Diffuser for cross flow structure and semiconductor processing equipment

Abstract

The invention provides a diffuser for a cross-flow structure and a semiconductor processing apparatus. The diffuser comprises an air inlet channel and a diffusion body. The diffusion body comprises an inclined surface cavity and a plurality of gas flow channels; the top of the center of the inclined plane cavity is communicated with the air inlet channel, the inclined plane cavity is provided with a top outline composed of a first inclined plane and a second inclined plane and a bottom outline composed of a third inclined plane and a fourth inclined plane, and the top outline and the bottom outline form an internal space with a large central space and a small edge space; an air inlet of each flow air channel is communicated with the bottom outline of the inclined surface cavity, and the lengths of the flow air channels are gradually reduced from the middle to the two sides of the edge.

Description

Technical Field

[0001] The present invention relates to semiconductor processing equipment and, more particularly, to diffusers. Background Art

[0002] In the high-K metal gate process, the atomic layer deposition (ALD) equipment using solid-state chemicals usually adopts a cross-flow structure with an inner and outer cavity design. Especially in the two layers of HfO2 and La2O3, the precursor is mixed through the mixer and enters the slit-shaped diffuser, then flows through the wafer from one side of the reaction chamber, and then flows to the exhaust end on the other side to be extracted out of the reaction chamber.

[0003] However, for slit-shaped diffusers, the chemical substances are not diffused uniformly, which may affect the uniformity of the film for existing or lower technology nodes. Summary of the invention

[0004] In order to overcome the problem that a slit-shaped diffuser causes uneven gas diffusion and thus affects film uniformity, the present invention provides a diffuser for a cross-flow structure.

[0005] The diffuser for the cross-flow structure provided by the present invention comprises: an air intake channel and a diffuser body.

[0006] The diffusion body includes a sloped chamber and a plurality of gas flow channels.

[0007] The central top of the inclined chamber is connected to the air inlet channel. The inclined chamber has a top contour composed of a first inclined plane and a second inclined plane and a bottom contour composed of a third inclined plane and a fourth inclined plane. The top contour and the bottom contour form an internal space with a large central space and a small edge space.

[0008] The air inlet of each air flow channel is communicated with the bottom contour of the inclined chamber, and the length of each air flow channel is arranged to gradually decrease from the middle to both sides of the edge.

[0009] In one embodiment, the slope chamber is used to store and homogenize the gas from the air inlet channel, the first slope and the second slope are symmetrically distributed and have the same slope, the third slope and the fourth slope are symmetrically distributed and have the same slope, and the slopes of the third slope and the fourth slope are smaller than the slopes of the first slope and the second slope.

[0010] In one embodiment, the first slope has a high side and a low side; the second slope has a high side and a low side; the high side of the first slope and the high side of the second slope are both connected to the air inlet channel, and the air inlet channel is located at the central top position of the slope chamber.

[0011] In one embodiment, the third slope has a high side and a low side; the fourth slope has a high side and a low side; the high side of the third slope is connected to the high side of the fourth slope, and the connection is the longest distance from the central top position of the slope chamber.

[0012] In one embodiment, a low side of the third inclined surface is connected to a low side of the first inclined surface; and a low side of the fourth inclined surface is connected to a low side of the second inclined surface.

[0013] In one embodiment, the slopes of the third inclined surface and the fourth inclined surface are 30 degrees.

[0014] In one embodiment, each of the air flow channels has an air inlet and an air outlet, and the air inlets are arranged one by one along the bottom contour and communicated with the inclined chamber.

[0015] In one embodiment, the air outlets of the plurality of air flow channels are arranged to have a profile that is horizontally distributed.

[0016] In one embodiment, the air outlets of the plurality of air flow channels have a profile that is low in the middle and high on both sides of the edges.

[0017] In one embodiment, each of the air flow channels has a first section and a second section, wherein the aperture of the first section is smaller than the aperture of the second section, one end of the first section is connected to the air inlet, one end of the second section is connected to the air outlet, and the other end of the first section is connected to the other end of the second section.

[0018] In one embodiment, the apertures of the first section of each gas flow channel are distributed from small to large from the middle to the edge.

[0019] In one embodiment, the second section of each gas flow channel is distributed from small to large aperture from the middle to the edge.

[0020] The present invention also provides a semiconductor processing device, comprising a reaction chamber having a support member; a diffuser for a cross-flow structure as described above, located above the top of one side of the reaction chamber; and an exhaust pump located below the other side of the reaction chamber; wherein, after the gas flows into the diffuser, it diffuses into the reaction chamber through the diffuser, the gas flows horizontally across the surface of the support member, and is extracted by the exhaust pump.

