Adhesive composition for light irradiation peeling, laminate, and method for producing processed semiconductor substrate or electronic device layer

Abstract

Provided are: a laminate having an adhesive layer that has both an adhesive function and a peeling function in one layer and that can be peeled off by irradiation with light; an adhesive composition that forms a peelable adhesive layer; and a method for producing a semiconductor substrate or an electronic device layer that is processed using the laminate. The present invention relates to a laminate which can firmly bond a support substrate to a semiconductor substrate or an electronic device layer during processing of the semiconductor substrate or the electronic device layer, and which can easily separate the support substrate from the semiconductor substrate or the electronic device layer by light irradiation after processing of the substrate.

Description

Technical Field

[0001] The present invention relates to an adhesive composition for photo-irradiation peeling, a laminate, and a method for producing a processed semiconductor substrate or electronic device layer. Background Art

[0002] With regard to semiconductor wafers that were previously integrated in a two-dimensional plane direction, a semiconductor integration technology that further integrates (stacks) the plane in a three-dimensional direction is pursued for the purpose of further integration. This three-dimensional stacking is a technology that integrates into multiple layers while wiring through silicon vias (TSV). When integrating into multiple layers, the side opposite to the circuit surface formed (i.e., the back side) of each wafer to be integrated is thinned by grinding, and the thinned semiconductor wafers are stacked.

[0003] The semiconductor wafer before thinning (also referred to as wafer here) is bonded to a support body in order to be ground using a grinding device. The bonding at this time must be easy to peel off after grinding, so it is called temporary bonding. The temporary bonding must be easy to disassemble from the support body. When a large force is applied to the disassembly, the thinned semiconductor wafer is sometimes cut or deformed. In order to avoid such a situation, it is easy to disassemble. However, when the back of the semiconductor wafer is ground, it is not preferred that it is detached or offset due to the grinding stress. Therefore, the performance pursued by temporary bonding is: to withstand the stress during grinding and to be easy to disassemble after grinding.

[0004] For example, the following properties are sought: high stress (strong adhesive force) with respect to the planar direction during polishing, and low stress (weak adhesive force) with respect to the longitudinal direction during removal.

[0005] For such bonding and separation processes, methods using laser irradiation have been disclosed (see, for example, Patent Documents 1 and 2). However, with further progress in the semiconductor field in recent years, new technologies related to peeling by irradiation with light such as laser have been sought.

[0006] In addition, in the method of processing a substrate by temporarily bonding a support body, the substrate to be temporarily bonded includes, in addition to the semiconductor substrate for the purpose of thinning as described above, an electronic device layer including a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates.

[0007] Semiconductor packages (electronic components) including semiconductor elements (also called semiconductor chip substrates) have various forms depending on the corresponding sizes, such as WLP (Wafer Level Package) and PLP (Panel Level Package).

[0008] In order to achieve miniaturization of semiconductor packages, it is important to reduce the thickness of the substrate in the assembled components. However, if the thickness of the substrate is reduced, its strength is reduced, and the substrate is easily damaged when manufacturing the semiconductor package. In this regard, it is known that the substrate is temporarily bonded to the support body using an adhesive, and after processing the substrate, the substrate is separated from the support body (for example, refer to patent documents 3 to 5).

[0009] Prior art literature

[0010] Patent Literature

[0011] Patent Document 1: Japanese Patent Application Publication No. 2004-64040

[0012] Patent Document 2: Japanese Patent Application Publication No. 2012-106486

[0013] Patent Document 3: Japanese Patent Application Publication No. 2019-34541

[0014] Patent Document 4: Japanese Patent Application Publication No. 2020-107649

[0015] Patent Document 5: International Publication No. 2021 / 131395 Summary of the invention

[0016] Problems to be solved by the invention

[0017] The above-mentioned patent documents 1 and 2 describe a laminated body, which has two layers, a bonding layer (adhesive layer) and a light conversion layer (also called a separation layer) containing a light absorber, stacked between the semiconductor substrate and the support in order to peel off the semiconductor substrate equivalent to the above-mentioned semiconductor chip from the support by laser irradiation.

[0018] Furthermore, if a layer having both the bonding function of the adhesive layer and the peeling function of peeling the substrate of the separation layer from the support body can be formed in the form of a single layer, the two-layer structure of the adhesive layer and the separation layer can be made into a single layer structure, thereby reducing the number of layers. Therefore, from the perspective of producing a laminated body with a simpler structure, this is ideal.

[0019] Therefore, it is desirable to provide a laminate having an adhesive layer which has both an adhesive function and a peeling function using light and can be peeled by light irradiation, and the adhesive layer can peel a semiconductor substrate and a support.

[0020] In addition, the above-mentioned patent documents 3 and 4 describe a laminated body, which has two layers, an adhesive layer (adhesive layer) and a separation layer, stacked between the electronic device layer and the support body in order to peel off the above-mentioned electronic device layer having multiple semiconductor chip substrates arranged in a sealing resin layer from the support body by laser irradiation.

[0021] However, as described above, from the perspective of reducing the number of layers and producing a laminate with a simpler structure, it is ideal to provide a laminate having a peelable adhesive layer in which a layer having both the adhesive function of an adhesive layer and the peeling function of a separation layer is formed in one layer.

[0022] Patent document 5 describes a laminated body having a peelable adhesive layer in which a layer having both the bonding function of the adhesive layer and the peeling function of the separation layer is formed in one layer. That is, a laminated body is described in which a peelable adhesive layer having both the bonding function and the peeling function is formed between the electronic device layer and the support in order to peel the electronic device layer having a plurality of semiconductor chip substrates arranged in a sealing resin layer from the support by laser irradiation.

[0023] However, the binder resin used in the adhesive composition for forming the adhesive layer described in Patent Document 5 is limited to urethane resins, and Patent Document 5 only describes an adhesive composition containing this specific binder resin and a common pigment or dye.

[0024] In order to further advance the semiconductor field, there has been a constant demand for the development of new adhesive compositions to be used.

[0025] Therefore, the present invention is completed in view of the above situation, and its purpose is to provide a laminate, an adhesive composition for forming the following peelable adhesive layer, and a method for manufacturing a processed semiconductor substrate or electronic device layer using the following laminate, wherein the laminate has an adhesive layer in one layer that has both bonding and peeling functions and can be peeled by light irradiation, and when the semiconductor substrate or the electronic device layer is processed, the laminate can firmly bond the supporting substrate to the semiconductor substrate or the electronic device layer, and after the substrate is processed, the supporting substrate can be easily separated from the semiconductor substrate or the electronic device layer by light irradiation.

[0026] Solutions for solving problems

[0027] The present inventors have conducted intensive studies to solve the above-mentioned technical problems, and as a result, have found that the above-mentioned technical problems can be solved, and have completed the present invention having the following gist.

[0028] That is, the present invention includes the following contents.

[0029] [1] An adhesive composition for photoirradiation peeling, which is used to form the following adhesive layer of the following laminated body, the laminated body comprising: a semiconductor substrate or an electronic device layer, a supporting substrate, and an adhesive layer provided between the semiconductor substrate or the electronic device layer and the supporting substrate, the electronic device layer comprising a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates, and the laminated body is used for: after the adhesive layer absorbs light irradiated from the supporting substrate side, the semiconductor substrate or the electronic device layer and the supporting substrate are peeled off, the adhesive composition containing: a light absorbing compound, an organic resin The light absorbing compound helps the semiconductor substrate or the electronic device layer to be easily peeled off from the supporting substrate by absorbing the light, and the light absorbing compound is a compound having the following structure, or a polyphenol-based compound, wherein the structure is a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, a phenylbenzotriazole structure, and a structure derived from cinnamic acid.

[0030] [2] The adhesive composition according to [1], wherein the light absorbing compound is a compound having a structure represented by any of the following formulas (1) to (8).

[0031]

[0032] (In formulas (1) to (8), R1 to R 13 Each independently represents a halogen atom or a monovalent group.

[0033] X represents a single bond, -O-, -CO-, or -NR 31 -(R 31 represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group), -SO-, -SO2- or -N=N-.

[0034] Y1 represents a single bond or -CO-. When Y1 is a single bond, Y2 represents -O-, -CO- or -NR 32 -(R 32 represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group). When Y1 is -CO-, Y2 represents -CO-.

