Silicon wafer mold opening method and laser mold opening machine

By performing laser doping process at the processing position of the silicon wafer and using a laser mold opening machine with dual laser light sources, the problems of damage during the mold opening of the silicon wafer and the difficulty in removing the coating material are solved, achieving efficient and accurate mold opening Effective and improve productivity.

CN119387807APending Publication Date: 2025-02-07GUANGDONG LYRIC ROBOT INTELLIGENT AUTOMATION CO LTD
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Patent Information

Application Number
CN202411744242.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-30
Publication Date
2025-02-07

AI Technical Summary

Technical Problem

In the prior art, silicon wafers are easily damaged during mold opening, and due to the existence of coating materials, it is difficult to effectively remove the laser mold opening machine with a single optical path, resulting in unstable mold opening effect and low processing accuracy.

Method used

By pre-doping at the processing position of the silicon wafer, laser doping makes the surface material more easily removed by laser, improving the mold opening stability and processing accuracy. At the same time, a laser mold opening machine with dual laser light sources is used for doping and mold opening processes respectively to ensure the consistency of beam quality and focal length.

Benefits of technology

It realizes efficient removal of silicon wafer surface materials, improves mold opening stability and processing accuracy, reduces repeated positioning, and improves production efficiency.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention discloses a silicon wafer mold opening method and a laser machine, and the method comprises the following steps: feeding: sucking a target silicon wafer to a target position of a jig, and enabling the jig to adsorb and fix the target silicon wafer; acquiring a processing reference, acquiring image information of a target silicon wafer on the jig through an image acquisition device, analyzing the image information of the target silicon wafer through a system to acquire one or two groups of diagonals of the target silicon wafer, and taking a midpoint of the diagonals or an intersection point of the diagonals as a positioning reference of the target silicon wafer; determining the processing position of the target silicon wafer according to the currently obtained positioning reference; determining a processing track, and according to the image of the target silicon wafer and the determined processing position, generating and determining the processing track of a process corresponding to the target silicon wafer by the system; and mold opening treatment: according to the determined processing position, the second light source outputs a second light beam to the processing position of the target silicon wafer, and the second light beam performs mold opening on the surface of the target silicon wafer according to a preset processing track. The laser machine is used for realizing the silicon wafer mold opening method.
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Description

Technical Field

[0001] The invention relates to the technical field of silicon wafer laser processing, and in particular to a silicon wafer mold opening method and a laser mold opening machine. Background Art

[0002] Since silicon wafers are easily damaged, in the mold opening machine, if a limit structure is set to limit the silicon wafer before mold opening, hard contact is easy to cause damage. If there is no limit, the adsorption base is easy to cause errors in the silicon wafer bearing position, which is easy to cause inaccurate mold opening position. At present, visual positioning is generally used to obtain the position of silicon wafers before mold opening. The use of visual positioning system can provide high-precision positioning information for product processing, so that the processing accuracy of the product is guaranteed.

[0003] In addition, in the prior art, for the mold opening processing of silicon wafers, the existing mold opening method is to directly use a beam of laser for mold opening, and the mold opening effect fails to meet the use requirements of the product. The reason is that some coating materials on the silicon wafer, such as BSG materials, require very high-power lasers to remove. The mold opening machine with a single set of optical paths can only remove them by superimposing the laser power. High-power lasers have fast attenuation and inconsistent beam quality, resulting in unstable spot shaping effects. If multiple sets of lasers with different energies are used for mold opening processing on the surface of the silicon wafer, due to the difference in the focal length of lasers with different energies, the position of the silicon wafer needs to be moved after each switching of the laser beam to ensure that the processing position of the silicon wafer is within the focal length of the laser beam.

[0004] However, the position of the image acquisition device of the visual positioning system is fixed, so the positioning image initially acquired by the visual positioning system is no longer applicable. The visual positioning system needs to re-acquire the image of the workpiece and re-position it before continuing processing. However, re-acquisition of the positioning image and re-positioning may easily lead to other problems in subsequent processes, resulting in low processing efficiency. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a silicon wafer mold opening method and also provides a laser mold opening machine for implementing the mold opening method. By pre-doping the processing position of the target silicon wafer, the surface material can be more easily removed by laser in the subsequent mold opening process through laser doping, thereby improving the mold opening stability and the processing accuracy of the product. In addition, to implement this method, the laser mold opening machine of the present application In a first aspect, a silicon wafer mold opening method according to an embodiment of the present invention comprises the following steps: Loading: Use the suction mechanism to suck the target silicon wafer from the upstream process to the target position of the fixture, and the fixture will suck and fix the target silicon wafer; Acquire a processing reference, acquire image information of a target silicon wafer on a fixture by an image acquisition device, acquire one or two groups of diagonals of the target silicon wafer by analyzing the image information of the target silicon wafer by a system, use the midpoint of the diagonals or the intersection of the diagonals as a positioning reference of the target silicon wafer, and determine a processing position of the target silicon wafer by using the currently acquired positioning reference; Determine the processing trajectory. According to the image of the target silicon wafer and the determined processing position, the system generates and determines the processing trajectory of the target silicon wafer corresponding to the process; In the mold opening process, according to the determined processing position, the second light source outputs a second light beam to the processing position of the target silicon wafer, and the second light beam performs mold opening on the surface of the target silicon wafer according to a preset processing trajectory.