[0021] The diffuser of the present invention has a gas mixing chamber (slope chamber) with an inner slope structure, and a gas uniformity structure with large and small holes is added under the gas mixing chamber. By changing the edge and center flow resistance distribution and the gas uniformity hole position, the gas distribution can be improved, the film uniformity can be improved, and particulate matter can be reduced. In addition, the present invention can also add a fan-shaped structure or a symmetrical slope structure on the lower surface of the diffuser, extend the flow channel length at the corresponding position, increase the flow resistance of the central part, reduce the flow resistance of the relative edge, improve the gas distribution between the center and the edge, improve the film uniformity, and reduce particulate matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above invention content and the following specific embodiments of the present invention will be better understood when read in conjunction with the accompanying drawings. It should be noted that the accompanying drawings are only examples of the claimed invention. In the accompanying drawings, the same reference numerals represent the same or similar elements.

[0023] Figure 1 An exploded view of a semiconductor processing apparatus having a diffuser is shown;

[0024] Figure 2 A cross-sectional view of a semiconductor processing apparatus having a diffuser is shown;

[0025] Figure 3 A top view of a diffuser according to an embodiment of the present invention is shown;

[0026] Figure 4 A side cross-sectional view showing a diffuser according to an embodiment of the present invention;

[0027] Figure 5 A top view of a diffuser according to an embodiment of the present invention is shown;

[0028] Figure 6 A side cross-sectional view of a diffuser according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0029] The detailed features and advantages of the present invention are described in detail in the specific embodiments below, and the content is sufficient to enable any person skilled in the art to understand the technical content of the present invention and implement it accordingly, and according to the description, claims and drawings disclosed in this specification, those skilled in the art can easily understand the relevant purposes and advantages of the present invention. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this embodiment. On the contrary, the purpose of introducing the invention in conjunction with the embodiment is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, many specific details will be included in the following description. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0030] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0032] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, channels, components, regions, layers and / or parts, these components, channels, components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, components, regions, layers and / or parts. In addition, the terms "first", "second", "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0033] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0034] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

[0035] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0036] Figure 1 FIG. 1 shows an exploded view of a semiconductor processing apparatus having a diffuser. The diffuser is used in a cross-flow configuration. Figure 1 As shown, the gas (eg precursor) flows in the direction indicated by the arrows. After the gas flows into the diffuser 101 , it diffuses into the reaction chamber through the diffuser, flows horizontally across the surface of the support, and is finally pumped out by the pump 102 .

[0037] Figure 2 FIG. 4 shows a cross-sectional view of a semiconductor processing apparatus having a diffuser. The diffuser is used in a cross-flow configuration. Figure 2 As shown, the semiconductor processing equipment is located in a vacuum chamber 204. The semiconductor processing equipment has a cross-flow structure, and includes a diffuser 205, a reaction chamber 200, and an exhaust pump 202. The diffuser 205 is located on the top surface of one side of the reaction chamber 200. The gas flows into the inlet channel 201 of the diffuser 205, and the inlet channel 201 is arranged in a horizontal direction. The gas flows in from the diffuser port of the diffuser 205 from the top of one side of the reaction chamber 200 in a vertical direction, flows horizontally through the support member 203, and then flows out from the bottom of the other side of the reaction chamber 200, and is extracted by the exhaust pump 202.

[0038] Figure 3 A bottom view of a diffuser according to an embodiment of the present invention is shown. Figure 4 A side cross-sectional view of a diffuser according to an embodiment of the present invention is shown.

[0039] Combination Figure 3 and Figure 4 The diffuser includes an air inlet passage 301 and a diffuser body 302 . The diffuser body 302 includes a sloped chamber 304 and a plurality of air flow passages 309 .

[0040] The central top of the inclined chamber 304 is connected to the air inlet channel 301 , and the inclined chamber 304 is used to store and homogenize the gas from the air inlet channel 301 .

[0041] The inclined surface chamber 304 has a first inclined surface 305, a second inclined surface 306, a third inclined surface 307 and a fourth inclined surface 308. The first inclined surface 305, the second inclined surface 306, the third inclined surface 307 and the fourth inclined surface 308 constitute the cavity profile of the inclined surface chamber 304, wherein the first inclined surface 305 and the second inclined surface 306 constitute the top profile, and the third inclined surface 307 and the fourth inclined surface 308 constitute the bottom profile. The top profile and the bottom profile form an internal space with a large central space and a small edge space.

