Bending-fracture-preventing IGBT transistor pin shearing and shaping equipment and process

Abstract

The invention relates to the technical field of IGBT (Insulated Gate Bipolar Transistor) production, in particular to an anti-bending and anti-fracture IGBT pin shearing and shaping device and process, and the device comprises a base which is provided with a bearing part and a jacking mechanism; the cutting structure is arranged at the bottom of the bearing part, and the cutting structure can cut the IGBT transistor pins which are arranged on the bearing part and protrude out of the lower surface of the bearing part; the suction assembly is arranged on the base, the suction assembly is matched with the jacking mechanism and can suck the IGBT transistor, and the trigger structure arranged on the base is matched with the suction assembly and can separate the IGBT transistor from the suction assembly; the driving assembly is connected with the suction assembly, the driving assembly comprises a power structure, a vertical plate and a cross-shaped sliding table structure, the power structure is matched with the vertical plate, when the suction assembly moves to the stroke end, the suction assembly can execute one-time lifting action, the speed is increased, and the pin shearing precision is improved.

Description

Technical Field

[0001] The invention relates to the technical field of IGBT transistor production, and in particular to a device and a process for shearing and shaping IGBT transistor pins to prevent bending and fracture. Background Art

[0002] IGBT transistor is a composite power semiconductor device that combines the advantages of MOSFET and BJT. It is mainly used for the conversion and control of electric energy, and is widely used in power electronics, new energy vehicles, rail transportation, renewable energy and many other fields.

[0003] After IGBT transistors are manufactured, their pins need to be cut to ensure high performance, reliability and scalability of the circuit.

[0004] As for the existing IGBT transistor pin cutting devices, most of them grasp the IGBT transistor by negative pressure adsorption and transfer the IGBT transistor with the help of a robot. The connection method of negative pressure adsorption is not a rigid connection, and the movement speed of the robot is relatively fast, so that when the robot drives the IGBT transistor to move and stop in the vertical direction of space, vibration will be generated, so that the IGBT transistor is at risk of relative displacement or even separation from the negative pressure adsorption device. In addition, in the existing pin cutting devices, the positioning of the transistor is usually only done by clamping it with a clamp. When the pin is cut with a cutter, it will drive the pin to move, resulting in unsatisfactory cutting quality. Summary of the invention

[0005] The object of the present invention is to provide an IGBT transistor pin shearing and shaping device and process to prevent bending and breaking, so as to solve the problems raised in the above-mentioned background technology.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] An IGBT transistor pin shearing and shaping device for preventing bending and breaking, comprising:

[0008] A base, wherein a supporting member and a lifting mechanism are arranged on the base;

[0009] A cutting structure, arranged at the bottom of the supporting member, the cutting structure can cut the IGBT transistor pins placed on the supporting member and protruding from the lower surface of the supporting member;

[0010] A suction component is arranged on the base, the suction component cooperates with the lifting mechanism to adsorb the IGBT transistor, and the trigger structure arranged on the base cooperates with the suction component to separate the IGBT transistor from the suction component;

[0011] A driving assembly is connected to the suction assembly, and the driving assembly includes a power structure, a vertical plate and a cross slide structure. The power structure cooperates with the vertical plate to enable the suction assembly to perform a lifting action when the suction assembly moves to the end of the stroke.

[0012] As a further solution of the present invention: a retardation groove is provided on the supporting member, and a conducting hole is provided in the retardation groove for the IGBT transistor pin to pass through;

[0013] The cutting structure comprises a cutting knife slidably fitted with the bottom of the supporting member, the cutting knife is provided with a guide member, and the guide member is slidably connected with a guide rod provided at the bottom of the supporting member;

[0014] An electric telescopic rod is also fixedly mounted on the supporting member, and an action end of the electric telescopic rod is fixedly connected to the cutting knife.

