Single crystal generation device for indium phosphide production

Abstract

The single crystal generation device comprises a heater, a discharging cover plate and a feeding cover plate are arranged at the two ends of the heater respectively, a groove is formed in the bottom of the heater and fixedly communicated with a mounting frame, rollers are evenly and rotationally arranged at the two ends of the inner wall of the mounting frame, and the rollers are arranged on the inner wall of the mounting frame. Pin shafts are installed on the outer wall of the heater and coaxially fixed to the roller, teeth are evenly arranged on the outer walls of the pin shafts, the multiple pin shafts are connected with the same transmission rack, a driving mechanism for driving the roller to rotate is installed at the bottom of the installation frame, and an air inlet pipe is arranged at the position, close to the discharging cover plate, of the top of the heater. An air outlet pipe is arranged at the position, close to the feeding cover plate, of the top of the heater. According to the device, indium phosphide generation raw materials can be heated and conveyed, convenient and smooth discharging after generation is facilitated, the device is safer and more convenient, and the efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of indium phosphide production equipment, and in particular to a single crystal generating device for indium phosphide production. Background Art

[0002] Indium phosphide is a composite semiconductor crystal that can be used in the processing and production of some electronic components. When indium phosphide is produced, it needs to be heated at high temperature in a quartz tube. The high temperature is used to cause the raw materials to melt and react with each other to produce indium phosphide crystal raw materials.

[0003] When the existing indium phosphide production generation device heats the indium phosphide raw material, the traditional heating method is to directly heat the quartz tube, and the temperature inside the heating chamber is controlled by directly increasing the temperature of the quartz tube to promote the generation of indium phosphide. The indium phosphide raw material is generally placed in a quartz boat, and then placed in a heating furnace in a static state. It is taken out after generation. There is a process of taking it out, which is generally taken out by tools, or taken out after closing the heating furnace and cooling it down. It needs to be careful and the operation is relatively troublesome and time-consuming. Summary of the invention

[0004] The purpose of the present invention is to solve the shortcomings of the prior art and to propose a single crystal production device for indium phosphide production.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions: A single crystal generating device for indium phosphide production comprises a heater, wherein a discharge cover plate and a feed cover plate are respectively arranged at two ends of the heater, a groove is provided at the bottom of the heater, the groove is fixedly connected to a mounting frame, rollers are evenly rotatably arranged at both ends of the inner wall of the mounting frame, a pin shaft is installed on the outer wall of the heater coaxially fixed with the roller, teeth are evenly provided on the outer wall of the pin shaft, a plurality of the pin shafts are connected to the same transmission rack, a driving mechanism for driving the roller to rotate is installed at the bottom of the mounting frame, an air inlet pipe is provided at the top of the heater near the discharge cover plate, and an air outlet pipe is provided at the top of the heater near the feed cover plate.

[0006] As a further solution of the present invention, the heater includes a mounting tube, and a heating wire is installed in the inner cavity of the mounting tube.

[0007] As a further solution of the present invention, the driving mechanism includes a driving motor installed at the bottom of the mounting frame, the output shaft of the driving motor and the pin shaft close to the feed cover plate are coaxially fixed with a transmission wheel, and the two transmission wheels are connected by a transmission belt.

[0008] As a further solution of the present invention, the top of the feed cover is rotatably arranged on the top of the inner wall of the heater, and a stopper is fixed on the mounting frame at the position of the feed cover.

[0009] As a further solution of the present invention, the bottom of the discharge cover plate is rotatably arranged in a mounting frame, a bidirectional motor is fixed to the outer wall of the mounting frame, and the bidirectional motor is coaxially fixed at the connection with the mounting frame.

[0010] As a further solution of the present invention, an infrared transmitter mounting seat is fixed to the outer wall of the transmission rack, an infrared transmitter is fixed to the inner wall of the infrared transmitter mounting seat, and a first infrared receiver and a second infrared receiver corresponding to the infrared transmitter are respectively arranged on both sides of the outer wall of the heater, and the first infrared receiver, the second infrared receiver, the infrared transmitter, the drive motor and the bidirectional motor are electrically connected to each other.