[0035] n1 is an integer from 0 to 4.

[0036] n2 is an integer from 0 to 5.

[0037] n3 is an integer from 0 to 3.

[0038] n4 is an integer from 0 to 4.

[0039] n5 is an integer from 0 to 4.

[0040] n6 is an integer from 0 to 5.

[0041] n7 is an integer from 0 to 4.

[0042] n8 is an integer from 0 to 4.

[0043] n9 is an integer from 0 to 7.

[0044] n10 is an integer from 0 to 9.

[0045] n11 is an integer from 0 to 9.

[0046] n12 is an integer from 0 to 4.

[0047] n13 is an integer from 0 to 4.

[0048] * indicates a bonding key.

[0049] In R1~R 13 When there are multiple R1 to R 13 Optionally the same or different. )

[0050] [3] The adhesive composition according to [1], wherein the polyphenol compound in the light-absorbing compound is a compound selected from the group consisting of condensed tannins formed by polymerization of compounds having a flavanol skeleton, hydrolyzable tannins formed by ester bonding of aromatic compounds of gallic acid or ellagic acid and sugar, and flavonoids derived from compounds having a flavanone skeleton structure.

[0051] [4] The adhesive composition according to [3], wherein the hydrolyzable tannin is tannic acid represented by the following formula (9).

[0052]

[0053] [5] A laminate comprising: a semiconductor substrate or an electronic device layer, a light-transmitting supporting substrate, and an adhesive layer provided between the semiconductor substrate or the electronic device layer and the supporting substrate, wherein the electronic device layer includes a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates, and the laminate is used for: peeling the semiconductor substrate or the electronic device layer from the supporting substrate after the adhesive layer absorbs light irradiated from the supporting substrate side, wherein the adhesive layer is formed by the adhesive composition described in any one of [1] to [4].

[0054] [6] A method for manufacturing a processed semiconductor substrate or electronic device layer, comprising: step 5A, processing the semiconductor substrate of the stacked body as described in [5]; or step 5B, processing the electronic device layer of the stacked body as described in [5]; and step 6A, separating the semiconductor substrate processed by step 5A from the supporting substrate; or step 6B, separating the electronic device layer processed by step 5B from the supporting substrate.

[0055] [7] The method for manufacturing a processed semiconductor substrate or electronic device layer according to [6], wherein the step 6A or the step 6B includes: irradiating the stacked body with a laser from the support substrate side.

[0056] Effects of the Invention

[0057] According to the present invention, there can be provided a laminate, an adhesive composition for forming a peelable adhesive layer, and a method for manufacturing a processed semiconductor substrate or electronic device layer using the laminate. The laminate has an adhesive layer in one layer that has both bonding and peeling functions and can be peeled off by light irradiation. When the semiconductor substrate or the electronic device layer is processed, the laminate can firmly bond a supporting substrate to the semiconductor substrate or the electronic device layer, and after the substrate is processed, the supporting substrate can be easily separated from the semiconductor substrate or the electronic device layer by light irradiation. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Figure 1 This is a schematic cross-sectional view of an example of a laminate.

[0059] Figure 2 This is a schematic cross-sectional view of another example of the laminate.

[0060] Figure 3 This is a schematic cross-sectional view for explaining a method for producing a laminated body according to another example.

[0061] Figure 4 This is a schematic cross-sectional view for explaining a method for producing a laminated body according to another example.

[0062] Figure 5 This is a schematic cross-sectional view for explaining a method for producing a laminated body according to another example.

[0063] Figure 6 This is a schematic cross-sectional view for explaining a method for producing a laminated body according to another example.

[0064] Figure 7 This is a schematic cross-sectional view for explaining a method for processing a laminated body according to another example.

[0065] Figure 8 This is a schematic cross-sectional view for explaining a method for processing a laminated body according to another example.

[0066] Fig. 9 This is a schematic cross-sectional view for explaining another example of a method for separating a stacked body.

[0067] Fig.10 This is a schematic cross-sectional view for explaining another example of a method for separating a stacked body.

[0068] Fig.11 This is a schematic cross-sectional view for explaining another example of a method for cleaning a laminated body after separation. DETAILED DESCRIPTION

[0069] (Adhesive composition for light irradiation peeling)

[0070] The adhesive composition of the present invention is an adhesive composition for peeling by light irradiation that can be peeled by light irradiation.

[0071] The adhesive composition of the present invention is a composition that can be suitably used to form an adhesive layer for temporary bonding in order to process a semiconductor substrate or an electronic device layer.

[0072] The adhesive composition of the present invention contains a light-absorbing compound, an organic resin, and an organic solvent. The light-absorbing compound helps facilitate the separation of a semiconductor substrate or an electronic device layer and a supporting substrate by absorbing light.

[0073] Furthermore, the adhesive composition of the present invention may contain other components in addition to the light absorbing compound, the organic resin, and the organic solvent.

[0074] The adhesive composition of the present invention can well form an adhesive layer for light irradiation removal that effectively functions as an adhesive layer for temporary adhesion and also effectively functions as a laser release agent layer.

[0075] <Light-absorbing compounds>

[0076] The light absorbing compound of the present invention is a compound having the following structure, or a polyphenol-based compound, wherein the structure is a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, a phenylbenzotriazole structure, and a structure derived from cinnamic acid.

[0077] For the light absorbing compound of the present invention, it is preferred that when the absorption spectrum of the light absorbing compound in the range of 250nm to 800nm ​​is measured, the absorption spectrum has a maximum value of the maximum absorbance between 250nm and 350nm in the range of 250nm to 800nm. For example, the absorption spectrum may have a maximum value between 260nm and 315nm. By having such light absorption characteristics, good peeling properties between the semiconductor substrate or the electronic device layer and the supporting substrate can be achieved.

[0078] The absorption spectrum can be measured using a spectrophotometer (for example, an ultraviolet-visible-near-infrared (UV-Vis-NIR) spectrophotometer).

[0079] As long as the measurement range includes 250 nm to 800 nm, a wider range may be used.

[0080] In the measurement of the absorption spectrum, it is preferable to form a film having a thickness that allows the presence of a local maximum value as a measurement sample. For example, the film thickness of the measurement sample is about 200 nm.

[0081] The light-absorbing compound of the present invention is preferably a compound having a structure represented by any of the following formulae (1) to (8).

[0082]

[0083] (In formulas (1) to (8), R1 to R 13 Each independently represents a halogen atom or a monovalent group.

[0084] X represents a single bond, -O-, -CO-, or -NR 31 -(R 31 represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group), -SO-, -SO2- or -N=N-.

[0085] Y1 represents a single bond or -CO-. When Y1 is a single bond, Y2 represents -O-, -CO- or -NR 32 -(R 32 represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group). When Y1 is -CO-, Y2 represents -CO-.

[0086] n1 is an integer from 0 to 4.

[0087] n2 is an integer from 0 to 5.

[0088] n3 is an integer from 0 to 3.

[0089] n4 is an integer from 0 to 4.

[0090] n5 is an integer from 0 to 4.

[0091] n6 is an integer from 0 to 5.

[0092] n7 is an integer from 0 to 4.

[0093] n8 is an integer from 0 to 4.

[0094] n9 is an integer from 0 to 7.

[0095] n10 is an integer from 0 to 9.

[0096] n11 is an integer from 0 to 9.

[0097] n12 is an integer from 0 to 4.

[0098] n13 is an integer from 0 to 4.

[0099] * indicates a bonding key.

[0100] In R1~R 13 When there are multiple R1 to R 13 Optionally the same or different. )

[0101] As R1~R 13 Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.

[0102] As R1~R 13 The monovalent group in the group may be, for example, an atomic group consisting of two or more atoms, specifically, an optionally substituted alkyl group, an optionally substituted alkoxy group, an optionally substituted aryl group, a hydroxyl group, a nitro group, a cyano group, a carboxyl group, a sulfo group, -N(R 21 )(R 22 )(R 21 and R 22 Each independently represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group) or the like.

[0103] As R1~R 13 Specific examples of the optionally substituted alkyl group include optionally substituted alkyl groups having 1 to 20 carbon atoms. Examples of the substituent include a halogen atom, a hydroxyl group, a carboxyl group, and an alkoxy group.

