Thermal management system of semiconductor processing workshop
By designing a thermal management system in the semiconductor processing workshop, using the heat exchange effect between exhaust gas and fluids, high-temperature fluids are generated for reactor preheating, solving the problems of waste of exhaust gas and high treatment costs, and achieving heat recovery and energy consumption reduction .
Patent Information
- Application Number
- CN202411874501.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-18
- Publication Date
- 2025-02-14
AI Technical Summary
In semiconductor processing workshops, exhaust heat is difficult to effectively utilize, resulting in waste of heat and high treatment costs.
A heat management system is designed, including a exhaust gas emission module, a first heat exchange module and a fluid supply module, and heat exchange is performed in the first heat exchange module through the exhaust gas and the fluid, to generate high-temperature fluid and use it for reactor preheating.
The recovery of exhaust gas heat is achieved, reducing heat waste, reducing exhaust gas treatment costs, and saving other heat used for reactor preheating, reducing energy consumption.
Smart Images
Figure CN119436934A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor processing, and in particular to a thermal management system for a semiconductor processing workshop. Background Art
[0002] Semiconductor processing workshops, such as coating workshops, are usually equipped with one or more reactors. The reactors and the vehicles entering and exiting the reactors will continuously dissipate heat into the air, resulting in a relatively high temperature in the workshop. At present, semiconductor processing workshops are generally equipped with exhaust systems, which are equipped with exhaust vents and exhaust fans on the walls of the workshop to exhaust the high-temperature gas in the workshop, thereby controlling the temperature in the workshop. Summary of the invention
[0003] The purpose of the present invention is to provide a thermal management system for a semiconductor processing workshop, which can utilize the heat of exhaust gas to preheat the reactor, thereby reducing the waste of exhaust gas heat and facilitating the subsequent treatment of the exhaust gas.
[0004] To solve the above technical problems, the present invention provides a thermal management system for a semiconductor processing workshop, comprising an exhaust gas emission module, a first heat exchange module and a fluid supply module, the exhaust gas emission module comprising a tail exhaust pipe, the fluid supply module comprising a fluid supply pipe, the fluid supply pipe being at least used to be connected to a reactor in the semiconductor processing workshop, the tail exhaust pipe and the fluid supply pipe being both connected to the first heat exchange module to perform heat exchange through the first heat exchange module.
[0005] In the above scheme, the thermal management system also includes a fluid supply module and a first heat exchange module. The fluid provided by the fluid supply module can exchange heat with the tail gas of the tail gas emission module in the first heat exchange module, so that the fluid can have a relatively high temperature. The fluid is introduced into the reactor to achieve preheating of the reaction chamber in the reactor. In this way, on the one hand, the heat of the tail gas can be fully recovered to reduce the waste of the heat of the tail gas, and the subsequent treatment of the tail gas can be convenient, which can reduce the cost of tail gas treatment; on the other hand, it can save or even eliminate other heat (such as vacuum radiation heating) that is originally required to preheat the reactor, and can also reduce energy consumption to reduce the cost of semiconductor processing.
[0006] Optionally, a plurality of the reactors are arranged in the semiconductor processing workshop, and the fluid supply pipeline is provided with a plurality of first supply outlets, the number of the first supply outlets is consistent with the number of the reactors, and each of the first supply outlets is connected to each of the reactors one by one.
[0007] Optionally, the fluid supply pipeline is used to supply preheating gas or preheating liquid, and the preheating gas is used to fill the reactor.
[0008] Optionally, a second heat exchange module is further included; in the flow direction of the fluid in the fluid supply pipeline, the second heat exchange module is located downstream of the first heat exchange module, and the second heat exchange module is also used to exchange heat for the fluid in the fluid supply pipeline.
[0009] Optionally, it also includes a first temperature detection component and a second temperature detection component, and the first temperature detection component and the second temperature detection component are both connected to the fluid supply pipeline and are used to detect the temperature of the fluid in the fluid supply pipeline; in the flow direction of the fluid in the fluid supply pipeline, the first temperature detection component is located upstream of the second heat exchange module, and the second temperature detection component is located downstream of the second heat exchange module.