[0011] The beneficial effects of the present invention are: The present invention adopts a heater, a driving mechanism, a roller, a pin shaft, a transmission rack, an infrared transmitter, a first infrared receiver and a second infrared receiver. The driving motor drives the transmission wheel to work. Through the action of the transmission rack, all the pin shafts and the roller rotate, so that the indium phosphide raw material placed on the roller can move inside the heater, and is heated when it moves. When the indium phosphide raw material is transported close to the discharge cover plate, the infrared transmitter mounting seat drives the infrared transmitter to correspond to the first infrared receiver. The first infrared receiver receives an instruction to control the bidirectional motor to work. At this time, the bidirectional motor can drive the discharge cover plate to open. The technical effect has effectively solved the problems raised by the background technology, and then the indium phosphide raw material can be smoothly dropped and collected after being generated for the next step of operation. At the same time, there is a gap between the settings of the plurality of rollers, which will not affect the contact between the heat and the indium phosphide raw material.

[0012] The present invention adopts a technical means that an air pump can be connected to the air inlet pipe, air is injected through the air pump, and a feed cover plate is opened, thereby facilitating the blowing cleaning of the stopped heater and cleaning the waste residues and waste materials that may remain inside. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A schematic diagram of the three-dimensional structure of a single crystal generating device for indium phosphide production proposed by the present invention; Figure 2 This is a schematic diagram of a three-dimensional partially expanded structure of a single crystal production device for indium phosphide production proposed by the present invention; Figure 3 A single crystal production device for indium phosphide production proposed by the present invention Figure 2 The enlarged structural diagram at A in the middle; Figure 4 This is a partial three-dimensional enlarged structural schematic diagram of a single crystal production device for indium phosphide production proposed by the present invention; Figure 5 This is a schematic diagram of the connection structure between rollers of a single crystal generating device for indium phosphide production proposed by the present invention.

[0014] In the figure: 1. heater; 2. air inlet pipe; 3. air outlet pipe; 4. mounting frame; 5. driving mechanism; 6. discharge cover plate; 7. feed cover plate; 8. stopper; 9. driving motor; 10. transmission wheel; 11. transmission belt; 12. roller; 13. pin shaft; 14. transmission rack; 15. infrared transmitter mounting base; 16. first infrared receiver; 17. second infrared receiver; 18. bidirectional motor. DETAILED DESCRIPTION

[0015] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0016] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0017] Reference Figure 1-5 A single crystal generating device for indium phosphide production comprises a heater 1, a discharging cover plate 6 and a feeding cover plate 7 are respectively arranged at both ends of the heater 1, a groove is provided at the bottom of the heater 1, a mounting frame 4 is fixedly connected to the groove, rollers 12 are evenly rotated at both ends of the inner wall of the mounting frame 4, a pin shaft 13 is coaxially fixed with the roller 12 on the outer wall of the heater 1, teeth are evenly provided on the outer wall of the pin shaft 13, a plurality of pin shafts 13 are connected to the same transmission rack 14, and a driving mechanism 5 for driving the roller 12 to rotate is installed at the bottom of the mounting frame 4.

[0018] An air inlet pipe 2 is provided at the top of the heater 1 near the discharge cover 6, and an air outlet pipe 3 is provided at the top of the heater 1 near the feed cover 7. By adding the air inlet pipe 2 and the air outlet pipe 3, an air pump can be connected to the air inlet pipe 2, air is injected through the air pump, and the feed cover 7 is opened, so as to facilitate the blowing cleaning of the stopped heater 1 and clean the waste residues and waste materials that may remain inside.

[0019] In this embodiment, the heater 1 comprises a mounting tube, and a heating wire is installed in the inner cavity of the mounting tube.

[0020] In this embodiment, the driving mechanism 5 includes a driving motor 9 installed at the bottom of the mounting frame 4, and the output shaft of the driving motor 9 and the pin shaft 13 close to the feed cover plate 7 are coaxially fixed with a transmission wheel 10, and the two transmission wheels 10 are connected by a transmission belt 11. The top of the feed cover plate 7 is rotatably set on the top of the inner wall of the heater 1, and the mounting frame 4 is located at the position of the feed cover plate 7 with a stop block 8 fixed thereon.

[0021] In this embodiment, the bottom of the discharge cover plate 6 is rotatably arranged in the mounting frame 4 , and a bidirectional motor 18 is fixed to the outer wall of the mounting frame 4 . The connection between the bidirectional motor 18 and the mounting frame 4 is coaxially fixed.

[0022] In this embodiment, an infrared transmitter mounting base 15 is fixed to the outer wall of the transmission rack 14, an infrared transmitter is fixed to the inner wall of the infrared transmitter mounting base 15, and a first infrared receiver 16 and a second infrared receiver 17 corresponding to the infrared transmitter are respectively arranged on both sides of the outer wall of the heater 1, and the first infrared receiver 16, the second infrared receiver 17, the infrared transmitter, the drive motor 9 and the bidirectional motor 18 are electrically connected to each other.