[0042] The first inclined surface 305 and the second inclined surface 306 are symmetrically distributed and have the same inclination.

[0043] The first inclined surface 305 has a high side and a low side.

[0044] The second sloped surface 306 has a high side and a low side.

[0045] The high side of the first inclined surface 305 and the high side of the second inclined surface 306 are both connected to the air inlet channel 301 , and the air inlet channel 301 is located at the central top position of the inclined surface chamber 304 .

[0046] The third inclined surface 307 and the fourth inclined surface 308 are symmetrically distributed and have the same inclination.

[0047] In one embodiment, the slopes of the third inclined surface and the fourth inclined surface are 30 degrees.

[0048] The inclinations of the third inclined surface 307 and the fourth inclined surface 308 are smaller than the inclinations of the first inclined surface 305 and the second inclined surface 306 .

[0049] The third inclined surface 307 has a high side and a low side.

[0050] The fourth slope 308 has a high side and a low side.

[0051] The high side of the third inclined surface 307 is connected to the high side of the fourth inclined surface 308, and the connection point is the longest distance from the central top position of the inclined surface chamber, see Figure 4 The advantage of such a configuration is that the inner space of the inclined chamber 304 is arranged with a large central space and a small edge space, so as to lengthen the flow resistance of the intermediate airflow, so that the gas can be better uniformed in the inclined chamber 304.

[0052] The lower side of the third inclined surface 307 is connected to the lower side of the first inclined surface 305 .

[0053] A lower side of the fourth inclined surface 308 is connected to a lower side of the second inclined surface 306 .

[0054] The air inlet of each air flow channel 309 is connected to the bottom contour of the inclined chamber 304, and the length of each air flow channel 309 is arranged to gradually decrease from the middle to both sides of the edge.

[0055] Specifically, each air flow channel 309 has an air inlet and an air outlet. The air inlet of each air flow channel 309 is arranged one by one close to the third inclined surface 307 and the fourth inclined surface 308, and is connected to the inclined surface chamber 304. The gas in the inclined surface chamber 304 enters the air flow channel 309 through the air inlet and is output from the air outlet. The air outlets are horizontally distributed.

[0056] Since the air inlet of each gas flow channel is arranged one by one along the third and fourth inclined surfaces, and the air outlets are all horizontally distributed, the length of each gas flow channel gradually shortens from the middle to the sides. The advantage of this design is that the center is a longer flow channel and the edge flow channel is relatively short. Since the central flow channel is long, the corresponding flow resistance increases, so that the reaction gas can not be too concentrated in the center of the reaction chamber, but can be evenly distributed in the center and the periphery, making the deposition more uniform.

[0057] In one embodiment, each gas flow channel 309 has a first section 310 and a second section 311, wherein the aperture of the first section 310 is smaller than the aperture of the second section 311. One end of the first section 310 is connected to the air inlet, one end of the second section 311 is connected to the air outlet, and the other end of the first section is connected to the other end of the second section.

[0058] In one embodiment, the apertures of the first section of each gas flow channel are distributed from small to large from the middle to the edge.

[0059] In one embodiment, the diameter of the first section of the gas flow channel is in the range of 0.1 to 1 mm.

[0060] In one embodiment, the second section of each gas flow channel is distributed from small to large aperture from the middle to the edge.

[0061] In one embodiment, the diameter of the second section of the gas flow channel located in the middle is in the range of 1 to 5 mm.

[0062] In one embodiment, the diameter of the second section of the gas flow channel located at the edge is in the range of 1 to 6 mm.

[0063] The reaction gas (or precursor) is introduced into the inclined chamber through the air inlet channel for homogenization, and then homogenized by the two-stage air flow channel. The edge and center flow resistance distribution is changed. In addition, the air flow channel is also distributed with a small aperture in the center and a large aperture at the edge. The aperture gradually increases from the center to the edge, which is conducive to uniform diffusion of the gas and reduces particulate matter.

[0064] Figure 5 A top view of a diffuser according to an embodiment of the present invention is shown. Figure 6 A side cross-sectional view of a diffuser according to an embodiment of the present invention is shown.

[0065] Combination Figure 5 and Figure 6 The diffuser includes an air inlet passage 501 and a diffuser body 502 . The diffuser body 502 includes a slope chamber 504 and a plurality of air flow passages 509 .

[0066] The inclined chamber 504 is used to store and homogenize the gas from the inlet channel 501 .