[0015] As a further solution of the present invention: the power structure includes a motor mounted on the vertical plate, the output shaft of the motor is connected to a screw rod rotatably mounted on the vertical plate, the screw rod is provided with a threaded sleeve plate, the threaded sleeve plate is connected to a guide member, and the guide member is slidably connected to a guide rod provided on the vertical plate;

[0016] The power structure also includes a follower plate fixedly connected to the threaded sleeve plate, and the follower plate is connected to a coaxial wheel set connected to the cross slide structure.

[0017] As a further solution of the present invention: two groups of inclined guide surfaces are symmetrically arranged on the follower plate, and the two groups of inclined guide surfaces are in a "V"-shaped structure.

[0018] As a further solution of the present invention: the vertical plate is provided with a guide groove, the guide groove comprises a horizontal groove provided on the vertical plate and two groups of first vertical grooves connected to the ends of the horizontal groove;

[0019] The coaxial wheel set comprises a groove wheel rollingly arranged in the guide groove and an abutment shaft coaxially arranged with the groove wheel, and the abutment shaft is adapted to the two groups of inclined guide surfaces.

[0020] As a further solution of the present invention: the cross slide structure includes a bracket arranged on the vertical plate and side frames symmetrically arranged on both sides of the bracket, the side frames are provided with second vertical grooves, and the connecting wheels arranged on the sides of the bracket can roll in the second vertical grooves;

[0021] The cross slide structure also includes a transverse axis connected to the bracket, a sliding connector is slidably mounted on the transverse axis, the sliding connector is rotationally connected to the groove wheel, and the sliding connector is connected to the suction assembly through a connecting frame.

[0022] As a further solution of the present invention: the suction assembly includes a negative pressure cylinder body detachably connected to the connecting frame, a suction cup is provided at one end of the negative pressure cylinder body, and a sealing plug is sealingly and slidably installed in the negative pressure cylinder body, the sealing plug is connected to a connecting shaft that passes through the negative pressure cylinder body, a cylindrical spring is sleeved on the connecting shaft, one end of the cylindrical spring is connected to the inner wall of the negative pressure cylinder body, and the other end is connected to the sealing plug;

[0023] An abutment wheel adapted to the trigger structure is rotatably mounted on one end of the connecting shaft away from the sealing plug.

[0024] As a further solution of the present invention: the trigger structure includes a connecting frame fixedly connected to the vertical plate, a trigger member is rotatably mounted on the connecting frame, and the trigger member is adapted to a stop rod arranged on the connecting frame.

[0025] As a further solution of the present invention: an air pump is fixedly mounted on the base, and a control switch is provided on the air pump, and the control switch is adapted to the trigger shaft connected to the threaded sleeve plate;

[0026] An air supply head is also arranged on the base, and the air supply head is connected with the air pump.

[0027] Compared with the prior art, the present invention has the following beneficial effects:

[0028] By setting the driving component, during the movement of the follower plate, the IGBT transistor can be driven by the suction component to perform the horizontal movement of the elevator, thereby improving the automation of the device and ensuring the stability and accuracy of the movement position of the IGBT transistor. At the same time, under the cooperation of the inclined guide surface and the abutment shaft, the groove wheel can be lifted and lowered smoothly at a certain speed along the first vertical groove, ensuring that no vibration is generated when the suction component drives the IGBT transistor, thereby improving the connection stability between the IGBT transistor and the suction component.

[0029] By setting the suction component and the trigger structure, when the IGBT crystal interacts with the suction cup, negative pressure can be generated in the suction cup and the negative pressure cylinder under the driving of the lifting mechanism, so that the IGBT crystal can be grabbed by the negative pressure, ensuring the stability of the suction component when driving the IGBT crystal to move, and after the pin shearing of the IGBT crystal is completed, the abutment wheel can cooperate with the trigger member to separate the IGBT crystal from the suction cup autonomously, thereby improving the degree of automation when the suction device is unloading;