[0104] As R1~R 13 Specific examples of the optionally substituted alkoxy group include optionally substituted alkoxy groups having 1 to 20 carbon atoms. Examples of the substituent include a halogen atom, a hydroxyl group, a carboxyl group, and an alkyl group.

[0105] As R1~R 13Specific examples of the optionally substituted aryl group include optionally substituted aryl groups having 6 to 20 carbon atoms. Examples of the substituent include a halogen atom, a hydroxyl group, a carboxyl group, an alkyl group, and an alkoxy group.

[0106] As R 21 , R 22 , R 31 and R 32 Specific examples of the optionally substituted alkyl group include R1 to R 13 Specific examples of optionally substituted alkyl are shown in the specific examples of .

[0107] As R 21 , R 22 , R 31 and R 32 Specific examples of the optionally substituted aryl group in include R1 to R 13 Specific examples of optionally substituted aryl are described in detail below.

[0108] Examples of the alkyl group as a substituent include alkyl groups having 1 to 6 carbon atoms.

[0109] Examples of the alkoxy group as a substituent include alkoxy groups having 1 to 6 carbon atoms.

[0110] It should be noted that the "carbon number 1 to 20" in the "optionally substituted alkyl group having 1 to 20 carbon atoms" means the number of carbon atoms excluding the number of carbon atoms in the substituent. The same applies to the "optionally substituted aryl group having 6 to 20 carbon atoms" and the "optionally substituted alkoxy group having 1 to 20 carbon atoms".

[0111] Preferred embodiments of the light-absorbing compound of the present invention include cinnamic acid, 2-(p-toluoyl)benzoic acid, and 2-naphthyloxyacetic acid.

[0112] In addition, the polyphenolic compound in the light-absorbing compound of the present invention is preferably a compound selected from the group consisting of condensed tannins obtained by polymerization of compounds having a flavanol skeleton, hydrolyzable tannins obtained by ester bonding an aromatic compound of gallic acid or ellagic acid with a sugar, and flavonoids derived from compounds having a flavanone skeleton structure.

[0113] The polyphenol compound of the present invention refers to a plant component having a plurality of phenolic hydroxyl groups (hydroxyl groups bonded to an aromatic ring such as a benzene ring or a naphthalene ring) in the molecule.

[0114] The polyphenolic compounds of the present invention include tannins and flavonoids.

[0115] The tannin of the present invention refers to a water-soluble compound derived from plants that reacts with proteins, alkaloids, and metal ions to form a poorly soluble salt by strong bonding. The tannin is an aromatic compound that is commonly found in the plant kingdom and has many phenolic hydroxyl groups.

[0116] The tannin of the present invention includes condensed tannin and hydrolyzable tannin.

[0117] The condensed tannin of the present invention is a compound obtained by polymerizing a compound having a flavanol skeleton represented by the following formula (p).

[0118]

[0119] The hydrolyzable tannin of the present invention is a compound in which an aromatic compound of gallic acid or ellagic acid represented by the following formula (q) and a sugar such as glucose represented by the following formula (r) are ester-bonded.

[0120]

[0121] As a preferred embodiment of the hydrolyzable tannin, tannic acid represented by the following formula (9) can be mentioned.

[0122]

[0123] The flavonoid of the present invention refers to a compound biosynthesized by various modifications of flavanone, which is a type of flavonoid, and for example, refers to a compound derived from a compound having a flavanone skeleton structure represented by the following formula (s).

[0124]

[0125] Preferred embodiments of flavonoids include flavonoids represented by the following formula (10) or (11).

[0126]

[0127] <Organic resin>

[0128] The adhesive composition of the present invention contains a binder component composed of an organic resin.

[0129] By containing the adhesive component, the adhesive layer formed from the adhesive composition of the present invention exhibits excellent adhesiveness (tackiness). The adhesive layer of the present invention exhibits excellent adhesiveness (tackiness), and thus can firmly bond a semiconductor substrate or an electronic device layer to a supporting substrate.

[0130] Thus, the adhesive composition of the present invention shows excellent adhesion (adhesion), so it is particularly preferred that the bonding object is an electronic device layer. Even for an electronic device layer including a plurality of semiconductor chip substrates, if an adhesive layer formed by the adhesive composition of the present invention is used, each semiconductor chip substrate in the electronic device layer can be firmly bonded to the adhesive layer.

[0131] As long as the effects of the present invention are achieved, the type of organic resin is not particularly limited and can be appropriately selected according to the purpose, and examples thereof include poly(meth)acrylic resins, novolac resins, condensed epoxy resins, polyether resins, etc. Among them, from the perspective of firmly bonding the semiconductor chip substrate in the electronic device layer, the organic resin is preferably a poly(meth)acrylic resin.

[0132] In addition, "(meth)acrylic acid" means methacrylic acid and / or acrylic acid.

[0133] As a preferred embodiment of the poly(meth)acrylic acid-based resin, a poly(meth)acrylic acid-based resin having a repeating unit represented by the following formula (I) can be mentioned.

[0134]

[0135] (In formula (I), R 1 represents a hydrogen atom or a methyl group. 2 It represents a hydrogen atom or a chain saturated hydrocarbon group having 1 to 5 carbon atoms.

[0136] Preferred embodiments of the poly(meth)acrylic acid-based resin having a repeating unit represented by the above formula (I) include polyacrylic acid having a repeating unit represented by the following formula (I-1) and polymethyl methacrylate having a repeating unit represented by the following formula (I-2).

[0137]

[0138] <Organic solvents>

[0139] The adhesive composition of the present invention contains an organic solvent.

[0140] Specific examples of the solvent include aliphatic hydrocarbons, aromatic hydrocarbons, ketones, etc., but are not limited to these.

[0141] More specifically, examples of the solvent include hexane, heptane, octane, nonane, decane, undecane, dodecane, isododecane, menthane, limonene, toluene, xylene, mesitylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, and 5-nonanone, but are not limited thereto.

[0142] In addition, for example, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether, propylene glycol monoethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxy-3-methylbutyrate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, and the like can also be mentioned.

[0143] Such solvents may be used alone or in combination of two or more.

[0144] <<Preparation of Adhesive Composition>>

[0145] The adhesive composition of the present invention can be prepared by mixing the light absorbing compound, the organic resin, and the organic solvent.

[0146] The mixing ratio of the light absorbing compound, the organic resin and the organic solvent is not particularly limited as long as the effect of the present invention can be achieved, and can be appropriately selected according to the purpose. For example, the mass ratio of light absorbing compound: organic resin: organic solvent is preferably 1-2.5:1-2.5:5-8, and more preferably 1-1.5:1-1.5:7-8.

[0147] (Laminated body)

[0148] The laminated body of the present invention comprises a semiconductor substrate or an electronic device layer, a supporting substrate, and an adhesive layer for peeling by light irradiation.

[0149] The supporting substrate has light-transmitting properties.

[0150] The adhesive layer for light irradiation peeling is provided between the semiconductor substrate or the electronic device layer and the supporting substrate.

[0151] The laminate is used to separate the semiconductor substrate or the electronic device layer from the supporting substrate after the adhesive layer absorbs light irradiated from the supporting substrate side.

[0152] The adhesive layer for removal by light irradiation is a layer formed of the adhesive composition for removal by light irradiation of the present invention described above.

[0153] The laminate of the present invention is used for temporary bonding for processing a semiconductor substrate or an electronic device layer, and can be suitably used for processing such as thinning a semiconductor substrate or an electronic device layer.

[0154] While the semiconductor substrate is being processed such as thinning, the semiconductor substrate is supported by the support substrate via the adhesive layer. On the other hand, after the semiconductor substrate is processed, the adhesive layer is irradiated with light, and then the support substrate is separated from the semiconductor substrate.

[0155] Furthermore, while the electronic device layer is being processed such as being thinned, the electronic device layer is supported by the support substrate via the adhesive layer. On the other hand, after the electronic device layer is processed, the adhesive layer is irradiated with light, and then the support substrate and the electronic device layer are separated.