[0010] Optionally, a third heat exchange module is further included, and the third heat exchange module is installed in the reactor to perform heat exchange on the interior of the reactor.
[0011] Optionally, the third heat exchange module is a vacuum radiation heat exchange component.
[0012] Optionally, the semiconductor processing workshop includes a process chamber and a buffer chamber, the reactor is arranged in the process chamber, a buffer rack is arranged in the buffer chamber, the buffer rack includes a first stand and a second stand, the first stand is located on the upper side of the second stand, the first stand is used to hold the carrier to enter the reactor, and the second stand is used to hold the carrier leaving the reactor.
[0013] Optionally, the fluid supply pipeline is further configured with a second supply outlet, and the second supply outlet is used to supply fluid to the first stand.
[0014] Optionally, the semiconductor processing workshop includes a wall, and at least one of the exhaust gas emission module and the first heat exchange module is arranged in the wall. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] Figure 1 This is a simplified structural diagram of a semiconductor processing workshop;
[0016] Figure 2 for Figure 1 A schematic diagram of the internal structure of the middle process chamber;
[0017] Figure 3 for Figure 1 A schematic diagram of the internal structure of the middle buffer chamber;
[0018] Figure 4 This is a simplified structural diagram of a thermal management system for a semiconductor processing workshop provided by an embodiment of the present invention.
[0019] Reference numerals:
[0020] 100-semiconductor processing workshop; 110-processing chamber; 120-buffer chamber; 130-wall; 140-reactor; 150-buffer rack; 151-first rack; 152-second rack;
[0021] 200-exhaust emission module; 210-exhaust pipe; 220-exhaust fan;
[0022] 300-first heat exchange module;
[0023] 400 - fluid supply module; 410 - fluid supply pipeline; 411 - first supply outlet; 420 - first temperature detection component; 430 - second temperature detection component;
[0024] 500- second heat exchange module;
[0025] 600-the third heat exchange module. DETAILED DESCRIPTION
[0026] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0027] In the description of the embodiments of the present invention, the terms "first", "second", and "third" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", and "third" may explicitly or implicitly include one or more of the features.
[0028] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.
[0029] In the description of the embodiments of the present invention, the term "plurality" refers to two or more than two. Moreover, when "plurality" is used to express the number of different components, it does not indicate the relationship between these components in terms of quantity.
[0030] In the description of the embodiments of the present invention, the terms "comprises", "includes" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.
[0031] Please refer to Figure 1-Figure 4 , Figure 1 This is a simplified structural diagram of a semiconductor processing workshop; Figure 2 for Figure 1 A schematic diagram of the internal structure of the middle process chamber; Figure 3 for Figure 1 A schematic diagram of the internal structure of the middle buffer chamber; Figure 4 This is a simplified structural diagram of a thermal management system for a semiconductor processing workshop provided by an embodiment of the present invention.
[0032] like Figure 1-Figure 3 As shown, the semiconductor processing workshop 100 may include multiple walls 130, and the walls 130 may be connected to each other to enclose and form the external structure of the semiconductor processing workshop 100. The interior of the semiconductor processing workshop 100 may include a process chamber 110 and a buffer chamber 120.
[0033] A reactor 140 is disposed in the process chamber 110. The reactor 140 may be a tubular structure, etc., and a reaction chamber is formed inside the reactor 140, and the reaction chamber is used to provide a reaction place for processing substrates such as silicon wafers. The specific process type in the reaction chamber may be an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, a plasma enhanced atomic layer deposition (PEALD) process, etc., which are not limited here.
[0034] In specific use, a carrier may also be configured, and the carrier may be, for example, a graphite boat, a quartz boat, etc., and a boat sheet may be provided on the carrier to carry and fix the substrate, and the substrate can enter and exit the reaction chamber together with the carrier to facilitate batch processing of the substrate. In some implementations, a reaction chamber may only accommodate one carrier. In other implementations, a reaction chamber may also accommodate multiple carriers, such as two carriers, at the same time, so that the production efficiency of deposition film formation can be improved.