[0030] By providing a retardation groove on the support member and a through hole in the retardation groove for the IGBT transistor pin to penetrate, the through hole has a binding effect on the IGBT transistor pin, thereby preventing the IGBT transistor pin from bending or breaking due to force during the shearing process, thereby improving the yield rate;

[0031] The air pump, air supply head, control switch and trigger shaft are provided to remove metal dust adhered to the hysteresis groove and the through hole. On the one hand, the IGBT crystal pin can be inserted into the through hole more smoothly. On the other hand, the metal dust is prevented from being located between the hysteresis groove and the IGBT crystal, resulting in the IGBT crystal being unable to fit with the hysteresis groove, causing the IGBT crystal pin to be cut to an insufficient length, thereby further improving the IGBT crystal yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A structural schematic diagram of an embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and fracture.

[0033] Figure 2 A schematic structural diagram of another angle of an embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and fracture.

[0034] Figure 3 A schematic diagram of the power structure of an embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and fracture.

[0035] Figure 4 A schematic diagram of the structure of a vertical plate in an embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and breaking.

[0036] Figure 5 A schematic diagram of the structure of the other side of the upper plate in one embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and breaking.

[0037] Figure 6 An exploded view of the structure of a cross slide in one embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and fracture.

[0038] Figure 7 A schematic structural diagram of the matching relationship between a coaxial wheel set, a follower plate and a vertical plate in one embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and fracture.

[0039] Figure 8 A schematic diagram of the structure of a suction component in an embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and breaking.

[0040] Fig. 9A schematic diagram of a trigger structure in an embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and breaking.

[0041] Fig.10 A schematic diagram of the structure of the cutting structure in one embodiment of an IGBT transistor pin shearing and shaping device to prevent bending and breaking.

[0042] In the figure: 1, base; 101, collecting tank; 102, lifting mechanism; 2, supporting member; 201, retardation tank; 3, electric telescopic rod; 4, cutting knife; 401, guide member; 5, guide rod; 6, motor; 7, screw rod; 8, threaded sleeve; 801, guide member; 9, follower plate; 901, inclined guide surface; 10, vertical plate; 11, first vertical groove; 12, horizontal groove; 13, abutment shaft; 14, groove wheel; 15, Sliding connector; 16, connecting frame; 17, horizontal axis; 18, bracket; 19, connecting wheel; 20, side frame; 2001, second vertical slot; 21, negative pressure cylinder; 22, suction cup; 23, sealing plug; 24, connecting shaft; 25, cylindrical spring; 26, abutment wheel; 27, connecting frame; 28, trigger member; 29, stop rod; 30, trigger shaft; 31, air pump; 32, control switch; 33, air supply head; 34, guide rod. DETAILED DESCRIPTION

[0043] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0044] In addition, when an element in the present invention is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only embodiment.

[0045] See also Figures 1 to 10 In an embodiment of the present invention, a bending and breaking-proof IGBT transistor pin shearing and shaping device includes: a base 1, a cutting structure, a suction component and a driving component.

[0046] The base 1 is provided with a supporting member 2 and a lifting mechanism 102, wherein after the IGBT transistor is produced, the external transmission component can transport it to the upper part of the lifting mechanism 102, and then the lifting mechanism 102 drives the IGBT transistor to move upward until it is fitted with the suction component, and the suction component can absorb the IGBT transistor, thereby reducing the amount of manual participation in the production process, improving the degree of automation of the device, and avoiding manual operation causing the position of the IGBT transistor to deviate, and thus preventing it from being accurately placed at the corresponding position of the supporting member 2.

[0047] The cutting structure is arranged at the bottom of the supporting member 2, and the cutting structure can cut the IGBT transistor pins placed on the supporting member 2 and protruding from the lower surface of the supporting member 2;

[0048] The support member 2 is provided with a retardation groove 201, and a through hole for the IGBT transistor pin to pass through is provided in the retardation groove 201;

[0049] The cutting structure comprises a cutting knife 4 which is slidably fitted with the bottom of the supporting member 2, and a guide member 401 is arranged on the cutting knife 4, and the guide member 401 is slidably connected with a guide rod 5 arranged at the bottom of the supporting member 2;

[0050] An electric telescopic rod 3 is also fixedly mounted on the supporting member 2 , and an action end of the electric telescopic rod 3 is fixedly connected to the cutting knife 4 .