[0156] The adhesive layer of the present invention makes it easy to peel off the semiconductor substrate or the electronic device layer and the supporting substrate after irradiation with light. Moreover, after the semiconductor substrate or the electronic device layer and the supporting substrate are peeled off, the residue of the adhesive layer remaining on the semiconductor substrate, the electronic device layer or the supporting substrate can be removed by, for example, a cleaning agent composition for cleaning the semiconductor substrate.

[0157] The wavelength of the light used for stripping is preferably 250 to 600 nm, more preferably 250 to 370 nm. More suitable wavelengths are 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm. The irradiation amount of light required for stripping is an irradiation amount that causes appropriate deterioration of the specific light absorbing compound, such as decomposition.

[0158] The light used for the stripping may be laser light or a non-laser light source such as an ultraviolet lamp.

[0159] The following describes each of the case where the laminated body includes a semiconductor substrate and the case where the laminated body includes an electronic device layer in detail.

[0160] In the following <First Embodiment>, a case where the laminated body has a semiconductor substrate will be described, and in the following <Second Embodiment>, a case where the laminated body has an electronic device layer will be described.

[0161] <First embodiment>

[0162] The laminated body having the semiconductor substrate is used for processing the semiconductor substrate. During the processing of the semiconductor substrate, the semiconductor substrate is bonded to the support substrate via the adhesive layer. After the processing of the semiconductor substrate, the adhesive layer is irradiated with light, and then the semiconductor substrate is separated from the support substrate.

[0163] <<Semiconductor substrate>>

[0164] The main material constituting the entire semiconductor substrate is not particularly limited as long as it can be used for such an application, and examples thereof include silicon, silicon carbide, and compound semiconductors.

[0165] The shape of the semiconductor substrate is not particularly limited, and may be, for example, a disc-shaped semiconductor substrate. It should be noted that the disc-shaped semiconductor substrate does not need to have a completely circular surface shape, and for example, the periphery of the semiconductor substrate may have a straight portion called an orientation flat, or may have a cutout called a notch.

[0166] The thickness of the disk-shaped semiconductor substrate is not particularly limited and may be appropriately determined depending on the intended use of the semiconductor substrate, and is, for example, 500 to 1000 μm.

[0167] The diameter of the disk-shaped semiconductor substrate is not particularly limited and may be appropriately determined depending on the intended use of the semiconductor substrate, and is, for example, 100 to 1000 mm.

[0168] The semiconductor substrate may have a bump. A bump is a protruding terminal.

[0169] In the laminated body, when the semiconductor substrate has the bump, the semiconductor substrate has the bump on the supporting substrate side.

[0170] In a semiconductor substrate, bumps are usually formed on the surface where a circuit is formed. The circuit may be a single layer or a multilayer. There is no particular limitation on the shape of the circuit.

[0171] In the semiconductor substrate, the surface (back surface) opposite to the surface having the bumps is a surface to be processed.

[0172] The material, size, shape, structure, and density of the bumps included in the semiconductor substrate are not particularly limited.

[0173] Examples of the bump include a ball bump, a printed bump, a stud bump, and a plated bump.

[0174] Generally, the height, radius, and pitch of the bumps are appropriately determined based on the conditions that the bump height is about 1 to 200 μm, the bump radius is 1 to 200 μm, and the bump pitch is 1 to 500 μm.

[0175] Examples of materials for the bumps include low melting point solder, high melting point solder, tin, indium, gold, silver, copper, etc. The bumps may be made of a single component or multiple components. More specifically, SnAg bumps, SnBi bumps, Sn bumps, AuSn bumps, and other alloy platings based on Sn may be included.

[0176] Furthermore, the bump may have a stacked structure including a metal layer composed of at least any one of these components.

[0177] An example of a semiconductor substrate is a silicon wafer having a diameter of 300 mm and a thickness of about 770 μm.

[0178] <<Support substrate>>

[0179] The supporting substrate is not particularly limited as long as it is a member that is light-transmissive to the light irradiated to the adhesive layer and can support the semiconductor substrate when the semiconductor substrate is processed, and examples thereof include glass supporting substrates.

[0180] The shape of the support substrate is not particularly limited, and an example thereof may be a disk shape.

[0181] The thickness of the disk-shaped support substrate is not particularly limited and may be appropriately determined according to the size of the semiconductor substrate, etc., but is, for example, 500 to 1000 μm.

[0182] The diameter of the disk-shaped support substrate is not particularly limited and may be appropriately determined according to the size of the semiconductor substrate, etc., but is, for example, 100 to 1000 mm.

[0183] An example of the supporting substrate is a glass wafer having a diameter of 300 mm and a thickness of about 700 μm.

[0184] <<Adhesive layer>>

[0185] The adhesive layer is provided between the support substrate and the semiconductor substrate.

[0186] The adhesive layer is in contact with, for example, the semiconductor substrate or the supporting substrate.

[0187] The adhesive layer is formed using the adhesive composition for peeling by light irradiation of the present invention described above.

[0188] The adhesive composition of the present invention can be suitably used to form an adhesive layer of a laminate comprising: a semiconductor substrate, a support substrate, and an adhesive layer provided between the semiconductor substrate and the support substrate. The laminate is used to peel the semiconductor substrate and the support substrate after the adhesive layer absorbs light irradiated from the support substrate side.

[0189] One of the characteristics of the adhesive layer obtained from the adhesive composition of the present invention is that the semiconductor substrate and the supporting substrate can be easily peeled off after light irradiation.

[0190] The thickness of the adhesive layer is not particularly limited and is generally 1 to 150 μm. From the viewpoint of maintaining film strength, it is preferably 10 μm or more, more preferably 20 μm or more, and further preferably 30 μm or more. From the viewpoint of avoiding unevenness caused by a thick film, it is preferably 150 μm or less, more preferably 100 μm or less, further preferably 80 μm or less, and further preferably 70 μm or less.

[0191] The method for forming an adhesive layer from the adhesive composition is described in detail in the description of "Method for Producing Laminated Body of First Embodiment" described below.

[0192] Hereinafter, the structure of the laminated body according to the first embodiment will be described using the drawings.

[0193] Figure 1 A schematic cross-sectional view showing an example of a laminated body.

[0194] Figure 1 The laminated body includes a semiconductor substrate 1, an adhesive layer 2, and a support substrate 3 in this order.

[0195] The adhesive layer 2 is provided between the semiconductor substrate 1 and the support substrate 3. The adhesive layer 2 is in contact with the semiconductor substrate 1 and the support substrate 3.

[0196] <<Method for producing laminated body according to first embodiment>>

[0197] The laminate of the present invention can be manufactured, for example, by the following method, which comprises: a first step, applying the adhesive composition on the surface of any one of the above-mentioned semiconductor substrate and the above-mentioned supporting substrate, and heating it if necessary to form an adhesive coating layer; and a second step, laminating the semiconductor substrate and the supporting substrate together via the adhesive coating layer, while performing at least any one of a heating treatment and a decompression treatment, while laminating the semiconductor substrate, the adhesive coating layer and the supporting substrate.

[0198] When the second step is described in more detail, the steps of the following embodiment (i) or the following embodiment (ii) can be cited.

[0199] (i) When the adhesive composition is coated on the surface of a semiconductor substrate, the adhesive coating layer of the semiconductor substrate and the supporting substrate are subjected to at least one of a heating treatment and a pressure reduction treatment while a load in the thickness direction of the semiconductor substrate and the supporting substrate is applied to make them closely attached, and then a post-heating treatment is performed, thereby forming a laminate.

[0200] (ii) When the adhesive composition is coated on the surface of a supporting substrate, the adhesive coating layer of the supporting substrate and the semiconductor substrate are subjected to at least one of a heating treatment and a pressure reduction treatment while a load in the thickness direction of the semiconductor substrate and the supporting substrate is applied to make them closely attached, and then a post-heating treatment is performed, thereby forming a laminate.

[0201] The coating method is not particularly limited, but is usually a spin coating method. It is also possible to form a coating film separately by a spin coating method or the like, and to attach the coating film in a sheet form as the adhesive coating layer.

[0202] The heating temperature of the applied adhesive composition varies depending on the type and amount of the components constituting the adhesive composition, the boiling point of the solvent used, the desired thickness of the adhesive layer, etc., and therefore cannot be generally specified, but is usually 80 to 200°C, and the heating time is usually 30 seconds to 10 minutes.

[0203] Heating can be performed using a hot plate, an oven, or the like.