[0035] The buffer chamber 120 may be adjacent to the process chamber 110 . A buffer rack 150 may be disposed in the buffer chamber 120 . The buffer rack 150 is used to hold carriers, including carriers to enter the reaction chamber and carriers to leave the reaction chamber.
[0036] The buffer chamber 120 and the process chamber 110 are not isolated from each other to facilitate the transfer of the carrier between the reaction chamber and the buffer rack 150 .
[0037] As described in the background technology section, in actual production, the reactor 140 and the carriers entering and exiting the reactor 140 will continuously dissipate heat into the air, resulting in relatively high temperatures in the process chamber 110 and the buffer chamber 120. At present, semiconductor processing workshops are generally equipped with exhaust systems, which can directly discharge the high-temperature gas in the workshop as exhaust gas to control the temperature in the workshop. However, this treatment method will lead to a waste of heat, and at the same time, it will also increase the difficulty of exhaust gas treatment, resulting in a high cost of exhaust gas treatment.
[0038] To address this, an embodiment of the present invention provides a thermal management system for a semiconductor processing workshop 100, which can be specifically combined with Figure 4 The thermal management system includes an exhaust emission module 200 , a first heat exchange module 300 and a fluid supply module 400 .
[0039] The tail gas emission module 200 includes a tail gas exhaust pipe 210 for extracting the high temperature gas in the semiconductor processing workshop 100 as tail gas. The flow direction of the tail gas can be roughly referred to as Figure 1-Figure 3 As shown by the hollow arrow in . In specific practice, the exhaust gas emission module 200 may further include a tail exhaust fan 220, which may be connected to the tail exhaust pipe 210 to provide power for exhausting the exhaust gas. The number of the tail exhaust fan 220 may be one, or the number of the tail exhaust fan 220 may be multiple, which is specifically related to the size of the semiconductor processing workshop 100, etc., and is not clearly limited in the embodiments of the present invention.
[0040] The fluid supply module 400 includes a fluid source (not shown) and a fluid supply pipeline 410. The fluid source can be connected to the fluid supply pipeline 410 to provide fluid to the fluid supply pipeline 410. The tail pipe 210 and the fluid supply pipeline 410 are both connected to the first heat exchange module 300 to perform heat exchange through the first heat exchange module 300, so that the heat in the tail gas can be used to heat the fluid provided by the fluid supply pipeline 410.
[0041] The fluid supply pipe 410 is at least used to connect to the reactor 140 in the semiconductor processing workshop 100, so as to at least supply the fluid to the reactor 140. The flow direction of the fluid can refer to Figure 1-Figure 3 As shown by the solid arrow in . Since the fluid has exchanged heat with the tail gas in the first heat exchange module 300, the fluid can have a relatively high temperature. The fluid is passed into the reactor 140 to preheat the reaction chamber in the reactor 140. In this way, on the one hand, the heat of the tail gas can be fully recovered to reduce the waste of the heat of the tail gas, and the subsequent treatment of the tail gas can be convenient, which can reduce the cost of tail gas treatment; on the other hand, it can save or even eliminate other heat (such as vacuum radiation heating) that is originally required to preheat the reactor 140, and can also reduce energy consumption to reduce the cost of semiconductor processing.
[0042] Here, the embodiment of the present invention does not limit the type of fluid provided by the fluid supply pipeline 410. In practical applications, those skilled in the art can make a selection according to specific needs, as long as it can meet the requirements of use.
[0043] In some implementations, the fluid provided by the fluid supply pipeline 410 may be a preheating gas. The preheating gas may be directly introduced into the reaction chamber as a heat transfer medium. In this way, the reaction chamber may be preheated more quickly, the preheating time may be greatly shortened, and the preheating efficiency may be improved. At the same time, it is also beneficial to achieve uniform preheating of various regions inside the reaction chamber, which is beneficial to improving the uniformity of the process.
[0044] The preheating gas may be nitrogen or an inert gas, etc. Taking nitrogen as an example, after passing through the first heat exchange module 300, the temperature of the nitrogen can be raised to between 80°C and 100°C. When the nitrogen is introduced into the reaction chamber for preheating, the preheating time can be shortened by about 30s to 60s compared to the traditional vacuum radiation preheating process, thereby shortening the semiconductor processing time and improving the semiconductor processing efficiency.