[0051] In the initial state, the cutting knife 4 and the through hole are completely misaligned. At this time, when the IGBT transistor is placed in the retardation groove 201, the pin of the IGBT transistor can pass through the through hole so that the pin toward the predetermined length protrudes from the lower surface of the supporting member 2. At this time, when the electric telescopic rod 3 drives the cutting knife 4 to move along the bottom of the supporting member 2, the cutting part of the cutting knife 4 can cut the pin toward the predetermined length, so that the pin length of the IGBT transistor is consistent after cutting, which is convenient for subsequent use. In addition, during the cutting process, the through hole has the effect of restraining the pin of the IGBT transistor, thereby preventing the IGBT transistor pin from bending or breaking due to the force applied during the cutting process, thereby improving the yield rate.

[0052] See also Figure 2 to Figure 6 The driving assembly is connected to the suction assembly, and the driving assembly includes a power structure, a vertical plate 10 and a cross slide structure. The power structure cooperates with the vertical plate 10 to enable the suction assembly to perform a lifting action when the suction assembly moves to the end of the stroke;

[0053] Specifically, the power structure includes a motor 6 installed on the vertical plate 10, the output shaft of the motor 6 is connected to a screw rod 7 rotatably installed on the vertical plate 10, the screw rod 7 is provided with a threaded sleeve 8, the threaded sleeve 8 is connected to a guide member 801, and the guide member 801 is slidably connected to a guide rod 34 provided on the vertical plate 10;

[0054] The power structure further includes a follower plate 9 fixedly connected to the threaded sleeve plate 8, the follower plate 9 is connected to a coaxial wheel set connected to the cross slide structure, and two groups of inclined guide surfaces 901 are symmetrically arranged on the follower plate 9, and the two groups of inclined guide surfaces 901 are in a "V"-shaped structure;

[0055] The vertical plate 10 is provided with a guide groove, and the guide groove includes a horizontal groove 12 provided on the vertical plate 10 and two groups of first vertical grooves 11 connected to the ends of the horizontal groove 12;

[0056] The coaxial wheel set includes a groove wheel 14 rollingly arranged in the guide groove and an abutment shaft 13 coaxially arranged with the groove wheel 14 , and the abutment shaft 13 is adapted to the two groups of inclined guide surfaces 901 .

[0057] In the initial state, the suction assembly is located directly above the lifting mechanism 102, at which time the groove wheel 14 is at the lower end of one of the first vertical grooves 11, and the abutment shaft 13 is at the bottom of the "V"-shaped structure formed by the two sets of inclined guide surfaces 901, and the groove wheel 14 is in a laterally locked state, so that the position of the suction assembly in this state is more accurate, and the suction assembly can accurately and stably adsorb the IGBT transistor lifted by the lifting mechanism 102.