[0006] A silicon wafer mold opening method according to an embodiment of the present invention has at least the following beneficial effects: when the image acquisition device acquires a set of diagonal lines of the target silicon wafer, the midpoint of the diagonal lines is used as the positioning reference for the system to determine the processing position of the target silicon wafer; or, when the image acquisition device acquires two sets of diagonal lines of the target silicon wafer, the intersection of the two sets of diagonal lines is used as the positioning reference for the system to determine the processing position of the target silicon wafer. The positioning reference is quickly and accurately acquired and determined by the midpoint or intersection of the diagonal lines, and then the processing trajectory is generated by the determined positioning reference, thereby realizing efficient and accurate mold opening of the silicon wafer.

[0007] According to a silicon wafer mold opening method of an embodiment of the present invention, a processing reference is obtained, image information of a target silicon wafer on a fixture is obtained by two image acquisition devices, one or two groups of diagonals of the target silicon wafer are obtained by system analysis of the image information of the target silicon wafer, the midpoint of the diagonal or the intersection of the two groups of diagonals is used as a positioning reference for the target silicon wafer, and the processing position of the target silicon wafer is determined using the currently obtained positioning reference.

[0008] According to a silicon wafer mold opening method of an embodiment of the present invention, surface doping treatment is performed, a doping delivery mechanism and a first light source act on the processing position at the same time, the doping delivery mechanism delivers a silicon-containing medium to a determined processing position of the target silicon wafer, the first light source outputs a first light beam to perform laser heating on the processing position covered with the silicon-containing medium, the first light beam performs doping modification on the surface of the processing position according to a processing trajectory preset by the system, and after completing the surface doping treatment, the processing position is subjected to mold opening treatment.

[0009] According to a silicon wafer mold opening method of an embodiment of the present invention, a second image acquisition is required before the mold opening process to re-acquire the processing position of the target silicon wafer and determine the processing trajectory. The acquisition and determination method is the same as the acquisition method before the surface doping treatment.

[0010] According to a silicon wafer mold opening method of an embodiment of the present invention, a second image acquisition is required before the mold opening process to re-acquire the processing position of the target silicon wafer and determine the processing trajectory. The acquisition and determination method is the same as the acquisition method before the surface doping treatment, and the image acquired by the second positioning is consistent with the image acquired by the first positioning.

[0011] According to a silicon wafer mold opening method of an embodiment of the present invention, a fixture drives the target silicon wafer to rise and fall according to the focal length of the first light beam and the second light beam, and an image acquisition device can rise and fall simultaneously with the lifting of the fixture to achieve that the image acquired by the second positioning is consistent with the image acquired by the first positioning.

[0012] In a second aspect, a laser mold opening machine according to an embodiment of the present invention is used to implement the above-mentioned silicon wafer mold opening method, and the laser mold opening machine includes: A fixture, used to fix the silicon wafer; A first moving module, including a first lifting device, the fixture is connected to the first lifting device, the first moving module can drive the silicon wafer on the fixture to move to the processing range, and the first lifting device drives the fixture to the focusing range of the laser beam; The visual positioning module includes a second mobile module and an image acquisition device, the second mobile module includes a second lifting device, the image acquisition device is connected to the second lifting device, the second mobile module is used to drive the image acquisition device to move to the image acquisition range, and the second lifting device is used to adjust and keep the distance between the image acquisition device and the fixture unchanged; A doping output mechanism, adjacent to the jig, the doping output mechanism is used to deliver the doping medium to the processing position; The laser module comprises two groups of laser light sources. The laser beams of the two groups of laser light sources are respectively used for the doping process and the mold opening process of the silicon wafer. The fixture is arranged at the laser output end of the laser module.