[0204] The thickness of the adhesive coating layer obtained by applying the adhesive composition and heating it if necessary is generally about 1 to 150 μm, and is appropriately determined so as to finally be within the above-mentioned thickness range of the adhesive layer.

[0205] In the present invention, the semiconductor substrate and the support substrate can be combined in a manner that they are in contact with the adhesive layer, and a load in the thickness direction of the semiconductor substrate and the support substrate is applied to make the two layers close to each other while performing a heating treatment or a decompression treatment or both, and then a post-heating treatment is performed, thereby obtaining the laminate of the present invention. It should be noted that the treatment conditions of any of the heating treatment, the decompression treatment, and the combination of the two are appropriately determined based on various situations such as the specific composition of the adhesive composition, the film thickness of the obtained film, and the bonding strength to be obtained.

[0206] From the viewpoint of removing the solvent from the composition and softening the adhesive coating layer, the heat treatment is usually appropriately determined within the range of 20 to 150° C. Preferably, it is 130° C. or less, and more preferably, it is 90° C. or less. The heating time is appropriately determined according to the heating temperature and the type of adhesive, and is usually 30 seconds or more, preferably 1 minute or more, from the viewpoint of reliably achieving appropriate bonding, and is usually 10 minutes or less, preferably 5 minutes or less, from the viewpoint of suppressing the deterioration of the adhesive layer and other components.

[0207] The reduced pressure treatment may be carried out by exposing the adhesive coating layer to a gas pressure of 10 to 10000 Pa. The time for the reduced pressure treatment is usually 1 to 30 minutes.

[0208] The load in the thickness direction of the semiconductor substrate and the support substrate is not particularly limited as long as it does not adversely affect the semiconductor substrate and the support substrate and the two layers therebetween and allows them to be firmly adhered to each other, but is usually in the range of 10 to 1000N.

[0209] From the viewpoint of achieving a sufficient curing speed, the post-heating temperature is preferably 120° C. or higher, and from the viewpoint of preventing deterioration of the substrate and each layer, the post-heating temperature is preferably 260° C. or lower.

[0210] From the perspective of achieving proper bonding between the substrate and the layers constituting the laminate, the post-heating time is usually more than 1 minute, preferably more than 5 minutes. From the perspective of suppressing or avoiding the adverse effects of excessive heating on the layers, the post-heating time is usually less than 180 minutes, preferably less than 120 minutes.

[0211] Heating can be performed using a hot plate, an oven, etc. When post-heating is performed using a hot plate, the semiconductor substrate and the support substrate of the stack can be heated with either side facing downward. From the perspective of achieving appropriate peeling with good reproducibility, post-heating is preferably performed with the semiconductor substrate facing downward.

[0212] <Second Implementation Method>

[0213] The laminate having the electronic device layer is used for processing the electronic device layer. During the processing of the electronic device layer, the electronic device layer is bonded to the support substrate via the adhesive layer. After the processing of the electronic device layer, the adhesive layer is irradiated with light, and then the electronic device layer is separated from the support substrate.

[0214] <<Electronic device layer>>

[0215] The electronic device layer refers to a layer having electronic devices, and in the present invention, refers to a layer in which a plurality of semiconductor chip substrates are buried in a sealing resin, that is, refers to a layer including a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates.

[0216] Here, "electronic device" refers to a component that constitutes at least a part of an electronic component. There is no particular limitation on the electronic device, and it can be an electronic device in which various mechanical structures and circuits are formed on the surface of a semiconductor substrate. The electronic device is preferably a composite of a component composed of a metal or semiconductor and a resin that seals or insulates the component. The electronic device can be an electronic device in which the redistribution layer and / or semiconductor element or other element described later is sealed or insulated with a sealing material or an insulating material, and has a single-layer or multi-layer structure.

[0217] <<Support substrate>>

[0218] As the supporting substrate, there can be exemplified the same supporting substrate as that described in the column of <<Supporting substrate>> in the <First embodiment> described above.

[0219] <<Adhesive layer>>

[0220] The adhesive layer is formed using the adhesive composition for peeling by light irradiation of the present invention described above.

[0221] The details of the adhesive layer are as described in the column of the above-mentioned <<Adhesive layer>> in the above-mentioned <First embodiment>.

[0222] The configuration of the second embodiment will be described below using the drawings.

[0223] Figure 2 A schematic cross-sectional view showing another example of the laminated body.

[0224] Figure 2 The laminated body includes a supporting substrate 3, an adhesive layer 2, and an electronic device layer 6 in this order.

[0225] The electronic device layer 6 includes a plurality of semiconductor chip substrates 4 and a sealing resin 5 as a sealing material disposed between the semiconductor chip substrates 4 .

[0226] The adhesive layer 2 is provided between the support substrate 3 and the electronic device layer 6. The adhesive layer 2 is in contact with the support substrate 3 and the electronic device layer 6.

[0227] <<Method for producing laminated body according to second embodiment>>

[0228] The laminate of the present invention can be manufactured, for example, by the following method, which includes: a first step, applying the adhesive composition on the surface of the above-mentioned supporting substrate, and heating it if necessary to form an adhesive coating layer; a second step, placing a semiconductor chip substrate on the adhesive coating layer, and bonding the semiconductor chip substrate to the adhesive coating layer while performing at least any one of a heating treatment and a decompression treatment; a third step, curing the adhesive coating layer by post-heating it to form an adhesive layer; and a fourth step, sealing the semiconductor chip substrate fixed on the adhesive layer with a sealing resin.

[0229] When the second step is described in more detail, for example, the step of the following embodiment (iii) can be cited.

[0230] (iii) After applying the adhesive composition on the surface of the supporting substrate, the semiconductor chip substrate is placed on the adhesive coating layer, and a load is applied in the thickness direction of the semiconductor chip substrate and the supporting substrate to make them closely fit while performing at least one of a heating treatment and a pressure reduction treatment, thereby bonding the semiconductor chip substrate to the adhesive coating layer.

[0231] It should be noted that the post-heating treatment of the adhesive coating layer specified in the third step to cure it and the step of forming the adhesive layer can be performed after the semiconductor chip substrate is bonded to the adhesive coating layer in the second step, or can be performed together with the second step. For example, the semiconductor chip substrate can be placed on the adhesive coating layer, and the adhesive coating layer can be heated to cure while applying a load in the thickness direction of the semiconductor chip substrate and the supporting substrate, thereby performing the close bonding of the semiconductor chip substrate and the adhesive coating layer and curing from the adhesive coating layer to the adhesive layer at the same time, and bonding the adhesive layer to the semiconductor chip substrate.

[0232] The coating method, the heating temperature of the applied adhesive composition, the heating method, and the like are as described in the above-mentioned <<Method for producing a laminated body according to the first embodiment>> of the above-mentioned <First embodiment>.

[0233] The method for producing the laminated body according to the second embodiment will be described below in more detail with reference to the drawings.

[0234] like Figure 3 As shown, the adhesive composition is applied on the supporting substrate 3 to form the adhesive coating layer 2'.

[0235] Then, if Figure 4 As shown, the semiconductor chip substrate 4 is placed on the support substrate 3 via the adhesive coating layer 2 ′, and the semiconductor chip substrate 4 and the adhesive coating layer 2 ′ are bonded together.

[0236] Then, if Figure 5 As shown, the adhesive coating layer 2 ′ is cured to form the adhesive layer 2 , and the semiconductor chip substrate 4 is fixed to the adhesive layer 2 .

[0237] Then, if Figure 6 As shown in FIG. 1 , the semiconductor chip substrate 4 fixed on the adhesive layer 2 is sealed using a sealing resin 5. Figure 6 In the embodiment, a plurality of semiconductor chip substrates 4 temporarily bonded to a support substrate 3 via an adhesive layer 2 are sealed with a sealing resin 5. An electronic device layer 6 having semiconductor chip substrates 4 and sealing resin 5 disposed between the semiconductor chip substrates 4 is formed on the adhesive layer 2, so that the electronic device layer 6 becomes a base material layer in which a plurality of semiconductor chip substrates are embedded in the sealing resin.

[0238] <<<Sealing process>>>

[0239] The semiconductor chip substrate 4 is sealed using a sealing material.