[0058] When the suction component completes the absorption of the IGBT transistor, the motor 6 starts working and drives the screw rod 7 connected thereto to rotate. At this time, the threaded sleeve plate 8 threadedly connected to the screw rod 7 can move along the length direction of the screw rod 7 and drive the follower plate 9 to move. At this time, the inclined guide surface 901 on the rear side away from the movement direction of the follower plate 9 will fit with the abutment shaft 13. At the same time, the groove wheel 14 has and can only move upward along the length direction of the first vertical groove 11, so that when the follower plate 9 moves, the abutment shaft 13 and the groove wheel 14 will move upward synchronously. At this time, the suction component can drive the IGBT transistor to move upward, and when the groove wheel 14 moves to the upper end of the first vertical groove 11, the follower plate 9 will continue to move. At this time, the inclined guide surface 901 can abut against the abutment shaft 13, so that the abutment shaft 13 and the groove wheel 14 move along the length direction of the horizontal groove 12. After the follower plate 9 moves to the end of the stroke, the groove wheel 14 will be at the connection between the horizontal groove 12 and another group of first vertical grooves 11 (see Figure 7), then the motor 6 will rotate in the reverse direction, causing the follower plate 9 to move in the reverse direction. At this time, the groove wheel 14 and the abutment shaft 13 will move downward along the first vertical groove 11, so that the suction component can drive the IGBT transistor to move toward the retardation groove 201 until the IGBT transistor fits with the retardation groove 201, so that the IGBT transistor reaches the shearing station, realizing the mechanized automatic transmission of the IGBT transistor, and ensuring the stability and accuracy of the movement position of the IGBT transistor.

[0059] Furthermore, with the cooperation of the inclined guide surface 901 and the abutment shaft 13, the groove wheel 14 can be lifted and lowered smoothly at a certain speed along the first vertical groove 11, and no vibration is generated when the suction component drives the IGBT transistor to move, thereby ensuring the stability of the connection between the IGBT transistor and the suction component.

[0060] Through the above arrangement, during the movement of the follower plate 9, the IGBT transistor can be driven by the suction component to perform the horizontal movement of the elevator, thereby improving the degree of automation of the device and ensuring the stability and accuracy of the movement position of the IGBT transistor. At the same time, with the cooperation of the inclined guide surface 901 and the abutment shaft 13, the groove wheel 14 can be lifted and lowered smoothly at a certain speed along the first vertical groove 11, ensuring that no vibration is generated when the suction component drives the IGBT transistor, thereby improving the connection stability between the IGBT transistor and the suction component.

[0061] See also Figure 5-6 The cross slide structure includes a bracket 18 arranged on the vertical plate 10 and side frames 20 symmetrically arranged on both sides of the bracket 18, and the side frames 20 are provided with second vertical grooves 2001, and the connecting wheels 19 arranged on the sides of the bracket 18 can roll in the second vertical grooves 2001;

[0062] The cross slide structure also includes a transverse axis 17 connected to the bracket 18 , and a sliding connector 15 is slidably mounted on the transverse axis 17 . The sliding connector 15 is rotationally connected to the groove wheel 14 , and the sliding connector 15 is connected to the suction assembly through a connecting frame 16 .

[0063] Exemplarily, when the groove wheel 14 moves upward along the first vertical groove 11, it can drive the sliding connector 15 to move upward. At this time, the sliding connector 15 drives the bracket 18 to move upward through the horizontal axis 17. At this time, the bracket 18 can move vertically upward under the cooperation of the connecting wheel 19 and the second vertical groove 2001, that is, the cooperation between the connecting wheel 19 and the second vertical groove 2001 has the effect of vertically guiding the sliding connector 15, and when the groove wheel 14 moves along the horizontal groove 12, the groove wheel 14 can drive the sliding connector 15 to move along the length direction of the horizontal axis 17, that is, the horizontal axis 17 has the effect of laterally guiding the sliding connector 15. The structures of the two can enable the sliding connector 15 to maintain directional lifting and lateral movement, thereby improving the stability of the sliding connector 15 when driving the adsorption component to move, so that when the IGBT transistor moves, its pin direction can always be kept downward, further improving the stability of the IGBT crystal when it moves toward the hysteresis groove 201, and ensuring that the IGBT crystal pin can be inserted into the conduction hole.