[0045] In other implementations, the fluid provided by the fluid supply pipeline 410 may also be a preheating liquid, and the preheating liquid may be, for example, water. In this case, a preheating pipeline may be provided on the shell wall of the reactor 140, and the fluid supply pipeline 410 may be connected to the preheating pipeline so that the preheating liquid is passed into the preheating pipeline, so that indirect heating of the reaction chamber in the reactor 140 can be achieved. The specific structural form and arrangement position of the preheating pipeline are not limited herein.
[0046] In addition, the embodiment of the present invention does not limit the specific structural form of the first heat exchange module 300. In practical applications, those skilled in the art can determine it according to the type of fluid supplied by the fluid supply pipeline 410. For example, when the fluid provided by the fluid supply pipeline 410 is preheating gas, the first heat exchange module 300 can be a gas-liquid heat exchanger such as a plate heat exchanger, a shell and tube heat exchanger, or a spiral plate heat exchanger. For another example, when the fluid provided by the fluid supply pipeline 410 is a preheating liquid, the first heat exchange module 300 can be a liquid-liquid heat exchanger such as a partition heat exchanger, a fluid-connected indirect heat exchanger, etc.
[0047] In the process chamber 110 , the number of the reactor 140 may be one. In this case, the fluid supply pipeline 410 may be configured with a first supply outlet 411 , and the first supply outlet 411 may be connected to the reactor 140 to supply the fluid to the reactor 140 .
[0048] Or, if Figure 1 and Figure 2 As shown, in the process chamber 110, there may be a plurality of reactors 140. In this case, the fluid supply pipeline 410 may be configured with a plurality of first supply outlets 411, the number of the first supply outlets 411 and the number of the reactors 140 may be consistent, and each first supply outlet 411 may be connected to each reactor 140 one by one, so as to supply fluid to each reactor 140 one by one.
[0049] In some optional implementations, the thermal management system provided by the embodiments of the present invention may further include a second heat exchange module 500 .
[0050] In the flow direction of the fluid in the fluid supply pipeline 410, the second heat exchange module 500 can be located downstream of the first heat exchange module 300, that is, the fluid can flow from the first heat exchange module 300 to the second heat exchange module 500. The second heat exchange module 500 is also used to perform heat exchange on the fluid in the fluid supply pipeline 410 to control the temperature of the fluid, so that the temperature of the fluid can better meet the preheating standard of the reaction chamber.
[0051] The thermal management system may further include a first temperature detection component 420 and a second temperature detection component 430. The first temperature detection component 420 and the second temperature detection component 430 may be, for example, temperature measuring elements such as a thermal resistor sensor and a thermocouple sensor. The first temperature detection component 420 and the second temperature detection component 430 may both be connected to the fluid supply pipeline 410 to detect the temperature of the fluid in the fluid supply pipeline 410.
[0052] Combination Figure 4 In the flow direction of the fluid in the fluid supply pipe 410, the first temperature detection component 420 can be located upstream of the second heat exchange module 500, and the second temperature detection component 430 can be located downstream of the second heat exchange module 500, that is, the fluid can flow from the first temperature detection component 420 to the second heat exchange module 500, and then flow to the second temperature detection component 430.
[0053] For ease of description, the temperature value measured by the first temperature detection component 420 may be defined as T1, where T1 represents the temperature value of the fluid after heat exchange with the tail gas in the first heat exchange module 300. Also, the temperature value measured by the second temperature detection component 430 may be defined as T2, where T2 represents the temperature value of the fluid after heat exchange in the second heat exchange module 500. At the same time, the preheating temperature set in the reaction chamber of the reactor 140 is defined as T0.
[0054] In specific practice, T1 and T0 can be compared first. If the difference between T1 and T0 exceeds the set threshold, it means that the fluid cannot meet the preheating requirements for the reaction chamber only through the heat exchange of the first heat exchange module 300. At this time, the second heat exchange module 500 can be started to further exchange heat with the fluid to control the temperature of the fluid so that the difference between T2 and T0 can be within the set threshold range. Of course, if the difference between T1 and T0 itself is within the aforementioned set threshold range, the second heat exchange module 500 may not be started; that is, the second heat exchange module 500 may not be a normally open component to save energy.