[0013] A laser mold opening machine according to an embodiment of the present invention has at least the following beneficial effects: when switching the processing procedures of the workpiece, the laser beam has different focal lengths due to energy differences, so that the workpiece needs to be raised and lowered according to the focal length, and the visual positioning module of the present application can follow the lifting and lowering of the fixture to keep the distance between the image acquisition end and the workpiece unchanged, avoiding the need for repeated positioning of the workpiece due to changes in the position of the workpiece in the longitudinal direction, and can keep the positioning image provided by the visual positioning module consistent when the process is switched, which helps to reduce the processing procedures and improve production efficiency, and the positioning image can be kept consistent at all times to facilitate the processing of subsequent processes. Furthermore, the laser mold opening machine of the present application integrates doping and dual laser processing, so that the doping process and the mold opening process of the workpiece surface treatment can be completed on the same equipment, effectively improving production efficiency, and through the integrated design of the processing mechanism, the cost of the equipment is effectively reduced.

[0014] It should be noted that, after the doping output mechanism outputs the doping medium to the processing position of the workpiece, the first laser output mechanism simultaneously outputs a laser beam to the position and performs surface treatment on the position.

[0015] According to a laser mold opening machine of an embodiment of the present invention, two image acquisition devices are connected to the second lifting device, and the two image acquisition devices respectively acquire images of two viewing angles of the target silicon wafer to obtain two sets of diagonal positions of the target silicon wafer.

[0016] According to a laser mold opening machine of an embodiment of the present invention, the second movable module includes two second lifting devices and two image acquisition devices, the two image acquisition devices are respectively connected to the two second lifting devices, and the two image acquisition devices respectively acquire images of the target silicon wafer from two perspectives to obtain two sets of diagonal positions of the target silicon wafer.

[0017] According to a laser mold opening machine of an embodiment of the present invention, the laser module includes a first light source, a second light source and a laser output device, an optical path switching device is arranged between the first light source, the second light source and the laser output device, the optical path switching device is used to switch the connection between the first light source, the second light source and the laser output device, the laser light beams output by the first light source and the second light source can reach the processing position through the laser output device, and the laser light beams output by the first light source and the second light source are respectively used for the doping process and the mold opening process of the workpiece.

[0018] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which: Figure 1 A flow chart of a silicon wafer mold opening method according to an embodiment of the present invention; Figure 2 A structural diagram of a laser mold opening machine according to an embodiment of the present invention; Figure 3 is a structural diagram of an optical path switching device according to an embodiment of the present invention; Figure 4 A partial enlarged view of a laser mold opening machine according to an embodiment of the present invention; Figure 5 A partial cross-sectional view of an image acquisition device according to an embodiment of the present invention Figure 6 A simplified cross-sectional view of a fixture according to an embodiment of the present invention; Figure 7 FIG. 4 is a schematic diagram of the positions of the doping output mechanism and the fixture according to an embodiment of the present invention.

[0020] Description of reference numerals: Workpiece 1; Fixture 100; first lifting device 110; adsorption base 120; adsorption hole 121; Visual positioning module 200; second mobile module 210; second lifting device 211; image acquisition device 220; Doping output mechanism 300; Laser module 400; first light source 410; second light source 420; laser output device 430; optical path switching device 440; first sliding seat 441; first reflector 442; first reflector 443; second sliding seat 444; X-axis moving device 500; Y-axis moving device 600. DETAILED DESCRIPTION

[0021] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0022] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0023] In the description of the invention, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of the first or the second, it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0024] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0025] Reference Figure 1 , an embodiment of the present invention provides a silicon wafer mold opening method. The silicon wafer mold opening method of the present application comprises the following steps: Step 1: Loading, using the adsorption mechanism to suck the target silicon wafer from the upstream process to the target position of the fixture 100, and the fixture adsorbs and fixes the target silicon wafer; Optionally, the present application gives priority to using a vacuum adsorption fixture to fix the silicon wafer using negative pressure adsorption, which can prevent the silicon wafer from being damaged during processing or fixing, resulting in the silicon wafer being scrapped, increasing losses and raising production costs.

[0026] Step 2: Obtain the processing reference, obtain the image information of the target silicon wafer on the fixture through the image acquisition device, obtain one or two groups of diagonals of the target silicon wafer through system analysis of the image information of the target silicon wafer, use the midpoint of the diagonal line or the intersection of the diagonal line as the positioning reference of the target silicon wafer, and determine the processing position of the target silicon wafer with the currently acquired positioning reference; Optionally, a set of diagonal lines of the target silicon wafer is obtained, or two sets of diagonal lines of the target silicon wafer are obtained. Preferably, the present application preferably obtains two sets of diagonal lines of the target silicon wafer, and uses the intersection of the two sets of diagonal lines as a reference.