[0064] See also Figure 8-Figure 9 The suction component is arranged on the base 1, and the suction component cooperates with the lifting mechanism 102 to adsorb the IGBT transistor. The trigger structure arranged on the base 1 cooperates with the suction component to separate the IGBT transistor from the suction component;

[0065] The suction assembly includes a negative pressure cylinder 21 detachably connected to the connecting frame 16, a suction cup 22 is provided at one end of the negative pressure cylinder 21, and a sealing plug 23 is sealingly and slidably installed in the negative pressure cylinder 21, a connecting shaft 24 penetrating the negative pressure cylinder 21 is connected to the sealing plug 23, a cylindrical spring 25 is sleeved on the connecting shaft 24, one end of the cylindrical spring 25 is connected to the inner wall of the negative pressure cylinder 21, and the other end is connected to the sealing plug 23. In detail, in the initial state, the cylindrical spring 25 is in a stretched state, and in this state, the convex ring provided on the connecting shaft 24 is in abutment with the upper top wall inside the negative pressure cylinder 21;

[0066] An abutment wheel 26 adapted to the trigger structure is rotatably mounted on one end of the connecting shaft 24 away from the sealing plug 23;

[0067] The trigger structure includes a connecting frame 27 fixedly connected to the vertical plate 10, and a trigger member 28 is rotatably mounted on the connecting frame 27, and the trigger member 28 is adapted to a stop rod 29 provided on the connecting frame 27;

[0068] Furthermore, a collecting tank 101 is provided on the base 1 .

[0069] When the lifting mechanism 102 drives the IGBT crystal to move upward, the IGBT crystal can directly act on the suction cup 22, wherein the suction cup 22 is made of flexible rubber. This allows the suction cup 22 to deform when the IGBT crystal acts on the suction cup 22, and some of the air in the suction cup 22 and the negative pressure cylinder 21 is discharged from the joint between the suction cup 22 and the IGBT crystal. When the lifting mechanism 102 is reset, the suction cup 22 is deformed by resetting, and negative pressure is generated in the suction cup 22 and the negative pressure cylinder 21. Under the action of the negative pressure, the IGBT crystal can be adsorbed by the suction cup 22 to complete the grasping action.

[0070] When the connecting frame 16 drives the suction assembly to move horizontally toward the supporting member 2, when the abutting wheel 26 is in contact with the triggering member 28, as the abutting wheel 26 continues to move, the abutting wheel 26 can drive the triggering member 28 to deflect. At this time, the connecting shaft 24 can remain stationary relative to the negative pressure cylinder 21. After the pin of the IGBT crystal is sheared, the connecting frame 16 will drive the IGBT crystal to move in the opposite direction through the suction assembly. When the abutting wheel 26 abuts against the triggering member 28 again, the triggering member 28 will deflect again. However, when the triggering member 28 deflects this time, it will abut against the stop rod 29, and the triggering member 28 will stop moving after deflecting to the inclined position, so that as the abutting wheel 26 continues to move, the abutting wheel 26 can move along the length direction of the triggering member 28, and the connecting shaft 24 can move toward the inside of the negative pressure cylinder 21. At this time, the column spring 25 is further stretched, and at the same time, the sealing plug 23 can switch the negative pressure inside the negative pressure cylinder 21 and the suction cup 22 from negative pressure to positive pressure, so that I The GBT crystal can be separated from the suction cup 22 under the action of gravity and fall into the collection tank 101, thereby realizing the automatic separation of the IGBT crystal and the suction component.

[0071] Through the above arrangement, when the IGBT crystal interacts with the suction cup 22, negative pressure can be generated in the suction cup 22 and the negative pressure cylinder 21 under the drive of the lifting mechanism 102, so that the IGBT crystal can be grasped by the negative pressure, ensuring the stability of the suction component when driving the IGBT crystal to move. After the pin shearing of the IGBT crystal is completed, the abutment wheel 26 can cooperate with the trigger member 28 to separate the IGBT crystal from the suction cup 22 autonomously, thereby improving the degree of automation of the suction device when unloading.

[0072] See also Figure 1-2 The base 1 is also fixedly mounted with an air pump 31, and the air pump 31 is provided with a control switch 32, and the control switch 32 is adapted to the trigger shaft 30 connected to the threaded sleeve plate 8;

[0073] The base 1 is also provided with an air supply head 33 , and the air supply head 33 is connected to the air pump 31 .