[0240] As a sealing material for sealing the semiconductor chip substrate 4, a member capable of insulating or sealing a member made of metal or semiconductor is used.

[0241] In the present invention, a resin composition is used as the sealing material, for example. The type of the sealing resin is not particularly limited as long as it can seal and / or insulate a metal or a semiconductor, and for example, epoxy resins or silicone resins are preferably used.

[0242] The sealing material may contain other components such as fillers in addition to the resin component. Examples of the filler include spherical silica particles.

[0243] In the sealing process, the sealing resin heated to, for example, 130 to 170° C. is supplied to the adhesive layer 2 in a manner that maintains a high viscosity and covers the semiconductor chip substrate 4, and compression molding is performed, thereby forming a layer formed of the sealing resin 5 on the adhesive layer 2. At this time, the temperature condition is, for example, 130 to 170° C. In addition, the pressure applied to the semiconductor chip substrate 4 is, for example, 50 to 500 N / cm 2 .

[0244] (Method for manufacturing processed semiconductor substrate or electronic device layer)

[0245] The present invention also provides a method for manufacturing a processed semiconductor substrate or a method for manufacturing a processed electronic device layer.

[0246] The "processed semiconductor substrate manufacturing method" uses the laminate described in the column of the above <First Embodiment> of the above (laminated body). In addition, the "processed electronic device layer manufacturing method" uses the laminate described in the column of the above <Second Embodiment> of the above (laminated body).

[0247] The “method for producing a processed semiconductor substrate” will be described in the following <Third Embodiment>, and the “method for producing a processed electronic device layer” will be described in the following <Fourth Embodiment>.

[0248] <Third Implementation Plan>

[0249] The method for manufacturing a processed semiconductor substrate of the present invention includes the following step 5A and the following step 6A.

[0250] Here, step 5A is a step of processing the semiconductor substrate in the stacked body described in the above-mentioned column of <First Embodiment>.

[0251] In addition, step 6A is a step of separating the semiconductor substrate processed in step 5A from the support substrate.

[0252] In the 5A step, the processing performed on the semiconductor substrate refers to, for example, processing on the opposite side of the circuit surface of the wafer, and the wafer thinning by grinding the back side of the wafer can be cited. Then, for example, through silicon vias (TSV) are formed, and then the thinned wafer is peeled off from the supporting substrate to form a stack of wafers for three-dimensional mounting. In addition, for example, the formation of the back electrode of the wafer is also performed before and after the three-dimensional mounting. In the thinning and TSV processes of the wafer, heat of about 250 to 350°C is applied in a state bonded to the supporting substrate. The stack of the present invention usually includes an adhesive layer and has heat resistance to the load.

[0253] It should be noted that the processing is not limited to the above processing, and includes, for example, a semiconductor component mounting process when temporary bonding with a support substrate is performed in order to support a base material for mounting a semiconductor component.

[0254] In step 6A, the method of separating (peeling off) the semiconductor substrate from the supporting substrate includes, but is not limited to, mechanical peeling using a tool having a sharp portion after irradiating the adhesive layer with light, peeling by tearing between the supporting body and the semiconductor chip, etc.

[0255] By irradiating the adhesive layer with light from the support substrate side, the adhesive layer is altered (eg, separated or decomposed) as described above, and then, for example, one of the substrates is pulled up to easily separate the semiconductor substrate from the support substrate.

[0256] The irradiation of the adhesive layer with light does not necessarily need to be performed on the entire area of ​​the adhesive layer. Even if the areas irradiated with light and the areas not irradiated with light are mixed, as long as the peeling ability of the adhesive layer as a whole is sufficiently improved, the semiconductor substrate can be separated from the supporting substrate by a slight external force such as pulling up the supporting substrate. The ratio and positional relationship of the areas irradiated with light and the areas not irradiated with light vary depending on the type of adhesive used, its specific composition; the thickness of the adhesive layer; the intensity of the irradiated light, etc., but if a person skilled in the art is skilled in the art, appropriate conditions can be set without excessive experiments. Due to such a situation, according to the method for manufacturing a processed semiconductor substrate of the present invention, for example, when the supporting substrate of the stacked body used is light-transmissive, the light irradiation time can be shortened when peeling is performed by irradiating light from the supporting substrate side. As a result, not only can an improvement in throughput be expected, but also physical stress used for peeling can be avoided, and the semiconductor substrate can be easily and efficiently separated from the supporting substrate only by irradiation with light.

[0257] Generally, the irradiation dose of light used for peeling is 50 to 3000 mJ / cm 2 The irradiation time is appropriately determined according to the wavelength and the irradiation amount.

[0258] The wavelength of the light used for stripping is preferably 250 to 600 nm, and more preferably 250 to 370 nm, as described above. More suitable wavelengths are 308 nm, 343 nm, 355 nm, 365 nm, or 532 nm. The irradiation amount of light required for stripping is an irradiation amount that causes appropriate deterioration of the specific light absorbing compound, such as decomposition.

[0259] The light used for the stripping may be laser light or a non-laser light source such as an ultraviolet lamp.

[0260] The cleaning composition may be sprayed on the surface of at least any one of the separated semiconductor substrate and the supporting substrate, or the separated semiconductor substrate or the supporting substrate may be immersed in the cleaning composition to clean the substrate.

[0261] Alternatively, the surface of a processed semiconductor substrate or the like may be cleaned using a removal tape or the like.

[0262] The constituent elements and method elements related to the above-mentioned steps of the method for manufacturing a processed semiconductor substrate of the present invention may be variously modified without departing from the gist of the present invention.

[0263] The method for producing a processed semiconductor substrate of the present invention may include steps other than the above-mentioned steps.

[0264] In the laminate of the present invention, the semiconductor substrate and the support substrate are temporarily bonded appropriately and releasably by the adhesive layer, so that, for example, when the support substrate is light-transmissive, the semiconductor substrate and the support substrate can be easily separated by irradiating the adhesive layer with light from the support substrate side of the laminate. Usually, the peeling is performed after the semiconductor substrate of the laminate is processed.

[0265] <Fourth Implementation Plan>

[0266] The method for producing a processed electronic device layer of the present invention includes the following step 5B and the following step 6B.

[0267] Here, step 5B is a step of processing the electronic device layer in the laminate described in the section of the above-mentioned <Second Embodiment>.

[0268] In addition, step 6B is a step of separating the electronic device layer processed in step 5B from the supporting substrate.

[0269] Examples of the processing performed on the electronic device layer in step 5B include a grinding step and a wiring layer forming step.

[0270] <<Grinding process>>

[0271] The grinding step is a step of grinding the resin portion of the sealing resin 5 layer in the electronic device layer 6 so that a portion of the semiconductor chip substrate 4 is exposed after the above-mentioned sealing step.

[0272] Grinding of sealing resin parts, for example Figure 7 As shown, this is performed by grinding the sealing resin 5 layer to a thickness substantially the same as that of the semiconductor chip substrate 4 .

[0273] <<Wiring layer formation process>>

[0274] The wiring layer forming step is a step of forming a wiring layer on the exposed semiconductor chip substrate 4 after the above-mentioned grinding step.

[0275] exist Figure 8 In the embodiment, a wiring layer 7 is formed on an electronic device layer 6 including a semiconductor chip substrate 4 and a sealing resin 5 layer.

[0276] The wiring layer 7 is also called RDL (Redistribution Layer), which is a thin-film wiring body that constitutes wiring connected to the substrate, and can have a single-layer or multi-layer structure. The wiring layer can be made of a conductor (such as aluminum, copper, titanium, nickel, gold, silver and other metals and silver-tin alloys) on a dielectric (silicon oxide (SiO X ), photosensitive resins such as photosensitive epoxy resins, etc.) form a layer of wiring between them, but is not limited to this.

[0277] As a method of forming the wiring layer 7 , for example, the following method can be cited.

[0278] First, silicon oxide (SiO X ), photosensitive resin and other dielectric layers. The dielectric layer composed of silicon oxide can be formed, for example, by sputtering, vacuum evaporation, etc. The dielectric layer formed of the photosensitive resin can be formed, for example, by applying the photosensitive resin on the layer of the sealing resin 5 by spin coating, dipping, roller blade, spray coating, slit coating, etc.