[0027] Step 3: Determine the processing trajectory. According to the image of the target silicon wafer and the determined processing position, the system generates and determines the processing trajectory of the target silicon wafer corresponding to the process; Step 4: Surface doping treatment. The doping delivery mechanism and the first light source act on the processing position at the same time. The doping delivery mechanism delivers the silicon-containing medium to the determined processing position of the target silicon wafer. The first light source outputs the first light beam to the processing position covered with the silicon-containing medium for laser heating. The first light beam dopes and modifies the surface of the processing position according to the processing trajectory preset by the system. After completing the surface doping treatment, the processing position is opened.

[0028] It can be understood that the first light beam heats the processing position and the silicon medium at the processing position, so that the boron element and silicon element on the surface of the processing position react with the heat to become silicon dioxide, so as to facilitate further processing in subsequent steps.

[0029] Step 5: mold opening processing. According to the determined processing position, the second light source outputs a second light beam to the processing position of the target silicon wafer, and the second light beam performs mold opening on the surface of the target silicon wafer according to a preset processing trajectory.

[0030] When the image acquisition device acquires a set of diagonal lines of the target silicon wafer, the midpoint of the diagonal lines is used as the positioning reference for the system to determine the processing position of the target silicon wafer; or, when the image acquisition device acquires two sets of diagonal lines of the target silicon wafer, the intersection of the two sets of diagonal lines is used as the positioning reference for the system to determine the processing position of the target silicon wafer. The positioning reference is quickly and accurately acquired and determined through the midpoint or intersection of the diagonal lines, and then the processing trajectory is generated through the determined positioning reference, so as to achieve efficient and accurate mold opening of the silicon wafer.

[0031] Furthermore, to improve the accuracy of positioning information, the present application obtains image information of the silicon wafer through two image acquisition devices 220, obtains two sets of diagonal lines of the target silicon wafer through system analysis, and uses the intersection of the two sets of diagonal lines as a processing reference to determine the processing position.

[0032] That is, image information of the target silicon wafer on the fixture is acquired through two image acquisition devices, one or two groups of diagonals of the target silicon wafer are acquired through system analysis of the image information of the target silicon wafer, the midpoint of the diagonal or the intersection of the two groups of diagonals is used as the positioning reference of the target silicon wafer, and the processing position of the target silicon wafer is determined based on the currently acquired positioning reference.

[0033] Furthermore, before the mold opening process, a second image acquisition is required to reacquire the processing position of the target silicon wafer and determine the processing trajectory. The acquisition and determination method is the same as the acquisition method before the surface doping process.

[0034] It can be understood that the first image acquisition before the surface doping treatment is the first processing positioning. After completing the surface doping treatment and before starting the mold opening process, a second processing positioning is required, and the method of obtaining and determining the positioning reference, processing position, and processing trajectory is the same as the first time.

[0035] Furthermore, after the doping treatment, the fixture 100 drives the target silicon wafer to rise and fall according to the focal length of the first light beam and the second light beam, and the image acquisition device 220 can rise and fall simultaneously with the fixture 100, so as to achieve the consistency of the image acquired by the second positioning and the image acquired by the first positioning. The purpose is to ensure that the images acquired twice during the surface doping treatment and the mold opening treatment remain consistent for the processing of the same target silicon wafer, so as to ensure that the processing quality and accuracy are improved. Moreover, the consistency of the images acquired twice during the surface doping treatment and the mold opening treatment can also simplify the system analysis of image information, so that the system can quickly determine the processing position and the processing trajectory of the corresponding process when switching processes, thereby improving the processing efficiency of silicon wafers and helping to increase production capacity.

[0036] To implement the silicon wafer mold opening method of the present application, refer to Figures 2 to 7The present application also provides a laser mold opening machine. The laser mold opening machine includes: a fixture 100, which is used to fix the silicon wafer; a first moving module, which includes a first lifting device 110, the fixture 100 is connected to the first lifting device 110, the first moving module can drive the silicon wafer on the fixture 100 to move to the processing range, and the first lifting device 110 drives the fixture 100 to the focusing range of the laser beam; a visual positioning module 200, which includes a second moving module 210 and an image acquisition device 220, the second moving module 210 includes a second lifting device 211, and the image acquisition device 220 is connected to the second lifting device On 211, the second movable module 210 is used to drive the image acquisition device 220 to move to the image acquisition range, and the second lifting device 211 is used to adjust and keep the distance between the image acquisition device 220 and the fixture 100 unchanged; the doping output mechanism 300 is adjacent to the fixture 100, and the doping output mechanism 300 is used to transport the doping medium to the processing position; the laser module 400 includes two groups of laser light sources, and the laser beams of the two groups of laser light sources are respectively used for the doping process and the mold opening process of the silicon wafer, and the fixture 100 is arranged at the laser output end of the laser module 400.