[0055] Here, the embodiment of the present invention does not limit the specific range of the above-mentioned set threshold value. In practical applications, those skilled in the art can select it according to specific needs, as long as it can meet the requirements of use.
[0056] In addition, the embodiment of the present invention does not limit the specific type of the second heat exchange module 500. In practical applications, those skilled in the art can also make a selection according to specific needs, as long as it can meet the requirements of use. For example, when T1 is usually less than T0, the second heat exchange module 500 can be a heating module, such as an electric heating component, a vacuum radiation heating component, etc., for secondary heating of the fluid. For another example, when T1 is usually greater than T0, the second heat exchange module 500 can also be a cooling module, such as a liquid heat exchange component, etc., for cooling the fluid. It should be understood that the liquid heat exchange component can actually be used for heating, which is specifically related to the temperature of the liquid medium introduced into the liquid heat exchange component; that is, when a liquid heat exchange component is used, it can be adapted to both the situation where T1 is less than T0 and the situation where T1 is greater than T0, and the scope of application can be wider.
[0057] In some optional implementations, the thermal management system provided by the embodiment of the present invention may further include a third heat exchange module 600 .
[0058] The third heat exchange module 600 can be installed in the reactor 140 to perform heat exchange on the inside of the reactor 140 so as to more quickly and accurately control the temperature in the reaction chamber. For example, in the reaction chamber preheating stage, the third heat exchange module 600 can cooperate with the fluid provided by the fluid supply pipeline 410 to more quickly preheat the inside of the reaction chamber. For another example, in actual production, the third heat exchange module 600 can also adjust the temperature in the reaction chamber according to the specific process, etc., to better meet the requirements of process implementation.
[0059] Here, the embodiment of the present invention does not limit the specific type of the third heat exchange module 600. In practical applications, those skilled in the art can also select according to specific needs, as long as it can meet the requirements of use. For example, the third heat exchange module 600 can be a vacuum radiation heat exchange component, an electric heating component, etc.
[0060] In some optional implementations, the buffer rack 150 in the buffer chamber 120 may include a first stand 151 and a second stand 152 , wherein the first stand 151 may be located on an upper side of the second stand 152 .
[0061] In practical applications, the first rack 151 can be used to hold carriers to enter the reactor 140, that is, cold carriers, hereinafter referred to as first carriers; and the second rack 152 can be used to hold carriers leaving the reactor 140, that is, hot carriers, hereinafter referred to as second carriers. Figure 3The airflow in the buffer chamber 120 usually flows upward. When passing through the second carrier, the airflow can be heated to form a hot airflow. While continuing to flow upward, the hot airflow can preheat the first carrier. In this way, the temperature of the first carrier can be increased. After the first carrier enters the reaction chamber, the temperature disturbance in the reaction chamber is relatively small, and the first carrier can enter the production state more quickly, which is beneficial to improving production efficiency.
[0062] The first stand 151 and the second stand 152 may each include only one stand body, or may each include multiple stands, which is not limited here.
[0063] In some optional implementations, the fluid in the fluid supply pipe 410 can also be supplied to the first stand 151 to preheat the first stand 151 and the first carrier located on the first stand 151. In this way, there can be two preheating methods for the first carrier, namely, the fluid preheating here and the hot air flow preheating mentioned above, which can have a better preheating effect on the first carrier and is more conducive to ensuring the preheating temperature of the first carrier.
[0064] In practical applications, the preheating temperature of the first carrier may be between 70° C. and 80° C. By preheating the first carrier, the energy consumption of the reactor 140 may be reduced (about 1.2 KW), and the process preheating time may be further shortened by about 30s to 60s.
[0065] When the fluid supplied by the fluid supply pipeline 410 is preheating gas, the fluid can be directly blown to preheat the first stand 151 and the first carrier located on the first stand 151, that is, a second supply outlet (not shown in the figure) can be provided in the fluid supply pipeline 410, and the second supply outlet can be provided toward the first stand 151, so that the preheating gas leaving the second supply outlet can directly heat the first stand 151 and the first carrier. Of course, a dedicated blowing pipeline can also be provided to guide the preheating gas to a position closer to the first carrier, so as to better achieve heating of the first carrier.