[0074] In the present application, when the follower plate 9 moves to the end of the stroke, the follower plate 9 needs to move in the opposite direction for a certain distance to make the groove wheel 14 move to the lower end of the first vertical groove 11. In the present embodiment, when the follower plate 9 moves to the end of the stroke, the trigger shaft 30 also moves to the end of the stroke synchronously. At this time, the trigger shaft 30 can abut against the control switch 32, so that the control switch 32 is in an open state. At this time, the air pump 31 works and pumps compressed air toward the air supply head 33, wherein the air supply head 33 is provided with an air outlet inclined downward, so that when the compressed air escapes through the air outlet, it can act on the retardation groove 201 and the conductive hole to remove the metal dust adhered to the retardation groove 201 and the conductive hole. On the one hand, it can make the IGBT crystal pin insert into the conductive hole more smoothly, and on the other hand, it can avoid the metal dust being located between the retardation groove 201 and the IGBT crystal, resulting in the IGBT crystal being unable to fit with the retardation groove 201, causing the IGBT crystal pin to be cut to an insufficient length, thereby further improving the IGBT crystal yield.

[0075] As an embodiment of the present invention, a process for shearing IGBT transistor pins using the anti-bending and fracture shearing and shaping device is also proposed, comprising the following steps:

[0076] Step 1: The external transmission component transports the IGBT transistor to the lifting mechanism 102, the lifting mechanism 102 lifts the IGBT transistor, and the suction component absorbs it;

[0077] Step 2: The power structure moves, cooperates with the vertical plate 10 and the cross slide structure, drives the suction component to perform ascending, lateral movement, and descending actions in sequence, so that the IGBT transistor is placed in the hysteresis groove 201, and the IGBT transistor pins penetrate to the lower surface of the support member 2;

[0078] Step 3: Cutting structure action, cutting the IGBT transistor pins;

[0079] Step 4: The power structure drives the absorption structure to move in the reverse direction, and when the absorption structure cooperates with the trigger structure, the IGBT transistor is separated from the absorption structure.

[0080] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

[0081] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A bending and breaking-proof IGBT transistor pin shearing and shaping device, characterized in that: include: A base (1), wherein a supporting member (2) and a lifting mechanism (102) are provided on the base (1); A cutting structure, arranged at the bottom of the supporting member (2), the cutting structure being capable of cutting the IGBT transistor pins which are placed on the supporting member (2) and protrude from the lower surface of the supporting member (2); The support member (2) is provided with a retardation groove (201), and a conduction hole for the IGBT transistor pin to pass through is provided in the retardation groove (201); A suction component is arranged on the base (1), the suction component cooperates with the lifting mechanism (102) to adsorb the IGBT transistor, and a trigger structure arranged on the base (1) cooperates with the suction component to separate the IGBT transistor from the suction component; A driving assembly is connected to the suction assembly, the driving assembly comprising a power structure, a vertical plate (10) and a cross slide structure, the power structure cooperates with the vertical plate (10) to enable the suction assembly to perform a lifting action when the suction assembly moves to the end of the stroke.

2. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 1, characterized in that: The cutting structure comprises a cutting knife (4) slidably fitted with the bottom of the supporting member (2), the cutting knife (4) being provided with a guide member (401), and the guide member (401) being slidably connected to a guide rod (5) provided at the bottom of the supporting member (2); An electric telescopic rod (3) is also fixedly mounted on the supporting member (2), and an actuating end of the electric telescopic rod (3) is fixedly connected to the cutting knife (4).

3. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 1, characterized in that: The power structure comprises a motor (6) mounted on the vertical plate (10); the output shaft of the motor (6) is connected to a screw rod (7) rotatably mounted on the vertical plate (10); the screw rod (7) is provided with a threaded sleeve (8); the threaded sleeve (8) is connected to a guide member (801); the guide member (801) is slidably connected to a guide rod (34) provided on the vertical plate (10); The power structure also includes a follower plate (9) fixedly connected to the threaded sleeve plate (8), and the follower plate (9) is connected to a coaxial wheel set connected to the cross slide structure.

4. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 3, characterized in that: Two groups of inclined guide surfaces (901) are symmetrically arranged on the follower plate (9), and the two groups of inclined guide surfaces (901) are in a "V"-shaped structure.

5. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 4, characterized in that: The vertical plate (10) is provided with a guide groove, and the guide groove comprises a horizontal groove (12) provided on the vertical plate (10) and two groups of first vertical grooves (11) connected to the ends of the horizontal groove (12); The coaxial wheel set comprises a groove wheel (14) rollingly arranged in the guide groove and an abutment shaft (13) coaxially arranged with the groove wheel (14), and the abutment shaft (13) is adapted to the two groups of inclined guide surfaces (901).

6. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 5, characterized in that: The cross slide structure comprises a bracket (18) arranged on the vertical plate (10) and side frames (20) symmetrically arranged on both sides of the bracket (18); a second vertical groove (2001) is arranged on the side frame (20); and a connecting wheel (19) arranged on the side of the bracket (18) is capable of rolling in the second vertical groove (2001); The cross slide structure also includes a transverse axis (17) connected to the bracket (18), a sliding connection member (15) is slidably mounted on the transverse axis (17), the sliding connection member (15) is rotationally connected to the groove wheel (14), and the sliding connection member (15) is connected to the suction assembly via a connecting frame (16).

7. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 6, characterized in that: The suction assembly comprises a negative pressure cylinder (21) detachably connected to the connecting frame (16), a suction cup (22) is arranged at one end of the negative pressure cylinder (21), and a sealing plug (23) is sealingly and slidably installed in the negative pressure cylinder (21), the sealing plug (23) is connected to a connecting shaft (24) penetrating the negative pressure cylinder (21), a cylindrical spring (25) is sleeved on the connecting shaft (24), one end of the cylindrical spring (25) is connected to the inner wall of the negative pressure cylinder (21), and the other end is connected to the sealing plug (23); An abutment wheel (26) adapted to the trigger structure is rotatably mounted on one end of the connecting shaft (24) away from the sealing plug (23).

8. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 7, characterized in that: The trigger structure comprises a connecting frame (27) fixedly connected to the vertical plate (10), a trigger member (28) being rotatably mounted on the connecting frame (27), and the trigger member (28) being adapted to a stop rod (29) arranged on the connecting frame (27).

9. The IGBT transistor pin shearing and shaping device for preventing bending and fracture according to claim 3, characterized in that: The base (1) is also fixedly mounted with an air pump (31), the air pump (31) is provided with a control switch (32), and the control switch (32) is adapted to a trigger shaft (30) connected to the threaded sleeve plate (8); The base (1) is also provided with an air supply head (33), and the air supply head (33) is connected to the air pump (31).

10. A process for shearing IGBT transistor pins using the anti-bending and fracture shearing and shaping device according to any one of claims 1 to 9, characterized in that: The following steps are involved: Step 1: The external transmission component transports the IGBT transistor to the lifting mechanism (102), the lifting mechanism (102) lifts the IGBT transistor, and the suction component absorbs it; Step 2: The power structure moves, cooperates with the vertical plate (10) and the cross slide structure, drives the suction component to perform ascending, lateral movement, and descending actions in sequence, so that the IGBT transistor is placed in the retardation groove (201), and at the same time, the IGBT transistor pins penetrate to the lower surface of the supporting member (2); Step 3: Cutting structure action, cutting the IGBT transistor pins; Step 4: The power structure drives the absorption structure to move in the reverse direction, and when the absorption structure cooperates with the trigger structure, the IGBT transistor is separated from the absorption structure.

Images