[0037] After obtaining the accurate processing position of the target silicon wafer through visual positioning, the surface of the processing position is doped and modified, and the doping and conveying mechanism conveys the silicon-containing medium to the processing position. At the same time, the first light beam heats the processing position covered with silicon elements. After being heated by laser processing, the boron element is doped into the silicon matrix, and the boron content in the BSG material on the surface of the silicon wafer will be reduced, forming a chemical reaction between the boron element and the silicon element when heated to generate silicon dioxide, so that in the subsequent mold opening process, the second light beam can more conveniently and efficiently remove the surface material on the processing position to complete the mold opening. Among them, the energy of the first light beam is higher than that of the second light beam. By doping and modifying the processing position in advance, the processing position of the silicon wafer can be better molded, and during the mold opening process, the second light beam can ensure the cleaning effect of the processing position, which not only effectively improves the mold opening efficiency, but also ensures the processing accuracy of the product.

[0038] Furthermore, in order to ensure that the images acquired during process switching remain consistent, that is, to ensure that the first image acquisition and the second image acquisition in the above-mentioned processing method remain consistent, the visual positioning module 200 of the present application can follow the lifting and lowering of the fixture 100 while maintaining the distance between the image acquisition end and the workpiece unchanged.

[0039] It is understandable that the second lifting device 211 has a follow-up function. That is, after the workpiece is placed on the fixture 100, before the first process is carried out, the visual positioning module 200 completes the first image positioning. At this time, the distance between the image acquisition end of the image acquisition device 220 and the fixture 100 is L. When the workpiece completes the first process and switches to the second process, due to the difference in the energy of the laser beams of the two groups of laser light sources, the focal lengths of the beams of the two groups of laser light sources are different when they are transmitted to the workpiece. In order to ensure that the processing position of the workpiece can be within the focusing range of the laser beam, the first lifting device 110 drives the fixture 100 to rise and fall when the process is switched according to the program instructions of the laser mold opening machine.

[0040] When the position of the jig 100 in the longitudinal direction changes, the distance L between the image acquisition end of the image acquisition device 220 and the jig 100 changes. At this time, the second lifting device 211 drives the image acquisition device 220 to rise and fall according to the program instructions of the laser mold opening machine until the distance between the image acquisition end of the image acquisition device 220 and the jig 100 is restored to L, so that the image information acquired by the image acquisition device 220 in each process can always be consistent, avoiding repeated positioning, and effectively improving production efficiency.

[0041] It should be noted that, after the doping output mechanism 300 outputs the doping medium to the processing position of the workpiece, the first laser output mechanism simultaneously outputs a laser beam to the position and performs surface treatment on the position.

[0042] According to some embodiments of the present application, two image acquisition devices 220 are connected to the second lifting device 211, and the two image acquisition devices 220 respectively acquire images of the target silicon wafer from two viewing angles to obtain two sets of diagonal positions of the target silicon wafer.

[0043] According to some embodiments of the present application, the second mobile module 210 includes two second lifting devices 211 and two image acquisition devices 220. The two image acquisition devices 220 are respectively connected to the two second lifting devices 211. The two image acquisition devices 220 respectively acquire images of the target silicon wafer from two perspectives to obtain two sets of diagonal positions of the target silicon wafer.

[0044] According to some embodiments of the present application, Figure 4As shown, the first moving module includes a first lifting device 110, an X-axis moving device 500 and a Y-axis moving device 600, the fixture 100 is connected to the first lifting device 110, the first lifting device 110 is arranged on the Y-axis moving device 600, the Y-axis moving device 600 is arranged on the X-axis moving device 500, the X-axis moving device 500 and the Y-axis moving device cooperate to drive the fixture 100 to move within the processing range of the laser beam, and the first lifting device 110 drives the adsorption fixture 100 to enter the beam focusing range of the laser module 400.

