Gallium nitride-based semiconductor laser chip

Abstract

The gallium nitride-based semiconductor laser chip sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, a vortex topological charge modulation layer is arranged between the lower waveguide layer and the lower limiting layer, and the thickness of the vortex topological charge modulation layer is 0.5-500 nm. By controlling the azimuth gradient of the interface phase, the vortex topological charge is amplified, the purity of the topological charge is improved, a light-substance-polarized laser mixed coupling interface is formed, full-angle birefringence modulation of coherent phonon ultrafast optics is induced, nonlinear optics is changed, photons are captured, the lens effect is generated, light field dispersion is restrained, and the polarization effect is improved. Therefore, the substrate mode leakage is inhibited, and the far-field FFP image quality is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser chip. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes.

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser is up to KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems:

[0009] 1) The large internal lattice mismatch and strain cause strong polarization effect, and the QCSE quantum confined Stark effect strongly limits the improvement of the laser lasing gain;

[0010] 2) The optical waveguide absorption loss is high. Intrinsic carbon impurities in p-type semiconductors will compensate for acceptors and destroy p-type. The ionization rate of p-type doping is low, and a large amount of unionized Mg acceptor impurities will cause internal optical losses to increase.

[0011] 3) Increasing the thickness of the lower confinement layer can reduce the refractive index of the confinement layer, but the increase in the thickness of the lower confinement layer will limit the range of component regulation, which is prone to problems such as cracking, bending and quality degradation; at the same time, the light field mode leaks into the substrate to form a standing wave, which will lead to low substrate mode suppression efficiency and poor far-field image FFP quality.

[0012] 4) The activation energy of the Mg acceptor in the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, and the hole mobility is much lower than the electron mobility, resulting in serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, uneven gain, broadening of the laser gain spectrum, and decreased peak gain. Summary of the invention

[0013] The present invention proposes a gallium nitride-based semiconductor laser chip, which amplifies the vortex topological charge by controlling the azimuthal gradient of the interface phase, improves the purity of the topological charge, forms a light-matter-polarimetric laser hybrid coupling interface, induces full-angle birefringence modulation of coherent phonon ultrafast optics, changes nonlinear optics and captures photons, produces a lens effect, suppresses light field dispersion, and further suppresses substrate mode leakage, thereby improving the far-field FFP image quality.

[0014] The present invention provides a gallium nitride-based semiconductor laser chip, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. A vortex topological charge modulation layer is provided between the lower waveguide layer and the lower confinement layer, and the thickness of the vortex topological charge modulation layer is 0.5 to 500 nm.

[0015] Preferably, the electron effective mass distribution of the vortex topological charge modulation layer has a function y=A+B*e x / x second quadrant curve distribution; the electron effective mass of the lower confinement layer ≥ the electron effective mass of the vortex topological charge modulation layer ≥ the electron effective mass of the lower waveguide layer;

[0016] The elastic coefficient distribution of the vortex topological charge modulation layer has a function y=C+D*xe x Curve distribution; the elastic coefficient of the lower confinement layer ≥ the elastic coefficient of the vortex topological charge modulation layer ≥ the elastic coefficient of the lower waveguide layer;

[0017] The lattice constant distribution of the vortex topological charge modulation layer has a function y=E+F*x / lnx curve distribution; the lattice constant of the lower waveguide layer ≥ the lattice constant of the vortex topological charge modulation layer ≥ the lattice constant of the lower confinement layer;

[0018] The electron mobility distribution of the vortex topological charge modulation layer has the function y=G+H*e x / lnx curve distribution; the electron mobility of the lower waveguide layer ≥ the electron mobility of the vortex topological charge modulation layer ≥ the electron mobility of the lower confinement layer;

[0019] The vortex topological charge modulation layer has the following relationship: G≥C≥E≥A.

[0020] Preferably, the In / C element ratio distribution of the vortex topological charge modulation layer has a function y=J+K*e x / lnx curve distribution; the In / C element ratio of the lower waveguide layer ≥ the In / C element ratio of the vortex topological charge modulation layer ≥ the In / C element ratio of the lower confinement layer;

[0021] The In / H element ratio distribution of the vortex topological charge modulation layer has a function y=L+M*e x / lnx curve distribution; the In / H element ratio of the lower waveguide layer ≥ the In / H element ratio of the vortex topological charge modulation layer ≥ the In / H element ratio of the lower confinement layer;

[0022] The In / O element ratio distribution of the vortex topological charge modulation layer has a function y=P+Q*e x / lnx curve distribution; the In / O element ratio of the lower waveguide layer ≥ the In / O element ratio of the vortex topological charge modulation layer ≥ the In / O element ratio of the lower confinement layer;

[0023] The In / C element ratio distribution, In / H element ratio distribution, and In / O element ratio distribution of the vortex topological charge modulation layer have the following relationship: J≥P≥L.