[0279] Next, wiring is formed on the dielectric layer using a conductor such as a metal. As a method for forming wiring, for example, a known semiconductor process method such as photolithography (resist photolithography) or etching can be used. Examples of such photolithography include photolithography using a positive resist material and photolithography using a negative resist material.

[0280] In the method for manufacturing a laminated body according to the fourth embodiment, bumps may be further formed or components may be mounted on the wiring layer 7. The components may be mounted on the wiring layer 7 using, for example, a chip mounter or the like.

[0281] The laminated body of the fourth embodiment may be a laminated body produced by a process based on a fan-out technology in which terminals provided on a semiconductor chip substrate are mounted on a wiring layer extending outside a chip region.

[0282] In step 6B, the method of separating (peeling) the electronic device layer from the supporting substrate includes, but is not limited to, mechanical peeling using a tool with a sharp portion after irradiating the adhesive layer with light, peeling by tearing between the supporting body and the electronic device layer, etc.

[0283] By irradiating the adhesive layer with light from the support substrate side, the adhesive layer is degraded (eg, separated or decomposed) as described above, and then, for example, one of the substrates is pulled up to easily separate the electronic device layer from the support substrate.

[0284] Figure 9-10 is a schematic cross-sectional view for explaining a method for separating a laminated body. Fig.11 This is a schematic cross-sectional view for explaining a method for cleaning a laminated body after separation. Figures 9 to 11 , which can illustrate an embodiment of a method for manufacturing a semiconductor package (electronic component).

[0285] like Fig. 9 As shown, the step of separating the laminated body is a step of irradiating the adhesive layer 2 with light (arrow) via the supporting substrate 3 to modify the adhesive layer 2 , thereby separating the electronic device layer 6 from the supporting substrate 3 .

[0286] After the adhesive layer 2 is irradiated with light (arrow) to deteriorate the adhesive layer 2, Fig.10 As shown, the support substrate 3 is separated from the electronic device layer 6 .

[0287] The conditions and method of irradiating the adhesive layer with light are as described in the above-mentioned section of <Third Embodiment>.

[0288] The substrate may be cleaned by spraying the cleaning composition on the surface of at least any one of the separated electronic device layer and the supporting substrate, or by immersing the separated electronic device layer or the supporting substrate in the cleaning composition.

[0289] Alternatively, the surface of the processed electronic device layer or the like may be cleaned using a removal tape or the like.

[0290] For example, in Fig.10 In the embodiment, after the separation step, the adhesive layer 2 is attached to the electronic device layer 6. By using a cleaning agent composition such as an acid or an alkali, the adhesive layer 2 is decomposed and removed. By removing the adhesive layer, the following can be appropriately obtained: Fig.11The processed electronic device layer (electronic component) is shown.

[0291] The constituent elements and method elements related to the above-mentioned steps of the method for producing a processed electronic device layer of the present invention may be variously modified without departing from the gist of the present invention.

[0292] The method for producing a processed electronic device layer of the present invention may include steps other than the above-mentioned steps.

[0293] In the laminate of the present invention, the electronic device layer and the supporting substrate are temporarily bonded appropriately and releasably by the adhesive layer, so that, for example, when the supporting substrate is light-transmissive, the electronic device layer and the supporting substrate can be easily separated by irradiating light to the adhesive layer from the supporting substrate side of the laminate. Usually, the peeling is performed after the electronic device layer of the laminate is processed.

[0294] Example

[0295] Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to the following Examples. The apparatus used is as follows.

[0296] [Device]

[0297] (1) Mixer: ARE-500, a rotary and revolving mixer manufactured by THINKY Co., Ltd.

[0298] (2) Viscometer: TVE-22H rotary viscometer manufactured by Toki Sangyo Co., Ltd.

[0299] (3) Vacuum bonding device: manual bonding machine manufactured by SUSS MicroTec Co., Ltd.

[0300] (4) Laser irradiation device: NC-LD300-EXC manufactured by OPTEK Corporation.

[0301] (5) Pasting device: manufactured by Ayumi Industry Co., Ltd.

[0302] [1] Preparation of composition

[0303] [Preparation Example 1]

[0304] In a 100 mL glass bottle, 10 g of polyacrylic acid (molecular weight 450,000, manufactured by Sigma Aldrich) and 90 g of propylene glycol monomethyl ether (manufactured by Tokyo Chemical Industry) were added and stirred to prepare a composition (1).

[0305] [Preparation Example 2]

[0306] In a 100 mL glass bottle, 18 g of tannic acid (produced by Kanto Chemical), 2 g of polyacrylic acid (molecular weight 450,000, produced by Sigma Aldrich), and 80 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry) were added and stirred to prepare a composition (2).

[0307] [Preparation Example 3]

[0308] In a 100 mL glass bottle, 7 g of tannic acid (produced by Kanto Chemical), 3 g of polyacrylic acid (molecular weight 450,000, produced by Sigma Aldrich), and 90 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry) were added and stirred to prepare a composition (3).

[0309] [Preparation Example 4]

[0310] In a 100 mL glass bottle, 5 g of tannic acid (manufactured by Kanto Chemical), 5 g of polyacrylic acid (molecular weight 450,000, manufactured by Sigma Aldrich), and 90 g of propylene glycol monomethyl ether (manufactured by Tokyo Chemical Industry) were added and stirred to prepare a composition (4).

[0311] [Preparation Example 5]

[0312] In a 100 mL glass bottle, 18 g of tannic acid (produced by Kanto Chemical Industry), 2 g of polymethyl methacrylate (molecular weight 133,300, produced by Tokyo Chemical Industry), and 80 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry) were added and stirred to prepare a composition (5).

[0313] [Preparation Example 6]

[0314] In a 100 mL glass bottle, 14 g of tannic acid (produced by Kanto Chemical), 6 g of polymethyl methacrylate (molecular weight 133,300, produced by Tokyo Chemical Industry), and 80 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry) were added and stirred to prepare a composition (6).

[0315] [Preparation Example 7]

[0316] In a 100 mL glass bottle, 10 g of tannic acid (produced by Kanto Chemical Industry), 10 g of polymethyl methacrylate (molecular weight 133,300, produced by Tokyo Chemical Industry), and 80 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry) were added and stirred to prepare a composition (7).

[0317] [Preparation Example 8]

[0318] In a 100 mL glass bottle, 4.5 g of cinnamic acid (produced by Tokyo Chemical Industry), 10.5 g of polyacrylic acid (molecular weight 450,000, produced by Sigma Aldrich), and 85 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry) were added and stirred to prepare a composition (8).

[0319] [Preparation Example 9]

[0320] In a 100 mL glass bottle, 4.5 g of 2-(p-toluoyl)benzoic acid (produced by Tokyo Chemical Industry Co., Ltd.), 10.5 g of polyacrylic acid (molecular weight 450,000, produced by Sigma Aldrich) and 85 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry Co., Ltd.) were added and stirred to prepare a composition (9).

[0321] [Preparation Example 10]

[0322] In a 100 mL glass bottle, 4.5 g of 2-naphthyloxyacetic acid (produced by Tokyo Chemical Industry), 10.5 g of polyacrylic acid (molecular weight 450,000, produced by Sigma Aldrich), and 85 g of propylene glycol monomethyl ether (produced by Tokyo Chemical Industry) were added and stirred to prepare a composition (10).

[0323] [Preparation Example 11]

[0324] The adhesive composition (A) used in Example 1 was prepared as follows.

[0325] In a 600 mL stirring container for a stirrer, 80 g of an MQ resin containing polysiloxane and a vinyl group (manufactured by Wacker Chemie) as the polyorganosiloxane (a1), 2.52 g of a SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 100 mPa·s as the polyorganosiloxane (a2), 5.89 g of a SiH group-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 70 mPa·s as the polyorganosiloxane (a2), and 0.22 g of 1-ethynylcyclohexanol (manufactured by Wacker Chemie) as a polymerization inhibitor (A3) were added, and the mixture was stirred for 5 minutes using a stirrer.

[0326] To the obtained mixture, 3.96 g of a mixture obtained by stirring for 5 minutes with a stirrer was added 0.147 g of a platinum catalyst (manufactured by Wacker Chemie) as a platinum group metal catalyst (A2) and 5.81 g of a vinyl-containing linear polydimethylsiloxane (manufactured by Wacker Chemie) having a viscosity of 1000 mPa·s as a polyorganosiloxane (a1), and the mixture was stirred for 5 minutes with a stirrer.