[0045] Specifically, Figure 4 As shown, the Y-axis moving device 600 includes a first base and a first drive installed on the first base, and the first lifting device 110 is connected to the output end of the first drive through a transmission component, and the first drive drives the first lifting device 110 to move along the Y-axis direction. Among them, in practical applications, the transmission component needs to be selected according to the type of the first drive. The present application preferably uses a motor as the first drive, and the transmission component is a screw transmission assembly. The screw transmission can ensure that the position adjustment of the workpiece is more accurate, which helps to ensure the processing accuracy of the product.

[0046] Optionally, the X-axis moving device 500 includes a second base and a second drive, the second drive is mounted on the second base, the first base is connected to the second base, and the second drive is connected to the first base via a transmission component. Specifically, the transmission component can be a screw transmission assembly, and the screw transmission can ensure that the position adjustment of the workpiece is more accurate, which helps to ensure the processing accuracy of the product.

[0047] By adjusting the position in the horizontal direction and the longitudinal direction, the workpiece of the fixture 100 can be moved to an accurate processing position, thereby ensuring the processing accuracy of the workpiece.

[0048] It should be noted that the adjustment of the processing position of the workpiece needs to be determined according to the type of laser beam used in the current process.

[0049] According to some embodiments of the present application, the laser module 400 includes a first light source 410, a second light source 420 and a laser output device 430. An optical path switching device 440 is arranged between the first light source 410, the second light source 420 and the laser output device 430. The optical path switching device 440 is used to switch the connection between the first light source 410, the second light source 420 and the laser output device 430. The laser light beams output by the first light source 410 and the second light source 420 can reach the processing position through the laser output device 430. The laser light beams output by the first light source 410 and the second light source 420 are respectively used for the doping process and the mold opening process of the workpiece.

[0050] Specifically, Figure 3As shown, there is a light propagation line between the first light source 410 and the laser output device 430. The light beam of the first light source 410 passes through the light propagation line and the laser output device 430 to dope and modify the processing position. The light path switching device 440 can be on the light propagation line. The light path switching device 440 is used to make the light beam of the second light source 420 pass through the light propagation line and the laser output device 430 to open the mold of the processing position.

[0051] It can be understood that the first light source 410 outputs a high-energy laser beam to the processing position of the workpiece to dope and modify the silicon element and silicon wafer at the processing position. After the doping process is completed, the optical path switching device 440 switches the first light source 410 and the second light source 420, cuts off the first light source 410, and transmits the laser beam of the second light source 420 to the processing position of the workpiece where the silicon element doping has been completed, and performs mold processing on the silicon wafer, that is, the laser light of the second light source 420 is used to remove the surface material of the silicon wafer that has been doped at this position, so that a large number of micro gaps and grooves are formed on the surface of the silicon wafer, thereby increasing the contact area between the silicon wafer and the backplane, which is beneficial to the collection and transmission of current, so as to expose the area of ​​the silicon wafer where solar energy is converted into electrical energy to the air as much as possible, thereby improving the battery conversion efficiency.

[0052] It should be noted that the specific output energy of the laser beams of the first light source 410 and the second light source 420 is set by the user according to actual needs.

[0053] According to some embodiments of the present application, the optical path switching device 440 includes a movable first reflector. When the first reflector 443442 moves to the light propagation path, the first reflector 443442 transmits the light beam of the second light source 420 to the laser output device 430, and outputs it to the processing position through the laser output device 430.

[0054] Optionally, the optical path switching device 440 includes a first sliding seat 441, and the first reflector 443442 is rotatably mounted on the first sliding seat 441. When the first slide moves to the light propagation path, the first reflector 443442 transmits the light beam of the second light source 420 to the laser output device 430. Furthermore, the refraction angle of the first reflector 443442 can be rotated to ensure that the light beam can smoothly and accurately enter the laser output device 430.

[0055] It can be understood that after the workpiece completes the doping process and before the mold opening process begins, by moving the first sliding seat 441 to a preset position on the light propagation path, one side of the first reflector 443442 intercepts and blocks the light beam of the first light source 410. At this time, the light beam of the second light source 420 can be refracted through the first reflector 443442 to the laser output device 430, and then output to the processing position, and the mold opening process of the workpiece begins.

[0056] On the contrary, when the first sliding seat 441 is moved out of the range of the light propagation path, the light beam of the first light source 410 can be directly transmitted along the light propagation path, while the light beam of the second light source 420 is refracted to other positions by the first reflector 443442 and cannot be refracted onto the workpiece. Alternatively, the second light source 420 is turned off, and when the mold opening process needs to be started, the first sliding seat 441 is moved to the preset position on the light propagation path, and the second light source 420 is started again and refracted to the laser output unit and then output to the processing position.