[0066] When the fluid supplied by the fluid supply pipeline 410 is preheating liquid, a dedicated preheating pipeline needs to be configured to guide the preheating liquid to the first platform 151 , so as to indirectly heat the first carrier by heating the first platform 151 .
[0067] In some optional implementations, in the thermal management system provided by the embodiments of the present invention, at least one of the exhaust emission module 200 and the first heat exchange module 300 can be set in the wall 130 so as to make full use of the wall 130 for installation, thereby reducing the occupation of the internal space of the semiconductor processing workshop.
[0068] As for the fluid supply module 400, it can be partially located in the wall 130, or it can be located entirely inside the semiconductor processing workshop. As for the second heat exchange module 500, it can be located in the wall 130, or it can be located entirely inside the semiconductor processing workshop.
[0069] The above are only preferred embodiments of the present invention. It should be pointed out that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.
Claims
1. A thermal management system for a semiconductor processing workshop, characterized in that: It includes a tail gas emission module, a first heat exchange module and a fluid supply module, the tail gas emission module includes a tail gas exhaust pipe, the fluid supply module includes a fluid supply pipe, the fluid supply pipe is at least used to be connected to the reactor in the semiconductor processing workshop, the tail gas exhaust pipe and the fluid supply pipe are both connected to the first heat exchange module to perform heat exchange through the first heat exchange module.
2. The thermal management system for a semiconductor processing workshop according to claim 1, characterized in that: A plurality of the reactors are arranged in the semiconductor processing workshop, and the fluid supply pipeline is provided with a plurality of first supply outlets. The number of the first supply outlets is consistent with the number of the reactors, and each of the first supply outlets is connected to each of the reactors one by one.
3. The thermal management system of a semiconductor processing workshop according to claim 1, characterized in that: The fluid supply pipeline is used for supplying preheating gas or preheating liquid, and the preheating gas is used for filling into the reactor.
4. The thermal management system for a semiconductor processing workshop according to any one of claims 1 to 3, characterized in that: Also includes a second heat exchange module; In the flow direction of the fluid in the fluid supply pipeline, the second heat exchange module is located downstream of the first heat exchange module, and the second heat exchange module is also used to exchange heat with the fluid in the fluid supply pipeline.
5. The thermal management system for a semiconductor processing workshop according to claim 4, characterized in that: It also includes a first temperature detection component and a second temperature detection component, wherein the first temperature detection component and the second temperature detection component are both connected to the fluid supply pipeline and are used to detect the temperature of the fluid in the fluid supply pipeline; In the flow direction of the fluid in the fluid supply pipeline, the first temperature detection component is located upstream of the second heat exchange module, and the second temperature detection component is located downstream of the second heat exchange module.
6. The thermal management system for a semiconductor processing workshop according to any one of claims 1 to 3, characterized in that: The invention also comprises a third heat exchange module, wherein the third heat exchange module is installed in the reactor to perform heat exchange on the interior of the reactor.
7. The thermal management system for a semiconductor processing workshop according to claim 6, characterized in that: The third heat exchange module is a vacuum radiation heat exchange component.
8. The thermal management system for a semiconductor processing workshop according to any one of claims 1 to 3, characterized in that: The semiconductor processing workshop includes a process chamber and a buffer chamber. The reactor is arranged in the process chamber. A buffer rack is arranged in the buffer chamber. The buffer rack includes a first stand and a second stand. The first stand is located on the upper side of the second stand. The first stand is used to hold a carrier to enter the reactor, and the second stand is used to hold a carrier leaving the reactor.
9. The thermal management system for a semiconductor processing workshop according to claim 8, characterized in that: The fluid supply pipeline is further configured with a second supply outlet, and the second supply outlet is used to supply fluid to the first stand.
10. The thermal management system for a semiconductor processing workshop according to any one of claims 1 to 3, characterized in that: The semiconductor processing workshop includes a wall, and at least one of the exhaust gas emission module and the first heat exchange module is arranged in the wall.