] Description of Reference Numerals

[0132] W Wafer (an example of a substrate)

[0133] 1 Substrate processing system (an example of a substrate processing device)

[0134] 4 Control device

[0135] 16 Processing Units

[0136] 18 Control Department

[0137] 18a Generation

[0138] 18b Computing Department

[0139] 18c Judgment Department

[0140] 18d Abnormal Response Department

[0141] 18e Forecasting Department

[0142] 19 Storage

[0143] 19a Reference period variation data storage unit

[0144] 19b Photographing image storage unit

[0145] 19c Differential data storage unit

[0146] 31 substrate holding portion

[0147] 60 Light Sensor

[0148] 70 Filming device.

Claims

1. A substrate processing device, characterized in that: include: a substrate holding portion that holds and rotates the substrate to be processed, a light sensor that irradiates light to the substrate held and rotated by the substrate holding portion and receives reflected light, The control unit that controls each unit, The control unit includes: a generating unit that irradiates light from the optical sensor to the substrate held and rotated by the substrate holding unit, and acquires intensity changes of reflected light during the rotation of the substrate to generate periodic variation data; and A determination unit determines whether a holding state of the substrate held by the substrate holding unit is normal based on the period variation data.

2. The substrate processing device according to claim 1, characterized in that: The control unit further includes a calculation unit that calculates a difference between pre-stored reference period variation data and the period variation data generated by the generation unit. When the difference is within a predetermined range, the determination unit determines that the holding state of the substrate is normal, and when the difference is not within the predetermined range, the determination unit determines that the holding state of the substrate is abnormal.

3. The substrate processing device according to claim 2, characterized in that: The reference period variation data is period variation data generated for other substrates held by the substrate holding portion before the substrate held by the substrate holding portion is brought in.

4. The substrate processing device according to claim 2 or 3, characterized in that: When a plurality of the substrates are fed one by one, the generating unit generates a separate period variation data for each substrate. The calculation unit calculates the maximum value of the difference among the plurality of substrates as difference data, The control section further includes a prediction section that predicts a holding state of the substrate holding section based on a change over time in the difference data.

5. The substrate processing device according to claim 2 or 3, characterized in that: When a plurality of the substrates are fed one by one, the generating unit generates a separate period variation data for each substrate. The calculation unit calculates an average value of the differences among the plurality of substrates as difference data, The control section further includes a prediction section that predicts a holding state of the substrate holding section based on a change over time in the difference data.

6. The substrate processing device according to any one of claims 1 to 3, characterized in that: The control unit further includes an abnormality handling unit configured to execute an abnormality handling process when the determination unit determines that the holding state of the substrate is abnormal.

7. The substrate processing device according to claim 6, characterized in that: It also includes a photographing device, which photographs the substrate held by the substrate holding portion, The generating unit generates the periodic variation data of the processed substrate, When the determination unit determines that the holding state of the processed substrate is abnormal, the abnormality handling unit stores the captured image of the substrate during processing.

8. A substrate processing method, characterized in that: include: a step of holding a substrate by a substrate holding portion; A step of irradiating light from a photosensor that irradiates light and receives reflected light to the substrate held and rotated by the substrate holding portion, and acquiring intensity changes of the reflected light during the rotation of the substrate to generate periodic variation data, at least one of before and after the substrate is processed; and A step of determining whether a holding state of the substrate held by the substrate holding portion is normal based on the periodic variation data.

9. The substrate processing method according to claim 8, characterized in that: The method further comprises the steps of: calculating the difference between the pre-stored reference period variation data and the period variation data generated in the generating step; In the judging step, when the difference is within a predetermined range, it is judged that the holding state of the substrate is normal, and when the difference is not within the predetermined range, it is judged that the holding state of the substrate is abnormal.

10. The substrate processing method according to claim 9, characterized in that: The reference period variation data is period variation data generated for other substrates held by the substrate holding portion before the substrate held by the substrate holding portion is brought in.

11. The substrate processing method according to claim 9 or 10, characterized in that: In the generating step, when a plurality of substrates are fed in one by one, a separate period variation data is generated for each substrate. In the step of calculating, an average value of the differences among the plurality of substrates is calculated as difference data, The substrate processing method further includes the step of predicting a holding state of the substrate holding portion based on a change over time in the difference data.

12. The substrate processing method according to claim 9 or 10, characterized in that: The following step is also included: when the judging step judges that the holding state of the substrate is abnormal, executing abnormal response processing.

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