[0057] According to some embodiments of the present application, the light propagation circuit includes a second reflector, which transmits the light beam of the first light to the laser output device 430 , and the light path switching device 440 can be located between the second reflector and the laser output device 430 .

[0058] It is understandable that when the first light source 410 and the laser output device 430 are not on the same axis, the light beam of the first light source 410 can be refracted and transmitted to the laser output device 430 by utilizing the refraction of the light beam by the second reflector.

[0059] Optionally, the second reflector can be rotated to ensure that the first light beam can be accurately refracted to the laser output device 430. Specifically, a second sliding seat 444 can be provided at the bottom of the second reflector, and the second reflector and the second sliding seat 444 are rotatably connected.

[0060] like Figure 3 As shown, referring to the embodiment of the laser light source layout provided in the present application, the first light source 410 and the second light source 420 are located on both sides of the line connecting the second reflector and the laser output unit.

[0061] Specifically, as shown in the figure, the first laser output mechanism includes a first box body, the first box body includes a first box part and a second box part arranged in an L shape, the first box part is provided with a first light source 410, the second box part is provided with a light path switching unit and a laser output unit, and the second reflector is located at the junction of the first box part and the second box part. In addition, the second laser output mechanism includes a second box body, the second light source 420 is provided in the second box body, the second box body is provided with a light outlet, and the second box part is provided with a light inlet corresponding to the light outlet. The design of the L-shaped box body and the coordinated distribution of the two laser light sources make the structure of the device more compact and effectively reduce the overall occupied space of the device.

[0062] It should be noted that the number of second reflective elements can be increased according to the specific layout of the light source positions.

[0063] When switching the processing steps of the workpiece, the laser beam has different focal lengths due to energy differences, so that the workpiece needs to be raised and lowered according to the focal length. The visual positioning module 200 of the present application can follow the lifting and lowering of the fixture 100 to keep the distance between the image acquisition end and the workpiece unchanged, avoiding the need for repeated positioning of the workpiece due to changes in the position of the workpiece in the longitudinal direction. The positioning image provided by the visual positioning module 200 can remain consistent when the process is switched, which helps to reduce the processing steps and improve production efficiency. In addition, the positioning image can be kept consistent at all times to facilitate the processing of subsequent processes. Furthermore, the laser mold opening machine of the present application integrates doping and dual laser processing, so that the doping process and mold opening process of the workpiece surface treatment can be completed on the same equipment, effectively improving production efficiency, and through the integrated design of the processing mechanism, the cost of the equipment is effectively reduced.

[0064] like Figure 6 As shown, the adsorption fixture 100 of the present application includes an adsorption base 120 with a cavity and an adsorption power device (not shown in the figure), the adsorption base 120 is provided with an adsorption hole 121 connected to the cavity, the cavity is connected to the outside through the adsorption hole 121, and the adsorption power device (not shown in the figure) is connected to the cavity, and the adsorption power device (not shown in the figure) is used to make the cavity generate a negative pressure adsorption force to fix the workpiece on the adsorption base 120. When the workpiece is placed on the adsorption base 120 and pressed on the adsorption hole 121, the adsorption power device (not shown in the figure) is started and the air in the cavity of the adsorption base 120 is discharged, so that the cavity of the adsorption base 120 is in a negative pressure state, so that the workpiece is firmly adsorbed and fixed on the adsorption base 120. Through the adsorption fixing method, the surface of the workpiece can be prevented from being scratched, and the quality of the product can be guaranteed.

[0065] It should be noted that the adsorption force generated by the adsorption fixture 100 on the workpiece is adjustable, and the user can adjust the parameters of the adsorption power device (not shown) to control the magnitude of the adsorption force.

[0066] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0067] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A silicon wafer mold opening method, characterized in that: The following steps are involved: Loading: Use the suction mechanism to suck the target silicon wafer from the upstream process to the target position of the fixture, and the fixture will suck and fix the target silicon wafer; Acquire a processing reference, acquire image information of a target silicon wafer on a fixture by means of an image acquisition device (220), acquire one or two groups of diagonal lines of the target silicon wafer by means of system analysis of the image information of the target silicon wafer, use the midpoint of the diagonal line or the intersection of the two groups of diagonal lines as a positioning reference of the target silicon wafer, and determine a processing position of the target silicon wafer by means of the currently acquired positioning reference; Determine the processing trajectory. According to the image of the target silicon wafer and the determined processing position, the system generates and determines the processing trajectory of the target silicon wafer corresponding to the process; In the mold opening process, according to the determined processing position, the second light source (420) outputs a second light beam to the processing position of the target silicon wafer, and the second light beam performs mold opening on the surface of the target silicon wafer according to a preset processing trajectory.