[0067] The inclined surface chamber 504 has a first inclined surface 505, a second inclined surface 506, a third inclined surface 507 and a fourth inclined surface 508. The first inclined surface 505, the second inclined surface 506, the third inclined surface 507 and the fourth inclined surface 508 constitute the cavity profile of the inclined surface chamber 504, wherein the first inclined surface 505 and the second inclined surface 506 constitute the top profile, and the third inclined surface 507 and the fourth inclined surface 508 constitute the bottom profile. The top profile and the bottom profile form an internal space with a large central space and a small edge space.

[0068] The first inclined surface 505 and the second inclined surface 506 are symmetrically distributed and have the same inclination.

[0069] The first inclined surface 505 has a high side and a low side.

[0070] The second sloped surface 506 has a high side and a low side.

[0071] The high side of the first inclined surface 505 and the high side of the second inclined surface 506 are both connected to the air inlet channel 501 , and the air inlet channel 501 is located at the central top position of the inclined surface chamber 504 .

[0072] The third inclined surface 507 and the fourth inclined surface 508 are symmetrically distributed and have the same inclination.

[0073] In one embodiment, the slopes of the third inclined surface and the fourth inclined surface are 30 degrees.

[0074] The inclinations of the third inclined surface 507 and the fourth inclined surface 508 are smaller than the inclinations of the first inclined surface 505 and the second inclined surface 506 .

[0075] The third inclined surface 507 has a high side and a low side.

[0076] The fourth slope 508 has a high side and a low side.

[0077] The high side of the third inclined surface 507 is connected to the high side of the fourth inclined surface 508, and the connection point is the longest distance from the central top position of the inclined surface chamber, see Figure 6 The advantage of such a configuration is that the inner space of the inclined chamber 504 is arranged with a large central space and a small edge space, so as to lengthen the flow resistance of the intermediate airflow, so that the gas can be better uniformed in the inclined chamber 504.

[0078] The lower side of the third inclined surface 507 is connected to the lower side of the first inclined surface 505 .

[0079] A lower side of the fourth inclined surface 508 is connected to a lower side of the second inclined surface 506 .

[0080] The air inlet of each air flow channel 509 is connected to the bottom contour of the inclined chamber 504, and the length of each air flow channel 509 is arranged to gradually decrease from the middle to both sides of the edge.

[0081] Specifically, each air flow channel 509 has an air inlet and an air outlet. The air inlets of each air flow channel 509 are arranged one by one along the third slope 507 and the fourth slope 508, and are connected to the slope chamber 504. The gas in the slope chamber 504 enters the air flow channel 509 through the air inlet and is output from the air outlet. The bottom surface of each air outlet forms a contour that is low in the middle and high on both sides of the edge, wherein the air outlet located in the center is the lowest point of the contour, and the air outlets located at the extreme edges of the left and right sides are the highest points of the contour. The contour can be a fan-shaped or a symmetrically distributed sloped shape with a low middle and high sides. Figure 3 and Figure 4 The air flow channel design Figure 5 and Figure 6 The gas flow channel in the middle part is further extended. The advantage of this design is that increasing the length of the flow channel at the center can increase the corresponding flow resistance, so that the reaction gas will not be too concentrated in the center of the reaction chamber, but can be evenly distributed in the center and the periphery, making the deposition more uniform.

[0082] In one embodiment, each gas flow channel 509 has a first section 510 and a second section 511, wherein the aperture of the first section 510 is smaller than the aperture of the second section 511. One end of the first section 510 is connected to the air inlet, one end of the second section 511 is connected to the air outlet, and the other end of the first section is connected to the other end of the second section.

[0083] In one embodiment, the apertures of the first section of the gas flow channel are distributed from small to large from the middle to the edge.

[0084] In one embodiment, the diameter of the first section of the gas flow channel is in the range of 0.1 to 1 mm.

[0085] In one embodiment, the apertures of the second section of the gas flow channel are distributed from small to large from the middle to the edge.

[0086] In one embodiment, the diameter of the second section of the gas flow channel located in the middle is in the range of 1 to 5 mm.

[0087] In one embodiment, the diameter of the second section of the gas flow channel located at the edge is in the range of 1 to 6 mm.

[0088] The reaction gas (or precursor) is introduced into the inclined chamber through the air inlet channel for homogenization, and then homogenized by the two-stage air flow channel. The flow resistance distribution at the edge and center is changed. In addition, the air flow channel is also distributed with a small aperture in the center and a large aperture at the edge. The aperture gradually increases from the center to the edge, which is conducive to uniform diffusion of gas and reduces particulate matter. In addition, the present invention can add a fan-shaped structure or a symmetrical slope structure to the lower surface of the diffuser, extend the flow channel length at the corresponding position, increase the flow resistance of the central part, reduce the flow resistance at the relative edge, improve the gas distribution at the center and edge, improve the uniformity of the film, and reduce particulate matter.