[0024] Preferably, the vortex topological charge modulation layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0025] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 80 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

[0026] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0027] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0028] Compared with the prior art, the gallium nitride-based semiconductor laser chip provided by the embodiment of the present invention has the beneficial effect that the vortex topological charge modulation layer amplifies the vortex topological charge by controlling the azimuthal gradient of the interface phase, improves the purity of the topological charge, forms a light-matter-polarimetric laser hybrid coupling interface, induces full-angle birefringence modulation of coherent phonon ultrafast optics, changes nonlinear optics and captures photons, produces a lens effect, suppresses light field dispersion, and thereby suppresses substrate mode leakage, thereby improving far-field FFP image quality.

[0029] At the same time, the vortex topological charge of the vortex topological charge modulation layer breaks the laser symmetry, strengthens the periodic component on the self-imaging plane, makes the vortex topological charge self-consistent in the repeated conversion of defects, reduces the intra-cavity loss of the laser, and performs non-reciprocal orbital angular momentum conversion through the vortex topological charge, regulates the Fermi energy level and hybridizes the polariton wave vector space to form a strongly coupled and localized light field, thereby generating extremely strong light field compression, reducing the focusing of polaritons to the sub-diffraction limited spot size, reducing the laser focusing spot size and forming a laser focus of several times more. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 is a schematic structural diagram of a gallium nitride-based semiconductor laser chip according to an embodiment of the present invention;

[0031] Reference numerals: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: upper confinement layer, 106: vortex topological charge modulation layer. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] In order to solve the above problems, a gallium nitride-based semiconductor laser chip provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0034] Reference Figure 1The present invention provides a gallium nitride-based semiconductor laser chip, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A vortex topological charge modulation layer 106 is provided between the lower waveguide layer 102 and the lower confinement layer 101. The thickness of the vortex topological charge modulation layer 106 is 0.5 to 500 nm. The vortex topological charge modulation layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / A Any one or any combination of InGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0035] In the present invention, the electron effective mass distribution of the vortex topological charge modulation layer 106 has a function y=A+B*e x / x 2 The curve distribution of the second quadrant: the electron effective mass of the lower confinement layer 101 ≥ the electron effective mass of the vortex topological charge modulation layer 106 ≥ the electron effective mass of the lower waveguide layer 102;

[0036] The elastic coefficient distribution of the vortex topological charge modulation layer 106 has a function y=C+D*xe x Curve distribution; the elastic coefficient of the lower confinement layer 101 ≥ the elastic coefficient of the vortex topological charge modulation layer 106 ≥ the elastic coefficient of the lower waveguide layer 102;

[0037] The lattice constant distribution of the vortex topological charge modulation layer 106 has a function y=E+F*x / lnx curve distribution; the lattice constant of the lower waveguide layer 102 ≥ the lattice constant of the vortex topological charge modulation layer 106 ≥ the lattice constant of the lower confinement layer 101;

[0038] The electron mobility distribution of the vortex topological charge modulation layer 106 has a function y=G+H*e x / lnx curve distribution; the electron mobility of the lower waveguide layer 102 ≥ the electron mobility of the vortex topological charge modulation layer 106 ≥ the electron mobility of the lower confinement layer 101;

[0039] The vortex topological charge modulation layer 106 has the following relationship: G≥C≥E≥A.

[0040] In the present invention, the In / C element ratio distribution of the vortex topological charge modulation layer 106 has a function y=J+K*e x / lnx curve distribution; the In / C element ratio of the lower waveguide layer 102 ≥ the In / C element ratio of the vortex topological charge modulation layer 106 ≥ the In / C element ratio of the lower confinement layer 101;

[0041] The In / H element ratio distribution of the vortex topological charge modulation layer 106 has a function y=L+M*e x / lnx curve distribution; the In / H element ratio of the lower waveguide layer 102 ≥ the In / H element ratio of the vortex topological charge modulation layer 106 ≥ the In / H element ratio of the lower confinement layer 101;

[0042] The In / O element ratio distribution of the vortex topological charge modulation layer 106 has a function y=P+Q*e x / lnx curve distribution; the In / O element ratio of the lower waveguide layer 102 ≥ the In / O element ratio of the vortex topological charge modulation layer 106 ≥ the In / O element ratio of the lower confinement layer 101;

[0043] The In / C element ratio distribution, In / H element ratio distribution, and In / O element ratio distribution of the vortex topological charge modulation layer 106 have the following relationship: J≥P≥L.