[0327] Finally, the obtained mixture was filtered through a 300-mesh nylon filter to obtain an adhesive composition (A). The viscosity of the adhesive measured with a viscometer was 10,000 mPa·s.

[0328] In order to confirm whether the adhesive layer formed using the adhesive composition for photo-irradiation removability of the present invention can be easily removed by laser irradiation, a laminate described in Example 1 below was prepared and the laser irradiation test described in Example 2 below was carried out.

[0329] [Example 1] Preparation of laminate

[0330] The adhesive composition (A) was applied to a 100 mm silicon wafer (thickness: 500 μm) as a wafer on the device side by a spin coater to form an adhesive composition layer (A) of 30 μm. A 100 mm glass wafer (EAGLE-XG, manufactured by Corning, thickness 500 μm) was prepared as a wafer (support) on the carrier side, and the above-mentioned compositions (1) to (10) were applied by a spin coater, and heated on a 90°C hot plate for 90 seconds to form composition layers (1) to (10) of 2.5 μm. The adhesive composition layer (A) and the composition layers (1) to (10) were laminated in a vacuum laminating device in such a manner as to sandwich them, thereby producing a laminate. Then, the device side wafer was heated on a hot plate at 200°C for 10 minutes with the wafer facing downward to cure each composition layer, thereby obtaining a laminate (1) to (10).

[0331] The laminates using the composition layers (1) to (10) correspond to the laminates (1) to (10), respectively.

[0332] [Example 2] Laser irradiation test

[0333] A laser irradiation device was used to irradiate the glass wafer at an output of 250 mJ / cm 2 The obtained laminates (1) to (10) were irradiated with laser to check whether the glass wafer could be peeled off. After laser irradiation, the glass wafer was lifted up with tweezers, and the case where it could be easily peeled off was marked as "○", and the case where it could not be peeled off was marked as "×".

[0334] Next, in order to confirm whether the adhesive layer formed using the adhesive composition for photoirradiation peeling of the present invention exhibits strong adhesion to a plurality of chip substrates, a chip substrate fixing test described in Example 3 below was performed.

[0335] [Example 3] Chip substrate fixing test

[0336] A 100 mm glass wafer (EAGLE-XG, manufactured by Corning, 500 μm thick) was prepared, and compositions (1) to (10) were applied using a spin coater, and heated on a 90° C. hot plate for 90 seconds to form composition layers (1) to (10) of 2.5 μm. Three 2 cm square silicon substrates (thickness: 400 μm) were placed on the composition layer, and the glass wafer was placed on a workbench in a bonding device set at 110° C., and heated and pressed for 1 minute with a load of 160 kg.

[0337] The pressed glass wafer was taken out and cooled so that the glass wafer was vertical to the ground. The case where the 2 cm square silicon substrate was fixed without being detached was recorded as "0", and the case where it was not fixed and fell was recorded as "×".

[0338] The test results of Example 2 and Example 3 are shown in Table 1 below.

[0339] [Table 1]

[0340]

[0341] The above examples show that the composition layers (2) to (10) formed using the adhesive composition for photo-irradiation removability specified in the present invention show excellent releasability after laser irradiation and excellent fixation of a plurality of chip substrates.

[0342] Therefore, the adhesive composition for light irradiation stripping specified in the present invention can form the following adhesive layer, which can firmly bond the supporting substrate to the semiconductor substrate or the electronic device layer when the semiconductor substrate or the electronic device layer is processed, and after the substrate is processed, the supporting substrate can be easily separated from the semiconductor substrate or the electronic device layer by light irradiation.

[0343] Description of Reference Numerals

[0344] 1: semiconductor substrate; 2: adhesive layer; 3: support substrate; 4: semiconductor chip substrate; 5: sealing resin; 6: electronic device layer; 7: wiring layer.

Claims

1. An adhesive composition for photoirradiation peeling, which is used to form the following adhesive layer of the following laminated body, the laminated body comprising: a semiconductor substrate or an electronic device layer, a supporting substrate, and an adhesive layer provided between the semiconductor substrate or the electronic device layer and the supporting substrate, the electronic device layer comprising a plurality of semiconductor chip substrates and a sealing resin arranged between the semiconductor chip substrates, and the laminated body is used to: after the adhesive layer absorbs light irradiated from the supporting substrate side, the semiconductor substrate or the electronic device layer and the supporting substrate are peeled off, The adhesive composition contains a light-absorbing compound, an organic resin, and an organic solvent, wherein the light-absorbing compound helps to facilitate the separation of the semiconductor substrate or the electronic device layer from the support substrate by absorbing the light. The light absorbing compound is a compound having the following structure, or a polyphenol-based compound, wherein the structure is a structure selected from the group consisting of a benzophenone structure, a diphenylamine structure, a diphenyl sulfoxide structure, a diphenyl sulfone structure, an azobenzene structure, a dibenzofuran structure, a fluorenone structure, a carbazole structure, an anthraquinone structure, a 9,9-diphenyl-9H-fluorene structure, a naphthalene structure, anthracene structure, a phenanthrene structure, an acridine structure, a pyrene structure, a phenylbenzotriazole structure, and a structure derived from cinnamic acid.

2. The adhesive composition according to claim 1, wherein The light absorbing compound is a compound having a structure represented by any of the following formulae (1) to (8), In formulas (1) to (8), R1 to R 13 each independently represents a halogen atom or a monovalent group; X represents a single bond, -O-, -CO-, or -NR 31 -, -SO-, -SO2- or -N=N-, the -NR 31 - Middle, R 31 represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group; Y1 represents a single bond or -CO-; when Y1 is a single bond, Y2 represents -O-, -CO- or -NR 32 -, said -NR 32 - Middle, R 32 represents a hydrogen atom, an optionally substituted alkyl group or an optionally substituted aryl group; when Y1 is -CO-, Y2 represents -CO-, n1 is an integer from 0 to 4; n2 is an integer from 0 to 5; n3 is an integer from 0 to 3; n4 is an integer from 0 to 4; n5 is an integer from 0 to 4; n6 is an integer from 0 to 5; n7 is an integer from 0 to 4; n8 is an integer from 0 to 4; n9 is an integer from 0 to 7; n10 is an integer from 0 to 9; n11 is an integer from 0 to 9; n12 is an integer from 0 to 4; n13 is an integer from 0 to 4, * indicates a bonding key, In R1~R 13 When there are multiple R1 to R 13 Optionally the same or different.

3. The adhesive composition according to claim 1, wherein The polyphenolic compound in the light-absorbing compound is a compound selected from the group consisting of condensed tannins obtained by polymerizing compounds having a flavanol skeleton, hydrolyzable tannins obtained by esterifying aromatic compounds of gallic acid or ellagic acid with sugar, and flavonoids derived from compounds having a flavanone skeleton structure.

4. The adhesive composition according to claim 3, wherein The hydrolyzable tannin is tannic acid represented by the following formula (9):

5. A laminate, wherein: The invention comprises: a semiconductor substrate or an electronic device layer, a light-transmitting support substrate, and an adhesive layer provided between the semiconductor substrate or the electronic device layer and the support substrate. The electronic device layer includes a plurality of semiconductor chip substrates and a sealing resin disposed between the semiconductor chip substrates. The laminate is used for peeling the semiconductor substrate or the electronic device layer from the support substrate after the adhesive layer absorbs light irradiated from the support substrate side, wherein: The adhesive layer is formed from the adhesive composition according to any one of claims 1 to 4.

6. A method for manufacturing a processed semiconductor substrate or electronic device layer, wherein: include: Step 5A, processing the semiconductor substrate of the stacked body according to claim 5; or step 5B, processing the electronic device layer of the laminate according to claim 5; as well as The step 6A is to separate the semiconductor substrate processed in the step 5A from the support substrate; or the step 6B is to separate the electronic device layer processed in the step 5B from the support substrate.

7. The method for manufacturing a processed semiconductor substrate or an electronic device layer according to claim 6, wherein: The step 6A or the step 6B includes the step of irradiating the stacked body with laser light from the support substrate side.

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