[0089] The terms and expressions used above are for descriptive purposes only, and the present invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean to exclude any equivalent features of the illustrations and descriptions (or parts thereof), and it should be recognized that various modifications that may exist should also be included in the scope of the claims. Other modifications, changes and substitutions may also exist. Accordingly, the claims should be deemed to cover all such equivalents.

[0090] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus facilitate the understanding of one or more embodiments of the invention, in the foregoing description of the embodiments of this application, multiple features are sometimes combined into one embodiment, drawing or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims.

[0091] Similarly, it should be pointed out that although the present invention has been described with reference to the current specific embodiments, ordinary technicians in this technical field should realize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions may be made without departing from the spirit of the present invention. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present invention, they will fall within the scope of the claims of this application.

Claims

1. A diffuser for a cross-flow structure, characterized in that: include: Intake duct and diffuser body; The diffusion body includes a sloped chamber and a plurality of air flow channels; The central top of the inclined chamber is connected to the air inlet channel, and the inclined chamber has a top contour composed of a first inclined plane and a second inclined plane, and a bottom contour composed of a third inclined plane and a fourth inclined plane, and the top contour and the bottom contour form an internal space with a large central space and a small edge space; The air inlet of each air flow channel is communicated with the bottom contour of the inclined chamber, and the length of each air flow channel is arranged to gradually decrease from the middle to both sides of the edge.

2. The diffuser for a cross-flow structure according to claim 1, characterized in that: The inclined surface chamber is used to store and homogenize the gas from the air inlet passage, the first inclined surface and the second inclined surface are symmetrically distributed and have the same slope, the third inclined surface and the fourth inclined surface are symmetrically distributed and have the same slope, and the slopes of the third inclined surface and the fourth inclined surface are smaller than the slopes of the first inclined surface and the second inclined surface.

3. The diffuser for a cross-flow structure according to claim 1, characterized in that: The first slope has a high side and a low side; the second slope has a high side and a low side; the high side of the first slope and the high side of the second slope are both connected to the air inlet channel, and the air inlet channel is located at the central top position of the slope chamber.

4. The diffuser for a cross-flow structure according to claim 1, characterized in that: The third slope has a high side and a low side; the fourth slope has a high side and a low side; the high side of the third slope is connected to the high side of the fourth slope, and the connection is the longest distance from the central top position of the slope chamber.

5. The diffuser for a cross-flow structure according to claim 1, characterized in that: The lower side of the third inclined surface is connected to the lower side of the first inclined surface; the lower side of the fourth inclined surface is connected to the lower side of the second inclined surface.

6. The diffuser for a cross-flow structure according to claim 1, characterized in that: The inclination of the third inclined surface and the fourth inclined surface is 30 degrees.

7. The diffuser for a cross-flow structure according to claim 1, characterized in that: Each of the air flow channels has an air inlet and an air outlet. The air inlets are arranged one by one along the bottom contour and are communicated with the inclined chamber.

8. The diffuser for a cross-flow structure according to claim 7, characterized in that: The air outlets of the plurality of air flow channels are arranged in a horizontally distributed profile.

9. The diffuser for a cross-flow structure according to claim 7, characterized in that: The air outlets of the plurality of air flow channels have a profile that is low in the middle and high on both sides of the edges.

10. The diffuser for a cross-flow structure according to claim 7, characterized in that: Each of the air flow channels has a first section and a second section, wherein the aperture of the first section is smaller than the aperture of the second section, one end of the first section is connected to the air inlet, one end of the second section is connected to the air outlet, and the other end of the first section is connected to the other end of the second section.

11. The diffuser for a cross-flow structure according to claim 7, characterized in that: The first section of each gas flow channel is distributed from small to large according to the aperture from the middle to the edge.

12. The diffuser for a cross-flow structure according to claim 7, characterized in that: The second section of each gas flow channel is distributed from small to large in terms of aperture from the middle to the edge.

13. A semiconductor processing device, characterized in that: include: a reaction chamber having a support; The diffuser for the cross-flow structure according to any one of claims 1 to 12, located above the top of one side of the reaction chamber; an air pump located at the lower side of the other side of the reaction chamber; After the gas flows into the diffuser, it diffuses into the reaction chamber through the diffuser, and the gas flows horizontally across the surface of the support member and is pumped out by the vacuum pump.

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