[0044] The vortex topological charge modulation layer 106 amplifies the vortex topological charge by controlling the azimuthal gradient of the interface phase, improves the purity of the topological charge, forms a light-matter-polarization laser hybrid coupling interface, induces full-angle birefringence modulation of coherent phonon ultrafast optics, changes nonlinear optics and captures photons, produces a lens effect, suppresses light field dispersion, and thereby suppresses substrate mode leakage, thereby improving far-field FFP image quality.

[0045] At the same time, the vortex topological charge of the vortex topological charge modulation layer 106 breaks the laser symmetry, strengthens the periodic component on the self-imaging plane, makes the vortex topological charge self-consistent in the repeated conversion of defects, reduces the intracavity loss of the laser, and performs non-reciprocal orbital angular momentum conversion through the vortex topological charge, regulates the Fermi level and hybridizes the polariton wave vector space, forms a strongly coupled and localized light field, and then generates extremely strong light field compression, reduces the polaritons focusing on the sub-diffraction limited spot size, reduces the laser focusing spot size and forms a laser focus of several times more. Compared with traditional lasers, the data are as follows:

[0046] Blue Laser Project Conventional laser Laser of the present invention Range of change <![CDATA[Beam quality factor M 2 > 3.7 1.17 216％ Focused spot size (nm) >250 <10

[0047] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

[0048] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0049] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0050] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A gallium nitride-based semiconductor laser chip, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A vortex topological charge modulation layer (106) is provided between the lower waveguide layer (102) and the lower confinement layer (101), and the thickness of the vortex topological charge modulation layer (106) is 0.5 to 500 nm; the electron effective mass distribution of the vortex topological charge modulation layer (106) has a function y=A+B*e x / x 2 The curve distribution of the second quadrant: the electron effective mass of the lower confinement layer (101) ≥ the electron effective mass of the vortex topological charge modulation layer (106) ≥ the electron effective mass of the lower waveguide layer (102).

2. A gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The elastic coefficient distribution of the vortex topological charge modulation layer (106) has a function y=C+D*xe x Curved distribution; the elastic coefficient of the lower confinement layer (101) ≥ the elastic coefficient of the vortex topological charge modulation layer (106) ≥ the elastic coefficient of the lower waveguide layer (102).

3. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The lattice constant distribution of the vortex topological charge modulation layer (106) has a function y=E+F*x / lnx curve distribution; the lattice constant of the lower waveguide layer (102) is ≥ the lattice constant of the vortex topological charge modulation layer (106) ≥ the lattice constant of the lower confinement layer (101).

4. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The electron mobility distribution of the vortex topological charge modulation layer (106) has a function y=G+H*e x / lnx curve distribution; the electron mobility of the lower waveguide layer (102) is ≥ the electron mobility of the vortex topological charge modulation layer (106) is ≥ the electron mobility of the lower confinement layer (101).

5. A gallium nitride-based semiconductor laser chip according to any one of claims 1 to 4, characterized in that: The vortex topological charge modulation layer (106) has the following relationship: G≥C≥E≥A.

6. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The In / C element ratio distribution of the vortex topological charge modulation layer (106) has a function y=J+K*e x / lnx curve distribution; the In / C element ratio of the lower waveguide layer (102) ≥ the In / C element ratio of the vortex topological charge modulation layer (106) ≥ the In / C element ratio of the lower confinement layer (101).

7. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The In / H element ratio distribution of the vortex topological charge modulation layer (106) has a function y=L+M*e x / lnx curve distribution; the In / H element ratio of the lower waveguide layer (102) ≥ the In / H element ratio of the vortex topological charge modulation layer (106) ≥ the In / H element ratio of the lower confinement layer (101).

8. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The In / O element ratio distribution of the vortex topological charge modulation layer (106) has a function y=P+Q*e x / lnx curve distribution; the In / O element ratio of the lower waveguide layer (102) ≥ the In / O element ratio of the vortex topological charge modulation layer (106) ≥ the In / O element ratio of the lower confinement layer (101).

9. A gallium nitride-based semiconductor laser chip according to any one of claims 6 to 8, characterized in that: The In / C element ratio distribution, In / H element ratio distribution, and In / O element ratio distribution of the vortex topological charge modulation layer (106) have the following relationship: J≥P≥L.

10. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The vortex topological charge modulation layer (106) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

11. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN or any combination thereof, with a thickness of 10 to 80 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 120 angstroms.

12. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

13. The gallium nitride-based semiconductor laser chip according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

Images