[0023] Working principle: When in use, the drive motor 9 is started. When the drive motor 9 is working, the infrared emitter located on the infrared emitter mounting seat 15 is working, and the indium phosphide raw material is placed in the heater 1 through a tool, wherein the feed cover plate 7 can be turned inward, so that the indium phosphide raw material can easily enter the interior of the heater 1. The drive motor 9 drives the transmission wheel 10 to work, and under the action of the transmission belt 11, another transmission wheel 10 drives the pin shaft 13 to rotate, and through the action of the transmission rack 14, all the pin shafts 13 rotate synchronously, and the roller 12 located inside the mounting frame 4 rotates. , so that the indium phosphide raw material placed on the roller 12 can move inside the heater 1, and is heated when it moves. When the indium phosphide raw material is transported close to the discharge cover plate 6, the infrared transmitter mounting seat 15 drives the infrared transmitter to correspond to the first infrared receiver 16. The first infrared receiver 16 receives the instruction to control the bidirectional motor 18 to work. At this time, the bidirectional motor 18 can drive the discharge cover plate 6 to open, so that the indium phosphide raw material can fall smoothly after being generated and be collected for the next step of operation. At the same time, there are gaps between the settings of the rollers 12, which will not affect the contact between the heat and the indium phosphide raw material; Furthermore, by adding an air inlet pipe 2 and an air outlet pipe 3, an air pump can be connected to the air inlet pipe 2, air is pumped in through the air pump, and the feed cover 7 is opened to facilitate the blower cleaning of the stopped heater 1 and clean the waste residues and waste materials that may remain inside.

[0024] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0025] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0026] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0027] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A single crystal production device for indium phosphide production, comprising a heater (1), characterized in that: The two ends of the heater (1) are respectively provided with a discharge cover plate (6) and a feed cover plate (7); a groove is provided at the bottom of the heater (1); the groove is fixedly connected to a mounting frame (4); rollers (12) are evenly rotatably provided at both ends of the inner wall of the mounting frame (4); a pin shaft (13) is installed on the outer wall of the heater (1) and is coaxially fixed with the roller (12); teeth are evenly provided on the outer wall of the pin shaft (13); a plurality of the pin shafts (13) are connected to the same transmission rack (14); a driving mechanism (5) for driving the roller (12) to rotate is installed at the bottom of the mounting frame (4); an air inlet pipe (2) is provided at the top of the heater (1) near the discharge cover plate (6); and an air outlet pipe (3) is provided at the top of the heater (1) near the feed cover plate (7).

2. A single crystal production device for indium phosphide production according to claim 1, characterized in that: The heater (1) comprises a mounting tube, and a heating wire is mounted in the inner cavity of the mounting tube.

3. A single crystal production device for indium phosphide production according to claim 1, characterized in that: The driving mechanism (5) comprises a driving motor (9) mounted at the bottom of the mounting frame (4), the output shaft of the driving motor (9) and a pin shaft (13) close to the feed cover plate (7) are coaxially fixed with a transmission wheel (10), and the two transmission wheels (10) are connected by a transmission belt (11).

4. A single crystal production device for indium phosphide production according to claim 1, characterized in that: The top of the feed cover plate (7) is rotatably arranged on the top of the inner wall of the heater (1), and a stopper (8) is fixed on the mounting frame (4) at the position of the feed cover plate (7).

5. The single crystal production device for indium phosphide production according to claim 3, characterized in that: The bottom of the discharge cover plate (6) is rotatably arranged in the mounting frame (4), a bidirectional motor (18) is fixed to the outer wall of the mounting frame (4), and the connection between the bidirectional motor (18) and the mounting frame (4) is coaxially fixed.

6. A single crystal production device for indium phosphide production according to claim 5, characterized in that: An infrared transmitter mounting seat (15) is fixed to the outer wall of the transmission rack (14), an infrared transmitter is fixed to the inner wall of the infrared transmitter mounting seat (15), and a first infrared receiver (16) and a second infrared receiver (17) corresponding to the infrared transmitter are respectively arranged on both sides of the outer wall of the heater (1), and the first infrared receiver (16), the second infrared receiver (17), the infrared transmitter, the driving motor (9) and the bidirectional motor (18) are electrically connected to each other.

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