2. A silicon wafer mold opening method according to claim 1, characterized in that: Acquire a processing reference, acquire image information of a target silicon wafer on a fixture through two image acquisition devices (220), acquire one or two groups of diagonals of the target silicon wafer through system analysis of the image information of the target silicon wafer, use the midpoint of the diagonals or the intersection of the two groups of diagonals as a positioning reference for the target silicon wafer, and determine the processing position of the target silicon wafer using the currently acquired positioning reference.

3. A silicon wafer mold opening method according to claim 1, characterized in that: In a surface doping treatment, a doping delivery mechanism and a first light source (410) act on a processing position simultaneously, the doping delivery mechanism delivers a silicon-containing medium to a determined processing position of a target silicon wafer, the first light source (410) outputs a first light beam to perform laser heating on the processing position covered with the silicon-containing medium, the first light beam performs doping modification on the surface of the processing position according to a processing trajectory preset by the system, and after the surface doping treatment is completed, the processing position is subjected to mold opening treatment.

4. A silicon wafer mold opening method according to claim 3, characterized in that: Before the mold opening process, a second image acquisition is required to re-acquire the processing position of the target silicon wafer and determine the processing trajectory. The acquisition and determination method is the same as the acquisition method before the surface doping process.

5. A silicon wafer mold opening method according to claim 3, characterized in that: Before the mold opening process, a second image acquisition is required to re-acquire the processing position of the target silicon wafer and determine the processing trajectory. The acquisition and determination method is the same as the acquisition method before the surface doping treatment. The image acquired by the second positioning is consistent with the image acquired by the first positioning.

6. A silicon wafer mold opening method according to claim 5, characterized in that: The fixture (100) drives the target silicon wafer to rise and fall according to the focal lengths of the first light beam and the second light beam, and the image acquisition device (220) can rise and fall simultaneously with the rise and fall of the fixture (100), so that the image acquired by the second positioning is consistent with the image acquired by the first positioning.

7. A laser mold opening machine, used to implement a silicon wafer mold opening method according to any one of claims 1 to 6, characterized in that: include: A fixture (100) for fixing the silicon wafer; A first moving module, comprising a first lifting device (110), the fixture (100) being connected to the first lifting device (110), the first moving module being capable of driving a silicon wafer on the fixture (100) to move to a processing range, and the first lifting device (110) driving the fixture (100) to within a focusing range of a laser beam; The visual positioning module (200) comprises a second movable module (210) and an image acquisition device (220), wherein the second movable module (210) comprises a second lifting device (211), the image acquisition device (220) is connected to the second lifting device (211), the second movable module (210) is used to drive the image acquisition device (220) to move to an image acquisition range, and the second lifting device (211) is used to adjust and maintain a distance between the image acquisition device (220) and the fixture (100) unchanged; A doping output mechanism (300) is adjacent to the jig (100), and the doping output mechanism (300) is used to transport the doping medium to a processing position; The laser module (400) comprises two groups of laser light sources, the laser beams of the two groups of laser light sources are respectively used for the doping process and the mold opening process of the silicon wafer, and the jig (100) is arranged at the laser output end of the laser module (400).

8. A laser mold opening machine according to claim 7, characterized in that: The two image acquisition devices (220) are connected to the second lifting device (211), and the two image acquisition devices (220) respectively acquire images of the target silicon wafer at two viewing angles to acquire two sets of diagonal positions of the target silicon wafer.

9. A laser mold opening machine according to claim 7, characterized in that: The second moving module (210) comprises two second lifting devices (211) and two image acquisition devices (220), the two image acquisition devices (220) being respectively connected to the two second lifting devices (211), and the two image acquisition devices (220) respectively acquiring images of the target silicon wafer at two viewing angles, so as to acquire two sets of diagonal positions of the target silicon wafer.

10. A laser mold opening machine according to claim 7, characterized in that: The laser module (400) comprises a first light source (410), a second light source (420) and a laser output device (430); an optical path switching device (440) is provided between the first light source (410), the second light source (420) and the laser output device (430); the optical path switching device (440) is used to switch the connection between the first light source (410), the second light source (420) and the laser output device (430); the laser beams output by the first light source (410) and the second light source (420) can both reach a processing position through the laser output device (430); the laser beams output by the first light source (410) and the second light source (420) are used in a doping process and a mold opening process of a workpiece, respectively.